Memory system and method for strobing data, command and address signals

CROSS-REFERENCE TO RELATED APPLICATION

0001This application is a divisional of U.S. patent application Ser. No. 10/931,472, filed Aug. 31, 2004, now U.S. Pat. No. 7,126,874.

TECHNICAL FIELD

0002This invention relates to memory system and methods, and, more particularly, to a system and method for accurately latching data, command and address signals coupled between a memory controller and a memory device.

BACKGROUND OF THE INVENTION

0003Command, address and write data signals are typically coupled from a memory controller or other device to memory devices, such as synchronous random access memory (“SDRAM”) devices. These command, address and write data signals are typically transmitted in synchronism with a system clock signal. Similarly, read data signals are typically coupled from memory devices to a memory controller or other device in synchronism with the system clock signal. In some cases, the memory devices or memory controller may couple a strobe signal between the memory devices and memory controller along with the command, address and data signals. The system clock signal or strobe signal derived from the system clock signal is used to “capture” the command, address and data signals by clocking latches that store the command, address and data signals. The advantage of coupling a strobe signal between the memory devices and memory controller is that it will be affected by signal skews and propagation delays in the same manner that with the command, address and data signals with which it is transmitted will be affected.

0004The transitions of the system clock signal are typically substantially aligned with transitions of the command, address and data signals. Similarly, the transitions of a received strobe signal are typically substantially aligned with transitions of the command, address and data signals. During the period between these transitions, the command, address and data signals are “valid,” and it is during this valid period, known as an “eye,” that the command, address and data signals must be captured. The system clock signal or received strobe signal normally cannot be used to directly capture command, address and data signals because the transitions of the system clock signal or received strobe signal substantially coincide with the transitions of the command, address and data signals rather than the eye between those transitions. As a result, a quadrature strobe signal that is delayed from the system clock or received strobe signal by 90 degrees must be generated from the system clock signal or received strobe signal. The quadrature strobe signal can latch the command, address and write data signals into the memory device at the center of the “eye” in which the command, address or data signals are valid.

0005Various techniques have been used to generate a quadrature strobe signal in a memory device or memory controller based on a system clock signal. If the frequency of the system clock signal is fixed, a quadrature strobe signal can be generated by a timing circuit that simply generates a transition of the strobe signal a fixed time after a corresponding transition of the system clock signal. However, synchronous memory devices are typically designed and sold to be operated over a wide range of system clock frequencies. Therefore, it is generally not practical to use a fixed timing circuit to generate a quadrature strobe signal from the system clock signal. Instead, as a practical matter, a circuit that can adapt itself to a system clock signal having a range of frequencies must be used.

0006One technique that has been used to ensure the correct timing of a strobe signal relative to captured digital signals is to use a closed loop circuit, such as a phase-lock loop (“PLL”) or delay-lock loop (“DLL”), to generate the quadrature strobe signal. In particular, a closed loop circuit allows the timing of the strobe signal to be adjusted to minimize the phase error between the quadrature strobe signal and the valid eye of the digital signal. Although these closed loop circuits can accurately generate a quadrature strobe signal based on the system clock signal over a substantial range of frequencies of the system clock signal, they are not without their limitations. For example, the propagation delays of the command, address and data signals coupled between a memory controller and a memory device may vary to such an extent that a quadrature strobe signal generated from the system clock can no longer capture these signals during their valid period or eye. A quadrature strobe signal that is generated from a strobe signal coupled from the memory controller or memory device with the transmitted the command, address or data signals can better track variations in the propagation times of the command, address or data signals. However, the phase of the quadrature strobe signal generated from the strobe signal coupled with the transmitted command, address or data signals may not adequately track variations in the propagation times of the transmitted command, address or data signals. The quadrature strobe signal may be further delayed relative to the command, address or data signals in coupling the quadrature strobe from the closed loop circuit generating the strobe signal to a latch that will be used to capture the transmitted command, address or data signals. Therefore, even a quadrature strobe signal generated from a strobe signal transmitted with the command, address or data signals may fail to capture these signals during their valid period or eye. As the speed of memory devices continues to increase, the “eye” during which the command, address and data signals must be captured becomes smaller and smaller, thus making the timing of the quadrature strobe signal even more critical. Capturing command, address and data signals during the eye becomes even more difficult in memory devices and memory controllers in which several bits of data are serially coupled from an external terminal each clock period.

