ATE402276T1

Methods of depositing materials over substrates and methods of forming layers over substrates

Abstract

The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.

Term

Term ended

Projected expiry passed 9 August 2024, 2.1 years ago.

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65222403United States of AmericaA

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US2005042374A1United States of AmericaA1
TW200512311ATaiwan Province of ChinaA
WO2005047563A1World Intellectual Property Organization (WIPO)A1
KR20060037422ARepublic of KoreaA
EP1656469A1European Patent Office (EPO)A1
US7048968B2United States of AmericaB2
CN1839217AChinaA
US2006222770A1United States of AmericaA1
JP2007502021AJapanA
KR100762575B1Republic of KoreaB1
TWI288785BTaiwan Province of ChinaB
EP1656469B1European Patent Office (EPO)B1
AT402276TAustriaT
ATE402276T1This recordAustriaT1
DE602004015300D1GermanyD1
US7544388B2United States of AmericaB2
US2009215252A1United States of AmericaA1
CN1839217BChinaB
US7794787B2United States of AmericaB2