AT402276T

Methods of depositing materials over substrates and methods of forming layers over substrates

Abstract

The present invention includes the use of supercritical fluids to introduce precursors into the reaction chamber. In some aspects, a supercritical fluid is used to introduce at least one precursor into a chamber during ALD, a supercritical fluid is in a particular mode is used in order to introduce multiple precursors into the reaction chamber during ALD. The present invention is, for example, metal oxides, metal nitrides, such as metal-containing materials, including, and a material composed of a metal, may be used to form a variety of materials. Since the metal oxide on the surface of the metal substrate has a layer containing a precursor for forming a metal-containing can be used to introduce a second precursor into the reaction chamber may be formed by using a supercritical fluid. Subsequently, the metal-containing layer is at least a part of the metal layer of the metal inside the reaction with oxygen may be converted to metal oxide.

Term

Term ended

Expired 9 August 2024, 2.1 years ago.

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18 members in 9 offices

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Priority claims
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65222403United States of AmericaA

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US2005042374A1United States of AmericaA1
TW200512311ATaiwan Province of ChinaA
WO2005047563A1World Intellectual Property Organization (WIPO)A1
KR20060037422ARepublic of KoreaA
EP1656469A1European Patent Office (EPO)A1
US7048968B2United States of AmericaB2
CN1839217AChinaA
US2006222770A1United States of AmericaA1
JP2007502021AJapanA
KR100762575B1Republic of KoreaB1
TWI288785BTaiwan Province of ChinaB
EP1656469B1European Patent Office (EPO)B1
AT402276TThis recordAustriaT
DE602004015300D1GermanyD1
US7544388B2United States of AmericaB2
US2009215252A1United States of AmericaA1
CN1839217BChinaB
US7794787B2United States of AmericaB2