Embedded display touch structure

Embedded display touch structure

This creation is about a structure of a display screen with a touch panel, especially an embedded display touch structure.

Modern consumer electronic devices are often equipped with touch panels as one of their input devices. Touchpads can be classified into resistive, capacitive, sonic, and optical based on different sensing principles.

The conventional touch-sensitive flat-panel display directly superimposes the touch panel and the flat-panel display up and down. Because the superimposed touch panel is a transparent panel, the image can penetrate the superimposed touch panel to display the image. Then use the touch panel as the input medium or interface. However, this conventional technique requires the full weight of a touch panel to be added when superimposing, which greatly increases the weight of the flat-panel display, which does not meet the current market's requirements for thin, thin and short displays. When directly stacking the touch panel and the flat-panel display, not only the thickness of the touch panel itself is increased, and the light transmittance is reduced, but also the reflectance and haze are increased, which greatly reduces the quality of the screen display.

In view of the aforementioned shortcomings, the touch-sensitive flat panel display is changed to embedded Touch technology. The current main development direction of embedded touch technology can be divided into two technologies: On-Cell and In-Cell. On-Cell technology is to fabricate the sensing electrode (Sensor) of projected capacitive touch technology on the back of the color filter (CF) of the panel (that is, attach the polarizing plate surface), and integrate it into the structure of the color filter . In-Cell technology puts the sensing electrode (Sensor) into the structure of the LCD Cell. Currently, the main sensing methods used can also be divided into three types: resistive (contact) type, capacitive type and optical type. Among them, the resistive type uses LCD Cell. The conduction of the upper and lower substrate electrodes calculates the change in voltage partial pressure to determine the contact position coordinates. On-Cell Touch's technology is to first make the sensor of the touch panel on the film, and then attach it to the glass of the upper substrate or directly The Sensor is made of transparent conductive material on the substrate.

The Out Cell Touch technology is to hang the touch panel externally on the display panel, and it is also the most common form at present; resistive, capacitive and other technologies are available, usually manufactured by another touch panel manufacturer, and then combined with the display panel. For fitting and assembly.

In-Cell Touch technology integrates touch elements into the display panel, so that the display panel itself has touch functions, so there is no need to perform additional processes for bonding or assembling the touch panel. This technology is usually Developed by the panel factory.

However, regardless of In-Cell Touch technology, On-Cell Touch technology, or Out Cell Touch technology, the upper glass substrate or the lower glass substrate of the display panel is provided with a sensing electrode layer made of transparent conductive material (ITO), which not only increases the cost , It also increases the process procedure, which easily leads to a decrease in the process yield and a soaring process cost, and a stronger backlight is required due to the decrease in the aperture ratio. It will increase power consumption, which is not conducive to the low power consumption requirements of mobile devices. Therefore, there is still room for improvement in the structure of the conventional touch display panel.

The main purpose of this creation is to provide an embedded display touch structure, which can greatly save material costs and processing costs; because there is no need to provide a sensing electrode layer made of transparent conductive material (ITO) on the upper glass substrate or the lower glass substrate of the display panel According to this, the cost can be reduced, and the manufacturing process can be reduced.

According to one of the features of this creation, this creation proposes an in-cell display touch structure, which includes an upper substrate, a lower substrate, a thin film transistor and a sensing electrode layer. The upper substrate and the lower substrate are arranged in parallel pairs to sandwich a display material layer between the two substrates. The thin film transistor and the sensing electrode layer are located on the surface of the lower substrate on the side of the display material layer, wherein the thin film transistor and the sensing electrode layer have a gate drive line sublayer and a source drive line Floor. The gate driving line sublayer has a plurality of gate driving lines and a plurality of connecting line segments, the plurality of gate driving lines are arranged according to a first direction, and the plurality of connecting line segments are arranged according to a second direction, The plurality of connecting line segments in the second direction are separated by the plurality of gate driving lines. The source driving line sublayer is located on the surface of the gate driving line sublayer opposite to the surface of the display material layer, and has a plurality of source driving lines, a plurality of sensing conductor lines, and a plurality of sensing conductor line segments. The plurality of source driving lines are arranged according to the second direction, the plurality of sensing conductor lines are arranged according to the second direction, and are parallel to the plurality of source driving lines, and the plurality of sensing conductor line segments are arranged according to the first Direction setting, the first A plurality of inductive conductor line segments in one direction are separated by the plurality of source drive lines and the plurality of inductive conductor lines; among them, part of the plurality of inductive conductor line segments are electrically connected with part of the connecting line segments to form a plurality of Inductive conductor block in the first direction.

