AT345577T

Contamination controlling method and plasma processing chamber

Abstract

(57) The summary plasma treatment chamber contains a substrate holding fixture and silicon carbide components, such as Rajna, a focusing ring, punched バッフル, and a gas distribution board, and it has the exposure surface where a component adjoins a substrate holding fixture, and is effective for the exposure surface making contamination under substrate processing the minimum. The antenna with which a chamber carries out inductive coupling of the RF energy through a gas distribution board, and excites processing gas to a plasma state can be included.

Term

No projected expiry on record.

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34 members in 11 offices

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Priority claims
DocumentOfficeKindDate
5090298United States of AmericaA

Members34

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WO9950886A1World Intellectual Property Organization (WIPO)A1
WO0019481A2World Intellectual Property Organization (WIPO)A2
AU1440100AAustraliaA
US6129808AUnited States of AmericaA
EP1068632A1European Patent Office (EPO)A1
KR20010042268ARepublic of KoreaA
KR20010075264ARepublic of KoreaA
EP1145273A2European Patent Office (EPO)A2
TW460972BTaiwan Province of ChinaB
CN1319247AChinaA
WO0019481A3World Intellectual Property Organization (WIPO)A3
WO0019481A9World Intellectual Property Organization (WIPO)A9
EP1145273A3European Patent Office (EPO)A3
JP2002510858AJapanA
US6394026B1United States of AmericaB1
US2002102858A1United States of AmericaA1
JP2002533911AJapanA
US6464843B1United States of AmericaB1
US6583064B2United States of AmericaB2
TW575676BTaiwan Province of ChinaB
RU2237314C2Russian FederationC2
EP1145273B1European Patent Office (EPO)B1
DE69928289D1GermanyD1
KR100566908B1Republic of KoreaB1
KR100602072B1Republic of KoreaB1
DE69928289T2GermanyT2
EP1068632B1European Patent Office (EPO)B1
AT345577TThis recordAustriaT
ATE345577T1AustriaT1
DE69934000D1GermanyD1
CN1328755CChinaC
DE69934000T2GermanyT2
JP4554815B2JapanB2
JP4612190B2JapanB2