0007There is therefore a need for a system and method for more precisely capturing transmitted command, address and data signals during their eye or valid period, particularly where multiple bits of a command, address or data are transmitted during each clock period.

SUMMARY OF THE INVENTION

0008This invention is directed to a method and system for coupling a command, address or data signal between a memory controller and a memory device. An in-phase strobe signal and a quadrature strobe signal are generated in either the memory controller or memory device. The quadrature strobe signal has signal transitions that are offset from signal transitions of the in-phase strobe signal by 90 degrees. A command, address or data bit is coupled from the device in which the in-phase strobe signal and a quadrature strobe signal were generated, i.e., either the memory controller or memory device, by clocking the command, address or data bit out of the device responsive to a transition of the in-phase strobe signal. The quadrature strobe signal is coupled to the device in which the in-phase strobe signal and a quadrature strobe signal were not generated and used to capture the command, address or data bit at that device responsive to a transition of the quadrature strobe signal.

BRIEF DESCRIPTION OF THE DRAWINGS

<figref idref="DRAWINGS">FIG. 1</figref> is a block diagram of a memory system according to one embodiment of the invention.

<figref idref="DRAWINGS">FIG. 2</figref> is a block diagram of a memory system according to another embodiment of the invention in which several bits of data are transmitted through a data bus on each cycle of a system clock.

<figref idref="DRAWINGS">FIG. 3</figref> is a block diagram of a strobe generator circuit that can be used in the memory systems shown in <figref idref="DRAWINGS">FIGS. 1 and 2</figref>.

<figref idref="DRAWINGS">FIG. 4</figref> is a block diagram of a computer system using the memory system of <figref idref="DRAWINGS">FIGS. 1</figref> or <b>2</b>.

DETAILED DESCRIPTION

0013A memory system <b>10</b> according to one embodiment of the invention is shown in <figref idref="DRAWINGS">FIG. 1</figref>. The memory system includes a memory controller <b>14</b> coupled to a memory device <b>16</b>, such as a synchronous dynamic random access memory (“SDRAM”). In addition to the components normally found in a conventional memory controller, which are designated by the reference numeral <b>18</b>, the memory controller <b>14</b> includes a strobe signal generating circuit <b>20</b> that generates an in-phase strobe signals STROBE_IN-PHand a quadrature strobe signal STROBE_QUADfrom a system clock signal CLK. The STROBE_IN-PHsignal is substantially in phase with the CLK signal while the STROBE_QUADis delayed substantially 90 degrees from the CLK signal. Although the CLK signal is a continuous free-running signal, the STROBE_IN-PHsignal and the STROBE_QUADsignal are generated from the CLK signal only when command, addresses or write data are being coupled from the memory controller <b>14</b>.

0014The STROBE_IN-PHsignal is coupled to the clock input of a plurality of command latches <b>24</b> each of which receives a bit of a memory command from the memory controller circuitry <b>18</b>. The command latches <b>24</b> output the command bits on a command bus <b>26</b> responsive to each rising edge transition of the STROBE_IN-PHsignal. Similarly, The STROBE_IN-PHsignal is coupled to the clock input of a plurality of address latches <b>30</b> and to the clock input of a plurality of write data latches <b>32</b>. Each of the address latches <b>30</b> receives a bit of a memory address from the memory controller circuitry <b>18</b>, and each of the write data latches <b>32</b> receives a bit of write data from the memory controller circuitry <b>18</b>. The address latches <b>30</b> output the address bits on an address bus <b>36</b> responsive to each rising edge transition of the STROBE_IN-PHsignal, and the write data latches <b>32</b> output the write data bits on a data bus <b>38</b> responsive to each rising edge transition and each falling edge transition of the STROBE_IN-PHsignal. The STROBE_QUADsignal from the strobe signal generating circuit <b>20</b> is coupled to a clock input of a pair of strobe signal latches <b>40</b> (only one of which is shown in <figref idref="DRAWINGS">FIG. 1</figref>). One of the latches <b>40</b> has its data input coupled to V_CC, and it is clocked on the rising edge of the STROBE_QUADsignal. The other of the latches <b>40</b> has its data input coupled to ground, and it is clocked on the falling edge of the STROBE_QUADsignal. The outputs of both latches <b>40</b> are coupled to each other so that the QUAD-STROBE signal toggles between high and low in correspondence to the STROBE_QUADsignal.

