EL display device, method of manufacturing the same, and electronic apparatus

BACKGROUND

The present invention relates to an electroluminescent (EL) display device, to a method of manufacturing the EL display device, and to an electronic apparatus.

In the related art, there has been proposed a double-sided light-emitting type electroluminescent display device (hereinafter, referred to as ‘EL display device’) which emits light onto both transparent cathode and anode electrodes (e.g., see JP-A-2001-332392).

However, in the EL display device disclosed in JP-A-2001-332392, there has been a problem in that since an opposite side of the EL display device can be seen, a displayed image is reversed on a front side and a rear side of a panel, thus different images cannot be simultaneously displayed on the front side and the rear side of the panel.

In addition, in the EL display device disclosed in JP-A-2001-332392, there has been a problem in that since the EL display device does not have a top emission structure, the efficiency of extracting light is reduced due to array arrangement in a matrix-type panel.

Further, there has been a problem in that it is not possible to adjust the balance of luminance at the front side and the rear side, and to change the amount of information in a panel having the same light-emitting area on both faces.

SUMMARY

An advantage of some aspects of the invention is that it provides a double-sided light-emitting EL display device capable of simultaneously displaying different images on both the front side and rear side, a method of manufacturing the EL display device, and an electronic apparatus equipped with the EL display device.

According to an aspect of the invention, an EL display device includes: first and second pixel electrodes formed on a substrate, for each sub-pixel within a unit pixel; a counter electrode opposite to the first and second pixel electrodes; a light-emitting functional layer provided between the first and second pixel electrodes and the counter electrode; and a sealing member which seals the light-emitting functional layer. The first and second pixel electrodes and the counter electrode are formed of a transparent conductive film, a sealing-side light-emitting area for extracting light emitted from the light-emitting functional layer from the sealing member is formed on the first pixel electrode, a substrate-side light-emitting area for extracting light emitted from the light-emitting functional layer from the substrate is formed on the second pixel electrode, a light-shielding layer which is adjacent to the first pixel electrode in the sealing-side light-emitting area and the counter electrode in the substrate-side light-emitting area is formed, and the light-emitting functional layer emits light independently in the sealing-side light-emitting area and the substrate-side light-emitting area.

In the sealing-side light-emitting area, when the light-emitting functional layer emits light by the first pixel electrode and the counter electrode, the light is not emitted to the first pixel electrode on which the light-shielding layer is formed, but passes through the counter electrode and the sealing member to be emitted.

Meanwhile, in the substrate-side light-emitting area, when the light-emitting functional layer emits light by the second pixel electrode and the counter electrode, the light is not emitted to the counter electrode on which the light-shielding layer is formed, but passes through the second pixel electrode and the substrate to be emitted.

The sealing-side light-emitting area and the substrate-side light-emitting area are formed for each sub-pixel, and the light-emitting functional layer emits light independently in the sealing-side light-emitting area and the substrate-side light-emitting area. Accordingly, it is possible to independently perform a light-emitting operation to the sealing member and a light-emitting operation to the substrate in each sub-pixel.

For example, when there are RGB sub-pixels within a unit pixel, it is possible to perform full-color display in the unit pixel and, and at the same time, to perform the full-color display independently in the sealing member and the substrate.

According to the invention, since light can be independently emitted to the sealing member and the substrate in each sub-pixel, problems in the conventional double-sided light-emitting EL display device can be solved. In the related art, since an opposite side of an EL display device can be seen, an image is reversed on the front and rear sides of a panel. Accordingly, it was not possible to display different images simultaneously on the front and rear sides of the panel. In contrast, according to the invention, since the light-shielding layers are formed in the first pixel electrode in the sealing-side light-emitting area and the counter electrode in the substrate-side light-emitting area, and the light-emitting functional layer emits light independently in the sealing-side light-emitting area and the substrate-side light-emitting area, an opposite side of the EL display device cannot be seen and an image cannot be reversed on the front and rear sides of the panel.

Also, since the light-emitting functional layer emits light independently in the sealing-side light-emitting area and the substrate-side light-emitting area, it is possible to easily adjust luminance balance in each area and to easily change the amount of information in each area.

Further, in the EL display device according to the invention, preferably, at least one of the light-shielding layer formed on the first pixel electrode and the light-shielding layer formed on the counter electrode has a light-reflecting property.

Accordingly, it is possible to obtain the same effect as in the above-mentioned EL display device, and to improve light-emitting efficiency to display an image with a high luminance since the light-shielding layer has a light-reflecting property.

In more detail, light emitted from the light-emitting functional layer in the sealing-side light-emitting area passes through the counter electrode and the sealing member, and at the same time, is reflected by the light-shielding layer formed in the first pixel electrode and then passes through the counter electrode and the sealing member.

Meanwhile, light emitted from the light-emitting functional layer in the substrate-side light-emitting area passes through the second pixel electrode and the substrate, and at the same time, is reflected by the light-shielding layer formed in the counter electrode and then passes through the second pixel electrode and the substrate.

Accordingly, since the light-shielding layer has a light-reflecting property, it is possible to improve light-emitting efficiency in the sealing-side light-emitting area and the substrate-side light-emitting area.

Furthermore, in the EL display device according to the invention, preferably, at least one of the light-shielding layer formed on the first pixel electrode and the light-shielding layer formed on the counter electrode has a light-absorbing property.

Accordingly, it is possible to obtain the same effect as that of the above-mentioned EL display device and to improve the contrast since the light-shielding layer acts as a black matrix.

In more detail, when the light-shielding layer having a light-absorbing property is formed on the counter electrode in the substrate-side light-emitting area, the light-shielding layer absorbs external light which is incident from the sealing member. Accordingly, it is possible to improve the contrast of an image displayed on the sealing member. In addition, since the light-shielding layer absorbs external light which is incident from the substrate side and passes through the light-emitting layer, it is possible to improve the contrast of an image displayed on the substrate side without the need to add a deflecting plate.

When the light-shielding layer having a light-absorbing property is formed on the first pixel electrode in the sealing-side light-emitting area, the light-shielding layer absorbs external light which is incident from the substrate side. Accordingly, it is possible to improve the contrast of an image displayed on the substrate side. In addition, since the light-shielding layer absorbs external light which is incident from the sealing member side and passes through the light-emitting layer, it is possible to improve the contrast of an image displayed on the sealing member side without the need to add a deflecting plate.

Accordingly, since the light-shielding layer has a light-absorbing property and acts as a black matrix, it is possible to improve the contrast of an image displayed on the sealing-side light-emitting area and the substrate-side light-emitting area.

In addition, in the EL display device according to the invention, preferably, first and second switching elements are connected to each of the first and second pixel electrodes, and the light-emitting functional layer emits light by driving the first and second switching elements.

Accordingly, it is possible to allow the light-emitting functional layer to emit light by means of the first and second switching elements. Accordingly, it is possible to allow the light-emitting functional layer to emit light independently in the sealing-side light-emitting area and the substrate-side light-emitting area.

Moreover, in the EL display device according to the invention, preferably, a planarizing film is formed between the first and second pixel electrodes and the first and second switching elements.

The term ‘planarizing film’ means a layer which acts to cover and planarize an uneven portion or a step portion caused by the first and second switching elements formed on the substrate, or wires connected to the first and second switching elements. The planarizing film acts as an interlayer insulation layer to isolate the first and second switching elements from the first and second pixel electrodes.

Since the planarizing film is formed between the first and second pixel electrodes and the first and second switching elements, the first and second pixel electrodes can be formed on a planarized surface.

Also, since the planarizing film is formed, a light-emitting area can be formed above of the switching element. Accordingly, the sealing-side light-emitting area can be provided above the switching element, thereby improving an aperture ratio.

Further, in the EL display device according to the invention, preferably, the light-shielding layer formed on the first pixel electrode in the sealing-side light-emitting area overlaps the first switching element with the planarizing film interposed therebetween in plan view.

According to the invention, since the light-shielding layer formed on the first pixel electrode and the switching element overlap each other with the planarizing film interposed therebetween in plan view, light emitted from the substrate-side light-emitting area passes through the second pixel electrode and the substrate without being blocked by the first switching element. Accordingly, it is possible to improve efficiency of extracting the light emitted from the substrate-side light-emitting area.

Meanwhile, in the related art, when the emitted light is extracted to the substrate side, the emitted light is shielded by a switching element or an array wire, thereby reducing the efficiency of extracting the emitted light. However, the present embodiment can solve this problem.

Furthermore, in the EL display device according to the invention, preferably, the first and second switching elements are formed in an area other than the substrate-side light-emitting area.

At this time, ‘an area other than the substrate-side light-emitting area’ means an area in which the sealing-side light-emitting area or the partition wall is formed.

Accordingly, light emitted from the substrate-side light-emitting area passes through the second pixel electrode and the substrate without being blocked by the first or second switching element. As a result, it is possible to improve efficiency of extracting the light emitted from the substrate-side light-emitting area.

In addition, in the EL display device according to the invention, preferably, preferably, each of the first and second switching elements is connected to a capacitive element, the capacitive element overlapping the sealing-side light-emitting area.

The capacitive element is preferably formed by interposing an insulation film between a gate electrode and a source electrode in the first and second switching elements.

