Nova Patents
ATE521985T1

A semiconductor device with a high-k gate dielectric and a metal gate electrode

Abstract

A semiconductor device is described that comprises a gate dielectric and a metal gate electrode that comprises an aluminide.

Term

Term ended

Projected expiry passed 8 July 2025, 1.2 years ago.

  1. Priority
  2. Filed
  3. Published
  4. Projected expiry
  5. Today

16 members in 8 offices

This recordMember, by publication datePriority claim

Priority claims2

Priority claims
DocumentOfficeKindDate
89612404United States of AmericaA
2005024489United States of AmericaW

Members16

Family members, oldest first
DocumentOfficeKind
US2006017098A1United States of AmericaA1
WO2006019675A1World Intellectual Property Organization (WIPO)A1
TW200625631ATaiwan Province of ChinaA
US7148548B2United States of AmericaB2
KR20070020140ARepublic of KoreaA
EP1790006A1European Patent Office (EPO)A1
CN101036225AChinaA
JP2008507149AJapanA
KR100852387B1Republic of KoreaB1
TWI304265BTaiwan Province of ChinaB
EP1790006B1European Patent Office (EPO)B1
AT521985TAustriaT
ATE521985T1This recordAustriaT1
JP2012109598AJapanA
JP4959561B2JapanB2
CN102867850AChinaA