Gate drive circuit of the voltage drive type semiconductor element and power converter

BACKGROUND OF THE INVENTION

p-0002This invention relates to a gate drive circuit used for the voltage-driven semiconductor elements used in a power converter and to a power converting apparatus.

p-0003In a power converting apparatus such as an inverter or a converter which uses switching elements of voltage-driven type including insulated gate bipolar transistors (IGBTs) or power MOSFETs, electric energy is transferred from the input side to the output side by supplying and interrupting the voltage applied between the emitter and the gate of each switching element, e.g. IGBT. When the switching element is turned on or off, switching loss is incurred. This switching loss can be reduced by enhancing the gating drive efficiency and switching over between the conductive and cut-off states of the switching element swiftly. On the other hand, if the collector voltage of the IGBT (in the cut-off state) rises steeply due to the swift switching of the IGBT, the gate-emitter capacitance Cge is charged through the gate-collector capacitance Cgc. Consequently, the gate voltage is elevated, and if it exceeds a threshold, the IGBT fires erroneously. In order to reduce the switching loss due to the increase in switching speed and to prevent erroneous firing, a negative voltage is usually applied to the gate of the IGBT so as to prevent the gate voltage from rising due to the swift withdrawal of gate charges and the increase in the time rate of change dv/dt of the collector voltage.

p-0004JP-A-2009-21823 discloses a gate drive circuit which can apply a negative voltage to the gate of a semiconductor element by using a single power supply. The circuit configuration of the gate drive circuit, as shown in <figref idrefs="DRAWINGS">FIG. 1</figref> attached to the disclosure, comprises a DC power supply Vdd, five switches SW<b>1</b>˜SW<b>5</b>, and a capacitor Cin. One terminal of the switch SW<b>1</b> is connected with the positive terminal of the power supply Vdd; the switch SW<b>2</b> is connected between the other terminal of the switch SW<b>1</b> and the negative terminal of the power supply Vdd; one terminal of the switch SW<b>3</b> is connected with the positive terminal of the power supply Vdd; the switch SW<b>4</b> is connected between the other terminal of the switch SW<b>3</b> and the switch SW<b>5</b>; the switch SW<b>5</b> is connected between the other terminal of the switch SW<b>4</b> and the negative terminal of the power supply Vdd; the capacitor Cin is connected between the other terminal of the switch SW<b>1</b> and the other terminal of the switch SW<b>4</b>; the other terminal of the switch SW<b>3</b> is connected with the gate of the power MOSFET; and the source of the power MOSFET is connected with the negative terminal of the power supply Vdd.

p-0005The operation of this circuit is described below. With SW<b>1</b>, SW<b>3</b> and SW<b>5</b> closed and with SW<b>2</b> and SW <b>4</b> open, the gate voltage of the power MOSFET is elevated up to Vdd via SW<b>3</b>. On the other hand, the capacitor Cin is charged up to Vdd through a path consisting of SW<b>1</b>, Cin and SW<b>5</b>. Then, when SW<b>1</b>, SW<b>3</b> and SW<b>5</b> are opened and when SW<b>2</b> and SW<b>4</b> are closed, the gate of the power MOSFET is kept at a negative voltage (−Vdd) through a path consisting of SW<b>4</b>, Cin and SW<b>2</b>. In this way, a positive voltage and a negative voltage are applied in turn so that high speed turn-off can be effectuated and that erroneous firing can be prevented.

p-0006JP-A-2007-336694 discloses a gate drive circuit which can apply a negative voltage to the gate of an insulated gate type semiconductor device by using a single DC power source. The circuit configuration of the gate drive circuit, as shown in <figref idrefs="DRAWINGS">FIG. 1</figref> attached to the disclosure, is as follows. A series circuit of transistors Q<b>1</b> and Q<b>2</b> is connected between the positive and negative electrodes of the DC power source VD; one end of a parallel circuit of a resistor R<b>1</b> and a capacitor C<b>1</b> is connected to the junction point of the transistors Q<b>1</b> and Q<b>2</b>; one end of a gate resistor RG is connected to the other end of the parallel circuit; and the other end of the gate resistor RG is connected with the gate of the insulated gate type semiconductor element. A series circuit of a zener diode ZD<b>1</b> and a reverse-flow preventing diode D<b>1</b> is connected between the gate and the emitter of the insulated gate type semiconductor element PT. The operation of this circuit is as follows. When Q<b>1</b> is turned on and Q<b>2</b> is turned off, C<b>1</b> functions as a differentiating circuit immediately after the turn-on of Q<b>1</b>. Accordingly, spike current flows through a path consisting of C<b>1</b>, RG and the gate-emitter capacitance of PT. A voltage clamped by ZD<b>1</b> is applied to the gate of PT. While PT is conductive, the clamped voltage is equal to VD−VC<b>1</b>, VC<b>1</b> being the voltage developed across C<b>1</b>. Then, when Q<b>1</b> is turned off and Q<b>2</b> is turned on, C<b>1</b> is charged to develop a voltage of VD−Vz. As a result, a negative voltage is applied to the gate of PT. Hence, high speed turn-off can be effectuated and turn-off loss can also be reduced.

SUMMARY OF THE INVENTION

p-0007However, with the gate drive circuit disclosed in JP-A-2009-21823, since the negative gate voltage becomes equal to −Vdd, the turn-on of the insulated gate semiconductor element is retarded. This leads to a problem that the turn-on loss increases. Also, in the case where a SiC-JFET is used which has different gate withstand voltages depending on whether the applied gate voltage is positive or negative, the gate drive circuit as disclose in JP-A-2009-21823 cannot be used. This is another problem inherent with this gate drive circuit.

p-0008In JP-A-2007-336694, there is proposed a means for applying a negative voltage whose absolute value is smaller than Vdd, to the gate of a semiconductor element. However, since the gate voltage applied at turn-on instant becomes lower than Vdd, a problem still arises that the turn-on resistance increases and the conduction loss also increases.

p-0009The object of this invention, which has been made to solve the above mentioned problems, is to provide a gate drive circuit which can apply a negative voltage between the gate and the emitter of a semiconductor element by using a simple circuit configuration, whereby switching loss can be reduced and also erroneous firing can be prevented.

p-0010In order to solve the above mentioned problems, there is provided, according to a first embodiment of this invention, a gate drive circuit for driving the voltage-driven semiconductor elements used in a power converter or a voltage-driven semiconductor element, comprising a gate power source; a push-pull circuit consisting of a NPN transistor and a first PNP transistor connected in series; a series circuit of the push-pull circuit and a diode connected between the positive and negative electrodes of the gate power source; a negative voltage generating circuit connected between the positive electrode of the gate power source and a connecting point of the push-pull circuit (<b>10</b>) and the diode; and a second PNP transistor connected between the output terminal of the negative voltage generating circuit and the negative electrode of the gate power source, wherein the junction point of the NPN transistor and the first PNP transistor is connected with the gate terminal of the voltage-driven semiconductor element via a gate resistor; and the emitter terminal of the voltage-driven semiconductor element is connected with the negative electrode of the gate power source.

p-0011According to a second embodiment of this invention, there is provided a power converting apparatus comprising an AC power source; a rectifying circuit for rectifying the output of the AC power source; a converter for converting the output of the rectifying circuit to DC voltage; a first gate drive circuit for driving the converter; an inverter for inverting the output of the converter to AC voltage; a second gate drive circuit for driving the inverter; and a load for receiving the output of the inverter, wherein each of the first and second gate drive circuits has the same circuit configuration as that of the gate drive circuit according to the first embodiment described above.

