ATE345577T1

Contamination controlling method and plasma processing chamber

Abstract

A plasma processing chamber includes a substrate holder and a member of silicon carbide such as a liner, focus ring, perforated baffle or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.

Term

Term ended

Projected expiry passed 26 March 2019, 7.5 years ago.

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34 members in 11 offices

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5090298United States of AmericaA

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WO9950886A1World Intellectual Property Organization (WIPO)A1
WO0019481A2World Intellectual Property Organization (WIPO)A2
AU1440100AAustraliaA
US6129808AUnited States of AmericaA
EP1068632A1European Patent Office (EPO)A1
KR20010042268ARepublic of KoreaA
KR20010075264ARepublic of KoreaA
EP1145273A2European Patent Office (EPO)A2
TW460972BTaiwan Province of ChinaB
CN1319247AChinaA
WO0019481A3World Intellectual Property Organization (WIPO)A3
WO0019481A9World Intellectual Property Organization (WIPO)A9
EP1145273A3European Patent Office (EPO)A3
JP2002510858AJapanA
US6394026B1United States of AmericaB1
US2002102858A1United States of AmericaA1
JP2002533911AJapanA
US6464843B1United States of AmericaB1
US6583064B2United States of AmericaB2
TW575676BTaiwan Province of ChinaB
RU2237314C2Russian FederationC2
EP1145273B1European Patent Office (EPO)B1
DE69928289D1GermanyD1
KR100566908B1Republic of KoreaB1
KR100602072B1Republic of KoreaB1
DE69928289T2GermanyT2
EP1068632B1European Patent Office (EPO)B1
AT345577TAustriaT
ATE345577T1This recordAustriaT1
DE69934000D1GermanyD1
CN1328755CChinaC
DE69934000T2GermanyT2
JP4554815B2JapanB2
JP4612190B2JapanB2