Micro device transfer head array

RELATED APPLICATIONS

0001This application is a continuation of U.S. patent application Ser. No. 14/681,707, filed Apr. 8, 2015, which is a continuation of U.S. patent application Ser. No. 13/481,615 filed May 25, 2012, now U.S. Pat. No. 9,034,754, the full disclosure of which is incorporated herein by reference.

BACKGROUND

0002Field

0003The present invention relates to micro devices. More particularly embodiments of the present invention relate to a micro device transfer head and a method of transferring one or more micro devices to a receiving substrate.

0004Background Information

0005Integration and packaging issues are one of the main obstacles for the commercialization of micro devices such as radio frequency (RF) microelectromechanical systems (MEMS) microswitches, light-emitting diode (LED) display systems, and MEMS or quartz-based oscillators.

0006Traditional technologies for transferring of devices include transfer by wafer bonding from a transfer wafer to a receiving wafer. One such implementation is “direct printing” involving one bonding step of an array of devices from a transfer wafer to a receiving wafer, followed by removal of the transfer wafer. Another such implementation is “transfer printing” involving two bonding/de-bonding steps. In transfer printing a transfer wafer may pick up an array of devices from a donor wafer, and then bond the array of devices to a receiving wafer, followed by removal of the transfer wafer.

0007Some printing process variations have been developed where a device can be selectively bonded and de-bonded during the transfer process. In both traditional and variations of the direct printing and transfer printing technologies, the transfer wafer is de-bonded from a device after bonding the device to the receiving wafer. In addition, the entire transfer wafer with the array of devices is involved in the transfer process.

SUMMARY OF THE INVENTION

0008A micro device transfer head and head array, and a method of transferring one or more micro devices to a receiving substrate are disclosed. For example, the receiving substrate may be, but is not limited to, a display substrate, a lighting substrate, a substrate with functional devices such as transistors or integrated circuits (ICs), or a substrate with metal redistribution lines.

0009In an embodiment, a micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer includes a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure that protrudes above the silicon interconnect. A dielectric layer such as silicon oxide, hafnium oxide, aluminum oxide, or tantalum oxide, covers a top surface of each mesa structure. Each silicon electrode may optionally include an electrode lead.

0010The patterned silicon layer may be the top silicon layer in a silicon-on-insulator (SOI) substrate including the top silicon layer, a buried oxide layer, and base silicon substrate. In an embodiment, the base silicon substrate is a (100) bulk silicon substrate. The top silicon layer may be doped, for example, with a n-dopant such as phosphorus.

0011In an embodiment a via extends through the base substrate from a backside of the base substrate to the patterned silicon layer, and the via is in electrical connection with the silicon interconnect and the array of silicon electrodes. In an embodiment, the via extends through the buried oxide layer between the patterned silicon layer and the base substrate. The via may have straight or tapered sidewalls. A passivation layer may cover a side surface of the via within the base substrate. The via may terminate at a bottom surface of the patterned silicon layer or extend through the patterned silicon layer. Where the via terminates at a bottom surface of the patterned silicon layer a conductive layer may be formed on the passivation layer in the via, and in electrical contact with the bottom surface of the patterned silicon layer. Where the via extends through the patterned silicon layer, a conductive layer may be formed on the passivation layer in the via, and in electrical contact with an interior side surface of the patterned silicon layer. The conductive layer may also partially cover a top surface of the patterned silicon layer. The portion of the conductive layer partially covering a top surface of the patterned silicon layer may have a different thickness than the portion of the conductive layer on the passivation layer. Whether the via terminates at a bottom surface of the patterned silicon layer or extends through the patterned silicon layer, the conductive layer may not completely fill the via. In an embodiment, the dielectric layer is partially formed within the via.

0012In an embodiment, the micro device transfer head array includes a base silicon substrate, a patterned silicon layer over the base silicon substrate, and a buried silicon oxide layer between the patterned silicon layer and the base silicon substrate. The patterned silicon layer includes a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure that protrudes above the silicon interconnect. A via extends through the base silicon substrate and the buried silicon oxide layer from a backside of the base silicon substrate to the patterned silicon layer, and in electrical connection with the silicon interconnect and the array of silicon electrodes. As silicon oxide passivation layer covers a side surface of the via within the base silicon substrate. The via may terminate at a bottom surface of the patterned silicon layer or extend through the patterned silicon layer. A dielectric layer such as silicon oxide, hafnium oxide, aluminum oxide, or tantalum oxide, covers a top surface of each mesa structure.

0013In an embodiment, the micro device transfer head array includes first and second vias extending through the base substrate from the backside of the base substrate to the patterned silicon layer. The first via is in electrical connection with a first silicon interconnect and a first array of silicon electrodes, and the second via is in electrical connection with a second silicon interconnect and a second array of silicon electrodes. The first and second arrays of silicon electrodes may be aligned to form an array of bipolar silicon electrodes. The first and second vias may terminate at a bottom surface of the patterned silicon layer or extend through the patterned silicon layer. In an embodiment, a first dielectric layer is located on the patterned silicon layer, and is removed from over the mesa structures, and the dielectric layer covering the top surface of each mesa structure has a higher dielectric constant or dielectric breakdown strength than the first dielectric layer.

0014In an embodiment, a method of forming a micro device transfer head array includes etching a top silicon layer of a SOI stack to form a silicon interconnect and a plurality of silicon electrodes electrically connected with the silicon interconnect, with each silicon electrode including a mesa structure that protrudes above the silicon interconnect. A dielectric layer is then formed over the plurality of silicon electrodes through deposition, or thermal oxidation of the patterned silicon layer. Etching the top silicon layer may include first forming a mask layer on the top silicon layer, and patterning the mask layer to form a plurality of islands. The mask layer can be formed by deposition, or thermal oxidation of the top silicon layer. The plurality of islands can then be used as an etching mask to etch a plurality of trenches partially through the top silicon layer. The plurality of islands are then removed and a blanket etching can be performed on the top silicon layer to complete formation of the silicon interconnect and the plurality of silicon electrodes, with etching stopping on the buried oxide layer.

0015In an embodiment, a portion of the dielectric layer is removed from over the plurality of mesa structures, and a second dielectric layer is deposited over the plurality of mesa structure. In an embodiment, the second dielectric layer has a higher dielectric constant or breakdown voltage than the dielectric layer. The second dielectric layer can be deposited using a technique such as atomic layer deposition.

0016In an embodiment, a mask layer is formed on an SOI stack that includes the top silicon layer over a buried oxide layer, a base substrate under the buried oxide layer, and a bottom passivation layer under the base substrate. A via opening is etched through the bottom passivation layer, the base substrate, and the buried oxide layer, and a patterned conductive layer is then formed within the via opening to make electrical contact with the silicon interconnect and the plurality of silicon electrodes. For example, the patterned conductive layer can be formed by depositing through a shadow mask.

0017The via opening through the bas substrate may have straight sidewalls when formed using dry reactive ion etching (DRIE) or tapered sidewalls when formed using potassium hydroxide (KOH) solution. Etching of the via opening may include forming a smaller opening within the buried oxide layer than in the base substrate. Side surfaces of the via opening within the base substrate can be thermally oxidized to form a passivation layer covering the side surface of the via opening prior to forming the patterned conductive layer within the opening. For example, thermally oxidizing the side surfaces of the via opening can be performed simultaneously with thermally oxidizing the plurality of silicon electrodes to form the dielectric layer over the plurality of silicon electrodes.

