AT535938T
Non-volatile SRAM memory cell with mobile-gate transistors and piezoelectric activation
Abstract
This record has no abstract on file.
Term
1.8 yearsleft in the term
Expires 8 July 2028.
- Priority
- Filed
- Granted
- Today
- Expires
9 members in 4 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 0756348 | France | A |
Members9
| Document | Office | Kind | |
|---|---|---|---|
| EP2015358A2 | European Patent Office (EPO) | A2 | |
| US2009016095A1 | United States of America | A1 | |
| FR2918794A1 | France | A1 | |
| EP2015358A3 | European Patent Office (EPO) | A3 | |
| FR2918794B1 | France | B1 | |
| US7768821B2 | United States of America | B2 | |
| EP2015358B1 | European Patent Office (EPO) | B1 | |
| AT535938TThis record | Austria | T | |
| ATE535938T1 | Austria | T1 |
Numbers
- Application
- 8159884
Titles2
- German
- NICHTFLÜCHTIGE SRAM-SPEICHERZELLE MIT TRANSISTOREN MIT BEWEGLICHEM GATE UND PIEZOELEKTRISCHER BETÄTIGUNG
- English
- NON-VOLATILE SRAM MEMORY CELL WITH TRANSISTORS WITH MOVABLE GATE AND PIEZOELECTRIC ACTUATION
Classification
- CPC, 9
- H01L27/1104
- B82Y10/00
- H10B10/12
- G11C14/0054
- G11C23/00
- G11C2213/17
- H01L29/515
- H01L27/11
- H10B10/00
- IPC, 8
- H01L21 8244
- G11C14 00
- G11C23 00
- H01L21 28
- H01L27 11
- H01L27 20
- H01L29 51
- H01L41 09