Nova Patents
WO2023227885A1

Process for forming a coating

Abstract

A chemical vapor deposition process is provided for forming a layer based on nickel oxide over a glass substrate. A gaseous mixture is formed and includes a nickel-containing compound selected from the group consisting of nickel(II) acetylacetonate and derivatives thereof, and an oxygen-containing precursor selected from the group consisting of a carbonyl compound and molecular oxygen. The gaseous mixture is directed toward and along the glass substrate, and is reacted over the glass substrate to form a nickel oxide coating thereon.

WO2023227885A1, drawing sheet 1
Sheet 1 of 2

Term

No projected expiry on record.

  1. Priority
  2. Filed
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27 claims: 27 independent, 0 dependent

  1. 1
    CLAIMS1 . A chemical vapor deposition process for forming a nickel oxide coating over a glass substrate, comprising:providing a glass substrate;forming a gaseous mixture comprised of a nickel-containing compound selected from the group consisting of nickel(ll) acetylacetonate and derivatives thereof, and an oxygen-containing precursor selected from the group consisting of a carbonyl compound and molecular oxygen;directing the gaseous mixture toward and along the glass substrate;and reacting the gaseous mixture over the glass substrate to form a coating of nickel oxide over the glass substrate.
  2. 2
    The chemical vapor deposition process defined in claim 1 , wherein the nickel- containing compound is selected from the group consisting of nickel(ll) acetylacetonate, bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(ll), nickel(ll) hexafluoroacetylacetonate, and nickel(ll) trifluoroacetylacetonate.
  3. 3
    The chemical vapor deposition process defined in any preceding claim, wherein the nickel-containing compound is bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(ll).
  4. 4
    The chemical vapor deposition process defined in any preceding claim, wherein the oxygen-containing precursor is molecular oxygen.
  5. 5
    The chemical vapor deposition process defined in any of claims 1 to 3, wherein the oxygen-containing precursor is a carbonyl compound.
  6. 6
    The chemical vapor deposition process defined in any of claims 1 to 3 and 5, wherein the oxygen-containing precursor is an ester having an alkyl group with a [3- hydrogen.
  7. 7
    The chemical vapor deposition process defined in any of claims 1 to 3, 5 and 6, wherein the oxygen-containing precursor is one or more of ethyl acetate, ethyl formate, ethyl propionate, isopropyl formate, isopropyl acetate, n-butyl acetate and t-butyl acetate.
  8. 8
    The chemical vapor deposition process defined in any of claims 1 to 3 and 5 to 7, wherein the oxygen-containing precursor is ethyl acetate.
  9. 9
    The chemical vapor deposition process defined in any of claims 1 to 3 and 5 to 8, wherein the gaseous mixture further comprises molecular oxygen.
  10. 10
    The chemical vapor deposition process defined in any preceding claim, wherein the glass substrate is a glass ribbon in a float glass manufacturing process.
  11. 11
    The chemical vapor deposition process defined in any preceding claim, further comprising providing a coating apparatus and feeding the gaseous mixture through the coating apparatus before forming the nickel oxide coating over the glass substrate.
  12. 12
    The chemical vapor deposition process defined in any preceding claim, wherein the nickel oxide coating is formed on a deposition surface of the glass substrate which is at essentially atmospheric pressure when the gaseous mixture is reacted to form the nickel oxide coating.
  13. 13
    The chemical vapor deposition process defined in any preceding claim, wherein the nickel oxide coating is formed over a coating previously formed on the glass substrate.
  14. 14
    The chemical vapor deposition process defined in any preceding claim, wherein the nickel oxide coating is formed over a coating based on silicon oxide previously formed over the glass substrate.
  15. 15
    The chemical vapor deposition process defined in any preceding claim, wherein the nickel oxide coating is formed over a coating based on tin oxide previously formed over the glass substrate.
  16. 16
    The chemical vapor deposition process defined in claim 15, wherein the coating based on tin oxide is doped with fluorine.
  17. 17
    The chemical vapor deposition process defined in any preceding claim, wherein the nickel oxide coating is formed over a coating based on tin oxide that is formed over a coating based on silicon oxide that is in turn formed over the glass substrate.
  18. 18
    The chemical vapor deposition process defined in any preceding claim, wherein the glass substrate is at a temperature of between 1000°F (538°C) and OOT (760°C) when the nickel oxide coating is formed thereover.
  19. 19
    The chemical vapor deposition process defined by any preceding claim, wherein the nickel oxide coating is pyrolytic.
  20. 20
    The chemical vapor deposition process defined by any preceding claim, wherein, the nickel oxide coating is the outermost coating stack over a surface of the glass substrate.
  21. 21
    The chemical vapor deposition process defined by any preceding claim, wherein the glass substrate is provided with a coating stack consisting of, in sequence from the glass substrate, a coating based on silicon oxide, a coating based on tin oxide, and the coating of nickel oxide.
  22. 22
    The chemical vapor deposition process defined by any of claims 1 to 14 and 18 to 20, wherein the glass substrate is provided with a coating stack consisting of, in sequence from the glass substrate, a coating based on silicon oxide and the coating of nickel oxide.
  23. 23
    The chemical vapor deposition process defined by any preceding claim, wherein the ratio of oxygen to nickel in the nickel oxide coating is at least 0.5, preferably at least 0.6, more preferably at least 0.7, but preferably at most 1.2, more preferably at most 1.0, even more preferably at most 0.9.
  24. 24
    The chemical vapor deposition process defined by any preceding claim, wherein the gaseous mixture comprises at least 0.3 vol% of the nickel-containing compound, preferably at least 0.4 vol% of the nickel-containing compound, more preferably at least 0.5 vol% of the nickel-containing compound, but preferably at most 5.0 vol% of the nickel- containing compound, more preferably at most 2.0 vol% of the nickel-containing compound, even more preferably at most 1.0 vol% of the nickel-containing compound.
  25. 25
    The chemical vapor deposition process defined by any preceding claim, wherein the gaseous mixture comprises at least 3.0 vol% of the oxygen-containing precursor, preferably at least 4.0 vol% of the oxygen-containing precursor, more preferably at least 5.0 vol% of the oxygen-containing precursor, but preferably at most 20.0 vol% of the oxygen-containing precursor, more preferably at most 12.0 vol% of the oxygen-containing precursor, even more preferably at most 10.0 vol% of the oxygen-containing precursor.
  26. 26
    A coated glass substrate formed in accordance with the chemical vapor deposition process defined by any preceding claim.
  27. 27
    A perovskite solar cell utilizing a coated glass substrate formed in accordance with the chemical vapor deposition process defined by any of claims 1 to 26 or as defined by claim 26 as a buffer layer.
Independent claims27