EFEM system

Equipment Front End Module (EFEM) and Semiconductor Manufacturing Equipment

The present invention relates to an EFEM (Equipment Front End Module) capable of circulating the gas in the wafer transfer chamber without exposing the wafer being transferred to the outside air.

Conventionally, semiconductors have been manufactured by applying various processes to a wafer serving as a substrate. In recent years, the high integration of components and the miniaturization of circuits have been progressing, and it is required to maintain high cleanliness around the wafer in such a way that the adhesion of particles and moisture to the wafer surface does not occur. Furthermore, in order to prevent the surface properties of the wafer from changing such as oxidation, the periphery of the wafer is also brought into an inert gas, that is, a nitrogen atmosphere, or a vacuum state.

In order to properly maintain the atmosphere around the wafers, the wafers are placed in a closed container called a FOUP (Front-Opening Unified Pod) and managed inside the container. is filled with nitrogen. Furthermore, in order to transfer wafers between a processing apparatus for processing wafers and a FOUP, EFEM disclosed in Patent Document 1 below is used. EFEM is a substantially closed wafer transfer chamber formed by the inside of the frame, and has a load port (Load Port) that functions as an interface portion with FOUP on one side facing the wall surface, and is connected to the other side. Part of the processing unit is the load lock chamber. The wafer transfer chamber is provided with a wafer transfer device for transferring wafers. Using this wafer transfer device, wafers are loaded and unloaded between the FOUP connected to the load port and the load lock chamber.

That is, a wafer is taken out from a FOUP (load port) serving as one delivery position using a wafer transfer device, and transferred to a load lock chamber serving as the other delivery position. Further, in the processing apparatus, the wafers transported through the load lock chamber are processed in a processing unit called a processing chamber, and after the processing is completed, the wafers are taken out through the load lock chamber again and returned to the FOUP.

The inside of the processing apparatus is a special atmosphere such as vacuum or the like corresponding to the processing so that the processing of the wafer can be performed quickly. In addition, the inside of the wafer transfer chamber in EFEM is maintained in a clean air atmosphere of high purity by introducing air purified by chemical filters, etc., and the surface of the wafer being transferred is free of particles such as particles. contamination caused by adhesion.

[Previously known technical literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2012-49382

<p>However, in recent years, among the increasingly advanced cleaning, although the cleanliness of the wafer transfer room of EFEM is high, it is concerned about the influence of the different air atmospheres in the FOUP and the processing equipment.</p><p>That is, by being exposed to the air atmosphere, moisture and oxygen tend to adhere to the surface of the substrate, and there is a possibility that corrosion and oxidation may occur. Furthermore, when corrosive gas or the like used in the processing apparatus remains on the surface of the wafer, the wiring material on the surface of the wafer may be corroded and the yield may deteriorate. Furthermore, since the corrosive element accelerates the corrosion reaction by the presence of moisture, the presence of both corrosive gas and moisture may also cause corrosion to proceed more rapidly.</p><p>When transferring wafers, the FOUP is pressurized by injecting an inert gas, that is, nitrogen, etc., into the FOUP from the purification unit provided in the load port, so that the air atmosphere in the wafer transfer room is prevented from entering the FOUP. However, nitrogen must be continuously injected into the FOUP until the transfer of the wafers is completed. Since the injected nitrogen flows out to the wafer transfer chamber, the amount of nitrogen used increases and the cost increases.</p><p>In order to avoid this, it is considered that the inside of the wafer transfer chamber is made into a nitrogen atmosphere like the FOUP. However, if the nitrogen atmosphere is only used at the beginning of the wafer transfer, the cleanliness of the wafer transfer chamber will decrease with time. There is a possibility that particles may adhere to the surface of the wafer during the internal transport, and the influence of corrosive gases used in the processing equipment, etc., is also increased. In addition, in the case where nitrogen is constantly supplied into the wafer transfer chamber, the amount of nitrogen used is further increased, and it is not a solution to increase the cost.</p><p>In addition, the above-mentioned problems in the wafer transfer chamber also occur in the case of transferring substrates other than wafers as long as the transfer is carried out in different atmospheres from processing and storage locations.</p><p>An object of the present invention is to provide an EFEM that can effectively solve such a problem, specifically, to avoid an increase in cost, and to avoid exposing the wafer being transported to an atmosphere that causes changes in surface properties and adhesion of particles. Suppression of adhesion of particles to the wafer and management of the properties of the wafer surface can be appropriately performed.</p>

