Method for fabricating lateral semiconductor device

A transverse junction semiconductor device and manufacturing method thereof, wherein the method comprises the steps: Formed with an overlapping semiconductor structure (2), which are laminated in the top semiconductor material annular of multiple basic parallel planes; the first (4) semiconductor material with the first concentration first polar of charging current substrate, and from the first (4) selective removal semiconductor material with one of the depth of the first direction exchange, the first direction is substantially parallel in structure and plane; to provide of the first direction of the three (8) first polar charging current carrier concentration gradient. A photon source, wherein comprises the junction semiconductor device.