Pseudo CMOS dynamic logic with delayed clocks

CROSS REFERENCE TO RELATED APPLICATIONS

0001This application is a continuation under 37 C.F.R. 1.53(b) of U.S. application Ser. No. 10/228,703, filed Aug. 27, 2002, which is incorporated herein by reference.

0002This application is also related to the following co-pending, commonly assigned U.S. patent applications: “Clock-Delayed Pseudo-NMOS Domino Logic,” U.S. application Ser. No. 651,630 (U.S. Pat. No. 6,373,290); “Monotonic Dynamic-Static Pseudo-NMOS Logic Circuits,” U.S. application Ser. No. 09/805,909 (U.S. Pat. No. 6,563,345); and “CMOS Gate Array with Vertical Ultrathin Body Transistors Monotonic Dynamic-Static Pseudo-NMOS Logic Circuits,” U.S. Ser. No. 09/788,109; which applications are incorporated by reference.

FIELD OF THE INVENTION

0003The present invention relates generally to integrated circuits and CMOS gate arrays. In particular, the invention relates to pseudo-CMOS dynamic logic with delayed clocks.

BACKGROUND OF THE INVENTION

0004CMOS technology is used not only for digital integrated circuits due to a low power dissipation, a high density of integration and a low cost of fabrication but also for analog integrated circuits. The most important applications that are using microelectronic components, such as telecommunication equipment, industrial control equipment, auto electronics, require more and more specialized integrated circuits. The continuing development in the semiconductors has led to implementation and use of gate arrays and standard cells as the most modern and inexpensive way to produce ASIC's, Application Specific Integrated Circuits. Gate arrays technologies have a special place in the ASIC design. An ASIC is an integrated circuit that can place on a single chip an entire system or a great part of it, performing not only digital, but also analog functions. A CMOS gate array can be simply described as a matrix of pre-manufactured identical cells that only requires the addition of the final metal and contact masks to define a new circuit function. The gate array technology can quickly respond to the customer requirements in a low cost and efficient manner. Gate arrays can be implemented in a variety of circuit and process technologies including most commonly static CMOS and bipolar emitter coupled logic.

0005One of the problems in static CMOS logic is the series connections of devices required in logic gates. <figref idref="DRAWINGS">FIGS. 1A and 1B</figref> illustrate the standard CMOS static gates. In static CMOS logic circuits each input, shown as A and B respectively, must drive two gates—the gate of one NMOS transistor and the gate of a PMOS transistor. This results in a large area for static CMOS circuits and a large number of metal wiring levels must be utilized to allow interconnections. <figref idref="DRAWINGS">FIG. 1A</figref> illustrates a 2-input positive logic NOR gate. In <figref idref="DRAWINGS">FIG. 1A</figref>, input A drives gates <b>102</b> and <b>104</b>, and input B drives gates <b>106</b> and <b>108</b>. <figref idref="DRAWINGS">FIG. 1B</figref> illustrates a 2-input positive logic NAND gate. In <figref idref="DRAWINGS">FIG. 1B</figref>, input A drives gates <b>112</b> and <b>114</b>, and input B drives gates <b>116</b> and <b>118</b>.

0006Another problem with static CMOS logic circuits is that in the PMOS transistor the hole mobility is about three times lower than the mobility of electrons if the transistors have comparable sizes. Because of this, switching transients are very asymmetrical. The charge up transient of the capacitive load in a simple inverter takes far longer than the discharge transient. To attempt to compensate, the PMOS transistors are often fabricated with a large width or size to provide symmetrical switching. However, this increases the stray capacitive loads and results in an even larger area for the circuits, and very inefficient area utilization.

0007A number of other approaches to overcome these shortcomings have been developed and are discussed further in the detailed description portion of the present application. However, as detailed therein, each presents or introduces new shortcomings to the circuit design.