Accordingly, light emitted from the substrate-side light-emitting area passes through the second pixel electrode and the substrate without being blocked by the capacitive element. As a result, it is possible to improve efficiency of extracting the light emitted from the substrate-side light-emitting area.

Moreover, in the EL display device according to the invention, preferably, each of the first and second switching elements is connected to a power line, the power line overlapping the sealing-side light-emitting area.

According to the invention, light emitted from the substrate-side light-emitting area passes through the second pixel electrode and the substrate without being blocked by the power line. Accordingly, it is possible to improve efficiency of extracting the light emitted from the substrate-side light-emitting area.

Further, in the EL display device according to the invention, preferably, a partition wall is formed to partition the light-emitting functional layer, the partition wall overlapping at least one of the first and second switching elements with the planarizing film interposed therebetween in plan view.

According to the invention, light emitted from the substrate-side light-emitting area passes through the second pixel electrode and the substrate without being blocked by the first and second switching elements. Accordingly, it is possible to improve efficiency of extracting the light emitted from the substrate-side light-emitting area.

Meanwhile, in the related art, when the emitted light is extracted to the substrate, the emitted light is shielded by a switching element or an array wire, thereby reducing the efficiency of extracting the emitted light. However, the present embodiment can solve this problem.

Furthermore, in the EL display device according to the invention, preferably, the light-emitting functional layer is formed commonly in the sealing-side light-emitting area and the substrate-side light-emitting area.

The light-emitting functional layer is formed commonly in the sealing-side light-emitting area and the substrate-side light-emitting area. Accordingly, since it is not necessary to form the light-emitting functional layer independently in the sealing-side light-emitting area and the substrate-side light-emitting area, the light-emitting functional layer can be easily formed.

In addition, in the EL display device according to the invention, preferably, the light-emitting functional layer is formed independently in the sealing-side light-emitting area and the substrate-side light-emitting area.

According to the invention, since the light-emitting functional layer is formed independently in the sealing-side light-emitting area and the substrate-side light-emitting area, it is possible to form the light-emitting functional layer having a stable layer thickness in each light-emitting area.

Further, according to another aspect of the invention, A method of manufacturing an EL display device includes: forming first and second switching elements above a substrate; forming first and second pixel electrodes connected to each of the first and second switching elements; forming a light-emitting functional layer above the first and second pixel electrodes; forming a counter electrode opposite to the first and second pixel electrodes; and forming a sealing member which seals the light-emitting functional layer. The first and second pixel electrodes and the counter electrode are formed of a transparent conductive film, a light-shielding layer which is adjacent to the first pixel electrode in the sealing-side light-emitting area and the counter electrode in the substrate-side light-emitting area is formed, a sealing-side light-emitting area for extracting light emitted from the light-emitting functional layer from the sealing member is formed on the first pixel electrode, and a substrate-side light-emitting area for extracting light emitted from the light-emitting functional layer from the substrate is formed on the second pixel electrode.

In the EL display device manufactured by the above-mentioned method, the light-emitting functional layer can emit light independently in the sealing-side light-emitting area and the substrate-side light-emitting area according to the first and second switching elements.

Also, since light can be independently emitted to the sealing member and the substrate, problems in the conventional double-sided light-emitting EL display device can be solved. In the related art, since an opposite side of an EL display device can be seen, an image is reversed on the front side and the rear side of a panel. Accordingly, it was not possible to display different images simultaneously on the front side and the rear side of the panel. In contrast, according to the invention, since the light-shielding layers are formed in the first pixel electrode in the sealing-side light-emitting area and the counter electrode in the substrate-side light-emitting area, and the light-emitting functional layer emits light independently in the sealing-side light-emitting area and the substrate-side light-emitting area, an opposite side of the EL display device cannot be seen and an image cannot be reversed on the front side and the rear side of the panel.

Also, since the light-emitting functional layer emits light independently in the sealing-side light-emitting area and the substrate-side light-emitting area, it is possible to easily adjust luminance balance in each area and to easily change the amount of information in each area.

Further, in the method of manufacturing the EL display device according to the invention, preferably, the first and second pixel electrodes are formed for each sub-pixel within a unit pixel.

The sealing-side light-emitting area and the substrate-side light-emitting area are formed for each sub-pixel, and the light-emitting functional layer emits light independently in the sealing-side light-emitting area and the substrate-side light-emitting area. Accordingly, it is possible to independently perform a light-emitting operation to the sealing member and a light-emitting operation to the substrate in each sub-pixel.

Furthermore, in the method of manufacturing the EL display device according to the invention, preferably, the light-shielding layer is formed on the counter electrode in the substrate-side light-emitting area by using a mask deposition method.

Accordingly, the light-shielding layer can be formed on the counter electrode by depositing according to a predetermined mask pattern.

In addition, an electronic apparatus according to the invention includes the EL display device as a display unit.

An example of the electronic apparatus according to the invention is a mobile phone. Accordingly, by employing the EL display device according to the invention as a display unit of the electronic apparatus, it is possible to realize the electronic apparatus equipped with the display unit capable of simultaneously displaying different images on a front side and a rear side.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanying drawings, wherein like numbers reference like elements.

<figref idrefs="DRAWINGS">FIG. 1</figref> is a plan view schematically illustrating the configuration of an EL display device according to the invention.

<figref idrefs="DRAWINGS">FIG. 2</figref> is an equivalent circuit diagram of a sub-pixel in the EL display device according to the invention.

<figref idrefs="DRAWINGS">FIG. 3</figref> is an enlarged plan view of a sub-pixel in the EL display device according to the invention.

<figref idrefs="DRAWINGS">FIG. 4</figref> is an enlarged cross-sectional view of a sub-pixel in an EL display device according to the invention.

<figref idrefs="DRAWINGS">FIG. 5A</figref> is a view illustrating a method of manufacturing the EL display device according to the invention.

<figref idrefs="DRAWINGS">FIG. 5B</figref> is a view illustrating a method of manufacturing the EL display device according to the invention.

<figref idrefs="DRAWINGS">FIG. 5C</figref> is a view illustrating a method of manufacturing the EL display device according to the invention.

<figref idrefs="DRAWINGS">FIG. 5D</figref> is a view illustrating a method of manufacturing the EL display device according to the invention.

<figref idrefs="DRAWINGS">FIG. 6A</figref> is a view illustrating a method of manufacturing the EL display device according to the invention.

<figref idrefs="DRAWINGS">FIG. 6B</figref> is a view illustrating a method of manufacturing the EL display device according to the invention.

<figref idrefs="DRAWINGS">FIG. 6C</figref> is a view illustrating a method of manufacturing the EL display device according to the invention.

<figref idrefs="DRAWINGS">FIG. 7A</figref> is a view showing a method of manufacturing the EL display device according to the invention.

<figref idrefs="DRAWINGS">FIG. 7B</figref> is a view showing a method of manufacturing the EL display device according to the invention.

<figref idrefs="DRAWINGS">FIG. 8</figref> is a perspective view illustrating an electronic apparatus according to the invention.

<figref idrefs="DRAWINGS">FIG. 9</figref> is a perspective view illustrating an electronic apparatus according to the invention.

DETAILED DESCRIPTION OF EMBODIMENTS

Exemplary embodiments of an EL display device and an electronic apparatus according to the invention will now be described in detail with reference to the accompanying drawings. The invention is not limited to the exemplary embodiments, but various changes in form and details may be made therein without departing from the scope of the invention. In the drawings, individual layers and components are depicted in different scales so that they can be easily recognized in the drawings.

EL Display Device

<figref idrefs="DRAWINGS">FIG. 1</figref> is a plan view schematically illustrating a configuration of an EL display device <b>1</b>. The EL display device according to the present embodiment uses an electroluminescent material, which is an example of an electro-optical material, particularly, an organic EL material. In the EL display device, the organic EL material emits light by an active matrix method using a Thin Film Transistor (TFT).

The EL display device according to the present embodiment is a double-sided light-emitting EL display device capable of displaying an image on both the front and rear sides of a panel. In other words, it is a so-called double-emission-type EL display device which performs top-emission-type display and bottom-emission-type display.

As shown in <figref idrefs="DRAWINGS">FIG. 1</figref>, the EL display device <b>1</b> includes a substrate <b>20</b> made of an insulation material, a pixel part <b>3</b> (within an area surrounded by a one-dot-chain line in <figref idrefs="DRAWINGS">FIG. 1</figref>) and a cover substrate (which will be described below) covering the pixel part <b>3</b>, which are provided on the substrate <b>20</b>.

In the pixel part <b>3</b>, emitted light passes through the substrate <b>20</b> to display an image, and at the same time, passes through the cover substrate <b>46</b> to display an image.

The pixel part <b>3</b> is partitioned into an actual display area <b>4</b> (an area surrounded by a two-dot-chain line in <figref idrefs="DRAWINGS">FIG. 1</figref>) at the center and a dummy area <b>5</b> (an area between the one-dot-chain line and the two-dot-chain line) located outside the actual display area <b>4</b>. A plurality of pixels is provided in the actual display area <b>4</b>. Scanning line driving circuits <b>80</b> and inspection circuits <b>90</b> are provided below the dummy area <b>5</b>.

