Multi-finger transistor layout for reducing cross-finger electric variations and for fully utilizing available breakdown voltages

BACKGROUND

0001The present disclosure relates generally to integrated circuit device design, and more specifically, to a layout for a field effect transistor (FET) device with a multi-finger gate structure and multiple source/drain regions.

0002Multi-fingered field effect transistors (FETs) are widely used in various integrated circuit applications. Multi-finger transistor layouts are widely used in CMOS circuit designs. Compared with single-finger transistor layout, its main features include effectiveness in reducing circuit physical size, reducing gate resistance (and thus improve the RF performance of the FET), and improving device matching. There is a need to make each finger's source node voltage the same for all fingers and also to make each finger's drain node voltage the same for all fingers. Namely, there exists a need to reduce cross-finger electric variations of the multi-finger FET device.

0003In conventional multi-finger transistor layouts, electric currents passing through individual finger transistors are not the same. More specifically, there are more drain current and more gate leakage current in an outer finger than those in an inner finger. In other words, when going from an outer finger to an inner finger, there is a systematic variation in each finger's electric current. Additionally, for a given drain breakdown voltage of a given FET type, prior-art multi-finger layout cannot fully utilize available drain breakdown voltage.

SUMMARY

0004According to one embodiment herein, a method for creating a semiconductor transistor design is disclosed. The semiconductor transistor design comprises a field effect transistor having a multi-finger gate structure on a diffusion shape. The multi-finger gate structure comprises gate fingers, and the diffusion shape comprises a diffusion edge positioned along a periphery of the diffusion shape. According to the method, inner diffusion regions of the multi-finger gate structure are identified as being between the gate fingers. Outer diffusion regions of the multi-finger gate structure are identified as being one of: between one of the gate fingers and the diffusion edge, and between one of the gate fingers and a dummy finger. The dummy finger is parallel to and electrically disconnected from the gate fingers. Each of the inner diffusion regions is identified as being one of inner source regions and inner drain regions. Each of the outer diffusion regions is identified as being one of outer source regions and outer drain regions. Electrical contacts are established in the inner diffusion region and the outer diffusion region. Since the drain current through an inner diffusion region and its contacts is approximately twice the drain current through an outer diffusion region and its contacts, the establishing of the electrical contacts complies with a first ratio of there being approximately twice as many of the electrical contacts in the inner source regions as in the outer source regions, and the establishing of the electrical contacts complies with a second ratio of there being approximately twice as many of the electrical contacts in the inner drain regions as in the outer drain regions. The first ratio is tuned to cause a voltage drop across the electrical contacts in the inner source regions and the electrical contacts in the outer source regions to be approximately equal for all the gate fingers. The second ratio is tuned to cause a voltage drop across the electrical contacts in the inner drain regions and the electrical contacts in the outer drain regions to be approximately equal for all the gate fingers.

0005According to another embodiment herein, a semiconductor transistor structure is disclosed. The semiconductor transistor structure comprises a field effect transistor having a multi-finger gate structure comprising gate fingers and a diffusion shape comprising a diffusion edge positioned along a periphery of the diffusion shape. The diffusion shape comprises inner diffusion regions of the multi-finger gate structure. The inner diffusion regions are between the gate fingers. The inner diffusion regions are one of inner source regions and inner drain regions. The diffusion shape further comprises outer diffusion regions of the multi-finger gate structure. The outer diffusion regions are one of: between one of the gate fingers and the diffusion edge and between one of the gate fingers and a dummy finger. A dummy finger is parallel to and electrically disconnected from the gate fingers. The outer diffusion regions are one of outer source regions and outer drain regions. A plurality of electrical contacts is in the inner diffusion regions and the outer diffusion regions. There is a first ratio of approximately twice as many of the electrical contacts in the inner source regions as in the outer source regions and a second ratio of approximately twice as many of the electrical contacts in the inner drain regions as in the outer drain regions. The first ratio is tuned such that a voltage drop across the electrical contacts in the inner source regions and the electrical contacts in the outer source regions is approximately equal for all the gate fingers. The second ratio is tuned such that a voltage drop across the electrical contacts in the inner drain regions and the electrical contacts in the outer drain regions is approximately equal for all the gate fingers.

0006According to another embodiment herein, a non-transitory computer readable storage medium readable by a computerized device disclosed. The non-transitory computer readable storage medium stores instructions executable by the computerized device to perform a method for creating a semiconductor transistor design comprising a field effect transistor having a multi-finger gate structure on a diffusion shape. The multi-finger gate structure comprises gate fingers, and the diffusion shape comprises a diffusion edge positioned along a periphery of the diffusion shape. According to the method, inner diffusion regions of the multi-finger gate structure are identified as being between the gate fingers. Outer diffusion regions of the multi-finger gate structure are identified as being one of: between one of the gate fingers and the diffusion edge, and between one of the gate fingers and a dummy finger. The dummy finger is parallel to and electrically disconnected from the gate fingers. Each of the inner diffusion regions is identified as being one of inner source regions and inner drain regions. Each of the outer diffusion regions is identified as being one of outer source regions and outer drain regions. Electrical contacts are established in the inner diffusion region and the outer diffusion region. Since the drain current through an inner diffusion region and its contacts is approximately twice the drain current through an outer diffusion region and its contacts, the establishing of the electrical contacts complies with a first ratio of there being approximately twice as many of the electrical contacts in the inner source regions as in the outer source regions, and the establishing of the electrical contacts complies with a second ratio of there being approximately twice as many of the electrical contacts in the inner drain regions as in the outer drain regions. The first ratio is tuned to cause a voltage drop across the electrical contacts in the inner source regions and the electrical contacts in the outer source regions to be approximately equal for all the gate fingers. The second ratio is tuned to cause a voltage drop across the electrical contacts in the inner drain regions and the electrical contacts in the outer drain regions to be approximately equal for all the gate fingers.

BRIEF DESCRIPTION OF THE DRAWINGS

0007The embodiments herein will be better understood from the following detailed description with reference to the drawings, which are not necessarily drawn to scale, and in which:

0008<figref idref="DRAWINGS">FIG. 1</figref> is a layout of a multi-finger FET;

0009<figref idref="DRAWINGS">FIG. 2</figref> is a schematic diagram of a semiconductor structure illustrating embodiments herein;

0010<figref idref="DRAWINGS">FIG. 3</figref> is a schematic diagram of a semiconductor structure illustrating embodiments herein;

0011<figref idref="DRAWINGS">FIG. 4</figref> is a schematic diagram of a semiconductor structure illustrating embodiments herein;

0012<figref idref="DRAWINGS">FIG. 5</figref> is a schematic diagram of a semiconductor structure illustrating embodiments herein;

0013<figref idref="DRAWINGS">FIG. 6</figref> is a schematic diagram of a semiconductor structure illustrating embodiments herein;

0014<figref idref="DRAWINGS">FIG. 7</figref> is a schematic diagram of a semiconductor structure illustrating embodiments herein;

0015<figref idref="DRAWINGS">FIG. 8</figref> is a schematic diagram of a semiconductor structure illustrating embodiments herein;

0016<figref idref="DRAWINGS">FIG. 9</figref> is a schematic diagram of a semiconductor structure illustrating embodiments herein;

0017<figref idref="DRAWINGS">FIG. 10</figref> is a schematic diagram of a semiconductor structure illustrating embodiments herein;

0018<figref idref="DRAWINGS">FIG. 11</figref> is a schematic diagram of a semiconductor structure illustrating embodiments herein;

0019<figref idref="DRAWINGS">FIG. 12</figref> is a schematic diagram of a semiconductor structure illustrating embodiments herein;

0020<figref idref="DRAWINGS">FIG. 13</figref> is a schematic diagram of a semiconductor structure illustrating embodiments herein;

0021<figref idref="DRAWINGS">FIG. 14</figref> is a flow diagram illustrating embodiments herein;

0022<figref idref="DRAWINGS">FIG. 15</figref> is a schematic diagram of a hardware system according to embodiments herein;

0023<figref idref="DRAWINGS">FIG. 16</figref> is a schematic diagram of a deployment system according to embodiments herein;

0024<figref idref="DRAWINGS">FIG. 17</figref> is a schematic diagram of an integration system according to embodiments herein;

0025<figref idref="DRAWINGS">FIG. 18</figref> is a schematic diagram of an on demand system according to embodiments herein;

0026<figref idref="DRAWINGS">FIG. 19</figref> is a schematic diagram of a virtual private network system according to embodiments herein; and

0027<figref idref="DRAWINGS">FIG. 20</figref> is a schematic diagram of a virtual private network system according to embodiments herein.

