WO2010141089A3

Higher selectivity, method for passivating short circuit current paths in semiconductor devices

Abstract

A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of current between the substrate of said photovoltaic device and said counter electrode so as to ensure high selectivity of modification of a transparent conductive oxide material of said photovoltaic module adjacent said short circuit defect, while leaving the transparent conductive oxide" material of "said photovoltaic module of nori:defect areasTin its unmodified form.

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Citations
DocumentRelationOfficeCategoryCited during
US2005011550A1CitesUnited States of AmericaAInternational search
US5084400ACitesUnited States of AmericaYInternational search
US7485474B2CitesUnited States of AmericaYInternational search