0015Although <figref idref="DRAWINGS">FIG. 1</figref> shows a single STROBE_IN-PHsignal being coupled to all of the latches <b>24</b>, <b>30</b>, <b>32</b>, it will be understood that separate, respective STROBE_IN-PHsignals may be coupled to the latches <b>24</b>, <b>30</b>, <b>32</b>, and that these separate STROBE_IN-PHsignals need not be all active at the same time. Instead, the STROBE_IN-PHsignals may be coupled to the latch <b>24</b> only when command signals are to being transmitted from the memory controller <b>14</b>, the STROBE_IN-PHsignals may be coupled to the latch <b>30</b> only when address signals are to being transmitted from the memory controller <b>14</b>, and the STROBE_IN-PHsignals may be coupled to the latch <b>32</b> only when write data are to being transmitted from the memory controller <b>14</b>.

0016The command bus <b>26</b>, address bus <b>36</b>, and data bus <b>38</b><b>42</b> are coupled to corresponding buses of the memory device <b>16</b>. More specifically, the bits of the command bus <b>26</b> are coupled to the data input of respective command latches <b>50</b>, the bits of the address bus <b>36</b> are coupled to the data input of respective address latches <b>52</b>, and the bits of the data bus <b>38</b> are coupled to the data input of respective write data latches <b>54</b>. The QUAD-STROBE signal from the latch <b>40</b> is coupled to the memory device <b>16</b> along with the command, address and write data signals, and, because it is coupled from the same type of latch, it has the same timing as those signals. The QUAD-STROBE signal is coupled to the clock input of the latches <b>50</b>, <b>52</b>, <b>54</b> to capture the command bits, address bits and write data bits, respectively. The latches <b>50</b>, <b>52</b> capture command and address signals, respectively, on the rising edge of the QUAD-STROBE signal, and the latch <b>54</b> captures write data signals on both the rising edge and the falling edges of the QUAD-STROBE signal. The captured command bits from the command latches <b>50</b>, the captured address bits from the address latches <b>52</b> and the captured write data bits from the write data latches <b>54</b> are coupled to circuitry found in conventional memory devices, which is designated by reference numeral <b>56</b>. This memory device circuitry <b>56</b> typically includes a row address circuit that receives and decodes row address signals applied to external address terminals of the memory device <b>16</b>, and a column address circuit that receives and decodes column address signals applied to the external address terminals of the memory device <b>16</b>. The memory device circuitry <b>56</b> also includes one or more memory cell arrays that store data written to or read from the array at a location determined by the decoded row address signals and the decoded column address signals. A data path circuit couples read data signals corresponding to the data from the array to data bus terminals of the memory device <b>16</b>, and write data signals corresponding to the data from the data bus terminals of the memory device <b>16</b> to the array. Finally, a command decoder included in the memory device circuitry <b>56</b> decodes a plurality of command signals applied to respective external command terminals of the memory device <b>16</b> to control the operation of the memory device.

0017Significantly, the QUAD-STROBE signal transmitted on the strobe signal line <b>42</b> has transitions that occurs at the approximate midpoint of when the command, address and write data bits are valid. As a result, the command, address and write data bits can be captured during their eye or valid period. In particular, any variation in the propagation times of the command, address, and write data signals will be matched by variations in the propagation times of the QUAD-STROBE signal since the QUAD-STROBE signal is transmitted from the memory controller <b>14</b> to the memory device <b>16</b> along with the command, address and write data bits and in the same manner. Further, the QUAD-STROBE signal is not generated by processing the CLK signal or a received strobe signal, such as the STROBE_IN-PHsignal, so that the QUAD-STROBE signal is not subjected to delays to which the command, address and write data signals are not subjected. As a result, the QUAD-STROBE signal can accurately capture the command, address and write data signals even at very high operating speeds of the memory system <b>10</b>.

