Light source module

Light source module

LIGHT SOURCE MODULE

This creation is about a light source module, and especially a light source module using a light-emitting diode chip as the light source.

Light-emitting diodes have advantages such as long life, small size, high shock resistance, low heat generation, and low power consumption. Therefore, they have been widely used as indicators or light sources in households and various equipment. In recent years, light-emitting diodes have developed toward high power, so their application fields have been extended to road lighting, large outdoor billboards, traffic signal lights and related fields. In the future, light-emitting diodes may even become the main lighting source with both power saving and environmental protection functions.

Generally speaking, the light-emitting diode light source module is to arrange a plurality of light-emitting diode chips on a substrate in a matrix arrangement. However, the lateral light emitted by two adjacent light-emitting diode chips will be absorbed by each other, so that the lateral light emitted by the light-emitting diode chip cannot be effectively used, thereby reducing the cost of the light-emitting diode light source module. Light efficiency.

This creation provides a light source module with good light extraction efficiency.

The light source module of this invention includes a substrate, a plurality of first light-emitting diode chips, and at least one second light-emitting diode chip. The substrate has an upper surface. A plurality of first light emitting diode chips are arranged on the upper surface and electrically connected with the substrate. The second light emitting diode chip is disposed on the upper surface and is electrically connected to the substrate. A top surface of each first light emitting diode chip relatively far away from the upper surface of the substrate is separated from the upper surface by a first distance, and a top surface of each second light emitting diode chip relatively far away from the upper surface of the substrate is separated from the upper surface by a second distance. Distance, and the second distance is greater than each first distance.

In an embodiment of the present invention, the aforementioned substrate includes a plurality of first pads and a plurality of second pads. A plurality of first pads are embedded in the upper surface of the substrate, and a surface of each first pad is slightly aligned with the upper surface of the substrate. Each first light emitting diode chip is electrically connected to the substrate through the corresponding first pad. A plurality of second pads are disposed on the upper surface of the substrate, and the second light-emitting diode chip is electrically connected to the substrate through the corresponding second pads.

In an embodiment of the present invention, each of the above-mentioned first light emitting diode chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes. The second light emitting diode chip includes a second chip substrate, a second semiconductor layer and a plurality of second electrodes. The thickness of the second wafer substrate is greater than the thickness of each first wafer substrate, and the first electrode and the second electrode are both disposed on the upper surface of the substrate.

In an embodiment of the present invention, the thickness of the above-mentioned second wafer substrate is between 1 time and 1+Scot(θ/2)/d" times the thickness of each first wafer substrate, where S is the first The distance between a light-emitting diode chip and the second light-emitting diode chip, d" is the first crystal The thickness of the substrate, θ is the light-emitting angle of the first light-emitting diode chip.

In an embodiment of the present creation, the above-mentioned second light-emitting diode chip is located between any two adjacent first light-emitting diode chips.

In an embodiment of the present creation, the above-mentioned first light-emitting diode chip surrounds the second light-emitting diode chip.

In an embodiment of the present creation, the above-mentioned first light-emitting diode chip is a plurality of flip-chip light-emitting diode chips.

In an embodiment of the present creation, the above-mentioned second light-emitting diode chip is a flip-chip light-emitting diode chip.

In an embodiment of the present creation, the above-mentioned second distance is between 1 time and 1+Scot(θ/2)/d times of each first distance, where S is the first light-emitting diode chip and the first distance. The distance between the two light-emitting diode chips, d is the first distance, and θ is the light-emitting angle of the first light-emitting diode chip.

In an embodiment of the present invention, the side surface of the second light-emitting diode chip described above has a substance with high reflectivity.

Based on the above, the light source module of this creation uses a top surface of the second light-emitting diode chip that is relatively far away from the upper surface of the substrate and the distance from the upper surface of the substrate is greater than that of each first light-emitting diode chip that is relatively far away from the substrate. The distance between a top surface of the upper surface and the upper surface of the substrate, so that the second light emitting diode chip can effectively reflect the lateral light from the first light emitting diode chip, thereby enabling the light source module to have good light extraction efficiency.

