Light emitting device package and display device using the same

CROSS-REFERENCE TO RELATED APPLICATION

This application claims benefit of priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2016-0102473 filed on Aug. 11, 2016, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

BACKGROUND

1. Field

The present disclosure relates to a light emitting device package and a display device using the same.

2. Description of Related Art

A semiconductor light-emitting diode (LED) may not only be used as a light source of a lighting apparatus, but also as a light source of various electronic products. For example, such a semiconductor LED is widely used as a light source for various display devices such as TVs, cellular phones, PCs, laptop PCs, personal digital assistants (PDA), or the like.

Display devices according to the related art commonly include a liquid crystal display (LCD) panel and a backlight unit. However, an LED device having a form in which an individual LED device is used as a single pixel, so that a display device does not require a separate backlight unit, has recently been developed. Such a display device may be in compact form, and a high luminance display having excellent light efficiency in comparison with an LCD according to the related art may be implemented. In addition, an aspect ratio of a display screen may be freely changed and a display screen having a large area may be implemented. Therefore, a large display having various forms may be provided.

SUMMARY

An aspect of the present disclosure may provide a light emitting device package with a reduced light-leakage phenomenon and a display device using the same.

According to an aspect of the present disclosure, a light emitting device package may include: a substrate for growth having a plurality of light-emitting windows; a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other; a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit; a metal support layer disposed on at least one surface of each the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth; and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.

According to an aspect of the present disclosure, a light emitting device package may include: a cell array, including a plurality of semiconductor light-emitting units, each semiconductor light-emitting unit having a first surface at a first vertical height and a second surface opposite the first surface at a second vertical height, and each semiconductor light emitting unit including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other; a plurality of wavelength conversion units disposed respectively on the plurality of semiconductor light-emitting units, each wavelength conversion unit having a first surface at the first vertical height and a second surface at a third vertical height, wherein the first vertical height is between the second vertical height and the third vertical height, each wavelength conversion unit configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light; a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth; and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.

According to an aspect of the present disclosure, a display device may include: a display panel including a circuit board and a plurality of light emitting device packages disposed on the circuit board in rows and columns, each of the plurality of light emitting device packages providing a single pixel; a panel driving unit configured to drive the display panel; and a control unit configured to control the panel driving unit, wherein each of the plurality of light emitting device packages includes: a substrate for growth having a plurality of light-emitting windows; a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; a plurality of wavelength conversion units correspondingly disposed inside the plurality of light-emitting windows, each wavelength conversion unit configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light; a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth; and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.

BRIEF DESCRIPTION OF DRAWINGS

The above and other aspects, features and other advantages of the present inventive concept will be more clearly understood from the following detailed description, taken in conjunction with the accompanying drawings, in which:

<figref idref="DRAWINGS">FIG. 1</figref> is a perspective view schematically illustrating a display panel having a light emitting device package according to an example embodiment;

<figref idref="DRAWINGS">FIG. 2</figref> is an enlarged plan view illustrating portion A in <figref idref="DRAWINGS">FIG. 1</figref>;

<figref idref="DRAWINGS">FIG. 3</figref> is an enlarged plan view illustrating the light emitting device package of <figref idref="DRAWINGS">FIG. 2</figref>;

<figref idref="DRAWINGS">FIG. 4</figref> is a side cross-sectional view taken along line I-I′ of <figref idref="DRAWINGS">FIG. 3</figref>, according to some embodiments;

<figref idref="DRAWINGS">FIGS. 5 and 6</figref> are enlarged drawings of portion B and portion C of <figref idref="DRAWINGS">FIG. 4</figref>, according to some embodiments, respectively, to illustrate a light leakage preventing effect of a metal support layer; and

<figref idref="DRAWINGS">FIGS. 7A to 14A and 7B to 14B</figref> are side cross-sectional views schematically illustrating a main manufacturing process of the light emitting device package of <figref idref="DRAWINGS">FIG. 4</figref>, according to some embodiments.

DETAILED DESCRIPTION

Although the figures described herein may be referred to using language such as “one embodiment,” or “certain embodiments,” these figures, and their corresponding descriptions are not intended to be mutually exclusive from other figures or descriptions, unless the context so indicates. Therefore, certain aspects from certain figures may be the same as certain features in other figures, and/or certain figures may be different representations or different portions of a particular exemplary embodiment.

It will be understood that, although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. Unless the context indicates otherwise, these terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section, for example as a naming convention. Thus, a first element, component, region, layer or section discussed below in one section of the specification could be termed a second element, component, region, layer or section in another section of the specification or in the claims without departing from the teachings of the present invention. In addition, in certain cases, even if a term is not described using “first,” “second,” etc., in the specification, it may still be referred to as “first” or “second” in a claim in order to distinguish different claimed elements from each other.

It will be understood that when an element is referred to as being “connected” or “coupled” to or “on” another element, it can be directly connected or coupled to or on the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, or as “contacting” or “in contact with” another element, there are no intervening elements present. Other words used to describe the relationship between elements should be interpreted in a like fashion (e.g., “between” versus “directly between,” “adjacent” versus “directly adjacent,” etc.).

Embodiments described herein will be described referring to plan views and/or cross-sectional views by way of ideal schematic views. Accordingly, the exemplary views may be modified depending on manufacturing technologies and/or tolerances. Therefore, the disclosed embodiments are not limited to those shown in the views, but include modifications in configuration formed on the basis of manufacturing processes. Therefore, regions exemplified in figures may have schematic properties, and shapes of regions shown in figures may exemplify specific shapes of regions of elements to which aspects of the invention are not limited.

