Process kit for multi-cathode processing chamber

Processing kit for multi-cathode processing chamber

PROCESS KIT FOR MULTI-CATHODE PROCESSING CHAMBER

The embodiments of the present disclosure generally relate to processing kits for multi-cathode processing chambers.

Physical vapor deposition (PVD) in semiconductor manufacturing is usually performed with a target made of the required film material. In the case of alloys, the target is usually composed of the alloy to be sputtered. In the case of the new non-volatile memory, alloys of different compositions are used. As a result, multiple targets in a multi-cathode (such as multi-target) PVD chamber have been used to sequentially deposit different materials. However, due to the cross-contamination of multiple targets, the targets are regularly cleaned to maintain the consistency of the film. For example, during the cleaning process, a shutter may cover one or more of a plurality of targets, which may cause particle generation.

Therefore, the author provides an embodiment of a processing kit for a multi-cathode processing chamber.

This specification provides examples of processing kits for multi-cathode processing chambers. The processing kit includes one or more of the following: a tapered shield, a rotatable shield, a shield, an inner deposition ring, an outer deposition ring, and a cover ring.

In some embodiments, the processing kit includes: a rotatable shield, an inner deposition ring, and an outer deposition ring. The rotatable shield has a base, a tapered portion, and a collar portion. And extending radially outward, the collar portion extends radially outward from the bottom of the tapered portion, wherein an egg-shaped hole is formed through the tapered portion; the inner deposition ring has a leg portion, a flat portion, a first A recess and a first lip, the flat portion extends radially inward from the leg portion, the first recess extends radially inward from the flat portion, and the first lip extends upward from the innermost portion of the first recess; The outer deposition ring has a collar portion, an upper flat portion, a second recess, and a second lip. The upper flat portion is disposed above the collar portion and extends radially inward from the collar portion, and the second recess extends from The upper flat portion extends inward, and the second lip extends upward from the innermost portion of the second recess.

In some embodiments, the multi-cathode processing chamber includes a substrate support, a plurality of cathodes, and a processing kit. The substrate support supports the substrate; the plurality of cathodes are coupled to the carrier and have corresponding sputtering on the substrate. A plurality of targets; the processing kit is arranged in the processing chamber. The processing kit includes a rotatable shield, an inner deposition ring, and an outer deposition ring. The rotatable shield is rotatably disposed between the substrate support and the plurality of targets, wherein the shield includes a base, A tapered portion and a collar portion, the tapered portion extends downward from the base and extends radially outward, and the collar portion extends radially outward from the bottom of the tapered portion, wherein the shield includes passing through the An egg-shaped hole formed by a tapered portion, the egg-shaped hole exposing one of the plurality of targets, while covering the rest of the plurality of targets; the internal deposition ring is configured to be set on the substrate support On the top of the piece and under the outer edge of the substrate, wherein the inner deposition ring includes a leg portion, a flat portion, a first recess and a first lip, the flat portion extends radially inward from the leg portion, the first A recess extends radially inward from the flat portion, and the first lip extends upward from the innermost portion of the first recess; the outer deposition ring is disposed radially outward from the inner deposition ring, and the outer deposition ring has a collar Part, an upper flat part, a second recess and a second lip, the upper flat part is disposed above the collar part and extends radially inward from the collar part, and the second recess extends inward from the upper flat part , The second lip extends upward from the innermost part of the second recess, wherein the leg portion of the inner deposition ring extends into the second recess of the outer deposition ring to deposit the inner ring and the outer deposition ring A tortuous path is formed between.

