IC structure integrity sensor having interdigitated conductive elements

BACKGROUND

0001The present disclosure relates to semiconductor fabrication, and more specifically, to a sensor for an integrated circuit (IC) structure for moisture and chip integrity monitoring having interdigitated conductive elements.

0002During semiconductor fabrication and during IC packaging, monitoring of chip package integrity is an important part of the process. IC chips are formed on a semiconductor wafer and separated into individual chips by cutting that can damage the chips. Any moisture or cracks/defects in an IC structure can lead to chip failures and/or performance degradation. Typically, a sensor including conductive perimeter lines (e.g., 2 perimeter lines) are provided around a periphery of a chip to monitor chip integrity. In use, the conductive perimeter lines can be used to measure changes in leakage that indicate the presence of moisture, and/or changes in resistance that indicate the presence of cracks or other physical defects. As current technology continues to scale to smaller dimensions, e.g., 22 nm and beyond, the sensor dimensions also are reduced, resulting in increased resistance thereof. With advancing minimum ground rule dimensions, the very long perimeter lines are becoming too high in resistance to be useful. To address this issue, the perimeter lines are being made wider, which also requires wider spacing that makes the measurements of leakage less sensitive.

SUMMARY

0003A first aspect of the disclosure is directed to a sensor for an integrated circuit (IC) structure, the sensor comprising: a sensor layer in a layer of the IC structure, the sensor layer including: a first conductive structure disposed proximate a perimeter of the IC structure; a second conductive structure disposed parallel to the first conductive structure and proximate the perimeter of the IC structure; and a set of interdigitating conductive elements including a first plurality of conductive elements electrically coupled to the first conductive structure interdigitating with a second plurality of conductive elements electrically coupled to the second conductive structure.

0004A second aspect of the disclosure includes a sensor for an integrated circuit (IC) structure, the sensor comprising: a sensor layer in a layer of the IC structure, the sensor layer including: a first conductive comb structure disposed proximate a perimeter of the IC structure and having a first conductive spine and a first plurality of conductive elements electrically coupled to the first conductive spine; and a second conductive comb structure disposed proximate the perimeter of the IC structure and having a second conductive spine and a second plurality of conductive elements electrically coupled to the second conductive spine, wherein the first plurality of conductive elements interdigitate with the second plurality of conductive elements.

0005A third aspect of the disclosure related to a sensor for an integrated circuit (IC) structure, the sensor comprising: a sensor layer in a layer of the IC structure, the sensor layer including: a first conductive structure disposed proximate a perimeter of the IC structure; a second conductive structure disposed parallel to the first conductive structure and proximate the perimeter of the IC structure; and a set of interdigitating conductive elements including a first plurality of conductive elements electrically coupled to the first conductive structure interdigitating with a second plurality of conductive elements electrically coupled to the second conductive structure, wherein the first conductive structure and the second conductive structure are each individually wider than any conductive element in the set of interdigitated conductive elements, and a spacing between adjacent interdigitated conductive elements is no greater than a width of each individual conductive element.

0006The foregoing and other features of the disclosure will be apparent from the following more particular description of embodiments of the disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

0007The embodiments of this disclosure will be described in detail, with reference to the following figures, wherein like designations denote like elements, and wherein:

0008<figref idref="DRAWINGS">FIG. 1</figref> shows a top view of a sensor for an IC structure according to embodiments of the disclosure.

0009<figref idref="DRAWINGS">FIG. 2</figref> shows an enlarged top view of the sensor as noted in <figref idref="DRAWINGS">FIG. 1</figref> according to embodiments of the disclosure.

0010<figref idref="DRAWINGS">FIG. 3</figref> shows an enlarged top view of the sensor as noted in <figref idref="DRAWINGS">FIG. 1</figref> according to embodiments of the disclosure.