Terms such as “same,” “equal,” “planar,” or “coplanar,” as used herein when referring to orientation, layout, location, shapes, sizes, amounts, or other measures do not necessarily mean an exactly identical orientation, layout, location, shape, size, amount, or other measure, but are intended to encompass nearly identical orientation, layout, location, shapes, sizes, amounts, or other measures within acceptable variations that may occur, for example, due to manufacturing processes. The term “substantially” may be used herein to emphasize this meaning, unless the context or other statements indicate otherwise. For example, items described as “substantially the same,” “substantially equal,” or “substantially planar,” may be exactly the same, equal, or planar, or may be the same, equal, or planar within acceptable variations that may occur, for example, due to manufacturing processes.

<figref idref="DRAWINGS">FIG. 1</figref> is a perspective view schematically illustrating a display panel having a light emitting device package according to an example embodiment.

With reference to <figref idref="DRAWINGS">FIG. 1</figref>, a display panel <b>1</b> may include a circuit board <b>20</b>, and a light emitting device module <b>10</b> arranged on the circuit board <b>20</b>.

The light emitting device module <b>10</b> according to an example embodiment may include a plurality of light emitting device packages <b>100</b> each selectively emitting light having a red (R) color, light having a green (G) color, and light having a blue (B) color. Each of the plurality of light emitting device packages <b>100</b> may configure a single pixel of a display panel, and the plurality of light emitting device packages <b>100</b> may be arranged on the circuit board <b>20</b> in rows and columns. In an example embodiment as illustrated in <figref idref="DRAWINGS">FIG. 1</figref>, a form in which 15×15 light emitting device packages <b>100</b> are arranged is exemplified for convenience of description, but a greater number of light emitting device packages (for example, 1024×768, 1920×1080) may be arranged according to required resolution.

A light emitting device package <b>100</b> may include a sub-pixel corresponding to RGB light sources, and sub-pixels may be provided to be spaced apart from each other, which will be described in detail with reference to <figref idref="DRAWINGS">FIGS. 3 to 6</figref>. A color of a sub-pixel is not limited to RGB, and CYMK (Cyan, Yellow, Magenta, and Black) light sources may be used.

According to an example embodiment, the circuit board <b>20</b> may include a driving unit configured to supply power to each light emitting device package <b>100</b> of the light emitting device module <b>10</b>, and a control unit for controlling the light emitting device package <b>100</b>.

As is traditional in the field of the inventive concepts, embodiments are described, and illustrated in the drawings, in terms of functional blocks, units and/or modules. Those skilled in the art will appreciate that these blocks, units and/or modules are physically implemented by electronic (or optical) circuits such as logic circuits, discrete components, microprocessors, hard-wired circuits, memory elements, wiring connections, and the like, which may be formed using semiconductor-based fabrication techniques or other manufacturing technologies. In the case of the blocks, units and/or modules being implemented by microprocessors or similar, they may be programmed using software (e.g., microcode) to perform various functions discussed herein and may optionally be driven by firmware and/or software. Alternatively, each block, unit and/or module may be implemented by dedicated hardware, or as a combination of dedicated hardware to perform some functions and a processor (e.g., one or more programmed microprocessors and associated circuitry) to perform other functions. Also, each block, unit and/or module of the embodiments may be physically separated into two or more interacting and discrete blocks, units and/or modules without departing from the scope of the inventive concepts. Further, the blocks, units and/or modules of the embodiments may be physically combined into more complex blocks, units and/or modules without departing from the scope of the inventive concepts.

The display panel <b>1</b> may further include a first molding part <b>11</b> disposed on the circuit board <b>20</b>. The first molding part <b>11</b> may be formed using a matrix such as a black matrix, and may also be referred to as a frame. For example, the black matrix may be disposed on a circumference of the circuit board to serve as a guideline for defining a region in which the light emitting device package <b>100</b> is mounted. The black matrix is not limited to being black, and matrices of other colors such as a white matrix, a green matrix, or the like may be used according to a use and a place of use, or the like, of a product. Moreover, a matrix of a transparent material may be used as needed. The white matrix may further include a light reflective material or a light scattering material. The black matrix may include at least one of a material such as a polymer including a resin, a ceramic, a semiconductor or a metal.

<figref idref="DRAWINGS">FIG. 2</figref> is an enlarged plan view illustrating the display panel illustrated in FIG. <b>1</b>, in detail, portion A of the light emitting device module <b>10</b>, and <figref idref="DRAWINGS">FIG. 3</figref> is an enlarged plan view illustrating the light emitting device package <b>100</b> of <figref idref="DRAWINGS">FIG. 2</figref>. <figref idref="DRAWINGS">FIG. 4</figref> is an exemplary side cross-sectional view taken along line I-I′ of <figref idref="DRAWINGS">FIG. 3</figref>.

With reference to <figref idref="DRAWINGS">FIG. 2</figref>, each of the plurality of light emitting device packages <b>100</b> may be disposed to be surrounded by a second molding part <b>51</b>, which may also be referred to as a frame. The second molding part <b>51</b> may be formed using a black matrix. While a region surrounded by the second molding part <b>51</b> is provided as a light-emitting region in which the light emitting device package <b>100</b> is disposed, an external region of the second molding part <b>51</b> may be a non-light-emitting region. The second molding part <b>51</b> allows each light emitting device package <b>100</b> to be electrically isolated, whereby each light emitting device package <b>100</b> may be driven independently from each other as a single pixel.

