Non-volatile memory and method with bit line to bit line coupled compensation

The invention claims the device is equipped with a wire comprises a non-volatile memory and method for bit line and compensation. For programming to a memory memory cells inner sides; whenever the memory storage unit is achieved wherein target state and is forbidden to a or the block system is further un-re-changeable program, wherein the kettle is a programming state of the adjacent memory storage unit is provided with a micro variation. The invention claims programs as part of the circuit and method, and a displacement of perturbation to a to the kettle programming state wherein the adjacent memory storage unit. The displacement with a kettle programming of the adjacent position of memory storage unit is connected with the coupling to with the memory storage unit is forbidden to program. The groove; a process or made of the parallel high-density programming memory storage battery the internal device minimum.