Each pixel formed in the actual display area <b>4</b> has RGB sub-pixels (where R is red, G is green, and B is blue), which are configured to emit light from both the substrate <b>20</b> and the cover substrate <b>46</b>. Also, a single pixel is composed of three RGB sub-pixels each of which emits one of light components having RGB colors.

Hereinafter, a display area which is a minimum element to display an image is referred to as a ‘sub-pixel’, and a display area composed of RGB sub-pixels is referred to as a ‘pixel’ (unit pixel). With such a configuration, a full-color display is performed by using a double emission method.

The scanning line driving circuit <b>80</b> provided below the dummy area <b>5</b> includes a shift register and a level register, and drives TFTs provided in each sub-pixel in the actual display area <b>4</b>. The inspection circuit <b>90</b> provided below the dummy area <b>5</b> is a circuit for inspecting operating conditions of the EL display device <b>1</b>, and includes, for example, an inspection information output unit (not shown) outputting inspection results to the outside. The inspection circuit <b>90</b> is configured to inspect the quality or defects of display devices during manufacture or shipment.

Driving voltages for driving the scanning line driving circuit <b>80</b> and the inspection circuit <b>90</b> are applied through a driving voltage conducting unit from a predetermined voltage source. Driving control signals and driving voltages applied to the scanning line driving circuit <b>80</b> and the inspection circuit <b>90</b> are transmitted and applied through a driving control signal conducting unit and a driving voltage conducting unit from a predetermined main driver which operates the EL display device <b>1</b>. In this case, the driving control signals are instruction signals applied from a main driver associated with controls when the scanning line driving circuit <b>80</b> and the inspection circuit <b>90</b> output signals.

The EL display device <b>1</b> will now be described in detail with reference to <figref idrefs="DRAWINGS">FIGS. 2 to 4</figref>.

<figref idrefs="DRAWINGS">FIG. 2</figref> is an equivalent circuit diagram of a single sub-pixel in an actual display area <b>4</b> of the EL display device <b>1</b>. <figref idrefs="DRAWINGS">FIG. 3</figref> is an enlarged plan view of a single sub-pixel in an actual display area <b>4</b> of the EL display device <b>1</b>. <figref idrefs="DRAWINGS">FIG. 4</figref> is a cross-sectional view taken along the line IV-IV of <figref idrefs="DRAWINGS">FIG. 3</figref>.

As shown in <figref idrefs="DRAWINGS">FIG. 2</figref>, the EL display device <b>1</b> is an active-matrix-type device which uses a TFT as a switching element. The EL display device <b>1</b> includes scanning lines <b>101</b>T and <b>101</b>B, data lines <b>102</b>T and <b>102</b>B extending in a direction perpendicular to that of the scanning lines <b>101</b>T and <b>101</b>B, and a power line <b>103</b> extending parallel to the data lines <b>102</b>T and <b>102</b>B. These lines extend in a direction in which a plurality of sub-pixels D arranged in a matrix shape is arranged. That is, the scanning lines <b>101</b>T and <b>101</b>B extend in a transverse direction of the drawing, while the data lines <b>102</b>T and <b>102</b>B and the power line <b>103</b> extend in a longitudinal direction of the drawing. Although an equivalent circuit of a single sub-pixel D is shown in <figref idrefs="DRAWINGS">FIG. 2</figref> in the present embodiment, a plurality of sub-pixels D arranged in a matrix shape is connected in parallel with the scanning lines <b>101</b>T and <b>101</b>B, the data lines <b>102</b>T and <b>102</b>B, and the power line <b>103</b>.

The scanning lines <b>101</b>T and <b>101</b>B are connected to a scanning line driving circuit <b>201</b> including a shift register and a level shifter. The scanning line driving circuit <b>201</b> can apply different scanning signals to the scanning lines <b>101</b>T and <b>101</b>B.

In addition, the data lines <b>102</b>T and <b>102</b>B are connected to a data line driving circuit <b>202</b> including a shift register, a level shifter, a video line, and an analog switch. The data line driving circuit <b>202</b> can apply different data signals to the data lines <b>102</b>T and <b>102</b>B.

Accordingly, the EL display device <b>1</b> displays an image in a double emission method to be described later by applying signals to the scanning lines <b>101</b>T and <b>101</b>B or data lines <b>102</b>T and <b>102</b>B.

The sub-pixel D has a sealing-side light-emitting area <b>73</b> performing a top emission display operation by emitting light to the cover substrate <b>46</b>, and a substrate-side light-emitting area <b>74</b> performing a bottom emission display operation by emitting light to a substrate <b>20</b>.

In the sealing-side light-emitting area <b>73</b>, a light-emitting functional layer <b>12</b> is driven by a switching TFT <b>120</b> and a driving TFT (first switching element) <b>122</b>.

Also, in the substrate-side light-emitting area <b>74</b>, the light-emitting functional layer <b>12</b> is driven by a switching TFT <b>121</b> and a driving TFT (second switching element) <b>123</b>.

Operations of each TFT and driving of the light-emitting functional layer <b>12</b> in the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b> will now be described.

In TFT <b>120</b>, when a scanning signal is applied to a gate electrode through the scanning line <b>101</b>T, a data signal of the data line <b>102</b>T is applied to a storage capacitor (capacitive element) CT through a channel of the TFT <b>120</b>. As a result, the data signal of the TFT <b>120</b> is held by means of the storage capacitor CT. When the data signal supplied from the TFT <b>120</b> or data signal held in the storage capacitor CT is applied to a gate electrode of the TFT <b>122</b>, a driving current of the power line <b>103</b> flows through a channel of the TFT <b>122</b> and flows from a pixel electrode to a cathode electrode. Accordingly, in the sealing-side light-emitting area <b>73</b>, the light-emitting functional layer <b>12</b> provided between the pixel electrode and the cathode electrode emits light according to the amount of current flowing therethrough.

In TFT <b>121</b>, when a scanning signal is applied to a gate electrode through the scanning line <b>101</b>B, a data signal of the data line <b>102</b>B is applied to a storage capacitor (capacitive element) CB through a channel of the TFT <b>121</b>. As a result, the data signal of the TFT <b>121</b> is held by means of the storage capacitor CB. When the data signal applied from the TFT <b>121</b> or data signal held in the storage capacitor CB is applied to a gate electrode of the TFT <b>123</b>, a driving current of the power line <b>103</b> flows through a channel of the TFT <b>123</b> and flows from a pixel electrode to a cathode electrode. Accordingly, in the substrate-side light-emitting area <b>74</b>, the light-emitting functional layer <b>12</b> provided between the pixel electrode and the cathode electrode emits light according to the amount of current flowing therethrough.

By operation of the TFTs <b>120</b>, <b>121</b>, <b>122</b>, and <b>123</b>, the sub-pixel D can emit light onto the substrate <b>20</b> and the cover substrate <b>46</b>.

Next, a plan view of a sub-pixel D will now be described with reference to <figref idrefs="DRAWINGS">FIG. 3</figref>.

In <figref idrefs="DRAWINGS">FIG. 3</figref>, to explain a stacked structure of various lines constituting the sub-pixel D, the lines are depicted to be transmissive.

Individual components shown in <figref idrefs="DRAWINGS">FIG. 3</figref> are formed on the substrate <b>20</b>. Interlayer insulation films are formed between the individual components (lines, TFTs, and capacitive elements) to electrically insulate from each other. Also, contact holes are formed in the interlayer insulation films to electrically conduct individual components each other.

As shown in <figref idrefs="DRAWINGS">FIG. 3</figref>, the EL display device <b>1</b> is configured such that an n-th sub-pixel D(n) and an (n+1)-th sub-pixel D(n+1) are adjacent to each other in a transverse direction of the drawing.

Also, the EL display device <b>1</b> has a light-emitting functional layer area <b>12</b>AR which becomes a planar pattern of the light-emitting functional layer <b>12</b> across the sub-pixels D(n), D(n+1). The light-emitting functional layer area <b>12</b>AR is commonly formed both on a substrate-side light-emitting area <b>74</b> of the sub-pixel D(n) and on a sealing-side light-emitting area <b>73</b> of the sub-pixel D(n+1). Also, the light-emitting functional layer area <b>12</b>AR is surrounded by a bank area (partition wall) <b>21</b>AR which becomes a planar pattern of an organic bank <b>21</b>. Also, the organic bank area <b>21</b>AR is formed in the center of the individual sub-pixels D(n) and D(n+1), and isolates the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b> from each other in the individual sub-pixels.

In <figref idrefs="DRAWINGS">FIG. 3</figref>, the bank area <b>21</b>AR extends in a longitudinal direction of the drawing and formed on both sides of the light-emitting functional layer area <b>12</b>AR, and also extends in a transverse direction of the drawing. Thus, the light-emitting functional layer area <b>12</b>AR is surrounded by the bank area <b>21</b>AR extending in longitudinal and transverse directions of the drawing.

In the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b>, the scanning lines <b>101</b>T and <b>101</b>B extend toward a direction in which the sub-pixels D are adjacent to each other, and are formed both on the sealing-side light-emitting area <b>73</b> and on the substrate-side light-emitting area <b>74</b>.