DETAILED DESCRIPTION

0028The embodiments herein and the various features and advantageous details thereof are explained more fully with reference to the non-limiting embodiments that are illustrated in the accompanying drawings and detailed in the following description.

0029Referring now to the drawings, there are shown exemplary illustrations of the method and structures of a multi-finger FET (field effect transistor) and processes for designing and layout according to embodiments herein. The claims herein can define a semiconductor structure, a method for manufacturing such a structure, a process for designing the structure, etc. The processes herein can include, for example, positioning elements such as gates, diffusion regions, conductive regions, contacts, etc., within an overall integrated circuit design and such can include making physical changes to elements and/or making changes to designs (which may be maintained in written form, in computerized (digital) form, etc.). Therefore, while some structures are described below, this disclosure of such structures also includes the methods for making such structures and the methods for designing such structures.

0030For purposes herein, a “semiconductor” is a material or structure that may include an implanted impurity that allows the material to sometimes be a conductor and sometimes be an insulator, based on electron and hole carrier concentration. As used herein, “implantation processes” can take any appropriate form (whether now known or developed in the future) and can comprise, for example, ion implantation, etc.

0031<figref idref="DRAWINGS">FIG. 1</figref> illustrates a layout of a multi-finger FET, where the contact number in a source region is the same for all source regions and the contact number in a drain region is the same for all drain regions. Typically, contact resistance is much larger than diffusion resistance and wire resistance. The drain current through an inner diffusion region and its contacts is approximately twice the drain current through an outer diffusion region and its contacts. Thus, the voltage drop across all contacts in an inner diffusion region is about twice of the voltage drop across all contacts in an outer diffusion region. There is a larger drain voltage (V_d−V_s) for any finger with an outer diffusion and a larger gate voltage (V_g−V_s) for any finger with an outer source. This leads to a larger drain current for any outer finger with an outer source (from linear to saturation regions) and a larger drain current for any outer finger with an outer drain (linear region). This also results in larger gate leakage current for any outer finger with an outer source.

0032Other structures and methods herein include a multi-fingered FET with multiple contacts in a source/drain region. As shown in <figref idref="DRAWINGS">FIG. 2</figref>, a FET device <b>200</b> can comprise a single gate structure <b>213</b> comprising a main body <b>216</b> and multiple essentially parallel fingers <b>219</b>, <b>220</b> (also referred to as segments or extensions) extending laterally from one side of the main body <b>216</b> across a semiconductor body <b>223</b>. The semiconductor body <b>223</b> defines a diffusion shape, indicated as RX. Each finger <b>219</b>, <b>220</b> can be positioned adjacent to (i.e., on, above, etc.) a corresponding diffusion region <b>226</b>, <b>227</b>, <b>228</b>. The diffusion regions <b>226</b>, <b>227</b>, <b>228</b> are either the source region <b>231</b> or the drain region <b>234</b> of the multi-finger FET <b>200</b>.

0033For example, as illustrated in <figref idref="DRAWINGS">FIG. 2</figref>, gate finger <b>219</b> is positioned between diffusion region <b>226</b>, a source region, and diffusion region <b>227</b>, a drain region; and gate finger <b>220</b> is positioned between diffusion region <b>227</b>, a drain region, and diffusion region <b>228</b>, a source region.

0034The device may also include one or more dummy fingers <b>237</b>, <b>238</b>. A dummy finger is either a finger outside a diffusion shape RX or a finger whose width is not completely within a diffusion shape. Advanced semiconductor technologies typically require dummy PC shapes to better print out PC shapes on wafers.

0035Additionally, the diffusion regions <b>226</b>, <b>227</b>, <b>228</b> are identified as inner diffusion regions or outer diffusion regions. A diffusion region between two active fingers, such as between <b>219</b> and <b>220</b>, is an inner diffusion region. In <figref idref="DRAWINGS">FIG. 2</figref>, region <b>227</b> is an inner diffusion region. A diffusion region between an active finger and an edge of the diffusion shape RX is an outer diffusion region, and a diffusion region between an active finger and a dummy finger, such as between <b>220</b> and <b>238</b>, is also an outer diffusion region. In <figref idref="DRAWINGS">FIG. 2</figref>, regions <b>226</b> and <b>228</b> are outer diffusion regions.

0036<figref idref="DRAWINGS">FIG. 2</figref> shows three examples in which the number of fingers is two; therefore, according to embodiments herein, when the number of fingers is two, the transistor layout is completely symmetric. That is, the same number of diffusion region contacts <b>241</b>, <b>242</b> is used in each of the two outer diffusion regions <b>226</b>, <b>228</b>. Furthermore, the layout of source and drain regions within the semiconductor body <b>223</b> can be such that a shared source region or a shared drain region is located between adjacent gate fingers. A via <b>249</b>, located half way between contacts <b>241</b> and <b>242</b>, serves as a common electrical connection point on the source side for all drain currents, i.e., a point in a drain current path where the drain currents from all fingers first meet. A point of a metal wire that collects all drain currents can also be a common connection point for all drain currents. In the middle layout in <figref idref="DRAWINGS">FIG. 2</figref>, an electrical connector <b>252</b>, such as a metal wire, connects both outer diffusion regions <b>226</b>, <b>228</b>. A simple cut in the metal wire, such as <b>259</b> of the electrical connector <b>252</b>, is a common connection point for all drain currents. According to embodiments herein, the electrical connector <b>252</b> is symmetric with respect to both outer diffusion regions <b>226</b>, <b>228</b>.

0037Referring to <figref idref="DRAWINGS">FIG. 3</figref>, a FET <b>300</b> having a three-finger gate <b>303</b> is shown. FET <b>300</b> includes a gate <b>303</b> with multiple essentially parallel fingers <b>306</b>-<b>308</b>, several dummy fingers <b>311</b>-<b>314</b>, and a semiconductor body <b>317</b> that defines a diffusion shape, indicated as RX, which is divided into inner diffusion regions and outer diffusion regions. The FET <b>300</b> includes an outer source region <b>320</b> and an inner source region <b>321</b>, and an outer drain region <b>324</b> and an inner drain region <b>325</b>.

0038According to embodiments herein, there are several diffusion region contacts <b>331</b>-<b>336</b> in the contact layer. As shown, there can be more contacts <b>331</b>, <b>333</b> in an inner source region <b>321</b> than contacts <b>335</b> in an outer source region <b>320</b>, and there are more contacts <b>332</b>, <b>334</b> in an inner drain region <b>325</b> than contacts <b>336</b> in an outer drain region <b>324</b>. As shown in the illustration on the right, the number of contacts in each inner source region is twice that in each outer source region, and the number of contacts in each inner drain region is twice that in each outer drain region. An electrical connector <b>339</b>, such as a first metal wire in the lowest metal layer M1, connects the outer source region <b>320</b> and the inner source region <b>321</b>. A second electrical connector <b>342</b>, such as a second metal wire in the lowest metal layer M1, connects the outer drain region <b>324</b> and the inner drain region <b>325</b>.