<p>In the present invention, in order to achieve such an object, the following means are employed.</p><p>That is, the EFEM of the present invention is characterized by comprising: a frame body which internally constitutes a wafer transfer chamber substantially closed by connecting a load port and a processing device to an opening provided in a wall surface; and a wafer transfer device , which is arranged in the wafer transfer chamber, and carries out the transfer of wafers between the FOUP placed in the load port and the processing device; and the gas outlet is provided on the upper part of the wafer transfer chamber, A gas is sent into the wafer transfer chamber; a gas suction port is provided in the lower part of the wafer transfer chamber to suck the gas in the wafer transfer chamber; and a gas return path is for the gas sucked from the gas suction port returning to the gas delivery port; and a filter provided at the gas delivery port to remove particles contained in the gas to be delivered; by generating downflow in the wafer transfer chamber and passing through the gas return path, the gas is removed After returning, the gas in the wafer transfer chamber is circulated.</p><p>With this configuration, by generating downdraft in the wafer transfer chamber and circulating the gas through the gas return path, it is possible to complement the wafer transfer chamber as a substantially closed space, and the wafer transfer chamber can be maintained at an appropriate level. under a gas atmosphere. Therefore, the wafer can be transported without being exposed to the outside air, and the adhesion of particles can be suppressed. Moreover, by providing a filter in a gas delivery port, it becomes possible to remove particulates while circulating a gas. Furthermore, by descending the wafer transfer chamber to generate an air flow, the particles adhering to the upper part of the wafer can be removed, and the floating of the particles in the wafer transfer chamber can be prevented. In addition, by circulating the gas to suppress the gas consumption, it becomes possible to reduce the cost.</p><p>In order to ensure a large flow path area without changing the appearance, prevent the load lock chamber from interfering with devices outside the EFEM, and suppress the increase in the number of parts and the increase in the manufacturing cost, the wall surface of the housing and the The space between the partition members on the inner side of the wall surface serves as a part of the gas return path, and the wafer transfer chamber and the gas return path are preferably configured to be separated by the partition member.</p><p>In addition, in order to effectively utilize the dead space (dead space) outside the driving area of the wafer transfer device, prevent interference with wafer transfer, and ensure the flow of gas, the opening for connecting the load port and the opening for connecting the processing device are provided. In the facing position of the frame body, the gas return path is preferably configured so as to be continuous with the gas outlet from the gas suction port via both sides of the opening connecting the processing device.</p><p>Furthermore, in order to smoothly circulate the gas flowing through the wafer transfer chamber and the gas return passage, a first air blowing means is connected to the gas delivery port, and a second air blower means is connected to the gas suction port. Preferably, the first blowing means sends gas from the gas delivery port into the wafer transfer chamber, and the second blower means sucks the gas in the wafer transfer chamber from the gas suction port.</p><p>In addition, the wafer transfer chamber is replaced with an appropriate gas atmosphere to prevent oxygen and moisture from adhering to the wafer surface, hindering wafer processing, and reducing yield, and part of the nitrogen in the wafer transfer chamber flows to the outside. In order to keep the state of the wafer transfer chamber constant by supplying the outgoing gas during the time, it is further provided with gas supply means for supplying the gas into the wafer transfer chamber, and gas supply means for discharging the gas from the wafer transfer chamber. The manner in which the gas discharge means is constituted is effective.</p><p>In addition, in order to remove molecular contaminants generated during processing in the processing apparatus and flowing into the wafer transfer chamber, a chemical filter is provided in the gas suction port, and the gas in the wafer transfer chamber passes through the chemical filter toward the wafer transfer chamber. The inflow of the gas return path is better.</p><p>In addition, in order to arrange the wafer transfer device and the gas suction port so as not to interfere with each other, and to prevent the turbulent flow of the air flow from causing particles to float, the wafer transfer device is It is better to be supported on the wall surface of the frame body.</p><p>In addition, in order to suppress changes in the properties of the wafer surface due to oxygen, moisture, etc., and prevent a decrease in yield, it is preferable to use an inert gas as the gas.</p>

<p>According to the present invention described above, it is possible to provide an EFEM that can appropriately perform: Suppression of adhesion of particles to the wafer and management of the properties of the surface of the wafer.</p>