With reference to <figref idref="DRAWINGS">FIG. 3</figref>, each light emitting device package <b>100</b> forming a single pixel may include a first sub-pixel SP<b>1</b>, a second sub-pixel SP<b>2</b>, and a third sub-pixel SP<b>3</b>. The first sub-pixel SP<b>1</b>, the second sub-pixel SP<b>2</b>, and the third sub-pixel SP<b>3</b> may be disposed to be surrounded by a partition structure <b>111</b>. In an example embodiment as illustrated in <figref idref="DRAWINGS">FIG. 3</figref>, a form in which three sub-pixels are disposed on a single light emitting device package <b>100</b> is exemplified for convenience of description, but two or four sub-pixels may be disposed.

With reference to <figref idref="DRAWINGS">FIGS. 3 and 4</figref>, the light emitting device package <b>100</b> according to an example embodiment may include a cell array CA including a first semiconductor light-emitting unit LED<b>1</b>, a second semiconductor light-emitting unit LED<b>2</b>, and a third semiconductor light-emitting unit LED<b>3</b>, an insulating layer <b>150</b> covering the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b>, a metal support layer <b>160</b> supporting the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> while covering the insulating layer <b>150</b>, a first wavelength conversion unit <b>113</b>, a second wavelength conversion unit <b>114</b>, and a third wavelength conversion unit <b>115</b> disposed on the cell array CA, and the partition structure <b>111</b> disposed to isolate the first wavelength conversion unit <b>113</b>, the second wavelength conversion unit <b>114</b>, and the third wavelength conversion unit <b>115</b> from each other.

The cell array CA may include the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b>, and may have a first surface PL<b>1</b> (e.g., at a first vertical height) and a second surface PL<b>2</b> (e.g., at a second vertical height) opposing each other (e.g., the first surface PL<b>1</b> and the second surface PL<b>2</b> facing opposite directions). The first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> are disposed to be in contact with the first surface PL<b>1</b>, and the first wavelength conversion unit <b>113</b>, the second wavelength conversion unit <b>114</b>, and the third wavelength conversion unit <b>115</b> may be formed to be directly in contact with the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b>, respectively. Each individual one of the first to third semiconductor light emitting units LED<b>1</b> to LED<b>3</b> may also be referred to as semiconductor light emitting source.

The first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> may emit the same light or different light. For example, the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> may emit the same blue light (for example, light having wavelengths of 440 nm to 460 nm) or ultraviolet light (for example, light having wavelengths of 380 nm to 440 nm), or may emit red light, green light, and blue light, respectively. In an example embodiment, by way of example, the case in which the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> emit blue light is described.

Each of the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> may have a light emitting structure <b>120</b> on which a first conductivity-type semiconductor layer <b>121</b>, an active layer <b>122</b>, and a second conductivity-type semiconductor layer <b>123</b> are sequentially stacked.

The first conductivity-type semiconductor layer <b>121</b> and the second conductivity-type semiconductor layer <b>123</b> may be a p-type semiconductor layer and an n-type semiconductor layer, respectively. For example, the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer may be formed of a nitride semiconductor represented by an empirical formula Al_xIn_yGa_(1-x-y)N (where, 0≤x≤1, 0≤y≤1, 0≤x+y≤1), but is not limited thereto, and a GaAs-based semiconductor or a GaP-based semiconductor may be used. The active layer <b>122</b> may have a multiple quantum well (MQW) structure in which a quantum well layer and a quantum barrier layer are alternately stacked. For example, the active layer <b>122</b> may have a nitride-based MQW such as InGaN/GaN or GaN/AlGaN, but is not limited thereto, and a different semiconductor such as GaAs/AlGaAs, InGaP/GaP, or GaP/AlGaP may be used.

Active layers <b>122</b> of the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> may be configured to emit light having different wavelengths. Conditions of emitted light may be implemented in various methods. In an example embodiment, the active layers <b>122</b> of the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> may be configured to emit light having different colors, or may be configured to emit light having the same color. For example, the active layers <b>122</b> may emit red light, green light, and blue light, respectively, or may emit the same blue light or ultraviolet light.

The first conductivity-type semiconductor layer <b>121</b> and the second conductivity-type semiconductor layer <b>123</b> may be electrically connected to a first electrode <b>141</b> and a second electrode <b>142</b>, respectively. The first electrode <b>141</b> and the second electrode <b>142</b> may be disposed on mesa-etched regions of the first conductivity-type semiconductor layer <b>121</b> and the second conductivity-type semiconductor layer <b>123</b>, respectively. For example, the first electrode <b>141</b> may be formed using at least one of aluminum (Al), gold (Au), chromium (Cr), nickel (Ni), titanium (Ti), and tin (Sn), and the second electrode <b>142</b> may be formed using a reflective metal. For example, the second electrode <b>142</b> may be formed using a material such as silver (Ag), Ni, Al, Cr, rhodium (Rh), palladium (Pd), iridium (Ir), ruthenium (Ru), magnesium (Mg), zinc (Zn), platinum (Pt), Au or the like, and may have a monolayer structure or a multilayer structure.

