US8405069B2

Printable thin-film transistors with high dielectric constant gate insulators and methods for producing same

Summary by NHIP

OTFTs with ligand-coated oxide nanoparticles

The gated electronic device includes an organic thin-film transistor featuring a gate insulator layer of nanocomposites with metal oxide nanoparticles coated by phosphonic acid organic ligands. Substrates comprise highly doped silicon or ITO-coated glass, and one embodiment deposits pentacene using a thermal evaporator.

Claim Score by NHIP

Read claim 1, the broadest

Abstract

Disclosed are embodiments of organic thin-film transistors (OTFT) with a gate insulator layer comprised of nanocomposites incorporating metal oxide nanoparticles coated by organic ligands and methods of fabricating such OTFTs. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

US8405069B2, drawing sheet 1
Sheet 1 of 88

Term

Projected expiry 7 August 2029.

  1. Priority
  2. Filed
  3. Granted
  4. Today
  5. Projected expiry

30 claims: 2 independent, 28 dependent

  1. 1
    Broadest claimClaim Score 78, broad(NHIP)A gated electronic device comprised of:an organic thin-film transistor (OTFT), wherein the OTFT is further comprised of, at least one gate insulator layer, wherein the at least one gate insulator layer is comprised of nanocomposites incorporating metal oxide nanoparticles coated by phosphonic acid organic ligands, and at least one organic semiconductor layer.
  2. 20
    A method of fabricating an organic thin film transistor comprising:deposition of at least one organic semiconductor layer substantially on top of a substrate;deposition of at least one at least one gate insulator layer and a gate electrode substantially on top of the at least one organic semiconductor layer;wherein the at least one gate insulator layer is comprised of nanocomposites incorporating metal oxide nanoparticles coated by phosphonic acid organic ligands;and deposition a first conductive film as a source electrode capped with a film of a second conductive film as a drain electrode through a shadow mask.