<p>WWafer</p><p>1EFEM</p><p>1a, 4adoor</p><p>1bDrive mechanism</p><p>2Wafer handling device</p><p>2aarm</p><p>2bPedestal</p><p>3Frame</p><p>4Load port</p><p>5Controller</p><p>6Processing device</p><p>7FOUP (Front Opening Universal Container)</p><p>7aCover</p><p>8Partition member</p><p>9. 1011Wafer Handling Room</p><p>10Gas return route</p><p>11Gas outlet</p><p>12Gas suction port</p><p>13FFU (Fan Filter Unit)</p><p>13aFan (1st air supply means)</p><p>13bFilter</p><p>14Chemical filter</p><p>15Fan (second air supply means)</p><p>16Gas supply means</p><p>17Gas discharge means</p><p>18Support member</p><p>21Support</p><p>22Guide</p><p>31Front wall</p><p>31a, 32aOpening</p><p>32Back wall</p><p>33, 34Side Wall</p><p>35Top Wall</p><p>36Bottom wall</p><p>37a~37dPillar</p><p>38Top Plate</p><p>61Load Lock Room</p><p>62Transportation Room</p><p>62a, 63adoor</p><p>63Processing unit</p><p>64Transporting Robot Arm</p><p>81Partition member on upper side</p><p>81aOpening</p><p>82Partition member on lower side</p><p>82aSecond paragraph</p><p>82bMiddle</p><p>82cPart 1</p><p>82dSide panel</p><p>83Intermediate components</p><p>83aDiversion</p><p>83a1Opening</p><p>83bH word</p><p>83cOpening</p><p>132Second Supply Route</p><p>142Second Return Road</p><p>496Heater rotation control part</p><p>1001Processing device</p><p>1002Load Lock Room</p><p>1002a, 1003adoor</p><p>1003Transportation Room</p><p>1004Processing unit</p><p>1005Transporting Robot Arm</p><p>1010adoor</p><p>1012Wafer handling device</p><p>1012aGuide</p><p>1013Load port</p><p>1013adoor</p><p>1014aCover</p><p>1015Gas supply port</p><p>1016Fan filter unit</p><p>1016afan</p><p>1016bDust filter</p><p>1018Gas outlet</p><p>1020Gas purification device</p><p>1021Dust filter</p><p>1022Dryer</p><p>1023Chemical filter</p><p>1024Blower</p><p>1030Gas supply line</p><p>1031First Supply Route</p><p>1032Second Supply Route</p><p>1040Gas Return Road</p><p>1041First Return Road</p><p>1042Second Return Road</p><p>1050Controller</p><p>1060Gas introduction means</p><p>1061, 1071valve</p><p>1070Gas attraction means</p><p>1130Gas supply line</p><p>1133valve</p><p>1140Gas Return Road</p><p>1143valve</p><p>1150Controller</p><p>1220Gas purification device</p><p>1230Gas supply line</p><p>1240Gas Return Road</p><p>1250Controller</p><p>1260Gas introduction means</p><p>1261Valve</p><p>1270Gas Attraction Means</p><p>1271Valve</p><p>2002Wafer handling device</p><p>2003Mobile Room</p><p>2005Wafer transfer room</p><p>2008Processing device</p><p>2009Controller</p><p>2011Ontology</p><p>2021Fixed table</p><p>2022Moveable table</p><p>2023Pedestal</p><p>2024Transport Arm</p><p>2024a~2024cArms</p><p>2025Fork</p><p>2026Guide</p><p>2027Roller</p><p>2031~2034Wall</p><p>2031a, 2033a, 2231a, 2233aOpening</p><p>2033Wall</p><p>2034Wall</p><p>2035Top Wall</p><p>2041Gas supply means</p><p>2041aGas supply port</p><p>2041bFlexible Tube</p><p>2042Exhaust baffle</p><p>2043Exhaust duct</p><p>2043aOpen/close valve</p><p>2051Frame</p><p>2051a~2051dFrame Wall</p><p>2051eTop Wall</p><p>2061Load port</p><p>2061adoor</p><p>2062aCover</p><p>2062bPlace</p><p>2081Load Lock Chamber</p><p>2081adoor</p><p>2082Transportation Room</p><p>2082a, 2083adoor</p><p>2082bTransporting robotic arm</p><p>2083Processing unit</p><p>2091Mobile Room Position