Insulating mask layers <b>130</b> are disposed on the second surface PL<b>2</b> of the cell array CA to define regions in which the first electrode <b>141</b> and the second electrode <b>142</b> of the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> are individually disposed.

The insulating layer <b>150</b> may be disposed on a surface of each of the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> of the cell array CA. The insulating layer <b>150</b> may be disposed to cover a surface of each of the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> to electrically isolate light emitting structures <b>120</b> of the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> from each other. A first opening <b>151</b> and a second opening <b>152</b> may be disposed in one region of the insulating layer <b>150</b> to define regions in which the first electrode <b>141</b> and the second electrode <b>142</b> are individually connected. The first electrode <b>141</b> and the second electrode <b>142</b> may be connected to first regions <b>161</b><i>a</i>, <b>161</b><i>b</i>, and <b>161</b><i>c </i>as well as a second region <b>162</b>, of the metal support layer <b>160</b>, which will be described later, through the first opening <b>151</b> and the second opening <b>152</b>.

As illustrated in <figref idref="DRAWINGS">FIG. 5</figref>, the insulating layer <b>150</b> has a region disposed to be extended from an edge region <b>111</b><i>a </i>of the partition structure <b>111</b>, and a lateral surface of the insulating layer <b>150</b> may be disposed to be spaced apart from an outer lateral surface <b>111</b><i>c </i>of a substrate for growth having a plurality of light-emitting windows, for example, a first light-emitting window <b>112</b><i>a </i>corresponding to the first light-emitting unit LED<b>1</b>, a second light-emitting window <b>112</b><i>b </i>corresponding to the second light-emitting unit LED<b>2</b>, and a third light-emitting window <b>112</b><i>c </i>corresponding to the third light-emitting unit LED<b>3</b>, defined by the partition structure <b>111</b> by a predetermined width CD. In some exemplary embodiments, each semiconductor light-emitting unit (e.g., LED<b>1</b>, LED<b>2</b>, and LED<b>3</b> as illustrated in <figref idref="DRAWINGS">FIG. 4</figref>) corresponding to respective light-emitting window includes a first surface PL<b>1</b> at a first vertical height and a second surface PL<b>2</b> opposite the first surface PL<b>1</b> at a second vertical height. The first surface PL<b>1</b> of each semiconductor light-emitting unit contacts the substrate for growth.

The insulating layer <b>150</b> may be formed of a silicon oxide or a silicon nitride, for example, SiO₂, SiO_xN_y, Si_xN_yor the like. Such a material has relatively high light reflectivity, but does not have 100% light reflectivity. Thus, a phenomenon in which a portion of light emitted by the active layer <b>122</b>, incident through a surface of the insulating layer <b>150</b>, may occur. Light incident through the insulating layer <b>150</b> may be emitted by a region of the insulating layer <b>150</b>, exposed externally. Thus, in the case in which a region of the insulating layer <b>150</b> is exposed to a lateral surface of the light emitting device package <b>100</b>, light may be directly emitted externally without passing through the third wavelength conversion unit <b>115</b>. For example, when the light emitting device package <b>100</b> is viewed from a side, a light leakage defect, in which light of the active layer <b>122</b> whose wavelength is not converted, leaks, may occur. In the case in which the display panel <b>1</b> is manufactured using the light emitting device package <b>100</b> in which the light leakage defect occurs, when viewed obliquely from a front of the display panel <b>1</b>, a problem in which light whose wavelength has not been converted may be seen may occur. In an example embodiment, an edge portion of the insulating layer <b>150</b> may be disposed to be spaced apart from the outer lateral surface <b>111</b><i>c </i>of the edge region <b>111</b><i>a </i>of the partition structure <b>111</b> by a predetermined width CD, and may be covered by the metal support layer <b>160</b> to be described later. Thus, portions of light L<b>1</b> and L<b>2</b> emitted by the active layer <b>122</b> may be prevented from being emitted outside of the light emitting device package <b>100</b> to cause a light leakage defect. The predetermined width CD by which the insulating layer <b>150</b> is spaced apart from the outer lateral surface, may be prepared to be greater than a thickness of the metal support layer <b>160</b>, thereby providing sufficient space to allow the metal support layer <b>160</b> to cover an edge of the insulating layer <b>150</b>.

As illustrated in <figref idref="DRAWINGS">FIGS. 4 and 6</figref>, when a trench T having a depth ED greater than a thickness RD of the insulating layer <b>150</b> is formed on a surface of a middle region <b>111</b><i>b </i>of the partition structure <b>111</b> disposed between the light emitting structures <b>120</b> of the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b>, an optical path of the insulating layer <b>150</b> disposed on a surface of the light emitting structures <b>120</b> of the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> becomes long. Portions of light L<b>3</b> and L<b>4</b> emitted by a semiconductor light-emitting unit, the third semiconductor light-emitting unit LED<b>3</b>, may be prevented from flowing in a different semiconductor light-emitting unit adjacent thereto, the second semiconductor light-emitting unit LED<b>2</b>, to be color-mixed with portions of light L<b>5</b> and L<b>6</b> of the semiconductor light-emitting unit adjacent thereto, the second semiconductor light-emitting unit LED<b>2</b>. In detail, as the insulating layer <b>150</b> between the third semiconductor light-emitting unit LED<b>3</b> and the second semiconductor light-emitting unit LED<b>2</b> is disposed along an inner surface of the trench T, an optical path of portions of light L<b>4</b> and L<b>5</b> of light emitted by the active layer <b>122</b>, toward a semiconductor light-emitting unit adjacent thereto may be bent at two points, P<b>1</b> and P<b>2</b>. Thus, portions of light L<b>3</b> and L<b>4</b> emitted by the third semiconductor light-emitting unit LED<b>3</b> and portions of light L<b>5</b> and L<b>6</b> emitted by the second semiconductor light-emitting unit LED<b>2</b> may be blocked from each other.

