AT487231T

Organosilicate resin formulation for use in microelectronic devices

Abstract

In electronic devices of manufacturing in the used to formed a layer or multilayer of can curing of organic Portland combination property, it including: (a) has at least a contains and Silicon Atomic combined of Ene not saturated group of n-oxygen base or n oxygen base of Silicon n-; b) has at least a contains and Silicon Atomic combined of Fong ring group of n-oxygen base or n oxygen base of Silicon n-; (c) potential acid catalyst and (d) any selected of, has at least a and Silicon Atomic combined of C1-C6 alkyl of n-oxygen base or n oxygen base of Silicon n-.

Term

No projected expiry on record.

  1. Priority
  2. Filed
  3. Granted
  4. Today

17 members in 9 offices

This recordMember, by publication datePriority claim

Priority claims2

Priority claims
DocumentOfficeKindDate
45973003United States of AmericaP
2004010330United States of AmericaW

Members17

Family members, oldest first
DocumentOfficeKind
WO2004090965A2World Intellectual Property Organization (WIPO)A2
TW200505966ATaiwan Province of ChinaA
WO2004090965A3World Intellectual Property Organization (WIPO)A3
KR20050108417ARepublic of KoreaA
EP1614151A2European Patent Office (EPO)A2
CN1768418AChinaA
JP2006522861AJapanA
US2007185298A1United States of AmericaA1
EP1614151B1European Patent Office (EPO)B1
AT487231TThis recordAustriaT
ATE487231T1AustriaT1
DE602004029879D1GermanyD1
CN1768418BChinaB
EP2278611A1European Patent Office (EPO)A1
US8178159B2United States of AmericaB2
EP2278611B1European Patent Office (EPO)B1
KR101197526B1Republic of KoreaB1