Reverse polarity protection device

Reverse polarity protection device

The present invention relates to the technical field of power input protection, and more particularly to a reverse polarity protection device applied between a power supply device and its load device.

With the extensive application of technologies such as the Internet of Things, AI big data analysis, and cloud storage, the server system and data center are also designed toward modular design, which is beneficial for engineers to adjust the server system and data center. Electronic devices such as network units and/or storage units. In addition, the power supply system is also modularly designed to enable power to be supplied to server systems and/or data centers located in different cabinets. Generally speaking, the internal power supply terminal of the power supply module inside the server system and the data center has a foolproof design, so as to prevent the assembler from connecting the positive and negative poles when performing the assembly procedure of the power module and the main board. However, the external power supply terminal for the power module to be electrically connected to the external power supply device usually uses a conventional power supply terminal; it is conceivable that it is difficult to further increase the foolproof design on the conventional power supply terminal.

At present, a diode is known to be applied as a reverse polarity protection component, which is usually disposed between a power input terminal of an integrated circuit chip (IC) and a power supply module, and is used for forward and reverse cutoff. Features to achieve reverse polarity protection for the integrated circuit die. However, in the application of the high-power power supply module, the power consumption and heat generated by the diode after the conduction will become a problem that the circuit module needs to overcome and improve, so that the diode can only be applied to low power. Large voltage power supply module. For example, some data centers are equipped with 12V/200W power supply modules, and the diodes cannot be used in these data centers to provide reverse polarity protection.

In view of this, Taiwan's new patent number M325665 discloses a foolproof circuit structure, and the first figure shows the circuit side of the foolproof circuit structure disclosed in Taiwan's new patent No. M325665. Block diagram. As shown in FIG. 1, the foolproof circuit structure 1' is coupled between the DC power source 2' and a load device 3'. According to the disclosure of Taiwan's new patent No. M325665, the foolproof circuit structure 1' is a P-type MOSFET (N-type Metal-Oxide-Semiconductor Field-Effect Transistor, P-type MOSFET). The drain, the source and the gate of the P-type MOS field-effect transistor are respectively coupled to the DC power source 2', the load device 3' and a common ground terminal GND'.

The foolproof circuit structure 1' can indeed provide reverse polarity protection to the load device 3'; however, it must be noted that the MOSFET is used for protection only if one of the DC power supplies 2' is abnormal. The other power source is also affected, causing system instability.

As can be seen from the above description, it is necessary to design and develop a reverse polarity protection element or device that can be applied to a circuit of low power and large voltage. Therefore, based on the above reasons, the creator of this case tried his best to research and create, and finally developed a new type of reverse polarity protection device.

The main purpose of the novel creation is to provide a reverse polarity protection device, comprising: a protection unit electrically connected between a power supply device and a load device, a detection unit, and a control unit; wherein the detection The measuring unit is electrically connected to the power supply device to detect the polarity of an output signal of the power supply device, and the control unit is electrically connected to the detecting unit and the protection unit. According to the design of the present invention, the detecting unit outputs a detection signal to the control unit according to the detection result of the polarity of the output signal. For example, the control unit controls the protection unit to form an open circuit between the power supply device and the load device when the detection signal indicates that the polarity of the output signal is reversed, thereby blocking the output signal of the power supply device. It is transmitted to the load device to achieve reverse polarity protection for the load device.

In order to achieve the above-mentioned primary object of the present invention, the creator of the present invention provides an embodiment of the reverse polarity protection device, which includes: a protection unit electrically connected between a power supply device and a load device; a detection unit electrically connected to the power supply device for detecting the polarity of an output signal of the power supply device; and a control The unit is electrically connected to the detecting unit and the protection unit. When the detecting unit detects that the polarity of the output signal is reversed, the control unit controls the protection unit to be connected to the power supply device and the load device. An open circuit is formed.

In the embodiment of the reverse polarity protection device, the protection unit is an N-type MOS field effect transistor or a P-type MOS field effect transistor.

In the embodiment of the reverse polarity protection device, the output signal is a voltage signal or a current signal.

In the foregoing embodiment of the reverse polarity protection device, the load device can be any of the following: an industrial computer host, a server, a data center host, a desktop computer, a notebook computer, a tablet computer, a smart phone, or a smart device. Watch.

<heading level="1">&lt;This new type&gt;</heading><p>1‧‧‧Reverse polarity protection device</p><p>11‧‧‧Protection unit</p><p>12‧‧‧Detection unit</p><p>13‧‧‧Control unit</p><p>2‧‧‧Power supply unit</p><p>3‧‧‧Loading device</p><p>QN‧‧‧N type gold oxygen half field effect transistor</p><p>S1-S4‧‧‧ steps</p><p>QP‧‧‧P type gold oxide half field effect transistor</p><heading level="1">&lt;知知&gt;</heading><p>1'‧‧‧ foolproof circuit structure</p><p>2'‧‧‧DC power supply</p><p>3'‧‧‧Loading device</p>

Figure 1 is a circuit block diagram of the foolproof circuit structure disclosed in Taiwan's new patent No. M325665; Figure 2 is a circuit block diagram of a reverse polarity protection device proposed by the present invention; Figure 3 is a new reverse polarity protection of the present invention. The circuit architecture diagram of the device; FIG. 4 is a flow chart of the operation method of the detection unit and the control unit; and FIG. 5 is a circuit architecture diagram of the novel reverse polarity protection device.

In order to more clearly describe a reverse polarity protection device proposed by the present invention, a preferred embodiment of the present invention will be described in detail below with reference to the drawings.

