Photoelectric conversion apparatus and image pick-up system using the photoelectric conversion apparatus

BACKGROUND OF THE INVENTION

00011. Field of the Invention

0002The present invention relates to a photoelectric conversion apparatus and an amplification solid state image pick-up apparatus and system using the same. In particular, the invention relates to a photoelectric conversion apparatus, and an image pick-up apparatus and system such as a digital camera, a video camera, a copying machine, or a facsimile machine.

00032. Related Background Art

0004An image sensor has been installed in many kinds of apparatuses such as a digital camera, a video camera, a copying machine, and a facsimile machine, where solid state image pick-up devices including photoelectric conversion devices are arranged in a one- or two-dimensional array. Examples of such solid state image pick-up devices include a CCD image pick-up device and an amplification solid state image pick-up device.

0005There is a growing tendency to increase the number of pixels in those image pick-up devices. As the area per pixel is reduced, the area allotted to the photodiode accordingly tends to be smaller. Thus, there arise a need to process a smaller quantity of signal charge and a need to lessen a leak current that may result in a noise component.

0006<figref idref="DRAWINGS">FIG. 4</figref> shows a circuit configuration example of an amplification solid state image pick-up device. The amplification solid state image pick-up device includes at least in a unit pixel: a photodiode; and an amplifying transistor that amplifies light signals accumulated in the photodiode. The unit pixels are arranged in a two-dimensional array.

0007<figref idref="DRAWINGS">FIG. 5</figref> is a plan view showing a pixel structure in a unit cell in a conventional amplification MOS sensor. In <figref idref="DRAWINGS">FIG. 5</figref>, reference numeral <b>2101</b> denotes a photodiode for photoelectric conversion; <b>2102</b>, a reset transistor for resetting the photodiode <b>2101</b> and a floating diffusion (FD) region <b>2106</b>; <b>2103</b>, a transfer MOS transistor for transferring (reading out) signal charges in the photodiode <b>2101</b>; <b>2104</b>, a source follower amplifier for converting the transferred (read-out) charges into a voltage, with its gate electrode connected to the FD region <b>2106</b>; and <b>2105</b>, a row selection MOS transistor that connects an output of the source follower amplifier to a signal line.

0008In this layout, the FD region <b>2106</b> is constituted of an L-shaped diffusion layer in order to minimize its capacitance value C_FD, in order to improve a charge-voltage conversion efficiency. Such a structure is disclosed in JP 2002-190586 A. Also, a depletion layer region <b>2208</b> is formed between the FD region <b>2106</b> constituted of an n⁺ layer and a p-type substrate. <figref idref="DRAWINGS">FIG. 6</figref> is a plan view of a unit cell of a solid state image pick-up device disclosed in JP H10-150182 A. In the structure shown in <figref idref="DRAWINGS">FIG. 6</figref>, unlike <figref idref="DRAWINGS">FIG. 5</figref>, gate wirings <b>23</b> and <b>24</b> of a readout transistor are not discrete for each pixel and are not arranged close to a drain <b>25</b> of the readout transistor.

0009The transfer MOS transistor <b>2103</b> of the transistors in <figref idref="DRAWINGS">FIG. 5</figref> is an NMOS transistor, and has a gate electrode formed of a material including N-type polycrystalline silicon.

0010<figref idref="DRAWINGS">FIG. 7</figref> is a sectional view taken along the line <b>7</b>—<b>7</b> of <figref idref="DRAWINGS">FIG. 5</figref>. In <figref idref="DRAWINGS">FIG. 7</figref>, reference numeral <b>2201</b> denotes an N-type silicon substrate; <b>2202</b>, a P-type well; <b>2203</b>, a P⁺ type channel stop layer that is formed below a local-oxidation-of-silicon (LOCOS) oxide film <b>2204</b> in a self-aligned manner; <b>2205</b>, an N⁺ type diffusion layer that constitutes part of the FD region <b>2106</b>; <b>2206</b>, a gate electrode that is formed of high-concentration N-type polysilicon or silicide thereof; and <b>2207</b>, a gate insulating film of the transfer MOS transistor <b>2103</b>.