Control Department</p><p>2092Arm Position Control Section</p><p>2093Lifting position control part</p><p>2094Gas Supply Control Department</p><p>2095Gas discharge control unit</p><p>2096Time Control Department</p><p>2102Wafer handling device</p><p>2103Mobile Room</p><p>2109Controller</p><p>2111Ontology</p><p>2136A, 2136B, 2137, 2236Opening and closing doors</p><p>2196Time Control Department</p><p>2197Opening and closing door control department</p><p>2202Wafer handling device</p><p>2203Mobile Room</p><p>2211Ontology</p><p>2231Wall</p><p>2231aOpening</p><p>2236Opening and closing doors</p><p>2261Load port</p><p>2261adoor</p><p>2261aCover</p><p>2261bSupport base</p><p>2261cRoller</p><p>2261dtrack</p><p>2302Wafer handling device</p><p>2303Mobile Room</p><p>2311Main body</p><p>2344Filter member</p><p>2402Wafer handling device</p><p>2403Mobile Room</p><p>2409Controller</p><p>2411Ontology</p><p>2445Gas circulation means</p><p>2445aCirculation catheter</p><p>2445bfan</p><p>2496Time Control Department</p><p>2498Gas Circulation Control Department</p><p>2502Wafer handling device</p><p>2503Mobile Room</p><p>2511Ontology</p><p>2521Bottom wall</p><p>2526Pillar</p><p>2531, 2533wall</p><p>2535Top Wall</p><p>2536Bottom Wall</p><p>2602Wafer handling device</p><p>2603Mobile Room</p><p>2609Controller</p><p>2611Ontology</p><p>2646Heating Bulb</p><p>2646aSupport arm</p><p>2696Time Control Department</p><p>2699Heating Bulb Control Unit</p><p>2702Substrate transfer device</p><p>2703Mobile Room</p><p>3002Wafer handling device</p><p>3003Heating means</p><p>3005Wafer Handling Room</p><p>3008Processing device</p><p>3009Controller</p><p>3011Main body</p><p>3021Guide</p><p>3022Moveable table</p><p>3023Pedestal</p><p>3024Transfer arm</p><p>3024a~3024darm elements</p><p>3025Fork</p><p>3031Support</p><p>3032Support arm</p><p>3033Heater</p><p>3033AHeater</p><p>3033aHeater body</p><p>3033bheating bulb</p><p>3033B, 3033Cheater</p><p>3033cHeating Bulb</p><p>3033dElectric heating wire</p><p>3051Frame</p><p>3051a~3051dFrame wall</p><p>3061Load port</p><p>3061adoor</p><p>3062aCover</p><p>3062b, 3062b mounting part</p><p>3081Load Lock Chamber</p><p>3081adoor</p><p>3082Transportation Room</p><p>3082a, 3083adoor</p><p>3082bTransporting Robot</p><p>3083Processing Unit</p><p>3091Moveable table position control part</p><p>3092Arm Position Control</p><p>3093Elevating position control part</p><p>3094Heating Control Section</p><p>3202Wafer handling device</p><p>3203Heating means</p><p>3211Main body</p><p>3222Moveable table</p><p>3231Support</p><p>3232Support arm</p><p>3233bHeating Bulb</p><p>3302Wafer handling device</p><p>3303Heating means</p><p>3309Controller</p><p>3311Main body</p><p>3324Transfer Arm</p><p>3324aarm element</p><p>3333Heater</p><p>3333aMain body</p><p>3333bHeating Bulb</p><p>3394Heating Control Section</p><p>3395Heat switch</p><p>3402Wafer Handling Device</p><p>3403Heating means</p><p>3409Controller</p><p>3411Main body</p><p>3432Pillar</p><p>3434Rotating mechanism</p><p>3435Support arm</p><p>3502Wafer Handling Device</p><p>3503Heating means</p><p>3509Controller</p><p>3511Main body</p><p>3531Support</p><p>3532Support arm</p><p>3536Support arm</p><p>3537Air supply fan</p><p>3597Air Supply Control</p><p>3598Time Control Department</p><p>WWafer</p>

