Methods of forming a conductive interconnect in a pixel of an imager and in other integrated circuitry

RELATED PATENT DATA

0001This application is a divisional of U.S. patent application Ser. No. 11/857,962, which was filed on Sep. 19, 2007, now U.S. Pat. No. 7,531,373 entitled “Methods of Forming a Conductive Interconnect in a Pixel of an Imager and in Other Integrated Circuitry”, naming Xiaofeng Fan as the inventor which is incorporated herein by reference.

TECHNICAL FIELD

0002Embodiments disclosed herein pertain to methods of forming a conductive interconnect in a pixel of an imager and in other integrated circuitry.

BACKGROUND

0003Solid state imaging devices, including charge coupled devices (CCD), complementary metal oxide semiconductor (CMOS) imaging devices, and others, have been used in photo imaging applications. A solid state imaging device circuit often includes a focal plane array of pixels as an image sensor, with each pixel including a photosensor which may be a photogate, a photoconductor, a photodiode, or other device having a doped semiconductive region for accumulating photo-generated charge. For CMOS imaging devices, each pixel has a charge storage region formed on or in the substrate which is connected to the gate of an output transistor that is part of a readout circuit. The charge storage region may be constructed as a floating diffusion region. In some CMOS imaging devices, each pixel may further include at least one electronic device, such as a transistor, for transferring charge from the photosensor to the storage region and one device, also typically a transistor, for resetting the storage region to a predetermined charge level. Further and regardless, in CMOS and other imaging devices, some components of a pixel might be shared with other pixels.

0004In a CMOS imaging device, the active elements of a pixel perform the functions of: (1) photon to charge conversion; (2) accumulation of image charge; (3) resetting the storage region to a known state; (4) transfer of charge to the storage region; (5) selection of a pixel for readout; and (6) output and amplification of a signal representing pixel charge. Photo charge may be amplified when it moves from the initial charge accumulation region to the storage region. The charge at the storage region is typically converted to a pixel output voltage by a source follower output transistor.

0005CMOS imaging devices of the type discussed above are generally known and discussed, for example, in U.S. Pat. Nos. 6,140,630; 6,376,868; 6,310,366; 6,326,652; 6,204,524; and 6,333,205.

0006In order to capture images with greater resolution while also maintaining a small image sensor, it is desirable to design image sensors with a large number of relatively small pixels. As pixels become smaller, however, many of the transistors responsible for reading out the pixel signal cannot practically be made smaller, and begin to take up most of the space allocated to a single pixel. Consequently, the photosensor of the pixel becomes smaller while more of the pixel area is used by the pixel transistors such that the pixel fill factor, which is the percentage of a pixel that is photosensitive, is reduced. As photosensor size and pixel fill factor shrink, the amount of light that is converted to a signal within each pixel decreases as well.

0007Further, each pixel encompasses multiple metal routing layers typically formed above the photosensor and transistor gates, and which are used to convey signals, e.g., control signals, for the readout circuits between the various transistors of the pixel. As pixels are made smaller, these metal routing layers become more obstructive to light that would otherwise reach the pixel photosensor. When connecting, for example, a Metal 2 level line to a pixel component received below the Metal 1 level routing layer, an electrically isolated Metal 1 island is used as a conductive interconnect between a conductive via from Metal 2 to the island and a conductive contact from the Metal 1 island to the pixel component therebelow. The conductive Metal 1 island can require spacing of Metal 1 lines within the pixel further apart, thereby reducing the metal opening size over the photodiode of an individual pixel.

BRIEF DESCRIPTION OF THE DRAWINGS

0008<figref idref="DRAWINGS">FIG. 1</figref> is a schematic of an imager pixel, with methods of fabricating such comprising an embodiment of the invention.

0009<figref idref="DRAWINGS">FIG. 2</figref> is a diagrammatic top layout of an example imager pixel of the <figref idref="DRAWINGS">FIG. 1</figref> schematic, with methods of fabricating such comprising an embodiment of the invention.

0010<figref idref="DRAWINGS">FIGS. 3-12</figref> illustrate method embodiments of the invention.

0011<figref idref="DRAWINGS">FIGS. 13 and 14</figref> illustrate additional method embodiments of the invention.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

0012Example methods of forming one or more conductive interconnects in an imager pixel, or in other integrated circuitry, which comprises multilevel metal routing layers are described in connection with <figref idref="DRAWINGS">FIGS. 1-14</figref>. The embodiments are principally described in relation to a CMOS imaging device for convenience. However, they have wider applicability to pixels of other imaging devices and independent of the photosensor which might be used. Further, embodiments of the invention include methods of forming conductive interconnects and integrated circuitry comprising multilevel metal routing layers which are not necessarily encompassed by an imager.

