Higher selectivity, method for passivating short circuit current paths in semiconductor devices
Abstract
A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of current between the substrate of said photovoltaic device and said counter electrode so as to ensure high selectivity of modification of a transparent conductive oxide material of said photovoltaic module adjacent said short circuit defect, while leaving the transparent conductive oxide" material of "said photovoltaic module of nori:defect areasTin its unmodified form.
Term
No projected expiry on record.
- Priority
- Filed
- Published
- Today
Every citation, both ways
| Document | Relation | Office | Category | Cited during |
|---|---|---|---|---|
| US2005011550A1 | Cites | United States of America | A | International search |
| US5084400A | Cites | United States of America | Y | International search |
| US7485474B2 | Cites | United States of America | Y | International search |
12 members in 3 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 45550309 | United States of America | A |
Members12
| Document | Office | Kind | |
|---|---|---|---|
| US2007065992A1 | United States of America | A1 | |
| WO2007035200A2 | World Intellectual Property Organization (WIPO) | A2 | |
| US7256140B2 | United States of America | B2 | |
| WO2007035200A3 | World Intellectual Property Organization (WIPO) | A3 | |
| US2007275545A1 | United States of America | A1 | |
| EP1927131A2 | European Patent Office (EPO) | A2 | |
| US7485474B2 | United States of America | B2 | |
| US2009246907A1 | United States of America | A1 | |
| EP1927131A4 | European Patent Office (EPO) | A4 | |
| WO2010141089A2 | World Intellectual Property Organization (WIPO) | A2 | |
| WO2010141089A3This record | World Intellectual Property Organization (WIPO) | A3 | |
| US7923341B2 | United States of America | B2 |
3 legal events, as 2 offices reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | Office | |
|---|---|---|---|
| Ep: pct application non-entry in european phase122 | 122 | WO | |
| Non-entry into the national phaseNENP | NENP | DE | |
| Ep: the epo has been informed by wipo that ep was designated in this application121 | 121 | WO |
Numbers
- Publication
- 2010/141089
- Application
- 1618
Titles2
- English
- HIGHER SELECTIVITY, METHOD FOR PASSIVATING SHORT CIRCUIT CURRENT PATHS IN SEMICONDUCTOR DEVICES
- French
- SÉLECTIVITÉ PLUS ÉLEVÉE, PROCÉDÉ PERMETTANT DE PASSIVER LES TRAJETS DE COURANT DE COURT-CIRCUIT DANS DES DISPOSITIFS À SEMI-CONDUCTEUR
Classification
- CPC, 9
- H10F71/00
- H10F71/129
- Y02E10/50
- Y10T428/24926
- Y10T428/2476
- Y10T428/23929
- Y02P70/50
- H10F71/10
- H10F71/135
- IPC, 2
- H01L31 042
- H10P95 80
Designated states4
- Regional, 4
- Zimbabwe
- Turkmenistan
- Türkiye
- Togo