Figure 2 shows the circuit block of a reverse polarity protection device proposed by the present invention. Figure, and Figure 3 shows the circuit architecture of the novel reverse polarity protection device. As shown in FIG. 2 and FIG. 3 , the reverse polarity protection device 1 of the present invention comprises a protection unit 11 , a detection unit 12 and a control unit 13 . The protection unit 11 is electrically connected between a power supply device 2 and a load device 3, and the detection unit 12 is electrically connected to the power supply device 2 to detect an output signal of the power supply device 2. Polarity. On the other hand, the control unit 13 is electrically connected to the detecting unit 12 and the protection unit 11. In the present invention, the protection unit 11 includes an N-type Metal-Oxide-Semiconductor Field-Effect Transistor (N-type MOSFET) QN. As shown in FIG. 3, the N-type MOS field-effect transistor QN receives the output signal provided by the power supply device 2 at its source terminal (S), and the N of the N-type MOS field-effect transistor QN The extreme (D) and the gate terminal (G) are electrically connected to the load device 3 and the control unit 13, respectively. Meanwhile, as shown in FIG. 3, the source terminal (S) and the 汲 terminal (D) of the N-type MOS field-effect transistor QN are also electrically connected to the control unit 13, respectively. According to FIG. 3, the control unit 13 can also detect the polarity of the output signal by itself. For example, the control unit 13 can compare the potential output signal of the source terminal (S) of the N-type MOS field-effect transistor QN with the potential of the common ground terminal, thereby determining the polarity of the output signal. When the polarity of the output signal is correct, the control unit 13 activates the N-type MOS half-effect transistor QN to form a short circuit between the power supply device 2 and the load device 3.

However, the power supply unit 2 mounted in the data center usually includes a multi-power output and an OR-ing power architecture (redundant power supply). Therefore, in order to avoid the abnormality of one of the power supply devices 2, and the other power output is also affected, the present invention simultaneously uses the detecting unit 12 to notify the control unit 13 to enable/disable the N-type gold-oxygen half field. Effect transistor QN.

According to the detection result of the polarity of the output signal, the detecting unit 12 correspondingly outputs a detection signal to the control unit 13, so that the control unit 13 correspondingly enables/disables the N-type MOS field-effect transistor QN. Figure 4 is a flow chart showing the operation of the detecting unit and the control unit. As shown in FIG. 4, after the power supply device 2 provides the output signal (step S1), if the detecting unit 12 detects that the polarity of the output signal is normal (step S2), the detecting unit 12 will The detection signal output is a low level signal. Here, the polarity of the output signal is normal. The level of the number is greater than zero. For example, if the output signal is a positive voltage signal or a positive current signal, the detecting unit 12 compares the output signal with the potential of the common ground terminal, and knows that the level is greater than zero. At this time, in step S3, the control unit 13 activates the N-type MOS field-effect transistor QN when the detection signal is a low level signal, so that the protection unit 11 A short circuit is formed between the power supply device 2 and the load device 3, so that the output signal of the power supply device 2 can be transmitted to the load device 3.

Conversely, if the detection result shows that the polarity of the output signal is reversed (step S2), the detecting unit 12 outputs the detection signal as a high level signal. At this time, in step S4, the control unit 13 turns off the N-type MOS field-effect transistor QN when the detection signal is a high-level signal, so that the protection unit 11 is connected to the power supply device 2 An open circuit is formed between the load devices 3 to block the output signal of the power supply device 2 from being continuously transmitted to the load device 3 to achieve reverse polarity protection for the load device 3. It should be emphasized that the foregoing description indicates that the detecting unit 12 outputs a low level signal and a high level signal when the polarity of the output signal is normal and the polarity is reversed. However, it must be known that the detection unit 12 outputs the high-level signal and the low-level signal respectively when the polarity of the output signal is normal and the polarity is reversed, which is not difficult for the electronic engineer.

Briefly, when one of the power sources has a problem or the polarity of the output signal is reversed, the detecting unit 12 directly informs the control unit 13 to turn off the N-type MOS field-effect transistor QN. Therefore, the design of the detecting unit 12 provides an additional safety mechanism that does not cause the other power output to be affected even if one of the power supply devices 2 is abnormally outputted. In particular, the present invention does not particularly limit the implementation of the load device 3, and may be any electronic device or motor device that requires an external power supply device, such as an industrial computer host, a server, a data center host, and a table. A laptop, laptop, tablet, smart phone, or smart watch. On the other hand, in a possible practical application, the protection unit 11, the detection unit 12 and the control unit 13 can be integrated into an integrated circuit (IC).

Furthermore, although FIG. 3 shows that the protection unit 11 includes an N-type gold oxygen half field. The transistor QN, however, should not limit the circuit implementation of the protection unit 11 thereby. According to the circuit architecture diagram of the novel reverse polarity protection device shown in FIG. 5, it can be known that, in a practical application, the protection unit 11 can also include a P-type MOS field-effect transistor QP. The P-type MOS field-effect transistor QP receives the output signal of the power supply device 2 at its source terminal (S), and the 汲 terminal (D) and the gate terminal (G) of the P-type MOS field-effect transistor QP ) electrically connected to the load device 3 and the control unit 13 respectively. In addition, as shown in FIG. 5, the source terminal (S) and the 汲 terminal (D) of the P-type MOS field-effect transistor QN are electrically connected to the control unit 13 at the same time.

Thus, the above description has described the preferred embodiment of the novel reverse polarity protection device in detail with reference to the drawings. However, it is to be understood that the foregoing detailed description of the present invention is not intended to limit the scope of the present invention. Changes should be included in the scope of the patent in this case.