0013Referring initially to <figref idref="DRAWINGS">FIGS. 1 and 2</figref>, a pixel <b>300</b> of an imager, for example a CMOS imager, is depicted. <figref idref="DRAWINGS">FIG. 1</figref> is but one example schematic of a single CMOS imager pixel, and <figref idref="DRAWINGS">FIG. 2</figref> is but one example top layout view of a CMOS imager pixel of the <figref idref="DRAWINGS">FIG. 1</figref> schematic. Other layouts and schematics of an imager pixel are also of course contemplated. Further and accordingly, multiple pixels might share components with other pixels, for example containing sets of pixels which share readout or other pixel circuitry. The term “pixel”, as used herein, refers to a photo-element unit cell containing at least a photosensor for converting photons to an electrical signal, and which includes multilevel metal routing layers above the photosensor and which form a part of the pixel and may connect with or be shared by other pixels.

0014<figref idref="DRAWINGS">FIGS. 1 and 2</figref> essentially depict a finished construction of an example CMOS image sensor pixel <b>300</b>. Such includes a photosensor <b>302</b> (e.g., a photodiode, photogate, etc.) a transfer transistor <b>304</b>, a floating diffusion region FD, a reset transistor <b>306</b>, a source follower transistor <b>310</b>, and row select transistor <b>312</b>. Transfer transistor <b>304</b> comprises a gate <b>303</b>, a source <b>305</b>, and a drain <b>307</b>. Photosensor <b>302</b> connects between ground <b>301</b> and source <b>305</b> of transfer transistor <b>304</b>. Photosensor <b>302</b> is thereby connected to floating diffusion region FD by transfer transistor <b>304</b> when transfer gate <b>303</b> is activated by a transfer control signal TX.

0015Reset transistor <b>306</b> comprises a source <b>309</b>, a gate <b>311</b>, and a drain <b>313</b>. Floating diffusion region FD connects with source <b>309</b> of reset transistor <b>306</b>, and a voltage supply line <b>400</b> connects with reset transistor drain <b>313</b>. Accordingly, reset transistor <b>306</b> is connected between floating diffusion region FD and voltage supply line <b>400</b>. A reset control signal RST applied to reset transistor gate <b>311</b> can be used to activate reset transistor <b>306</b>, which resets floating diffusion region FD to the voltage supply line <b>200</b> level (i.e., V_aa) as is known in the art.

0016Source follower transistor <b>310</b> includes a drain <b>315</b>, a gate <b>317</b>, and a source <b>319</b>. Row select transistor <b>312</b> comprises a drain <b>321</b> which connects with source <b>319</b> of source follower transistor <b>310</b>, a gate <b>323</b>, and a source <b>325</b>. Drain <b>315</b> of source follower transistor <b>310</b> connects with drain <b>313</b> of reset transistor <b>306</b> and voltage supply line <b>400</b>. Floating diffusion region FD connects with gate <b>317</b> of source follower transistor <b>310</b>. Accordingly, source follower transistor <b>310</b> is connected to floating diffusion region FD and is connected between voltage supply line <b>400</b> and row select transistor <b>312</b>. Source follower transistor <b>310</b> converts the charge stored at floating diffusion region FD into an electrical output signal V_out. Row select transistor <b>312</b> is controllable by a row select signal ROW for selectively connecting source follower transistor <b>310</b> and its output voltage signal V_outto a column line of a pixel array.

0017<figref idref="DRAWINGS">FIG. 2</figref> depicts finished construction of the pixel. Processing in connection with <figref idref="DRAWINGS">FIGS. 3-12</figref> is described below of example embodiments of methods of forming one or more conductive interconnects in imager pixel <b>300</b> which comprises multilevel metal routing layers. <figref idref="DRAWINGS">FIGS. 3</figref>, <b>5</b>, <b>7</b>, <b>9</b> and <b>11</b>, by way of example only, depict processing occurring relative to section line A-A in <figref idref="DRAWINGS">FIG. 2</figref>. <figref idref="DRAWINGS">FIGS. 4</figref>, <b>6</b>, <b>8</b>, <b>10</b> and <b>12</b> depict processing occurring relative to section line B-B in <figref idref="DRAWINGS">FIG. 2</figref>.