0011<figref idref="DRAWINGS">FIG. 4</figref> shows an enlarged top view of the sensor as noted in <figref idref="DRAWINGS">FIG. 1</figref> according to embodiments of the disclosure.

0012<figref idref="DRAWINGS">FIG. 5</figref> shows an enlarged top view of a corner of the sensor as noted in <figref idref="DRAWINGS">FIG. 1</figref> according to embodiments of the disclosure.

0013<figref idref="DRAWINGS">FIGS. 6 and 7</figref> show enlarged top views of two different sensor layers.

0014<figref idref="DRAWINGS">FIG. 8</figref> shows an enlarged top view of the interposed different sensor layers of <figref idref="DRAWINGS">FIGS. 6 and 7</figref>.

0015<figref idref="DRAWINGS">FIG. 9</figref> shows an enlarged top view of the sensor as noted in <figref idref="DRAWINGS">FIG. 1</figref> including vias according to embodiments of the disclosure.

0016<figref idref="DRAWINGS">FIG. 10</figref> shows an enlarged top view of the sensor as noted in <figref idref="DRAWINGS">FIG. 1</figref> including vias according to embodiments of the disclosure.

0017<figref idref="DRAWINGS">FIG. 11</figref> shows a top view of a sensor for an IC structure according to another embodiment of the disclosure.

0018<figref idref="DRAWINGS">FIG. 12</figref> shows an enlarged top view of the sensor as noted in <figref idref="DRAWINGS">FIG. 11</figref> according to embodiments of the disclosure.

0019It is noted that the drawings of the disclosure are not to scale. The drawings are intended to depict only typical aspects of the disclosure, and therefore should not be considered as limiting the scope of the disclosure. In the drawings, like numbering represents like elements between the drawings.

DETAILED DESCRIPTION

0020A sensor for an integrated circuit (IC) structure is disclosed. The sensor can be used to monitor leakage and/or moisture in an IC structure. “IC structure” as used herein may include circuitry in or on a semiconductor and provided as a complete IC, IC chip or a partial (IC) such as a test site. The sensor includes a sensor layer in a layer of the IC structure. The sensor layer may include a first conductive structure disposed proximate a perimeter of the IC structure, and a second conductive structure disposed parallel to the first conductive structure and proximate the perimeter of the IC structure. In contrast to conventional systems, the sensor also includes a set of interdigitating conductive elements including a first plurality of conductive elements electrically coupled to the first conductive structure interdigitating with a second plurality of conductive elements electrically coupled to the second conductive structure. Each conductive structure can take the form of a conductive spine, which along with respective plurality of conductive elements electrically coupled thereto, can form a conductive comb structure.

0021Referring to <figref idref="DRAWINGS">FIG. 1</figref>, a top view of a sensor <b>100</b> for an IC structure <b>102</b> is illustrated. As understood, IC structure <b>102</b> (phantom box) includes layers <b>104</b>, stacked vertically into the page of <figref idref="DRAWINGS">FIG. 1</figref>, that include any of a large variety of devices, e.g., transistors, resistors, capacitors, etc., and various insulating layers including conductive interconnects connecting the devices extending therethrough. <figref idref="DRAWINGS">FIG. 1</figref> shows a top view of one of layers <b>104</b> of IC structure <b>102</b>. Sensor <b>100</b> includes one or more sensor layer(s) <b>106</b> that each include conductive features, described herein, near a perimeter <b>108</b> of IC structure <b>102</b> in a layer(s) <b>104</b> of IC structure <b>102</b>. Sensor layers <b>106</b> can be provided in a number of layers <b>104</b> of IC structure <b>102</b>, and multiple sensor layers <b>106</b> may be vertically interconnected as will be described herein using vias.