According to another feature of this creation, this creation proposes an in-cell display touch structure, which includes an upper substrate, a lower substrate, a thin film transistor and a sensing electrode layer. The upper substrate and the lower substrate are arranged in parallel pairs to sandwich a display material layer between the two substrates. The thin film transistor and the sensing electrode layer are located on the surface of the lower substrate on the side of the display material layer, and drive the corresponding pixel driving circuit according to a display pixel signal and a display driving signal. The thin film transistor The crystal and sensing electrode layer has a gate driving line sublayer and a source driving line sublayer. The gate drive line sublayer has a plurality of gate drive lines, a plurality of inductive conductor lines and a plurality of inductive conductor line segments, the plurality of gate drive lines are arranged according to a first direction, and the plurality of inductive conductor lines are arranged according to The first direction is arranged and parallel to the plurality of gate drive lines, the plurality of inductive conductor line segments are arranged according to a second direction, and the plurality of inductive conductor line segments in the second direction are controlled by the plurality of gate drive lines And the plurality of inductive conductor lines. The source driving line sublayer is located on the surface of the gate driving line sublayer opposite to the surface of the display material layer, and has a plurality of source driving lines and a plurality of connecting line segments, the plurality of source driving lines Is set according to the second direction, the plurality of connecting line segments are set according to the first direction, and the plurality of connecting line segments in the first direction are separated by the plurality of source driving lines; wherein, part of the plural Inductive conductor line segment and part of the connecting line segment Air connection to form a plurality of inductive conductor blocks in the second direction.

<p>100In-cell touch display panel structure</p><p>110Upper substrate</p><p>120Lower substrate</p><p>130Display material layer</p><p>140Shading layer</p><p>150Thin film transistor and sensing electrode layer</p><p>160Color filter</p><p>170Protection layer</p><p>180Common electrode layer</p><p>190First polarizing layer</p><p>200Second Polarizing Layer</p><p>151Transistor</p><p>250Shading light bar</p><p>260area</p><p>310Gate drive line sublayer</p><p>320Gate drive line</p><p>330Connecting line segment</p><p>331The first extension</p><p>333Second Extension</p><p>410source drive line sublayer</p><p>420Source drive line</p><p>430Induction conductor line segment</p><p>440Induction conductor wire</p><p>431The first extension</p><p>433Second Extension</p><p>510Through hole</p><p>520Induction conductor block</p><p>710Insulation layer</p><p>420-1, 420-2,..., 420-MSource drive line</p><p>440-1, 440-2,..., 440-MInduction conductor wire</p><p>60-1, 60-2,..., 60-MWiring</p><p>80-1, 80-2routing</p><p>520-1, 520-2,..., 520-NInductive conductor block</p><p>70-1, 70-2,..., 70-N routing</p><p>101side</p><p>600Flexible circuit board</p><p>610Control circuit</p><p>900Embedded display touch structure</p><p>930Display material layer</p><p>950Thin film transistor and sensing electrode layer</p><p>960Cathode layer</p><p>970Anode layer</p><p>931hole transmission sublayer</p><p>933Light-emitting layer</p><p>935 electron transport sublayer</p><p>951Pixel drive circuit</p><p>9511Gate</p><p>9513Drain/Source</p><p>9515Drain/Source</p><p>971Anode pixel electrode</p><p>1010Gate drive line sublayer</p><p>1110Source drive line sublayer</p><p>440Induction conductor wire</p><p>1300Embedded display touch structure</p><p>933-1Red light-emitting layer</p><p>933-2Blue light-emitting layer</p><p>933-3Green light-emitting layer</p>

FIG. 1 is a schematic diagram of a stack of an embodiment of an in-cell display touch structure of the present invention.

Figure 2 is a schematic diagram of a conventional light shielding layer.

Figure 3 is a schematic diagram of the gate drive line sub-layer of the author.

Figure 4 is a schematic diagram of the source drive line sublayer of the author.

Figure 5 is a schematic diagram of the electrical connection between the induction conductor line segment and the connecting line segment of this creation.

Fig. 6 is a schematic diagram of the electrical connection between the scan line sub-layer and the data line sub-layer of the present creation.