0011Next, circuit operation is explained with reference to a circuit diagram of <figref idref="DRAWINGS">FIG. 8</figref> and a timing chart of <figref idref="DRAWINGS">FIG. 9</figref>.

0012In operation, the circuit is shifted from a state where the reset MOS transistor <b>2102</b> is turned ON to a state where the transfer MOS transistor <b>2103</b> is turned ON for resetting the photodiode <b>2101</b> of <figref idref="DRAWINGS">FIG. 8</figref>. After that, the transfer MOS transistor <b>2103</b> is turned OFF to reset the photodiode <b>2101</b>. The photodiode in the reset state is then put into a charge accumulating state. After the lapse of a certain accumulation period, the reset MOS transistor <b>2102</b> is turned OFF and the row selection MOS transistor <b>2105</b> is turned ON. Thus, the source follower amplifier <b>2104</b> is activated. In this state, the voltage value of a vertical output line <b>2108</b> at the time of resetting the FD region <b>2106</b> is input (written) to a noise readout storage capacitor (Ctn) <b>2107</b> by turning ON a transfer transistor <b>2109</b>. Then, the transfer transistor <b>2109</b> is turned OFF. Note that the time chart of FD in <figref idref="DRAWINGS">FIG. 9</figref> schematically shows a voltage value change of the floating diffusion (FD) region <b>2106</b>.

0013Next, the transfer MOS transistor <b>2103</b> is turned ON again, thereby to transfer signal charges in the photo diode <b>2101</b> to the FD region <b>2106</b>. With this transfer, a potential change corresponding to the transferred signal charges appears in the time chart of FD In this state, a voltage value of the vertical output line <b>2108</b> at the time of transferring the signal charges to the FD region <b>2106</b> is input (written) to a signal readout storage capacitor (Cts) <b>2110</b> by turning ON a transfer transistor <b>2111</b>. Then, the transfer transistor <b>2111</b> is turned OFF.

0014After that, a differential amplifier, etc., (not shown) are used for generating a voltage corresponding to a difference between the output charge of the storage capacitor Cts and that of the storage capacitor Ctn. This makes it possible to eliminate noise generated at the reset time of the reset MOS transistor <b>2102</b> of the pixel or variation in threshold voltage of the source follower amplifier <b>2104</b>.

0015Here, in a layout portion as shown in a region of <figref idref="DRAWINGS">FIG. 7</figref> where the N⁺ type FD region <b>2205</b> and the P⁺ type channel stop layer <b>2203</b> are formed close to each other and, in addition, the N⁺ type poly-Si electrode overlies the P⁺ type channel stop layer <b>2203</b>, a leak current is more likely to flow between the FD region and the substrate. If the leak current is generated in this portion, as indicated by the dotted line in the time chart of FD of <figref idref="DRAWINGS">FIG. 9</figref>, the voltage of the FD region changes. As a result, the voltage values input (written) to the storage capacitors Ctn and Cts are different from the original (correct) ones, leading to a deterioration in image quality.

0016Regarding JP H10-150182 A, this publication has no description about an influence that may be exerted on how the depletion layer spreads by a concentration of a semiconductor layer close to the drain <b>25</b> or a concentration of a semiconductor region just below the gate wirings <b>23</b>, <b>24</b> but excluding a channel formation region, or a work function of a material for each gate wiring. In a structure like that of <figref idref="DRAWINGS">FIG. 6</figref>, when a difference in work function between the gate electrode and the semiconductor region just below the gate wirings <b>23</b>, <b>24</b> but excluding the channel formation region, takes a positive value or zero, as explained below, even if the channel stop is disposed close to the FD region, a leak current will not increase. Accordingly, the use of a structure of the present invention provides not noticeable but substantial advantage at least rather than the prior art.

SUMMARY OF THE INVENTION

0017It is therefore an object of the present invention to provide a photoelectric conversion apparatus with less leak current in a floating diffusion region.