0022Referring to <figref idref="DRAWINGS">FIG. 2</figref>, which shows an enlarged view of a section of sensor <b>100</b> from <figref idref="DRAWINGS">FIG. 1</figref>, each sensor layer <b>106</b> may include a first conductive structure <b>110</b> disposed proximate perimeter <b>108</b> of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>), and a second conductive structure <b>112</b> disposed parallel to first conductive structure <b>110</b> and proximate perimeter <b>108</b> of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>). Sensor <b>100</b> also includes a set of interdigitating conductive elements <b>120</b> (within phantom box) electrically coupled to conductive structures <b>110</b>, <b>112</b>. Set of interdigitating conductive elements <b>120</b> may include a first plurality of conductive elements <b>122</b> electrically coupled to first conductive structure <b>110</b> interdigitating with a second plurality of conductive elements <b>124</b> electrically coupled to second conductive structure <b>112</b>. As illustrated, first conductive structure <b>110</b> and first plurality of conductive elements <b>122</b> are configured in a comb arrangement, and second conductive structure <b>112</b> and second plurality of conductive elements <b>124</b> are configured in a comb arrangement. In this light, a first conductive comb structure <b>130</b> (phantom box) is disposed proximate perimeter <b>108</b> of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>) and has a first conductive spine <b>132</b> (conductive structure <b>110</b>) and first plurality of conductive elements <b>122</b> electrically coupled to first conductive spine <b>132</b>. Similarly, a second conductive comb structure <b>134</b> (phantom box) is disposed proximate perimeter <b>108</b> of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>) and has a second conductive spine <b>136</b> (conductive structure <b>112</b>) and second plurality of conductive elements <b>134</b> electrically coupled to second conductive spine <b>136</b>. First plurality of conductive elements <b>122</b> interdigitate with second plurality of conductive elements <b>124</b>, i.e., they mesh like the fingers of two clasped hands (but they do not interlock).

0023As shown in <figref idref="DRAWINGS">FIG. 1</figref>, sensor <b>100</b> may also include a terminal <b>140</b> coupled to each end of first and second conductive structures <b>110</b>, <b>112</b>, e.g., in each sensor layer <b>106</b> at which measurement is desired. Conductive structures <b>110</b>, <b>112</b>, and set of interdigitating conductive elements <b>120</b> may be formed in layer(s) <b>104</b> of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>) using any now known or later developed semiconductor fabrication process appropriate for the particular dimensions of sensor layer <b>106</b>, e.g., electroplating; or dielectric layer photolithographic patterning, etching, conductor deposition and planarization, etc. While terms such as “elements” and “structures” have been used herein to differentiate features of sensor <b>100</b>, the features will typically include the same conductive material, e.g., copper, aluminum, etc., and depending on layer <b>104</b> of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>) in which the features are used, they may be positioned within any appropriate dielectric material of IC structure <b>102</b>, e.g., silicon oxide, low-k dielectric, etc.

0024In the embodiments shown, first plurality of conductive elements <b>122</b> extend perpendicularly from first conductive structure <b>110</b> and second plurality of conductive elements <b>124</b> extend perpendicularly from second conductive structure <b>112</b>. Although not shown, it will be appreciated that conductive elements <b>122</b>, <b>124</b> may extend in parallel fashion at an angle other than perpendicular from respective conductive structures <b>110</b>, <b>112</b>. In any event, first conductive structure <b>110</b> (spine <b>132</b>) and second conductive structure <b>112</b> (spine <b>134</b>) may be each individually wider than any conductive element <b>122</b>, <b>124</b> in set of interdigitated conductive elements <b>120</b>. Further, as shown in the enlarged top view of <figref idref="DRAWINGS">FIG. 3</figref> for clarity, in one embodiment, a spacing S between adjacent interdigitated conductive elements <b>122</b>, <b>124</b> is no greater than a width W of each individual conductive element <b>122</b>, <b>124</b>.