0018In an embodiment, a mask layer is formed on an SOI stack that includes the top silicon layer over a buried oxide layer, a base substrate under the buried oxide layer, and a bottom passivation layer under the base substrate. A backside via opening is etched through the bottom passivation layer and the base substrate stopping on the buried oxide layer. A topside via opening is etched through the dielectric layer, the silicon layer, and the buried oxide layer so that the topside via opening connects with the backside via opening. A patterned conductive layer can then be deposited within the topside via opening over an exposed top surface of the silicon interconnect and within an interior side surface of the silicon interconnect. A second patterned conductive layer can then be deposited within the backside via opening and in electrical contact with the patterned conductive layer. Deposition of the patterned conductive layers can be accomplished with deposition through shadow masks.

BRIEF DESCRIPTION OF THE DRAWINGS

0019<figref idref="DRAWINGS">FIG. 1A</figref> is a plan view illustration of a bipolar micro device transfer head in accordance with an embodiment of the invention.

0020<figref idref="DRAWINGS">FIG. 1B</figref> includes a combination plan view and combination cross-section side view illustration taken along lines V-V, W-W, X-X, Y-Y, and Z-Z from <figref idref="DRAWINGS">FIG. 1A</figref> in accordance with an embodiment of the invention.

0021<figref idref="DRAWINGS">FIG. 2A</figref> is a combination cross-sectional side view illustration taken along lines V-V, W-W, X-X, Y-Y, and Z-Z from <figref idref="DRAWINGS">FIG. 1A</figref> in accordance with an embodiment of the invention.

0022<figref idref="DRAWINGS">FIG. 2B</figref> is a combination plan view illustration taken along lines V-V, W-W, X-X, Y-Y, and Z-Z from <figref idref="DRAWINGS">FIG. 1A</figref> in accordance with an embodiment of the invention.

0023<figref idref="DRAWINGS">FIG. 3A</figref> is a combination cross-sectional side view illustration of a bipolar micro device transfer head including topside and backside via openings in accordance with an embodiment of the invention.

0024<figref idref="DRAWINGS">FIG. 3B</figref> is a combination top plan view of a bipolar micro device transfer head including topside and backside via openings in accordance with an embodiment of the invention.

0025<figref idref="DRAWINGS">FIG. 4A</figref> is a combination cross-sectional side view illustration of a bipolar micro device transfer head including tapered backside via openings in accordance with an embodiment of the invention.

0026<figref idref="DRAWINGS">FIG. 4B</figref> is a combination top plan view of a bipolar micro device transfer head including tapered backside via openings in accordance with an embodiment of the invention.

0027<figref idref="DRAWINGS">FIG. 5A</figref> is a combination cross-sectional side view illustration of a bipolar micro device transfer head including deposited dielectric layer in accordance with an embodiment of the invention.

0028<figref idref="DRAWINGS">FIG. 5B</figref> is a combination top plan view of a bipolar micro device transfer head including deposited dielectric layer in accordance with an embodiment of the invention.

0029<figref idref="DRAWINGS">FIGS. 6A-14B</figref> illustrate a method of forming a bipolar micro device transfer head including backside via openings in accordance with an embodiment of the invention.

0030<figref idref="DRAWINGS">FIGS. 15A-18B</figref> illustrate a method of forming a bipolar micro device transfer head including topside and backside via openings in accordance with an embodiment of the invention.

0031<figref idref="DRAWINGS">FIGS. 19A-28B</figref> illustrate a method of forming a bipolar micro device transfer head including backside via openings with tapered sidewalls in accordance with an embodiment of the invention.

0032<figref idref="DRAWINGS">FIGS. 29A-32B</figref> illustrate a method of forming a bipolar micro device transfer head including a replacement electrode dielectric in accordance with an embodiment of the invention.

0033<figref idref="DRAWINGS">FIG. 33</figref> is a flow chart illustrating a method of picking up and transferring an array of micro devices from a carrier substrate to a receiving substrate in accordance with an embodiment of the invention.

0034<figref idref="DRAWINGS">FIG. 34</figref> is a cross-sectional side view illustration of an array of micro device transfer heads positioned over an array of micro devices on a carrier substrate in accordance with an embodiment of the invention.

0035<figref idref="DRAWINGS">FIG. 35</figref> is a cross-sectional side view illustration of an array of micro device transfer heads in contact with an array of micro devices in accordance with an embodiment of the invention.

0036<figref idref="DRAWINGS">FIG. 36</figref> is a cross-sectional side view illustration of an array of transfer heads picking up an array of micro devices in accordance with an embodiment of the invention.

0037<figref idref="DRAWINGS">FIG. 37</figref> is a cross-sectional side view illustration of an array of micro devices released onto a receiving substrate in accordance with an embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

0038Embodiments of the present invention describe a micro device transfer head and head array, and method of transferring a micro device and an array of micro devices to a receiving substrate. For example, the micro device transfer head and head array may be used to transfer micro devices such as, but not limited to, diodes, LEDs, transistors, ICs, and MEMS from a carrier substrate to a receiving substrate such as, but not limited to, a display substrate, a lighting substrate, a substrate with functional devices such as transistors or integrated circuits (ICs), or a substrate with metal redistribution lines.

0039In various embodiments, description is made with reference to figures. However, certain embodiments may be practiced without one or more of these specific details, or in combination with other known methods and configurations. In the following description, numerous specific details are set forth, such as specific configurations, dimensions and processes, etc., in order to provide a thorough understanding of the present invention. In other instances, well-known semiconductor processes and manufacturing techniques have not been described in particular detail in order to not unnecessarily obscure the present invention. Reference throughout this specification to “one embodiment,” “an embodiment” or the like means that a particular feature, structure, configuration, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase “in one embodiment,” “an embodiment” or the like in various places throughout this specification are not necessarily referring to the same embodiment of the invention. Furthermore, the particular features, structures, configurations, or characteristics may be combined in any suitable manner in one or more embodiments.

0040The terms “over”, “to”, “between” and “on” as used herein may refer to a relative position of one layer with respect to other layers. One layer “over” or “on” another layer or bonded “to” another layer may be directly in contact with the other layer or may have one or more intervening layers. One layer “between” layers may be directly in contact with the layers or may have one or more intervening layers.

0041The terms “micro” device or “micro” LED structure as used herein may refer to the descriptive size of certain devices or structures in accordance with embodiments of the invention. As used herein, the terms “micro” devices or structures are meant to refer to the scale of 1 to 100 μm. However, it is to be appreciated that embodiments of the present invention are not necessarily so limited, and that certain aspects of the embodiments may be applicable to larger, and possibly smaller size scales.

0042In one aspect, without being limited to a particular theory, embodiments of the invention describe micro device transfer heads and head arrays which operate in accordance with principles of electrostatic grippers, using the attraction of opposite charges to pick up micro devices. In accordance with embodiments of the present invention, a pull-in voltage is applied to a micro device transfer head in order to generate a grip pressure on a micro device and pick up the micro device.

