Ethylenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
Abstract
An ethylenediaminetetraacetic acid or a mono-, di-, tri- or tetraammonium salt thereof residue cleaning composition removes photoresist and other residue from integrated circuit substrates. The balance of the composition is desirably made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the ethylenediaminetetraacetic acid or a mono-, di-, tri- or tetraammonium salt thereof in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.
Term
Term ended
Projected expiry passed 17 March 2018, 8.5 years ago.
- Priority
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- Published
- Projected expiry
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112 members in 14 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 83338297 | United States of America | A |
Members112
| Document | Office | Kind | |
|---|---|---|---|
| EP0485161A1 | European Patent Office (EPO) | A1 | |
| JPH04289866A | Japan | A | |
| EP0578507A2 | European Patent Office (EPO) | A2 | |
| US5279771A | United States of America | A | |
| KR940005789A | Republic of Korea | A | |
| US5334332A | United States of America | A | |
| JPH06266119A | Japan | A | |
| US5381807A | United States of America | A | |
| EP0578507A3 | European Patent Office (EPO) | A3 | |
| US5482566A | United States of America | A | |
| KR970007328B1 | Republic of Korea | B1 | |
| US5672577A | United States of America | A | |
| JPH09296200A | Japan | A | |
| JP2691952B2 | Japan | B2 | |
| WO9836045A1 | World Intellectual Property Organization (WIPO) | A1 | |
| WO9840453A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU6697998A | Australia | A | |
| WO9845399A1 | World Intellectual Property Organization (WIPO) | A1 | |
| EP0485161B1 | European Patent Office (EPO) | B1 | |
| AT176337T | Austria | T | |
| ATE176337T1 | Austria | T1 | |
| DE69130823D1 | Germany | D1 | |
| EP0909311A1 | European Patent Office (EPO) | A1 | |
| US5902780A | United States of America | A | |
| US5911835A | United States of America | A | |
| ES2129403T3 | Spain | T3 | |
| JPH11194505A | Japan | A | |
| GR3030070T3 | Greece | T3 | |
| DE69130823T2 | Germany | T2 | |
| DK0485161T3 | Denmark | T3 | |
| US5981454A | United States of America | A | |
| US6000411A | United States of America | A | |
| EP0975731A1 | European Patent Office (EPO) | A1 | |
| JP3048207B2 | Japan | B2 | |
| TW396202B | Taiwan Province of China | B | |
| US6110881A | United States of America | A | |
| US6121217A | United States of America | A | |
| US6140287A | United States of America | A | |
| KR20000064914A | Republic of Korea | A | |
| US6156661A | United States of America | A | |
| TW416984B | Taiwan Province of China | B | |
| KR20010006024A | Republic of Korea | A | |
| JP2001500922A | Japan | A | |
| EP0975731A4 | European Patent Office (EPO) | A4 | |
| US6187730B1 | United States of America | B1 | |
| EP0909311A4 | European Patent Office (EPO) | A4 | |
| TW426816B | Taiwan Province of China | B | |
| JP3150306B2 | Japan | B2 | |
| US6221818B1 | United States of America | B1 | |
| US6242400B1 | United States of America | B1 | |
| US2001006936A1 | United States of America | A1 | |
| US6276372B1 | United States of America | B1 | |
| US6319885B1 | United States of America | B1 | |
| JP2001526836A | Japan | A | |
| US6367486B1 | United States of America | B1 | |
| US2002052301A1 | United States of America | A1 | |
| US6399551B1 | United States of America | B1 | |
| US2002183219A1 | United States of America | A1 | |
| US6492311B2 | United States of America | B2 | |
| KR100355212B1 | Republic of Korea | B1 | |
| US2003032567A1 | United States of America | A1 | |
| US6546939B1 | United States of America | B1 | |
| US6564812B2 | United States of America | B2 | |
| KR100386137B1 | Republic of Korea | B1 | |
| EP0909311B1 | European Patent Office (EPO) | B1 | |
| AT244751T | Austria | T | |
| ATE244751T1 | Austria | T1 | |
| DE69816219D1 | Germany | D1 | |
| US2003228990A1 | United States of America | A1 | |
| WO03104185A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU2002315510A1 | Australia | A1 | |
| CN1465687A | China | A | |
| US2004018949A1 | United States of America | A1 | |
| US2004067860A1 | United States of America | A1 | |
| DE69816219T2 | Germany | T2 | |
| US2004147420A1 | United States of America | A1 | |
| US2004198621A1 | United States of America | A1 | |
| US6825156B2 | United States of America | B2 | |
| EP1509490A1 | European Patent Office (EPO) | A1 | |
| KR20050037511A | Republic of Korea | A | |
| US2005090416A1 | United States of America | A1 | |
| JP2005528660A | Japan | A | |
| EP0578507B1 | European Patent Office (EPO) | B1 | |
| US2006003909A1 | United States of America | A1 | |
| CN1721516A | China | A | |
| DE69333877D1 | Germany | D1 | |
| SG120055A1 | Singapore | A1 | |
| US7051742B2 | United States of America | B2 | |
| DE69333877T2 | Germany | T2 | |
| EP0975731B1 | European Patent Office (EPO) | B1 | |
| AT340243T | Austria | T | |
| ATE340243T1This record | Austria | T1 | |
| DE69835951D1 | Germany | D1 | |
| JP3850039B2 | Japan | B2 | |
| US7144848B2 | United States of America | B2 | |
| US7144849B2 | United States of America | B2 | |
| US2007078074A1 | United States of America | A1 | |
| US7205265B2 | United States of America | B2 | |
| DE69835951T2 | Germany | T2 | |
| US2007207938A1 | United States of America | A1 |
Numbers
- Application
- 98911697
Titles2
- English
- COMPOSITION FOR REMOVING RESIDUES IN SEMICONDUCTOR PRODUCTION BASED ON ETHYLENEDIAMINETRACETACETIC ACID OR ITS AMMONIUM SALT AND METHOD
- German
- ZUSAMMENSETZUNG ZUR ENTFERNUNG VON RÜCKSTÄNDEN BEI DER HALBLEITERHERSTELLUNG AUF BASIS VON ETHYLENDIAMINTETRAESSIGSÄURE ODER IHREM AMMONIUMSALZ SOWIE VERFAHREN
Classification
- CPC, 37
- B24B37/042
- C11D7/26
- B08B3/08
- C09D9/00
- C11D3/2058
- C11D3/2065
- C11D3/2086
- C11D3/30
- C11D3/3427
- C11D3/3472
- C11D3/43
- C11D7/261
- C11D7/263
- C11D7/265
- C11D7/267
- C11D7/32
- C11D7/3209
- C11D7/3218
- C11D7/3227
- C11D7/3245
- C11D7/3254
- C11D7/3263
- C11D7/3272
- C11D7/3281
- C11D7/34
- C11D7/5013
- C23G1/103
- C23G1/205
- G03F7/42
- G03F7/425
- C11D2111/24
- C11D2111/22
- H10P70/234
- H10P70/273
- H10P50/287
- H10W20/081
- H10W20/063
- IPC, 23
- B08B3 08
- B24B37 04
- C09D9 00
- C11D3 20
- C11D3 30
- C11D3 34
- C11D3 43
- C11D7 26
- C11D7 32
- C11D7 34
- C11D7 50
- C11D11 00
- C23G1 10
- C23G1 20
- G03F7 42
- H01L21 02
- H01L21 304
- H01L21 306
- H01L21 308
- H01L21 311
- H01L21 321
- H01L21 3213
- H01L21 768