0025As shown in <figref idref="DRAWINGS">FIG. 3</figref>, in one embodiment, set of interdigitating conductive elements <b>120</b> (<figref idref="DRAWINGS">FIG. 2</figref>) may include a plurality of sets of interdigitating conductive elements <b>120</b>A, <b>120</b>B, <b>120</b>C, etc. (shown with phantom boxes). In this example, at least two of the plurality of sets <b>120</b>A, <b>120</b>B, <b>120</b>C of interdigitating conductive elements have at least one of: different sized conductive elements, different spacing between conductive elements and different density of conductive elements. In <figref idref="DRAWINGS">FIG. 3</figref>, each set <b>120</b>A, <b>120</b>B, <b>120</b>C has different sized conductive elements, i.e., with different widths W. Each set also has different conductive element spacing S, and different density of conductive elements. Through selection of different sizes, spaces, density, etc. sets of interdigitating conductive elements <b>120</b>A, B, C within a particular sensor <b>100</b>, the sensor can be highly customized for a particular application.

0026In <figref idref="DRAWINGS">FIGS. 2 and 3</figref>, conductive elements <b>122</b>, <b>124</b> extend perpendicular to conductive structures <b>110</b>, <b>112</b> (spines <b>132</b>, <b>136</b>). <figref idref="DRAWINGS">FIG. 4</figref> shows an enlarged top view of sensor <b>100</b> according to another embodiment in which a first intermediate conductive member <b>150</b> extends perpendicularly from and is electrically coupled to first conductive structure <b>110</b>. Here, first plurality of conductive elements <b>122</b> extend perpendicularly from first intermediate conductive structure <b>150</b> (in example, 2 shown) such that they are parallel to conductive structure <b>110</b> (spine <b>132</b>). Similarly, a second intermediate conductive member <b>152</b> (in example, 1 shown) extends perpendicularly from and is electrically coupled to second conductive structure <b>112</b>. And, second plurality of conductive elements <b>124</b> extends perpendicularly from second intermediate conductive structure <b>152</b> such that they are parallel to conductive structure <b>112</b> (spine <b>136</b>). First and second plurality of conductive elements <b>122</b>, <b>124</b> are also interdigitated. Here, two sets of interdigitated conductive elements <b>120</b>D, <b>120</b>E (phantom boxes) are created. Sets of interdigitating conductive elements <b>120</b>D, <b>120</b>E may also have different sizes, spaces, density, etc., and may be used with other sets <b>120</b>A-C (<figref idref="DRAWINGS">FIG. 3</figref>), as described herein, to create highly customized sensors for particular applications. That is, the <figref idref="DRAWINGS">FIGS. 2, 3 and 4</figref> embodiments may be used together within a single sensor layer <b>106</b> (<figref idref="DRAWINGS">FIG. 1</figref>) as shown in one example in <figref idref="DRAWINGS">FIGS. 6 and 7</figref> (<figref idref="DRAWINGS">FIGS. 2 and 4</figref> embodiments shown together).

0027<figref idref="DRAWINGS">FIG. 5</figref> shows an enlarged top view of a corner <b>160</b> of sensor <b>100</b> as noted in <figref idref="DRAWINGS">FIG. 1</figref> according to embodiments of the disclosure. As illustrated, sets of interdigitating conductive elements <b>120</b>F-K may also be applied to corner <b>160</b>. Sensor <b>100</b> may include any number of corners <b>160</b> depending on IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>) layout, and may be outwardly projecting or inwardly projecting. In any event, corner <b>160</b> may include first and second conductive structures <b>110</b>, <b>112</b> (spine <b>132</b>, <b>136</b>) at a corresponding corner of the IC structure stepped in such a fashion as to create a plurality of parallel sections <b>162</b> between first and second conductive structures <b>110</b>, <b>122</b> (some run horizontally on page and some run vertically on page). At least one of plurality of parallel sections <b>162</b> includes at least a portion of a set of interdigitating conductive elements <b>120</b>F-K (6 as shown). While sets of interdigitating conductive elements <b>120</b>F-K have been shown employing the <figref idref="DRAWINGS">FIG. 2</figref> arrangement, it is emphasized that any embodiment(s) of interdigitating conductive elements described herein may be employed in corner <b>160</b>. Further, while each parallel section <b>162</b> has been shown to include a respective set of interdigitating conductive elements <b>120</b>F-K, it is emphasized that one or more parallel sections <b>162</b> may be devoid of interdigitating conductive elements. While parallel sections <b>162</b> have been shown as perpendicular, they may be set at other angles, so long as the end parallel sections <b>162</b>E mate with the otherwise parallel conductive structures <b>110</b>, <b>112</b> extending along perimeter <b>108</b>.