0008For CMOS NOR gates or inverters being clocked at high frequencies where the dynamic switching power is comparable to the DC power of NMOS circuits another type of circuit configuration now commonly referred to as pseudo-nMOS is often employed. (See generally, H. Sakamoto and L. Forbes, “Grounded load complementary FET circuits; SCEPTRE analysis,” IEEE J. Solid-State Circuits, Vol. SC-8, No.4, pp. 282–284, 1973; and J. M. Rabaey, “Digital integrated circuits, a design perspective,” Prentice Hall, Upper Saddle River, N.J., 1996, pp. 205–209). A pseudo-nMOS circuit configuration is shown in <figref idref="DRAWINGS">FIG. 2A</figref>. The pseudo-nMOS circuit configuration of <figref idref="DRAWINGS">FIG. 2A</figref> is often employed in CMOS inverters and NOR gates. (See generally, M. A. Krause et al., “Programmable logic array structures for CMOS VLSI 1983 International Electrical, Electronics Conference Proceedings, 26–28 Sep. 1983, Toronto, Ont., Canada, 26–28 Sep. 1983, vol. 2, pp. 304–7; and N. Subba et al., “pseudo-nMOS revisited: impact of SOI on low power, high speed circuit design,” IEEE Int. SOI Conference, Wakefield, Mass., October 2000, pp. 26–27). However, not all logic functions can be effectively realized with just inverters and NOR gates, it is often desirable to also have NAND gates.

0009The mirrored configuration of <figref idref="DRAWINGS">FIG. 2A</figref> is referred to as the pseudo-pMOS circuit and is shown in <figref idref="DRAWINGS">FIG. 2B</figref>. (See generally, R. Rajsuman et al., “CMOS stuck-open fault detection using single test patterns,” 26th ACM/IEEE Design Automation Conference.” 25–29 Jun. 1989, Las Vegas, Nev., pp. 714–17, 1989; and U.S. Pat. No. 5,315,301 “Binary data generating circuit and A/D converter having immunity to noise,” 24 May 1994). The pseudo-pMOS illustrated in <figref idref="DRAWINGS">FIG. 2B</figref> is a 2-input positive logic NAND gate and provides a positive logic NAND circuit function. Pseudo-CMOS static logic is then a combination of pseudo-nMOS (<figref idref="DRAWINGS">FIG. 2A</figref>) and pseudo-pMOS gates (<figref idref="DRAWINGS">FIG. 2B</figref>). However, pseudo-CMOS static logic is slow due to the slow pull up of the pMOS devices in NAND gates which must charge the output high if any of the NAND gate inputs, e.g. C or D, is low.

0010Therefore, there is a need in the art to provide CMOS gate arrays which result in faster switching speeds, use less power, use far fewer devices to conserve chip surface space, and which require much less wiring and circuit complexity that conventional logic array approaches.

SUMMARY OF THE INVENTION

0011The above mentioned problems with CMOS gate arrays and other problems are addressed by the present invention and will be understood by reading and studying the following specification. Systems and methods are provided for pseudo-CMOS dynamic logic with delayed clocks.

0012In one embodiment of the present invention, a pseudo-CMOS dynamic logic circuit with delayed clocks is provided. The pseudo-CMOS dynamic logic circuit includes a dynamic pseudo-nMOS logic gate and a dynamic pseudo-pMOS logic gate coupled thereto. In one embodiment, the dynamic pseudo-nMOS logic gate includes a NOR logic gate and the dynamic pseudo-pMOS logic gate includes a NAND logic gate. The dynamic pseudo-nMOS logic gate includes a delayed enable clock transistor coupled to a source region of at least two input transistors. The dynamic pseudo-pMOS logic gate includes a delayed enable clock transistor coupled to a drain of at least two input transistors. None of the logic input devices are connected in series and the pMOS devices are used only for precharge.

0013These and other embodiments, aspects, advantages, and features of the present invention will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art by reference to the following description of the invention and referenced drawings or by practice of the invention. The aspects, advantages, and features of the invention are realized and attained by means of the instrumentalities, procedures, and combinations particularly pointed out in the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

<figref idref="DRAWINGS">FIG. 1A</figref> illustrates a 2-input positive logic NOR gate.

<figref idref="DRAWINGS">FIG. 1B</figref> illustrates a 2-input positive logic NAND gate.

<figref idref="DRAWINGS">FIG. 2A</figref> illustrates a pseudo-nMOS circuit configuration.

<figref idref="DRAWINGS">FIG. 2B</figref> illustrates a pseudo-pMOS circuit which is the mirrored configuration of <figref idref="DRAWINGS">FIG. 2A</figref>.

