AT409717T
Organosilicon precursors for interlayer dielectric films with low dielectric constants
Abstract
This record has no abstract on file.
Term
Term ended
Expired 17 January 2022, 4.7 years ago.
- Priority
- Filed
- Granted
- Expired
- Today
22 members in 10 offices
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 76126901 | United States of America | A | |
| 94404201 | United States of America | A |
Members22
| Document | Office | Kind | |
|---|---|---|---|
| EP1225194A2 | European Patent Office (EPO) | A2 | |
| KR20020062192A | Republic of Korea | A | |
| IL147609A0 | Israel | A0 | |
| CN1367205A | China | A | |
| JP2002256434A | Japan | A | |
| EP1225194A3 | European Patent Office (EPO) | A3 | |
| US2002142579A1 | United States of America | A1 | |
| US6583048B2 | United States of America | B2 | |
| SG98468A1 | Singapore | A1 | |
| KR100447684B1 | Republic of Korea | B1 | |
| TWI235428B | Taiwan Province of China | B | |
| CN1644753A | China | A | |
| CN1240780C | China | C | |
| JP3762304B2 | Japan | B2 | |
| IL147609A | Israel | A | |
| DE02001014T1 | Germany | T1 | |
| CN100410420C | China | C | |
| EP1225194B1 | European Patent Office (EPO) | B1 | |
| AT409717TThis record | Austria | T | |
| ATE409717T1 | Austria | T1 | |
| DE60229077D1 | Germany | D1 | |
| EP1225194B2 | European Patent Office (EPO) | B2 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 2001014
Titles2
- German
- VERFAHREN ZUR HERSTELLUNG EINER DIELEKTRISCHEN ZWISCHENSCHICHT UNTER VERWENDUNG VON ORGANOSILIKON-VORLÄUFERN
- English
- METHOD FOR PRODUCING A DIELECTRIC INTERMEDIATE LAYER USING ORGANOSILICON PRECURSORS
Classification
- CPC, 9
- B05D1/60
- C23C16/401
- H01L21/02126
- H01L21/02131
- H01L21/02216
- H01L21/02274
- H01L21/3121
- H01L21/31629
- H01L21/31633
- IPC, 5
- B05D7 24
- C08G77 04
- C23C16 40
- H01L21 312
- H01L21 316