0028<figref idref="DRAWINGS">FIGS. 2-5</figref> show interdigitating conductive element arrangements within a single sensor layer <b>106</b> (<figref idref="DRAWINGS">FIG. 1</figref>). As noted, sensor <b>100</b> however can extend between layers <b>104</b> (<figref idref="DRAWINGS">FIG. 1</figref>) of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>). Each sensor layer <b>106</b> can be identical to other sensor layer(s) <b>106</b>, i.e., have the same arrangement of conductive structures and sets of interdigitating conductive elements. In another embodiment however two or more sensor layers <b>106</b> may have different arrangements. <figref idref="DRAWINGS">FIGS. 6 and 7</figref> show enlarged top views of two different sensor layers <b>106</b>A, <b>106</b>B. Here, as shown in <figref idref="DRAWINGS">FIG. 6</figref>, a first sensor layer <b>106</b>A within a first layer <b>104</b>A of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>) may include a first set of interdigitating conductive elements (actually two sets shown: <b>172</b> and <b>174</b>) having a first arrangement. In the <figref idref="DRAWINGS">FIG. 6</figref> example, first sensor layer <b>106</b>A uses a set of conductive elements <b>172</b> similar to those in <figref idref="DRAWINGS">FIG. 2 or 3</figref>, and a set of conductive elements <b>174</b> similar to those in <figref idref="DRAWINGS">FIG. 4</figref> to the left of set <b>172</b>. As shown in <figref idref="DRAWINGS">FIG. 7</figref>, a second sensor layer <b>106</b>B within a second layer <b>104</b>B of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>) different than the first layer (above or below in <figref idref="DRAWINGS">FIG. 1</figref>) may have a different arrangement of conductive elements. That is, second sensor layer <b>106</b>B includes a second set of interdigitating conductive elements (actually two sets <b>176</b>, <b>178</b> shown) having a second arrangement different than the first arrangement of <figref idref="DRAWINGS">FIG. 6</figref>. In the <figref idref="DRAWINGS">FIG. 7</figref> example, second sensor layer <b>106</b>B uses set of conductive elements <b>176</b> similar to those in <figref idref="DRAWINGS">FIG. 2 or 3</figref>, and set of conductive elements <b>178</b> similar to those in <figref idref="DRAWINGS">FIG. 4</figref> to the left of set <b>178</b>.

