AT434178T

Surface inspection using a non-vibrating contact potential probe

Abstract

The method and system which specify the defect on the surface of material, or contamination. In this method and system, materials, such as a semiconductor wafer, are offered, a wafer is scanned using a non-vibrating formula contact-potential-difference sensor, contact-potential-difference data is generated, this data is processed, and the pattern in which a defect or the characteristic of contamination is shown is specified.

Term

No projected expiry on record.

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45 members in 9 offices

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77162804United States of AmericaA
2004025249United States of AmericaW

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US2004152250A1United States of AmericaA1
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TW200526949ATaiwan Province of ChinaA
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US6957154B2United States of AmericaB2
US2005234658A1United States of AmericaA1
KR20050105197ARepublic of KoreaA
EP1597569A2European Patent Office (EPO)A2
JP2006517349AJapanA
US7092826B2United States of AmericaB2
US7103482B2United States of AmericaB2
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WO2006098925A1World Intellectual Property Organization (WIPO)A1
EP1711801A1European Patent Office (EPO)A1
US2006276976A1United States of AmericaA1
US2007010954A1United States of AmericaA1
TW200710386ATaiwan Province of ChinaA
JP2007520721AJapanA
CN101069092AChinaA
KR20070112156ARepublic of KoreaA
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EP1869436A1European Patent Office (EPO)A1
US7337076B2United States of AmericaB2
US7379826B2United States of AmericaB2
US2008162066A1United States of AmericaA1
JP2008536104AJapanA
EP1711801B1European Patent Office (EPO)B1
AT434178TThis recordAustriaT
ATE434178T1AustriaT1
DE602004021637D1GermanyD1
EP1869436B1European Patent Office (EPO)B1
AT445154TAustriaT
ATE445154T1AustriaT1
DE602006009637D1GermanyD1
TWI317809BTaiwan Province of ChinaB
US7634365B2United States of AmericaB2
KR100950641B1Republic of KoreaB1
JP4459289B2JapanB2
CN101069092BChinaB
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