0043In another aspect, embodiments of the invention describe a manner of forming an array of micro device transfer heads from a commercially available silicon-on-insulator (SOI) substrate including a base substrate, buried oxide layer, and a top silicon device layer. In such an embodiment, a silicon interconnect and an array of electrodes are formed from the top silicon layer of the SOI substrate. Each individual transfer head includes one or more silicon electrodes. For example, the transfer heads may include monopolor or bipolar electrodes. In an embodiment, a bipolar electrostatic transfer head includes a pair of silicon electrodes, where each silicon electrode includes a mesa structure and optionally an electrode lead. The mesa structures for the pair of silicon electrodes protrude above their respective silicon interconnects to provide a localized contact point to pick up a specific micro device during a pick up operation. In this manner, it is not necessary to form patterned metal electrodes. It has been observed that when patterning of metal electrodes and electrode leads using a negative photoresist, for example, it can be difficult to control exposure of the photoresist at different depths (e.g. along both a top surface and down sidewalls of a mesa structure). Peeling of the patterned metal layers has also been observed during photoresist removal, potentially affecting operability of the transfer heads. In accordance with embodiments of the present invention, it is not required to form a patterned metal electrode over a mesa structure. Instead, the protruding profile of the mesa structure is formed by patterning the silicon electrode to include a raised portion corresponding to the mesa structure which protrudes away from the base substrate and above the silicon interconnect.

0044Silicon electrodes prepared in accordance with embodiments of the invention may include integrally formed mesa structures which are substantially taller compared to non-integrally formed mesa structures with patterned metal electrodes. Photolithography can limit patterned metal electrode structures to heights of 5-10 μm, whereas silicon electrode mesa structures can be up to 20-30 μm or taller. The mesa structure height for a silicon electrode structure is limited by the etch aspect ratio and the electrode gap (e.g. between a pair of bipolar silicon electrodes). In an embodiment, aspect ratios for silicon electrode mesa structures can range from 10-20:1. For example, silicon electrode mesa structures in a bipolar electrode configuration can be 20 μm tall separated by a 2 μm gap between the mesa structures. Taller electrode structures may also afford larger clearance for contaminant particles and reduce the effects of stray filed on un-targeted micro devices. When compared to metalized mesa structures, silicon electrodes with integrally formed mesa structures can be more robust to surface contamination and errors in planar alignment of the micro device transfer head in relation to the micro device carrier substrate.

0045In another aspect, embodiments of the invention describe a manner of forming an array of micro device transfer heads from a commercially available silicon-on-insulator (SOI) substrate which allows for a processing sequence with minimal processing steps. The processing sequence does not require metal deposition and patterning steps to form metal electrodes, which relieves thermal processing constraints and allows for the formation of dielectric and passivation layers by high temperature thermal oxidation resulting in reduced deposition and patterning operations.

0046In another aspect, embodiments of the invention describe a transfer head and transfer head array including vias extending through the base substrate from a backside of the base substrate to the patterned silicon layer for connecting the electrodes with working circuitry of a transfer head assembly. The processing sequence in accordance with embodiments of the invention also enables passivation of the vias extending through the base substrate with high temperature thermal oxide growth.

0047In yet another aspect, embodiments of the invention describe a manner for mass transfer of an array of pre-fabricated micro devices with an array of transfer heads. For example, the pre-fabricated micro devices may have a specific functionality such as, but not limited to, a LED for light-emission, silicon IC for logic and memory, and gallium arsenide (GaAs) circuits for radio frequency (RF) communications. In some embodiments, arrays of micro LED devices which are poised for pick up are described as having a 10 μm by 10 μm pitch, or 5 μm by 5 μm pitch. At these densities a 6 inch substrate, for example, can accommodate approximately 165 million micro LED devices with a 10 μm by 10 μm pitch, or approximately 660 million micro LED devices with a 5 μm by 5 μm pitch. A transfer tool including an array of transfer heads matching an integer multiple of the pitch of the corresponding array of micro LED devices can be used to pick up and transfer the array of micro LED devices to a receiving substrate. In this manner, it is possible to integrate and assemble micro LED devices into heterogeneously integrated systems, including substrates of any size ranging from micro displays to large area displays, and at high transfer rates. For example, a 1 cm by 1 cm array of micro device transfer heads can pick up and transfer more than 100,000 micro devices, with larger arrays of micro device transfer heads being capable of transferring more micro devices. Each transfer head in the array of transfer heads may also be independently controllable, which enables selective pick up and release of the micro devices.

0048Referring now to <figref idref="DRAWINGS">FIG. 1A</figref>, a plan view illustration is provided for a portion of a micro device transfer head array and includes views at different depths. In the particular embodiment illustrated, the hatch shading illustrates an arrangement of silicon electrodes and silicon interconnects as viewed from the top surface of the micro device transfer head array, and the darker shading illustrates a backside via connection as viewed from the backside surface of the micro device transfer head array. In this manner, the plan view illustration provides detail regarding structures which have been formed from both sides of the SOI wafer.

0049As illustrated, the micro device transfer head array <b>100</b> includes an array of transfer heads <b>102</b> connected by an arrangement of silicon trace interconnects <b>104</b>, and silicon bus interconnects <b>106</b>. As illustrated, silicon bus interconnects <b>106</b> may be formed around a periphery or outside a working area of the transfer head array including the array of transfer heads <b>102</b>. In an embodiment, each transfer head <b>102</b> includes a pair of silicon electrodes <b>110</b>, with each silicon electrode <b>110</b> including a mesa structure <b>112</b> and optionally an electrode lead <b>114</b> connected to a silicon interconnect <b>104</b>.

0050In an embodiment, a plurality of vias <b>120</b> are formed through the backside of the base substrate to the patterned silicon layer to make contact with silicon interconnects <b>106</b> in order to electrically connect the silicon electrodes <b>110</b> with working circuitry of a transfer head assembly. In the embodiment illustrated in <figref idref="DRAWINGS">FIG. 1A</figref>, the silicon interconnect <b>106</b> on the left side of the illustration may be connected to a first voltage source V_A, and the silicon interconnect <b>106</b> on the right side of the illustration may be connected to a second voltage source V_B. Where each transfer head <b>102</b> is operable as a bipolar transfer head, voltage sources V_Aand V_Bmay simultaneously apply opposite voltages so that each of the silicon electrodes <b>110</b> in a respective transfer head <b>102</b> has an opposite voltage.

0051Referring now to <figref idref="DRAWINGS">FIG. 1B</figref>, a combination plan view illustration and combination cross-sectional side view illustration are provided taken along lines V-V, W-W, X-X, Y-Y, and Z-Z from <figref idref="DRAWINGS">FIG. 1A</figref>. The combination views are not representations of the precise relative locations for all of the different features illustrated, rather the combination views combine specific features at different locations in <figref idref="DRAWINGS">FIG. 1A</figref> in a single illustration to more easily represent the processing sequence. For example, while the cross-sectional side view illustration shows one via <b>120</b> corresponding to one silicon electrode <b>110</b>, it is clear from <figref idref="DRAWINGS">FIG. 1A</figref> that one via <b>120</b> may be electrically connected with a plurality of silicon electrodes <b>110</b> along one or more silicon interconnects <b>104</b>. As illustrated, lines V-V and Z-Z are along one or more trenches <b>116</b> between adjacent silicon electrodes <b>110</b>. Referring again to <figref idref="DRAWINGS">FIG. 1A</figref>, one or more trenches <b>116</b> may be formed around all silicon electrodes <b>110</b>, and between silicon interconnects <b>104</b>, <b>106</b>. As illustrated, lines W-W and Y-Y are along backside vias <b>120</b>. As illustrated, line X-X is across a bipolar transfer head including a pair of silicon electrodes <b>110</b>.

