US8044594B2

Power supply ignition system and method

Summary by NHIP

Plasma power control system

The system controls a plasma generator using feedback signals to adjust power levels. It reduces or removes power, then increases voltage to a threshold before modulating it back to an initial level.

Claim Score by NHIP

Read claim 17, the broadest

Abstract

One embodiment comprises a plasma processing system having a plasma chamber, a generator, a feedback component, and a controller. The feedback component is adapted to receive at least one first signal having a level dependent upon the power signal supplied from the generator to the chamber. A feedback output is adapted to emit a second signal to the controller, which is adapted to supply a third signal to the power generator. The third signal is configured to control the power generator to supply the power signal at a power level for a particular processing application. The power generator is further controlled by the controller to one of reduce and remove power from the plasma processing chamber and subsequently increase the voltage level until the power level reaches a threshold level. The power generator is further controlled to subsequently modulate the voltage until the voltage returns to a first voltage level.

US8044594B2, drawing sheet 1 — Sheet 1 of 4

Term

3.6 yearsleft in the term

Expires 13 May 2030, including 393 days of term adjustment.

19 claims: 3 independent, 16 dependent

1
A plasma processing system comprising, a plasma chamber;a power generator comprising an output adapted to supply a power signal to the plasma chamber;a feedback component comprising, at least one input, each of the at least one inputs adapted to receive at least one first signal having a first signal level dependent upon the power signal, and an output adapted to emit a second signal having a second signal level;and a controller adapted to, receive the second signal, and supply a third signal to the power generator, the third signal, having a third signal level dependent upon the second signal level, and configured to control the power generator to, supply the power signal at a power level comprising a first power level and a first voltage level for a particular processing application, one of reduce and remove the power from the plasma processing chamber, increase, subsequent to the power being one of reduced and removed, the voltage level until the power level reaches a threshold level, and modulate, subsequent to the threshold level being reached, the voltage until the voltage level returns to the first voltage level.
9
A method of supplying power to a plasma chamber comprising, applying voltage at a first voltage level from a power generator to a plasma chamber, the first voltage level corresponding to a first power level;storing the first power level in a memory device;reducing the voltage applied to the plasma chamber from the first voltage level to a second voltage level corresponding to a second power level;increasing the voltage to a new voltage level;measuring a new power level corresponding to the new voltage level;determining whether the measured power level is less than a threshold power level;one of (i) increasing the voltage from the measured voltage level to higher voltage level when the measured power level is less than the threshold power level, and (ii) modulating the voltage until the voltage level returns to the first voltage level when the measured power level is not less than the threshold power level.
17
Broadest claimClaim Score 54, average(NHIP)A power supply for applying power to a plasma processing chamber, the power supply comprising:a power generator configured to generate the power applied to the plasma processing chamber;a feedback component comprising at least one of hardware, firmware, and software configured to provide a signal indicative of a power level that the power generator applies to the plasma chamber;and a controller comprising at least one of hardware, firmware, and software configured to control the power generator to, apply power at a particular power level and a particular voltage level for a particular processing application, reduce or remove the power from the plasma processing chamber, increase, subsequent to the power being reduced or removed, the voltage level applied to the plasma chamber until the voltage level reaches a threshold level, and modulate, subsequent to the threshold level being reached, the voltage until the voltage level returns to the particular voltage level again.

Independent claims3

32 paragraphs in 6 sections, as filed

PRIORITY

This application claims the benefit of Provisional U.S. Patent Application No. 61/085,392 filed on Jul. 31, 2008. The details of Application No. 61/085,392 are incorporated by reference into the present application in its entirety and for all proper purposes.

FIELD OF THE INVENTION

The present invention generally relates to a plasma processing environment. In particular, but not by way of limitation, embodiments of the present invention relate to a system and method for controlling the application of voltage and power to a plasma chamber.

BACKGROUND OF THE INVENTION

In order for plasma to form in a plasma chamber during the creation of thin film or other applications, a power generator often creates an electric potential between a cathode and anode within the plasma chamber. This causes ignition of a processing gas into the plasma. The plasma then acts upon the cathode to create the thin film upon a substrate within the chamber.