0018In order to attain the above-mentioned object, a photoelectric conversion apparatus according to a first aspect of the present invention has a photodiode for converting light into a signal charge, a first semiconductor region having a first conductivity type, and a floating diffusion region formed from a second semiconductor region having a second conductivity type for converting the signal charge generated by the photodiode into a signal voltage, the second semiconductor region being formed in the first semiconductor region. The apparatus also comprises a depletion region formed in a border area between the first semiconductor region and the floating diffusion region, and an electrode is formed above the first semiconductor region and spaced from the first semiconductor region by an interposed insulating film, to increase the concentration of majority carriers in the first semiconductor region. Also provided are an isolation region disposed in the periphery of the photodiode, the electrode extending to overlap with the isolation region, and a third semiconductor region of the first conductivity type disposed beneath the isolation region. According to this aspect of the invention, the impurity concentration of the third semiconductor region is higher than that of the semiconductor region, and in addition, the electrode on the isolation region extends above at least part of the third semiconductor region, but does not extend above the depletion region.

0019A photoelectric conversion apparatus according to another aspect of the present invention comprises a plurality of pixels, each pixel of which comprises a first semiconductor region of a first conductivity type, a photodiode provided with a second semiconductor region of a second conductivity type disposed in the first semiconductor region for converting light into electron charge, and a transfer transistor for transfer the electron charge from the photodiode. Also provided are a third semiconductor region of the second conductivity type to which the electron charge from the photodiode is transferred through the transfer transistor, and an isolation region disposed in the periphery of the photodiode. According to this aspect of the invention, the transfer transistor has a gate electrode that extends so as to overlap with the isolation region. Also present is a fourth semiconductor region of the first conductivity type disposed beneath the isolation region, the impurity concentration of the fourth semiconductor region being higher than that of the first semiconductor region. The gate electrode of the transfer transistor (which is discrete for every pixel) extends above at least part of the fourth semiconductor region with the isolation region interposed therebetween, and the third semiconductor region is formed adjacent to the gate electrode of the transfer transistor, but does not extend to be adjacent to a laminated portion of the fourth semiconductor region, the isolation region and the gate electrode.

0020According to another aspect of the invention, there is provided a photoelectric conversion apparatus comprising a plurality of pixels, where each pixel comprises a first semiconductor region of a first conductivity type, a photodiode provided with a second semiconductor region of a second conductivity type disposed in the first semiconductor region for converting light into electron charge, and a transfer transistor for transfer the electron charge from the photodiode. A third semiconductor region of the second conductivity type receives the electron charge from the photodiode when the charge is transferred through the transfer transistor. In addition, an isolation region is disposed in the periphery of the photodiode, a gate electrode of the transfer transistor extending to overlap with the isolation region. Also, a fourth semiconductor region of the first conductivity type is disposed beneath the isolation region, and has an impurity concentration higher than that of the first semiconductor region. The gate electrode of the transfer transistor (which again is discrete for each pixel) extends above at least part of the fourth semiconductor region with the isolation region interposed therebetween, the pixel includes two laminated portions of the fourth semiconductor region, the isolation region and the gate electrode, and the width of the third semiconductor region in a side adjacent to the gate electrode is equal to or shorter than the distance between the two laminated portions.

0021The present invention can provide a photoelectric conversion apparatus capable of reducing a leak current in a floating diffusion region with a high S/N ratio, and a solid state image pick-up apparatus using the same.

BRIEF DESCRIPTION OF THE DRAWINGS

0022<figref idref="DRAWINGS">FIG. 1</figref> is a plan view showing a photoelectric conversion apparatus according to an embodiment of the present invention;

0023<figref idref="DRAWINGS">FIG. 2</figref> is a sectional view taken along the line A-B-C-D of <figref idref="DRAWINGS">FIG. 1</figref>, which shows the photoelectric conversion apparatus according to the embodiment of the present invention;

0024<figref idref="DRAWINGS">FIG. 3</figref> is a block diagram showing a structure of an image pick-up apparatus according to an embodiment of the present invention;

0025<figref idref="DRAWINGS">FIG. 4</figref> is a plan view showing a circuit configuration example of an amplification solid state image pick-up device;

0026<figref idref="DRAWINGS">FIG. 5</figref> is a plan view showing a conventional photoelectric conversion apparatus;