0039The illustrations in <figref idref="DRAWINGS">FIG. 4</figref> focus is on the drain regions <b>324</b>, <b>325</b>, which are connected by the second electrical connector <b>342</b>. (In <figref idref="DRAWINGS">FIG. 4</figref>, the dummy fingers are not shown to improve clarity.) According to the illustrated embodiments, the number of contacts N_{d, outer}in the outer drain region <b>324</b> may be adjusted. <figref idref="DRAWINGS">FIG. 4</figref> shows several layouts having the same number of electrical contacts N_{d, inner}in the inner drain region <b>325</b>, but different numbers of contacts in the outer drain region <b>324</b>. As shown herein, calculate the difference between the resistance for the outer drain region <b>324</b> and the inner drain region <b>325</b> using an equation such as |R_{d, outer}−2R_{d, inner}| for each layout. Notice that R_{d, outer}≈R_1contact/N_{d, outer}+R_{d, outer, diffusion}+R_{d, outer, wire}, R_{d, inner}≈R_1contact/N_{d, inner}+R_{d, inner, diffusion}+R_{d, inner, wire}, where R_1contactis the resistance of a single contact. Choose the layout that has the smallest difference.

0040The illustrations in <figref idref="DRAWINGS">FIG. 5</figref> continue to focus on the drain regions <b>324</b>, <b>325</b>. (In <figref idref="DRAWINGS">FIG. 5</figref>, the dummy fingers are not shown to improve clarity.) According to the illustrated embodiments, the locations of the electrical contacts <b>332</b>, <b>334</b>, <b>336</b> in the drain regions <b>324</b>, <b>325</b> may be adjusted. Additionally, the location of via <b>345</b> (which represents a common connection point of all drain current) may be adjusted. First, as shown on the left, before adjusting the location of the electrical contacts <b>332</b>, <b>334</b>, <b>336</b> in the drain regions <b>324</b>, <b>325</b>, the resistance of the outer drain region <b>324</b> is greater than twice of the resistance of the inner drain region <b>325</b> (R_{d, outer}>2R_{d, inner}) due to a larger diffusion (RX) resistance R_{d, outer, diffusion}in the outer drain region <b>324</b>. As shown in the middle illustration, after adjusting the location of the outer drain electrical contact point <b>336</b>, the diffusion resistance R_{d, outer, diffusion}of the outer drain <b>324</b> is reduced; that is, the difference in (R_{d, outer}−2R_{d, inner}) is reduced, leading to a smaller drain-node voltage spread between the inner drain region <b>325</b> and the outer drain region <b>324</b>, |V_{d, outer}−V_{d, inner}|. If the resistance of the outer drain region <b>324</b> is still larger than twice of the resistance of the inner drain region <b>325</b> (R_{d, outer}>2R_{d, inner}), then the diffusion resistance |R_{d, outer}−2R_{d, inner}| can be further reduced by moving the via <b>345</b> (again, it represents a common connection point of all drain current) towards the outer drain region <b>324</b>, as shown on the right.

0041<figref idref="DRAWINGS">FIG. 6</figref> shows the evolution of the FET <b>300</b> with focus on the inner and outer source regions <b>321</b>, <b>320</b>, respectively. (In <figref idref="DRAWINGS">FIG. 6</figref>, the dummy fingers are not shown to improve clarity.) Each of the three illustrations have the same number of electrical contacts in the inner source region <b>321</b>, but different numbers of electrical contacts in the outer source region <b>320</b>. As shown herein, calculate the difference between the resistance for the outer source region <b>320</b> and the inner source region <b>321</b> using an equation such as |R_{s, outer}−2R_{s, inner}| for each layout. Choose the layout that has the smallest difference.

0042The illustrations in <figref idref="DRAWINGS">FIG. 7</figref> continue to focus on the source regions <b>320</b>, <b>321</b>. (In <figref idref="DRAWINGS">FIG. 7</figref>, the dummy fingers are not shown to improve clarity.) According to the illustrated embodiments, the locations of the electrical contacts <b>331</b>, <b>333</b>, <b>335</b> in the source regions <b>320</b>, <b>321</b> may be adjusted. As shown in <figref idref="DRAWINGS">FIG. 7</figref>, on the left, the diffusion resistance in the outer source region <b>320</b> is minimized, and so is the diffusion resistance of the inner source region <b>321</b>. However, it is found that the resistance of the outer source region <b>320</b> is greater than twice of the resistance of the inner source region <b>321</b> (R_{s, outer}>2R_{s, inner}). In this case, we can increase the diffusion resistance of the inner source region <b>321</b>, as shown on the right, by moving the two electrical contacts <b>331</b>, <b>333</b> in the inner source region <b>321</b> away from being symmetric and by moving one electric contact <b>333</b> away from the center of the lower half source region. Thus, the difference between the resistance of the outer source region <b>320</b> and twice the resistance of the inner source region <b>321</b> (|R_{s, outer}−2R_{s, inner}|) is reduced, leading to a smaller source-node voltage spread between the inner source region <b>321</b> and the outer source region <b>320</b>, |V_{s, outer}−V_{s, inner}|.

0043<figref idref="DRAWINGS">FIG. 8</figref> shows a FET <b>400</b> having a four-finger gate <b>405</b> with multiple essentially parallel fingers <b>408</b>-<b>411</b>, several dummy fingers <b>414</b>-<b>417</b>, and a semiconductor body <b>420</b> that defines a diffusion shape, indicated as RX, which is divided into inner diffusion regions and outer diffusion regions. When the number of finger is an even number, commonly there are two outer source regions and no outer drain regions. In such a case, the number of drain regions is half the number of fingers. It is possible to have the opposite case of two outer drain regions and no outer source region, but that is less common. As shown in <figref idref="DRAWINGS">FIG. 8</figref>, the FET <b>400</b> includes two outer source regions <b>423</b>, <b>424</b> and one inner source region <b>425</b>. The FET <b>400</b> also includes two inner drain regions <b>428</b>, <b>429</b>.

0044According to embodiments herein, an equal number of electrical contacts are established in each outer source region <b>423</b>, <b>424</b>. The number of electrical contacts in each outer source region <b>423</b>, <b>424</b> should be less than the number of electrical contacts in the inner source region <b>425</b>. The number and locations of the electrical contacts in one inner drain region <b>428</b> should be identical to the number and locations of the electrical contacts in the other inner drain region <b>429</b>.

0045As shown in <figref idref="DRAWINGS">FIG. 8</figref>, a first electrical connector <b>433</b>, such as a first metal wire in the first metal layer M1, connects all the electrical contacts in the source regions <b>423</b>-<b>425</b>. A first via <b>436</b> (which represents a common connection point on the source side for all drain currents) is located at approximately a middle point of the first electrical connector <b>433</b>. A second electrical connector <b>439</b>, such as a second metal wire in the first metal layer, connects all the drain regions <b>428</b>, <b>429</b>. A second via <b>442</b> (which is a common connection point of all drain current on the drain side) is located at approximately a middle point of the second electrical connector <b>439</b>.

0046According to embodiments herein, the number of electrical contacts in the inner source region <b>425</b> and the locations of the electrical contacts in the inner source region <b>425</b>, and the number of electrical contacts in both outer source regions <b>423</b>, <b>424</b> and the locations of the electrical contacts in both outer source regions <b>423</b>, <b>424</b> are adjusted so that the source-node voltage of the inner source region <b>425</b> is equal to the source-node voltages of the outer source regions <b>423</b>, <b>424</b>.

0047The illustrations in <figref idref="DRAWINGS">FIG. 9</figref> focus on the inner and outer source regions <b>423</b>-<b>425</b> of the FET <b>400</b>. (In <figref idref="DRAWINGS">FIG. 9</figref>, the dummy fingers are not shown to improve clarity.) On the left, there are five electrical contacts in the inner source region <b>425</b> and two electrical contacts for each of the two outer source regions <b>423</b>, <b>424</b>. On the right, there are five electrical contacts in the inner source region <b>425</b> and three electrical contacts for each of the two outer source regions <b>423</b>, <b>424</b>. According to embodiments herein, the number of contacts may be adjusted to reduce the spread in voltage (IR) drop between the outer source-node voltage and inner source-node voltage, taking into consideration that the drain current passing through the inner source region <b>425</b> is about twice of the drain current passing through the two outer source regions <b>423</b>, <b>424</b>. For each of the two layouts, determine the parasitic resistance (R_{s, outer}) of an outer source region <b>423</b>, <b>424</b> and the parasitic resistance (R_{s, inner}) of an inner source region <b>425</b>, and calculate the voltage (IR) drops ΔV_{s, outer}(=I_{s, outer}R_{s, outer}) and ΔV_{s, inner}(=2I_1fingerR_{s, Inner}) as well as the difference between them |ΔV_{s, outer}−ΔV_{s, inner}|(=I₁|R_{s, outer}−2R_{s, inner}). Choose the layout that has a smaller difference.