In some embodiments, the processing kit for the multi-cathode processing chamber includes a rotatable shield, an inner deposition ring, an outer deposition ring, a plurality of shields, a tapered shield, and a cover ring. The rotatable shield The member has a base, a tapered portion, and a collar portion, the tapered portion extends downward and radially outward from the base, the collar portion extends radially outward from the bottom of the tapered portion, and the egg-shaped hole penetrates Formed through the tapered portion; the inner deposition ring has a leg portion, a flat portion, a first recess and a first lip, the flat portion extends radially inward from the leg portion, and the first recess extends radially from the flat portion Extending inward, the first lip extends upward from the innermost portion of the first recess; the outer deposition ring has a collar portion, an upper flat portion, a second recess and a second lip, and the upper flat portion is disposed on the sleeve Above the ring portion and extending radially inward from the collar portion, the second recess extends inward from the upper flat portion, and the second lip extends upward from the innermost portion of the second recess; the plurality of shields The configuration is arranged around a plurality of targets and the corresponding plurality of target materials between the rotatable shield; wherein the top portion of the tapered shield is configured to surround the lower portion of the rotatable shield, and the cone in the center The bottom portion of the shield is configured to surround the substrate support; the cover ring is configured to rest on the bottom portion of the tapered shield.

Other and further embodiments of the present disclosure are described below.

This specification provides examples of processing kits for multi-cathode processing chambers. The disclosed processing kit can advantageously minimize or eliminate cross-contamination between targets. In addition, the disclosed processing kit minimizes material deposition on chamber components outside the processing space.

In some embodiments, the multi-cathode-PVD chamber includes a plurality of cathodes or targets (eg, 5 cathodes) attached to the top adapter. Each cathode can have a DC/pulsed DC or RF target and an associated magnetron. Each cathode also has a shield, which is a long tube that does not block the line of sight from the target to the wafer. A common rotatable shield is provided in the center of the chamber, which is shared by all cathodes. Depending on the number of targets that need to be sputtered at the same time, the rotatable shield may have one or more holes, such as 1, 2 or 3 holes. The shield surrounding each target advantageously captures most of the target flux that is not directed to the wafer and may therefore fall on the wafer, thereby significantly minimizing target cross-contamination. In some embodiments, the shield material and surface treatment can be customized to suit the specific target material being sputtered, thereby improving defect performance.

FIG. 1 illustrates a schematic cross-sectional view of a multi-cathode processing chamber (processing chamber 100) according to some embodiments of the present disclosure. The processing chamber 100 includes a plurality of cathodes 102 (such as five cathodes) and a substrate support 110, the plurality of cathodes 102 are coupled to the upper part of the processing chamber 100, the processing chamber 100 has a processing kit 150, and the substrate support 110 is provided Inside the processing chamber 100 and below the plurality of cathodes 102. In some embodiments, the substrate support 110 may be a rotating base. In some embodiments, the substrate support 110 may be vertically movable.

A plurality of cathodes 102 can be used to sputter different materials on the substrate 108. In some embodiments, the substrate 108 is a structure having semiconductor materials used to manufacture integrated circuits. For example, the substrate 108 may represent a semiconductor structure including a wafer.

In some embodiments, the processing kit 150 includes a rotatable shield 106 to selectively cover one or more of the plurality of cathodes 102. The cathodes 102 are each exposed through an opening or hole 104 of a rotatable shield 106 that is disposed above the substrate 108 on the substrate support 110. In some embodiments, the rotatable shield 106 includes a single hole 104. The material from the cathode 102 may be deposited on the substrate 108 through the hole 104.

The power supply 112 can be coupled to each of the plurality of cathodes 102. The power supply 112 may include a direct current (DC), pulsed DC, or radio frequency (RF) power supply. During sputtering, the rotatable shield 106 can expose two or more of the plurality of cathodes 102 and shield the remaining cathodes 102 from cross contamination. Cross-contamination stems from the physical movement or migration of deposition material from one cathode 102 to another cathode 102. Each cathode 102 is positioned above the corresponding target 114. To sputter the selected target material, the rotatable shield 106 is rotated to expose the selected target material to be sputtered. The target 114 may be formed of any material that is desired to be sputtered onto the substrate 108. The motor 131 is coupled to the rotatable shield 106 via a shaft 132 to facilitate the rotation of the rotatable shield 106.