0018Referring initially to <figref idref="DRAWINGS">FIGS. 3 and 4</figref>, a substrate <b>10</b>, for example a semiconductor substrate, comprises bulk semiconductive material <b>12</b> having field isolation regions <b>14</b> formed therein. In the context of this document, the term “semiconductor substrate” or “semiconductive substrate” is defined to mean any construction comprising semiconductive material, including, but not limited to, bulk semiconductive materials such as a semiconductive wafer (either alone or in assemblies comprising other materials thereon), and semiconductive material layers (either alone or in assemblies comprising other materials). The term “substrate” refers to any supporting structure, including, but not limited to, the semiconductive substrates described above. Substrate <b>10</b> might of course comprise a semiconductor-on-insulator or other substrate, and whether existing or yet-to-be developed.

0019Diffusion region <b>313</b>/<b>315</b> (<figref idref="DRAWINGS">FIG. 4</figref>) is depicted as having been formed relative to active area of substrate material <b>12</b> to comprise the drains of reset and source follower transistors <b>306</b> and <b>310</b>, respectively (<figref idref="DRAWINGS">FIGS. 1 and 2</figref>). Source follower transistor gate <b>317</b> (<figref idref="DRAWINGS">FIG. 3</figref>) and a diffusion region of photosensor <b>302</b> (<figref idref="DRAWINGS">FIGS. 3 and 4</figref>) are also shown. An insulator material <b>20</b> is formed outwardly of materials <b>12</b> and <b>14</b>. Such might be homogenous or non-homogenous. Regardless, example materials include undoped silicon dioxide, silicon dioxide doped with one or more of phosphorous and boron, and/or silicon nitride. Example insulator material <b>20</b> is depicted as comprising a substantially planar outer surface having a plurality of conductive metal lines <b>340</b>, <b>342</b>, <b>344</b>, and <b>346</b> formed at a first metal routing level <b>100</b>. In the context of this document, a “metal routing level” is a mean substrate elevation at which a plurality of conductive metal interconnect lines runs in a substantially horizontal manner. Further in the context of this document, a “metal line” or “metal interconnect line” requires at least a majority portion of such line to be fabricated of an elemental metal and/or alloy of elemental metals. First metal routing level <b>100</b> may or may not constitute the first-ever metal routing level on the substrate, which is known by people of skill in the art to constitute the Metal 1 level. In the depicted <figref idref="DRAWINGS">FIGS. 3 and 4</figref> example, first metal routing level <b>100</b> is depicted as being Metal 1, although such might constitute a higher metal routing level above Metal 1.

0020In one embodiment, a method of forming conductive interconnects in a pixel of an imager where the pixel comprises multilevel metal routing layers includes forming a node of a circuit component of an imager pixel on a substrate. Such might constitute any node of any circuit component of any imager pixel. By way of example only and where the imager pixel is a CMOS imager, the node of the circuit component might comprise any of a ground contact of a photosensor of the imager pixel, a FD contact, a V_aacontact, a V_outcontact, a contact to a source of a source follower transistor, or a contact to a source or a drain of an anti-blooming transistor. With respect to <figref idref="DRAWINGS">FIGS. 3 and 4</figref>, diffusion region <b>313</b>/<b>315</b> in semiconductive material <b>12</b> comprises such a node of a circuit component of imager pixel <b>300</b>, for example with one or both of reset transistor <b>306</b> or source follower transistor <b>310</b> being example circuit components of imager pixel <b>300</b>. Alternately, and by way of example only, the node of the circuit component might comprise a gate of a field effect transistor of the imager pixel that is below a Metal 1 level.

0021A conductive metal line is formed at a first metal routing level that is elevationally outward of the circuit component of the imager pixel. In <figref idref="DRAWINGS">FIGS. 3 and 4</figref>, conductive metal line <b>344</b> at first metal routing level <b>100</b> is an example such line for purposes of the continuing discussion. In this particular example, conductive metal line <b>344</b> comprises a metal interconnect line which will connect floating diffusion region FD with gate <b>317</b> of source follower transistor <b>310</b>, and as described below. Alternate conductive metal lines in an imager pixel, such as a CMOS imager, are also of course contemplated. For example and by way of example only, the conductive metal line in this described embodiment might comprise any of a line to a ground contact of a photosensor of the imager pixel, a line to a V_aacontact, a line to a V_outcontact, a line to a contact of a source of a source follower transistor, a line to a gate of a reset transistor, a line to a gate of a row select transistor, a line to a gate of a transfer transistor, a voltage supply line, a line to a source or a drain contact of an anti-blooming transistor, or a line to a gate of an anti-blooming transistor.