0018With further reference to <figref idref="DRAWINGS">FIG. 1</figref>, the memory circuitry <b>56</b> in the memory device <b>16</b> outputs read data signals responsive to memory requests from the memory controller <b>14</b>. Bits of the read data are coupled to the data input of respective read data latches <b>60</b>. The memory device <b>16</b> also includes a strobe generating circuit <b>62</b>, which may be identical to the strobe generating circuit <b>20</b> in the memory controller <b>14</b>. The strobe generating circuit <b>62</b> generates an in-phase strobe signal STROBE_IN-PHand a quadrature strobe signal STROBE_QUADfrom the system clock signal CLK. The STROBE_IN-PHis substantially in phase with the CLK signal while the STROBE_QUADis delayed substantially 90 degrees from the CLK signal. The STROBE_IN-PHsignal is coupled to the clock inputs of the read data latches <b>60</b> so that the bits of read data are coupled to the data bus <b>38</b> responsive to rising and falling edge transitions of the STROBE_IN-PHsignal. The STROBE_QUADsignal from the strobe signal generating circuit <b>62</b> is coupled to the clock input of a pair of strobe signal latches <b>64</b> (only one of which is shown in <figref idref="DRAWINGS">FIG. 1</figref>), one of which has its data input coupled to V_CCand the other of which has its data input coupled to ground. The outputs of the latches <b>64</b> are coupled to each other so the strobe signal latch <b>64</b> generates a QUAD-STROBE signal that follows the STROBE_QUADsignal, and the QUAD-STROBE signal is coupled to the memory controller <b>14</b> through a strobe signal line <b>66</b>.

0019The memory controller <b>14</b> further includes read data latches <b>70</b> that have their data inputs coupled to the data bus <b>38</b>. The clock inputs of the read data latches <b>70</b> are coupled to the strobe signal line <b>66</b> to receive the QUAD-STROBE signal from the memory device <b>16</b>. The QUAD-STROBE signal captures the bits of the read data in the read data latches <b>70</b> in the same manner and with the same advantages obtained in using the QUAD-STROBE signal from the memory controller <b>14</b> to capture the command, address and write data bits in the memory device <b>16</b>, as explained above. The captured read data bits are then coupled from the read data latches <b>70</b> to the memory controller circuitry <b>18</b>.

0020Although the memory system <b>10</b> shown in <figref idref="DRAWINGS">FIG. 1</figref> uses respective QUAD-STROBE signals coupled from both the memory controller <b>14</b> and the memory device <b>16</b>, it should be understood that such is not necessary. Instead, a QUAD-STROBE signal can be coupled from only the memory controller <b>14</b> and used to capture command, address and write data bits, or from only the memory device <b>16</b> and used to capture read data bits. Further, in the event multiple memory devices <b>16</b> are used in a memory system, a single QUAD-STROBE signal may be used for all of the memory devices, or a respective QUAD-STROBE signal may be coupled to the memory controller <b>14</b> from each of the memory devices <b>16</b>. Alternatively, respective QUAD-STROBE signal from each of the memory devices <b>16</b> may be combined into a single QUAD-STROBE signal that is coupled to the memory controller <b>14</b>. Finally, although the command, address and data signals are transmitted from either the memory controller <b>14</b> or the memory device <b>16</b> responsive to a STROBE_IN-PHsignal and captured in the the memory device <b>16</b> or memory controller <b>14</b>, respectively, responsive to the STROBE_QUADsignal, the STROBE_IN-PHand STROBE_QUADsignals may be used in the reverse manner. Specifically, the command, address and data signals may be transmitted from either the memory controller <b>14</b> or the memory device <b>16</b> responsive to the STROBE_QUADsignal and captured in the memory device <b>16</b> or memory controller <b>14</b>, respectively, responsive to the STROBE_IN-PHsignal. Other variations will be apparent to one skilled in the art.