Meanwhile, the data lines <b>102</b>T and <b>102</b>B, the switching TFTs <b>120</b>, <b>121</b>, and the power line <b>103</b> extend in a longitudinal direction of the drawing, and overlap only the sealing-side light-emitting area <b>73</b>. Also, channel areas of the TFTs <b>120</b>, <b>121</b> overlap the scanning lines <b>101</b>T and <b>101</b>B which act as gate electrodes of the TFTs <b>120</b>, <b>121</b>.

Also, the data lines <b>102</b>T and <b>102</b>B have a plurality of bent portions K to prevent the data lines <b>102</b>T and <b>102</b>B from overlapping each other, or to prevent the data lines <b>102</b>T and <b>102</b>B from overlapping the TFTs <b>120</b>, <b>121</b>. Contact holes C are formed on portions in which the TFTs <b>120</b>,<b>121</b> and the bent portions K overlap each other to allow the data line <b>102</b>T and a source area of the TFT <b>120</b> to be electrically connected and to allow the data line <b>102</b>B and a source area of the TFT <b>121</b> to be electrically connected. By forming the bent portions K, it is possible to form the data lines <b>102</b>T and <b>102</b>B or the TFTs <b>120</b>, <b>121</b> within the sealing-side light-emitting area <b>73</b>.

In the bank area <b>21</b>AR, the driving TFTs <b>122</b> and <b>123</b> are provided to overlap the bank area <b>21</b>AR.

A drain area <b>41</b>D (which will be described below) of the TFT <b>122</b> is connected to a first pixel electrode <b>23</b><i>a </i>(which will be described below) through a contact hole <b>44</b><i>a </i>(which will be described below). Also, a drain area of the TFT <b>123</b>, which is a high concentration impurity area <b>41</b>D, is connected to a second pixel electrode <b>23</b><i>b </i>(which will be described below) through a contact hole <b>44</b><i>a. </i>

Also, a source area of the TFT <b>122</b>, which is a high concentration impurity area <b>41</b>S (which will be described below), is connected to the power line <b>103</b> through a contact hole <b>43</b><i>a </i>(which will be described below). Also, the source area <b>41</b>S of the TFT <b>123</b> is connected to the power line <b>103</b> through the contact hole <b>43</b><i>a. </i>

A gate electrode <b>42</b> of the TFT <b>122</b> is electrically connected to the drain electrode of the TFT <b>120</b>. A part of the gate electrode <b>42</b> of TFT <b>122</b> is disposed to be opposite to the power line <b>103</b> with an interlayer insulation film interposed therebetween to thereby form the storage capacitor CT which is described above.

The gate electrode <b>42</b> of the TFT <b>123</b> is electrically connected to the drain electrode of the TFT <b>121</b>. A part of the gate electrode <b>42</b> of the TFT <b>123</b> is disposed to be opposite to the power line <b>103</b> with an interlayer insulation film interposed therebetween to form the storage capacitor CB which is described above. As a result, the storage capacitors CT and CB overlap the sealing-side light-emitting area <b>73</b>.

A cross-sectional view of a sub-pixel D will now be described with reference to <figref idrefs="DRAWINGS">FIG. 4</figref>.

As shown in <figref idrefs="DRAWINGS">FIG. 4</figref>, the EL display device <b>1</b> includes a TFT element <b>11</b>, a light-emitting functional layer <b>12</b>, and a sealing member <b>13</b>, which are provided between the substrate <b>20</b> and the cover substrate (sealing member) <b>46</b>. Also, the EL display device <b>1</b> includes a sealing-side light-emitting area <b>73</b> for passing light emitted from the light-emitting functional layer <b>12</b> through the sealing member <b>13</b> and emitting the light from the cover substrate <b>46</b>, and a substrate-side light-emitting area <b>74</b> for passing light emitted from the light-emitting functional layer <b>12</b> through the TFT element <b>11</b> and emitting the light from the substrate <b>20</b>, thereby performing sealing-side light-emitting operation <b>73</b><i>a </i>and substrate-side light-emitting operation <b>74</b><i>a</i>, respectively.

Each component of the EL display device <b>1</b> will now be described in detail.

The substrate <b>20</b> is formed of a transparent substrate for performing substrate-side light-emitting operation. Examples of the transparent substrate include a glass substrate or a resin substrate. The glass substrate has a relatively high heat resistance, so that it is possible to easily form TFT on the glass substrate by a well-known semiconductor manufacturing process. Meanwhile, since the resin substrate has a good flexibility, it is suitable to a flexible EL display device <b>1</b>.

The TFT element <b>11</b> provided on the substrate <b>20</b> will now be described.

The TFT element <b>11</b> has TFTs <b>122</b> and <b>123</b> to allow the light-emitting functional layer <b>12</b> to emit light by an active matrix drive method. The TFTs <b>122</b> and <b>123</b> are switching elements for performing sealing-side light-emitting operation and substrate-side light-emitting operation, respectively. The two TFTs are formed in each sub-pixel D of an actual display area <b>4</b>. Also, in the vicinity of the TFTs <b>122</b> and <b>123</b>, a silicon layer <b>41</b>, a gate insulation layer <b>82</b>, a gate electrode <b>42</b>, an interlayer insulation film <b>83</b>, a source electrode <b>43</b> (power line <b>103</b>), a drain electrode <b>44</b>, a passivation film <b>84</b>, and a planarizing film <b>85</b> are sequentially stacked. Also, pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>b </i>are formed on a surface of the planarizing film <b>85</b>.

Although the silicon layer <b>41</b> is formed on the substrate <b>20</b> in the present embodiment, a base protection layer may be provided between the substrate <b>20</b> and the silicon layer <b>41</b>. The base protection layer acts as a barrier layer for preventing diffusion of impurity into the silicon layer <b>41</b> from the substrate <b>20</b>. The base protection layer is mainly made of inorganic material such as SiO₂.

The silicon layer <b>41</b> is made of a semiconductor material, and includes high concentration impurity areas <b>41</b>S and <b>41</b>D and low concentration impurity areas <b>41</b><i>b </i>and <b>41</b><i>c</i>, which are impurity-doped areas, and a channel area <b>41</b><i>a </i>located to face the gate electrode <b>42</b>. The high concentration impurity areas <b>41</b>S, <b>41</b>D are electrically conducting with a source electrode <b>43</b> and a drain electrode <b>44</b>, respectively, as described below. Also, the silicon layer <b>41</b> is a poly-silicon layer obtained by forming an amorphous silicon layer on a base protection layer <b>81</b> using a plasma CVD method and then growing crystals by a laser annealing method or a rapid heating method. Also, the silicon layer <b>41</b> is partly formed on a surface of the substrate <b>20</b> and is patterned by a well-known photolithography method, so that the silicon layer <b>41</b> is formed in an island shape.

Although the silicon layer <b>41</b> shown in <figref idrefs="DRAWINGS">FIG. 4</figref> is formed in a display area and constitutes the TFTs <b>122</b> and <b>123</b> connected to the pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>b</i>, p-channel and n-channel TFTs (the driving TFTs) included in the scanning line driving circuit <b>80</b> shown in <figref idrefs="DRAWINGS">FIG. 1</figref> have the same basic structure as that of the silicon layer <b>41</b>.

The gate insulation layer <b>82</b> is formed on a surface of the silicon layer <b>41</b> to isolate from the gate electrode <b>42</b>. The gate insulation layer <b>82</b> is mainly made of SiO₂and/or SiN, and is formed of a thickness of about 30 to 200 nm by a plasma CVD method or a heat-oxidation method.

The gate electrode <b>42</b> is made by forming a doped silicon or silicide film, or a metallic film such as an aluminum film, a chromium film, or a tantalum film on the entire surface of the gate insulation layer <b>82</b>, and then patterning it by a photolithography method. The gate electrode <b>42</b> has a film thickness of about 500 nm.

The interlayer insulation film <b>83</b> acts to cover and planarize the gate electrode <b>42</b>, and at the same time, to isolate the source electrode <b>43</b> and the drain electrode <b>44</b> from the gate electrode <b>42</b>. The interlayer insulation film <b>83</b> is formed by a coating method, such as spin coat method, or a vapor deposition method, such as CVD (chemical vapor deposition) method. In case of the coating method, the interlayer insulation film <b>83</b> is formed by mixing inorganic material, such as SOG film, or organic material, such as acrylic resin, with a solvent, coating it, and then performing a heat treatment process or a baking process on it. In case of the vapor deposition method, the interlayer insulation film <b>83</b> is formed of SiO₂or SiN.

The source electrode <b>43</b> and the drain electrode <b>44</b> are formed on a surface of the interlayer insulation film <b>83</b>. Also, contact holes <b>43</b><i>a </i>and <b>44</b><i>a </i>are previously formed in the interlayer insulation film <b>83</b>. Thus, when the source electrode <b>43</b> and the drain electrode <b>44</b> are formed, the source electrode <b>43</b> and the drain electrode <b>44</b> are connected to the high concentration impurity area <b>41</b>S and <b>41</b>D, respectively.