0052Still referring to <figref idref="DRAWINGS">FIG. 1B</figref>, a silicon electrode <b>110</b> includes a mesa structure <b>112</b> and optionally an electrode lead <b>114</b>, where the mesa structure <b>112</b> is an elevated portion of the silicon electrode <b>110</b>. A dielectric layer <b>118</b> may cover a top surface of the pair of silicon electrodes <b>110</b>. Dielectric layer <b>118</b> may also cover a side surface of the mesa structures <b>112</b> laterally between the pair of mesa structure <b>112</b> for the pair of silicon electrodes <b>110</b> in a bipolar transfer head <b>102</b>. A via opening <b>120</b>A extends through the base substrate <b>130</b> from a backside of the base substrate to the patterned silicon layer <b>140</b> where silicon interconnect <b>106</b> is located. In the particular embodiment illustrated in <figref idref="DRAWINGS">FIG. 1B</figref>, the via opening <b>120</b>A extends through a buried oxide layer <b>124</b> and terminates at a bottom surface of the patterned silicon layer <b>140</b> where silicon interconnect <b>106</b> is located. A passivation layer <b>132</b> is formed on the backside of the base substrate <b>130</b>, and a passivation layer <b>133</b> is formed on side surfaces within the via opening <b>120</b>A. Where base substrate is formed of silicon, the passivation layers <b>132</b>, <b>133</b> insulate electrical shorting between the vias <b>120</b>. The buried oxide layer <b>124</b> also insulates electrical shorting between the silicon electrodes <b>110</b>, and silicon interconnects <b>104</b>, <b>106</b>.

0053Referring now to <figref idref="DRAWINGS">FIGS. 2A-2B</figref>, <figref idref="DRAWINGS">FIGS. 3A-3B</figref>, <figref idref="DRAWINGS">FIGS. 4A-4B</figref>, and <figref idref="DRAWINGS">FIGS. 5A-5B</figref>, various different transfer head array configurations in accordance with embodiments of the invention are illustrated side-by-side. It is to be understood that while the following variations are separately illustrated and described, the variations are not necessarily incompatible with one another, and that the variations may be combined in any suitable manner in one or more embodiment.

0054<figref idref="DRAWINGS">FIGS. 2A-2B</figref> are the combination plan view illustration and combination cross-sectional side view illustration described above with regard to <figref idref="DRAWINGS">FIG. 1B</figref>. <figref idref="DRAWINGS">FIGS. 3A-3B</figref>, <figref idref="DRAWINGS">FIGS. 4A-4B</figref>, and <figref idref="DRAWINGS">FIGS. 5A-5B</figref> are combination plan view illustrations and combination cross-sectional side view illustrations prepared similarly as those in <figref idref="DRAWINGS">FIG. 1B</figref>. Therefore, the combination views are not representations of the precise relative locations for all of the different features illustrated, rather combination views combine specific features at different locations previously identified in <figref idref="DRAWINGS">FIG. 1A</figref> in order to more easily represent the particular variations in processing sequences.

0055As previously described with regard to <figref idref="DRAWINGS">FIG. 1B</figref>, the vias <b>120</b> illustrated in <figref idref="DRAWINGS">FIG. 2A-2B</figref> extend through the base substrate <b>130</b> from a backside of the base substrate to a patterned silicon layer <b>140</b>. In an embodiment, vias <b>120</b> contact one or more silicon bus interconnects <b>106</b> in the patterned silicon layer <b>140</b>. In other embodiments, vias <b>120</b> may contact other features or silicon interconnects in the patterned silicon layer <b>140</b>. Via <b>120</b> along line W-W may be electrically connected to a first silicon interconnect <b>106</b> which is connected to a first voltage source V_A, and via <b>120</b> along line Y-Y may be electrically connected to a second silicon interconnect <b>106</b> which is connected to a second voltage source V_B. In the particular embodiment illustrated, via openings <b>120</b>A extend through a buried oxide layer <b>124</b> and terminate at a bottom surface of a silicon interconnect <b>106</b>. A passivation layer <b>132</b> is formed on the backside of the base substrate <b>130</b> and on side surfaces within the via openings <b>120</b>A. A conductive layer <b>122</b> is formed on the passivation layer <b>133</b> and is in electrical contact with the bottom surface of a silicon interconnect <b>106</b>. In the particular embodiment illustrated, the conductive layers <b>122</b> do not completely fill the via openings <b>120</b>A, and the conductive layers <b>122</b> are physically and electrically separated in order to prevent shorting between vias <b>120</b> connected to different voltage sources V_A, V_B. In an embodiment, vias <b>120</b> which are electrically connected to the same voltage source may or may not be physically and electrically connected. For example, a conductive layer <b>122</b> may span across both vias <b>120</b> on the left side of <figref idref="DRAWINGS">FIG. 1A</figref>, and also be electrically and physically separated from the via <b>120</b> taken along line Y-Y on the right side of <figref idref="DRAWINGS">FIG. 1A</figref>.

0056Referring now to <figref idref="DRAWINGS">FIGS. 3A-3B</figref>, in one embodiment topside via opening <b>120</b>B may be formed over the backside via opening <b>120</b>B to form via <b>120</b>. As will become more apparent in the following description, the topside via opening <b>120</b>B may be formed in order make electrical contact with the silicon interconnects <b>106</b> and to form an opening through the buried oxide layer <b>124</b> without the lithographic challenges associated with not adversely affecting the passivation layer <b>133</b> along the sidewalls of via openings <b>120</b>A. A conductive layer <b>123</b> can optionally be formed over the exposed top surface of the silicon interconnects <b>106</b> and within an interior side surface of the silicon interconnects <b>106</b>. In this manner, partially forming conductive layer <b>123</b> over the top surface of the silicon interconnect <b>106</b> can provide greater surface area for ohmic contact with the silicon interconnects <b>106</b>. Due to the closer proximity of the silicon interconnect <b>106</b> to the top surface of the SOI structure than the backside surface of the SOI structure, in accordance with some embodiments, it may be more efficient to form a layer of conductive layer <b>123</b> within the interior side surface of silicon interconnect <b>106</b> from above the top surface of the SOI structure as opposed to from the back surface of the SOI structure. Conductive layer <b>123</b> may be formed from the same or different material from conductive layer <b>122</b>. Conductive layers <b>122</b>, <b>123</b> may form a continuous conductive layer along the via <b>120</b> side surfaces.

0057Referring now to <figref idref="DRAWINGS">FIGS. 4A-4B</figref>, in one embodiment the backside via opening <b>120</b>A includes tapered sidewalls in order to more efficiently form passivation layer <b>133</b> along sidewalls of the via opening <b>120</b>A, and conductive layer <b>122</b> on the passivation layer <b>133</b> and on interior side surfaces of silicon interconnect <b>106</b>. It is to be appreciated, that while <figref idref="DRAWINGS">FIGS. 4A-4B</figref> are illustrated as a variation of <figref idref="DRAWINGS">FIGS. 3A-3B</figref>, that the feature of tapered sidewalls in backside via opening <b>120</b>A can be combined with the embodiment illustrated in <figref idref="DRAWINGS">FIGS. 2A-2B</figref>, and that a topside via opening <b>120</b>B is not required for the formation of tapered sidewalls in backside via opening <b>120</b>A. For example, the tapered sidewalls may partially alleviate the lithographic challenges associated with forming openings in the buried oxide layer <b>124</b> from the backside via openings <b>120</b>A while not adversely affecting the passivation layer <b>133</b> along the sidewalls of via openings <b>120</b>A.