The metal support layer <b>160</b> may cover a region including an edge region of the insulating layer <b>150</b>, and may be formed using a metallic material such as copper (Cu), Au, or Al, having high reflectivity and flexibility. Thus, the metal support layer <b>160</b> may prevent light from leaking through the insulating layer <b>150</b> to prevent a light leakage defect of a light emitting device package. In addition, the metal support layer may absorb an external force applied to the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> to mitigate damage to the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b>. In addition, the metal support layer may reflect light emitted by the active layer <b>122</b> in a direction of the first wavelength conversion unit <b>113</b> to further improve external light extraction efficiency of the light emitting device package <b>100</b>. The metal support layer <b>160</b> may be disposed to have a predetermined thickness not allowing light emitted by the insulating layer <b>150</b> to be transmitted therethrough. For example, the metal support layer <b>160</b> may have a thickness of about 100 nm or more.

As illustrated in <figref idref="DRAWINGS">FIGS. 3 and 4</figref>, the metal support layer <b>160</b> may include the plurality of first regions <b>161</b><i>a</i>, <b>161</b><i>b</i>, and <b>161</b><i>c </i>connected to first electrodes <b>141</b> through first openings <b>151</b> of the insulating layer <b>150</b>, and the second region <b>162</b> commonly connected to a plurality of second electrodes <b>142</b> through the second opening <b>152</b> of the insulating layer <b>150</b>. In an example embodiment, the second region <b>162</b> may be disposed to surround the plurality of first regions <b>161</b><i>a</i>, <b>161</b><i>b</i>, and <b>161</b><i>c</i>, and the plurality of first regions <b>161</b><i>a</i>, <b>161</b><i>b</i>, and <b>161</b><i>c </i>may be disposed to have the same area.

An interlayer insulating layer <b>170</b> may be disposed on the metal support layer <b>160</b> to define a region in which the metal support layer <b>160</b> is in contact with first pad parts <b>181</b><i>a</i>, <b>181</b><i>b</i>, and <b>181</b><i>c </i>as well as a second pad part <b>182</b> described later. The interlayer insulating layer <b>170</b> may be formed of the same material as that of the insulating layer <b>150</b>, but is not limited thereto. In the interlayer insulating layer <b>170</b>, first openings <b>171</b><i>a</i>, <b>171</b><i>b</i>, and <b>171</b><i>c </i>as well as a second opening <b>172</b> may be disposed therein to define a region in which the first regions <b>161</b><i>a</i>, <b>161</b><i>b</i>, and <b>161</b><i>c </i>as well as the second region <b>162</b> of the metal support layer <b>160</b> are in contact with the first pad parts <b>181</b><i>a</i>, <b>181</b><i>b</i>, and <b>181</b><i>c </i>as well as the second pad part <b>182</b>, respectively.

The first pad parts <b>181</b><i>a</i>, <b>181</b><i>b</i>, and <b>181</b><i>c </i>as well as the second pad part <b>182</b> may be disposed on the interlayer insulating layer <b>170</b>, and a passivation layer <b>190</b> covering the interlayer insulating layer <b>170</b>, the first pad parts <b>181</b><i>a</i>, <b>181</b><i>b</i>, and <b>181</b><i>c </i>as well as the second pad part <b>182</b> and having first openings <b>191</b><i>a</i>, <b>191</b><i>b</i>, and <b>191</b><i>c </i>as well as a second opening <b>192</b> may be disposed thereon. In an example embodiment, the passivation layer <b>190</b> may be formed using physical enhanced oxidation (PEOX). In addition, according to an example embodiment, the passivation layer <b>190</b> may include light reflective particles for reflecting light. For the light reflective particles, titanium dioxide (TiO₂) or aluminum oxide (Al₂O₃) may be used, but an example embodiment is not limited thereto.

The partition structure <b>111</b> in which the first wavelength conversion unit <b>113</b>, the second wavelength conversion unit <b>114</b>, and the third wavelength conversion unit <b>115</b> are disposed to be isolated from each other may be disposed on the first surface PL<b>1</b> of the cell array CA. The partition structure <b>111</b> as well as the first to third wavelength conversion units <b>113</b> to <b>115</b> may extend between the first surface PL<b>1</b> and a third surface PL<b>3</b> at a third vertical height. As such, the partition structure <b>111</b> and the first to third wavelength conversion units <b>113</b> to <b>115</b> may have a first surface at the first vertical height (e.g., the first surface PL<b>1</b>) and a second surface at the third vertical height (e.g., the third surface PL<b>3</b>).