In some embodiments, the processing kit 150 further includes a shield 126 corresponding to each cathode 102. The shield 126 is a long tube that does not block the line of sight from the target 114 to the substrate provided on the substrate support 110. Each shield 126 includes a shield rotation 128 to provide the cathode 102 at an angle 130 of approximately 20 to 90 degrees. Different values of the angle 130 provide different uniformity distributions on the surface of the substrate. The angle 130 is measured between the plane of one of the targets 114 and the plane of the substrate support 110. In some embodiments, the angle 130 is about 30 degrees. In some embodiments, the angle 130 may be about 40 degrees. Each shield is configured to capture most of the target flux, which is not directed and therefore may fall on the substrate. In this way, the shield significantly minimizes target cross-contamination. In addition, the shield material and the surface treatment of the shield can be customized to suit a specific target material, thereby improving defect performance.

As shown in more detail in FIG. 7, each shield 126 includes a tubular body 706 having a flat end 702 and an opposite curved end 704, the flat end 702 being configured to be coupled to the corresponding cathode 102, the curved end 704 It is configured to interface with the rotatable shield 106. The opening 716 of the tubular body 706 of the shield 126 at the curved end 704 is generally approximately the same size and shape as the hole 104 in the rotatable shield 106. The tubular body 706 may have an egg-shaped cross-section along the main part thereof, from the curved end 704 to the nearly flat end 702. The cross-section of the flat end 702 smoothly decreases from an egg-shaped cross-section to a circular cross-section as indicated by 708. The tubular body 706 may include a first flange 710 near the flat end 702. In some embodiments, the circular cross-section is about 6.2 to about 6.3 inches. The first flange 710 may include a plurality of openings (such as three openings) to facilitate coupling of the shield 126 to the corresponding cathode 102 to which the specific shield 126 is attached. The tubular body 706 may further include a second flange 712 near the curved end 704. The inner surface of the shield 126 may be textured, for example, aluminum arc spraying (such as two-wire arc spraying) is used to enhance particle retention. The second flange 712 may also be textured as described above.

In some embodiments, and as shown in FIG. 7, the central axis of the circular opening in the flat end 702 of the tubular body 706 is parallel to the central axis of the egg-shaped opening in the curved end 704. In some embodiments, and as shown in FIG. 8, the central axis of the circular opening in the flat end 702 of the tubular body 706 is set at an angle to the central axis of the egg-shaped opening in the curved end 704. In some embodiments, the angle is about 10 degrees.

Returning to FIG. 1, in some embodiments, the processing kit 150 further includes a tapered shield 118, a cover ring 120, an inner deposition ring 140 and an outer deposition ring 142. As shown in FIG. 1, the top of the tapered shield 118 is configured to surround the lower portion of the rotatable shield 106, and the bottom of the tapered shield 118 is configured to surround the substrate support 110. Before the substrate 108 is moved into or out of the chamber, the substrate 108 may be moved under the tapered shield 118 provided in the lower part of the processing chamber. The cover ring 120 is provided on the top of the tapered shield 118 and surrounds the substrate 108. When the substrate support 110 moves downward, the substrate 108 may be raised by a robot arm (not shown) before the substrate 108 is moved out of the chamber.

FIG. 6 shows a cross-sectional view of the tapered shield 118 in more detail. As shown in FIG. 6, the tapered shield generally includes a top portion 602, a middle portion 604 and a bottom portion 606. The top portion 602 is substantially vertical and includes a flange 608 protruding radially outward. The flange 608 may extend horizontally outward a sufficient amount to provide a surface to rest on a chamber component supporting the tapered shield 118 (such as a wall of a processing chamber). In some embodiments, the flange 608 extends radially outward from the outer wall of the top portion 602 by about 0.810 inches. A plurality of openings 610 may be provided through the flange 608 to facilitate coupling of the tapered shield 118 to, for example, the wall of the processing chamber. The plurality of openings 610 may be equally spaced apart along the flange 608. In some embodiments, twelve openings 610 are provided and the twelve openings 610 are spaced 30 degrees between adjacent openings 610.

The middle portion 604 is substantially linear and slopes radially inward and downward from the top portion 602. The middle portion 604 may be disposed at an angle of about 110 degrees relative to the top portion 602, as measured between the top portion 602 and the radially inwardly facing surfaces of the middle portion 604.

