Colloidal quantum dot light emitting diodes

The present invention is directed to light emitting devices including a first layer of a semiconductor material from the group of a p-type semiconductor and a n-type semiconductor, a layer of colloidal nanocrystals on the first layer of a semiconductor material, and, a second layer of a semiconductor material from the group of a p-type semiconductor and a n-type semiconductor on the layer of colloidal nanocrystals.