<figref idref="DRAWINGS">FIG. 3A</figref> illustrates a dynamic pseudo-nMOS 2-input NOR gate according to an embodiment of the present invention.

<figref idref="DRAWINGS">FIG. 3B</figref> illustrates a dynamic pseudo-pMOS 2-input NAND gate according to an embodiment of the present invention.

<figref idref="DRAWINGS">FIG. 4A</figref> illustrates the switching of static CMOS gates, in this case a series of inverters.

<figref idref="DRAWINGS">FIG. 4B</figref> illustrates the switching of a series of inverters in an output prediction logic circuit (OPL).

<figref idref="DRAWINGS">FIG. 4C</figref> illustrates a series of pseudo-CMOS dynamic logic gates with the delayed enable clocks shown in <figref idref="DRAWINGS">FIG. 4D</figref> according to the teachings of the present invention.

<figref idref="DRAWINGS">FIG. 4D</figref> is a graph which plots applied potential vs. time and illustrates delayed clocks inputs (φp, φen, φen<b>2</b>, φen<b>3</b>, and φen<b>4</b>.

<figref idref="DRAWINGS">FIG. 5</figref> is a block diagram of an electrical system, or processor-based system, utilizing ternary metallic gates formed by atomic layer deposition, according to embodiments of the present invention.

DETAILED DESCRIPTION

0025In the following detailed description of the invention, reference is made to the accompanying drawings which form a part hereof, and in which is shown, by way of illustration, specific embodiments in which the invention may be practiced. The embodiments are intended to describe aspects of the invention in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and changes may be made without departing from the scope of the present invention. In the following description, the terms wafer and substrate are interchangeably used to refer generally to any structure on which integrated circuits are formed, and also to such structures during various stages of integrated circuit fabrication. Both terms include doped and undoped semiconductors, epitaxial layers of a semiconductor on a supporting semiconductor or insulating material, combinations of such layers, as well as other such structures that are known in the art. The following detailed description is not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims.

0026As will be described in more detail below, the present invention describes dynamic pseudo-CMOS with delayed clocks. Dynamic pseudo-CMOS with delayed clocks avoids the slower circuit response of static pseudo-CMOS by precharging all the outputs high.

0027A delayed enable clock is used to evaluate the logic inputs at each stage or level of the logic in succession. In this latter respect dynamic pseudo-CMOS with delayed clocks is similar to output prediction logic. (See generally, McMurchie, L.; Kio, S.; Yee, G.; Thorp, T.; Sechen, C., “Output prediction logic: a high-performance CMOS design technique,” Proc. International Conference on Computer Design, pp. 247–254, 2000). Output prediction logic, OPL, is one of the fastest possible CMOS logic families with switching speeds exceeding static CMOS and domino logic. (See generally, Sheng Sun; McMurchie, L.; Sechen, C. ,“A high-performance 64-bit adder implemented in output prediction logic,” Proc. Advanced Research in VLSI, pp. 213–222, 2001).

0028Additionally, not only will dynamic pseudo-CMOS with delayed clocks be a high speed logic family but will be even faster than OPL since no series connected devices are used in NAND gates. Dynamic pseudo-CMOS with delayed clocks performs all logic functions with only parallel connected devices and only NMOS transistors are used during the switching transients, both of these contribute to the fastest possible switching speed as well as the dynamic nature of the circuit.

0029<figref idref="DRAWINGS">FIG. 2A</figref> illustrates a pseudo-nMOS circuit <b>200</b> configuration (viz.CMOS with the gate <b>206</b> of the pMOS pull up device <b>208</b> grounded) of a 2-input positive logic NOR gate. If the circuit is designed correctly, or the correct device W/L ratios used, and the circuit ratioed correctly then if one of the nMOS devices, <b>202</b> and <b>204</b>, is on the output (Vo) will be low. This circuit works like a ratioed NMOS static logic circuit. During the switching transient and during the pull up of the output the pMOS device <b>208</b> acts like a constant current source charging the load capacitance <b>210</b> over a large portion of the switching transient. In this respect the circuit <b>200</b> acts like nMOS enhancement and depletion logic circuits. A depletion mode nMOS load device also provides a constant current charging the load capacitance during the pull up of the output voltage (Vo).