[FIG. 1] A plan view showing the relationship between the EFEM and the processing apparatus according to the first embodiment of the present invention.

[Fig. 2] A side view showing a state in which the side wall of the same EFEM is removed.

[Fig. 3] A perspective view showing a part of the same EFEM broken.

[FIG. 4] A schematic diagram showing the flow of gas in the circulation path of the same EFEM.

[Fig. 5] A rear view showing the state as seen from the processing device side with the EFEM.

[ Fig. 6 ] An enlarged perspective view showing the main parts of the constituent members of the gas return path of the same EFEM.

[ Fig. 7 ] A perspective view showing a cross section of the gas return passage at the AA position and the BB position in Fig. 6 .

[Fig. 8] A schematic diagram of an EFEM system of an embodiment of the present invention.

[FIG. 9] A plan view showing the relationship between the EFEM and the processing apparatus that constitute the EFEM system.

[Fig. 10] A side view showing a state in which the side wall of the same EFEM is removed.

[FIG. 11] A schematic diagram of a modification of the EFEM system of the present invention.

[ Fig. 12 ] A schematic diagram of another modification of the EFEM system of the present invention.

[ Fig. 13 ] A schematic diagram showing the relationship between the EFEM and the processing apparatus including the substrate conveying apparatus according to the third embodiment of the present invention.

[ Fig. 14 ] A plan view showing a state in which the moving chamber of the same substrate transfer device is moved from the state shown in Fig. 13 .

[FIG. 15] An enlarged plan view showing the main parts of the same substrate conveying apparatus.

[ Fig. 16 ] A front view showing a state in which the board conveying device is seen from the extending direction of the guide rail.

[ Fig. 17 ] A plan view showing a state where the fork has entered the FOUP from the state shown in Fig. 14 .

[ Fig. 18 ] A plan view showing a state in which the fork is pulled back into the moving chamber from the state shown in Fig. 17 .

[ Fig. 19 ] A plan view showing a state in which the fork has entered the load lock chamber from the state shown in Fig. 18 .

[ Fig. 20 ] A schematic diagram of an EFEM provided with a substrate conveying apparatus according to a fourth embodiment of the present invention.

[Fig. 21] Fig. 21 is an explanatory diagram for explaining the structure and operation of an EFEM provided with a substrate conveying apparatus according to a fifth embodiment of the present invention. [Fig.

[FIG. 22] Next to FIG. 21, an explanatory diagram for explaining the structure and operation of the EFEM provided with the same substrate transfer device.

[ Fig. 23 ] A schematic diagram of an EFEM provided with a substrate conveying apparatus according to a sixth embodiment of the present invention.

[ Fig. 24 ] A schematic diagram of an EFEM provided with a substrate conveying apparatus according to a seventh embodiment of the present invention.

[FIG. 25] A side sectional view showing a state of the board conveying apparatus as seen from a direction perpendicular to the guide rail.

[ Fig. 26 ] A schematic diagram of an EFEM provided with a substrate conveying apparatus according to an eighth embodiment of the present invention.

[ Fig. 27 ] A schematic diagram of an EFEM provided with a substrate conveying apparatus according to a ninth embodiment of the present invention.

[ Fig. 28 ] A diagram showing a modification of the substrate conveying apparatus according to the eighth embodiment of the present invention.

[ Fig. 29] Fig. 29 is an explanatory diagram showing the relationship between the EFEM and the processing apparatus provided with the substrate conveying apparatus according to the tenth embodiment of the present invention.

[FIG. 30] An explanatory diagram showing a state in which the main part of the board conveying apparatus is seen from a plane.

[FIG. 31] An explanatory diagram showing a state in which the main part of the same substrate conveying device is seen from the front or the side.

[ Fig. 32 ] An explanatory diagram showing a state in which the movable table of the same substrate transfer device is moved from the state shown in Fig. 29 .

[FIG. 33] An explanatory diagram showing a state in which the fork is entered into the FOUP from the state in FIG. 32. [FIG. 33] FIG.

[ Fig. 34 ] A plan view showing a state in which the fork is pulled back toward the movable table from the state shown in Fig. 33 .

[Fig. 35] An explanatory diagram showing a state in which the fork is moved toward the front of the load lock chamber from the state in Fig. 34. [Fig.

[Fig. 36] An explanatory diagram showing a state in which the fork is entered into the load lock chamber from the state in Fig. 35. [Fig.

[FIG. 37] It is a schematic diagram of the structure of the heater with which the same board|substrate conveyance apparatus is equipped.