7A and 7B are cross-sectional views at A-Aand B-Bin FIG. 6.

Figure 8 is a schematic diagram of the induction conductor of this creation.

Figure 9 is another schematic diagram of the induction conductor of the present invention.

FIG. 10 is a schematic diagram of a stack of another embodiment of an in-cell display touch structure of the present invention.

Figure 11 is another schematic diagram of the gate drive line sub-layer of this creation.

Figure 12 is another schematic diagram of the source drive line sub-layer of this creation.

Figure 13 is another schematic diagram of the induction conductor of this creation.

This creation is about an embedded display touch structure. FIG. 1 is a schematic view of the stack of an embodiment of an in-cell display touch structure of this invention. As shown in FIG. 1, the in-cell touch display panel structure 100 includes an upper substrate 110. Lower substrate 120, a display material layer 130, a black matrix 140, a thin film transistor and sensing electrode layer 150, a color filter 160, and an over coat 170 , A common electrode layer (Vcom) 180, a first polarizer (upper polarizer) 190, and a second polarizer (lower polarizer) 200.

The upper substrate 110 and the lower substrate 120 are preferably glass substrates, and the upper substrate 110 and the lower substrate 120 are arranged in a parallel paired configuration to sandwich the display material layer 130 between the two substrates 110, 120. In this embodiment, the display material layer 130 is a liquid crystal layer.

The black matrix 140 is located on the side of the upper substrate 110 facing the display material layer 130, and the black matrix 140 is composed of a plurality of light-shielding bars.

Figure 2 is a schematic diagram of a conventional light shielding layer. As shown in FIG. 2, the conventional light-shielding layer 140 is composed of lines of opaque black insulating material to form a plurality of light-shielding stripes 250, and the plurality of light-shielding stripes 250 of the black insulating material are arranged perpendicular to each other on the conventional light-shielding layer 140. Therefore, the conventional light-shielding layer 140 is also called a black matrix. A color filter is distributed in the area 260 between the lines of the black insulating material.

The conventional thin film transistor layer (TFT) is located on the surface of the lower substrate 120 on the same side as the display material layer 130. The conventional thin film transistor layer is composed of thin film transistor 151 and transparent electrodes.

In this creation, a plurality of inductive conductor lines, a plurality of inductive conductor line segments, and a plurality of connecting line segments are set on the conventional thin film transistor layer (TFT). Air connection to form a plurality of inductive conductor blocks in the first direction (X), and a plurality of inductive conductor lines to form a plurality of inductive conductor lines in the second direction (Y) to form the thin film transistor and induction of this creation The electrode layer 150, in this way, there is no need to provide a sensing electrode layer made of transparent conductive material (ITO) on the upper glass substrate or the lower glass substrate of the LCD display panel, thereby reducing costs, reducing process procedures, improving process yield, and reducing manufacturing processes cost. In this case, the thin film transistor and the sensing electrode layer 150 are located on the surface of the lower substrate 120 facing the display material layer 130. Wherein, the thin film transistor and sensing electrode layer 150 has a gate driving line sub-layer and a source driving line sub-layer.

FIG. 3 is a schematic diagram of the gate drive line sub-layer 310 of the present creation. The gate driving line sub-layer 310 has a plurality of gate driving lines 320 and a plurality of connecting line segments 330. The plurality of gate driving lines 320 are arranged according to a first direction (X). The connecting line segments 330 are arranged according to a second direction (Y), and the connecting line segments 330 in the second direction are separated by the gate driving lines 320. Wherein, the plurality of connecting line segments 330 in the second direction respectively have a first extension portion 331 and a second extension portion 333 in the first direction (X). Wherein, the first direction (X) is substantially perpendicular to the second direction (Y).

FIG. 4 is a schematic diagram of the source driving line sub-layer 410 of the present invention. The source driving line sub-layer 410 is located on the surface of the gate driving line sub-layer 310 facing the side of the display material layer 130, and it has a plurality of source driving lines 420 , A plurality of inductive conductor line segments 430, and a plurality of inductive conductor lines 440, the plurality of source drive lines 420 are arranged according to the second direction (Y), the plurality of inductive conductor lines 440 are arranged according to the second direction (Y ) Arranged in parallel to the plurality of source driving lines 420, the plurality of inductive conductors The body line segment 430 is arranged according to the first direction (X), and the plurality of sensing conductor line segments 430 in the first direction are separated by the plurality of source driving lines 420 and the plurality of sensing conductor lines 440. Wherein, the plurality of sensing conductor line segments 430 in the first direction respectively have a first extension 431 and a second extension 433 in the second direction (Y).