0029<figref idref="DRAWINGS">FIG. 8</figref> shows an enlarged top view of the interposed different sensor layers <b>106</b>A, <b>106</b>B of <figref idref="DRAWINGS">FIGS. 6 and 7</figref>. Here, first sensor layer <b>106</b>A is within a first layer <b>104</b>A (<figref idref="DRAWINGS">FIG. 6</figref>) of IC structure <b>102</b>, and second sensor layer <b>106</b>B is within a second layer <b>104</b>B (<figref idref="DRAWINGS">FIG. 7</figref>) of IC structure <b>102</b> different than the first layer (below as shown). Each sensor layer <b>106</b>A, <b>106</b>B may be coupled to at least one other sensor layer using any appropriate via. That is, first sensor layer <b>106</b>A in first layer <b>104</b>A (<figref idref="DRAWINGS">FIG. 6</figref>) of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>) is electrically coupled by a via <b>180</b> and/or <b>182</b> to second sensor layer <b>106</b>B in second layer <b>104</b>B (<figref idref="DRAWINGS">FIG. 7</figref>) of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>) different than first layer <b>104</b>A (<figref idref="DRAWINGS">FIG. 6</figref>) of the IC structure. As shown in the example of <figref idref="DRAWINGS">FIG. 8</figref>, at least one via <b>180</b> may couple conductive structures <b>110</b>, <b>110</b> of each layer <b>106</b>A, <b>106</b>B. Alternatively, or in addition thereto, as also shown in <figref idref="DRAWINGS">FIG. 8</figref>, a conductive element (of set <b>174</b>) in first sensor layer <b>106</b>A may be electrically coupled to a conductive element (of set <b>176</b>) in second sensor layer <b>106</b>B by a via <b>182</b>. Connection sensor layers <b>106</b>A and layer saves input/outputs (I/Os) in products. While one via <b>180</b> or <b>182</b> have been illustrated, it is emphasized that any number of vias may be employed necessary to create the desired resistance. Also, while two sensor layers <b>106</b>A, <b>106</b>B have been shown in <figref idref="DRAWINGS">FIGS. 6-8</figref>, it is emphasized that sensor <b>100</b> (<figref idref="DRAWINGS">FIG. 1</figref>) may include any number of sensor layers <b>106</b> within any respective number of layers <b>104</b> of the IC structure. Alternatively, sensor layer <b>106</b>A and sensor layer <b>106</b>B can be standalone layers without vias connecting them. In this case interlevel (in addition to intralevel) leakage and bias, as well as resistance of each individual layer, can be performed. Thus, if a chip fails, one can know which layer(s) is/are failing.

0030<figref idref="DRAWINGS">FIG. 9</figref> shows an enlarged top view of the sensor as noted in <figref idref="DRAWINGS">FIG. 1</figref> according to alternative embodiments of the disclosure. In <figref idref="DRAWINGS">FIG. 9</figref>, sensor <b>100</b> couples to other conductive structure, e.g., wires, vias, active devices, etc., in other layers <b>104</b> of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>). In the example shown, sensor <b>100</b> is in a first (sensor) layer <b>104</b>C of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>) and is coupled to other conductive structure, for example, wires <b>186</b>, in another layer(s), e.g., layer <b>104</b>D, of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>) by vias <b>188</b> that couple to conductive elements <b>190</b> thereof. <figref idref="DRAWINGS">FIG. 10</figref> shows another alternative embodiment of sensor <b>100</b> in which at least one conductive element <b>192</b> includes a via <b>194</b> electrically coupled thereto, but via <b>194</b> does not couple to any other structure. That is, via <b>194</b> simply extends into an adjacent layer <b>104</b> (<figref idref="DRAWINGS">FIG. 1</figref>) of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>).