Although the creation of plasma through the use of a potential between a cathode and an anode enables creation of the thin film or other application, using a cathode and anode in such a manner often creates electrical discharges or arcs. Arcing can occur through other methods as well. An electric arc is an electrical breakdown of a gas which produces an ongoing plasma discharge. Arc discharges are undesirable because they can create non-uniformities in the thin film coating, thereby lowering the quality of the processed film.

SUMMARY OF THE INVENTION

Exemplary embodiments of the present invention that are shown in the drawings are summarized below. These and other embodiments are more fully described in the Detailed Description section. It is to be understood, however, that there is no intention to limit the invention to the forms described in this Summary of the Invention or in the Detailed Description. One skilled in the art can recognize that there are numerous modifications, equivalents and alternative constructions that fall within the spirit and scope of the invention as expressed in the claims.

One embodiment of the invention comprises a plasma processing system. One plasma processing system comprises a plasma chamber, a power generator, a feedback component, and a controller. One power generator comprises an output adapted to supply a power signal to the plasma chamber. One feedback component comprises (i) at least one input adapted to receive at least one first signal having a first signal level dependent upon the power signal and (ii) an output adapted to emit a second signal having a second signal level. One controller is adapted to receive the second signal and supply a third signal to the power generator, the third signal (i) having a third signal level dependent upon the second signal level, and (ii) configured to control the power generator to (a) apply the power signal at a power level comprising a first power level and a first voltage level for a particular processing application, (b) one of reduce and remove power from the processing chamber, (c) after the power is one of reduced and removed, increase the voltage level until the power level reaches a threshold level, and (d) after the threshold level is reached, modulate the voltage until the voltage level returns to the first voltage level.

Another embodiment of the invention comprises a method of supplying power to a plasma chamber. One method comprises applying voltage from a power generator to a plasma chamber at a first voltage level corresponding to a first power level and storing the first power level in a memory device. The voltage is then reduced from the first voltage level to a second voltage level corresponding to a second power level. Voltage is then increased to a new voltage level. A new power level corresponding to the new voltage level is then measured. It is then determined whether the measured power level is less than a threshold power level. In one embodiment, the threshold power level comprises the first power level. When the measured power level is not less than the threshold power level, the voltage is modulated until the voltage level returns to the first voltage level. When the measured power level is less than the threshold power level, the voltage is increased to a higher voltage level corresponding to a higher new power level.

Yet another embodiment of the invention comprises a power supply for applying power to a plasma processing chamber. One power supply comprises a power generator configured to generate the power applied to the plasma processing chamber, a feedback component comprising at least one of hardware, firmware, and software configured to provide a signal indicative of a power level that the power generator applies to the plasma chamber, and a controller comprising at least one of hardware, firmware, and software configured to control the power generator. The power generator is controlled to (i) apply power at a particular power level and a particular voltage for a particular processing application, (ii) reduce or remove the power from the plasma processing chamber, (iii) increase, subsequent to the power being reduced or removed, a voltage level applied to the plasma chamber until the power reaches a threshold level, and (iv) modulate, subsequent to the threshold level being reached, the voltage until the voltage level returns to the particular voltage level again.

These and other embodiments are described in further detail herein.

BRIEF DESCRIPTION OF THE DRAWINGS

Various objects and advantages and a more complete understanding of the present invention are apparent and more readily appreciated by reference to the following Detailed Description and to the appended claims when taken in conjunction with the accompanying Drawings, wherein:

<figref idrefs="DRAWINGS">FIG. 1</figref> is a functional block diagram of a portion of a plasma processing system in accordance with an illustrative embodiment of the invention;

<figref idrefs="DRAWINGS">FIG. 2</figref> is a flow chart comprising a method of supplying power to a plasma chamber in accordance with an illustrated embodiment of the invention.

<figref idrefs="DRAWINGS">FIG. 3A</figref> is a graph displaying a power generator power level output as a function of time in accordance with an illustrative embodiment of the invention.

<figref idrefs="DRAWINGS">FIG. 3B</figref> is a graph displaying a power generator voltage level output as a function of time in accordance with an illustrative embodiment of the invention.

