US8039859B2

Semiconductor light emitting devices including an optically transmissive element

Summary by NHIP

Variable Thickness Optically Transmissive Element

The semiconductor light emitting device includes a light emitting diode, cured encapsulant, and an optically transmissive element on the encapsulant upper surface. The optically transmissive element features a thickness at the middle region greater than at the sidewall, maintaining a correlated color temperature variation of less than 2000 K across a 180-degree emission angle range.

Claim Score by NHIP

Read claim 1, the broadest

Abstract

Methods of packaging a semiconductor light emitting device include dispensing a first quantity of encapsulant material into a cavity including the light emitting device. The first quantity of encapsulant material in the cavity is treated to form a hardened upper surface thereof having a shape. A luminescent conversion element is provided on the upper surface of the treated first quantity of encapsulant material. The luminescent conversion element includes a wavelength conversion material and has a thickness at a middle region of the cavity greater than proximate a sidewall of the cavity.

US8039859B2, drawing sheet 1
Sheet 1 of 21

Term

Term ended

Expired 10 February 2025, 1.6 years ago.

  1. Priority
  2. Filed
  3. Granted
  4. Expired
  5. Today

11 claims: 1 independent, 10 dependent

  1. 1
    Broadest claimClaim Score 60, broad(NHIP)A semiconductor light emitting device, comprising:a light emitting device;a first quantity of cured encapsulant material on the light emitting device;and an optically transmissive element on an upper surface of the first quantity of encapsulant material;and wherein at least on of the first quantity of cured encapsulant material or the optically transmissive element include a wavelength conversion material and wherein the semiconductor light emitting device exhibits a variation of correlated color temperature across a 180 (+/−90 from central axis)-degree range of emission angles of less than 2000 K.