0058Referring now to <figref idref="DRAWINGS">FIGS. 5A-5B</figref>, in one embodiment, dielectric layer <b>118</b> may be partially or completely removed. In the particular embodiment illustrated in <figref idref="DRAWINGS">FIGS. 5A-5B</figref>, the dielectric layer <b>118</b> is removed from over the mesa structures <b>112</b>. A second dielectric layer <b>126</b> is formed over the top surface of mesa structures <b>112</b> and over the remaining topography of the transfer head array, which may include portions of dielectric layer <b>118</b>. Dielectric layer <b>126</b> may also cover the topside via openings <b>120</b>B and corresponding conductive layers <b>123</b>, and may partially or completely fill the topside via openings <b>120</b>B within the silicon interconnects <b>106</b>. In an embodiment, dielectric layer <b>126</b> has a higher dielectric constant and/or dielectric breakdown strength than dielectric layer <b>118</b>. In an embodiment, dielectric layer <b>118</b> is thermally grown SiO₂, and dielectric layer <b>126</b> is atomic layer deposition (ALD) SiO₂, Al₂O₃, Ta₂O₅, or RuO₂. It is to be appreciated, that while <figref idref="DRAWINGS">FIGS. 5A-5B</figref> are illustrated as a variation of <figref idref="DRAWINGS">FIGS. 4A-4B</figref>, that the feature of a dielectric layer <b>126</b> can be combined with the embodiments illustrated in <figref idref="DRAWINGS">FIGS. 2A-2B</figref> and <figref idref="DRAWINGS">FIGS. 3A-3B</figref>, and that a topside via opening <b>120</b>B or tapered sidewalls in backside via opening <b>120</b>A are not required for the formation of dielectric layer <b>126</b>.

0059<figref idref="DRAWINGS">FIGS. 6A-14B</figref> illustrate a method of forming a bipolar micro device transfer head including backside via openings in accordance with an embodiment of the invention. Initially, the processing sequence may begin with a commercially available SW substrate as illustrated in <figref idref="DRAWINGS">FIGS. 6A-6B</figref>. The SOI substrate may include base substrate <b>130</b>, top silicon device layer <b>140</b>, a buried oxide layer <b>124</b> between the base substrate and the top silicon device layer, and backside passivation layer <b>132</b>. In an embodiment, base substrate is a (100) silicon handle wafer having a thickness of 500 μm+/−50 μm, buried oxide layer <b>124</b> is 1 μm+/−0.1 μm thick, and top silicon device layer is 7-20 μm+/−0.5 μm thick. The top silicon device layer may also be doped to improve conductivity. For example, a phosphorous dopant concentration of approximately 10¹⁷cm⁻³yields a resistivity of less than 0.1 ohm-centimeter. In an embodiment, the backside passivation layer <b>132</b> is a thermal oxide having a thickness up to approximately 2 μm thick, which is the approximate upper limit for thermal oxidation of silicon.

0060A mask layer <b>142</b> may then be formed over the silicon device layer <b>140</b>, as illustrated in <figref idref="DRAWINGS">FIGS. 7A-7B</figref>. Mask layer <b>142</b> may be deposited, or alternatively thermally grown from the silicon device layer <b>140</b>. In an embodiment, mask layer <b>142</b> is a thermally growth SiO₂layer having a thickness of approximately 0.1 μm. In an embodiment, where mask layer <b>142</b> is thermally growth SiO₂, the mask layer <b>142</b> has a thickness which is significantly less than the thickness of buried oxide (SiO₂) layer <b>124</b> in order to maintain structural stability for the partially patterned SOI structure during removal of the patterned mask layer.

0061Referring to <figref idref="DRAWINGS">FIGS. 8A-8B</figref>, the mask layer <b>142</b> is then patterned to form an array of islands <b>144</b> which will correspond to the mesa structures of the silicon electrodes. In an embodiment, mask layer is a thermally grown SiO₂layer, and islands <b>144</b> are formed by applying a positive photoresist, exposing, and removing undeveloped areas of the photoresist with a potassium hydroxide (KOH) developer solution. The mask layer <b>142</b> is then dry etched to form islands <b>144</b> using a suitable technique such as ion milling, plasma etching, reactive ion etching (RIE), or reactive ion beam etching (RIBE), electron cyclotron resonance (ECR), or inductively coupled plasma (ICP), stopping on the silicon layer <b>140</b>. If a high degree of anisotropic etching is not required, a dry plasma etching technique with a plasma etchant such as CF₄, SF₆or NF₃may be used. The patterned photoresist is then removed by O₂ashing followed by piranha etch resulting in the structure illustrated in <figref idref="DRAWINGS">FIGS. 8A-8B</figref>.

0062In an embodiment, backside via openings <b>120</b>A are then formed in the SOI substrate. Initially, as illustrated in <figref idref="DRAWINGS">FIGS. 9A-9B</figref>, the backside via openings are formed through the backside passivation layer <b>132</b> and base substrate <b>130</b>, stopping on the buried oxide layer <b>124</b>. In an embodiment, the backside via openings <b>120</b>A illustrated in <figref idref="DRAWINGS">FIGS. 9A-9B</figref> are formed by applying a patterned positive photoresist on the backside passivation layer <b>132</b>, followed by etching of the exposed passivation layer <b>133</b> and dry reactive ion etching (DRIE) of the base substrate <b>130</b>, stopping on the buried oxide layer <b>124</b>. The base substrate <b>130</b> may alternatively be etched with a wet etchant such as KOH. However, KOH wet etchant attacks silicon preferentially in the (100) plane, and may produce an anisotropic V-etch. DRIE etching may be selected for more vertical sidewalls in the backside via openings <b>120</b>A. After etching of the base substrate <b>130</b>, the patterned positive photoresist can be removed by O₂ashing followed by piranha etch resulting in the structure illustrated in <figref idref="DRAWINGS">FIGS. 9A-9B</figref>.