DETAILED DESCRIPTION

Referring now to the drawings, where like or similar elements are designated with identical reference numerals throughout the several views where appropriate, and referring in particular to <figref idrefs="DRAWINGS">FIG. 1</figref>, shown is a functional block diagram of a portion of a plasma processing system 100 in accordance with an illustrative embodiment of the invention. The portion of the plasma processing system 100 shown in <figref idrefs="DRAWINGS">FIG. 1</figref> comprises a power generator 110, a plasma chamber 120, a feedback component 130, and a controller 140.

The feedback component 130 in one embodiment is comprised of at least one input and an output. The at least one input is adapted to receive at least one first signal 115 and the output is adapted to emit a second signal 125. The controller 140 is adapted to receive the second signal 125 and provide a third signal 135 to the power generator 110.

One power generator 110 may be comprised of a low frequency generator, a mid-frequency generator, a DC generator, or a radio frequency (RF) generator. Furthermore, the power generator 110 comprises an output electronically coupled to and adapted to provide power to the plasma chamber 120. The power generator 110 generally provides power to the plasma chamber 120 via a power signal 105 adapted to ignite and sustain a plasma in the chamber 120 for plasma processing (e.g., reactive or non-reactive plasma processing). Although not required, in many embodiments the generator 110 may be configured to operate in a frequency range between 33 kHz and 100 kHz. By way of further example, one generator 110 may be comprised of a CRYSTAL model generator, which is available from Advanced Energy Incorporated in Fort Collins, Colo.

In one embodiment, the power signal 105 is comprised of a power signal level corresponding to an amount of power being supplied to the plasma chamber. Furthermore, the at least one first signal 115 may be comprised of two signals, each first signal comprising a first signal level dependent upon the power signal level. One first signal may be adapted to be received by a current sensor 150 and the other first signal may be adapted to be received by a voltage sensor 160. Although not depicted in <figref idrefs="DRAWINGS">FIG. 1</figref>, one of ordinary skill in the art will readily appreciate that the sensors 150, 160 may include a transducer, electronics, and processing logic (e.g., instructions embodied in software, hardware, firmware or a combination thereof).

The current and voltage sensors 150, 160 may be adapted to output a fourth signal 145. The fourth signal 145 may be digital or analog. For example, the current sensor 150 may output a fourth signal 145 comprising a current level of the power signal 105, while the voltage sensor 160 may output a fourth signal 145 comprising a voltage level of the power signal 105. The one or more fourth signals 145 may be received by a multiplier 170 adapted to provide the second signal 125 to the controller 140. One second signal 125 may comprise a signal indicative of the power signal level that is sent to the plasma chamber 120 by the generator 110.

The third signal 135 in one embodiment is a control signal dependent upon a second signal level. The third signal 135 may be configured to control the power generator 110. For example, one third signal is configured to control the power generator 110 to apply the power signal 105 at a power level comprising a first power level 302 and a first voltage level 304 (as shown in <figref idrefs="DRAWINGS">FIGS. 3A & 3B</figref>) to the plasma chamber 120 for a particular processing application such as, but not limited to, creating a film on a glass substrate. The power generator 110 may be configured to then one of reduce and remove the power from the processing chamber 120 and subsequent to the one of reducing and removing power, increasing voltage until the power reaches a threshold level at which point voltage is modulated until voltage returns to the first voltage level 304.

The illustrated arrangement of the components in <figref idrefs="DRAWINGS">FIG. 1</figref> is logical and not meant to be an actual hardware diagram; thus, the components can be combined or further separated in an actual implementation. For example, the functionality of one or both of the sensors 150, 160 may be implemented with components of the multiplier 170 and/or the controller 140. Additionally, one or more of the sensors 150, 160, multiplier 170, and the controller 140 may be entirely contained within a housing of the generator 110. Such an embodiment may comprise a plasma power adjustment device. Moreover, it should be recognized that the components included in <figref idrefs="DRAWINGS">FIG. 1</figref> depict an exemplary implementation, and in other embodiments, some components may be omitted and/or other components added.