p-0012According to this invention, since the gate of the voltage-driven semiconductor element can be maintained at a negative voltage whose absolute value is smaller than the voltage of a single DC power source used in the gate drive circuit, the swift switching of the voltage-driven semiconductor element can be effectuated and also the erroneous firing of the voltage-driven semiconductor element can be prevented, without increasing the cost and size of and the loss in, the gate drive circuit.

p-0013Other objects, features and advantages of the invention will become apparent from the following description of the embodiments of the invention taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

p-0014<figref idrefs="DRAWINGS">FIG. 1</figref> is a circuit configuration of a gate drive circuit as the first embodiment of this invention;

p-0015<figref idrefs="DRAWINGS">FIG. 2</figref> is a circuit configuration of a gate drive circuit as the second embodiment of this invention;

p-0016<figref idrefs="DRAWINGS">FIG. 3</figref> is a circuit configuration of a gate drive circuit as the third embodiment of this invention;

p-0017<figref idrefs="DRAWINGS">FIG. 4</figref> shows in block diagram the circuit of a power conversion apparatus as the fourth embodiment of this invention;

p-0018<figref idrefs="DRAWINGS">FIG. 5</figref> illustrates a method of controlling a converter used in the fourth embodiment of this invention and the waveforms relating to the operation of the converter;

p-0019<figref idrefs="DRAWINGS">FIG. 6</figref> is the circuit configuration of a converter as the fifth embodiment of this invention;

p-0020<figref idrefs="DRAWINGS">FIG. 7</figref> shows operating waveforms observed in relation to the turn-off operations of an IGBT driven by a conventional gate drive circuit;

p-0021<figref idrefs="DRAWINGS">FIG. 8</figref> shows operating waveforms observed in relation to the turn-off operations of an IGBT driven by a gate drive circuit according to the fifth embodiment of this invention;

p-0022<figref idrefs="DRAWINGS">FIG. 9</figref> graphically shows the dependence of the turn-off loss on the gate voltage, regarding the gate drive circuit as the fifth embodiment of this invention;

p-0023<figref idrefs="DRAWINGS">FIG. 10</figref> graphically shows the dependence of the turn-on loss on the gate voltage, regarding the gate drive circuit as the fifth embodiment of this invention;

p-0024<figref idrefs="DRAWINGS">FIG. 11</figref> shows the first modification of the converter used in the gate drive circuit as the fifth embodiment of this invention;

p-0025<figref idrefs="DRAWINGS">FIG. 12</figref> shows the second modification of the converter used in the gate drive circuit as the fifth embodiment of this invention;

p-0026<figref idrefs="DRAWINGS">FIG. 13</figref> shows the third modification of the converter used in the gate drive circuit as the fifth embodiment of this invention;

p-0027<figref idrefs="DRAWINGS">FIG. 14</figref> is the circuit configuration of an inverter as the sixth embodiment of this invention;

p-0028<figref idrefs="DRAWINGS">FIG. 15</figref> shows operating waveforms observed in relation to the inverter as the sixth embodiment of this invention;

p-0029<figref idrefs="DRAWINGS">FIG. 16</figref> shows operating waveforms observed in relation to the turn-off operations of an IGBT driven by a conventional gate drive circuit;

p-0030<figref idrefs="DRAWINGS">FIG. 17</figref> shows operating waveforms observed in relation to the turn-off operations of an IGBT driven by a gate drive circuit according to the sixth embodiment of this invention;

p-0031<figref idrefs="DRAWINGS">FIG. 18</figref> is the first modification of the inverter as the sixth embodiment of this invention;

p-0032<figref idrefs="DRAWINGS">FIG. 19</figref> is the second modification of the inverter as the sixth embodiment of this invention;

p-0033<figref idrefs="DRAWINGS">FIG. 20</figref> is the third modification of the inverter as the sixth embodiment of this invention;

p-0034<figref idrefs="DRAWINGS">FIG. 21</figref> is the circuit configuration of an inverter as the seventh embodiment of this invention;

p-0035<figref idrefs="DRAWINGS">FIG. 22</figref> illustrates a method of controlling an inverter used in the seventh embodiment of this invention and the waveforms relating to the operation of the inverter;

p-0036<figref idrefs="DRAWINGS">FIG. 23</figref> shows operating waveforms observed in relation to the turn-off operations of an IGBT driven by a conventional gate drive circuit; and

p-0037<figref idrefs="DRAWINGS">FIG. 24</figref> shows operating waveforms observed in relation to the turn-off operations of an IGBT driven by a gate drive circuit according to the seventh embodiment of this invention.

DESCRIPTION OF THE EMBODIMENTS

p-0038Embodiments of this invention will be described below with reference to the attached drawings.

Embodiment 1

p-0039A gate drive circuit as the first embodiment of this invention will be described with reference to <figref idrefs="DRAWINGS">FIG. 1</figref>.

p-0040In <figref idrefs="DRAWINGS">FIG. 1</figref>, reference numeral <b>1</b> designates a gate power source; <b>10</b> a push-pull circuit provided at the output stage of a gate drive circuit, consisting of an NPN transistor <b>2</b> and a PNP transistor <b>3</b>; <b>4</b> a PNP transistor; <b>5</b> a diode; <b>6</b> a negative voltage generating circuit; <b>7</b> an IGBT; <b>8</b> a freewheeling diode; and <b>9</b> a gate resistor.

p-0041Now, the interconnection among the circuit components will be described. The positive electrode of the gate power source <b>1</b> is connected with the Vin terminal of the negative voltage generating circuit <b>6</b> and the collector terminal of the NPN transistor <b>2</b> of the push-pull circuit <b>10</b>. The emitter terminal of the NPN transistor <b>2</b> is connected with the emitter terminal of the PNP transistor <b>3</b>. The collector terminal of the PNP transistor <b>3</b> is connected with the anode of the diode <b>5</b> and the E terminal (a common reference terminal) of the negative voltage generating circuit <b>6</b>. The junction point Vo between the NPN transistor <b>2</b> and the PNP transistor <b>3</b> is connected with the gate terminal of the IGBT <b>7</b> via the gate resistor <b>9</b>. The emitter terminal of the PNP transistor <b>4</b> is connected with the Vout terminal of the negative voltage generating circuit <b>6</b>. The base terminals of the transistors <b>2</b>, <b>3</b> and <b>4</b> are all connected with a drive signal input terminal S. The collector terminal of the PNP transistor <b>4</b>, the cathode of the diode <b>5</b>, and the emitter terminal of the IGBT <b>7</b> are all connected with the negative electrode of the gate power source <b>1</b>.

p-0042Next, the operation of this gate drive circuit will be described. When a turn-on signal is applied to the drive signal input terminal S (hereafter referred to as S terminal), the NPN transistor <b>2</b> is turned on while the PNP transistors <b>3</b> and <b>4</b> remain turned off. Then, current flows from the gate power source <b>1</b> to the gate capacitance of the IGBT <b>7</b> via the NPN transistor <b>2</b> and the gate resistor <b>9</b>. Consequently, the voltage at the gate terminal of the IGBT <b>7</b> rises.