In order to make the above-mentioned features and advantages of this creation more obvious and understandable, the following specific examples are given in conjunction with the accompanying drawings to describe in detail as follows.

<p>100, 200, 300, 400Light source module</p><p>120, 220, 320, 420substrate</p><p>120a, 220aupper surface</p><p>124First pad</p><p>124asurface</p><p>126Second pad</p><p>140, 240, 340, 440First LED chip</p><p>140a, 160a, 240a, 260aTop surface</p><p>160, 260, 360, 460Second LED chip</p><p>242First chip substrate</p><p>244First semiconductor layer</p><p>244aFirst-type doped semiconductor layer</p><p>244bSecond type doped semiconductor layer</p><p>244cFirst light-emitting layer</p><p>246First electrode</p><p>262Second chip substrate</p><p>264Second semiconductor layer</p><p>266Second electrode</p><p>264aType III doped semiconductor layer</p><p>264bType IV doped semiconductor layer</p><p>264cSecond luminescent layer</p><p>d1, d1'first distance</p><p>d2, d2'second distance</p><p>HHeight difference</p><p>SThe distance between the first LED chip and the second LED chip</p><p>θThe light-emitting angle of the first light-emitting diode chip</p><p>d"The thickness of the first wafer substrate</p>

FIG. 1 is a schematic cross-sectional view of a light source module according to an embodiment of the present creation.

2 is a schematic cross-sectional view of a light source module according to another embodiment of the present creation.

FIG. 3 is a schematic top view of a light source module according to another embodiment of the present creation.

FIG. 4 is a schematic top view of a light source module according to still another embodiment of the present creation.

FIG. 1 is a schematic cross-sectional view of a light source module according to an embodiment of the present creation. Please refer to FIG. 1, the light source module 100 includes a substrate 120, a plurality of first light emitting diode chips 140, and at least one second light emitting diode chip 160 (only one is schematically shown in FIG. 1). The substrate 120 has an upper surface 120a. The plurality of first light-emitting diode chips 140 are disposed on the upper surface 120 a and are electrically connected to the substrate 120. The second light-emitting diode chip 160 is disposed on the upper surface 120 a and is electrically connected to the substrate 120. Each first light-emitting diode chip 140 is relatively far away from a top surface 140a of the upper surface 120a of the substrate 120 to the upper surface 120a of the substrate 120 by a first distance d1, and the second light-emitting diode chip 160 is relatively far away from the substrate 120. A top surface 160a of the upper surface 120a and an upper surface 120a of the substrate 120 are separated by a second distance d2, and the second distance d2 is greater than each first distance d1. In this way, the second light-emitting diode chip 160 can effectively reflect the lateral light from the first light-emitting diode chip 140.

Please refer to FIG. 1 again. In detail, the substrate 120 includes a plurality of first pads 124 and a plurality of second pads 126. The first pad 124 is buried in the upper surface 120a of the substrate 120, One surface 124a of each first pad 124 is slightly aligned with the upper surface 120a of the substrate 120, and each first light-emitting diode chip 140 is electrically connected to the substrate 120 through the corresponding first pad 124. The second pad 126 is disposed on the upper surface 120 a of the substrate 120, and the second light-emitting diode chip 160 is electrically connected to the substrate 120 via the second pad 126. In this embodiment, the first pad 124 can be regarded as an embedded pad, and the second pad 126 can be regarded as a general pad, which means that there is a height between the first pad 124 and the second pad 126 Bad H. The above-mentioned design of the first pad 124 and the second pad 126 can make the second distance d2 from the top surface 160a of the second light-emitting diode chip 160 to the upper surface 120a of the substrate 120 greater than that of each first light-emitting diode The first distance d1 from the top surface 140 a of the wafer 140 to the upper surface 120 a of the substrate 120. Preferably, the second distance d2 is between 1 time of each first distance d1 and 1+Scot(θ/2)/d1 times, where S is the first light-emitting diode chip 140 and the second light-emitting diode The distance between the bulk chips 160, d1 is the first distance, and θ is the light-emitting angle of the first light-emitting diode chip 140.