0021The memory system <b>10</b> of <figref idref="DRAWINGS">FIG. 1</figref> couples a single bit on each line of the command bus <b>26</b>, address bus <b>36</b> and data bus <b>38</b> each period of the system clock signal CLK. In another embodiment shown in <figref idref="DRAWINGS">FIG. 2</figref>, a memory system <b>80</b> couples a single bit on each line of the command bus <b>26</b> and the address bus <b>36</b> each period of the system clock signal CLK. However, to increase the data bandwidth of the memory system <b>80</b>, the memory system <b>80</b> couples several bits of data on each line of the data bus <b>38</b> each period of the system clock signal CLK. The memory system <b>80</b> uses many of the same components that are used in the memory system <b>10</b> of <figref idref="DRAWINGS">FIG. 1</figref>. Therefore, in the interest of brevity, these same components are provided with the same references numerals, and an explanation of their structure and operation will not be repeated.

0022The memory system <b>80</b> differs from the memory system <b>10</b> of <figref idref="DRAWINGS">FIG. 1</figref> by using strobe generator circuits <b>82</b>, <b>84</b> in a memory controller <b>86</b> and memory device <b>88</b>, respectively, that generate four STROBE_IN-PHsignals and four STROBE_QUADsignals every two consecutive periods of the CLK signal. These four STROBE_IN-PHsignals and four STROBE_QUADsignals can each be either four strobe pulses generated on respective single output lines or, if the rising and falling edges are used, four STROBE_IN-PHpulses and four STROBE_QUADpulses generated on respective sets of four separate lines. However, to minimize duty cycle distortion, the four STROBE_IN-PHsignals and the four STROBE_QUADsignals are each separate strobe pulses output from the strobe generators <b>82</b>, <b>84</b> on respective lines. The latched write data bits are then sequentially coupled to a respective line of the data bus <b>38</b> responsive to respective ones of the four STROBE_IN-PHsignals. Thus, four sequentially transmitted write data bits are sequentially coupled to the memory device <b>88</b> every two consecutive periods of the system clock signal along with the four QUAD-STROBE signals sequentially generated from the respective STROBE_QUADsignals by a strobe signal latch <b>91</b>.

0023At the memory device <b>88</b>, the four sequentially transmitted write data bits are applied to the data input of a write data latch <b>92</b>, which receives the four sequentially transmitted QUAD-STROBE signals from the strobe signal latch <b>91</b> in the memory controller <b>86</b> at a clock input. As each QUAD-STROBE pulse transitions high, the write data bit being coupled to the data input of the write data latch <b>92</b> is captured in the latch <b>92</b>. At the end of each two consecutive clock periods, four write data bits stored in the latch <b>92</b> are coupled in parallel to the memory device circuitry <b>56</b>.

0024In a similar manner, the strobe generator circuit <b>84</b> in the memory device <b>88</b>, generates four STROBE_IN-PHsignals and four STROBE_QUADsignals every two consecutive periods of the CLK signal. Four read data bits from the memory device circuitry <b>56</b> are latched into a read data latch <b>94</b> in parallel every two consecutive periods of the CLK signal. The latched read data bits are then sequentially coupled to a respective line of the data bus <b>38</b> responsive to respective STROBE_IN-PHsignals, which are also generated by the strobe generator circuit <b>84</b>. The four STROBE_QUADsignals generated by the strobe generator circuit <b>84</b> are also coupled to respective clock inputs of a strobe signal latch <b>96</b>, which sequentially outputs four QUAD-STROBE signals every two consecutive clock cycles that are coupled to the memory controller <b>86</b>. The transmitted read data bits are applied to the data input of the read data latch <b>90</b> and captured in the latch <b>90</b> responsive to the four QUAD-STROBE signals sequentially transmitted from the latch <b>96</b>, which are applied to respective clock inputs. At the end of two consecutive CLK periods, four bits of read data are coupled from the read data latch <b>90</b> to the memory controller circuitry <b>18</b> in parallel.