0048<figref idref="DRAWINGS">FIG. 10</figref> shows a FET <b>500</b> having a five-finger gate <b>504</b> with multiple essentially parallel fingers <b>507</b>-<b>511</b>, dummy fingers <b>514</b>, <b>515</b>, and a semiconductor body <b>518</b> that defines a diffusion shape, indicated as RX, which is divided into inner diffusion regions and outer diffusion regions. When the number of fingers is an odd number, there is one outer source region <b>521</b> and one outer drain region <b>524</b>. When the number of fingers is at least five, there will be at least two inner drain regions and at least two inner source regions. As shown in <figref idref="DRAWINGS">FIG. 10</figref>, there are two inner source regions <b>527</b>, <b>528</b> and two inner drain regions <b>531</b>, <b>532</b>.

0049According to embodiments herein, there are several electrical contacts located in the diffusion regions. As shown, there are more contacts in an inner source region than in an outer source region, and there are more contacts in an inner drain region than in an outer drain region. In some embodiments, the number of contacts in each inner source region is twice that in each outer source region and the number contacts in each inner drain region is twice that in each outer drain region. As shown in <figref idref="DRAWINGS">FIG. 10</figref>, an electrical connector <b>535</b>, such as a first metal wire in the first metal layer (M1), connects the three source regions <b>521</b>, <b>527</b>, <b>528</b>. A second electrical connector <b>540</b>, such as a second metal wire in the first metal layer (M1), connects the three drain regions <b>524</b>, <b>531</b>, <b>532</b>. A first via <b>543</b> (which is a common connection point of the drain current on the source side), is established in the first electrical connector <b>535</b>, and a second via <b>546</b> (which is a common connection point of all drain currents on the drain side) is established in the second electrical connector <b>540</b>.

0050According to embodiments herein, the number of electrical contacts in the three source regions <b>521</b>, <b>527</b>, <b>528</b>, the locations of the electrical contacts in the three source regions <b>521</b>, <b>527</b>, <b>528</b>, and the position of the first via <b>543</b> is adjusted to reduce the source-node voltage spread among the three source regions <b>521</b>, <b>527</b>, <b>528</b>. Additionally, the number of electrical contacts in the three drain regions <b>524</b>, <b>531</b>, <b>532</b>, the locations of the electrical contacts in the three drain regions <b>524</b>, <b>531</b>, <b>532</b>, and the position of the second via <b>546</b> is adjusted to reduce the drain-node voltage spread among the three drain regions <b>524</b>, <b>531</b>, <b>532</b>.

0051<figref idref="DRAWINGS">FIG. 11</figref> shows a FET <b>600</b> having a six-finger gate <b>603</b> with multiple essentially parallel fingers <b>606</b>-<b>611</b>, dummy fingers <b>616</b>, <b>617</b>, and a semiconductor body <b>620</b> that defines a diffusion shape, indicated as RX, which is divided into inner diffusion regions and outer diffusion regions. When the number of finger is an even number, commonly there are two outer source regions and no outer drain regions. In such a case, the number of drain regions is half the number of fingers. It is possible to have the opposite case of two outer drain regions and no outer source region, but that is less common. As shown in <figref idref="DRAWINGS">FIG. 11</figref>, the FET <b>600</b> includes two outer source regions <b>623</b>, <b>624</b> and two inner source regions <b>625</b>, <b>626</b>. The FET <b>600</b> also includes three inner drain regions <b>631</b>-<b>633</b>.

0052According to embodiments herein, an equal number of electrical contacts are established in each outer source region <b>623</b>, <b>624</b>. The number of electrical contacts in each outer source region <b>623</b>, <b>624</b> should be less than the number of electrical contacts in the inner source regions <b>625</b>, <b>626</b>. When the number of fingers is at least six fingers, there will be at least three inner drain regions. In that case, the locations of the electrical contacts in all the inner drain regions <b>631</b>-<b>633</b> should be adjusted so that drain-side voltage drops for all the inner drain regions <b>631</b>-<b>633</b> are approximately equal. When the number of fingers is at least six fingers, the drain-side voltage (IR) drops for all drain regions may not be identical (counting IR drop on wires). The locations of the electrical contacts in all the inner drain regions <b>631</b>-<b>633</b> should be adjusted so that the drain-side voltage (IR) drops for all the inner drain regions are about the same.

0053As shown in <figref idref="DRAWINGS">FIG. 11</figref>, a first electrical connector <b>640</b>, such as a first metal wire in the first metal layer M1, connects all the source regions <b>623</b>-<b>626</b>. A first via <b>645</b> (which is a common connection point on the source side for all drain currents) is located at approximately a middle point of the first electrical connector <b>640</b>. A second electrical connector <b>650</b>, such as a second metal wire in the first metal layer M1, connects all the drain regions <b>631</b>-<b>633</b>. A second via <b>655</b> (which is a common connection point of all drain currents point on the drain side) is located at approximately a middle point of the second electrical connector <b>650</b>.

0054According to embodiments herein, the number of electrical contacts in the inner source regions <b>625</b>, <b>626</b> and the locations of the electrical contacts in the inner source regions <b>625</b>, <b>626</b>, and the number of electrical contacts in both outer source regions <b>623</b>, <b>624</b> and the locations of the electrical contacts in both outer source regions <b>623</b>, <b>624</b> may be adjusted to reduce the difference between the source-node voltages of the outer source regions <b>623</b>, <b>624</b> and the source-node voltages of the inner source regions <b>625</b>, <b>626</b>, such as shown in <figref idref="DRAWINGS">FIG. 12</figref>.

0055The illustrations in <figref idref="DRAWINGS">FIG. 12</figref> focus on the inner and outer source regions <b>623</b>-<b>626</b> of the FET <b>600</b>. (In <figref idref="DRAWINGS">FIG. 12</figref>, the dummy fingers are not shown to improve clarity.) The locations of the electrical contacts are adjusted to reduce the difference between inner source-node voltage and outer source-node voltage. On the left, before adjusting locations of the source electrical contacts, R_{s, outer}>2R_{s, inner}, due to a larger diffusion (RX) resistance in the outer source regions <b>623</b>, <b>624</b>. On the right, after adjusting the locations of the source electrical contacts, the diffusion resistance of the outer source regions <b>623</b>,<b>624</b> is reduced; the difference in |R_{s, outer}−2R_{s, inner}| is further reduced, leading to a smaller source-node voltage spread, |V_{s, outer}−V_{s, inner}|.

0056According to another embodiment herein, <figref idref="DRAWINGS">FIG. 13</figref> shows an example of a FET <b>660</b> having a multi-finger gate <b>664</b>. (In <figref idref="DRAWINGS">FIG. 13</figref>, the dummy fingers are not shown to improve clarity.) In the example of <figref idref="DRAWINGS">FIG. 13</figref>, FET <b>660</b> has four source regions <b>671</b>-<b>674</b> and three inner drain regions <b>677</b>-<b>679</b>. This embodiment focuses on the inner drain regions <b>677</b>-<b>679</b> to adjust the locations of the electrical contacts <b>681</b>-<b>683</b>. The location of contact <b>681</b> in drain region <b>677</b> is the same as the location of contact <b>683</b> in drain region <b>679</b>, and is a mirror reflection of the location of contact <b>682</b> in drain section <b>678</b>. According to this embodiment, the diffusion resistances in drain regions <b>677</b>-<b>679</b> are the same. Electrical connectors <b>690</b>, <b>691</b>, such as metal wires, connect all the drain regions <b>677</b>-<b>679</b>. A via <b>696</b> (which is a common connection point on the drain side for all drain currents) is provided for the electrical connectors <b>690</b>, <b>691</b> among the multiple contact levels. When the widths of the electrical connectors <b>690</b> and <b>691</b> are the same, the distance between contact <b>681</b> and the via <b>696</b>, between contact <b>682</b> and the via <b>696</b>, and between contact <b>683</b> and the via <b>696</b> should be the same. This should obtain the same drain-node voltage for drain regions <b>677</b>-<b>679</b>.