p-0043On the other hand, if a turn-off signal is applied to the S terminal, the NPN transistor <b>2</b> is turned off and the PNP transistors <b>3</b> and <b>4</b> are turned on. As a result, current flows through a path consisting of the gate capacitance of the IGBT <b>7</b>, the gate resistor <b>9</b>, the PNP transistor <b>3</b>, the negative voltage generating circuit <b>6</b>, and the PNP transistor <b>4</b>. Therefore, the negative voltage generating circuit <b>6</b> causes a negative voltage to be applied between the gate and emitter terminals of the IGBT <b>7</b> so that the gate capacitance of the IGBT <b>7</b> is swiftly discharged. This enables the IGBT <b>7</b> to turn off swiftly. It should be noted here that the negative voltage generating circuit <b>6</b> can be easily realized by using a three-terminal voltage regulator. Available are various three-terminal voltage regulators having different output voltages, and a suitable one may be selected depending on the desired negative voltage.

p-0044In the first embodiment described above, NPN and PNP transistors are used to constitute a gate drive circuit, but it is needless to say that MOSFETs can be used for the same purpose and effect. In other words, the PNP transistors may be substituted by p-type MOSFETs, and the NPN transistor by a n-type MOSFET. MOSFETs are voltage-driven type transistors and therefore their driving powers can be smaller than those of PNP and NPN transistors. Also, the switching speeds of the MOSFETs are very fast and therefore suitable for high frequency application.

Embodiment 2

p-0045The second embodiment of this invention will be described with reference to <figref idrefs="DRAWINGS">FIG. 2</figref>. In <figref idrefs="DRAWINGS">FIG. 2</figref>, circuit constituents equivalent to those shown in <figref idrefs="DRAWINGS">FIG. 1</figref> are designated by like reference numerals, and duplicate explanation is omitted in the specification. The second embodiment differs from the first embodiment in that the negative voltage generating circuit <b>6</b> is made up of a resistors <b>11</b> and <b>12</b>, and a capacitor <b>13</b>.

p-0046The operation of the gate drive circuit as the second embodiment of this invention will be described below. When the IGBT <b>7</b> is turned on, the ensuing operation is the same with the first embodiment described above and therefore the description of operation is omitted. The capacitor <b>13</b> is charged in the following way: when a turn-on signal is applied to the S terminal, the PNP transistors <b>3</b> and <b>4</b> remain cut off; the voltage from the gate power source <b>1</b> is applied to the gate terminal of the IGBT <b>7</b> via the NPN transistor <b>2</b> while current flows through a path consisting of the resistors <b>11</b> and <b>12</b> and a path consisting of the resistor <b>11</b>, the capacitor <b>13</b> and the diode <b>5</b>; and the capacitor is charged to developed across it a voltage Vc₁₃equal to the voltage Vr₁₂obtained by dividing the voltage of the gate power source <b>1</b> in accordance with the resistance ratio of the resistors <b>11</b> and <b>12</b>, minus the forward voltage drop VF of the diode <b>5</b>, that is, Vc₁₃=Vr₁₂−VF.

p-0047The values of the resistors <b>11</b> and <b>12</b>, and the capacitor <b>13</b> are selected in the following way. The capacitance of the capacitor <b>13</b> must be chosen sufficiently larger than the gate-emitter capacitance of the IGBT <b>7</b>. No problem will arise if the former is about 10 times as large as the latter. As to the value of the resistor <b>11</b>, it must be selected on the basis of the capacitance of the capacitor <b>13</b> and the conduction time (i.e. turn-on time) of the IGBT <b>7</b>. In fact, since the value of the resistor <b>11</b> is determined depending on the CR time constant related to the resistor <b>11</b> and the capacitor <b>13</b>, this embodiment is suitable for the operation in which the conduction time of the IGBT <b>7</b> does not fluctuate so much. The value of the resistor <b>12</b> is determined so that the difference VF between the divided voltage obtained due to the resistors <b>11</b> and <b>12</b>, and the forward voltage drop of the diode <b>5</b> can charge the capacitor <b>13</b> to develop a required negative voltage.

Embodiment 3

p-0048The third embodiment of this invention will now be described with reference to <figref idrefs="DRAWINGS">FIG. 3</figref>. In <figref idrefs="DRAWINGS">FIG. 3</figref>, circuit components equivalent to those shown in <figref idrefs="DRAWINGS">FIG. 2</figref> are designated by like reference numerals, and duplicate explanation is omitted in the specification. The third embodiment differs from the second embodiment in that a zener diode <b>14</b> is substituted for the resistor <b>11</b>. In fact, a series circuit of the zener diode <b>14</b> and the resistor <b>12</b> is connected across the gate power source <b>1</b>, and the junction point between the zener diode <b>14</b> and the resistor <b>12</b> is connected with the capacitor <b>13</b> and the emitter terminal of the PNP transistor <b>4</b>.

p-0049In this embodiment, the above-mentioned negative voltage is equal to the voltage of the gate power source <b>1</b> minus the zener breakdown voltage of the zener diode <b>14</b> and the forward voltage drop VF of the diode <b>5</b>. Since the forward voltage drop VF of the diode <b>5</b> is usually 0.6 V, the value of the negative voltage can be arbitrarily selected by using a zener diode having a desired breakdown voltage. When the zener diode <b>14</b> breaks down, current flows instantaneously so that the capacitor <b>13</b> can be charged swiftly. Accordingly, with this gate drive circuit, a negative voltage for turn-off can be supplied to the IGBT <b>7</b> even in the operation in which the conduction time of the IGBT <b>7</b> fluctuates. As to the capacitance of the capacitor <b>13</b>, the same is true of the second embodiment described above.

Embodiment 4

p-0050The fourth embodiment of this invention will now be described with reference to <figref idrefs="DRAWINGS">FIG. 4</figref>. <figref idrefs="DRAWINGS">FIG. 4</figref> shows in block diagram the circuit of a power conversion apparatus. The power conversion apparatus rectifies the voltage supplied from the commercial AC source <b>20</b> by means of a rectifying circuit <b>21</b> and then changes the rectified voltage to a DC voltage by means of a converter <b>22</b>. Further, the output voltage of the converter <b>22</b> is changed into alternating current by means of an inverter <b>23</b>, and the alternating current is fed to a load <b>24</b>.

p-0051Description is made of the converter <b>22</b>. Known is the method of controlling converters called “power factor correction control (PFC control)”. In general, power conversion apparatuses for which the commercial power system supplies power, use the PFC control to suppress the current of higher harmonics and to prevent the operation failures of related machines and devices, the burnout of power facility, and the generation of noise.

p-0052Description is made of the detection circuits and the control circuits which the PFC control requires. In order to measure the power supplied from the commercial power source <b>20</b>, the AC current flowing out of the commercial power source <b>20</b> must be detected. In this embodiment, the AC current flowing out of the commercial power source <b>20</b> is first changed into a voltage by a current sensor <b>100</b>, and then the voltage is detected by an AC current detection circuit <b>101</b>. Alternatively, the current flowing into the converter <b>22</b> may first be changed into a voltage by a current sensor <b>126</b>, and then the voltage may be detected by an input current detection circuit <b>103</b>. In order to measure the power supplied to the load <b>24</b>, the current flowing into the load must be detected. For this purpose, the load current is changed into a voltage by a current sensor <b>127</b>, and the voltage is detected by a load current detection circuit <b>105</b>.