0025One embodiment of the strobe generator circuits <b>82</b>, <b>84</b>, as well as the read data latches <b>94</b> and the write data latches <b>92</b> is shown in <figref idref="DRAWINGS">FIG. 3</figref>. The CLK signal and its compliment CLK* are coupled to the strobe generator circuits <b>82</b>, <b>84</b> where they are applied to a receiver <b>100</b>. A similar receiver <b>102</b> receives a feedback clock signal CLK_FBand its compliment CLK_FB* in a manner that will be described below. The receivers <b>100</b>, <b>102</b> apply their clock signals to respective clock dividers <b>106</b>, <b>108</b>, which generate, respectively, at the output of a clock buffer <b>110</b> a single delay line reference clock signal DLL_REFhaving a frequency of one-half the frequency of the CLK signal and a single delay line feedback clock signal DLL_FBhaving a frequency of one-half the frequency of the CLK_FBsignal. The clock dividers <b>106</b>, <b>108</b> lower the frequency of the signals in the downstream components of the strobe generator circuits <b>82</b>, <b>84</b> thereby extending the operating range, especially for high-speed operation. The DLL_REFand DLL_FBsignals are applied to a delay-lock loop <b>114</b>. As explained in greater detail below, the DLL_FBsignal is derived from a signal generated at the output of the delay-lock loop <b>114</b>. The delay-lock loop <b>114</b> delays the DLL_REFto produce the output signal by a delay that causes the DLL_REFand DLL_FBsignals to have substantially the same phase.

0026The delay-lock loop <b>114</b> includes a phase detector <b>116</b> that compares the phase of the DLL_REFsignal to the phase of the DLL_FBsignal and generates an output signal corresponding to the phase difference. The DLL_REFsignal is also coupled through a buffer <b>118</b> to two fine delay paths <b>120</b>, <b>122</b> each of which delays the DLL_REFsignal by a different magnitude of delay. The outputs of the fine delay paths <b>120</b>, <b>122</b> are coupled to the inputs of a multiplexer <b>124</b>, which is controlled by a fine delay control circuit <b>126</b> based on a control signal from the phase detector <b>116</b>. The fine delay control circuit <b>126</b> causes an output from one of the delay paths <b>120</b>, <b>122</b> to be coupled through an inverter <b>128</b> to a coarse delay line <b>130</b>, which, in the embodiment shown in <figref idref="DRAWINGS">FIG. 3</figref>, has <b>20</b> delay stages. A coarse select signal CS from the phase detector <b>116</b> selects the number of delay stages though which the signal at the output of the inverter <b>128</b> will pass before being output from the coarse delay line <b>130</b> as a DLL_OUTsignal. As mentioned above, the DLL_FBsignal is derived from the DLL_OUTsignal, and the phase of the DLL_FBsignal changes in the same manner as the phase of the DLL_OUTsignal.

0027In operation, any difference in the phases of the DLL_REFand DLL_FBsignals causes the phase detector <b>116</b> to output a CS signal that alters the number of stages of the coarse delay line <b>130</b> through which the signal at the output of the inverter <b>128</b> passes. More specifically, if the phase of the DLL_FBsignal lags the phase of the DLL_REFsignal, the number of stages of the coarse delay line <b>130</b> will be reduced, thereby increasing the phase of the DLL_FBsignal. Conversely, if the phase of the DLL_FBsignal leads the phase of the DLL_REFsignal, the number of stages of the coarse delay line <b>130</b> will be increased, thereby decreasing the phase of the DLL_FBsignal. To further reduce the phase difference between the DLL_REFand DLL_FBsignals, the fine delay control circuit <b>126</b> selects the fine delay path <b>120</b>, <b>122</b> that results in the minimum phase difference. It should be understood that other conventional or hereinafter developed delays lines, or other closed loop circuits like phase-lock loops, may be used in place of the delay-lock loop <b>114</b> shown in <figref idref="DRAWINGS">FIG. 3</figref>.

0028The DLL_OUTsignal is coupled from the coarse delay line <b>130</b> to a single to double clock circuit <b>134</b>, which generates a clock circuit CK and its compliment CK* from the CLL_OUTsignal. These CK and CK* signals are coupled to a phase generator circuit <b>140</b>, which generates multiple clock signals having respective phases of the CK signal.