The bottom portion 606 is substantially linear and extends vertically downward from the end of the middle portion 604 opposite to the top portion 602. The bottom portion includes a flange 612 protruding radially inward. In some embodiments, the width of the flange 612 is about 2.26 inches, and the inner diameter of the flange 612 is about 15.12 inches. In some embodiments, the thickness of the flange 612 is about 0.17 inches. In some embodiments, the flange 612 includes an inner annular lip 614 that protrudes upward from the flange 612 along the inner diameter of the flange 612. In some embodiments, the lip 614 extends about 0.04 inches above the upper surface of the flange 612. In some embodiments, the lip 614 has a width of about 0.6 inches. The inner annular lip 614 has a substantially flat upper surface, which provides a reduced contact support surface for the cover ring 120.

The top portion 602 has a diameter sufficient to surround the components in the upper region of the processing chamber, such as the rotatable shield 106 and the shield 126. The middle portion 604 has a varying diameter, which decreases from adjacent the top portion 602 to adjacent the bottom portion 606. The diameter of the bottom portion 606 is smaller than the top portion 602 and is sufficient to surround the components in the lower region of the processing chamber (such as the substrate support 110, the inner and outer deposition rings 140, 142, and the cover ring 120). For example, in some embodiments, the inner diameter of the top portion 602 is about 27.16 inches, the inner diameter of the bottom portion 606 is about 19.32 inches, and the inner diameter of the middle portion 604 is linear between the top portion 602 and the bottom portion 606. Variety.

The tapered shield 118 may be textured, for example, using aluminum arc spraying (such as two-wire arc spraying) to enhance particle retention. In some embodiments, the top portion 602 may be thicker than the middle portion 604 and the bottom portion 606. In some embodiments, the middle portion 604 may be thicker than the bottom portion 606. In some embodiments, the top portion 602 is thicker than the middle portion 604, and the middle portion 604 is thicker than the bottom portion 606. For example, in some embodiments, the top portion 602 has a thickness of about 0.52 inches, the middle portion 604 has a thickness of about 0.25 inches, and the bottom portion 606 has a thickness of about 0.17 inches.

The total height of the tapered shield 118 may be between about 8.5 to about 8.75 inches, for example about 8.64 inches. In some embodiments, the top portion 602 has a height of about 3.23 inches (measured from the top of the flange 608 to the intersection of the outer theoretical sharp corners of the top portion 602 and the middle portion 604). In some embodiments, the height of the bottom portion 606 is between about 4.5 and 4.7 inches, such as about 4.6 inches (measured from the intersection of the outer theoretical sharp corners of the bottom bottom portion 606 and the middle portion 604 of the flange 612) .

Returning to FIG. 1, the cover ring 120 may include a bottom portion 123 and a ring portion 122 that is bent upward from the bottom portion 123 and has a predetermined thickness to form a dish or a bowl on which a substrate can be provided. The ring portion 122 surrounds the upper surface of the substrate 108 and is disposed above or at the same height as the upper surface of the substrate 108. The cover ring 120 may further include an annular foot 121 extending downward from the bottom portion 123.

The cover ring 120 may also include a predetermined gap 124 and a predetermined length relative to the tapered shield 118. Therefore, when the material is deposited on the substrate 108, the material is prevented or substantially prevented from being deposited under the substrate support 110 or outside the tapered shield 118. Controlling the deposition of materials as described above advantageously prevents or reduces the diffusion of contaminants into the substrate 108 or the processing chamber. In some embodiments, the upper surface of the cover ring 120 may be textured, for example, aluminum arc spraying (such as two-wire arc spraying) is used to enhance particle retention. In some embodiments, except for the lower surface of the annular foot 121 and the radially outward bottom portion 123 of the annular foot 121, all surfaces of the cover ring 120 may be textured, thereby reducing the cover ring 120. Risk of sticking to the tapered shield 118.