0057The electrical conductors mentioned herein can be formed of any conductive material, such as polycrystalline silicon (polysilicon), amorphous silicon, a combination of amorphous silicon and polysilicon, and polysilicon-germanium, rendered conductive by the presence of a suitable dopant. Alternatively, the conductors herein may be one or more metals, such as tungsten, hafnium, tantalum, molybdenum, titanium, nickel, aluminum, or copper, or a metal silicide, any alloys of such metals, and may be deposited using physical vapor deposition, chemical vapor deposition, or any other technique known in the art.

0058For purposes herein, an “insulator” is a relative term that means a material or structure that allows substantially less electrical current to flow than does a “conductor.” The dielectrics (insulators) mentioned herein can, for example, be formed by plasma deposition of SiO2 or SiO2 based materials by reacting either tetra-ethyl-ortho-silane (TEOS) or silane with O2 or activated O2, i.e. O3 or O—. Alternatively, the dielectrics herein may be formed from any of the many candidate high dielectric constant (high-k) materials, including but not limited to silicon nitride, silicon oxynitride, a gate dielectric stack of SiO2 and Si3N4, and metal oxides like tantalum oxide. The thickness of dielectrics herein may vary contingent upon the required device performance.

0059When patterning any material herein, the material to be patterned can be grown or deposited in any known manner and a patterning layer (such as an organic photoresist) can be formed over the material. The patterning layer (resist) can be exposed to some pattern of light radiation (e.g., patterned exposure, laser exposure, etc.) provided in a light exposure pattern, and then the resist is developed using a chemical agent. This process changes the physical characteristics of the portion of the resist that was exposed to the light. Then one portion of the resist can be rinsed off, leaving the other portion of the resist to protect the material to be patterned. A material removal process is then performed (e.g., plasma etching, etc.) to remove the unprotected portions of the material to be patterned. The resist is subsequently removed to leave the underlying material patterned according to the light exposure pattern.

0060Referring to <figref idref="DRAWINGS">FIG. 14</figref>, a method of reducing the voltage spread among individual transistor fingers in a multi-finger transistor is shown. The first step, at <b>905</b>, is to count the number of fingers (n_f) in a multi-finger transistor. Dummy fingers are excluded. A dummy finger is either a finger outside a diffusion (RX) shape or a finger whose width is not completely within a diffusion shape. At <b>911</b>, each diffusion region in the multi-finger transistor is identified as either a source region or a drain region. At <b>917</b>, each diffusion region is identified as either an outer diffusion region or an inner diffusion region. A diffusion region between two active fingers is an inner diffusion region. A diffusion region between an active finger and a diffusion edge is an outer diffusion region. A diffusion region between an active finger and a dummy finger is an outer diffusion region.

0061At <b>923</b>, determine if the number of fingers is greater than or equal to three fingers. If the number of fingers is less than three, that means there are two fingers. In this case, make the transistor layout completely symmetric, as indicated at <b>930</b>. In making the layout symmetric, include the same number of electric contacts for the two outer diffusion regions and make a via (which is a common connection point of all drain currents in the source side) in an electrical connector connecting both outer diffusion regions symmetric with respect to both the outer diffusion regions. A common connection point of the current drain is a point in the drain current path where the drain currents from all fingers first meet.

0062If, at <b>923</b> the number of fingers is greater than or equal to three, proceed to analyze the transistor structure. When, at <b>936</b>, the number of fingers is greater than or equal to four, this means there are two or more inner drain regions; therefore, make the number of contacts in each of inner drain regions the same. When, at <b>942</b>, the number of fingers is greater than or equal to five, this means there are two or more inner source regions; therefore, make the number of contacts in each of inner source regions the same.

0063At <b>948</b>, determine if the number of fingers is an even number. If the number of fingers is an even number, that means either there are two outer source regions and no outer drain region, which is most common, or there are two outer drain regions and no outer source region. In either case, there are n_f/2 inner drain regions or inner source regions. In this case, make the number of contacts in each of outer source regions the same and make the number of contacts in an outer source region less than that in an inner source region. Create a common connection point on the drain side for all drain currents of the transistor in a first electrical connector connecting all the drain regions so that the common connection point on the drain side for all drain currents is located at the middle point of the electrical connector. Create a common connection point of the drain current on the source side of the transistor in another electrical connector connecting all the source regions so that the common connection point of the drain current on the source side is located at the middle point of this second electrical connector. When the number of fingers is an even number, reduce the voltage spread among drain-node voltages, as indicated at <b>954</b>, and reduce the voltage spread among source-node voltages, as indicated at <b>960</b>. The reduction of drain-node voltages and source-node voltages may be accomplished by varying the number of contacts, adjusting the locations of the contacts, the location of a common connection point of all drain current, and/or wire width. Alternatively, or in addition, the reduction of drain-node voltages and source-node voltages may be accomplished by making contact number in an outer source region less than that in an inner source region (when the two outer diffusion regions are source regions) or by making the number of contacts in an outer drain region less than that in an inner drain region (when the two outer diffusion regions are drain regions).

0064When the number of fingers is four, there are two inner drain regions, typically. Make the number of the electrical contacts in one inner drain region identical to that in the other drain region. Make the locations of the electrical contacts in one inner drain region identical to those in the other drain region. When the number of fingers is even and is greater than or equal to six, there are three or more inner drain regions and drain-side voltage (IR) drops for all n_f/2 drain regions are not identical usually (counting IR drop on wires). Adjust the locations of the electrical contacts in the inner drain regions so that the drain-side voltage (IR) drops for all inner drain regions are about the same, i.e., so that the difference among the drain-side voltage drops are reduced.

0065If, at <b>948</b> the number of fingers is an odd number, there is one outer source region and there is one outer drain region. In this case, make the number of contacts in the outer source region less than that in an inner source region and make the number of contacts in the outer drain region less than that in an inner drain region. Form a first electrical connector connecting all the source regions and another electrical connector connecting all the drain regions. When the number of fingers is an odd number, reduce the voltage spread among drain-node voltages, as indicated at <b>966</b> and reduce the voltage spread among source-node voltages, as indicated at <b>972</b>. The reduction of drain-node voltage spread and source-node voltage spread may be accomplished by adjusting the number of contacts, the location of the contacts, the location of a common connection point of all drain current, and/or wire width. Alternatively, or in addition, the reduction of drain-node voltage spread and source-node voltage spread may be accomplished by making the number of contacts in an outer source region less than that in an inner source region and making the number of contacts in an outer drain region less than that in an inner drain region.

0066When the number of fingers is three, there is one inner drain region and one inner source region. Between the outer drain region and the inner drain region, adjust their contact numbers, contact locations, and/or the position of a common connection point on the drain side for all drain currents so that the difference in |R_{d, outer}−2R_{d, inner}| is reduced or is made to be zero. Between the outer source region and the inner source region, adjust their contact numbers, contact locations, and/or the position of a common connection point on the source side for all drain currents so that the difference in |R_{s, outer}−2R_{s, inner}| is reduced or is made to be zero. When the number of fingers is odd and is greater than or equal to five, there are two or more inner drain regions and two or more inner source regions. Among three or more drain regions, adjust their numbers of contacts, contact locations, and/or the position of a common connection point on the drain side for all drain currents to reduce the drain-node voltage spread among them. Among three or more source regions, adjust their numbers of contacts, contact locations, and/or the position of a common connection point on the source side for all drain currents to reduce the source-node voltage spread among them.