0030<figref idref="DRAWINGS">FIG. 2B</figref> illustrates the mirror imaged configuration or a static logic psuedo-pMOS 2-input NAND <b>211</b>. The output voltage (Vo) will be high if one of the inputs C and D are low. The output will be low if and only if both inputs C and D are high turning off the pMOS load devices, transistors <b>212</b> and <b>214</b>, which keep the output high. If both transistors <b>212</b> and <b>214</b> are off then the nMOS device <b>216</b> will pull the output low, this again is a ratioed static logic circuit.

0031The combination of pseudo-nMOS NOR gates and pseudo-pMOS NAND gates can be employed to make up, what we shall call here “static pseudo-CMOS logic circuits.” Note that neither of the gates will have series connected logic input devices which increase the resistance of static CMOS switching circuits and slow circuit response. However, the NAND gate here still uses pMOS devices for pull up during the switching transient and the lower hole mobility results in slower and asymmetrical switching transients.

0032What is required then, and taught by the present application, is a circuit in which pMOS devices are not used during switching transients. This can be accomplished by using dynamic circuit concepts in which the outputs are all precharged high. pMOS devices are used only for precharge. If the output switches low it does so as the result of a discharge through a higher current and performance nMOS device.

0033<figref idref="DRAWINGS">FIG. 3A</figref> illustrates a dynamic pseudo-nMOS 2-input NOR gate <b>301</b>. In one embodiment of the invention, as shown in <figref idref="DRAWINGS">FIG. 3A</figref>, a dynamic pseudo-nMOS NOR gate includes at least two input transistors <b>306</b> and <b>308</b>. According to the teachings of the present invention, the at least two input transistors are n-channel transistors coupled in parallel. A drain region for the at least two input transistors <b>306</b> and <b>308</b> are coupled to an output and to a drain region of a p-channel pre-charge transistor <b>302</b> having a gate coupled to a pre-charge clock, φp. A source region for the at least two input transistors <b>306</b> and <b>308</b> is coupled to a ground through an n-channel enable transistor having a gate coupled to an enable clock, φen. The pMOS transistor <b>302</b> at the top, driven with the precharge clock, φp, is used to precharge the output high. When the enable clock, φen, goes high, driving nMOS transistor <b>304</b>, then the output load capacitance will discharge if input A or B is high, turning on nMOS transistors <b>306</b> and <b>308</b>. This then is the positive logic NOR circuit function.

0034<figref idref="DRAWINGS">FIG. 3B</figref> illustrates a dynamic pseudo-pMOS 2-input NAND gate <b>311</b>. In one embodiment of the invention, as shown in <figref idref="DRAWINGS">FIG. 3B</figref>, a dynamic pseudo-pMOS NAND gate includes at least two input transistors <b>316</b> and <b>318</b>. According to the teachings of the present invention, the at least two input transistors <b>316</b> and <b>318</b> are p-channel transistors coupled in parallel. A drain region for the at least two input transistors <b>316</b> and <b>318</b> are coupled to a ground through an n-channel enable transistor <b>314</b> having a gate coupled to an enable clock, φen. The drain region for the at least two input transistors <b>316</b> and <b>318</b> are coupled to an output. And, according to the teachings of the present invention, the at least two input transistors are coupled in parallel with a p-channel pre-charge transistor <b>312</b> having a gate coupled to a pre-charge clock, φp.

0035The pMOS transistor <b>312</b> at the top, driven with the precharge clock, φp, is used to precharge the output high. When the enable clock, φen, driving nMOS transistor <b>314</b>, goes high then the output load capacitance can discharge if and only if inputs C and D are high, turning off pMOS transistors <b>316</b> and <b>318</b>. Unless both inputs C and D are high, one of the transistors, <b>316</b> or <b>318</b>, will conduct holding the output high. This then is the positive logic NAND circuit function. The output goes low if and only if both inputs C and D are high.

0036A combination of dynamic pseudo-nMOS NOR gates (<figref idref="DRAWINGS">FIG. 3A</figref>) and dynamic pseudo-pMOS NAND gates (<figref idref="DRAWINGS">FIG. 3B</figref>) can be used for dynamic pseudo-CMOS logic circuits according to the teachings of the present invention.