The outer diameter of the cover ring 120 is smaller than the inner diameter of the bottom portion 606 of the tapered shield 118, so that the cover ring 120 can be disposed in the central opening of the tapered shield 118 and rest on the flange 612, such as on the lip. Department 614. In some embodiments, the outer diameter of the cover ring 120 is about 18.9 to about 19 inches. In some embodiments, the inner diameter of the ring portion 122 is about 18.50 to about 18.75 inches. In some embodiments, the inner diameter of the bottom portion 123 is between about 13.0 to 13.1 inches. In some embodiments, the total height of the cover ring 120 is between about 0.9 to 1.0 inches.

In some embodiments, the bottom portion 123 has a thickness of about 0.21 inches. In some embodiments, the bottom portion 123 has a flat upper surface and a first lower surface radially outward of the ring-shaped foot 121 and a second lower surface radially inward of the ring-shaped foot 121. The first lower surface radially outward defines a first thickness, and the second lower surface radially inward of the annular foot 121 defines a second thickness, wherein the first thickness is greater than the second thickness. For example, in some embodiments, the first thickness is about 0.21 inches and the second thickness is about 0.18 inches. In some embodiments, the ring-shaped foot 121 may protrude from the bottom portion 123 or from the first lower surface of the bottom portion 123 by about 0.17 inches. In some embodiments, the outer diameter of the annular foot 121 is approximately 14.92 inches, and the inner diameter is approximately 14.17 inches.

In some embodiments, the lower radially inner portion of the annular foot 121 may be disposed at a shallow point that points to a non-perpendicular angle in the radially outward direction (as indicated by 228 in FIG. 2). In some embodiments, the non-perpendicular angle is about 30 degrees from the angle perpendicular to the bottom portion 123. The inclined surface advantageously helps to position and mount the cover ring 120 on top of the outer deposition ring 142.

The inner deposition ring 140 and the outer deposition ring 142 further prevent material from being deposited under the substrate support 110. The author has discovered that the two-piece deposition ring advantageously reduces the wear caused by the stationary deposition ring. The stationary deposition ring may contact the rotating substrate 108 and/or the substrate support 110, resulting in damage and possible Particles that contaminate the chamber. In this way, the author provides an inner deposition ring 140 and an outer deposition ring 142, the inner deposition ring 140 is located on the substrate support 110 and rotates therewith, and the outer deposition ring 142 is located on the fixed chamber component.

FIG. 2 is an enlarged cross-sectional view of a part of the processing kit shown in FIG. 1. FIG. In some embodiments, the inner deposition ring 140 includes a leg portion 220, a flat portion 221, a recess 222 (such as a first recess), and a lip portion 223 (such as a first lip), and the flat portion 221 is radially inward from the leg portion 220 Extending, the recess 222 extends radially inward from the flat portion 221, and the lip 223 extends upward from the innermost portion of the recess 222. In some embodiments, the recess 222 may be formed by an inclined wall 206 that extends downwardly and inwardly to the flat bottom portion of the recess 222 that terminates at the lip 223. In some embodiments, the inner deposition ring 140 may also include a ledge at the outer periphery of the recess 222 to prevent the substrate 108 from moving from the substrate support 110 when the substrate 108 moves during the rotation of the substrate support 110 On and off.

In some embodiments, the bottom surface of the inner deposition ring 140 consists of the bottom surface of the leg portion 220, the inner wall of the leg portion 220, the first flat surface, the inwardly and downwardly inclined wall leading to the second flat surface, and the The inner wall of the inner deposition ring 140 is bounded by an upwardly inclined wall, the first flat surface is generally opposite to the flat portion 221, and the second flat surface is generally opposite to the recess 222. In some embodiments, the lowermost and innermost edge of the inner deposition ring 140 (for example, at the intersection of the second flat surface and the inner wall) is chamfered, for example, about 45 degrees.

