AT521985T
A semiconductor device with a high-k gate dielectric and a metal gate electrode
Abstract
A semiconductor device including a metal gate electrode and a gate dielectric containing aluminide (aluminide) is described.High-k gate dielectric, the metal gate electrode and an aluminide, a leakage current, the gate dielectric
Term
Term ended
Expired 8 July 2025, 1.2 years ago.
- Priority
- Filed
- Granted
- Expired
- Today
16 members in 8 offices
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 89612404 | United States of America | A | |
| 2005024489 | United States of America | W |
Members16
| Document | Office | Kind | |
|---|---|---|---|
| US2006017098A1 | United States of America | A1 | |
| WO2006019675A1 | World Intellectual Property Organization (WIPO) | A1 | |
| TW200625631A | Taiwan Province of China | A | |
| US7148548B2 | United States of America | B2 | |
| KR20070020140A | Republic of Korea | A | |
| EP1790006A1 | European Patent Office (EPO) | A1 | |
| CN101036225A | China | A | |
| JP2008507149A | Japan | A | |
| KR100852387B1 | Republic of Korea | B1 | |
| TWI304265B | Taiwan Province of China | B | |
| EP1790006B1 | European Patent Office (EPO) | B1 | |
| AT521985TThis record | Austria | T | |
| ATE521985T1 | Austria | T1 | |
| JP2012109598A | Japan | A | |
| JP4959561B2 | Japan | B2 | |
| CN102867850A | China | A |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 5770566
Titles2
- German
- HALBLEITERBAUELEMENT MIT EINEM GATE-DIELEKTRIKUM MIT HOHEM K UND METALL-GATE-ELEKTRODE
- English
- SEMICONDUCTOR ELEMENT WITH A GATE DIELECTRIC WITH HIGH K AND METAL GATE ELECTRODE
Classification
- CPC, 6
- H01L21/28194
- H01L21/823842
- H01L29/4966
- H01L29/517
- H01L29/518
- H01L29/66545
- IPC, 2
- H01L21 28
- H01L21 8238