0037<figref idref="DRAWINGS">FIG. 4A</figref> illustrates the switching of static CMOS gates, in this case a series of inverters <b>401</b>-<b>1</b>, <b>401</b>-<b>2</b>, . . . , <b>401</b>-N. If the input (Vin) switches high the outputs on all stages make a transition of a voltage swing equal to the power supply voltage. Each of these transitions occur sequentially, one being essentially complete before the other begins. This requires a long switching time before valid data appears at the end of the series of inverters <b>401</b>-<b>1</b>, <b>401</b>-<b>2</b>, . . . , <b>401</b>-N.

0038<figref idref="DRAWINGS">FIG. 4B</figref> illustrates the switching of a series of inverters <b>403</b>-<b>1</b>, <b>403</b>-<b>2</b>, . . . , <b>403</b>-N in an output prediction logic circuit (OPL). In output prediction logic all the outputs are precharged high and delayed clocks are used to enable each stage in succession, shown in <figref idref="DRAWINGS">FIG. 4B</figref> as φen<b>1</b>, φen<b>2</b>, φen<b>3</b> and φen<b>4</b>. <figref idref="DRAWINGS">FIG. 4D</figref> is a graph which plots applied potential vs. time and illustrates the delayed clocks φp, φen, φen<b>2</b>, φen<b>3</b>, and φen<b>4</b>.

0039It is noted in <figref idref="DRAWINGS">FIG. 4B</figref> that only one half the outputs need to change state. As a result OPL can be clocked with the enable clocks shown in <figref idref="DRAWINGS">FIG. 4D</figref> with only a small time separation and OPL is two to four time faster that static CMOS logic.

0040OPL is a static logic family so a simple inverter requires four transistors, also there will be series connections of NMOS devices in NAND gates. The combination of a large number of transistors and series connections reduces switching speed.

0041<figref idref="DRAWINGS">FIG. 4C</figref> illustrates a series of pseudo-CMOS dynamic logic gates <b>405</b>-<b>1</b>, <b>405</b>-<b>2</b>, . . . , <b>405</b>-N with the delayed enable clocks shown in <figref idref="DRAWINGS">FIG. 4D</figref> according to the teachings of the present invention. The delayed enable clocks in <b>4</b>C are the same delayed clocks used in OPL and shown in <figref idref="DRAWINGS">FIG. 4B</figref>. Like OPL, in the chain of inverters <b>405</b>-<b>1</b>, <b>405</b>-<b>2</b>, . . . , <b>405</b>-N shown in <figref idref="DRAWINGS">FIG. 4C</figref> only one half of the outputs will be required to make a transition over the full power supply voltage.

0042According to the teachings of the present invention Pseudo-CMOS dynamic logic gates with delayed clocks will be faster than OPL due to the smaller number of transistors in a gate, the absence of any series devices in NAND gates, and the dynamic nature of the circuits.

0043<figref idref="DRAWINGS">FIG. 5</figref> is a block diagram of an electrical system, or processor-based system, <b>500</b>. The processor-based system <b>500</b> may be a computer system, a process control system or any other system employing a processor and associated memory. The system <b>500</b> includes a central processing unit (CPU) <b>502</b>, e.g., a microprocessor, that communicates with the memory <b>512</b> and an I/O device <b>508</b> over a bus <b>520</b>. According to the teachings of the present invention the processor includes a series of pseudo-CMOS dynamic logic gates with delayed clocks. It must be noted that the bus <b>520</b> may be a series of buses and bridges commonly used in a processor-based system, but for convenience purposes only, the bus <b>520</b> has been illustrated as a single bus. A second I/O device <b>510</b> is illustrated, but is not necessary to practice the invention. The processor-based system <b>500</b> can also includes read-only memory (ROM) <b>514</b> and may include peripheral devices such as a floppy disk drive <b>504</b> and a compact disk (CD) ROM drive <b>506</b> that also communicates with the CPU <b>502</b> over the bus <b>520</b> as is well known in the art.