Furthermore, in this embodiment, the first light-emitting diode chip 140 and the second light-emitting diode chip 160 may be exactly the same light-emitting diode chip, that is, the first light-emitting diode chip 140 and the second light-emitting diode chip 140 The light emitting diode chip 160 may have the same size, size, and emit light of the same color. Therefore, the second distance d2 of this embodiment is greater than each first distance d1 through the structure of the first pad 124 and the second pad 126 of the substrate 120. Of course, this creation does not limit the structure of the first light-emitting diode chip 140 and the second light-emitting diode chip 160. In other embodiments, the first light-emitting diode chip 140 and the second light-emitting diode chip 160 are The chip 160 can be a light-emitting diode chip of different sizes, different sizes, and different colors of light. Make as much protection as you want. In addition, the substrate 120 of this embodiment may be a transparent substrate, such as a sapphire substrate. The first LED chip 140 may be a plurality of flip-chip LED chips. The second LED chip 160 may be a flip-chip LED chip.

Since there is a height difference H between the first pad 124 and the second pad 126 of the substrate 120 of this embodiment, the first light-emitting diode chip 140 and the second light-emitting diode chip 160 of the same size and size In the case that the second light-emitting diode chip 160 is relatively far away from the upper surface 120a of the substrate 120, the second distance d2 from the top surface 160a to the upper surface 120a of the substrate 120 is greater than that of each first light-emitting diode chip 140 relatively far away from the substrate The first distance d1 from the top surface 140 a of the upper surface 120 a of 120 to the upper surface 120 a of the substrate 120. In this way, the second light-emitting diode chip 160 can effectively reflect the lateral light from the first light-emitting diode chip 140, so that the light source module 100 has good light extraction efficiency.

It must be noted here that the following embodiments use the element numbers and part of the content of the foregoing embodiments, wherein the same numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

2 is a schematic cross-sectional view of a light source module according to another embodiment of the present creation. Please refer to FIG. 2. The light source module 200 of this embodiment is similar to the light source module 100 of FIG. 1, except that the first light emitting diode chip 240 and the second light emitting diode chip 260 of this embodiment Have different structure types.

In detail, each first light emitting diode chip 240 of this embodiment includes a first chip substrate 242, a first semiconductor layer 244, and a plurality of first electrodes 246. The first semiconductor layer 244 is composed of a first type doped semiconductor layer 244a, a second type doped semiconductor layer The layer 244b and a first light-emitting layer 244c are composed of the first light-emitting layer 244c between the first-type doped semiconductor layer 244a and the second-type doped semiconductor layer 244b. The second light emitting diode chip 260 includes a second chip substrate 262, a second semiconductor layer 264 and a plurality of second electrodes 266. The second semiconductor layer 264 is composed of a third type doped semiconductor layer 264a, a fourth type doped semiconductor layer 264b, and a second light emitting layer 264c, wherein the second light emitting layer 264c is interposed between the third type doped semiconductor layer Between the layer 264a and the fourth type doped semiconductor layer 264b. As shown in FIG. 2, the thickness of the second wafer substrate 262 is greater than the thickness of each first wafer substrate 242, and the first electrodes 246 and the second electrodes 266 are all disposed on the upper surface 220 a of the substrate 220. In other words, the present embodiment utilizes the difference in thickness between the first wafer substrate 242 and the second wafer substrate 262 to make the second distance d2' greater than the first distance d1'. Preferably, the thickness of the second wafer substrate 262 is between 1 time and 1+Scot(θ/2)/d" times the thickness of each first wafer substrate 242, where S is the first light emitting diode The distance between the chip 240 and the second LED chip 260, d" is the thickness of the first chip substrate 242, and θ is the light output angle of the first LED chip 240.