p-0053In the control in which power factor is improved by shaping the sinusoidal current whose phase is in synchronism with that of the voltage of the commercial power source <b>20</b>, the output voltage of the rectifying circuit <b>21</b>, i.e. rectified DC voltage serving as the reference signal for the AC current waveform, is detected by an input voltage detection circuit <b>102</b>. Further, in order to control the output voltage so that it can become constant, the voltage Ve across the output terminals of the converter <b>22</b> that serves as a step-up circuit, is detected by a DC voltage detection circuit <b>104</b>. It is noted here that in order to reduce the number of circuit components, the input voltage detection circuit <b>102</b> may be omitted, and instead a reference signal that can be substituted for the input voltage may be obtained so that the waveform of the AC current flowing out of the commercial power source <b>20</b> is shaped.

p-0054Then, description is made of the control according to this embodiment. Here is performed the PFC control in which the waveform of the input current is shaped into that of sinusoidal current in accordance with the voltage of the commercial power source <b>20</b> so that the input voltage waveform can be in synchronism with the sinusoidal current waveform. The PFC control is described in detail below with reference to <figref idrefs="DRAWINGS">FIG. 5</figref>.

p-0055<figref idrefs="DRAWINGS">FIG. 5</figref> graphically shows the voltage waveform Vac and the current waveform Iac of the commercial AC power source <b>20</b> during one period; and the waveforms of the output voltage Ve of the converter <b>22</b>, the detected value of the input voltage, the detected value of the output voltage, the detected value of the input current, the current command value and the triangular wave, and the control signal, all associated with the converter <b>22</b>.

p-0056First, as shown in <figref idrefs="DRAWINGS">FIG. 5</figref>, the output voltage Ve is set higher than the peak value of the voltage waveform Vac.

p-0057Then, description is made of how the current command value is generated. The detected value of the input voltage is multiplied by the detected value of the output voltage. The difference between the result of the multiplication and the detected value of the input current is amplified to generate the current command value. The control signal is generated by comparing the current command value with the triangular wave. In other words, when the current command value is larger than the triangular wave, the control signal is rendered off, whereas the control signal is rendered on when the current command value is smaller than the triangular wave. This control signal is delivered via the gate drive circuit <b>108</b> and drives the converter <b>22</b>.

p-0058By using such a gate drive circuit described in one of the embodiments 1 through 3 for the gate drive circuit <b>108</b> for this PFC control circuit (converter <b>22</b> in <figref idrefs="DRAWINGS">FIG. 4</figref>), switching speed can be increased so that the switching loss can be reduced and that the erroneous firing of switching elements can be prevented.

Embodiment 5

p-0059The fifth embodiment of this invention will now be described with reference to <figref idrefs="DRAWINGS">FIG. 6</figref>. <figref idrefs="DRAWINGS">FIG. 6</figref> shows a concrete example of the circuit of the converter <b>22</b> described above in the fourth embodiment. This converter <b>22</b> uses a chopper circuit, including a choke coil <b>25</b>, an IGBT <b>26</b>, a diode <b>27</b> and a smoothing capacitor <b>28</b>.

p-0060The circuit configuration in <figref idrefs="DRAWINGS">FIG. 6</figref> will then be described. The positive output terminal b of the rectifying circuit <b>21</b> is connected with the collector terminal of the IGBT <b>26</b> and the anode of the diode <b>27</b> via the choke coil <b>25</b>. The emitter terminal of the IGBT <b>26</b> is connected with the negative output terminal f of the rectifying circuit <b>21</b>. The cathode of the diode <b>27</b> is connected with the positive terminal of the smoothing capacitor <b>28</b>. The negative terminal of the smoothing capacitor <b>28</b> is connected with the negative output terminal f of the rectifying circuit <b>21</b>.

p-0061Now, the operation of the converter <b>22</b> will be described. When the IGBT <b>26</b> is turned on, current flows from the rectifying circuit <b>21</b> through the choke coil <b>21</b> and the IGBT <b>26</b> so that electromagnetic energy is stored in the choke coil <b>25</b>. When the IGBT <b>26</b> is turned off thereafter, the energy stored in the choke coil <b>25</b> is released in the form of current and flows through the choke coil <b>25</b>, the diode <b>27</b>, the smoothing capacitor <b>28</b> and the rectifying circuit <b>21</b> so that the smoothing capacitor <b>28</b> is charged with electrostatic energy. As a result of the repetition of this operation, the energy supplied from the commercial AC power source <b>20</b> is stored in the smoothing capacitor <b>28</b> and further transferred as energy having voltage higher than the input voltage, to an inverter connected at the after the smoothing capacitor <b>28</b> and to a load (not shown).

p-0062The switching operation of the IGBT <b>26</b> will now be described in detail with reference to <figref idrefs="DRAWINGS">FIGS. 7 and 8</figref>. <figref idrefs="DRAWINGS">FIG. 7</figref> graphically shows the turn-off loss occurring in the switching operation of a conventional gate drive circuit which lacks a negative voltage generating circuit.

p-0063<figref idrefs="DRAWINGS">FIG. 8</figref> graphically shows the turn-off loss occurring in the switching operation of a gate drive circuit according to this invention which includes a negative voltage generating circuit <b>6</b>.

p-0064In both <figref idrefs="DRAWINGS">FIGS. 7 and 8</figref>, the solid curves in the graphs from top to bottom represent the gate voltage Vge, the collector current Ic and the collector voltage Vce, of the IGBT <b>26</b>, and the turn-off loss, respectively.

p-0065The switching operation of the conventional gate drive circuit will first be described with reference to <figref idrefs="DRAWINGS">FIG. 7</figref>. When a turn-off signal is applied to the IGBT <b>26</b> at time to, the gate-emitter capacitance Cge (input capacitance) is discharged until time t<b>1</b>. Consequently, the gate voltage decreases and the collector voltage Vce starts rising at time t<b>1</b>. At this time, a positive voltage is applied to the gate-side terminal of the gate-collector capacitance Ccg (feedback capacitance). When the collector voltage Vce exceeds the gate voltage, current flows from collector to gate via the feedback capacitor. Accordingly, the gate voltage Vge remains constant until time t<b>2</b> when the feedback capacitance discharges, and the collector current Ic of the IGBT <b>26</b> continues to flow. After the feedback capacitance has discharged, the input capacitance discharges again so that the IGBT is turned off and that the collector current Ic of the IGBT is cut off. At this time, the collector voltage Vce rises due to the effect of the time-differential di/dt of the collector current and the collector-emitter capacitance Cce (output capacitance). And when the collector voltage Vce reaches the voltage across the smoothing capacitor <b>28</b>, the collector current Ic continues to fall until time t<b>3</b>. The collector current after time t<b>3</b> is called “tail current”, which flows as a result of carriers accumulated in the IGBT <b>26</b> being released. When the tail current is exhausted, the IGBT <b>26</b> gets turned off.

p-0066Comparison will then be made between the waveforms in the switching operations performed by the gate drive circuits with and without the negative voltage generating circuit, with reference to <figref idrefs="DRAWINGS">FIGS. 7 and 8</figref>. In <figref idrefs="DRAWINGS">FIG. 7</figref> showing the gate drive circuit without the negative voltage generating circuit, a gate voltage Vge in the range of 0˜15V can be applied, whereas in <figref idrefs="DRAWINGS">FIG. 8</figref> showing the gate drive circuit with the negative voltage generating circuit, a gate voltage Vge in the range of −5˜15V can be applied. Since a negative voltage can be applied as the gate voltage Vge, the duration for which the gate voltage Vge changes from 15V to 0V in case of <figref idrefs="DRAWINGS">FIG. 8</figref> can be shorter than the duration for which the gate voltage Vge changes from 15V to 0V in case of <figref idrefs="DRAWINGS">FIG. 7</figref>. Accordingly, the time until the collector current Ic is cut off in <figref idrefs="DRAWINGS">FIG. 8</figref> can be shorter than the time until the collector current Ic is cut off in <figref idrefs="DRAWINGS">FIG. 7</figref>, and thus the turn-off loss can also be drastically decreased.