The positions of the plurality of sensing conductor line segments 430 and the plurality of connecting line segments 330 are set according to the positions corresponding to the positions of the plurality of gate driving lines 320, the plurality of source driving lines 420, and the plurality of sensing conductor lines 440 . A part of the plurality of inductive conductor line segments 430 is electrically connected to a part of the connecting line segment 330 to form a plurality of inductive conductor blocks in the first direction (X). Wherein, each of the plurality of inductive conductor blocks in the first direction is a quadrilateral area with a mesh shape. The quadrangular area is preferably rectangular.

FIG. 5 is a schematic diagram of the electrical connection between the induction conductor line segment 430 and the connecting line segment 330 of the invention. The connecting line segment 330 and the sensing conductor line segment 430 are respectively located in different layers, and the extension portions 331, 333, 431, and 433 are partially overlapped, so they can be electrically connected through a via 510 to form a plurality of A sensing conductor block 520 in the first direction (X).

The plurality of connecting line segments 330, the plurality of inductive conductor line segments 430, and the plurality of inductive conductor lines 440 are made of metal conductive materials. Wherein, the metal conductive material is one of the following: chromium, barium, aluminum, silver, copper, titanium, nickel, tantalum, cobalt, tungsten, magnesium (Mg), calcium (Ca), potassium (K), lithium ( Li), indium (In), alloys made with the above materials, lithium fluoride (LiF), magnesium fluoride (MgF2), lithium oxide (LiO).

FIG. 6 is a schematic diagram of the electrical connection between the scan line sub-layer 310 and the data line sub-layer 410 of the present creation. It is a schematic view when viewed from the direction of the upper substrate 110 to the direction of the lower substrate 120. As shown in FIG. 6, the line width of the plurality of sensing conductor line segments 430 in the first direction is the same as the line width of the gate drive line 320, and the line width of the plurality of connecting line segments 330 in the second direction is the same as that of the source. The line width (d1) of the driving line 420 plus the line width (d2) of the sensing conductor line 440 plus the distance (d3) between the source driving line 420 and the sensing conductor line 440 are the same. At the ellipse C, since there is a distance (d3) between the source driving line 420 and the sensing conductor line 440, the connecting line segment 330 can be seen.

Since in the liquid crystal display, the positions of the light-shielding bars 250 of the light-shielding layer 140 are set according to the positions of the gate driving lines 320 and the source driving lines 420 to allow the light-shielding The plurality of light-shielding bars 250 of the layer 140 cover the plurality of gate driving lines 320, the plurality of source driving lines 420, and the plurality of sensing conductor lines 440. In other embodiments, the line width of the plurality of sensing conductor line segments 430 in the first direction may be smaller than the line width of the gate drive line 320, and the line width of the plurality of connecting line segments 330 in the second direction may be greater than that of the source The line width (d1) of the driving line 420 plus the line width (d2) of the sensing conductor line 440 plus the distance (d3) between the source driving line 420 and the sensing conductor line 440 is small.

In this creation, the positions of the plurality of connecting line segments 330 in the second direction are the same as the positions of the source driving line 420 and the sensing conductor line 440, but they are on different layers. Similarly, the positions of the plurality of sensing conductor line segments 430 in the first direction are the same as the positions of the gate driving lines 320, but they are on different layers. The conventional gate drive lines and source drive lines are located on the upper and lower sides of the light-shielding bar. In this creation, the plurality of connecting line segments 330 in the second direction and the plurality of sensing conductor line segments 430 in the first direction are arranged on the plurality of gate driving lines 320, the plurality of source driving lines 420 and the plurality of The corresponding positions of the sensing conductor lines 440, that is, the positions of the plurality of light-shielding bars 250 of the light-shielding layer 140 are based on the plurality of gate driving lines 320, the plurality of source driving lines 420, and the plurality of sensing lines. The positions of the conductor lines 440 are correspondingly arranged. Therefore, the plurality of sensing conductor line segments 330 in the second direction and the plurality of sensing conductor line segments 430 in the first direction are also covered by the plurality of light-shielding bars 250. That is, when looking from the direction of the upper substrate 110 to the direction of the lower substrate 120, the plurality of sensing conductor line segments 430 in the first direction, the plurality of connecting line segments 330 in the second direction, the gate driving line 320, the source The electrode driving line 420 and the sensing conductor line 440 will be covered by the light-shielding bar 250 and will not be seen by the user.

