AT536627T
Magnetic mirror plasma source
Abstract
The preferred embodiments described herein provide a magnetic mirror plasma source. While the traditional magnetic/electrostatic confinement method is ideal for many applications, some processes are not best served with this arrangement. The preferred embodiments described herein present a new technique to confine electrons ( 3 ) to produce a low pressure, dense plasma directly on a substrate surface ( 75 ). With these preferred embodiments, a combination of electrostatic and mirror magnetic confinement is implemented. The result is a novel plasma source that has unique and important advantages enabling advancements in PECVD, etching, and plasma treatment processes.
Term
Term ended
Expired 10 April 2022, 4.5 years ago.
- Priority
- Filed
- Granted
- Expired
- Today
33 members in 6 offices
Priority claims4
| Document | Office | Kind | Date |
|---|---|---|---|
| 28536001 | United States of America | P | |
| 28536101 | United States of America | P | |
| 28536401 | United States of America | P | |
| 0211542 | United States of America | W |
Members33
| Document | Office | Kind | |
|---|---|---|---|
| WO02086185A1 | World Intellectual Property Organization (WIPO) | A1 | |
| WO02086932A1 | World Intellectual Property Organization (WIPO) | A1 | |
| WO02086937A1 | World Intellectual Property Organization (WIPO) | A1 | |
| WO02086937B1 | World Intellectual Property Organization (WIPO) | B1 | |
| WO02086932B1 | World Intellectual Property Organization (WIPO) | B1 | |
| EP1388159A1 | European Patent Office (EPO) | A1 | |
| EP1390558A1 | European Patent Office (EPO) | A1 | |
| EP1390964A1 | European Patent Office (EPO) | A1 | |
| US2004135485A1 | United States of America | A1 | |
| US2004149574A1 | United States of America | A1 | |
| US2004155592A1 | United States of America | A1 | |
| JP2004537825A | Japan | A | |
| JP2005504880A | Japan | A | |
| JP2005505891A | Japan | A | |
| US6911779B2 | United States of America | B2 | |
| US7023128B2 | United States of America | B2 | |
| US7294283B2 | United States of America | B2 | |
| JP4264474B2 | Japan | B2 | |
| JP4264475B2 | Japan | B2 | |
| JP4339597B2 | Japan | B2 | |
| EP1388159A4 | European Patent Office (EPO) | A4 | |
| EP1390558A4 | European Patent Office (EPO) | A4 | |
| EP1390964A4 | European Patent Office (EPO) | A4 | |
| EP1390558B1 | European Patent Office (EPO) | B1 | |
| AT496388T | Austria | T | |
| ATE496388T1 | Austria | T1 | |
| DE60238979D1 | Germany | D1 | |
| EP1388159B1 | European Patent Office (EPO) | B1 | |
| EP1390964B1 | European Patent Office (EPO) | B1 | |
| AT536627TThis record | Austria | T | |
| AT536628T | Austria | T | |
| ATE536627T1 | Austria | T1 | |
| ATE536628T1 | Austria | T1 |
Numbers
- Application
- 2723836
Titles2
- German
- MAGNETSPIEGELPLASMAQUELLE
- English
- MAGNET SPIEGEL PLASMA SOURCE
Classification
- CPC, 8
- H01J27/14
- C23C16/50
- C23C16/505
- C23C16/545
- H01J37/32623
- H01J37/3266
- H01J37/3277
- H05H1/14
- IPC, 16
- H01J7 24
- H05H1 24
- C23C14 28
- C23C14 30
- C23C14 35
- C23C16 50
- C23C16 503
- C23C16 505
- C23C16 54
- C23F4 00
- H01J37 32
- H01J49 42
- H01L21 205
- H01L21 3065
- H05H1 14
- H05H1 46