0063Referring to <figref idref="DRAWINGS">FIGS. 10A-11B</figref>, the silicon electrodes <b>110</b> and silicon interconnects <b>104</b>, <b>106</b> are patterned in a two part etching sequence. First, as illustrated in <figref idref="DRAWINGS">FIGS. 10A-10B</figref> the top silicon layer <b>140</b> is partially etched through, defining the patterns of the silicon electrodes and silicon interconnects <b>104</b>, <b>106</b>. In an embodiment, this may be accomplished with a thin patterned positive photoresist, DRIE etching approximately 5 μm of a 7-10 μm thick top silicon layer <b>140</b> in a timed etch. In accordance with embodiments of the invention, openings in the photoresist <b>117</b> (illustrated in <figref idref="DRAWINGS">FIG. 10A</figref> only) correspond to the size of the trenches <b>116</b> on the edges of <figref idref="DRAWINGS">FIG. 10A</figref> used to define the silicon electrodes <b>110</b> and silicon interconnects <b>104</b>, <b>106</b>, however, the openings over the islands <b>144</b> corresponding to the gap between silicon electrode mesa structures <b>112</b> may be larger than the gap between the islands <b>144</b>. In this manner, the islands <b>144</b> in the patterned hard mask layer <b>142</b> can be used to form silicon electrode mesa structures <b>112</b> with higher gap resolution between mesa structures when compared to using photoresist alone. The patterned positive photoresist can be removed using O₂ashing followed by piranha etch. Second, as illustrated in <figref idref="DRAWINGS">FIGS. 11A-11B</figref> with islands <b>144</b> still present, DRIE etching is continued using islands <b>144</b> as a mask to form the silicon electrodes <b>110</b> including the protruding mesa structures <b>112</b>, and silicon interconnects <b>104</b>, <b>106</b>, stopping on the underlying buried oxide layer <b>124</b>. Upon completion of etching the silicon layer <b>140</b>, a dry etching technique is performed to remove the islands <b>144</b>, approximately 0.1 μm. In an embodiment, where only 0.1 μm of oxide is removed, and the buried oxide <b>124</b> is approximately 1.0 μm thick, a significant portion of the exposed buried oxide <b>124</b> is not removed. In accordance with embodiments of the invention, the buried oxide <b>124</b> provides structural stability for the partially patterned SOI structure and a significant portion of the buried oxide <b>124</b> is not removed during removal of the islands <b>144</b>. As illustrated in <figref idref="DRAWINGS">FIG. 11B</figref>, the buried oxide layer <b>124</b> is exposed in trenches <b>116</b> around the silicon electrodes and between the interconnects.

0064Referring now to <figref idref="DRAWINGS">FIGS. 12A-12B</figref>, the front and back sides of the SOI wafer can then be oxidized in order to passivate the silicon electrodes, silicon interconnects, and backside via opening. In an embodiment, high temperature wet oxidation may be performed in order to grow an approximately 1 μm thick oxide layer <b>118</b> on the silicon electrodes <b>110</b>, between the mesa structures <b>112</b>, on the silicon interconnects <b>104</b>, <b>106</b>, and within trenches <b>116</b>. An approximately 1 μm thick oxide layer <b>133</b> is also simultaneously grown within the backside via openings <b>120</b>A along sidewalls of the base substrate <b>130</b>.

0065A dry oxide etch using a suitable dry etching technique is then performed to create openings in the buried oxide layer <b>124</b> within the backside via openings <b>120</b>A to expose a bottom surface of the patterned silicon layer <b>140</b> where silicon interconnects <b>106</b> are formed, as illustrated in <figref idref="DRAWINGS">FIGS. 13A-13B</figref>. In an embodiment, a thin positive photoresist is formed over the backside of the SOI wafer and within the backside via opening <b>120</b>A and patterned. The buried oxide layer <b>124</b> is then etched to expose a bottom surface of the silicon layer <b>140</b>. As illustrated, the openings in the buried oxide layer <b>124</b> are smaller (e.g. smaller diameter or cross-section) than the openings within the base substrate <b>130</b> (including the oxide layer <b>133</b>). In this manner, having a smaller opening within the buried oxide layer <b>124</b> than in the base substrate (including oxide layer <b>133</b>) protects against inadvertently etching through the oxide layer <b>133</b>, or undercutting the oxide layer <b>133</b> and electrically shorting the backside via <b>120</b> with the base substrate <b>130</b>. Due to lithographic tolerances and resolution capabilities, the openings within the buried oxide layer <b>124</b> may have a minimum cross-section of greater than 10 μm.

0066Referring now to <figref idref="DRAWINGS">FIGS. 14A-14B</figref>, a patterned conductive layer <b>122</b> is formed on the passivation layer <b>133</b> within the via openings <b>120</b>A and in electrical contact with the bottom surface of the silicon interconnect <b>106</b>. In an embodiment, the patterned conductive layer <b>122</b> is formed by sputtering through a shadow mask. In an embodiment, the patterned conductive layer <b>122</b> includes a first layer of 500 angstrom thick titanium (Ti), a middle layer of 500 angstrom thick titanium-tungsten (TiW), and a 1 μm to 2 μm thick outer layer of gold (Au). In an embodiment, the patterned conductive layer <b>122</b> makes ohmic contact with the silicon interconnects <b>106</b>. Following the formation of patterned conductive layer <b>122</b>, the SOI substrate may then be diced, for example using laser dicing, to form a plurality of transfer heads each including an array of transfer heads <b>102</b>, interconnected with silicon interconnects <b>104</b>, <b>106</b> and vias <b>120</b> extending through the base substrate <b>130</b> from a backside of the base substrate to the patterned silicon layer <b>140</b> to electrically connect the silicon electrodes <b>110</b> with working circuitry of a transfer head assembly.

0067<figref idref="DRAWINGS">FIGS. 15A-18B</figref> illustrate a method of forming a bipolar micro device transfer head including topside and backside via openings in accordance with an embodiment of the invention. The processing sequence leading up to <figref idref="DRAWINGS">FIGS. 15A-15B</figref> may be identical to the processing sequence of <figref idref="DRAWINGS">FIGS. 6A-12B</figref>. In an embodiment illustrated in <figref idref="DRAWINGS">FIGS. 15A-15B</figref>, openings are formed in the top dielectric layer <b>118</b> directly above the backside via openings <b>120</b>A. Openings may be formed in top dielectric layer <b>118</b> with a thick patterned positive photoresist, followed by dry etching of the top dielectric layer <b>118</b>. The patterned photoresist is then removed by O₂ashing followed by piranha etch resulting in the structure in <figref idref="DRAWINGS">FIGS. 15A-15B</figref>.

0068Referring now to <figref idref="DRAWINGS">FIGS. 16A-16B</figref>, openings are formed in the silicon layer <b>140</b> and buried oxide layer <b>124</b> to form a topside via opening <b>120</b>B which connects with backside via opening <b>120</b>A. Openings may be formed in the silicon layer <b>140</b> and buried oxide layer <b>124</b> by forming a thick patterned positive photoresist, followed by DRIE of the silicon layer <b>140</b> stopping on the buried oxide layer <b>124</b>, followed by RIE through the buried oxide layer <b>124</b>. The patterned photoresist is then removed by O₂ashing followed by piranha etch resulting in the structure in <figref idref="DRAWINGS">FIGS. 16A-16B</figref>. In this manner, forming the openings through the buried oxide layer <b>124</b> when forming the topside via openings <b>120</b>B may avoid the lithographic challenges associated with forming an opening in the buried oxide layer <b>124</b> from the backside of the SOI structure without adversely affecting the passivation layer <b>133</b> along the sidewalls of the via openings <b>120</b>A.