0027<figref idref="DRAWINGS">FIG. 6</figref> is a plan view showing another conventional photoelectric conversion apparatus;

0028<figref idref="DRAWINGS">FIG. 7</figref> is a sectional view taken along the line <b>7</b>—<b>7</b> of <figref idref="DRAWINGS">FIG. 5</figref>, which shows the conventional photoelectric conversion apparatus;

0029<figref idref="DRAWINGS">FIG. 8</figref> is a circuit diagram showing an equivalent circuit of a photoelectric conversion apparatus; and

0030<figref idref="DRAWINGS">FIG. 9</figref> is a timing chart showing operations of a photoelectric conversion apparatus.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

0031Hereinafter, best modes for carrying out the present invention will be described in detail with reference to the accompanying drawings.

Embodiment 1

0032<figref idref="DRAWINGS">FIG. 1</figref> is a plan view showing a photoelectric conversion apparatus according to Embodiment 1 of the present invention. In <figref idref="DRAWINGS">FIG. 1</figref>, reference numeral <b>101</b> denotes a photo diode for photoelectrical conversion; <b>102</b>, a reset transistor for resetting the photodiode <b>101</b> and a floating diffusion (FD) region <b>106</b>; <b>103</b>, a transfer MOS transistor for transferring (reading out) signal charges in the photodiode <b>101</b>; <b>104</b>, a source follower amplifier for converting the transferred (read-out) charges into a voltage, which has a gate electrode connected to the FD region <b>106</b>; and <b>105</b>, a row selection MOS transistor that connects an output of the source follower amplifier to a signal line.

0033<figref idref="DRAWINGS">FIG. 2</figref> is a sectional view taken along the line A-B-C-D of <figref idref="DRAWINGS">FIG. 1</figref>. In <figref idref="DRAWINGS">FIG. 2</figref>, reference numeral <b>201</b> denotes an N-type silicon substrate; <b>202</b>, a P-type well; <b>203</b>, a P⁺ type channel stop layer formed below a local-oxidation-of-silicon (LOCOS) oxide film <b>204</b> in a self-aligned manner; <b>205</b>, an N⁺ type diffusion layer that forms part of the FD region <b>106</b>; and <b>206</b>, a gate electrode. The gate electrode <b>206</b> is formed of high-concentration N-type polysilicon or silicide thereof. The use of such a material produces the effect that a gate portion of the transfer MOS transistor <b>103</b> increases a threshold voltage of the transistor with respect to the P-type well <b>202</b> according to a work function difference. Accordingly, the concentration in portions below the transfer gate is effectively increased, thereby achieving the effect of suppressing a dark current flowing in the photodiode from the portion below the gate electrode during the charge accumulation.

0034Reference numeral <b>207</b> denotes a gate insulating film of the transfer MOS transistor <b>103</b>.

0035Reference numeral <b>208</b> denotes a depletion layer constituted of the N⁺ type diffusion layer <b>205</b> forming the FD region, the P-type well <b>202</b>, and the P⁺ type channel stop layer.

0036Conventional ones involve a layout portion as shown in a region of <figref idref="DRAWINGS">FIG. 7</figref> where an N⁺ type FD region <b>2205</b> and a P⁺ type channel stop layer <b>2203</b> are formed close to each other and in addition, an N⁺ type poly-Si electrode is formed above the P⁺ type channel stop layer <b>2203</b>. In contrast, the present invention involves such a layout portion only at a point E of <figref idref="DRAWINGS">FIG. 1</figref>, which significantly reduces the risk of generating a leak current between the FD region and the substrate.