7A and 7B are cross-sectional views at A-Aand B-Bin FIG. 6. As shown in FIG. 7A, there is an insulating layer 710 between the gate driving line 320 and the second extension 433 in the second direction. The second extending portion 433 in the second direction is electrically connected to the first extending portion 331 in the first direction and the second extending portion 333 in the first direction through a via 510. There is an insulating layer 710 between the gate driving line 320 and the source driving line 420.

From the description of FIGS. 3, 4, 5, 6, 7A and 7B, it can be seen that a plurality of inductive conductor segments 430 and a plurality of connecting line segments 330 in the second direction can form a plurality of inductive conductor blocks in the first direction (X) 520, and cooperate with the plurality of inductive conductor lines 440 as a plurality of inductive conductors in the second direction (Y) Lines can be formed with sensing conductor blocks in the first direction (X) and sensing conductor lines in the second direction (Y), so that the touch or proximity of a finger or an object can be detected.

FIG. 8 is a schematic diagram of the induction conductor of the present invention, which has a plurality of induction conductor blocks 520 in the first direction (X) and a plurality of induction conductor lines 440 in the second direction (Y). The plurality of inductive conductor lines 440-1, 440-2,..., 440-M in the second direction (Y) extend into the inside via the traces 60-1, 60-2,..., 60-M One side 101 of the in-display touch structure 100 is further connected to a control circuit 610 of a flexible circuit board 600. The plurality of inductive conductor blocks 520-1, 520-2,..., 520-N in the first direction (X) extend to the The side 101 of the embedded display touch structure 100 is further connected to the control circuit 610 of the flexible circuit board 600.

Since the positions of the plurality of sensing conductor line segments 430 and the plurality of connecting line segments 330 in the second direction are relative to the gate driving line 320, the source driving line 420, and the sensing conductor line 440, the plurality of lines formed The positions of the sensing conductor blocks 520-1, 520-2,..., 520-N in the first direction (X) are relative to the gate drive line 320, the source drive line 420, and the sensing conductor line 440, so It is covered by a plurality of light-shielding bars 250, so the light transmittance is not affected.

Each induction conductor block 520-1, 520-2, ..., 520-N forms a mesh-like quadrilateral area, and the elongated metal induction wire in each quadrilateral area is electrically connected to Together, but there is no connection between any two quadrangular areas.

The control device 610 is connected to the plurality of gate drive lines 320, the plurality of source drive lines 420, and the plurality of sensing conductors in the first direction Block 520, and the plurality of second-direction sensing conductor lines 440, during sensing, the control device 610 provides the touch driving signal, through the plurality of second-direction sensing conductor lines 440 and the first The sensing conductor block 520 of the direction senses whether an external object approaches.

Figure 9 is another schematic diagram of the induction conductor of this creation. The main difference between Figure 9 and Figure 8 is that: The wires 60-1, 60-2, and 60-3 are electrically connected, and then extend from a wire 80-1 to a side 101 of the in-cell display touch structure 100 to further connect to the control of a flexible circuit board 600 Circuit 610. That is, a plurality of sensing conductor lines 440 in the second direction can be electrically connected in advance for use as a sensing electrode. This can increase the sensing area of a single sensing electrode and increase the sensing power of a single sensing electrode, so that the control The device 610 is easy to detect touches.

The color filter layer 160 is located on the surface of the light shielding layer 140 opposite to the display material layer 130. The common electrode layer 180 is located between the upper substrate 110 and the lower substrate 120. The first polarizing layer 190 is located on the surface of the upper substrate 110 opposite to the other side of the display material layer 130. The second polarizing layer 200 is located on the surface of the lower substrate 120 opposite to the display material layer 130.

FIG. 10 is a schematic view of a stack of another embodiment of the present invention, which is a schematic view of a stack of an in-cell display touch structure 900. As shown in FIG. As shown in the figure, the in-cell display touch structure 900 includes an upper substrate 110, a lower substrate 120, a display material layer 930, a black matrix 140, a thin film transistor and sensing electrode layer 950, and a color Filter layer (color filter) 160, an over coat 170, a cathode layer 960, and an anode layer 970.

