Enhancement of electron and hole mobilities in 110 under biaxial compressive strain

The present invention provides a semiconductor material, and to improve the mobility of electrons and holes, including Si-containing layer having a 110 crystal orientation and biaxial compressive strain. The term "biaxial compressive strain" is here is for the production of a semiconductor material on a Si-containing layer to say length induced a net stress caused in the direction of compressive stress and lateral stress. Another aspect of the present invention relates to a method of forming a semiconductor material of the present invention. The method of the present invention comprising the steps of: providing a silicon-containing layer 110, forming a biaxial strain in the silicon-containing layer 110.