In some embodiments, the outer diameter of the inner deposition ring 140 is about 12.7 inches to about 12.9 inches. In some embodiments, the inner diameter of the inner deposition ring 140 is about 11.4 to about 11.6 inches. In some embodiments, the inner deposition ring 140 has a width of about 0.55 to about 0.65 inches. In some embodiments, the inner deposition ring 140 has a total height of about 0.20 to about 0.3 inches. In some embodiments, the leg portion 220 of the inner deposition ring 140 has a width of about 0.75 to about 1.5 inches. In some embodiments, the inner wall of the leg portion 220 has a diameter of about 12.5 to about 12.6 inches. In some embodiments, the width of the lip 223 is about 0.05 to about 0.08 inches.

The upper surface of the inner deposition ring 140 may be textured, for example, aluminum arc spraying (such as two-wire arc spraying) is used to enhance particle retention. In some embodiments, all surfaces of the inner deposition ring 140 may be textured as described above, except for the bottom surface from the inner wall of the leg portion 220 to the inner peripheral edge relative to the flat bottom surface of the recess 222.

In some embodiments, the outer deposition ring 142 includes a collar portion 224, an upper flat portion 225, a recess 226 (such as a second recess) and a lip 227 (such as a second lip), and the upper flat portion 225 is provided on the collar portion Above 224 and radially inward from the collar portion 224, the recess 226 extends inward from the upper flat portion 225, and the lip 227 extends upward from the innermost portion of the recess 226. The collar portion 224 defines a lug that is located under the upper flat portion 225 and extends radially outward from the upper flat portion 225.

In some embodiments, the upper surface of the outer deposition ring 142 is defined between the lugs of the collar portion 224, the upper flat portion 225, the recess 226, and the lip 227. In some embodiments, and as shown in FIGS. 2 and 3, the lower surface of the outer deposition ring 142 is stepped and includes the innermost flat portion 302 (usually opposite the lip 227 and the recess 226), the middle flat portion 304 (Usually opposite the inclined surface between the recess 226 and the upper flat portion 225) and the outermost flat portion 306 (usually opposite the upper flat portion 225 and extending radially outward along the collar portion 224). The vertical wall connects the innermost flat portion 302, the middle flat portion 304, and the outermost flat portion 306 of the lower surface of the outer deposition ring 142.

In some embodiments, the outer diameter of the outer deposition ring 142 is about 14.5 to about 14.7 inches. In some embodiments, the inner diameter of the outer deposition ring 142 is about 12.1 to about 12.3 inches. In some embodiments, the outer deposition ring 142 has a width of about 1.1 to about 1.3 inches. In some embodiments, the outer deposition ring 142 has a total height of about 0.4 to about 0.6 inches. In some embodiments, the lip 227 of the outer deposition ring 142 has a width of about 0.75 to about 1.5 inches. In some embodiments, the lip 227 of the outer deposition ring 142 has a height above the recess 226 of about 0.1 to about 0.2 inches. In some embodiments, the recess 226 has a bottom flat surface of about 0.4 to about 0.6 inches extending inward from the vertical inner side wall of the lip 227. In some embodiments, the inclined wall connecting the bottom flat surface of the recess 226 to the upper flat portion 225 is upwardly at an angle of about 25 degrees to about 35 degrees, or about 30 degrees. In some embodiments, the lugs of the collar portion 224 are disposed about 0.15 to about 0.20 inches below the upper surface of the upper flat portion 225. In some embodiments, the lower surface of the loop portion 224 is disposed about 0.24 to about 0.27 inches below the lug of the loop portion 224. In some embodiments, the outermost flat portion 306 of the collar portion 224 has a length of about 0.4 inches to about 0.5 inches. In some embodiments, the middle flat portion 304 of the collar portion 224 has a length of about 0.15 to about 0.3 inches. In some embodiments, the innermost flat portion 302 of the collar portion 224 has a length of about 0.5 inches to about 0.6 inches.

The upper surface of the outer deposition ring 142 may be textured, for example, aluminum arc spraying (such as two-wire arc spraying) is used to enhance particle retention. In some embodiments, the outer deposition ring 142 is only textured between the upper surface of the lip 227 and the recess 226 up to the upper flat portion 225, but the texturing does not include the upper flat portion 225.