0031<figref idref="DRAWINGS">FIG. 11</figref> shows a top view of a sensor <b>200</b> for IC structure <b>102</b> according to another embodiment of the disclosure, and <figref idref="DRAWINGS">FIG. 12</figref> shows an enlarged top view of sensor <b>200</b> as noted in <figref idref="DRAWINGS">FIG. 11</figref>. In this embodiment, sensor <b>200</b> includes another conductive comb structure <b>238</b> (phantom box in <figref idref="DRAWINGS">FIG. 12</figref>) having a set of interdigitating conductive elements <b>220</b>C. That is, sensor <b>200</b> includes an example of the sensor as described herein (example used from <figref idref="DRAWINGS">FIG. 7</figref>), but with a third conductive structure <b>210</b> (spine <b>232</b>) disposed parallel to a selected one of first conductive structure <b>110</b> (spine <b>132</b>)(as shown) and second conductive structure <b>112</b> (spine <b>136</b>). Similar, to conductive structures <b>110</b>, <b>112</b>, third conductive structure <b>210</b> is proximate perimeter <b>108</b> of IC structure <b>102</b> (<figref idref="DRAWINGS">FIG. 1</figref>). Third conductive structure <b>210</b> may run parallel to first and second conductive structures <b>110</b>, <b>112</b>. Here, the interdigitating conductive elements include, in addition to first and second pluralities of interdigitating conductive elements <b>222</b>, <b>224</b> (within 2 sets <b>220</b>A, <b>220</b>B), a third plurality of conductive elements <b>226</b> electrically coupled to third conductive structure <b>210</b>. Third plurality of conductive elements <b>226</b> interdigitating with a fourth plurality of conductive elements <b>228</b> electrically coupled to the selected one of first conductive structure <b>110</b> (as shown) and second conductive structure <b>112</b>. Conductive elements <b>226</b> and <b>228</b> are shown in the form of the example from <figref idref="DRAWINGS">FIG. 9</figref> (i.e., coupling to other conductive structure in other IC layers), but any embodiment of interdigitating conductive elements described herein can be employed with the new conductive comb structure <b>238</b>. While three conductive structures <b>110</b>, <b>112</b>, <b>210</b> have been illustrated, four or more with sets of interdigitating conductive elements may also be employed.

0032While conductive structures <b>110</b>, <b>112</b>, <b>210</b> and conductive elements <b>122</b>, <b>124</b>, etc., have been illustrated herein as straight lines, it is understood that they may take a variety of alternative shapes within the teachings of the disclosure.

0033Sensor <b>100</b>, <b>200</b> described herein can be built using minimum ground rule line dimensions and spacing along a perimeter of an IC structure. Consequently, sensor <b>100</b>, <b>200</b> does not require enlarged widths to maintain lower resistance, as is conventional. Sensor <b>100</b>, <b>200</b> also allows IC package integrity monitoring at time zero and in real time over a product lifetime. The various embodiments described herein and otherwise possible according to the teachings of the disclosure enable a high level of customization for a particular IC structure and/or application.

0034The resulting IC structure (and/or sensor) described herein can be distributed by the fabricator in raw wafer form (that is, as a single wafer that has multiple unpackaged chips), as a bare die, or in a packaged form. In the latter case, the chip is mounted in a single chip package (such as a plastic carrier, with leads that are affixed to a motherboard or other higher level carrier) or in a multichip package (such as a ceramic carrier that has either or both surface interconnections or buried interconnections). In any case, the chip may be then integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either (a) an intermediate product, such as a motherboard, or (b) an end product. The end product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products having a display, a keyboard or other input device, and a central processor.

0035The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. “Optional” or “optionally” means that the subsequently described event or circumstance may or may not occur, and that the description includes instances where the event occurs and instances where it does not.

0036Approximating language, as used herein throughout the specification and claims, may be applied to modify any quantitative representation that could permissibly vary without resulting in a change in the basic function to which it is related. Accordingly, a value modified by a term or terms, such as “about”, “approximately” and “substantially”, are not to be limited to the precise value specified. In at least some instances, the approximating language may correspond to the precision of an instrument for measuring the value. Here and throughout the specification and claims, range limitations may be combined and/or interchanged, such ranges are identified and include all the sub-ranges contained therein unless context or language indicates otherwise. “Approximately” as applied to a particular value of a range applies to both values, and unless otherwise dependent on the precision of the instrument measuring the value, may indicate +/−10% of the stated value(s).

0037The corresponding structures, materials, acts, and equivalents of all means or step plus function elements in the claims below are intended to include any structure, material, or act for performing the function in combination with other claimed elements as specifically claimed. The description of the present disclosure has been presented for purposes of illustration and description, but is not intended to be exhaustive or limited to the disclosure in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the disclosure. The embodiment was chosen and described in order to best explain the principles of the disclosure and the practical application, and to enable others of ordinary skill in the art to understand the disclosure for various embodiments with various modifications as are suited to the particular use contemplated.