0022Referring to <figref idref="DRAWINGS">FIGS. 5 and 6</figref>, insulative material <b>24</b> has been deposited above first metal routing level <b>100</b> over the depicted conductive metal lines and over the circuit components of the imager pixel elevationally inward thereof. Insulative material <b>24</b> might be homogenous or non-homogenous, and regardless comprise any one or more of the materials of insulator material <b>20</b>.

0023Referring to <figref idref="DRAWINGS">FIGS. 7 and 8</figref>, and in a single or in at least one common masking step (meaning in at least one shared masking step wherein outlines of both the first and second openings are being defined), a first opening <b>26</b> has been etched through insulative material <b>24</b> to conductive metal line <b>344</b>, and a second opening <b>28</b> has been etched through insulative material <b>24</b> to node <b>313</b>/<b>315</b> of the circuit component of imager pixel <b>300</b> that is received elevationally inward of conductive metal line <b>344</b>. Further and accordingly in the depicted example, second opening <b>28</b> is etched to a node <b>313</b>/<b>315</b> which also comprises a V_aanode. <figref idref="DRAWINGS">FIGS. 7 and 8</figref> also depict, using the single or at least one common masking step to etch a third opening <b>30</b> through insulative material <b>24</b> to a gate of a field effect transistor of the imager pixel, namely to gate <b>317</b> of source follower transistor <b>310</b>.

0024By way of example only, a single masking, or at least one masking step common to the fabrication of depicted openings <b>26</b>, <b>28</b> and <b>30</b>, might comprise using photolithographic patterning and etch. For example, a photoresist layer could be deposited over insulative material <b>24</b> and patterned to have openings largely corresponding to what will be the outlines of openings <b>26</b>, <b>28</b>, and <b>30</b>. Other openings would likely also be provided in such a mask step elsewhere within pixel <b>300</b>, and most likely elsewhere on the substrate. Regardless, such a photoresist layer can be utilized as an etching mask for etching openings <b>26</b>, <b>28</b>, and <b>30</b>.

0025Referring to <figref idref="DRAWINGS">FIGS. 9 and 10</figref>, conductive material <b>34</b> has been concurrently deposited within at least first and second openings <b>26</b> and <b>28</b>, respectively, with such depositing in the depicted example also being to within third opening <b>30</b>. Conductive material <b>34</b> might be homogenous or non-homogenous, and might comprise multiple separate layer and material depositions. In one embodiment, material <b>34</b> comprises or consists of metal. Regardless, <figref idref="DRAWINGS">FIGS. 9 and 10</figref> depict conductive material <b>34</b> within first opening <b>26</b> being in conductive connection with conductive metal line <b>344</b>, conductive material <b>34</b> within second opening <b>28</b> being in conductive connection with node <b>313</b>/<b>315</b>, and conductive material <b>34</b> within third opening <b>30</b> being in conductive connection with gate <b>317</b>. In one embodiment and as shown, conductive material <b>34</b> is formed to be in direct physical touching contact with the respective of such nodes to which such conductively connects. The constructions of <figref idref="DRAWINGS">FIGS. 9 and 10</figref> might be fabricated by depositing one or more conductive materials <b>34</b> to overfill the depicted openings <b>26</b>, <b>28</b>, and <b>30</b>, followed by polishing of conductive material <b>34</b> inwardly at least to the outer surface of insulative material <b>24</b>. Any alternate processing is of course contemplated, with one example being described below.

0026Referring to <figref idref="DRAWINGS">FIGS. 11 and 12</figref>, a first metal line <b>360</b> has been formed at a second metal routing level <b>200</b> that is above first metal routing level <b>100</b>, and in conductive connection with conductive material <b>34</b> in first opening <b>26</b>. Also, a second metal line <b>362</b> has been formed at second metal routing level <b>200</b> in conductive connection with conductive material <b>34</b> within second opening <b>28</b>. Further in the depicted example, first metal line <b>360</b> has also been formed in conductive connection with conductive material <b>34</b> in third opening <b>30</b>. Commensurate with such processing, a V_outline <b>364</b> (<figref idref="DRAWINGS">FIG. 2</figref>) may also be fabricated in conductive connection with node/source <b>325</b> of row select transistor <b>312</b>. Other metal lines would likely also of course be fabricated over substrate <b>10</b> at metal routing level <b>200</b>. In one embodiment, metal routing level <b>200</b> is the Metal 2 level, although such might be a higher metal routing level and not necessarily the next adjacent metal routing level to that of metal routing level <b>100</b>.