0037In <figref idref="DRAWINGS">FIG. 7</figref>, the mechanism of generating a leak current in the region is as follows. First, in a portion where the FD region <b>2205</b>, a high-concentration N⁺ type layer, and the channel stop layer <b>2203</b>, a P⁺ type layer, are formed close to each other, as for a voltage in the FD region <b>2205</b>, during an operation of reading out signals, a PN junction is reverse-biased in terms of operation since a positive voltage is applied to the P-type well <b>2202</b>. Also, the region includes a gate electrode <b>2206</b> made of N⁺ type polysilicon and formed across a LOCOS oxide film from a P-type channel stop layer <b>2203</b>. The gate electrode <b>2206</b> and the P-type channel stop layer <b>2203</b> have a difference in work function therebetween. Therefore, even if the gate electrode <b>2206</b> and the P-type well <b>2202</b> have the same potential, the channel stop layer <b>2203</b> effectively increases a concentration of majority carriers by the work function difference, thereby changing its conductivity type to P⁺. As a result, the region in a depletion layer <b>2208</b> formed between the FD region <b>2205</b> and the P-type well <b>2202</b> has a depletion layer width smaller than that of the region not including the gate electrode <b>2206</b> (that is, d<b>1</b>&lt;d<b>2</b>). A high electric field is applied between the N⁺ type diffusion layer <b>2205</b> and the P⁺ type channel stop layer <b>2203</b>, and thus a leak current is easily generated.

0038That is, it can be concluded that when any material is laid out near a depletion layer, which effectively increases a concentration of majority carriers of a semiconductor region having an opposite conductivity type that forms a junction with the FD region to constitute the depletion layer, a leak current is apt to flow. For example, in the case of using, on the assumption that the FD region is formed of N-type silicon, N-type polysilicon or aluminum as a material having such a work function that causes majority carriers of a P-type region to effectively increase their concentration, and conversely in the case of using, on the assumption that the FD region is formed of P-type silicon, P-type polysilicon as a material having such a work function that causes majority carriers of an N-type region to effectively increase their concentration, a leak current is easily generated. Thus, in these cases, as shown in <figref idref="DRAWINGS">FIG. 1</figref>, it is more preferable to adopt a layout where the depletion layer of the FD region contacts the P⁺ type channel stop layer with the smallest area (at a point).

0039Also, this phenomenon essentially occurs when a concentration of the majority carriers in the semiconductor region having an opposite conductivity type that forms the junction with the FD region to constitute the depletion layer is effectively increased as mentioned above. Therefore, for example, when a gate electrode potential of the transfer MOS transistor <b>103</b> close to the FD region or a gate potential of the reset MOS transistor <b>102</b> is negative one, a leak current is easily generated irrespective of a gate electrode material. Also, regardless of the gate electrodes of the transfer MOS transistor <b>103</b> and reset MOS transistor <b>102</b> which define the FD region, in the case of forming (laying out) in the FD region above the depletion layer region, a material that effectively increases a concentration of majority carriers in the semiconductor region having an opposite conductivity type to that of the FD region or an electrode having a potential that effectively increases the concentration of the same, the depletion layer width is shortened, leading to generation of a high electric field and increase in leak current in the FD region. Therefore, although not shown, even if no channel stop layer is formed, it is necessary not to form the electrode directly above the depletion layer derived from the FD region in arranging the above electrode. More specifically, the electrode needs to be formed 0.1 to 0.5 mm, preferably 0.2 to 0.4 mm apart from the FD region.

0040Further, it is unclear from FIG. 6 in JP H10-150182 A how a voltage is applied to a drain <b>25</b> of a readout transistor corresponding to an FD region during its operation or how an electrode material and substrate material affect the depletion layer. That is, JP H10-150182 A does not necessarily show a case where a concentration of majority carrier in the channel stop is increased due to the work function difference so that an electric field in depletion layer (between the diffusion layer (FD region) and the channel stop) is strengthened and thus a leak current increases when a reverse bias is applied between the well region and diffusion region. In the case where the material or voltage condition has an effect of weakening an electric field of the depletion layer, the use of the structure shown in <figref idref="DRAWINGS">FIG. 2</figref>, according to the present invention, provides not noticeable but substantial advantage at least rather than the prior art.