In some embodiments for example, a matching network may be disposed between the generator 110 and the chamber 120 to transform a chamber impedance (which can vary with the frequency of the applied voltage, a chamber pressure, the composition of the gas within the chamber 120, and the target or substrate material contained within the chamber 120) to an ideal load for the power generator 110. Furthermore, it is contemplated that at least one of the feedback component 130 and the controller 140 may be comprised of software, firmware, hardware, and/or a combination of one or more.

In several embodiments, the system depicted in <figref idrefs="DRAWINGS">FIG. 1</figref> includes arc detection and arc management components to detect and abate arcing that may occur during processing. The controller 140, for example, may be comprised of a processor adapted to use the second signal 125 in detecting an arc in the chamber 120 and subsequently initiating an arc management response to the generator 110 in order to extinguish the arc. U.S. patent application Ser. No. 11/873,403, entitled Arc Detection and Handling in Radio Frequency Power Applications, and U.S. application Ser. No. 11/531,599, entitled System and Method for Managing Power Supplied to a Plasma Chamber, provide additional details relative to arc management functionality.

Referring next to <figref idrefs="DRAWINGS">FIG. 2</figref>, shown is a flowchart depicting an exemplary method of supplying power to the plasma chamber 120 that may be carried out while utilizing the system 100 depicted in <figref idrefs="DRAWINGS">FIG. 1</figref>. As depicted at 201, the power generator 110 applies voltage at a first voltage level 304 corresponding to a first power level 302 to the plasma processing chamber 120. In many embodiments, the first power and first voltage levels 302, 304 are selected to achieve a desired processing result. In the context of glass coating, for example, the power and voltage levels may be selected so that a target material is deposited on a glass substrate so as to produce a clear film on the glass substrate at a relatively high rate of deposition (this mode of operation is often referred to as a transition region of operation). Referring to <figref idrefs="DRAWINGS">FIGS. 3A and 3B</figref>, which depict exemplary power and voltage characteristics that may be experienced by the system depicted in <figref idrefs="DRAWINGS">FIG. 1</figref> undergoing the method depicted in <figref idrefs="DRAWINGS">FIG. 2</figref>, shown are a first power level 302 and a first voltage level 304 operating during a first period of time t1.

Referring now to <figref idrefs="DRAWINGS">FIGS. 2-3B</figref>, at 203 the first power level 302 is stored in a memory device (e.g., memory, not shown, that may be coupled to the controller 140 or another component) before, at 205, voltage to the plasma chamber 120 is subsequently reduced or removed at time t2 to a second voltage level 314 corresponding to a second power level 312. In many embodiments for example, the voltage applied to the plasma chamber 120 is reduced or removed in response to an arc that is detected within the chamber 120. Voltage to the chamber 120 may also be reduced or removed for other reasons such as, but not limited to, routine system maintenance.

At 207, a new voltage level 324 corresponding to a new power level 322 is applied to the chamber 120 at time t3 (e.g., after an arc is extinguished). The new power level 322 that is applied to the plasma chamber 120 is then measured at 209 and compared at 211 to a threshold power level 342′, 342″. As seen in <figref idrefs="DRAWINGS">FIG. 3A</figref>, the threshold power level may be greater than the first power level, as shown by reference numeral 342′, or less than the first power level, as shown by reference numeral 342″. In one embodiment, when it is determined that the measured power level is less than the threshold power level 342′, 342″, the voltage is increased at 213 during time t4. In one embodiment, the voltage may be increased to a voltage limit for the generator 110. At time t5, the method returns to step 209 where the power level is measured and at 211 it is determined whether the power is at least as great as the threshold power level 342′ 342″. It is to be appreciated that the increase and decrease in voltage and power levels in <figref idrefs="DRAWINGS">FIGS. 3A and 3B</figref> during times t4 and elsewhere are only meant to be representative and actual rates of increase of the voltage and power levels may vary substantially.

In one embodiment, when the measured power level (e.g., power levels 322 and 332) is not less than the threshold power level 342′ 342″, the voltage is modulated until the voltage level returns to the first voltage level 304. For example, at time t6, the voltage may be decreased to the first voltage level 304 in order for the power to return to the first power level 302, at which time the method returns to step 201.