0067The method as described above is used in the fabrication of integrated circuit chips. The resulting integrated circuit chips can be distributed by the fabricator in raw wafer form (that is, as a single wafer that has multiple unpackaged chips), as a bare die, or in a packaged form. In the latter case the chip is mounted in a single chip package (such as a plastic carrier, with leads that are affixed to a motherboard or other higher-level carrier) or in a multichip package (such as a ceramic carrier that has either or both surface interconnections or buried interconnections). In any case, the chip is then integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either (a) an intermediate product, such as a motherboard, or (b) an end product. The end product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products having a display, a keyboard or other input device, and a central processor.

0068According to a further embodiment herein, an article of manufacture is provided that includes a computer readable medium having computer readable instructions embodied therein for performing the steps of the computer implemented methods, including but not limited to the method illustrated in <figref idref="DRAWINGS">FIG. 14</figref>. Any combination of one or more computer readable non-transitory medium(s) may be utilized. The computer readable medium may be a computer readable signal medium or a computer readable storage medium. The non-transitory computer storage medium stores instructions, and a processor executes the instructions to perform the methods described herein. A computer readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing.

0069Aspects of the present disclosure are described herein with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments herein. It will be understood that each block of the flowchart illustrations and/or two-dimensional block diagrams, and combinations of blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions/acts specified in the flowchart and/or block diagram block or blocks.

0070The computer program instructions may also be loaded onto a computer, other programmable data processing apparatus, or other devices to cause a series of operational steps to be performed on the computer, other programmable apparatus or other devices to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide processes for implementing the functions/acts specified in the flowchart and/or block diagram block or blocks.

0071Furthermore, the computer program instructions may also be loaded onto a computer, other programmable data processing apparatus, or other devices to cause a series of operational steps to be performed on the computer, other programmable apparatus or other devices to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide processes for implementing the functions/acts specified in the flowchart and/or block diagram block or blocks.

0072In case of implementing the embodiments herein by software and/or firmware, a program constituting the software may be installed into a computer with dedicated hardware, from a storage medium or a network, and the computer is capable of performing various functions if with various programs installed therein.

0073A representative hardware environment for practicing the embodiments herein is depicted in <figref idref="DRAWINGS">FIG. 15</figref>. This schematic drawing illustrates a hardware configuration of an information handling/computer system in accordance with the embodiments herein. The system comprises at least one processor or central processing unit (CPU) <b>10</b>. The CPUs <b>10</b> are interconnected via system bus <b>12</b> to various devices such as a random access memory (RAM) <b>14</b>, read-only memory (ROM) <b>16</b>, and an input/output (I/O) adapter <b>18</b>. The I/O adapter <b>18</b> can connect to peripheral devices, such as disk units <b>11</b> and tape drives <b>13</b>, or other program storage devices that are readable by the system. The system can read the inventive instructions on the program storage devices and follow these instructions to execute the methodology of the embodiments herein.

0074In <figref idref="DRAWINGS">FIG. 15</figref>, CPUs <b>10</b> perform various processing based on a program stored in a Read Only Memory (ROM) <b>16</b> or a program loaded from a peripheral device, such as disk units <b>11</b> and tape drives <b>13</b> to a Random Access Memory (RAM) <b>14</b>. In the RAM <b>14</b>, required data when the CPU <b>10</b> performs the various processing or the like is also stored as necessary. The CPU <b>10</b>, the ROM <b>16</b>, and the RAM <b>14</b> are connected to one another via a bus <b>12</b>. An input/output adapter <b>18</b> is also connected to the bus <b>12</b> to provide an input/output interface, as necessary. A removable medium, such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, or the like, is installed on the peripheral device, as necessary, so that a computer program read therefrom may be installed into the RAM <b>14</b>, as necessary.

0075The system further includes a user interface adapter <b>19</b> that connects a keyboard <b>15</b>, mouse <b>17</b>, speaker <b>24</b>, microphone <b>22</b>, and/or other user interface devices such as a touch screen device (not shown) to the bus <b>12</b> to gather user input. Additionally, a communication adapter <b>20</b> including a network interface card such as a LAN card, a modem, or the like connects the bus <b>12</b> to a data processing network <b>25</b>. The communication adapter <b>20</b> performs communication processing via a network such as the Internet. A display adapter <b>21</b> connects the bus <b>12</b> to a display device <b>23</b>, which may be embodied as an output device such as a monitor (such as a Cathode Ray Tube (CRT), a Liquid Crystal Display (LCD), or the like), printer, or transmitter, for example.

0076In the case where the above-described series of processing is implemented with software, the program that constitutes the software may be installed from a network such as the Internet or a storage medium, such as the removable medium.

0077Those skilled in the art would appreciate that, the storage medium is not limited to the peripheral device having the program stored therein, which is distributed separately from the device for providing the program to the user. Examples of a removable medium include a magnetic disk (including a floppy disk), an optical disk (including a Compact Disk-Read Only Memory (CD-ROM) and a Digital Versatile Disk (DVD)), a magneto-optical disk (including a Mini-Disk (MD) (registered trademark)), and a semiconductor memory, such as a “plug-and-play” memory device. Alternatively, the storage medium may be the ROM <b>16</b>, a hard disk contained in the storage section <b>11</b>, or the like, which has the program stored therein and is distributed to the user together with the device that contains them.

0078A computer readable signal medium may include a propagated data signal with computer readable program code embodied therein, for example, in baseband or as part of a carrier wave. Such a propagated signal may take any of a variety of forms, including, but not limited to, electro-magnetic, optical, or any suitable combination thereof. A computer readable signal medium may be any computer readable medium that is not a computer readable storage medium and that can communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device.

0079Program code embodied on a computer readable medium may be transmitted using any appropriate medium, including but not limited to wireless, wireline, optical fiber cable, RF, etc., or any suitable combination of the foregoing.

0080As will be appreciated by one skilled in the art, aspects of the systems and methods herein may be embodied as a system, method, or computer program product. Accordingly, aspects of the present disclosure may take the form of an entirely hardware embodiment, an entirely software embodiment (including firmware, resident software, micro-code, etc.), or an embodiment combining software and hardware aspects, which may all generally be referred to herein as a “circuit,” “module”, or “system.” Furthermore, aspects of the present disclosure may take the form of a computer program product embodied in one or more computer readable medium(s) having computer readable program code embodied thereon.

0081Computer program code for carrying out operations for aspects of the present disclosure may be written in any combination of one or more programming languages, including an object oriented programming language such as Java, Smalltalk, C++, or the like, and conventional procedural programming languages, such as the “C” programming language or similar programming languages. The program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer, or entirely on the remote computer or server. In the latter scenario, the remote computer may be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or the connection may be made to an external computer (for example, through the Internet using an Internet Service Provider).

0082The flowchart and block diagrams in the Figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments herein. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems that perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.

0083Deployment types include loading directly in the client, server, and proxy computers via loading a storage medium such as a CD, DVD, etc. The process software may also be automatically or semi-automatically deployed into a computer system by sending the process software to a central server or a group of central servers. The process software is then downloaded into the client computers that will execute the process software. The process software is sent directly to the client system via e-mail. The process software is then either detached to a directory or loaded into a directory by a button on the e-mail that executes a program that detaches the process software into a directory. Alternatively, the process software is sent directly to a directory on the client computer hard drive. When there are proxy servers, the process will select the proxy server code, determine on which computers to place the proxy servers' code, transmit the proxy server code, and then install the proxy server code on the proxy computer. The process software will be transmitted to the proxy server, and then stored on the proxy server.

0084While it is understood that the process software may be deployed by manually loading directly in the client, server, and proxy computers via loading a storage medium such as a CD, DVD, etc., the process software may also be automatically or semi-automatically deployed into a computer system by sending the process software to a central server or a group of central servers. The process software is then downloaded into the client computers that will execute the process software. Alternatively, the process software is sent directly to the client system via e-mail. The process software is then either detached to a directory or loaded into a directory by a button on the e-mail that executes a program that detaches the process software into a directory. Another alternative is to send the process software directly to a directory on the client computer hard drive. When there are proxy servers, the process will select the proxy server code, determine on which computers to place the proxy servers' code, transmit the proxy server code, and then install the proxy server code on the proxy computer. The process software will be transmitted to the proxy server, and then stored on the proxy server.