0027The metal of lines <b>360</b> and <b>362</b> might be of the same or different composition(s) as that of conductive material <b>34</b>. Such might be formed, by way of example only, by deposition of one or more metal layers over insulative material <b>24</b> and subtractive etching thereof using photomasking. Alternately and by way of example only, the concurrently depositing of conductive material <b>34</b> to within the depicted openings could be conducted to effectively over-fill such openings sufficiently such that the example first and second metal lines <b>360</b>, <b>362</b> are formed by substractively etching a portion of the conductive material <b>34</b> which is received elevationally outward of the openings <b>26</b>, <b>28</b>, and <b>30</b> to produce the example <figref idref="DRAWINGS">FIGS. 11 and 12</figref> construction. In one implementation, first metal routing level <b>100</b> is Metal 1, and second metal routing level <b>200</b> is Metal 2.

0028In one embodiment, a method of forming a conductive interconnect in an imager pixel that comprises multilevel metal routing layers includes forming a node of a circuit component of an imager pixel on a substrate. The node comprises at least one of a diffusion region and semiconductive material of the substrate or a gate of a field effect transistor of the imager pixel. By way of example only, any of the above nodes, circuit components and gates might be utilized. By way of example only, gate <b>317</b> in <figref idref="DRAWINGS">FIG. 3</figref> and diffusion region <b>313</b>/<b>315</b> in <figref idref="DRAWINGS">FIG. 4</figref> are example such nodes.

0029A conductive metal line is formed at a Metal 1 level that is elevationally outward of the circuit component of the imager pixel which is received inwardly of the Metal 1 level. Any of lines <b>340</b>, <b>342</b>, <b>344</b>, or <b>346</b> are an example such conductive line. An insulative material is deposited over the Metal 1 level line and over the circuit component of the imager pixel. Insulative material <b>24</b>, by way of example only, in <figref idref="DRAWINGS">FIGS. 4 and 5</figref> is one example.

0030An opening is etched through the insulative material past the Metal 1 level to the node of the circuit component of the imager pixel that is received elevationally inward of the Metal 1 level. Each of openings <b>28</b> and <b>30</b> in <figref idref="DRAWINGS">FIGS. 7 and 8</figref> are an example of such an opening which has been so etched, and regardless of whether both are etched, regardless of whether opening <b>26</b> is etched, and regardless of whether any other opening is etched within an insulative material <b>24</b>.

0031Conductive material is deposited to within the opening in conductive connection with the node of the circuit component of the imager pixel. Conductive material <b>34</b> deposited within either of openings <b>28</b> and/or <b>30</b> in <figref idref="DRAWINGS">FIGS. 9 and 10</figref> is such an example depositing.

0032A conductive metal line is formed at a metal routing level that is higher than Metal 1 and in conductive connection with the conductive material in the opening. Either of conductive metal lines <b>360</b> or <b>362</b> in <figref idref="DRAWINGS">FIGS. 11 and 12</figref> are an example of such a conductive metal line. Other attributes as described above might also additionally be utilized and are contemplated. Further of course, the conductive metal routing level higher than Metal 1 might be Metal 2 or might be higher than Metal 2.

0033The above example <figref idref="DRAWINGS">FIG. 12</figref> processing embodiment depicts the node of the circuit component comprising a diffusion region, for example region <b>313</b>/<b>315</b> in a semiconductive material, for example material <b>12</b>, and with conductive material <b>34</b> deposited therewithin being in direct physical touching contact with diffusion region <b>313</b>/<b>315</b>. <figref idref="DRAWINGS">FIGS. 13 and 14</figref> depict an alternate embodiment 10a positionally corresponding to <figref idref="DRAWINGS">FIGS. 11 and 12</figref>, respectively. Like numerals from the first described embodiment have been utilized where appropriate, with differences being indicated with the suffix “a” or with different numerals.