0069A patterned conductive layer <b>123</b> may then be formed over the exposed top surface of the silicon interconnects <b>106</b> and within an interior side surface of the silicon interconnects <b>106</b>, as illustrated in <figref idref="DRAWINGS">FIGS. 17A-17B</figref>. In this manner, partially forming conductive layer <b>123</b> over the top surface of the silicon interconnect <b>106</b> can provide greater surface area for ohmic contact with the silicon interconnects <b>106</b>. Due to the closer proximity of the silicon interconnect <b>106</b> to the top surface of the SOI structure than the backside surface of the SOI structure, in accordance with some embodiments, it may be more efficient to form a layer of conductive layer <b>123</b> within the interior side surface of silicon interconnect <b>106</b> from above the top surface of the SOI structure as opposed to from the back surface of the SOI structure. In an embodiment, the patterned conductive layer <b>123</b> is formed by sputtering through a shadow mask. In an embodiment, the patterned conductive layer <b>123</b> includes a first layer of 500 angstrom thick titanium (Ti), a middle layer of 500 angstrom thick titanium-tungsten (TiW), and a 1 μm to 2 μm thick outer layer of gold (Au). In an embodiment, the patterned conductive layer <b>123</b> makes ohmic contact with the silicon interconnects <b>106</b>.

0070Referring now to <figref idref="DRAWINGS">FIGS. 18A-18B</figref>, a patterned conductive layer <b>122</b> may be formed on the passivation layer <b>133</b> within the via openings <b>120</b>A and in electrical contact with the patterned conductive layer <b>123</b>. Conductive layer <b>122</b> may be formed from the same or different material from conductive layer <b>123</b>, and may have the same or different thicknesses. In an embodiment, conductive layer <b>123</b> has a thicker layer of gold. Following the formation of patterned conductive layers <b>122</b>, <b>123</b>, the SOI substrate may then be diced, for example using laser dicing, to form a plurality of transfer heads each including an array of transfer heads <b>102</b>, interconnected with silicon interconnects <b>104</b>, <b>106</b> and vias <b>120</b> extending through the base substrate <b>130</b> from a backside of the base substrate to the patterned silicon layer <b>140</b>, and through the patterned silicon layer <b>140</b>, to electrically connect the silicon electrodes <b>110</b> with working circuitry of a transfer head assembly.

0071<figref idref="DRAWINGS">FIGS. 19A-28B</figref> illustrate a method of forming a bipolar micro device transfer head including backside via openings with tapered sidewalls in accordance with an embodiment of the invention. The processing sequence leading up to <figref idref="DRAWINGS">FIGS. 19A-19B</figref> may be identical to the processing sequence of <figref idref="DRAWINGS">FIGS. 6A-8B</figref>. In an embodiment illustrated in <figref idref="DRAWINGS">FIGS. 19A-19B</figref>, a patterned hardmask layer <b>150</b> is formed over the backside passivation layer <b>132</b> for pattering of the backside passivation layer. Hardmask layer <b>150</b> may be deposited with any suitable method such as chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD). In an embodiment, a 2 μm thick PECVD silicon nitride hardmask layer <b>150</b> is deposited, followed by deposition of a thick patterned positive photoresist. The hardmask layer <b>150</b> and backside passivation layer <b>132</b> are then etched using RIE to form openings stopping on the base substrate <b>130</b>. The patterned photoresist is then removed by O₂ashing followed by piranha etch and short HF dip resulting in the structure in <figref idref="DRAWINGS">FIGS. 19A-19B</figref>.

0072Referring now to <figref idref="DRAWINGS">FIGS. 20A-20B</figref>, backside via openings <b>120</b>A are then etched into the base substrate <b>130</b>. In an embodiment, single-sided wet etching is performed using a suitable etching solution such as KOH to form backside via openings <b>120</b>A with tapered sidewalls in the base substrate <b>130</b> and stopping on the buried oxide layer <b>124</b>. As illustrated, the via openings <b>120</b>A at the bottom surface of the base substrate <b>130</b> are wider or have a larger cross-section than at a top surface of the base substrate <b>130</b> at the interface with the buried oxide layer <b>124</b>. Where the base substrate <b>130</b> is (100) silicon, the KOH wet etchant may attack the silicon preferentially in the (100) plane to produce the illustrated V-etch structure. The patterned hard mask layer <b>150</b> may then be removed using a blanket nitride etching solution, as illustrated in <figref idref="DRAWINGS">FIGS. 21A-21B</figref>.

0073The following process sequence of <figref idref="DRAWINGS">FIGS. 22A-24B</figref> may be identical to that described above with regard to <figref idref="DRAWINGS">FIGS. 10A-12B</figref>, and the following process sequence of <figref idref="DRAWINGS">FIGS. 25A-28B</figref> may be identical to that described above with regard to <figref idref="DRAWINGS">FIGS. 15A-18B</figref>. It is to be appreciated that while the processing sequence for forming the final structure illustrated in <figref idref="DRAWINGS">FIGS. 28A-28B</figref> includes tapered sidewalls in backside via opening <b>120</b>A as well as a topside via opening <b>120</b>B, that a topside via opening <b>120</b>B is not required for the formation of tapered sidewalls in backside via opening <b>120</b>A.

0074<figref idref="DRAWINGS">FIGS. 29A-32B</figref> illustrate a method of forming a bipolar micro device transfer head including a replacement electrode dielectric in accordance with an embodiment of the invention. The processing sequence leading up to <figref idref="DRAWINGS">FIGS. 29A-29B</figref> may be identical to the processing sequence of <figref idref="DRAWINGS">FIGS. 6A-8B</figref> and <figref idref="DRAWINGS">FIGS. 19A-24B</figref>. Referring now to <figref idref="DRAWINGS">FIGS. 29A-29B</figref>, in an embodiment openings are formed in the top dielectric layer <b>118</b> directly above the backside via openings <b>120</b>A and directly over the mesa structures <b>112</b>. In the particular embodiment illustrated, the dielectric layer <b>118</b> is not completely removed from between the adjacent mesa structures <b>112</b> in a bipolar electrode transfer head <b>102</b>. Openings may be formed in top dielectric layer <b>118</b> with a thick patterned positive photoresist, followed by dry etching of the top dielectric layer <b>118</b>. The patterned photoresist is then removed by O₂ashing followed by piranha etch. Openings are then formed in the silicon layer <b>140</b> and buried oxide layer <b>124</b> to form a topside via opening <b>120</b>B which connects with backside via opening <b>120</b>A. Openings may be formed in the silicon layer <b>140</b> and buried oxide layer <b>124</b> by forming a thick patterned positive photoresist, followed by DRIE of the silicon layer <b>140</b> stopping on the buried oxide layer <b>124</b>, followed by RIE through the buried oxide layer <b>124</b>. The patterned photoresist is then removed by O₂ashing followed by piranha etch resulting in the structure in <figref idref="DRAWINGS">FIGS. 29A-29B</figref>.

0075A patterned conductive layer <b>123</b> is then formed over the exposed top surface of the silicon interconnects <b>106</b> and within an interior side surface of the silicon interconnects <b>106</b>, as illustrated in <figref idref="DRAWINGS">FIGS. 30A-30B</figref>. In this manner, partially forming conductive layer <b>123</b> over the top surface of the silicon interconnect <b>106</b> can provide greater surface area for ohmic contact with the silicon interconnects <b>106</b>. Due to the closer proximity of the silicon interconnect <b>106</b> to the top surface of the SOI structure than the backside surface of the SOI structure, in accordance with some embodiments, it may be more efficient to form a layer of conductive layer <b>123</b> within the interior side surface of silicon interconnect <b>106</b> from above the top surface of the SOI structure as opposed to from the back surface of the SOI structure. In an embodiment, the patterned conductive layer <b>123</b> is formed by sputtering through a shadow mask. In an embodiment, the patterned conductive layer <b>123</b> includes a first layer of 500 angstrom thick titanium (Ti), a middle layer of 500 angstrom thick titanium-tungsten (TiW), and a 1 μm to 2 μm thick outer layer of gold (Au). In an embodiment, the patterned conductive layer <b>123</b> makes ohmic contact with the silicon interconnects <b>106</b>.

