ATE433216T1 - METHOD FOR FABRICATING LATERAL SEMICONDUCTOR DEVICE

26 members in 15 offices

This recordMember, by publication datePriority claim5 more offices are in the list below

Priority claims
Document	Office	Kind	Date
0417738	United Kingdom	A	2004-08-09
2005003021	United Kingdom	W	2005-08-02

Family members, oldest first
Document	Office	Kind
GB0417738D0	United Kingdom	D0	2004-09-08
GB0515863D0	United Kingdom	D0	2005-09-07
GB2417126A	United Kingdom	A	2006-02-15
GB2417133A	United Kingdom	A	2006-02-15
CA2574591A1	Canada	A1	2006-02-16
WO2006016118A1	World Intellectual Property Organization (WIPO)	A1	2006-02-16
TW200625742A	Taiwan Province of China	A	2006-07-16
GB2417133B	United Kingdom	B	2006-08-23
KR20070041780A	Republic of Korea	A	2007-04-19
EP1776743A1	European Patent Office (EPO)	A1	2007-04-25
NO20070626L	Norway	L	2007-05-09
CN101002370A	China	A	2007-07-18
JP2008509570A	Japan	A	2008-03-27
HK1107727A	Hong Kong, China	A	2008-04-11
HK1107727A1	Hong Kong, China	A1	2008-04-11
US2008087876A1	United States of America	A1	2008-04-17
MY136199A	Malaysia	A	2008-08-29
EP1776743B1	European Patent Office (EPO)	B1	2009-06-03
AT433216T	Austria	T	2009-06-15
ATE433216T1This record	Austria	T1	2009-06-15
CN100511884C	China	C	2009-07-08
DE602005014781D1	Germany	D1	2009-07-16
US7589347B2	United States of America	B2	2009-09-15
ES2328162T3	Spain	T3	2009-11-10
JP4794558B2	Japan	B2	2011-10-19
TWI397228B	Taiwan Province of China	B	2013-05-21

1 legal event, as the office reported them to INPADOC

Legal events, newest first
	Event	Code
2009-12-15	Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER	RER

CPC, 8: H10H20/81
H10D62/117
H10D10/80
H01S5/0424
H10H20/819
H01S5/22
H10W10/031
H10W10/30
Filled: the office’s first classification
IPC, 3: H01L33 02
H01L33 20
H01S5 042

Method for fabricating lateral semiconductor device