p-0067<figref idrefs="DRAWINGS">FIG. 9</figref> shows the relationship between the negative voltage and the turn-off loss. As seen in <figref idrefs="DRAWINGS">FIG. 9</figref>, the increase in the absolute value of the negative voltage can decrease the turn-off loss. However, as seen also in <figref idrefs="DRAWINGS">FIG. 9</figref>, the rate of change in the turn-off loss decreases with the increase in the absolute value of the negative voltage. On the other hand, <figref idrefs="DRAWINGS">FIG. 10</figref> shows a characteristic that the turn-off loss hardly changes with the increase in the absolute value of the negative voltage. Here, it is noted that the energy in the form of the negative voltage which drives the gate of the IGBT, is the energy accumulated in the capacitor <b>13</b>. The energy E accumulated in the capacitor <b>13</b> is represented by the following expression (1).

p-0068<maths id="MATH-US-00001" num="00001"><math overflow="scroll"><mtable><mtr><mtd><mrow><mi>E</mi><mo>=</mo><mrow><mfrac><mn>1</mn><mn>2</mn></mfrac><mo></mo><mrow><mi>C</mi><mo>·</mo><mi>Vc</mi></mrow><mo></mo><mstyle><mspace width="0.3em" height="0.3ex" /></mstyle><mo></mo><msup><mn>13</mn><mn>2</mn></msup></mrow></mrow></mtd><mtd><mrow><mo>(</mo><mn>1</mn><mo>)</mo></mrow></mtd></mtr></mtable></math></maths>

p-0069where E denotes the energy stored in the capacitor, C the capacitance of the capacitor, Vc<b>13</b> the voltage across the capacitor.

p-0070It is apparent from the expression (1) that the energy E stored in the capacitor <b>13</b> is proportional to the square of the voltage developed across the capacitor <b>13</b>. Let the capacitance C of the capacitor <b>13</b> be equal to 1 μF and let the energies stored in the capacitor <b>13</b>, when the negative voltage takes values of −5V and −15V, be compared with each other. The stored energy is 12.5 μJ for −5V and 112.5 μJ for −15V. The latter is 9 times as large as the former. The greater is the stored energy, the larger is the required power capacity of the gate power source <b>1</b> which must supply the energy. Further, the resulting increase in the charging current increases the gate drive loss due to the resistance in the wiring conductor and the parasitic resistance (ESR) of the capacitor. Thus, the absolute value of the negative gate voltage should not be made too large so as to suppress the turn-off/turn-on loss and the gate drive loss.

p-0071As described above, if the gate drive circuit according to this invention is used, a negative voltage whose absolute value is smaller than the absolute value of the voltage of the gate power source can be applied between the gate and emitter of the IGBT so that the turn-on speed of the IGBT can be increased and that the turn-off loss can be reduced. This means that the performance of the converter can be improved.

[Modification 1 of Embodiment 5]

p-0072<figref idrefs="DRAWINGS">FIG. 11</figref> shows the first modification of the fifth embodiment described above. <figref idrefs="DRAWINGS">FIG. 11</figref> shows the circuit configuration of a converter <b>22</b>. The converter <b>22</b> employs the configuration of a step-down chopper circuit which comprises a choke coil <b>3</b>, an IGBT <b>29</b>, a diode <b>30</b> and a smoothing capacitor <b>28</b>.

p-0073Description is made of the structure of the circuit. The positive terminal b of the rectifying circuit <b>21</b> is connected with the collector terminal of the IGBT <b>29</b>, and the cathode of the diode <b>30</b> is connected with the emitter terminal of the IGBT <b>29</b>, which is in turn connected with the positive electrode of the smoothing capacitor <b>28</b> via the choke coil <b>31</b>. The negative electrode of the smoothing capacitor <b>28</b> is connected with the anode of the diode <b>30</b> and the negative terminal f of the rectifying circuit <b>21</b>.

p-0074Description is then made of the operation of this converter <b>22</b>. When the IGBT <b>29</b> is turned on, current flows through a path consisting of the rectifying circuit <b>21</b>, the IGBT <b>29</b>, the choke coil <b>31</b> and the smoothing capacitor <b>28</b>. Accordingly, electromagnetic energy is stored in the choke coil <b>31</b> and power is also transferred to the output terminal c. When the IGBT <b>29</b> is then turned off, the electromagnetic energy stored in the choke coil <b>31</b> is released through a path consisting of the choke coil <b>31</b>, the smoothing capacitor <b>28</b> and diode <b>30</b>, so that electric energy is store in the smoothing capacitor <b>28</b>. By repeating this operation, the energy supplied from the commercial AC power source <b>20</b> is stored in the smoothing capacitor <b>28</b> and further transferred as energy having voltage lower than the input voltage, to an inverter connected at the stage after the smoothing capacitor <b>28</b> or a load (not shown).

[Modification 2 of Embodiment 5]

p-0075<figref idrefs="DRAWINGS">FIG. 12</figref> shows the second modification of the fifth embodiment described above. <figref idrefs="DRAWINGS">FIG. 12</figref> shows the circuit configuration of a converter <b>22</b>. The converter <b>22</b> employs a step-up chopper circuit at the front stage and a step-down chopper circuit at the rear stage. Circuit components equivalent to those shown in <figref idrefs="DRAWINGS">FIG. 6</figref> or <b>11</b> are designated by like reference numerals and their description is omitted.

p-0076Description is made of the structure of the circuit in <figref idrefs="DRAWINGS">FIG. 12</figref>. The positive terminal b of the rectifying circuit <b>21</b> is connected with the collector terminal of an IGBT <b>26</b> and the anode of a diode <b>27</b> via a choke coil <b>25</b>. The emitter terminal of the IGBT <b>26</b> is connected with the negative terminal f of the rectifying circuit <b>21</b>. The cathode of the diode <b>27</b> is connected with the positive electrode of the smoothing capacitor <b>28</b>. The negative electrode of the smoothing capacitor <b>28</b> is connected with the negative terminal f of the rectifying circuit <b>21</b>. In this way, a step-up chopper circuit is made up.

p-0077Further, the positive electrode of the smoothing capacitor <b>28</b> is connected with the collector terminal of the IGBT <b>29</b>, and the emitter terminal of the IGBT <b>29</b> is connected with the cathode of the diode <b>30</b>. Also, the emitter terminal of the IGBT <b>29</b> is connected with the positive electrode of an output capacitor <b>32</b> via the choke coil <b>31</b>. The negative electrode of the output capacitor <b>32</b> is connected with the anode of the diode <b>30</b> and the negative electrode of the smoothing capacitor <b>28</b>.

p-0078Description is then made of the operation of this converter <b>22</b>. First, the step-up chopper circuit performs the PFC control described above with the fourth embodiment, shaping the input current into a sinusoidal wave and performing control for adjusting the voltage across the smoothing capacitor <b>28</b> to a fixed value. The step-down chopper circuit controls its output voltage and supplies power in accordance with the outputs of the inverter <b>23</b> and the load <b>24</b> connected therewith. The detailed descriptions of the operations of the step-up and step-down choppers are omitted since they are the same as those described above with the fifth embodiment and the first modification of the fifth embodiment.