The main difference between FIG. 10 and FIG. 1 is the display material layer 930, the cathode layer 960, the anode layer 970, and the thin film transistor layer 950.

The upper substrate 110 and the lower substrate 120 are preferably glass substrates or plastic substrates. The upper substrate 110 and the lower substrate 120 are arranged in a parallel pair and sandwich the display material layer 140 between the two substrates 110, 920. Among them, the display material layer 930 is preferably composed of an organic light emitting diode.

In this embodiment, a plurality of inductive conductor line segments 430, a plurality of inductive conductor lines 440, and a plurality of connecting line segments 330 are arranged on the thin film transistor layer. Part of the plurality of inductive conductor line segments 430 and part of the connecting line segments 330 are electrically connected to each other. Connect to form a plurality of sensing conductor blocks 520 in the first direction (X), and use the plurality of sensing conductor lines 440 to form a plurality of sensing conductor lines in the second direction (Y) to form the thin film transistor of the present invention And the sensing electrode layer 950, in this way, there is no need to provide a sensing electrode layer made of a transparent conductive material on the upper glass substrate or the lower glass substrate of the display panel, thereby reducing costs, reducing process procedures, improving process yield and reducing process costs.

The details of the plurality of inductive conductor line segments 430, the plurality of inductive conductor lines 440, and the plurality of connecting line segments 330 are as disclosed in the first embodiment and FIGS. 3 to 8, for those skilled in the art based on the first embodiment of the present invention. The disclosure of the embodiment can be completed, so it will not be repeated.

The thin film transistor and the sensing electrode layer 950 are located on the surface of the lower substrate 120 facing the display material layer 930. The thin film transistor and the sensing electrode layer 950 have a plurality of gate drive lines (not shown) and a plurality of gate drive lines (not shown). source Polar drive lines (not shown), a plurality of first conductor blocks arranged along the first direction (X), the plurality of sensing conductor lines 440 arranged along the second direction (Y), and a plurality of pixels The driving circuit 951, each pixel driving circuit 951 corresponds to a pixel, and is used to drive the corresponding pixel driving circuit 951 according to a display pixel signal and a display driving signal to perform display operations.

Depending on the design of the pixel drive circuit 951, for example, 2T1C is a pixel drive circuit designed by 2 thin film transistors and 1 storage capacitor, and 6T2C is a pixel drive circuit designed by 6 thin film transistors and 2 storage capacitors. At least one gate 9511 of a thin film transistor in the pixel drive circuit 951 is connected to a gate drive line (not shown). Depending on the design of the drive circuit, there is at least one drain/source 9513 of the thin film transistor in the control circuit. Connected to a source driving line (not shown), the drain/source 9515 of at least one thin film transistor in the pixel driving circuit 951 is connected to a corresponding anode pixel electrode 971 in the anode layer 970.

The cathode layer 960 is located on the surface of the upper substrate 110 facing the display material layer 930. At the same time, the cathode layer 960 is located between the upper substrate 110 and the display material layer 930. The cathode layer 960 is formed of a metal conductive material. Preferably, the cathode layer 960 is formed of a metal material with a thickness of less than 50 nanometers (nm), and the metal material is selected from one of the following groups: aluminum (Al), silver (Ag), magnesium (Mg) ), Calcium (Ca), Potassium (K), Lithium (Li), Indium (In), the alloy of the above materials or use lithium fluoride (LiF), magnesium fluoride (MgF2), lithium oxide (LiO) and Al combination Become. Since the thickness of the cathode layer 960 is less than 50 nm, the light generated by the display material layer 930 can still penetrate the cathode layer 960 to display an image on the upper substrate 110. The cathode layer 960 is electrically connected to the whole piece, Therefore, it can be used as a shielding. At the same time, the cathode layer 960 also receives the current from the anode pixel electrode 971.

The anode layer 970 is located on the side of the thin film transistor and the sensing electrode layer 950 opposite to the display material layer 930. The anode layer 970 has a plurality of anode pixel electrodes 971. Each anode pixel electrode of the plurality of anode pixel electrodes 971 corresponds to a pixel driving transistor of the pixel driving circuit 951 of the thin film transistor and the sensing electrode layer 950, that is, the plurality of anode pixels Each anode pixel electrode of the electrode is connected to the source/drain of the pixel driving transistor of the corresponding pixel driving circuit 951 to form a pixel electrode of a specific color, such as red pixel electrode, green pixel electrode Pixel electrode, or blue pixel electrode or white pixel electrode used in this case.