In order to form the source electrode <b>43</b> and the drain electrode <b>44</b>, a metallic film, such as aluminum, chromium, or tantalum, having a film thickness of about 200 to 800 nm is formed to cover the interlayer insulation film <b>83</b>. Then, an etching mask is formed to cover an area in which the source electrode <b>43</b> and the drain electrode <b>44</b> are to be formed. Finally, the metallic film is etched, thereby forming the source electrode <b>43</b> and the drain electrode <b>44</b>.

The passivation film <b>84</b> is made of SiN by a vapor deposition method such as CVD. The passivation film <b>84</b> acts to prevent water from being permeated. Thus, when the planarizing film <b>85</b> is formed, the passivation film <b>84</b> protects water contained in a solvent from being permeated into the TFTs <b>122</b> and <b>123</b>.

The planarizing film <b>85</b> acts to cover and planarize the uneven passivation film <b>84</b> formed when the source electrode <b>43</b> and the drain electrode <b>44</b> are formed. Accordingly, a surface of the planarizing film <b>85</b>, i.e., a surface of the pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>b</i>, is planarized. The planarizing film <b>85</b> also acts as an interlayer insulation layer.

In order to form the planarizing film <b>85</b>, a liquid material containing acrylic resin is applied by a spin coat method, and then cured by a heat treatment process. By performing the spin coat method, the unevenness of the source electrode <b>43</b> and the drain electrode <b>44</b> is covered and planarized.

The pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>b </i>are formed on the planarizing film <b>85</b> and contact holes are formed with the planarizing film <b>85</b> interposed therebetween. The pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>b </i>and the drain electrode <b>44</b> are connected to each other through wires embedded in the contact holes. That is, the pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>h </i>are electrically connected to the high concentration impurity area <b>41</b>D of the silicon layer <b>41</b> through the drain electrode <b>44</b>.

The TFT (the driving TFT) included in the scanning line driving circuit <b>80</b> and the inspection circuit <b>90</b>, e.g., n-channel or p-channel TFT constituting a reverser included in a shift register, has the same structure as that of the TFTs <b>122</b> and <b>123</b> except that it is not connected to the pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>b</i>, and is formed by the same process.

The pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>b</i>, the light-emitting functional layer <b>12</b>, and a cathode electrode (counter electrode) <b>50</b>, which are formed on the TFT element <b>11</b>, will now be described.

The pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>b </i>are a first pixel electrode corresponding to the sealing-side light-emitting area <b>73</b>, and a second pixel electrode corresponding to the substrate-side light-emitting area <b>74</b>, respectively. The first pixel electrode <b>23</b><i>a </i>and the second pixel electrode <b>23</b><i>b </i>are made of a transparent metal such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide: registered trademark of Idemitsu Kosan Co., Ltd.). Preferably, the first pixel electrode <b>23</b><i>a </i>and the second pixel electrode <b>23</b><i>b </i>are made of a single structure or double structure of the metal.

A light-shielding layer <b>71</b> having a light-reflecting property is provided between the first pixel electrode <b>23</b><i>a </i>and the planarizing film <b>85</b>. The light-shielding layer <b>71</b> is made of a metallic film, such as Al, Cr, Ta, Mo, Ti, and W. The light-shielding layer <b>71</b> and the TFT <b>122</b> overlap each other with the planarizing film <b>85</b> interposed therebetween in plan view. In other words, the light-shielding layer <b>71</b> covers the TFT <b>122</b> when viewed from the cover substrate <b>46</b> side. Also, the TFT <b>122</b> is not squeezed into the substrate-side light-emitting area <b>74</b>. Thus, light emitted from the substrate-side light-emitting area <b>74</b> will not pass through the TFT <b>122</b>.

Although the light-shielding layer <b>71</b> has a light-reflecting property in the present embodiment, the light-shielding layer <b>71</b> may have a light-absorbing property. In this case, the light-shielding layer <b>71</b> is preferably formed of a pigment dispersing resin.

In addition, although the light-shielding layer <b>71</b> and the TFT <b>122</b> overlap each other in plan view in the present embodiment, the light-shielding layer <b>71</b> and the TFT <b>123</b> may overlap each other in plan view.

Also, in the present embodiment, ‘overlap each other’ implies ‘overlap each other completely or partly’.

On the pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>b</i>, the light-emitting functional layer <b>12</b> and the cathode electrode <b>50</b> are formed. The light-emitting functional layer <b>12</b> includes a hole injecting/carrying layer <b>70</b> and an organic EL layer <b>60</b>.

The hole injecting/carrying layer <b>70</b> is made of, for example, polythiophene derivatives, polypyrrole derivatives, or polythiophene derivatives- or polypyrrole derivatives-doped materials. In more detail, the hole injecting/carrying layer <b>70</b> is made of 3,4-polyethylenedioxythiophene/polystyrenesulfonate (PEDOT/PSS) dispersion, which is formed by dispersing 3,4-polyethylenedioxythiophene in polystyrenesulfonate as a dispersion medium and then dispersing it in water.

The organic EL layer <b>60</b> employs well-known luminescent materials emitting fluorescence or phosphorescence. It preferably employs (poly)fluorene derivatives (PF), (poly)p-phenylene vinylene derivatives (PPV), polyphenylene derivatives (PP), poly-p-phenylene derivatives (PPP), polyvinylcarbazole (PVK), polythiophene derivatives, or polymethylphenylsilane (PMPS).

In addition, high molecular substances, such as perylene pigment, coumarin pigment, or rhodamine pigment, or low molecular substances, such as rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadien, nilered, coumarin 6, or quinacridone, may be doped into the above-mentioned high molecular materials as the luminescent materials.

Further, instead of the above-mentioned high molecular materials, well-known low molecular materials may be employed. The organic EL layer <b>60</b> preferably has a film thickness of about 100 nm.

In the EL display device <b>1</b> according to the present embodiment, the organic EL layer <b>60</b> is formed such that its light-emitting wavelengths correspond to three primary colors of light. For example, a red-color organic EL layer (<b>60</b>R) whose light-emitting wavelength corresponds to red color, a green-color organic EL layer (<b>60</b>G) whose light-emitting wavelength corresponds to green color, and a blue-color organic EL layer (<b>60</b>B) whose light-emitting wavelength corresponds to blue color are provided in sub-pixels R, G, and B, respectively. At this time, the sub-pixels R, G, and B constitute a single pixel for color displaying.

The hole injecting/carrying layer <b>70</b> and the organic EL layer <b>60</b> are commonly formed on the sealing-side light-emitting area <b>73</b> of the sub-pixel D(n+1) and the substrate-side light-emitting area <b>74</b> of the sub-pixel D(n). The hole injecting/carrying layer <b>70</b> and the organic EL layer <b>60</b> are formed as the light-emitting functional layer area <b>12</b>AR surrounded by the organic bank (partition wall) <b>21</b> partitioning a plurality of sub-pixels (see <figref idrefs="DRAWINGS">FIG. 3</figref>).

Also, a lyophilic control layer <b>25</b> is formed between the organic bank <b>21</b> and the planarizing film <b>85</b>, or the first pixel electrode <b>23</b><i>a </i>and the second pixel electrode <b>23</b><i>b. </i>

The lyophilic control layer <b>25</b> is mainly made of lyophilic material such as SiO2, and allows the hole injecting/carrying layer <b>70</b> and the organic EL layer <b>60</b> to spread above the pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>b</i>. Also, the lyophilic control layer <b>25</b> is formed between the first pixel electrode <b>23</b><i>a </i>and the second pixel electrode <b>23</b><i>b</i>. Since the lyophilic control layer <b>25</b> is formed at a step part formed by the light-shielding layer <b>71</b>, concentrated current or short-circuit at the step part can be prevented.

The organic bank <b>21</b> is made of acrylic resin or polyimide resin, and its surface has a lyophobic property higher than the lyophilic control layer <b>25</b>. Inside an opening <b>25</b><i>a </i>formed in the lyophilic control layer <b>25</b> and an opening <b>21</b><i>a </i>formed in the organic bank <b>21</b>, the hole injecting/carrying layer <b>70</b> and the organic EL layer <b>60</b> are stacked in this order on the pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>b. </i>

The organic bank <b>21</b> and the TFTs <b>122</b> and <b>123</b> overlap each other with the planarizing film <b>85</b> interposed therebetween in plan view. In other words, the organic bank <b>21</b> covers the TFTs <b>122</b> and <b>123</b> when viewed from the cover substrate <b>46</b> side. Also, the TFTs <b>122</b> and <b>123</b> is configured not to be squeezed into the sealing-side light-emitting area <b>73</b>.

Also, the term ‘lyophilic’ in the lyophilic control layer <b>25</b> according to the present embodiment implies that the lyophilic control layer <b>25</b> has a higher lyophilicity compared with the acrylic resin or polyimide resin constituting the organic bank <b>21</b>.

Although the light-emitting functional layer <b>12</b> has a two-layered structure composed of the hole injecting/carrying layer <b>70</b> and the organic EL layer <b>60</b> in the present embodiment, it may have a three-layered structure composed of the hole injecting/carrying layer <b>70</b>, the organic EL layer <b>60</b>, and an electron injecting layer.