[Modification 3 of Embodiment 5]

p-0079<figref idrefs="DRAWINGS">FIG. 13</figref> shows the third modification of the fifth embodiment described above. <figref idrefs="DRAWINGS">FIG. 13</figref> shows the circuit configuration of a converter <b>22</b>. The converter <b>22</b> shown in <figref idrefs="DRAWINGS">FIG. 13</figref> employs a step-down chopper circuit at the front stage and a step-up chopper circuit at the rear stage, and comprises a choke coil <b>33</b>, IGBTs <b>26</b> and <b>29</b>, diodes <b>27</b> and <b>30</b>, and a smoothing capacitor <b>28</b>.

p-0080Description is made of the structure of the circuit in <figref idrefs="DRAWINGS">FIG. 13</figref>. The positive terminal b of the rectifying circuit <b>21</b> is connected with the collector terminal of the IGBT <b>29</b>, and the emitter terminal of the IGBT <b>29</b> is connected with the cathode of the diode <b>30</b>. Also, the emitter terminal of the IGBT <b>29</b> is connected with the collector terminal of the IGBT <b>26</b> and the anode of the diode <b>27</b> via the choke coil <b>33</b>. The emitter terminal of the IGBT <b>26</b> is connected with the negative terminal f of the rectifying circuit <b>21</b>. The cathode of the diode <b>27</b> is connected with the positive electrode of the smoothing capacitor <b>28</b>. The negative electrode of the smoothing capacitor <b>28</b> is connected with the negative terminal f of the rectifying circuit <b>21</b>.

p-0081Description is then made of the operation of this converter <b>22</b>. First, a step-down operation takes place if the output voltage is lower than the input voltage. When the IGBT <b>29</b> is turned on and the IGBT <b>26</b> is turned off, current flows through a path consisting of the rectifying circuit <b>21</b>, the IGBT <b>29</b>, the choke coil <b>33</b>, the diode <b>27</b> and the smoothing capacitor <b>28</b> so that electromagnetic energy is stored in the choke coil <b>33</b> and also that electric power is transferred to the output terminal c. Then, if the IGBT <b>29</b> is turned off, the energy stored in the choke coil <b>33</b> is released through a path consisting of the choke coil <b>33</b>, the diode <b>27</b>, the smoothing capacitor <b>28</b> and diode <b>30</b> so that electrostatic energy is accumulated in the smoothing capacitor <b>28</b>. By repeating this operation, the energy supplied from the commercial AC power source <b>20</b> is stored in the smoothing capacitor <b>28</b> and further transferred as energy having a voltage lower than the input voltage, to an inverter connected at the stage after the smoothing capacitor <b>28</b> and a load (not shown).

p-0082On the other hand, in the step-up operation, when the IGBT <b>29</b> remains turned on and the IGBT <b>26</b> is also turned on, current flows through a path consisting of the rectifying circuit <b>21</b>, the IGBT <b>29</b>, the choke coil <b>33</b> and the IGBT <b>26</b> so that electromagnetic energy is stored in the choke coil <b>33</b>. Then, if the IGBT <b>26</b> is turned off, the energy stored in the choke coil <b>33</b> is released through a path consisting of the choke coil <b>33</b>, the diode <b>27</b>, the smoothing capacitor <b>28</b>, the rectifying circuit <b>21</b> and the IGBT <b>29</b> so that electrostatic energy is accumulated in the smoothing capacitor <b>28</b>. By repeating this operation, the energy supplied from the commercial AC power source (not shown) is stored in the smoothing capacitor <b>28</b>; a voltage higher than the input voltage is outputted; and energy is transferred to an inverter connected at the stage after the smoothing capacitor <b>28</b> and a load (not shown).

p-0083In this modification of the fifth embodiment, the PFC control can be performed by selectively performing the step-down and step-up operations in accordance with the input voltage.

Embodiment 6

p-0084The sixth embodiment of this invention will be described with reference to <figref idrefs="DRAWINGS">FIG. 14</figref>.

p-0085<figref idrefs="DRAWINGS">FIG. 14</figref> shows a circuit prepared for describing in detail the inverter <b>23</b> and the load <b>24</b> used in the preceding embodiments.

p-0086<figref idrefs="DRAWINGS">FIG. 14</figref> shows the circuit configuration of an inverter <b>23</b> and a load <b>24</b> to be used in this sixth embodiment. The inverter <b>23</b> and the load <b>24</b> together are in the form of a half-bridge inverter used as an induction heating circuit. A series circuit of an IGBT <b>41</b> and an IGBT <b>43</b> is connected between the positive and negative terminals c and g of the converter <b>22</b>. Let the junction point between the IGBTs <b>41</b> and <b>43</b> be named “point t”. Then, a parallel circuit of a diode <b>42</b> and a snubber capacitor <b>45</b> is connected between the collector and emitter terminals of the IGBT <b>41</b>, with the anode and cathode of the diode <b>42</b> connected respectively with the point t and the point c; and a parallel circuit of a diode <b>44</b> and a snubber capacitor <b>46</b> is connected between the collector and emitter terminals of the IGBT <b>43</b>, with the anode and cathode of the diode <b>44</b> connected respectively with the point g and the point t. In this way, the upper and lower arms <b>200</b> of the inverter are constructed. Further, a series circuit of resonant capacitors <b>48</b> and <b>49</b> is connected between the points c and g. Let the junction point between the resonance capacitors <b>48</b> and <b>49</b> be named “point s”. Then, a heating coil <b>47</b> is connected between the points t and s. It is to be noted here that as disclosed in the fourth embodiment described above, the output terminals of the converter <b>22</b> or the output terminals of the rectifying circuit <b>21</b> which rectifies the AC power supplied from the commercial AC power source <b>20</b> may be connected with the points c and g.

p-0087Next, the operation of the inverter will be described. <figref idrefs="DRAWINGS">FIG. 15</figref> shows the waveforms appearing in the mode <b>1</b> through the mode <b>4</b> of the operation of the inverter according to this embodiment. It is to be noted here that in each mode the IGBTs <b>41</b> and <b>43</b> have a dead time period and operate on complementary basis.

p-0088As shown in <figref idrefs="DRAWINGS">FIG. 15</figref>, a sinusoidal coil current ILc flows through the heating coil <b>47</b>. The resonance frequency fr for the current ILc is given by the following expression (2) involving the inductance L of the heating coil <b>47</b> and the synthesized electrostatic capacitance C of the parallel circuit of the resonance capacitors <b>48</b> and <b>49</b>.

p-0089<maths id="MATH-US-00002" num="00002"><math overflow="scroll"><mtable><mtr><mtd><mrow><mi>fr</mi><mo>=</mo><mfrac><mn>1</mn><mrow><mn>2</mn><mo></mo><mi>π</mi><mo></mo><msqrt><mrow><mi>L</mi><mo>·</mo><mi>C</mi></mrow></msqrt></mrow></mfrac></mrow></mtd><mtd><mrow><mo>(</mo><mn>2</mn><mo>)</mo></mrow></mtd></mtr></mtable></math></maths>

p-0090The detailed description of the operations in mode <b>1</b> through mode <b>4</b> will be made below.