[ Fig. 38] Fig. 38 is an explanatory diagram showing the relationship between the EFEM and the processing apparatus provided with the substrate conveying apparatus according to the eleventh embodiment of the present invention.

[FIG. 39] An explanatory diagram showing a state in which the main part of the board conveying apparatus is seen from a plane.

[FIG. 40] An explanatory diagram showing a state in which the main part of the same substrate conveying apparatus is seen from the front or the side.

[ Fig. 41 ] An explanatory diagram showing a state in which the main part of the board conveying apparatus according to the twelfth embodiment of the present invention is seen from a plane or a front.

[FIG. 42] An explanatory diagram showing a state in which the fork is entered into the FOUP from the state in FIG. 41. [FIG. 42] FIG.

[ Fig. 43 ] An explanatory diagram showing a state in which the main part of the board conveying apparatus according to the thirteenth embodiment of the present invention is seen from the front or the side.

[ Fig. 44 ] An explanatory diagram showing a state in which the main part of the substrate conveying apparatus according to the fourteenth embodiment of the present invention is seen from a plane.

[ Fig. 45 ] An explanatory diagram showing a state in which the main part of the same substrate conveying device is seen from the front or the side.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

&lt;First embodiment&gt;

1 is a plan view illustrating the relationship between the EFEM 1 and the processing device 6 by removing the top plate and the like of the EFEM 1 according to the first embodiment of the present invention and the processing device 6 connected thereto so that the inside can be seen. In addition, FIG. 2 is a side view in which the inside can be seen by removing the wall on the side surface of the EFEM1. As shown in these FIGS. 1 and 2, the EFEM 1 is composed of a wafer transfer device 2 that transfers wafers W between predetermined transfer positions, and a box-shaped device that surrounds the wafer transfer device 2. The housing 3 is composed of a plurality of (three in the figure) loading ports 4 to 4 connected to the outside of the wall (front wall 31 ) on the front side of the housing 3 , and the controller 5 .

Here, in this case, the direction on the side connected to the loading ports 4 to 4 as seen from the housing 3 is defined as the front, the direction on the side of the rear wall 32 facing the front wall 31 is defined as the rear, and further, the front and rear are defined as The direction in which the direction and the vertical direction intersect perpendicularly is defined as the side. That is, the three load ports 4 to 4 are arranged side by side.

And EFEM1, as shown in FIG. 1, is adjacent to the outer side of the back wall 32, so that the load lock chamber 61 constituting a part of the processing apparatus 6 can be connected, through a door provided between the EFEM1 and the load lock chamber 61. 1a is opened, and the inside of the EFEM 1 and the load lock chamber 61 can be communicated with each other. Various types of processing apparatuses 6 can be used. Generally, a transfer chamber 62 is provided adjacent to the load lock chamber 61, and a plurality of wafers W are provided adjacent to the transfer chamber 62 (in the figure: 3) processing units 63~63. Between the transfer chamber 62 and the load lock chamber 61 or the processing units 63 to 63, doors 62a and 63a to 63a are provided, respectively. By opening these doors, they can communicate with each other and can be used in the transfer chamber. The transfer robot 64 in the 62 moves the wafer W between the load lock chamber 61 and the processing units 63 to 63 .

As shown in FIGS. 1 and 2, the wafer transfer apparatus 2 includes an arm portion 2a provided with a fork for placing and transferring the wafer W, and the arm portion 2a is supported from below and has a function of operating the arm portion. The base portion 2b of the driving mechanism and the lifting mechanism is constituted. The base portion 2b is supported by the front wall 31 of the frame body 3 through the support portion 21 and the guide rail 22 . In addition, the wafer transfer device 2 is capable of moving along the guide rails 22 extending in the width direction inside the frame body 3, and the controller 5 controls the operation of the wafer transfer device 2, so that it can be carried out: to be accommodated The wafers W in the FOUPs 7 placed in the side-by-side load ports 4 to 4 are transferred to the load lock chamber 61 , and the wafers W processed by the respective processing units 63 to 63 are transferred into the FOUP 7 again.