0076A patterned conductive layer <b>122</b> may be formed on the passivation layer <b>133</b> within the via openings <b>120</b>A and in electrical contact with the patterned conductive layer <b>123</b> as illustrated in <figref idref="DRAWINGS">FIGS. 31A-31B</figref>. Conductive layer <b>122</b> may be formed from the same or different material from conductive layer <b>123</b>, and may have the same or different thicknesses. In an embodiment, conductive layer <b>123</b> has a thicker layer of gold. Conductive layers <b>122</b>, <b>123</b> may form a continuous conductive layer along the via <b>120</b> side surfaces.

0077Referring now to <figref idref="DRAWINGS">FIGS. 32A-32B</figref>, a second dielectric layer may be blanket deposited over the top surface of the patterned SOI stack, while providing backside protection. As illustrated the second dielectric layer <b>126</b> is formed on the mesa structures <b>112</b>, on dielectric layer <b>118</b> and in the vias <b>120</b>. In an embodiment, the second dielectric layer <b>126</b> is formed within the via opening <b>120</b> adjacent the patterned silicon layer <b>140</b>. In an embodiment, the second dielectric layer may have a higher dielectric constant or dielectric breakdown strength than dielectric layer <b>118</b>, and has a thickness between 0.5 μm-10 μm. For example, the second dielectric layer <b>126</b> a layer of Al₂O₃, Ta₂O₅, or HfO₂deposited by atomic layer deposition (ALD). Following the formation of dielectric layer <b>126</b>, the SOI substrate may then be diced, for example using laser dicing, to form a plurality of transfer heads.

0078In accordance with embodiments of the invention, the dielectric layer <b>118</b> or <b>126</b> covering the mesa structures <b>112</b> has a suitable thickness and dielectric constant for achieving the required grip pressure for the micro device transfer head, and sufficient dielectric strength to not break down at the operating voltage. <figref idref="DRAWINGS">FIG. 33</figref> is a flow chart illustrating a method of picking up and transferring an array of micro devices from a carrier substrate to a receiving substrate in accordance with an embodiment of the invention. At operation <b>3310</b> an array of transfer heads is positioned over an array of micro devices on a carrier substrate. <figref idref="DRAWINGS">FIG. 34</figref> is a cross-sectional side view illustration of an array of micro device transfer heads <b>102</b> positioned over an array of micro devices on a carrier substrate <b>200</b> in accordance with an embodiment of the invention. At operation <b>3320</b> the array of micro devices are contacted with the array of transfer heads. In an alternative embodiment, the array of transfer heads is positioned over the array of micro devices with a suitable air gap separating them which does not significantly affect the grip pressure, for example, 1 nm to 10 nm. <figref idref="DRAWINGS">FIG. 35</figref> is a cross-sectional side view illustration of an array of micro device transfer heads <b>102</b> in contact with an array of micro devices <b>202</b> in accordance with an embodiment of the invention. As illustrated, the pitch of the array of transfer heads <b>202</b> is an integer multiple of the pitch of the array of micro devices <b>202</b>. At operation <b>3330</b> a voltage is applied to the array of transfer heads <b>102</b>. The voltage may be applied from the working circuitry within a transfer head assembly <b>160</b> in electrical connection with the array of transfer heads through vias <b>120</b>. At operation <b>3340</b> the array of micro devices is picked up with the array of transfer heads. <figref idref="DRAWINGS">FIG. 36</figref> is a cross-sectional side view illustration of an array of transfer heads <b>102</b> picking up an array of micro devices <b>202</b> in accordance with an embodiment of the invention. At operation <b>3350</b> the array of micro devices is then released onto a receiving substrate. For example, the receiving substrate may be, but is not limited to, a display substrate, a lighting substrate, a substrate with functional devices such as transistors or ICs, or a substrate with metal redistribution lines. <figref idref="DRAWINGS">FIG. 37</figref> is a cross-sectional side view illustration of an array of micro devices <b>202</b> released onto a receiving substrate <b>300</b> in accordance with an embodiment of the invention.

0079While operations <b>3310</b>-<b>3350</b> have been illustrated sequentially in <figref idref="DRAWINGS">FIG. 33</figref>, it is to be appreciated that embodiments are not so limited and that additional operations may be performed and certain operations may be performed in a different sequence. For example, in one embodiment, an operation is performed to create a phase change in a bonding layer connecting the micro device to the carrier substrate prior to or while picking up the micro device. For example, the bonding layer may have a liquidus temperature less than 350° C., or more specifically less than 200° C. The bonding layer may be formed of a material which provides adhesion to the carrier substrate, yet also a medium from which the micro device is readily releasable. In an embodiment, the bonding layer is a material such as indium or an indium alloy. If a portion of the bonding layer is picked up with the micro device, additional operations can be performed to control the phase of the portion of the bonding layer during subsequent processing. For example, heat can be applied to the bonding layer from a heat source located within the transfer head assembly <b>160</b>, carrier substrate <b>200</b>, and/or receiving substrate <b>300</b>.

0080Furthermore, operation <b>3330</b> of applying the voltage to create a grip pressure on the micro devices can be performed in various orders. For example, the voltage can be applied prior to contacting the array of micro devices with the array of transfer heads, while contacting the micro devices with the array of transfer heads, or after contacting the micro devices with the array of transfer heads. The voltage may also be applied prior to, while, or after creating a phase change in the bonding layer.

0081Where the transfer heads <b>102</b> include bipolar silicon electrodes, an alternative voltage is applied across a the pair of silicon electrodes in each transfer head <b>102</b> so that at a particular point in the when a negative voltage is applied to one silicon electrode, a positive voltage is applied to the other silicon electrode in the pair, and vice versa to create the pickup pressure. Releasing the micro devices from the transfer heads <b>102</b> may be accomplished with a varied of methods including turning off the voltage sources, lower the voltage across the pair of silicon electrodes, changing a waveform of the AC voltage, and grounding the voltage sources.

0082In accordance with embodiments of the invention, manners of forming an array of transfer heads and manners for operating an array of transfer heads to transfer an array of micro devices have been described. Embodiments of the invention may be utilized to transfer a variety of micro devices such as, but not limited to, diodes, LEDs, transistors, ICs, and MEMS. In an embodiment, the array of transfer heads may be utilized to transfer an array of micro LED devices which are poised for pick up, such as the structures described in U.S. patent application Ser. No. 13/372,222 and U.S. patent application Ser. No. 13/458,932, both of which are incorporated herein by reference.

0083In utilizing the various aspects of this invention, it would become apparent to one skilled in the art that combinations or variations of the above embodiments are possible for forming a micro device transfer head and head array, and for transferring a micro device and micro device array. Although the present invention has been described in language specific to structural features and/or methodological acts, it is to be understood that the invention defined in the appended claims is not necessarily limited to the specific features or acts described. The specific features and acts disclosed are instead to be understood as particularly graceful implementations of the claimed invention useful for illustrating the present invention.