In this case, as a preferable electron injecting layer, for example, a layer composed of a bathocuproin-deposited film and a cesium-deposited film is employed. The layer composed of a bathocuproin-deposited film and a cesium-deposited film is formed by an evaporation method in which bathocuproin and cesium are used as evaporation sources.

In addition to the above-mentioned materials, the electron injecting layer may be made of materials including halogenide or oxide of alkali metals, alkaline earth metals, or rare-earth metals. Examples of alkali metals include Li, Na, and Cs. Examples of alkaline earth metals include Ca, Ba, and Sr. Examples of rare-earth metals include Sm, Th, and Er. These metals are preferably formed as fluoride, but may be formed as halogenide, i.e., chloride or bromide, or oxide. Among such compounds which are materials for forming the electron injecting layer B, materials such as LiF which can be deposited can be manufactured to have an ultrafine particle which has a particle diameter of 1 (m or less by a deposition method by a solvent trap method or cold trap method (e.g., see ‘Explanation of dispersion (cohesion and its practical application’ (1992), p. 30). Accordingly, by uniformly dispersing the ultrafine particle in a dispersion medium to form a dispersion (colloid), a coating performed by a liquid discharging method, i.e., a film-forming performed by a liquid phase process becomes possible.

The cathode electrode <b>50</b> is formed above the light-emitting functional layer <b>12</b> and above the organic bank <b>21</b>.

The cathode electrode <b>50</b> has a wider area than a total of the actual display area <b>4</b> and the dummy area <b>5</b> shown in <figref idrefs="DRAWINGS">FIG. 1</figref>, and is formed to cover them. The cathode electrode <b>50</b> is preferably made of a material which has a high electron injection effect such as Ca, Mg, Na, Li, or metallic compounds. Examples of the metallic compounds include metallic fluoride such as calcium fluoride, metallic oxide such as lithium oxide, or metallo-organic complex such as acetylacetonato calcium. However, these materials have a very large electrical resistance and cannot act as an electrode. Thus, they may be combined with a metal layer, such as Al, Au, Ag, or Cu, or a metallic oxide, such as ITO (Indium Tin Oxide) or tin oxide to form a multilayer structure. In the present embodiment, a multilayer structure composed of lithium fluoride, Mg, and ITO having a film thickness adjusted to be transparent is used.

The light-shielding layer <b>72</b> is also formed on the cathode electrode <b>50</b>.

The light-shielding layer <b>72</b> has a light-reflecting property, and is formed within the substrate-side light-emitting area <b>74</b> and above the organic bank <b>21</b>. The light-shielding layer <b>72</b> is made of Al, Cr, Ta, Mo, Ti or W, like the above-mentioned light-shielding layer <b>71</b>. The light-shielding layer <b>72</b> is formed by defining the substrate-side light-emitting area <b>74</b> and the organic bank, and is configured not to be squeezed into the sealing-side light-emitting area <b>73</b>.

The light-shielding layer <b>71</b> formed in the sealing-side light-emitting area <b>73</b> and the light-shielding layer <b>72</b> formed in the substrate-side light-emitting area <b>74</b> overlap each other at their end portions or partly in plan view. Accordingly, when the EL display device <b>1</b> is in a non-light-emitting state, the entire surface of the actual display area <b>4</b> is covered by the light-shielding layer when viewed from the sealing side or from the substrate side. Therefore, light leaking does not occur.

Meanwhile, when the EL display device <b>1</b> is in a light-emitting state, light emitted from the sealing-side light-emitting area <b>73</b> is emitted only to the sealing-side light-emitting area <b>73</b>, and light emitted from the substrate-side light-emitting area <b>74</b> is emitted only to the substrate-side light-emitting area <b>74</b>.

Although the light-shielding layer <b>72</b> has a light-reflecting property in the present embodiment, the light-shielding layer <b>72</b> may have a light-absorbing property. In this case, the light-shielding layer <b>72</b> is preferably formed of pigment dispersing resin.

The sealing member <b>13</b> formed above the cathode electrode <b>50</b> will now be described.

The sealing member <b>13</b> is formed between the cathode electrode <b>50</b> and the cover substrate <b>46</b> and includes a transparent protection layer <b>45</b>A and an adhesive layer <b>45</b>B, which are sequentially stacked from the cathode electrode <b>50</b>. Also, the cover substrate <b>46</b> is provided on above the adhesive layer <b>45</b>B.

The transparent protection layer <b>45</b>A transmits light, and acts as a gas barrier which prevents permeation of water or oxygen from the outside. The transparent protection layer <b>45</b>A is made of SiO_x, SiN_x, or SiO_xN_y. To use SiN_x, it has to become thin enough to be transparent.

The adhesive layer <b>45</b>B is used to attach the cover substrate <b>46</b> to the transparent protection layer <b>45</b>A, and acts as a buffer which absorbs shock from the outside of the cover substrate <b>46</b>.

The cover substrate <b>46</b> is formed of a transparent substrate to perform a substrate-side light-emitting operation. A glass substrate or a resin substrate is employed as a transparent substrate. Also, the cover substrate <b>46</b> preferably has an insulating property.

Operation of the EL display device <b>1</b> thus constructed will now be described.

When voltage is applied from a gate wire (not shown) to the gate electrode <b>42</b>, current flows from the source electrode <b>43</b> to the drain electrode <b>44</b> by electric field generated in the vicinity of the gate electrode <b>42</b>, thereby turning on/off the TFTs <b>122</b> and <b>123</b>.

When the TFT <b>122</b> is turned on, current flows between the cathode electrode <b>50</b> and the first pixel electrode <b>23</b><i>a</i>, and electrons and holes are combined in the organic EL layer <b>60</b>, thereby emitting light. Also, light-emitting intensity is controlled according to the amount of the current. The emitted light is not emitted to the first pixel electrode <b>23</b><i>a </i>in which the light-shielding layer <b>71</b> is formed, but passes through the cathode electrode <b>50</b> and the cover substrate <b>46</b> to be emitted from the sealing-side light-emitting area <b>73</b>. Since the light-shielding layer <b>71</b> has a light-reflecting property, the light emitted to the first pixel electrode <b>23</b><i>a </i>is reflected by the light-shielding layer <b>71</b>, passes through the cover substrate <b>46</b>, and emits from the sealing-side light-emitting area <b>73</b>. Accordingly, light-emitting in the sealing-side light-emitting area <b>73</b> is controlled according to the TFT <b>122</b>.

Meanwhile, when the TFT <b>123</b> is turned on, current flows between the cathode electrode <b>50</b> and the second pixel electrode <b>23</b><i>b</i>, and electrons and holes are combined in the organic EL layer <b>60</b>, thereby emitting light. Also, light-emitting intensity is controlled according to the amount of the current. The emitted light is not emitted to the cathode electrode <b>50</b> in which the light-shielding layer <b>72</b> is formed, but passes through the second pixel electrode <b>23</b><i>b </i>and the substrate <b>20</b> to be emitted from the substrate-side light-emitting area <b>74</b>. Since the light-shielding layer <b>72</b> has a light-reflecting property, the light emitted to the cathode electrode <b>23</b><i>a </i>is reflected by the light-shielding layer <b>72</b>, passes through the substrate <b>20</b>, and emits from the substrate-side light-emitting area <b>74</b>. Accordingly, light emitting in the substrate-side light-emitting area <b>74</b> is controlled according to the TFT <b>123</b>.

Since TFTs <b>122</b> and <b>123</b> are independently driven in the EL display device <b>1</b> according to the present embodiment, light emits independently in the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b>. That is, by driving the TFTs <b>122</b> and <b>123</b> independently, different images can be simultaneously displayed on the front side and the rear side of the EL display device <b>1</b>.

The sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b> are formed in each sub-pixel which emits R, G, or B color, thereby displaying full color on both sides of the EL display device <b>1</b>.

As described above, in the EL display device <b>1</b> according to the present embodiment, the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b> are formed in each sub-pixel, and the light-emitting functional layer <b>12</b> emits light independently in the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b>, thereby emitting light to the cover substrate <b>46</b> and the substrate <b>20</b> independently in each sub-pixel.

For example, when there are RGB color sub-pixels within a unit pixel, full-color display can be performed in the unit pixel and, at the same time, can be differently performed in the cover substrate <b>46</b> and the substrate <b>20</b>.

In the present embodiment, since light can be independently emitted to the cover substrate <b>46</b> and the substrate <b>20</b> in each sub-pixel, problems in the conventional double-sided light-emitting EL display device can be solved. In the related art, since an opposite side of an EL display device can be seen, an image is reversed on the front side and the rear side of a panel. Accordingly, it was not possible to display different images simultaneously on the front side and the rear side of the panel. On the contrary, according to the invention, since the light-shielding layers <b>71</b> and <b>72</b> are formed in the first pixel electrode <b>23</b><i>a </i>in the sealing-side light-emitting area <b>73</b> and the cathode electrode <b>50</b> in the substrate-side light-emitting area <b>74</b>, and the light-emitting functional layer <b>12</b> emits light independently in the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b>, an opposite side of the EL display device <b>1</b> cannot be seen and an image cannot be reversed on the front side and the rear side of the panel.