As shown in <figref idrefs="DRAWINGS">FIGS. 3A & 3B</figref>, the threshold power level 342 may be greater than or less than the first power level 302. One threshold level 342 comprises a power level adapted to ignite the plasma. As shown in <figref idrefs="DRAWINGS">FIG. 3A</figref>, one threshold power level 342″ may be about 75% of the first power level 302 or the threshold power level 342′ may be about 125% of the first power level 302. The threshold level 342 varies depending upon preference or other engineering considerations. The threshold power level 342 may also be substantially equal to the first power level 302 in one embodiment.

The threshold power level 342 may comprise a plasma ignition power level. Therefore, in one embodiment, the plasma may ignite at a power level lower or higher than the first power level 302. In such an embodiment(s), the voltage is modulated, subsequent to ignition, towards a voltage level corresponding to the first power level 302. One voltage level may be the first voltage level 304.

As one of ordinary skill in the art will appreciate, before plasma in the chamber 120 is ignited, the current drawn by the chamber 120 in one embodiment may be low; thus, if power level 322 is lower than the designated threshold level 342, the controller 140 may determine that the plasma has not ignited. As a consequence, in response to the second signal 125, the controller 140 may provide a third signal 135 to the power generator 110 which increases the voltage to voltage level 334 adapted to overcome the generator impedance. As shown in <figref idrefs="DRAWINGS">FIGS. 3A & 3B</figref>, as the voltage is incrementally increased, the power may perform a step increase upon a decrease in the chamber impedance.

It should be recognized that unlike prior approaches that employ one or more strike voltages (e.g., short voltage pulse(s)) to reignite the plasma, several embodiments of the present invention increase the voltage that is applied to the chamber 120 in a controlled manner which utilizes the power level in regulating the application of the voltage. As a consequence, unlike the application of an aggressive strike voltage that is prone to initiating an arc (and potentially an “arc-ignition loop”), these embodiments provide a more controlled recovery (e.g., from an arcing event) that is less prone to plasma instability problems.

In conclusion, the present invention provides, among other things, a system and method for controlling the application of voltage and power to a plasma chamber 120 during ignition of the plasma. Those skilled in the art can readily recognize that numerous variations and substitutions may be made in the invention, its use and its configuration to achieve substantially the same results as achieved by the embodiments described herein. Accordingly, there is no intention to limit the invention to the disclosed exemplary forms. Many variations, modifications and alternative constructions fall within the scope and spirit of the disclosed invention as expressed in this disclosure.

Contents6

Every citation, both waysCites: the store holds 110 of 111

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Priority claims6

Priority claims
Document	Office	Kind	Date
8539208	United States of America	P	2008-07-31
8539208	United States of America	P	2008-07-31
42413809	United States of America	A	2009-04-15
61085392	–	–	–
US20080085392P	–	–	–
US20090424138	–	–	–

Members8

Family members, oldest first
Document	Office	Kind
US2010026186A1	United States of America	A1	2010-02-04
WO2010014451A2	World Intellectual Property Organization (WIPO)	A2	2010-02-04
WO2010014451A3	World Intellectual Property Organization (WIPO)	A3	2010-04-29
WO2010014451A3	World Intellectual Property Organization (WIPO)	A3	2010-04-29
EP2314136A2	European Patent Office (EPO)	A2	2011-04-27
US8044594B2This record	United States of America	B2	2011-10-25
EP2314136A4	European Patent Office (EPO)	A4	2016-02-17
EP2314136B1	European Patent Office (EPO)	B1	2019-02-20

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2009-04-15	Initial Exam Team nnIEXX	IEXX

7 legal events, as the office reported them to INPADOC

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Point at a mark for the event

Events

Legal events, newest first
	Event	Code
2023-04-12	Maintenance fee paymentMAFP	MAFP
2019-04-18	Maintenance fee paymentMAFP	MAFP
2017-10-30	AssignmentAS	AS
2015-04-27	Fee paymentFPAY	FPAY
2011-10-05	Information on status: patent grantGrantedPATENTED CASESTCF	STCF
2009-11-11	AssignmentAS	AS
2009-11-11	AssignmentAS	AS