Non-volatile memory and method with bit line compensation dependent on neighboring operating modes

When programming a contiguous page of memory storage units, memory storage unit has reached its targeted state and prohibited program or each time the closure from another program to generate a disturbance to the neighboring memory storage unit still under programming. The present invention provides a method for the offset and disturbance as part of the programming circuit is still being added to the neighboring memory storage units under programming. The offset is added to a voltage offset to the bit line of the storage unit under programming. The voltage offset is a predetermined function of whether the mode of generating a disturbance, as in none of the neighbors or one or both of the program inhibit mode. In this way, a high-density memory storage units is unique in parallel with a programming error is eliminated or minimized. A memory storage unit, page programming, the target state, the bit line voltage offset