Also, since the light-emitting functional layer <b>12</b> emits light independently in the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b>, it is possible to easily adjust luminance balance in each area <b>73</b> and <b>74</b>, and to easily change the amount of information in each area <b>73</b> and <b>74</b>.

Also, since the light-shielding layer <b>71</b> formed in the first pixel electrode <b>23</b><i>a </i>and the light-shielding layer <b>72</b> formed in the cathode electrode <b>50</b> have a light-reflecting property, it is possible to improve light-emitting efficiency to display an image with a high luminance.

In more detail, light emitted from the light-emitting functional layer <b>12</b> in the sealing-side light-emitting area <b>73</b> passes through the cathode electrode <b>50</b> and the cover substrate <b>46</b> and, at the same time, is reflected by the light-shielding layer <b>71</b> formed in the first pixel electrode <b>23</b><i>a </i>and then passes through the cathode electrode <b>50</b> and the sealing member. Meanwhile, light emitted from the light-emitting functional layer <b>12</b> in the substrate-side light-emitting area <b>74</b> passes through the second pixel electrode <b>23</b><i>b </i>and the substrate <b>20</b>, and at the same time, is reflected by the light-shielding layer <b>72</b> formed in the cathode electrode <b>50</b> and then passes through the second pixel electrode <b>23</b><i>b </i>and the substrate <b>20</b>. Accordingly, since the light-shielding layer has a light-reflecting property, it is possible to improve light-emitting efficiency in the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b>.

In the EL display device <b>1</b>, the TFTs <b>122</b> and <b>123</b> are connected to the first pixel electrode <b>23</b><i>a </i>and the second pixel electrode <b>23</b><i>b</i>, respectively, and the light-emitting functional layer <b>12</b> can emit light by driving the TFTs <b>122</b> and <b>123</b>. Accordingly, the light-emitting functional layer <b>12</b> can emit light independently in the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b>.

In the EL display device <b>1</b>, since the planarizing film <b>85</b> is formed between the first and second pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>b </i>and the TFTs <b>122</b> and <b>123</b>, the first pixel electrode <b>23</b><i>a </i>and the second pixel electrode <b>23</b><i>b </i>can be formed on a planarized surface.

Also, since the planarizing film <b>85</b> is formed, a light-emitting area can be formed above the TFTs <b>122</b> and <b>123</b>. Accordingly, the sealing-side light-emitting area <b>73</b> can be provided above the TFT <b>122</b>, thereby improving an aperture ratio.

Also, in the EL display device <b>1</b>, since the light-shielding layer <b>71</b> formed on the first pixel electrode <b>23</b><i>a </i>in the sealing-side light-emitting area <b>73</b> overlaps the TFT <b>122</b> with the planarizing film <b>85</b> interposed therebetween in plan view, light emitted from the substrate-side light-emitting area <b>74</b> passes through the second pixel electrode <b>23</b><i>b </i>and the substrate <b>20</b> without being blocked by the TFT <b>122</b>. Accordingly, it is possible to improve efficiency of extracting the light emitted from the substrate-side light-emitting area <b>74</b>.

Meanwhile, in the related art, when the emitted light is extracted to the substrate side, the emitted light is shielded by a switching element or an array wire, thereby reducing the efficiency of extracting the emitted light. However, the present embodiment can solve this problem.

Also, in the EL display device <b>1</b>, since the organic bank <b>21</b> is formed and the organic bank <b>21</b> overlaps the TFTs <b>122</b> and <b>123</b> with the planarizing film <b>85</b> interposed therebetween in plan view, light emitted from the substrate-side light-emitting area <b>74</b> passes through the second pixel electrode <b>23</b><i>b </i>and the substrate <b>20</b> without being blocked by the TFT <b>123</b>. Accordingly, it is possible to improve efficiency of extracting the light emitted from the substrate-side light-emitting area <b>74</b>.

Meanwhile, in the related art, when the emitted light is extracted to the substrate <b>20</b>, the emitted light is shielded by a switching element or an array wire, thereby reducing the efficiency of extracting the emitted light. However, the present embodiment can solve this problem.

In the EL display device <b>1</b>, the light-emitting functional layer <b>12</b> is formed commonly in the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b>. Accordingly, since it is not necessary to form the light-emitting functional layer <b>12</b> independently in the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b>, the light-emitting functional layer <b>12</b> can be easily formed.

In the EL display device, since the data lines <b>102</b>T and <b>102</b>B, the power line <b>103</b>, the TFTs <b>120</b>, <b>121</b>, and the storage capacitors CT AND CB are not formed in the substrate-side light-emitting area <b>74</b>, the substrate-side light-emitting operation <b>74</b><i>a </i>can be performed. Accordingly, it is possible to improve the efficiency of extracting the emitted light.

Also, since the data lines <b>102</b>T and <b>102</b>B, the power line <b>103</b>, the TFTs <b>120</b>, <b>121</b>, and the storage capacitors CT AND CB are formed in the sealing-side light-emitting area <b>73</b> and the bank area <b>21</b>, it can be formed in an area in which the emitted light is not shielded.

First Modification of EL Display Device

A modified example 1 of the EL display device will now be described.

A difference between the EL display device <b>1</b> and the modified EL display device will be described.

Although the light-shielding layers <b>71</b> and <b>72</b> have a light-reflecting property in the above-mentioned EL display device <b>1</b>, the light-shielding layers <b>71</b> and <b>72</b> have a light-absorbing property in the modified example 1.

In the EL display device thus configured, when the light-shielding layer <b>72</b> having a light-absorbing property is formed on the cathode electrode <b>50</b> in the substrate-side light-emitting area <b>74</b>, the light-shielding layer <b>72</b> absorbs external light which is incident from the cover substrate <b>46</b>. Accordingly, it is possible to improve the contrast of an image displayed on the cover substrate <b>46</b>.

When the light-shielding layer <b>71</b> having a light-absorbing property is formed on the first pixel electrode <b>23</b><i>a </i>in the sealing-side light-emitting area <b>73</b>, the light-shielding layer <b>71</b> absorbs external light which is incident from the substrate <b>20</b>. Accordingly, it is possible to improve the contrast of an image displayed on the substrate <b>20</b>.

Accordingly, since the light-shielding layers <b>71</b> and <b>72</b> have a light-absorbing property and act as a black matrix, it is possible to improve the contrast of an image displayed on the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b>.

Second Modification of EL Display Device

A modified example 2 of the EL display device will now be described.

A difference between the EL display device <b>1</b> and the modified EL display device will be described.

Although the light-emitting functional layer <b>12</b> is formed commonly in each sub-pixel in the above-mentioned EL display device <b>1</b>, the light-emitting functional layer <b>12</b> is formed independently in the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b> in the present modified example 2.

In the EL display device <b>1</b> thus configured, since the light-emitting functional layer <b>12</b> is formed independently in the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b>, it is possible to form the light-emitting functional layer <b>12</b> having a stable layer thickness in each light-emitting area.

Although the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b> are formed in a sub-pixel in the EL display device <b>1</b>, the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b> may be formed in a panel of the EL display device. In this case, it is possible to display an image on the cover substrate <b>46</b> in the sealing-side light-emitting area <b>73</b> of the panel, while it is possible to display an image on the substrate <b>20</b> in the substrate-side light-emitting area <b>74</b> of the panel. Also, the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b> can display different images independently.

Method of Manufacturing EL Display Device

A method of manufacturing the EL display device <b>1</b> will now be described with reference to <figref idrefs="DRAWINGS">FIGS. 5 to 7</figref>.

<figref idrefs="DRAWINGS">FIGS. 5 to 7</figref> are views corresponding to <figref idrefs="DRAWINGS">FIG. 2</figref>, and are enlarged cross-sectional views of a single sub-pixel in the actual display area <b>4</b> of the EL display device <b>1</b>.

As shown in <figref idrefs="DRAWINGS">FIG. 5A</figref>, the TFTs <b>122</b> and <b>123</b> are formed on the substrate <b>20</b> (forming of first and second switching elements). This is performed by using a well-known semiconductor manufacture process.

Also, above the TFTs <b>122</b> and <b>123</b>, the interlayer insulation film <b>83</b>, contact holes <b>43</b><i>a</i>, <b>44</b><i>a</i>, the source electrode <b>43</b> and the drain electrode <b>44</b> are sequentially formed. After forming the passivation film <b>84</b> on the entire surface, the drain electrode <b>44</b> is partly exposed. The exposed part is joined to the pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>b </i>afterwards.

As shown in <figref idrefs="DRAWINGS">FIG. 5B</figref>, after forming the planarizing film <b>85</b>, a contact hole <b>85</b><i>a </i>is formed to correspond to the exposed part of the drain electrode <b>44</b>.

The planarizing film <b>85</b> is a layer which is coated by a coating method such as a spin coat method and then formed by a heat treatment process or curing process. The planarizing film <b>85</b> is made of materials containing organic materials as a main component. The planarizing film <b>85</b> is preferably made of acrylic resin. In addition, the planarizing film <b>85</b> may be made of polyimide resin or benzo cyclo butane (BCB) resin.

Next, as shown in <figref idrefs="DRAWINGS">FIG. 5C</figref>, the light-shielding layer <b>71</b> is formed (forming of a light-shielding layer adjacent to the first pixel electrode in the sealing-side light-emitting area).

