US7213984B2

Optical density-changing element, optical element and photographic unit

Summary by NHIP

Electrochromic optical element

The optical density-changing element comprises an anode and cathode containing semiconductor materials paired with electron-donating or accepting materials. These materials undergo visible absorption spectrum changes between 400 and 700 nm while satisfying specific potential relations, such as −1.3 ≦Fba−Eo(a)≦0.3 for the anode.

Claim Score by NHIP

Read claim 16, the broadest

Abstract

To provide an optical density-changing element which has excellent properties that it can be brought into a colored state by applying only a low voltage, that it shows a rapid response speed and becomes completely colorless when restored to a bleached state from the colored state, and which can undergo a change in optical density in response to an applied voltage, the optical density-changing element includes, on each of an anode and a cathode, a material capable of at least one of donating and accepting an electron and, as a result of at least one of donating and accepting the electron, undergoing a change in absorption spectrum in a visible region and a material undergoing substantially no change in absorption spectrum in the visible region, with potentials of these materials satisfying a specific relation defined in the specification.

US7213984B2, drawing sheet 1
Sheet 1 of 37

Term

Term ended

Expired 4 January 2025, 1.7 years ago.

  1. Priority
  2. Filed
  3. Granted
  4. Expired
  5. Today

20 claims: 3 independent, 17 dependent

  1. 1
    An optical density-changing element comprising:an anode containing a first semiconductor material, the anode further comprising at least one of: a material (a) capable of at least one of donating and accepting an electron, the material (a) undergoing a change in absorption spectrum in the wavelength range of 400 to 700 nm upon at least one of donating and accepting the electron, wherein the anode satisfies the relation of −1.3 ≦Fba−Eo ( a )≦0.3 wherein Fba represents a flat band potential of the first semiconductor material and Eo(a) represents an oxidation potential of the material (a);and a material (b) capable of at least one of donating and accepting an electron, the material (b) undergoing substantially no change in absorption spectrum in the wavelength range of 400 to 700 nm upon at least one of donating and accepting the electron, wherein the anode satisfies the relation of −1.3 ≦Fba−Eo ( b )≦0.3 wherein Fba represents the flat band potential of the first semiconductor material and Eo(b) represents an oxidation potential of the material (b);and a cathode containing a second semiconductor material, the cathode further comprising at least one of: a material (c) capable of at least one of donating and accepting an electron, the material (c) undergoing the change in absorption spectrum in the wavelength range of 400 to 700 nm upon at least one of donating and accepting the electron, wherein the cathode satisfies the relation of −0.3 ≦Fbc−Er ( c )≦1.3 wherein Fbc represents a flat band potential of the second semiconductor material and Er(c) represents a reduction potential of the material (c);and a material (d) capable of at least one of donating and accepting an electron, the material (d) undergoing substantially no change in absorption spectrum in the wavelength range of 400 to 700 nm upon at least one of donating and accepting the electron, wherein the cathode satisfies the relation of −0.3 ≦Fbc−Er ( d )≦1.3 wherein Fbc represents the flat band potential of the second semiconductor material and Er(d) represents a reduction potential of the material (d), wherein the optical density-changing material has at least one of (i) the material (a) in the anode, and (ii) the material (c) in the cathode;and the optical density-changing element undergoes the change in optical density in response to a voltage applied between the anode and the cathode.
  2. 13
    An optical element comprising:an optical density-changing element comprises: an anode containing a first semiconductor material;and a cathode containing a second semiconductor material, the optical density-changing element undergoing a change in optical density in response to an electromotive force between the anode and the cathode;and an electromotive force-generating element capable of generating the electromotive force between the anode and the cathode of the optical density-changing element in response to an electromagnetic wave, wherein the anode further comprising at least one of: a material (a) capable of at least one of donating and accepting an electron, the material (a) undergoing the change in absorption spectrum in the wavelength range of 400 to 700 nm upon at least one of donating and accepting the electron, wherein the anode satisfies the relation of −1.3 ≦Fba−Eo ( a )≦0.3 wherein Fba represents a flat band potential of the first semiconductor material and Eo(a) represents an oxidation potential of the material (a);and a material (b) capable of at least one of donating and accepting an electron, the material (b) undergoing substantially no change in absorption spectrum in the wavelength range of 400 to 700 nm upon at least one of donating and accepting the electron, wherein the anode satisfies the relation of −1.3 ≦Fba−Eo ( b )≦0.3 wherein Fba represents the flat band potential of the first semiconductor material and Eo(b) represents an oxidation potential of the material (b);and the cathode further comprises at least one of: a material (c) capable of at least one of donating and accepting an electron, the material (c) undergoing the change in absorption spectrum in the wavelength range of 400 to 700 nm upon at least one of donating and accepting the electron, wherein the cathode satisfies the relation of −0.3 ≦Fbc−Er ( c )≦1.3 wherein Fbc represents a flat band potential of the second semiconductor material and Er(c) represents a reduction potential of the material (c);and a material (d) capable of at least one of donating and accepting an electron, the material (d) undergoing substantially no change in absorption spectrum in the wavelength range of 400 to 700 nm upon at least one of donating and accepting the electron, wherein the cathode satisfies the relation of −0.3 ≦Fbc−Er ( d )≦1.3 wherein Fbc represents the flat band potential of the second semiconductor material and Er(d) represents a reduction potential of the material (d), and wherein the optical density-changing material has at least one of (i) the material (a) in the anode, and (ii) the material (c) in the cathode.
  3. 16
    Broadest claimClaim Score 53, average(NHIP)An optical element comprising:an electromotive force-generating element capable of generating an electromotive force in response to an electromagnetic wave;and an optical density-changing element capable of undergoing a change in optical density in response to the electromotive force, wherein the optical density-changing element comprises a semiconductor layer comprising: a semiconductor material;and a material capable of undergoing the change in optical density, the material being adsorbed on the semiconductor material, and the semiconductor layer has a surface roughness coefficient of more than 20;wherein the optical density-changing element contains at least two materials capable of absorbing a plurality of visible lights different from each other;and wherein an optical density of the optical density-change element, upon irradiation with the electromagnetic wave, becomes 0.5 or more on average over a wavelength range of 400 to 700 nm.