0044It will be appreciated by those skilled in the art that additional circuitry and control signals can be provided, and that the processor-based system <b>500</b> has been simplified to help focus on the invention.

0045It will be understood that the embodiment shown in <figref idref="DRAWINGS">FIG. 5</figref> illustrates an embodiment for electronic system circuitry in which a series of pseudo-CMOS dynamic logic gates with delayed clocks are used. The illustration of system <b>500</b>, as shown in <figref idref="DRAWINGS">FIG. 5</figref>, is intended to provide a general understanding of one application for the structure and circuitry of the present invention, and is not intended to serve as a complete description of all the elements and features of an electronic system using the series of pseudo-CMOS dynamic logic gates with delayed clocks. Further, the invention is equally applicable to any size and type of system <b>500</b> using the series of pseudo-CMOS dynamic logic gates with delayed clocks, and is not intended to be limited to that described above. As one of ordinary skill in the art will understand, such an electronic system can be fabricated in single-package processing units, or even on a single semiconductor chip, in order to reduce the communication time between the processor and the memory device.

0046Applications containing the novel logic gates described in this disclosure, include electronic systems for use in memory modules, device drivers, power modules, communication modems, processor modules, and application-specific modules, and may include multilayer, multichip modules. Such circuitry can further be a subcomponent of a variety of electronic systems, such as a clock, a television, a cell phone, a personal computer, an automobile, an industrial control system, an aircraft, and others.

0000Methods of Formation and Operation

0047A method of forming a logic circuit with delayed clocks includes forming a dynamic pseudo-nMOS logic gate and forming a dynamic pseudo-pMOS logic gate coupled thereto. In one embodiment, forming the dynamic pseudo-nMOS logic gate includes forming a dynamic pseudo-nMOS NOR gate and forming the dynamic pseudo-pMOS logic gate includes forming a dynamic pseudo-pMOS NAND gate.

0048According to the teachings of the present invention, forming the dynamic pseudo-nMOS logic gate includes forming at least two input transistors and coupling a delayed enable clock transistor to a source region of the at least two input transistors. According to the teachings of the present invention, forming the at least two input transistors includes forming n-channel transistors coupled in parallel, where a drain region for the at least two input transistors are coupled to an output. The method further includes forming a p-channel pre-charge transistor having a gate coupled to a pre-charge clock and coupling a drain region for the at least two input transistors to a drain region of the p-channel pre-charge transistor.

0049According to the teachings of the present invention, forming the dynamic pseudo-pMOS logic gate includes forming at least two input transistors and coupling a delayed enable clock transistor to a drain of at least two input transistors. According to the teachings of the present invention, forming the at least two input transistors includes forming p-channel transistors coupled in parallel. The method includes forming an n-channel enable transistor having a gate coupled to an enable clock. A drain region for the at least two input transistors are coupled to a ground through the n-channel enable transistor. The method further includes forming a p-channel pre-charge transistor having a gate coupled to a pre-charge clock and coupling the p-channel pre-charge transistor in parallel with the at least two input transistors. The method further includes coupling the drain region for the at least two input transistors to an output.

0050A method for operating a logic circuit includes providing an input signal to a series of pseudo-CMOS dynamic logic gates with delayed clocks. The series has an input and an output. The series is repeating and each pseudo-CMOS dynamic logic gates includes a dynamic pseudo-nMOS NOR gate having an input and an output and a dynamic pseudo-pMOS NAND gate having an input and an output. The dynamic pseudo-pMOS NAND gate is coupled to the dynamic pseudo-nMOS NOR gate. In operation, the method includes pre-charging all of the outputs high and utilizing p-channel devices for pre-charge only.

CONCLUSION

0051The above structures and fabrication methods have been described, by way of example and not by way of limitation, with respect to pseudo-CMOS dynamic logic gates with delayed clocks.

0052Pseudo-CMOS dynamic logic gates with delayed clocks is a new CMOS logic family with potential for extremely fast switching speeds. Unlike static CMOS it has no series connections of logic devices, it requires fewer transistors than either static CMOS or OPL. And, like OPL, only about one half the outputs of the logic gates are required to make a transition of the full power supply voltage during the evaluation of any input to the chain. Like all dynamic circuit families the present invention has the potential for high switching speed and low power consumption.