The display material layer 930 includes a hole transporting layer (HTL) 931, an emitting layer (emitting layer) 933, and an electron transporting layer (HTL) 935. The display material layer 930 preferably generates white light, and is filtered by the color filter 160 to generate the three primary colors of red, blue, and green.

Figure 11 is another schematic diagram of the gate drive line sub-layer of this creation. Figure 12 is another schematic diagram of the source drive line sub-layer of this creation. The difference between the gate drive line sublayer 1010 of FIG. 11 and the source drive line sublayer 1110 of FIG. 12 and the gate drive line sublayer 310 of FIG. 3 and the source drive line sublayer 410 of FIG. 4 is: The plurality of sensing conductor lines 440 in FIG. 12 are removed to form the source driving line sublayer 1110 of FIG. 12, and the plurality of sensing conductor lines 340 are disposed on the gate driving line sublayer 310 of FIG. 3 to form FIG. 11 The gate drive line sublayer 1010.

That is, the gate driving line sublayer 1010 has a plurality of gate driving lines 320, a plurality of sensing conductor lines 340, and a plurality of sensing conductor line segments 330, and the plurality of gate driving lines 320 are arranged according to a first direction, The plurality of sensing conductor lines 340 are arranged according to the first direction and parallel to the plurality of gate drive lines 320, and the plurality of sensing conductor line segments 330 are arranged according to a second direction. The conductor line segment 330 is separated by the plurality of gate driving lines 320 and the plurality of sensing conductor lines 340.

The gate driving line sub-layer 1010 of FIG. 11 and the source driving line sub-layer 1110 of FIG. 12 can also be respectively applied to the display material layer being composed of liquid crystal or the display material layer being composed of organic light emitting diodes. The details of the situation are as disclosed in the first embodiment and FIGS. 3 to 8, which can be accomplished by those who are familiar with the technology based on the disclosure of the first embodiment of the present creation, so it will not be repeated.

FIG. 13 is a schematic view of a stack of another embodiment of the present invention, which is a schematic view of a stack of an in-cell display touch structure 1300. As shown in the figure, the in-cell display touch structure 1300 includes an upper substrate 110, a lower substrate 120, a display material layer 930, a thin film transistor and sensing electrode layer 950, a cathode layer 960, and an anode layer 970. The main difference between FIG. 13 and FIG. 10 is that: in FIG. 13, a red light-emitting layer 933-1, a blue light-emitting layer 933-2, and a green light-emitting layer 933-3 are used, so there is no need to use a black matrix 140, a A color filter 160 and an over coat 170 are provided.

The electrode pad made of conventional indium tin oxide material (ITO) has an average light transmittance of only about 90%, while the original source drive line 420 or its matched sensing conductor line 440 and gate drive line 320 Or inductive conductor The line 340 and the plurality of sensing conductor blocks 520 in the first direction (X) are arranged at the relative position of the conventional gate drive line or source drive line, so the light transmittance is not affected. The average light transmittance is far better than the conventional technology. When the in-cell display touch structure of the present invention is combined with a liquid crystal display panel or an organic light emitting diode display panel, the brightness of the panels can be made brighter than the conventional technology.

It can be seen from the foregoing description that the present invention can form the sensing conductor block 520 in the first direction (X) and the sensing conductor line 440 in the second direction on the thin film transistor and the sensing electrode layer 150, or the sensing conductor line 440 in the second direction (Y). The sensing conductor block and the sensing conductor line 340 in the first direction have the advantage of not requiring a sensing electrode layer made of ITO on the upper glass substrate or the lower glass substrate of the display panel, which can reduce costs and process procedures. .

At the same time, on the mask defining a plurality of conventional gate driving lines 330, a plurality of connecting line segments 330 in the second direction of the present creation can be defined at the same time. On the mask defining a plurality of conventional source driving lines 420, a plurality of sensing conductor line segments 430 in the first direction and a plurality of sensing conductor lines 440 in the second direction of the present creation can be defined at the same time. Accordingly, no manufacturing process has been added, and the LCD panel can have a touch function without adding a new manufacturing process.

The above-mentioned embodiments are merely examples for convenience of description, and the scope of rights claimed in this creation should be subject to the scope of the patent application, rather than being limited to the above-mentioned embodiments.