The partition structure <b>111</b> may be disposed to be in contact with the first surface PL<b>1</b> of the cell array CA, and may have a first light-emitting window <b>112</b><i>a</i>, a second light-emitting window <b>112</b><i>b</i>, and a third light-emitting window <b>112</b><i>c </i>in positions corresponding to the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b>. The first light-emitting window <b>112</b><i>a</i>, the second light-emitting window <b>112</b><i>b</i>, and the third light-emitting window <b>112</b><i>c </i>may be provided as spaces for formation of the first wavelength conversion unit <b>113</b>, the second wavelength conversion unit <b>114</b>, and the third wavelength conversion unit <b>115</b>, respectively. The partition structure <b>111</b> may include a light blocking material allowing portions of light passing through the first wavelength conversion unit <b>113</b>, the second wavelength conversion unit <b>114</b>, and the third wavelength conversion unit <b>115</b> not to interfere with each other. In addition, the partition structure <b>111</b> may be formed by etching a wafer used as a substrate for growth for growing the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b>. The partition structure <b>111</b> may be disposed to surround a lateral surface of the first wavelength conversion unit <b>113</b>, the second wavelength conversion unit <b>114</b>, and the third wavelength conversion unit <b>115</b>, to isolate the first wavelength conversion unit <b>113</b>, the second wavelength conversion unit <b>114</b>, and the third wavelength conversion unit <b>115</b> from each other.

The first wavelength conversion unit <b>113</b>, the second wavelength conversion unit <b>114</b>, and the third wavelength conversion unit <b>115</b> may convert light emitted by the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> into light having different colors by adjustment. In an example embodiment, the first wavelength conversion unit <b>113</b>, the second wavelength conversion unit <b>114</b>, and the third wavelength conversion unit <b>115</b> may be configured to provide red light, blue light, and green light, respectively. The wavelength conversion units (e.g., LED<b>1</b>, LED<b>2</b>, LED<b>3</b>) described herein are also referred to as wavelength conversion pillars (e.g., first, second, third, etc., pillars), or wavelength conversion layers (e.g., first, second, third, etc., layers).

In an example embodiment, when the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> emit blue light, the first wavelength conversion unit <b>113</b> and the third wavelength conversion unit <b>115</b> may include a red phosphor and a green phosphor, respectively. The first wavelength conversion unit <b>113</b> and the third wavelength conversion unit <b>115</b> may be formed by dispensing a light-transmitting liquid resin, with which a wavelength conversion material such as a red phosphor or a green phosphor is mixed, into the first light-emitting window <b>112</b><i>a </i>and the third light-emitting window <b>112</b><i>c</i>, but may be formed in various different processes. For example, the first wavelength conversion unit and the third wavelength conversion unit may be provided as a wavelength conversion film.

As required, the first wavelength conversion unit <b>113</b> and the third wavelength conversion unit <b>115</b> may further include optical filter layers <b>113</b><i>b </i>and <b>115</b><i>b </i>for selectively blocking blue light, respectively. By using the optical filter layers <b>113</b><i>b </i>and <b>115</b><i>b</i>, the first light-emitting window <b>112</b><i>a </i>and the third light-emitting window <b>112</b><i>c </i>may provide only desired red light and green light.

In an example embodiment, when the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> emit blue light, the second wavelength conversion unit <b>114</b> may not include a phosphor. Thus, the second wavelength conversion unit <b>114</b> may provide blue light the same as blue light emitted by the first semiconductor light-emitting unit LED<b>1</b>.

The second wavelength conversion unit <b>114</b> may be formed by dispensing a light-transmitting liquid resin with which a phosphor is not mixed. However, according to an example embodiment, the second wavelength conversion unit <b>114</b> may include a blue or blue green (for example, 480 nm to 520 nm) phosphor for adjusting color coordinates of blue light. The phosphor is adopted for a purpose for adjusting color coordinates of blue light which may be provided by the second wavelength conversion unit <b>114</b>. Thus, a smaller amount of a phosphor may be mixed, as compared to an amount of a phosphor mixed with the first wavelength conversion unit <b>113</b> and the third wavelength conversion unit <b>115</b> for conversion of a color of light.

In an example embodiment, a display device including a display panel having a circuit board and a plurality of light emitting device packages disposed on the circuit board in rows and columns, a panel driving unit for driving the display panel, and a control unit for controlling the panel driving unit, may be provided. A light emitting device package includes a plurality of light emitting structures, each of the plurality of light emitting structures having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and may include a cell array having a first surface and a second surface positioned in the opposite side to the first surface, a plurality of wavelength conversion units disposed to correspond to the plurality of light emitting structure, respectively, on the first surface of the cell array, and configured to provide light having a wavelength different from light emitted by the plurality of light emitting structures, a partition structure surrounding the plurality of wavelength conversion units to isolate the plurality of wavelength conversion units from each other, an insulating layer extended to the first surface from the second surface to divide the light-emitting structure into the plurality of light-emitting regions, and disposed to be spaced apart from an outer lateral surface of the partition structure by a predetermined width, and a metal support layer covering a region including an edge of the insulating layer.

Also, according to these exemplary embodiments, a light emitting device package includes a cell array, including a plurality of semiconductor light-emitting units, each semiconductor light-emitting unit having a first surface at a first vertical height and a second surface opposite the first surface at a second vertical height, and each semiconductor light emitting unit including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other. The light emitting device package further includes a plurality of wavelength conversion units disposed respectively on the plurality of semiconductor light-emitting units, each wavelength conversion unit having a first surface at the first vertical height and a second surface at a third vertical height, wherein the first vertical height is between the second vertical height and the third vertical height, each wavelength conversion unit is configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light. The light emitting device package further includes a metal support layer disposed on at least one surface of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth and an insulating layer disposed between the plurality of semiconductor light-emitting units and the metal support layer. The light emitting device package further includes a partition structure disposed in a space between the plurality of wavelength conversion units so as to separate the plurality of wavelength conversion units from each other, the partition structure extending between the first vertical height and the third vertical height.

