High rate silicon deposition method at low pressures

(57) It is the summary low-pressure high-speed silicon deposition method, and is an operating method which offers the combination of wafer temperature, a gas stream, and 室 pressure including the method of operating the CVD reactor (56) which has the homogeneity of an advanced temperature and a gas stream. If this method is followed, a substrate (60) is put on a vacuum chamber, reactant gas is supplied in parallel with a substrate at high speed with two or more gas infusion instruments (64) which are carrying out temperature control, and deposition speed offers the conditions restricted only with the delivery speed to the substrate face of unconverted gas, and the removal speed of a reaction by-product. With the combination of process conditions, the reaction in the wafer surface is moved to the situation where deposition speed exceeds a crystallization speed, and very small crystal growth, therefore surface granularity bring about a * with an outline of 5 nm 7 nm very smooth polysilicon film to the film of 2500A thickness.