ATE445230T1

Method of planarizing the upper surface of a semiconductor wafer

Abstract

This invention pertains to a method of modifying or refining the surface of a wafer suited for semiconductor fabrication. This method may be used to modify a wafer having an unmodified, exposed surface comprised of a layer of second material deployed over at least one discrete feature of a first material attached to the wafer. A first step of this method comprises contacting and relatively moving the exposed surface of the wafer with respect to an abrasive article, wherein the abrasive article comprises an exposed surface of a plurality of three-dimensional abrasive composite comprising a plurality of abrasive particles fixed and dispersed in a binder and maintaining contact to effect removal of the second material. In a second step, the contact and relative motion are continued until an exposed surface of the wafer has at least one area of exposed first material and at least one area of exposed second material.

Term

Term ended

Projected expiry passed 30 April 2018, 8.4 years ago.

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36 members in 13 offices

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Priority claims
DocumentOfficeKindDate
84672697United States of AmericaA
9808693United States of AmericaW

Members36

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CA2287404A1CanadaA1
WO9849723A1World Intellectual Property Organization (WIPO)A1
AU7170698AAustraliaA
CN1254441AChinaA
BR9809311ABrazilA
BR9809311ABrazilA
EP1016133A1European Patent Office (EPO)A1
US6194317B1United States of AmericaB1
KR20010020384ARepublic of KoreaA
AU734883B2AustraliaB2
JP2001523395AJapanA
TW479285BTaiwan Province of ChinaB
CN1165975CChinaC
KR100571892B1Republic of KoreaB1
MY125856AMalaysiaA
CA2287404CCanadaC
US2008026583A1United States of AmericaA1
WO2009023387A2World Intellectual Property Organization (WIPO)A2
WO2009023387A3World Intellectual Property Organization (WIPO)A3
TW200918654ATaiwan Province of ChinaA
EP1016133B1European Patent Office (EPO)B1
AT445230TAustriaT
ATE445230T1This recordAustriaT1
DE69841220D1GermanyD1
EP2186121A2European Patent Office (EPO)A2
KR20100065328ARepublic of KoreaA
CN101779274AChinaA
JP2010537404AJapanA
EP2186121A4European Patent Office (EPO)A4
US8092707B2United States of AmericaB2
US2012094487A1United States of AmericaA1
CN101779274BChinaB
JP5513384B2JapanB2
TWI460261BTaiwan Province of ChinaB
KR101494034B1Republic of KoreaB1
EP2186121B1European Patent Office (EPO)B1