Embodiment 2

0041<figref idref="DRAWINGS">FIG. 3</figref> shows a system configuration of an image pick-up apparatus using the photoelectric conversion apparatus of the above embodiment, as an image pick-up apparatus according to the present invention. In <figref idref="DRAWINGS">FIG. 3</figref>, an image pick-up apparatus includes: a barrier or shutter <b>1</b> serving as both a protector of a lens and a main switch thereof; a lens <b>2</b> for focusing an optical image of an object on a solid state image pick-up device <b>4</b>; a diaphragm <b>3</b> for adjusting how much of the light that has passed through the lens <b>2</b> is allowed to reach the solid state image pick-up device <b>4</b> (corresponding to the photoelectric conversion apparatus as described in the above embodiment) for taking in the formed object image through the lens <b>2</b> as an image signal; a circuit <b>5</b> processing image pick-up signal for effecting various types of correction or clamping on the image signal output from the solid state image pick-up device <b>4</b>; an A/D converter <b>6</b> for effecting analog-digital conversion on the image signal output from the solid state image pick-up device <b>4</b>; a signal processor <b>7</b> for effecting various types of correction or data compression on image data output from the A/D converter <b>6</b>; and a timing generator <b>8</b> for outputting various timing signals to the solid state image pick-up device <b>4</b>, the circuit <b>5</b> processing image pick-up signal, the A/D converter <b>6</b>, and the signal processor <b>7</b>. Note that the solid stage image pick-up device <b>4</b>, the circuit processing image pick-up device <b>5</b>, the A/D converter <b>6</b>, the signal processor <b>7</b>, and the timing generator <b>8</b> may all be mounted on the same chip. A solid state image pick-up system is configured by an arithmetic operation unit controlling unit <b>9</b> for performing various arithmetic operations and controlling the whole still video camera; a memory <b>10</b> for temporarily storing image data; an interface (I/F) controlling a recording medium <b>11</b> for recording or reading out data on/from a recording medium; a removably insertable recording medium <b>12</b> for recording or reading out image data, such as a semiconductor memory; and an external interface (I/F) <b>13</b> for communicating with an external computer, etc.

0042Next, explanation is given of an operation of the system shown in <figref idref="DRAWINGS">FIG. 3</figref>. Upon opening the shutter <b>1</b>, a main power source is turned ON, and then the control system is powered on, as is the image pick-up system circuit including the A/D converter <b>6</b>. Subsequently, the arithmetic operation unit controlling unit <b>9</b> opens the diaphragm <b>3</b> for controlling an exposure amount and signals output from the solid state image pick-up device <b>4</b> directly pass through the circuit <b>5</b> processing image pick-up signal to be output to the A/D converter <b>6</b>. The A/D converter <b>6</b> effects A/D conversion on the signals to be output to the signal processor <b>7</b>. The signal processor <b>7</b> calculates the exposure amount based on the input data with the arithmetic operation unit controlling unit <b>9</b>.

0043Lightness is judged based on results of the exposure metering and the arithmetic operation unit controlling unit <b>9</b> controls the diaphragm according to the judgment result. Next, a high-frequency component is extracted based on signals output from the solid state image pick-up device <b>4</b> and the arithmetic operation unit controlling unit <b>9</b> calculates a distance to an object. After that, the lens <b>2</b> is driven, and a judgment is made a to whether or not focusing is obtained. If it is judged that the system is not focused, the lens <b>2</b> is driven again to measure the distance to the object.

0044Then, after focusing is confirmed, the main exposure starts. After the completion of the exposure, the image signals output from the solid state image pick-up device <b>4</b> undergo correction, etc., with the circuit <b>5</b> processing image pick-up signal and A/D conversion with the A/D converter <b>6</b>, and then pass through the signal processor <b>7</b> to be stored in the memory <b>10</b> with the arithmetic operation unit controlling whole <b>9</b>. After that, data stored in the memory <b>10</b> is recorded on the removably insertable recording medium <b>12</b> such as a semiconductor memory, through the I/F controlling recording medium <b>11</b> under the control of the arithmetic operation unit controlling unit <b>9</b>. Also, the data may be directly input to a computer, etc., through the external I/F <b>13</b> for image processing.

0045The present invention can be used for taking an image.

0046This application claims priority from Japanese Patent Application No. 2003-380090, filed on Nov. 10, 2003, which is hereby incorporated by reference herein.