[Mode 1]

p-0091It is assumed that the mode <b>1</b> starts at the instant of time when the collector current Ic<b>1</b> of the IGBT <b>41</b> vanishes, that is, becomes 0 A. At the beginning of the mode <b>1</b>, although no current is flowing through the IGBT <b>41</b>, the current Ic<b>1</b> starts flowing through the IGBT <b>41</b> immediately after the beginning of the mode <b>1</b> since at this time the IGBT <b>41</b> has already been turned on. Since at this time the emitter-collector voltage Vc<b>1</b> of the IGBT <b>41</b> is 0V, the IGBT <b>41</b> performs the so-called ZVZCS turn-on that accompanies zero power loss.

[Mode 2]

p-0092When the IGBT <b>41</b> is turned off and the mode <b>2</b> is entered, the current ILc flows through a path consisting of the converter <b>22</b>, snubber capacitor <b>45</b>, the heating coil <b>47</b> and the resonance capacitor <b>49</b>; a path consisting of the heating coil <b>47</b>, the resonance capacitor <b>48</b> and the snubber capacitor <b>45</b>; and a path consisting of the snubber capacitor <b>46</b>, the heating coil <b>47</b> and the resonance capacitor <b>49</b>. In this case, the snubber capacitor <b>45</b> is charged and the snubber capacitor <b>46</b> is discharged. As a result, the emitter-collector voltage of the IGBT <b>41</b> rises slowly so that the ZVS turn-off takes place, thereby making the switching loss small.

p-0093When the voltage Vc<b>1</b> across the snubber capacitor <b>45</b> exceeds the power source voltage (i.e. voltage between the terminals c and g), the voltage Vc<b>2</b> across the snubber capacitor <b>46</b> is reduced to zero. Consequently, the diode <b>44</b> becomes conductive and the current ILc continues to flow through the heating coil <b>47</b>. A turn-on signal is applied to the IGBT <b>43</b> while the diode <b>44</b> is drawing current.

[Mode 3]

p-0094It is assumed that the mode <b>3</b> starts at the instant of time when the collector current Ic<b>2</b> of the IGBT <b>43</b> vanishes, that is, becomes 0 A. At the beginning of the mode <b>3</b>, although no current is flowing through the IGBT <b>43</b>, the current Ic<b>2</b> starts flowing through the IGBT <b>43</b> immediately after the beginning of the mode <b>3</b> since at this time the IGBT <b>43</b> has already been turned on. Since at this time the emitter-collector voltage Vc<b>2</b> of the IGBT <b>43</b> is 0V, the IGBT <b>43</b> performs the so-called ZVZCS turn-on that accompanies zero power loss.

[Mode 4]

p-0095When the IGBT <b>43</b> is turned off and the mode <b>4</b> is entered, the current ILc flows through a path consisting of the heating coil <b>47</b>, the snubber capacitor <b>46</b>, the converter <b>22</b> and the resonance capacitor <b>48</b>; a path consisting of the heating coil <b>47</b>, the snubber capacitor <b>46</b> and the resonance capacitor <b>49</b>; and a path consisting of the snubber capacitor <b>45</b> resonance capacitor <b>48</b> and the heating coil <b>47</b>. In this case, the snubber capacitor <b>46</b> is charged and the snubber capacitor <b>45</b> is discharged. As a result, the emitter-collector voltage of the IGBT <b>43</b> rises slowly so that the ZVS turn-off takes place, thereby making the switching loss small.

p-0096By repeating operations represented by the modes <b>1</b> through <b>4</b>, that is, causing high frequency current to flow through the heating coil <b>47</b>, the heating coil <b>47</b> generates magnetic flux. The magnetic flux in turn generates eddy currents in a pan placed over the heating coil so that the pan is heated due to the phenomenon of inductive heating.

p-0097<figref idrefs="DRAWINGS">FIGS. 16 and 17</figref> show signal waveforms for explaining how turn-off takes place in the presence or absence of the negative gate voltage. As described above, since a resonance type inverter does not incur turn-on loss, loss is incurred only in the turn-off operation. <figref idrefs="DRAWINGS">FIG. 16</figref> shows the waveforms for the operation without negative gate voltage, while <figref idrefs="DRAWINGS">FIG. 17</figref> shows the waveforms for the operation with negative gate voltage. The operation mechanism at the time of turn-off is not described here as it is the same as that described above with the fifth embodiment.

p-0098It is understood that when a negative voltage is applied to the gate, the gate voltage shown in <figref idrefs="DRAWINGS">FIG. 17</figref> falls faster than the gate voltage shown in <figref idrefs="DRAWINGS">FIG. 16</figref>. Accordingly, the collector current is also cut off rapidly so that the turn-off loss can be reduced. In this embodiment, too, the turn-off loss can be reduced without the application of a negative gate voltage higher than required, by using a gate drive circuit according to this invention. Thus, the heating efficiency of a cooking heater of inductive heating (IH) type.

[Modification 1 of Embodiment 6]

p-0099<figref idrefs="DRAWINGS">FIG. 18</figref> shows an inverter and its load as the first modification of the sixth embodiment. This first modified embodiment lacks the resonance capacitor <b>48</b> used in the sixth embodiment described above, and takes on a resonance capacitor <b>51</b> in place of the resonance capacitor <b>49</b>. The rest of the circuit shown in <figref idrefs="DRAWINGS">FIG. 18</figref> is the same as the circuit of the sixth embodiment shown in <figref idrefs="DRAWINGS">FIG. 14</figref>, and the description is omitted. This inverter is of single ended push pull (SEPP) circuit configuration. The capacitance of the resonance capacitor <b>51</b> is set equal to the synthesized capacitance of the resonance capacitors <b>48</b> and <b>49</b> connected in series with each other. The description of the operations of this inverter and its load is omitted since they are the same as those described with the sixth embodiment.

[Modification 2 of Embodiment 6]

p-0100<figref idrefs="DRAWINGS">FIG. 19</figref> shows an inverter and its load as the second modification of the sixth embodiment. This modification is of full-bridge inverter circuit configuration. In <figref idrefs="DRAWINGS">FIG. 19</figref>, circuit components equivalent to those shown in <figref idrefs="DRAWINGS">FIG. 14</figref> are designated by the same reference numerals. Also, duplicated description will be avoided. The upper/lower arm <b>200</b> and upper/lower arm <b>300</b> of the full-bridge inverter are connected between the output terminals c and g, and a series circuit of the heating coil <b>47</b> and the resonance capacitor <b>51</b> is connected between the mid point t of the upper/lower arm <b>200</b> and the mid point r of the upper/lower arm <b>300</b>. The IGBT <b>41</b> and <b>43</b>, and IGBT <b>61</b> and <b>63</b> are provided respectively with the reverse-parallel diodes <b>42</b> and <b>44</b>, and reverse-parallel diodes <b>62</b> and <b>64</b>, with the collector terminals of the IGBTs connected with the cathodes of the diodes and the emitter terminals of the IGBTs connected with the anodes of the diodes. By applying the same drive signal to the gates of the IGBTs <b>41</b> and <b>63</b> and also by applying the same drive signal to the gates of the IGBTs <b>43</b> and <b>61</b>, the IGBTs <b>41</b> and <b>43</b> operate in complementary manner while the IGBTs <b>61</b> and <b>63</b> operate in complementary manner.

p-0101As to the soft-switching operation of the IGBTs, description will be omitted since it is like what has been described with the half-bridge inverter under the foregoing captions. In this case of full-bridge inverter, the voltage applied across the series circuit of the heating coil <b>47</b> and the resonance capacitor <b>51</b>, i.e. inverter output voltage (voltage between points t and r), is twice as high as the inverter output voltage of the half-bridge inverter. Accordingly, the number of the turns of the heating coil <b>47</b> can be increased so that heating efficiency can be improved.