0029The phase generator circuit <b>140</b> includes 9 delay circuits <b>142</b>₀-<b>142</b>₈coupled in series with each other. The delay circuits <b>142</b>₀-<b>142</b>₈generate respective output signals STROBE<0>-STROBE<8> that are each delayed from a signal applied to its input by a magnitude determined by a delay control signal DEL_CON. The STROBE<0> signal is also generated by a delay circuit <b>144</b>. The STROBE<0> signal from the delay circuit <b>144</b> is applied to one input of a phase detector and control circuit <b>150</b>, which also receives the STROBE<8> signal from the delay circuit <b>142</b>₈. The phase detector and control circuit <b>150</b> compares the phase of the STROBE<0> signal to the phase of the STROBE<8> signal and adjusts the magnitude of the DEL_CONsignal so that the phases of the STROBE<0> and STROBE<8> signals are equal to each other. As a result, the phases of the STROBE<1>-STROBE<7> signals are equally spaced from each other. More specifically, the phases of the STROBE<0>-STROBE<7> signals are as shown in Table 1 below:

0030<tables id="TABLE-US-00001" num="00001"><table frame="none" colsep="0" rowsep="0"><tgroup align="left" colsep="0" rowsep="0" cols="3"><colspec colname="offset" colwidth="49pt" align="left" /><colspec colname="1" colwidth="49pt" align="left" /><colspec colname="2" colwidth="119pt" align="center" /><thead><row><entry /><entry namest="offset" nameend="2" rowsep="1">TABLE 1</entry></row><row><entry /><entry namest="offset" nameend="2" align="center" rowsep="1" /></row><row><entry /><entry /><entry>Phase</entry></row><row><entry /><entry>Signal</entry><entry>(Degrees)</entry></row><row><entry /><entry namest="offset" nameend="2" align="center" rowsep="1" /></row></thead><tbody valign="top"><row><entry /></row></tbody></tgroup><tgroup align="left" colsep="0" rowsep="0" cols="3"><colspec colname="offset" colwidth="49pt" align="left" /><colspec colname="1" colwidth="49pt" align="left" /><colspec colname="2" colwidth="119pt" align="char" char="." /><tbody valign="top"><row><entry /><entry>STROBE<0></entry><entry>0</entry></row><row><entry /><entry>STROBE<1></entry><entry>45</entry></row><row><entry /><entry>STROBE<2></entry><entry>90</entry></row><row><entry /><entry>STROBE<3></entry><entry>135</entry></row><row><entry /><entry>STROBE<4></entry><entry>180</entry></row><row><entry /><entry>STROBE<5></entry><entry>225</entry></row><row><entry /><entry>STROBE<6></entry><entry>270</entry></row><row><entry /><entry>STROBE<7></entry><entry>315</entry></row><row><entry /><entry namest="offset" nameend="2" align="center" rowsep="1" /></row></tbody></tgroup></table></tables>

0031However, it should be understood that the 45 degree phase of the STROBE<1> signal is 45 degrees of the clock signals at the output of the clock dividers <b>106</b>, <b>108</b>, which is 90 degrees of the clock signals at the output of the receivers <b>100</b>, <b>102</b>. A similar relationship exists with respect to all of the other signals STROBE<2>-STROBE<7>. The STROBE<0>-STROBE<7> signals are coupled through a clock distribution network known as a clock tree. The in-phase STROBE signals, i.e., STROBE<0>, STROBE<2>, STROBE<4>, STROBE<6> are coupled to clock inputs of data latches <b>164</b> each of which receive 4 bits of data in parallel. The quadrature STROBE signals, i.e., STROBE<1>, STROBE<3>, STROBE<5>, STROBE<7> are transmitted along with the data bits from the data latches <b>164</b>. The data latches <b>164</b> used in the memory controller <b>86</b> (<figref idref="DRAWINGS">FIG. 2</figref>) receive four parallel bits of write data and sequentially transmit the four write data bits responsive to the rising edges of the respective in-phase STROBE signals. These write data bits are transmitted to the memory device <b>88</b> along with the quadrature STROBE signals generated in the memory controller <b>86</b>. Similarly, the data latches <b>164</b> used in the memory device <b>88</b> receive four parallel bits of read data and sequentially transmit the four read data bits responsive to the rising edges of the respective in-phase STROBE signals. These read data bits are transmitted to the memory controller <b>86</b> along with the quadrature STROBE signals generated in the memory device <b>88</b>. Using half-frequency four strobe phases to clock the data latches <b>164</b> and data latches in the memory device <b>88</b> help maintain duty-cycle information and reduce intersymbol interference (“ISI”) for the output latches <b>164</b> and the output latches in the memory device <b>88</b>.