A method of manufacturing a light emitting device package according to an example embodiment will be described.

<figref idref="DRAWINGS">FIGS. 7A to 14B</figref> are side cross-sectional views schematically illustrating a main manufacturing process of a light emitting device package. In detail, a method of manufacturing the light emitting device package may be a method of manufacturing a wafer level chip scale package. Hereafter, the main manufacturing process is illustrated based on a single light emitting device package in a portion of a chip scale packaging process for easier understanding.

With reference to <figref idref="DRAWINGS">FIGS. 7A and 7B</figref>, a process of manufacturing a light emitting device package may be initiated by a step of forming the light emitting structure <b>120</b> including the first conductivity-type semiconductor layer <b>121</b>, the active layer <b>122</b>, and the second conductivity-type semiconductor layer <b>123</b> on a substrate for growth <b>110</b> and mesa-etching a region of the light emitting structure <b>120</b>.

The substrate for growth <b>110</b> may be an insulative, conductive, or semiconductive substrate as required. The substrate for growth <b>110</b> may be, for example, a semiconductor substrate for formation of the light emitting structure <b>120</b> in one surface. The first conductivity-type semiconductor layer <b>121</b> may be, for example, an n-type nitride semiconductor represented by an empirical formula In_xAl_yGa_1-x-yN (where 0≤x&lt;1, 0≤y&lt;1, and 0≤x+y&lt;1), and an n-type impurity may be, for example, silicon (Si), germanium (Ge), selenium (Se), tellurium (Te) or the like. In addition, the active layer <b>122</b> may have a multiple quantum well (MQW) structure in which a quantum well layer and a quantum barrier layer are alternately stacked. For example, the quantum well layer and the quantum barrier layer may have different compositions represented by the empirical formula In_xAl_yGa_1-x-yN (where 0≤x≤1, 0≤y≤1, and 0≤x+y≤1). In a specific example, the quantum well layer may be represented by the empirical formula In_xGa_1-xN (where 0&lt;x≤1), and the quantum barrier layer may be GaN or AlGaN. The second conductivity-type semiconductor layer <b>123</b> may be a p-type nitride semiconductor represented by an empirical formula In_xAl_yGa_1-x-yN (where 0≤x&lt;1, 0≤y&lt;1, and 0≤x+y&lt;1), and a p-type impurity may be Mg, zinc (Zn), beryllium (Be) or the like.

To expose a region of the first conductivity-type semiconductor layer <b>121</b>, the light emitting structure <b>120</b> may be mesa-etched. Such an etching process may be performed as a process of removing a region of the second conductivity-type semiconductor layer <b>123</b> and the active layer <b>122</b> to form mesa-etched regions <b>124</b> and <b>125</b>. As illustrated in <figref idref="DRAWINGS">FIGS. 8A and 8B</figref>, after the first electrode <b>141</b>, the second electrode <b>142</b>, and Insulating mask layers <b>130</b> are individually disposed on a plurality of light emitting structures <b>120</b>, an isolation process of isolating the light emitting structure into a plurality of light-emitting regions, the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b>, may be performed.

Isolation regions ISOa and ISOb may be formed to pass through the light emitting structure <b>120</b> to expose a surface of the substrate for growth <b>110</b>. In a process described above, the light emitting structure <b>120</b> may be isolated into the plurality of light-emitting regions to be supported by the substrate for growth <b>110</b>.

An isolation region may include a device isolation region ISOa, a region in which a discrete semiconductor light emitting device package is isolated, and a sub-isolation region ISOb in which a plurality of light-emitting regions are isolated. The device isolation region ISOa may be formed for each of three light-emitting regions, the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b>, and the sub-isolation region ISOb may be formed between the three light-emitting regions, the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b>. Such an isolation process may be performed in a process of isolating and forming the light emitting structure <b>120</b> using a cutting blade, but is not limited thereto. The sub-isolation region ISOb may be formed in a separate process from a process of forming the device isolation region ISOa, but may be formed in the same process as a process of forming the device isolation region ISOa. The sub-isolation region ISOb may have a width narrower than that of the device isolation region ISOa. In addition, in a process described above, a surface of the substrate for growth <b>110</b>, exposed to the device isolation region ISOa and the sub-isolation region ISOb is removed to form the trench T. A depth ED of the trench T may be greater than a thickness of the insulating layer <b>150</b> stacked in a subsequent process.

With reference to <figref idref="DRAWINGS">FIGS. 9A and 9B</figref>, the insulating layer <b>150</b> may be disposed to cover a surface of the light emitting structure <b>120</b> and the substrate for growth <b>110</b>. In the insulating layer <b>150</b>, the first opening <b>151</b> and the second opening <b>152</b> to which the first electrode <b>141</b> and the second electrode <b>142</b> are exposed, respectively, may be formed. For example, the thickness RD of the insulating layer <b>150</b> which is deposited is less than the depth ED of the trench T, whereby light emitted by a single light emitting structure may be prevented from being incident into a different light emitting structure adjacent thereto to be color-mixed. In addition, the insulating layer <b>150</b> deposited on the device isolation region ISOa is removed by a predetermined width RA to define a region in which the metal support layer <b>160</b> covers the insulating layer <b>150</b> in a subsequent process.

