Method for producing a semiconductor-metal contact through a dielectric layer

Procedure for the electrical contacting of a layer (13) of semiconductor coated with at least one layer (12) Dielectric by local heating by means of the energy input radiation from a laser, applying the layer (12) dielectric layer ( 11) metal, characterized by a laser (9) this layer (11) metal locally punctiform or linear manner in a controlled manner such that, after the formation of a molten mixture exclusively from heated briefly the layer (11) metallic layer (12) dielectric and the surface layer (13) of semiconductor, which is immediately below the layer (12) dielectric ends the supply of energy of laser radiation, causing solidification of the molten mixture to an electrical contact between the layer (13) and semiconductor layer (11) metal, that due to melting as small as possible of the surface of the layer (13) of semiconductor, which is below the layer (12) dielectric, has a reduced depth of contact of a few micrometers, so that both the layer (12) dielectric, as well as the layer (13) of semiconductor contact are not modified from the view of its properties beyond the area of ​​electrical contact by overheating during the local supply of thermal energy.