0032One or more of the STROBE<0>-STROBE<7> signals are coupled to a serializer circuit <b>190</b> that converts the received STROBE<0>-STROBE<7> signals to a feedback signal having twice the frequency of the STROBE signals. The serializer circuit <b>190</b> also preferably delays the feedback signal by a delay commensurate with the propagation delay from the data latches <b>164</b> to data bus terminals of the memory controller <b>86</b> and memory device <b>88</b>.

0033The use of the delay-lock loop <b>114</b> and the phase generator circuit <b>140</b> in the strobe generator circuits <b>82</b>, <b>84</b> has the advantage of generating strobe signals at several phases of the DLL_REFclock signal while allowing the delay-lock loop <b>114</b> to operate at the relatively low frequency of the DLL_REFclock signal. In contrast, if a phase-lock loop was used to generate strobe signals at several phases of the DLL_REFclock signal it would be necessary for the phase-lock loop to generate a clock signal having a substantially higher frequency. For Example, for strobe signals to be generated that transition at the 45, 90, 135, 180, 225, 270 and 315 degree phases of a 500 MHz clock signal, it would be necessary for a phase lock loop to generate a clock signal having a frequency of at least 2 GHz. It can be difficult to design phase-lock loops operating at very high frequencies, and, in any case, a phase lock-loop operating at a high frequency uses substantially more power compared to a phase-lock loop or delay-lock loop operating at a substantially lower frequency.

0034The memory systems <b>10</b>, <b>80</b> shown in <figref idref="DRAWINGS">FIGS. 1 and 2</figref>, respectively, or some other embodiment of a memory system according to the present invention can advantageously be used in processor-based systems, such as a computer system <b>200</b> shown in <figref idref="DRAWINGS">FIG. 4</figref>. The computer system <b>200</b> includes a processor <b>202</b> for performing various computing functions, such as executing specific software to perform specific calculations or tasks. The processor <b>202</b> includes a processor bus <b>204</b> that normally includes an address bus, a control bus, and a data bus. In addition, the computer system <b>200</b> includes one or more input devices <b>214</b>, such as a keyboard or a mouse, coupled to the processor <b>202</b> to allow an operator to interface with the computer system <b>200</b>. Typically, the computer system <b>200</b> also includes one or more output devices <b>216</b> coupled to the processor <b>202</b>, such output devices typically being a printer or a video terminal. One or more data storage devices <b>218</b> are also typically coupled to the processor <b>202</b> to store data or retrieve data from external storage media (not shown). Examples of typical storage devices <b>218</b> include hard and floppy disks, tape cassettes, and compact disk read-only memories (CD-ROMs). The processor <b>202</b> is also typically coupled to a cache memory <b>226</b>, which is usually static random access memory (“SRAM”) and to the memory device <b>16</b> (<figref idref="DRAWINGS">FIG. 1</figref>), <b>88</b> (<figref idref="DRAWINGS">FIG. 2</figref>) through the memory controller <b>14</b> (<figref idref="DRAWINGS">FIG. 1</figref>), <b>86</b> (<figref idref="DRAWINGS">FIG. 2</figref>). The computer system <b>200</b> includes an address bus <b>230</b> to couple row addresses and column addresses from the memory controller <b>14</b>, <b>86</b> to the memory device <b>16</b>, <b>88</b>. The computer system <b>200</b> also includes a command bus that couples command signals from the memory controller <b>14</b>, <b>86</b> to the memory device <b>16</b>, <b>88</b>. Finally, the computer system <b>200</b> includes a data bus <b>234</b> that couples write data signals from the memory controller <b>14</b>, <b>86</b> to the memory device <b>16</b>, <b>88</b> and read data signals from the memory device <b>16</b>, <b>88</b> to the memory controller <b>14</b>, <b>86</b>. As explained above, one or more of the signals coupled between the memory controller <b>14</b>, <b>86</b> and the memory device <b>16</b>, <b>88</b> are coupled using in-phase and quadrature strobe signals, which are also coupled between the memory controller <b>14</b>, <b>86</b> and the memory device <b>16</b>, <b>88</b> as explained above.

0035Although the present invention has been described with reference to the disclosed embodiments, persons skilled in the art will recognize that changes may be made in form and detail without departing from the spirit and scope of the invention.