0085In <figref idref="DRAWINGS">FIG. 16</figref>, step <b>700</b> begins the deployment of the process software. The first thing is to determine if there are any programs that will reside on a server or servers when the process software is executed <b>701</b>. If this is the case, then the servers that will contain the executables are identified <b>809</b>. The process software for the server or servers is transferred directly to the servers' storage via FTP or some other protocol, or by copying through the use of a shared file system <b>810</b>. The process software is then installed on the servers <b>811</b>.

0086Next, a determination is made on whether the process software is to be deployed by having users access the process software on a server or servers <b>702</b>. If the users are to access the process software on servers, then the server addresses that will store the process software are identified <b>703</b>.

0087A determination is made if a proxy server is to be built <b>800</b> to store the process software. A proxy server is a server that sits between a client application, such as a Web browser, and a real server. It intercepts all requests to the real server to see if it can fulfill the requests itself. If not, it forwards the request to the real server. The two primary benefits of a proxy server are to improve performance and to filter requests. If a proxy server is required, then the proxy server is installed <b>801</b>. The process software is sent to the servers either via a protocol such as FTP or it is copied directly from the source files to the server files via file sharing <b>802</b>. Another embodiment would be to send a transaction to the servers that contain the process software and have the server process the transaction, then receive and copy the process software to the server's file system. Once the process software is stored at the servers, the users, via their client computers, then access the process software on the servers and copy it to their client computers file systems <b>803</b>. Another embodiment is to have the servers automatically copy the process software to each client and then run the installation program for the process software at each client computer. The users execute the program that installs the process software on their client computer <b>812</b>, and then exit the process <b>708</b>.

0088In step <b>704</b>, a determination is made whether the process software is to be deployed by sending the process software to users via e-mail. The set of users where the process software will be deployed are identified together with the addresses of the user client computers <b>705</b>. The process software is sent via e-mail <b>804</b> to each of the users' client computers. The users receive the e-mail <b>805</b> and then detach the process software from the e-mail to a directory on their client computers <b>806</b>. The users execute the program that installs the process software on their client computer <b>812</b>, and then exit the process <b>708</b>.

0089Lastly, a determination is made on whether to the process software will be sent directly to user directories on their client computers <b>706</b>. If so, the user directories are identified <b>707</b>. The process software is transferred directly to the users' client computer directory <b>807</b>. This can be done in several ways such as but not limited to sharing of the file system directories and then copying from the sender's file system to the recipient users' file system or alternatively using a transfer protocol such as File Transfer Protocol (FTP). The users access the directories on their client file systems in preparation for installing the process software <b>808</b>. The users execute the program that installs the process software on their client computer <b>812</b>, and then exit the process <b>708</b>.

0090The process software is integrated into a client, server, and network environment by providing for the process software to coexist with applications, operating systems, and network operating systems software, and then installing the process software on the clients and servers in the environment where the process software will function.

0091The first step is to identify any software on the clients and servers including the network operating system where the process software will be deployed that are required by the process software or that work in conjunction with the process software. This includes the network operating system that is software that enhances a basic operating system by adding networking features.

0092Next, the software applications and version numbers will be identified and compared to the list of software applications and version numbers that have been tested to work with the process software. Those software applications that are missing or that do not match the correct version will be upgraded with the correct version numbers. Program instructions that pass parameters from the process software to the software applications will be checked to ensure the parameter lists match the parameter lists required by the process software. Conversely, parameters passed by the software applications to the process software will be checked to ensure the parameters match the parameters required by the process software. The client and server operating systems including the network operating systems will be identified and compared to the list of operating systems, version numbers, and network software that have been tested to work with the process software. Those operating systems, version numbers, and network software that do not match the list of tested operating systems and version numbers will be upgraded on the clients and servers to the required level.

0093After ensuring that the software, where the process software is to be deployed, is at the correct version level that has been tested to work with the process software, the integration is completed by installing the process software on the clients and servers.

0094In <figref idref="DRAWINGS">FIG. 17</figref>, step <b>820</b> begins the integration of the process software. The first thing is to determine if there are any process software programs that will execute on a server or servers <b>821</b>. If this is not the case, then integration proceeds to <b>827</b>. If this is the case, then the server addresses are identified <b>822</b>. The servers are checked to see if they contain software that includes the operating system (OS), applications, and network operating systems (NOS), together with their version numbers, that have been tested with the process software <b>823</b>. The servers are also checked to determine if there is any missing software that is required by the process software <b>823</b>.

0095A determination is made if the version numbers match the version numbers of OS, applications, and NOS that have been tested with the process software <b>824</b>. If all of the versions match and there is no missing required software, the integration continues in <b>827</b>.

0096If one or more of the version numbers do not match, then the unmatched versions are updated on the server or servers with the correct versions <b>825</b>. Additionally, if there is missing required software, then it is updated on the server or servers <b>825</b>. The server integration is completed by installing the process software <b>826</b>.

0097Step <b>827</b>, which follows either step <b>821</b>, <b>824</b>, or <b>826</b>, determines if there are any programs of the process software that will execute on the clients. If no process software programs execute on the clients, the integration proceeds to <b>830</b> and exits. If this not the case, then the client addresses are identified <b>828</b>.

0098The clients are checked to see if they contain software that includes the operating system (OS), applications, and network operating systems (NOS), together with their version numbers, that have been tested with the process software <b>829</b>. The clients are also checked to determine if there is any missing software that is required by the process software <b>829</b>.

0099A determination is made as to whether the version numbers match the version numbers of OS, applications, and NOS that have been tested with the process software <b>831</b>. If all of the versions match and there is no missing required software, then the integration proceeds to <b>830</b> and exits.

0100If one or more of the version numbers do not match, then the unmatched versions are updated on the clients with the correct versions <b>832</b>. In addition, if there is missing required software then it is updated on the clients <b>832</b>. The client integration is completed by installing the process software on the clients <b>833</b>. The integration proceeds to <b>830</b> and exits.

0101The process software can be stored on a shared file system accessible from one or more servers. The process software is executed via transactions that contain data and server processing requests that use CPU units on the accessed server. CPU units are units of time such as minutes, seconds, hours on the central processor of the server. Additionally, the assessed server may make requests of other servers that require CPU units. CPU units are an example that represents one measurement of use. Other measurements of use include but are not limited to network bandwidth, memory usage, storage usage, packet transfers, complete transactions etc. When multiple customers use the same process software application, their transactions are differentiated by the parameters included in the transactions that identify the unique customer and the type of service for that customer. All of the CPU units and other measurements of use that are used for the services for each customer are recorded. When the number of transactions to any one server reaches a number that begins to affect the performance of that server, other servers are accessed to increase the capacity and to share the workload. Likewise, when other measurements of use such as network bandwidth, memory usage, storage usage, etc. approach a capacity so as to affect performance, additional network bandwidth, memory usage, storage etc. are added to share the workload. The measurements of use used for each service and customer are sent to a collecting server that sums the measurements of use for each customer for each service that was processed anywhere in the network of servers that provide the shared execution of the process software. The summed measurements of use units are periodically multiplied by unit costs and the resulting total process software application service costs are alternatively sent to the customer and/or indicated on a web site accessed by the customer, which then remits payment to the service provider. In another embodiment, the service provider requests payment directly from a customer account at a banking or financial institution. In another embodiment, if the service provider is also a customer of the customer that uses the process software application, the payment owed to the service provider is reconciled to the payment owed by the service provider to minimize the transfer of payments.

0102The process software is shared, simultaneously serving multiple customers in a flexible, automated fashion. It is standardized, requiring little customization, and it is scalable, providing capacity on demand in a pay-as-you-go model.