As shown in FIG. 2, the leg portion 220 of the inner deposition ring 140 extends into the recess 226 of the outer deposition ring 142 to form a tortuous path 250 between the inner and outer deposition rings 140, 142. In some embodiments, the leg portion 220 of the inner deposition ring 140 is vertically spaced from the recess 226 of the outer deposition ring 142 by the first gap 202 to ensure that the rotating inner deposition ring 140 does not contact the stationary outer deposition ring 142 while also ensuring splashing. The projected material will not escape into the area under the substrate support 110. In some embodiments, the first gap 202 is about 0.045 inches to about 0.055 inches. The lip 223 is vertically spaced from the substrate 108 by a second gap 204 to ensure that the inner deposition ring 140 does not contact and contaminate the substrate 108. In some embodiments, the second gap 204 is about 0.008 inches to about 0.012 inches. In some embodiments, the inner deposition ring 140 has a first inner diameter of about 11.5 inches and a first outer diameter of about 12.8 inches. In some embodiments, the outer deposition ring 142 has a second inner diameter of about 12.2 inches and a second outer diameter of about 13.7 inches to about 14.6 inches.

In some embodiments, the outer deposition ring 142 includes a plurality of features 208, and when the outer deposition ring 142 is installed in the processing chamber 100, the plurality of features 208 rest on the component 210 of the substrate support. FIG. 3 is a perspective bottom view of the deposition ring 142, showing a plurality of features 208 more clearly. As shown in FIG. 3, a plurality of features 208 protrude from the middle flat portion 304 of the lower surface of the outer deposition ring 142. In some embodiments, the plurality of features 208 are equally spaced apart from each other. In some embodiments, three features 208 are provided. In some embodiments, three features 208 are provided and are spaced 120 degrees apart from each other.

The following description of the rotatable shield 106 will be made with reference to FIGS. 4 and 5. FIG. 4 illustrates a perspective top view of the rotatable shield 106 according to some embodiments of the present disclosure. FIG. 5 shows a cross-sectional view of the rotatable shield 106 of FIG. 4 taken along the line 5-5'. In some embodiments, the rotatable shield includes a base 406, a tapered portion 402, and a collar portion 404. The tapered portion 402 extends downwardly and radially outward from the base 406, and the collar portion 404 extends from the tapered portion. The bottom of 402 extends radially outward. The hole 104 is formed in the tapered portion 402. A matching hole 408 is formed in the upper surface of the base 406 to receive the shaft 132 to facilitate the rotation of the rotatable shield 106. The matching hole 408 has a shape corresponding to the shaft 132, and the matching hole 408 is configured to transmit the rotation of the shaft 132 to the rotatable shield 106 while eliminating the possibility of the shaft 132 rotating relative to the rotatable shield 106. That is, the matching hole 408 is shaped to prevent the shaft 132 from sliding in the matching hole 408 and to prevent the shaft 132 from rotating relative to the rotatable shield 106.

As shown in FIG. 5, the base includes a plurality of holes 504, and the fixing element extends through the plurality of holes 504 to fix the rotatable shield 106 to the shaft 132. In some embodiments, the base 406 may further include a V-shaped channel 502 to provide an easy-to-manufacture and firm mounting surface for the fixing element. In some embodiments, the hole 104 is egg-shaped to correspond to the shape of the shield 126. In some embodiments, the hole 104 is defined by a first circle and a second circle that are offset from each other along a line of a tapered portion that intersects the central axis of the rotatable shield 106. The first circle is arranged closer to the outer edge of the rotatable shield 106 and has a larger diameter than the second circle. The hole is further defined by two tangent lines coupling the first and second circles to provide a smooth, continuous contour of the hole 104, for example, as shown in FIG. 4. In some embodiments, the diameter of the first circle is about 4 to about 4.1 inches, the diameter of the second circle is about 3 to about 3.1 inches, and the offset of the first and second circles is about 2.3 to about 2.4 inches. .