With reference to <figref idref="DRAWINGS">FIGS. 10A and 10B</figref>, the metal support layer <b>160</b> may be deposited to cover a region including an edge of the insulating layer <b>150</b>. The metal support layer <b>160</b> may include the plurality of first regions <b>161</b><i>a</i>, <b>161</b><i>b</i>, and <b>161</b><i>c </i>individually connected to a plurality of first electrodes <b>141</b> individually disposed on the plurality of light emitting structures, and a second region <b>162</b> disposed to be spaced apart from the plurality of first regions <b>161</b><i>a</i>, <b>161</b><i>b</i>, and <b>161</b><i>c </i>and commonly connected to a plurality of second electrodes <b>142</b> individually disposed on the plurality of light emitting structures. The plurality of first regions <b>161</b><i>a</i>, <b>161</b><i>b</i>, and <b>161</b><i>c </i>may be disposed to be spaced apart from each other inside the second region <b>162</b>. The metal support layer <b>160</b> may be disposed to cover a region including an edge of the insulating layer <b>150</b> to block light leaking through the insulating layer <b>150</b>. In an example embodiment, the second region <b>162</b> may be disposed to cover a region including an edge of the insulating layer <b>150</b>. The metal support layer <b>160</b> may be formed of a metallic material such as Cu, Au, or Al, having high reflectivity and flexibility. Thus, the metal support layer <b>160</b> may block light leaking from the insulating layer <b>150</b>, and may mitigate stress applied to a light emitting structure in a manufacturing process. In addition, the metal support layer <b>160</b> may reflect light emitted by the active layer <b>122</b> to change an optical path in a direction of a wavelength conversion unit to be described later. Thus, external light extraction efficiency of the light emitting device package <b>100</b> may be improved.

With reference to <figref idref="DRAWINGS">FIGS. 11A and 11B</figref>, the interlayer insulating layer <b>170</b> having the first openings <b>171</b><i>a</i>, <b>171</b><i>b</i>, and <b>171</b><i>c </i>as well as the second opening <b>172</b> exposing the plurality of first regions <b>161</b><i>a</i>, <b>161</b><i>b</i>, and <b>161</b><i>c </i>as well as the second region <b>162</b> of the metal support layer <b>160</b>, respectively, may be deposited. The interlayer insulating layer <b>170</b> may define a region in which a pad electrode formed in a subsequent process is disposed.

With reference to <figref idref="DRAWINGS">FIGS. 12A and 12B</figref>, the first pad parts <b>181</b><i>a</i>, <b>181</b><i>b</i>, and <b>181</b><i>c </i>as well as the second pad part <b>182</b> connected to the first openings <b>171</b><i>a</i>, <b>171</b><i>b</i>, and <b>171</b><i>c </i>as well as the second opening <b>172</b> of the interlayer insulating layer <b>170</b>, respectively, may be deposited.

With reference to <figref idref="DRAWINGS">FIGS. 13A and 13B</figref>, the passivation layer <b>190</b> covering the interlayer insulating layer <b>170</b>, the first pad parts <b>181</b><i>a</i>, <b>181</b><i>b</i>, and <b>181</b><i>c </i>as well as the second pad part <b>182</b>, and having the first openings <b>191</b><i>a</i>, <b>191</b><i>b</i>, and <b>191</b><i>c </i>as well as the second opening <b>192</b> defining a region in which an under bump metallurgy (UBM) layer is deposited, and UBM layers <b>185</b><i>a</i>, <b>185</b><i>b</i>, <b>185</b><i>c</i>, and <b>185</b><i>d </i>may be deposited inside the first openings <b>191</b><i>a</i>, <b>191</b><i>b</i>, and <b>191</b><i>c </i>as well as the second opening <b>192</b>.

With reference to <figref idref="DRAWINGS">FIGS. 14A and 14B</figref>, a region of the substrate for growth <b>110</b> corresponding to each of the first semiconductor light-emitting unit LED<b>1</b>, the second semiconductor light-emitting unit LED<b>2</b>, and the third semiconductor light-emitting unit LED<b>3</b> is etched to form to each of the first light-emitting window <b>112</b><i>a</i>, the second light-emitting window <b>112</b><i>b</i>, and the third light-emitting window <b>112</b><i>c </i>

A light-transmitting liquid resin mixed with a wavelength conversion material is individually dispensed into the first light-emitting window <b>112</b><i>a</i>, the second light-emitting window <b>112</b><i>b</i>, and the third light-emitting window <b>112</b><i>c </i>to form the first wavelength conversion unit <b>113</b>, the second wavelength conversion unit <b>114</b>, and the third wavelength conversion unit <b>115</b> to be cut into discrete semiconductor light-emitting device units using a cutting blade. Thus, the light emitting device package <b>100</b> illustrated in <figref idref="DRAWINGS">FIGS. 3 and 4</figref> may be manufactured.

As set forth above, according to example embodiments of the present inventive concept, an insulating layer in which a light-leakage phenomenon may occur is covered with a metal support layer, thereby providing a light emitting device package in which a light-leakage phenomenon does not occur and a display device using the same.

While example embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations could be made without departing from the scope of the present disclosure as defined by the appended claims.