0103The process software can be stored on a shared file system accessible from one or more servers. The process software is executed via transactions that contain data and server processing requests that use CPU units on the accessed server. CPU units are units of time such as minutes, seconds, hours on the central processor of the server. Additionally, the assessed server may make requests of other servers that require CPU units. CPU units are an example that represents one measurement of use. Other measurements of use include but are not limited to network bandwidth, memory usage, storage usage, packet transfers, complete transactions etc.

0104When multiple customers use the same process software application, their transactions are differentiated by the parameters included in the transactions that identify the unique customer and the type of service for that customer. All of the CPU units and other measurements of use that are used for the services for each customer are recorded. When the number of transactions to any one server reaches a number that begins to affect the performance of that server, other servers are accessed to increase the capacity and to share the workload. Likewise, when other measurements of use such as network bandwidth, memory usage, storage usage, etc. approach a capacity so as to affect performance, additional network bandwidth, memory usage, storage etc. are added to share the workload.

0105The measurements of use used for each service and customer are sent to a collecting server that sums the measurements of use for each customer for each service that was processed anywhere in the network of servers that provide the shared execution of the process software. The summed measurements of use units are periodically multiplied by unit costs and the resulting total process software application service costs are alternatively sent to the customer and/or indicated on a web site accessed by the customer, which then remits payment to the service provider.

0106In another embodiment, the service provider requests payment directly from a customer account at a banking or financial institution.

0107In another embodiment, if the service provider is also a customer of the customer that uses the process software application, the payment owed to the service provider is reconciled to the payment owed by the service provider to minimize the transfer of payments.

0108In <figref idref="DRAWINGS">FIG. 18</figref>, step <b>840</b> begins the On Demand process. A transaction is created that contains the unique customer identification, the requested service type, and any service parameters that further specify the type of service <b>841</b>. The transaction is then sent to the main server <b>842</b>. In an On Demand environment, the main server can initially be the only server, then, as capacity is consumed, other servers are added to the On Demand environment.

0109The server central processing unit (CPU) capacities in the On Demand environment are queried <b>843</b>. The CPU requirement of the transaction is estimated, then the servers' available CPU capacity in the On Demand environment are compared to the transaction CPU requirement to see if there is sufficient CPU capacity available in any server to process the transaction <b>844</b>. If there is not sufficient server CPU capacity available, then additional server CPU capacity is allocated to process the transaction <b>848</b>. If there was already sufficient CPU capacity available, then the transaction is sent to a selected server <b>845</b>.

0110Before executing the transaction, a check is made of the remaining On Demand environment to determine if the environment has sufficient available capacity for processing the transaction. This environment capacity consists of such things as, but not limited to, network bandwidth, processor memory, storage etc. <b>846</b>. If there is not sufficient available capacity, then capacity will be added to the On Demand environment <b>847</b>. Next, the required software to process the transaction is accessed, loaded into memory, then the transaction is executed <b>849</b>.

0111The usage measurements are recorded <b>850</b>. The usage measurements consist of the portions of those functions in the On Demand environment that are used to process the transaction. The usage of such functions as, but not limited to, network bandwidth, processor memory, storage and CPU cycles are what is recorded. The usage measurements are summed, multiplied by unit costs, and then recorded as a charge to the requesting customer <b>851</b>. If the customer has requested that the On Demand costs be posted to a web site <b>852</b>, then they are posted <b>853</b>.

0112If the customer has requested that the On Demand costs be sent via e-mail to a customer address <b>854</b>, then they are sent <b>855</b>. If the customer has requested that the On Demand costs be paid directly from a customer account <b>856</b>, then payment is received directly from the customer account <b>857</b>. The last step is to exit the On Demand process <b>858</b>.

0113The process software may be deployed, accessed and executed through the use of a virtual private network (VPN), which is any combination of technologies that can be used to secure a connection through an otherwise unsecured or untrusted network. The use of VPNs is to improve security and for reduced operational costs. The VPN makes use of a public network, usually the Internet, to connect remote sites or users together. Instead of using a dedicated, real-world connection such as leased line, the VPN uses “virtual” connections routed through the Internet from the company's private network to the remote site or employee.

0114The process software may be deployed, accessed, and executed through either a remote-access or a site-to-site VPN. When using the remote-access VPNs, the process software is deployed, accessed, and executed via the secure, encrypted connections between a company's private network and remote users through a third-party service provider. The enterprise service provider (ESP) sets a network access server (NAS) and provides the remote users with desktop client software for their computers. The telecommuters can then dial a toll-free number or attach directly via a cable or DSL modem to reach the NAS and use their VPN client software to access the corporate network and to access, download, and execute the process software.

0115When using the site-to-site VPN, the process software is deployed, accessed, and executed through the use of dedicated equipment and large-scale encryption, which are used to connect a company's multiple fixed sites over a public network, such as the Internet.

0116The process software is transported over the VPN via tunneling, which is the process of placing an entire packet within another packet and sending it over a network. The protocol of the outer packet is understood by the network and both points, called tunnel interfaces, where the packet enters and exits the network.

0117In <figref idref="DRAWINGS">FIGS. 19 and 20</figref>, step <b>860</b> begins the Virtual Private Network (VPN) process. A determination is made to see if a VPN for remote access is required <b>861</b>. If it is not required, then proceed to <b>862</b>. If it is required, then determine if the remote access VPN exists <b>864</b>.

0118If it does exist, then proceed to <b>865</b>. Otherwise, identify the third party provider that will provide the secure, encrypted connections between the company's private network and the company's remote users <b>876</b>. The company's remote users are identified <b>877</b>. The third party provider then sets up a network access server (NAS) <b>878</b> that allows the remote users to dial a toll-free number or attach directly via a cable or DSL modem to access, download, and install the desktop client software for the remote-access VPN <b>879</b>.

0119After the remote access VPN has been built, or if it been previously installed, the remote users can then access the process software by dialing into the NAS or attaching directly via a cable or DSL modem into the NAS <b>865</b>. This allows entry into the corporate network where the process software is accessed <b>866</b>. The process software is transported to the remote users' desktop over the network via tunneling. That is, the process software is divided into packets and each packet, including the data and protocol, is placed within another packet <b>867</b>. When the process software arrives at the remote users' desktop, it is removed from the packets, reconstituted, and executed on the remote users' desktop <b>868</b>.

0120A determination is made to see if a VPN for site-to-site access is required <b>862</b>. If it is not required, then proceed to exit the process <b>863</b>. Otherwise, determine if the site-to-site VPN exists <b>869</b>. If it does exist, then proceed to <b>872</b>. Otherwise, install the dedicated equipment required to establish a site-to-site VPN <b>870</b>. Then build the large-scale encryption into the VPN <b>871</b>.

0121After the site-to-site VPN has been built, or if it had been previously established, the users access the process software via the VPN <b>872</b>. The process software is transported to the site users over the network via tunneling <b>873</b>. That is, the process software is divided into packets and each packet, including the data and protocol, is placed within another packet <b>874</b>. When the process software arrives at the remote users' desktop, it is removed from the packets, reconstituted, and executed on the site users' desktop <b>875</b>. Proceed to exit the process <b>863</b>.

0122The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of this disclosure. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

0123In addition, terms such as “right”, “left”, “vertical”, “horizontal”, “top”, “bottom”, “upper”, “lower”, “under”, “below”, “underlying”, “over”, “overlying”, “parallel”, “perpendicular”, etc., used herein are understood to be relative locations as they are oriented and illustrated in the drawings (unless otherwise indicated). Terms such as “touching”, “on”, “in direct contact”, “abutting”, “directly adjacent to”, etc., mean that at least one element physically contacts another element (without other elements separating the described elements).

0124The corresponding structures, materials, acts, and equivalents of all means or step plus function elements in the claims below are intended to include any structure, material, or act for performing the function in combination with other claimed elements as specifically claimed. The descriptions of the various embodiments of the present invention have been presented for purposes of illustration, but are not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiments, the practical application or technical improvement over technologies found in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.