[Modification 3 of Embodiment 6]

p-0102<figref idrefs="DRAWINGS">FIG. 20</figref> shows an inverter circuit with its load, as the third modification of the sixth embodiment. This modified embodiment uses a relay <b>53</b> for changing over between the single ended push pull (SEPP) circuit configuration and the full-bridge inverter circuit. Regarding inductive heating, if the types of inverters are changed depending on the types of loads to be heated, not only load of magnetic metal such as iron or magnetic stainless steel but also load of non-magnetic metal such as aluminum or copper can be heated. Non-magnetic material such as aluminum or copper that has a low electric resistivity is heated by the SEPP inverter. On the other hand, magnetic material such as iron or magnetic stainless steel that has a high electric resistivity is heated by the full-bridge inverter which can generate a high voltage due to the resonance circuit consisting of the heating coil and the resonance capacitor. By opening the contacts of the relay <b>53</b>, the SEPP inverter is brought into action while the full-bridge inverter takes over the SEPP inverter by closing the contacts of the relay <b>53</b>. The description of the operations of the SEPP inverter and the full-bridge inverter will be omitted since it is the same as with the modifications <b>1</b> and <b>2</b> of the sixth embodiment.

Embodiment 7

p-0103The seventh embodiment of this invention will be described with reference to <figref idrefs="DRAWINGS">FIG. 21</figref>.

p-0104<figref idrefs="DRAWINGS">FIG. 21</figref> is used to concretely explain the inverter <b>23</b> and the load <b>24</b> used in the foregoing embodiments.

p-0105<figref idrefs="DRAWINGS">FIG. 21</figref> shows the circuit diagram of the inverter <b>23</b> and the load <b>24</b> used in the foregoing embodiments. The inverter <b>23</b> of this embodiment is a three-phase full-bridge inverter circuit for use as a motor inverter. Between the output terminals c and g of the converter <b>22</b> are connected the U-phase, V-phase and W-phase branches of the three-phase full-bridge inverter. The U-phase branch comprises a series circuit of an IGBT <b>71</b> with a reverse-parallel diode <b>72</b> connected between its emitter and collector and an IGBT <b>73</b> with a reverse-parallel diode <b>74</b> connected between its emitter and collector; the diode <b>72</b> having its cathode and anode connected respectively with terminal c and the point u, i.e. junction point between the IGBTs <b>71</b> and <b>73</b>, and the diode <b>74</b> having its anode and cathode connected respectively with the terminal g and the point u. The V-phase branch comprises a series circuit of an IGBT <b>75</b> with a reverse-parallel diode <b>76</b> connected between its emitter and collector and an IGBT <b>77</b> with a reverse-parallel diode <b>78</b> connected between its emitter and collector; the diode <b>76</b> having its cathode and anode connected respectively with terminal c and the point v, i.e. junction point between the IGBTs <b>75</b> and <b>77</b>, and the diode <b>78</b> having its anode and cathode connected respectively with the terminal g and the point v. The W-phase branch comprises a series circuit of an IGBT <b>79</b> with a reverse-parallel diode <b>80</b> connected between its emitter and collector and an IGBT <b>81</b> with a reverse-parallel diode <b>82</b> connected between its emitter and collector; the diode <b>80</b> having its cathode and anode connected respectively with terminal c and the point w, i.e. junction point between the IGBTs <b>79</b> and <b>81</b>, and the diode <b>82</b> having its anode and cathode connected respectively with the terminal g and the point w. A three-phase motor <b>83</b> is connected with the output terminals of the three-phase inverter, i.e. points u, v and w.

p-0106Now, description will be made of the operation of the three-phase bridge inverter shown in <figref idrefs="DRAWINGS">FIG. 21</figref>. <figref idrefs="DRAWINGS">FIG. 22</figref> shows the waveforms useful in understanding the operation of the three-phase bridge inverter. With a three-phase full-bridge inverter, high-frequency square-wave outputs whose averages are proportional to the amplitudes of the voltage command signals can be obtained by controlling the conduction and cutoff of the IGBTs in response to the switching signals generated as a result of the comparison of the triangular carrier signal with the voltage command signals. Therefore, if the voltage command signals are changed in a sinusoidal manner, AC output voltages can be obtained. As shown in <figref idrefs="DRAWINGS">FIG. 22</figref>, at time instants when the amplitudes of the sinusoidal voltage command signals of the respective phases Uu, Vv and Ww becomes equal to the amplitude of the triangular wave signal Vt, two IGBTs of the corresponding phases are turned on or off. It is to be noted here that regarding the two IGBTs of the same phase, while one is conducting, the other is cut off so that short circuiting in the power source can be avoided. The output voltages of the respective phases are denoted by Vuv, Vvw and Vwu. When these inter-phase voltages are applied to the respective phase windings of the motor, the motor is driven to rotate. <figref idrefs="DRAWINGS">FIGS. 23 and 24</figref> show operating waveforms generated when the IGBTs are switched with and without a negative voltage generating circuit. <figref idrefs="DRAWINGS">FIG. 23</figref> corresponds to the case where the negative voltage generating circuit is not used, and <figref idrefs="DRAWINGS">FIG. 24</figref> corresponds to the case where the negative voltage generating circuit is used. In <figref idrefs="DRAWINGS">FIGS. 23 and 24</figref> are shown from top to bottom the waveforms of the gate voltages of the IGBTs <b>73</b> and <b>71</b>, the collector voltage Vice and the collector current Ic of the IGBT <b>73</b>, the cathode voltage Vka of and the current Id through the diode <b>72</b>, and the turn-on loss Eon of the IGBT <b>73</b>. The operation is as follows. As seen in <figref idrefs="DRAWINGS">FIG. 23</figref>, when the IGBT <b>73</b> is turned on at time t<b>0</b>, the collector voltage decreases at t<b>1</b>. Also, the forward current through the diode <b>72</b> decreases with the increase in the collector current of the IGBT <b>73</b>. At time t<b>2</b>, a through current flows through the U-phase winding due to the recovery current of the diode <b>72</b>. Consequently, the gate voltage of the IGBT <b>71</b> rises and when it exceeds a threshold value, the IGBT <b>71</b> fires erroneously. On the other hand, as seen from <figref idrefs="DRAWINGS">FIG. 24</figref>, since the gate voltage of the IGBT <b>73</b> is kept negative, the recovery current of the diode <b>72</b> is suppressed to reduce the increment of the gate voltage. Thus, the IGBT <b>73</b> can be prevented from being erroneously fired so that the turn-on loss of the IGBT <b>73</b> can be reduced. As described hitherto, by using the gate drive circuit according to this invention, the combination of a single power source and associated simple circuit configuration can generate a required negative gate voltage so that the motor inverter can be prevented from being erroneously fired and that the turn-on loss of the inverter can be reduced.

p-0107In the foregoing embodiments and their modifications, IGBTs are used as voltage-driven type semiconductor elements. However, the effect of this invention will remain valid even if the IGBTs are replaced by power MOSFETs suitable for high-frequency drive, or MOSFETs as wide band-gap elements that can operate at extremely high frequencies and under high temperatures, or JFETs.

p-0108It should be further understood by those skilled in the art that although the foregoing description has been made on embodiments of the invention, the invention is not limited thereto and various changes and modifications may be made without departing from the spirit of the invention and the scope of the appended claims.