0034Referring to <figref idref="DRAWINGS">FIG. 14</figref>, and perhaps prior to forming conductive metal lines <b>340</b>, <b>342</b>, <b>344</b>, and <b>346</b>, an opening <b>23</b> has been formed within insulator layer <b>20</b> to diffusion region <b>313</b>/<b>315</b>. Such has been subsequently filled with a conductive material <b>34</b><i>a</i>. Subsequent processing is depicted as occurring whereby an opening <b>28</b><i>a </i>has been formed in a single or at least one common masking step to the formation of openings <b>30</b> and <b>26</b>. Opening <b>28</b><i>a </i>extends to an outer surface <b>29</b> of conductive material <b>34</b><i>a </i>within opening <b>23</b> of insulator material <b>20</b>.

0035Conductive material <b>35</b> is depicted as having been concurrently deposited to overfill openings <b>26</b>, <b>30</b>, and <b>28</b><i>a</i>, and then subjected to patterning and subtractive etch to form the depicted lines <b>360</b> and <b>362</b>. Alternately and by way of example only, conductive material <b>35</b> might be deposited to overfill openings <b>26</b>, <b>30</b>, and <b>28</b><i>a</i>, and then polished back at least to the outer surface of insulative material <b>24</b>. Thereafter, conductive material could be deposited and patterned and subtractively etched to form lines <b>360</b> and <b>362</b>. Regardless, conductive material <b>35</b> might be the same or different composition(s) as materials <b>34</b> or <b>34</b><i>a. </i>

0036The depositing of conductive material <b>35</b> at least to within the example first opening <b>26</b> and example second opening <b>28</b><i>a </i>is in respective conductive connection with conductive metal line <b>344</b> and with node <b>313</b>/<b>315</b>, respectively. Additionally or alternately, the node of the circuit component to which conductive material <b>35</b> within opening <b>28</b><i>a </i>connects may be considered as being to that of an outer surface <b>29</b> of a conductive pillar formed by material <b>34</b><i>a </i>within opening <b>23</b> that extends outwardly from a diffusion region <b>313</b>/<b>315</b>. In such example, node <b>29</b> is still received elevationally inward of metal routing level <b>100</b>, and in the depicted example conductive material <b>35</b> is in direct physical touching contact with outer surface <b>29</b>.

0037Without being limited by any theory of invention and without requiring that any embodiment of the invention necessarily achieve any advantage, one or more advantages might result or be enabled. For example, it is conventional to refer to a “contact” as any electrical connection through an insulator that connects from M<b>1</b> to the bulk semiconductive material or to the first level transistor gates. It is also conventional to refer to a “via” as any electrical connection through an insulator between any two or more different metal layers (i.e., any of M<b>1</b>, M<b>2</b>, M<b>3</b>, etc.). Such contacts and vias in imagers in the prior art are understood to be one or both of etched separately or require surrounding metal pads underneath and above the vias. Mixed via and contact etching in a process of forming an imager pixel in an embodiment of the invention may be used, and may enable eliminating of surrounding metal pads for stacked via and contact structures.

0038Although the above described embodiments were in connection with forming one or more conductive interconnects in a pixel of an imager, embodiments herein also include methods of forming conductive interconnects in integrated circuitry comprising multilevel metal routing layers regardless of whether within a pixel and regardless of whether formed as part of any imager device or imager circuitry. For example in one embodiment, such a method comprises forming a node of a circuit component on a substrate. A conductive metal line is formed at a first metal routing level that is elevationally outward of the circuit component. Insulative material is deposited above the first metal routing level over the conductive metal line and the circuit component. Example processing as described above, and regardless of whether in the context of a pixel or in the context of an imager, could of course be utilized.

0039In a single or at least one common masking step, a first opening is etched through the insulative material to the conductive metal line and a second opening is etched through the insulative material to the node of the circuit component that is received elevationally inward of the conductive metal line. Conductive material is concurrently deposited to within the first and second openings in respective conductive connection with the conductive metal line and the node of the circuit component. A first metal line is formed at a second metal routing level that is above the first metal routing level in conductive connection with the conductive material in the first opening. A second metal line is formed at the second metal routing level in conductive connection with the conductive material in the second opening. Any of the above described processing attributes, materials, and constructions can of course be utilized.

0040In compliance with the statute, the subject matter disclosed herein has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the claims are not limited to the specific features shown and described, since the means herein disclosed comprise example embodiments. The claims are thus to be afforded full scope as literally worded, and to be appropriately interpreted in accordance with the doctrine of equivalents.