In some embodiments, the rotatable shield 106 may have a total height of about 11 to about 11.25 inches. In some embodiments, the rotatable shield 106 may have a maximum inner diameter of about 21 to about 21.25 inches (eg, at the bottom of the tapered portion). In some embodiments, the rotatable shield 106 may have a maximum outer diameter of about 24.75 to about 25 inches (eg, at the end of the flange of the tapered portion). In some embodiments, the base 406 of the rotatable shield 106 may have an outer diameter of about 6.25 to about 6.5 inches. In some embodiments, the tapered portion may be disposed at an angle of about 30 degrees to about 50 degrees, or about 35 degrees to about 45 degrees, or about 40 degrees. In some embodiments, the tapered portion may have a thickness of about 0.25 to about 0.5 inches or about 0.3 inches. The inner surface of the rotatable shield 106 may be textured, for example, using aluminum arc spraying (such as two-wire arc spraying) to enhance particle retention. In some embodiments, all surfaces of the rotatable shield 106 may be textured as described above, except for the V-shaped channel 502 and all surfaces above the V-shaped channel 502.

Although the foregoing description is directed to the embodiments of the present disclosure, other and further embodiments disclosed in the present disclosure can be designed without departing from the basic scope of the present disclosure.

<p>100Processing chamber</p><p>102Cathode</p><p>104hole</p><p>106Rotating shield</p><p>108Substrate</p><p>110Substrate support</p><p>112Power supply</p><p>114Target</p><p>118Conical shield</p><p>120Cover ring</p><p>121Annular foot</p><p>122ring part</p><p>123Bottom part</p><p>124Gap</p><p>126Shield</p><p>128Shield rotation</p><p>130Angle</p><p>131Motor</p><p>132Axis</p><p>140Internal deposition ring</p><p>142Outer deposition ring</p><p>150Treatment Kit</p><p>202First gap</p><p>204Second gap</p><p>206Sloping wall</p><p>208Features</p><p>210Parts</p><p>220Legs</p><p>221Flat part</p><p>222Concave</p><p>223Lip</p><p>224ring part</p><p>225Upper flat part</p><p>226Concave</p><p>227Lip</p><p>250Circular Path</p><p>302The innermost flat part</p><p>304The middle flat part</p><p>306The outermost flat part</p><p>402Conical part</p><p>404ring part</p><p>406Base</p><p>408Matching hole</p><p>502V-shaped channel</p><p>504Hole</p><p>602Top part</p><p>604Middle part</p><p>606Bottom part</p><p>608Flange</p><p>610Open</p><p>612Flange</p><p>614Lip</p><p>702Flat end</p><p>704Bent end</p><p>706Tube body</p><p>710First flange</p><p>712Second flange</p><p>716Open</p>

The embodiments of the present disclosure have been briefly summarized above, and are discussed in more detail below, which can be understood by referring to the exemplary embodiments of the present disclosure illustrated in the accompanying drawings. However, the attached drawings only illustrate typical embodiments of the present disclosure, and since the present disclosure may allow other equivalent embodiments, the attached drawings are not regarded as limiting the scope of the present disclosure.

FIG. 1 illustrates a cross-sectional view of a multi-cathode processing chamber according to some embodiments of the present disclosure.

FIG. 2 is an enlarged cross-sectional view of the deposition ring of the multi-cathode processing chamber of FIG. 1. FIG.

Figure 3 illustrates a perspective bottom view of a deposition ring according to some embodiments of the present disclosure.

Figure 4 illustrates a perspective top view of a rotatable shield according to some embodiments of the present disclosure.

Fig. 5 shows a cross-sectional view of the rotatable shield of Fig. 4 taken along the line 5-5'.

FIG. 6 is a cross-sectional view of the tapered shield of the multi-cathode processing chamber of FIG. 1.

FIG. 7 illustrates a cross-sectional view of the shield of the multi-cathode processing chamber of FIG. 1 according to some embodiments of the present disclosure.

FIG. 8 illustrates a cross-sectional view of another shield of the multi-cathode processing chamber of FIG. 1 according to some embodiments of the present disclosure.

For ease of understanding, where possible, the same numbers are used to represent the same elements in the drawings. For clarity, the drawings are not drawn to scale and may be simplified. The elements and features in one embodiment can be advantageously used in other embodiments without repeating them.