Method of planarizing the upper surface of a semiconductor wafer
Abstract
This invention pertains to a method of modifying or refining the surface of a wafer suited for semiconductor fabrication. This method may be used to modify a wafer having an unmodified, exposed surface comprised of a layer of second material deployed over at least one discrete feature of a first material attached to the wafer. A first step of this method comprises contacting and relatively moving the exposed surface of the wafer with respect to an abrasive article, wherein the abrasive article comprises an exposed surface of a plurality of three-dimensional abrasive composite comprising a plurality of abrasive particles fixed and dispersed in a binder and maintaining contact to effect removal of the second material. In a second step, the contact and relative motion are continued until an exposed surface of the wafer has at least one area of exposed first material and at least one area of exposed second material.
Term
Term ended
Projected expiry passed 30 April 2018, 8.4 years ago.
- Priority
- Filed
- Published
- Projected expiry
- Today
36 members in 13 offices
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 84672697 | United States of America | A | |
| 9808693 | United States of America | W |
Members36
| Document | Office | Kind | |
|---|---|---|---|
| CA2287404A1 | Canada | A1 | |
| WO9849723A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU7170698A | Australia | A | |
| CN1254441A | China | A | |
| BR9809311A | Brazil | A | |
| BR9809311A | Brazil | A | |
| EP1016133A1 | European Patent Office (EPO) | A1 | |
| US6194317B1 | United States of America | B1 | |
| KR20010020384A | Republic of Korea | A | |
| AU734883B2 | Australia | B2 | |
| JP2001523395A | Japan | A | |
| TW479285B | Taiwan Province of China | B | |
| CN1165975C | China | C | |
| KR100571892B1 | Republic of Korea | B1 | |
| MY125856A | Malaysia | A | |
| CA2287404C | Canada | C | |
| US2008026583A1 | United States of America | A1 | |
| WO2009023387A2 | World Intellectual Property Organization (WIPO) | A2 | |
| WO2009023387A3 | World Intellectual Property Organization (WIPO) | A3 | |
| TW200918654A | Taiwan Province of China | A | |
| EP1016133B1 | European Patent Office (EPO) | B1 | |
| AT445230T | Austria | T | |
| ATE445230T1This record | Austria | T1 | |
| DE69841220D1 | Germany | D1 | |
| EP2186121A2 | European Patent Office (EPO) | A2 | |
| KR20100065328A | Republic of Korea | A | |
| CN101779274A | China | A | |
| JP2010537404A | Japan | A | |
| EP2186121A4 | European Patent Office (EPO) | A4 | |
| US8092707B2 | United States of America | B2 | |
| US2012094487A1 | United States of America | A1 | |
| CN101779274B | China | B | |
| JP5513384B2 | Japan | B2 | |
| TWI460261B | Taiwan Province of China | B | |
| KR101494034B1 | Republic of Korea | B1 | |
| EP2186121B1 | European Patent Office (EPO) | B1 |
Numbers
- Application
- 98918864
Titles2
- English
- METHOD FOR PLANARIZING THE SURFACE OF A SEMICONDUCTOR WAFER
- German
- VERFAHREN ZUM PLANARISIEREN DER OBERFLÄCHE EINES HALBLEITERWAFERS
Classification
- CPC, 7
- B24B37/22
- H10P52/00
- B24B37/245
- B24D11/00
- H10P95/062
- H10P52/403
- H10W20/092
- IPC, 7
- B24B37 22
- B24B37 24
- B24D11 00
- H01L21 304
- H01L21 3105
- H01L21 321
- H01L21 768