The light-shielding layer <b>71</b> is located below the first pixel electrode <b>23</b><i>a </i>to be formed later and is formed in the sealing-side light-emitting area <b>73</b>. The light-shielding layer <b>71</b> has a light-reflecting property or light-absorbing property. When the light-shielding layer <b>71</b> has a light-reflecting property, light can be emitted in the sealing-side light-emitting area using reflected light, thereby improving light-emitting efficiency. When the light-shielding layer <b>71</b> has a light-absorbing property, it acts as a black matrix, thereby improving the contrast.

When the light-shielding layer <b>71</b> has a light-reflecting property, a metallic film such as Al, Cr, Ta, Mo, Ti, or W is formed on the entire surface of the planarizing film <b>85</b>, and then is formed in a predetermined pattern by a photolithography method or a patterning method.

Meanwhile, when the light-shielding layer <b>71</b> has a light-absorbing property, a liquid material containing pigment dispersing resin is applied on the entire surface of the planarizing film <b>85</b>, is subjected to a cure process, and then is formed in a predetermined pattern through a photolithography method or a patterning method.

Next, as shown in <figref idrefs="DRAWINGS">FIG. 5D</figref>, the first pixel electrode <b>23</b><i>a </i>and the second pixel electrode <b>23</b><i>b </i>are formed (forming the first and second pixel electrodes which are respectively connected to the first and second switching elements).

The first pixel electrode <b>23</b><i>a </i>and the second pixel electrode <b>23</b><i>b </i>are respectively connected to the drain electrode <b>44</b> of the TFTs <b>122</b> and <b>123</b> through the contact hole <b>85</b><i>a </i>of the planarizing film <b>85</b>. The first pixel electrode <b>23</b><i>a </i>and the second pixel electrode <b>23</b><i>b </i>are formed using a transparent conductive film such as ITO as described above. Also, it is formed in a predetermined pattern through a photolithography method or a patterning method.

The first pixel electrode <b>23</b><i>a </i>and the second pixel electrode <b>23</b><i>b </i>are formed in each sub-pixel. Accordingly, the sealing-side light-emitting operation and the substrate-side light-emitting operation can be performed in each sub-pixel.

Next, as shown in <figref idrefs="DRAWINGS">FIG. 6A</figref>, the lyophilic control layer <b>25</b> is formed.

In this process, it is formed between the first pixel electrode <b>23</b><i>a </i>and the second pixel electrode <b>23</b><i>b</i>. The lyophilic control layer <b>25</b> is mainly made of a lyophilic material such as SiO₂, and allows the hole injecting/carrying layer <b>70</b> and the organic EL layer <b>60</b> to spread above the pixel electrodes <b>23</b><i>a </i>and <b>23</b><i>b</i>. Since the lyophilic control layer <b>25</b> is formed at a step part formed by the light-shielding layer <b>71</b>, concentrated current or short-circuit at the step part can be prevented.

Next, as shown in <figref idrefs="DRAWINGS">FIG. 6B</figref>, the organic bank <b>21</b> is formed.

This process is performed using a coating method such as a spin coat method. In more detail, resin material such as acrylic resin or polyimide resin is dissolved in a solvent. A solution thus obtained is coated and is then subjected to a cure process. A resist is coated, and then the resist is partly removed by the photolithography method. Next, the resin material in a resist opening is removed, thereby forming the organic bank <b>21</b>. When the organic bank <b>21</b> is made of a photosensitive resin, a process of coating a resist is not necessary.

Next, as shown in <figref idrefs="DRAWINGS">FIG. 6C</figref>, the light-emitting functional layer <b>12</b> is formed (forming a light-emitting functional layer above the first and second pixel electrodes).

In order to form the hole injecting/carrying layer <b>70</b> and the organic EL layer <b>60</b> constituting the light-emitting functional layer <b>12</b>, a liquid discharging method is preferably used. In the liquid discharging method, it is possible to eject and fix a liquid material, which is obtained by dissolving various materials in a preferred solvent, to a minute area. Accordingly, since the photolithography method is not necessary, waste of materials is prevented, thereby reducing manufacturing cost.

Next, as shown in <figref idrefs="DRAWINGS">FIG. 7A</figref>, the cathode electrode <b>50</b> is formed (forming a counter electrode facing the first and second pixel electrodes).

In order to form the cathode electrode <b>50</b>, a deposition method is used. By the deposition method, the cathode electrode <b>50</b> is formed on the entire surface of the actual display area <b>4</b> including the organic EL layer <b>60</b> or the organic bank <b>21</b>.

Although the cathode electrode <b>50</b> is formed on the organic EL layer <b>60</b> in the present embodiment, an electronic injecting layer may be formed between the organic EL layer <b>60</b> and the cathode electrode <b>50</b>. To form the electronic injecting layer, a mask deposition method is used.

Next, as shown in <figref idrefs="DRAWINGS">FIG. 7B</figref>, the light-shielding layer <b>72</b> is formed (forming a light-shielding layer adjacent to each counter electrode in the substrate-side light-emitting area).

To form the light-shielding layer <b>72</b>, the mask deposition method is used. By the mask deposition method, the light-shielding layer <b>72</b> can be formed only in a predetermined part.

The light-shielding layer <b>72</b> is formed on the substrate-side light-emitting area <b>74</b>. Also, the light-shielding area <b>72</b> has a light-reflecting property or light-absorbing property. When the light-shielding layer <b>72</b> has a light-reflecting property, it is possible to emit light in the substrate-side light-emitting area using reflected light, thereby improving light-emitting efficiency. Meanwhile, when the light-shielding layer <b>72</b> has a light-reflecting property, it acts as a black matrix, thereby improving the contrast.

When the light-shielding layer <b>71</b> has a light-reflecting property, a metallic film such as Al, Cr, Ta, Mo, Ti, or W is formed on the entire surface of the planarizing film <b>85</b>, and then is formed in a predetermined pattern by a photolithography method or a patterning method.

Meanwhile, when the light-shielding layer <b>71</b> has a light-absorbing property, a liquid material containing pigment dispersing resin is applied on the entire surface of the planarizing film <b>85</b>, is subjected to a cure process, and then is formed in a predetermined pattern through a photolithography method or a patterning method.

As shown in <figref idrefs="DRAWINGS">FIG. 1</figref>, the transparent protection layer <b>45</b>A is formed above the cathode electrode <b>50</b> and the light-shielding layer <b>72</b>. The transparent protection layer <b>45</b>A is made of SiO_x, SiN_x, or SiO_xN_y. When SiN_xis used, it is necessary to be thin enough to be transparent.

The adhesive layer <b>45</b>B is provided on the transparent protection layer <b>45</b>A and the cover substrate <b>46</b> is attached to the adhesive layer <b>45</b>B (forming a sealing member which seals the light-emitting functional layer). As a result, the EL display device <b>1</b> is completed.

The EL display device <b>1</b> thus configured includes the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b> in a sub-pixel. Accordingly, the EL display device <b>1</b> becomes a double emission type EL display device which can emit light on both faces.

As described above, according to the method of manufacturing the EL display device <b>1</b> of the present embodiment, it is possible to manufacture the EL display device.

Since the first pixel electrode <b>23</b><i>a </i>and the second pixel electrode <b>23</b><i>b </i>are formed in each sub-pixel and the sealing-side light-emitting area <b>73</b> and the substrate-side light-emitting area <b>74</b> are formed in each sub-pixel, the light-emitting functional layer <b>12</b> can emit light independently in each area <b>73</b> and <b>74</b>.

In addition, by the mask deposition method, the light-shielding layer <b>72</b> is formed on the cathode electrode <b>50</b> in the substrate-side light-emitting area <b>74</b>. Accordingly, the light-shielding layer <b>72</b> can be formed by depositing according to a predetermined mask pattern.

Electronic Apparatus

An electronic apparatus according to the invention will now be described with reference to <figref idrefs="DRAWINGS">FIGS. 8 and 9</figref>. <figref idrefs="DRAWINGS">FIG. 8</figref> shows a mobile phone <b>1000</b>, an electronic apparatus according to an embodiment of the invention, which is folded. <figref idrefs="DRAWINGS">FIG. 9</figref> shows a mobile phone <b>1000</b> which is unfolded. The mobile phone <b>1000</b> includes a main body <b>1001</b> and a display unit <b>1002</b>.

The EL display device <b>1</b> according to the above-mentioned embodiments is provided inside the display unit <b>1002</b>. Through the display unit <b>1002</b>, a user can view an image on a front-side display <b>1003</b> and on a rear-side display <b>1004</b>. In the mobile phone <b>1000</b>, the user can view a bright image on the front-side display <b>1003</b> and/or the rear-side display <b>1004</b> according to various operations or conditions, for example, when the mobile phone <b>1000</b> is folded or unfolded.

Although a folder-type mobile phone has been described in the present embodiment, the EL display device according to the invention can be applied to other electronic apparatus.

The EL display device and the electronic apparatus according to the invention are not limited to the above-mentioned exemplary embodiments, but various changes in form and details may be made therein without departing from the scope of the invention.