Since the first light-emitting diode chip 240 and the second light-emitting diode chip 260 of this embodiment have different thicknesses of the first chip substrate 242 and the second chip substrate 262, the second light-emitting diode chip 260 is relatively far away from the substrate. The second distance d2' from the top surface 260a of the upper surface 220a of the upper surface 220a of the substrate 220 to the upper surface 220a of the substrate 220 is greater than the upper surface 240a of each first light emitting diode chip 240 relatively far from the upper surface 220a of the substrate 220 to the upper surface of the substrate 220. The first distance d1' of the surface 220a. In this way, the second light-emitting diode chip 260 can effectively reflect the lateral light from the first light-emitting diode chip 240, so that the light source module 200 has a good light extraction efficiency.

FIG. 3 is a schematic top view of a light source module according to another embodiment of the present creation. Please refer to FIG. 3, a plurality of first light-emitting diode chips 340 and a plurality of second light-emitting diode chips 360 of the light source module 300 are arranged in a matrix on the substrate 320. In order to make the second light-emitting diode chip 360 effectively reflect the lateral light from the first light-emitting diode chip 340, the second light-emitting diode chip 360 is positioned between any two adjacent first light-emitting diode chips 340. between. As shown in FIG. 3, there are at least four second light-emitting diode chips 360 around each first light-emitting diode chip 340, which can effectively reflect the lateral light of the first light-emitting diode chip 340, and The light source module 300 has better light extraction efficiency.

FIG. 4 is a schematic top view of a light source module according to still another embodiment of the present creation. Please refer to FIG. 4, in this embodiment, the plurality of first light emitting diode chips 440 of the light source module 400 surround the second light emitting diode chip 460. In this way, the second light emitting diode chip 460 located in the center can effectively reflect the lateral light from the surrounding first light emitting diode chip 440. Alternatively, in other embodiments not shown, the first light emitting diode chips of the light source module may be arranged to form a plurality of ring structures, and the second light emitting diode chips may be arranged to form a plurality of ring structures. And these ring structures are arranged coaxially, in which the ring structure formed by the first light-emitting diode chip and the ring structure formed by the second light-emitting diode chip are alternately arranged. This is still a technical solution that can be used in this creation and does not deviate from this creation. The scope of the desired protection. In this way, the second light emitting diode chip 460 can also effectively reflect the lateral light from the first light emitting diode chip 440, so that the light source module 400 has a better light output efficiency.

In summary, because the light source module of this creation uses the second light-emitting diode chip that is relatively far away from the upper surface of the substrate, the distance from the upper surface of the substrate to the upper surface of the substrate is greater than The distance from a top surface of each first light-emitting diode chip that is relatively far from the upper surface of the substrate to the upper surface of the substrate is achieved so that the second light-emitting diode chip can effectively reflect the lateral direction from the first light-emitting diode chip The effect of light, in turn, enables the light source module to have a good light output efficiency.

In addition, if it is desired to improve the efficiency of the second light-emitting diode chip in reflecting the lateral light from the first light-emitting diode chip, the side surface of the second light-emitting diode chip can have a material with high reflectivity (not shown in the figure). Draw), this can not only slow down the absorption of the side light of the first light-emitting diode chip, so that the lateral light of the first light-emitting diode chip can be effectively reflected by the reflection, and it can also reflect the lateral direction of the second light-emitting diode itself. The light is emitted, so that the lateral light of the second light-emitting diode is more concentrated and emitted upward.

Although this creation has been disclosed in the above embodiments, it is not intended to limit this creation. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of this creation. Therefore, The scope of protection of this creation shall be subject to those defined by the attached patent scope.