The frame body 3 includes: a front wall 31, a rear wall 32, side walls 33 and 34, a top wall 35, a bottom wall 36 surrounding the four sides of the wafer transfer apparatus 2, and the above-mentioned frame walls 31 to 35. The supporting pillars 37 a to 37 d are constituted by connecting the loading ports 4 to 4 to the opening 31 a provided in the front wall 31 , and connecting the load lock chamber 61 to the rectangular opening 32 a provided in the rear wall 32 to form a substantially Enclosed Space CS. In addition, although the above-mentioned members are precisely mounted so as not to create a gap between the members that allows the internal gas to flow out, a sealing member is provided between the members to further improve the airtightness in the housing 3 . Composition is also possible. Moreover, the opening 32a provided in the back wall 32 has a drive mechanism 1b, and can be closed by the door 1a (refer FIG. 3) generally called a gate valve which drives up and down. In addition, although illustration and description are omitted, the side walls 33 and 34 are also provided with openings, one of which serves as a positioner used for connection to position adjustment of the wafer W, and the other serves as an opening for maintenance that is normally closed. .

The loading port 4 includes a door 4a, and the door 4a moves together with the cover portion 7a provided in the FOUP 7 so that the FOUP 7 is opened to the substantially closed space CS. In the FOUP 7, a plurality of placement portions are provided in the up-down direction, whereby a large number of wafers W can be accommodated. In addition, the FOUP 7 is usually filled with nitrogen, and the atmosphere in the FOUP 7 can be replaced with nitrogen through the load port 4 under the control of the controller 5 .

The controller 5 is constituted by a controller unit provided in the upper space US between the ceiling 38 and the ceiling 38 above the top wall 35 of the frame body 3, and the drive control of the wafer transfer device 2 is performed by the loading port. The nitrogen replacement control of the FOUP 7 generated in 4 to 4, the opening and closing control of the doors 1a and 4a to 4a, and the nitrogen circulation control in the casing 3, etc. The controller 5 is composed of a normal microprocessor having a CPU, a memory, and an interface, and stores programs necessary for processing in the memory in advance. A person who cooperates with hard resources to realize the desired function. In addition, the nitrogen cycle control is as described later.

The substantially closed space CS is partitioned by the partition member 8 as shown in FIG. 4 into the wafer transfer chamber 9 , which is a space where the wafer transfer device 2 is driven, and the gas return path 10 . In addition, the wafer transfer chamber 9 and the gas return path 10 are only the gas outlet 11 extending in the width direction at the upper part of the wafer transfer chamber 9 and the gas suction port extending in the width direction at the lower part of the wafer transfer chamber 9 . 12 is connected, and the gas outlet 11 and the gas suction port 12 generate a downward airflow in the wafer transfer chamber 9 and an upward airflow in the gas return path 10, so that the substantially closed space CS is formed in FIG. 4 by arrows. The circulation path Ci is shown, which circulates the gas. At this time, the wafer transfer chamber 9 is formed by the front wall 31 , the rear wall 32 (including the door 1 a , see FIG. 3 ), the loading port 4 (including the door 4 a ), the side walls 33 and 34 , and the bottom wall 36 and the space in which the partition member 8 is closed. In addition, in the present embodiment, although the inert gas, that is, nitrogen, is circulated in the substantially closed space CS, the circulating gas is not limited to this, and other gases may be used.

Next, the configuration of the gas return path 10 will be described in detail. As shown in FIG. 4 , the gas return path 10 is a space closed by the bottom wall 36 , the back wall 32 , the top wall 35 and the partition member 8 , and is discharged from the gas suction port 12 in the lower part of the wafer transfer chamber 9 . The sucked gas is returned to the gas outlet 11 in the upper part of the wafer transfer chamber 9 and installed.

A gas supply means 16 for introducing nitrogen into the substantially closed space CS is connected to the upper back side of the return passage 10, so that supply and stop of nitrogen supply can be controlled in accordance with commands from the controller 5 (see FIG. 2). Therefore, when a part of nitrogen flows out to the outside of the substantially closed space CS, the gas supply means 16 can keep the nitrogen atmosphere in the substantially closed space CS constant by supplying the nitrogen that flows out. In addition, a gas discharge means 17 for discharging the gas in the substantially closed space CS is connected to the lower part of the back side, and operates according to a command from the controller 5, and the substantially closed space CS can be opened by opening a shutter (not shown). It communicates with the inside of the air outlet and the gas outlet located outside. And by using it together with the supply of nitrogen by the gas supply means 16 mentioned above, it becomes possible to replace the substantially closed space CS with a nitrogen atmosphere. In the present embodiment, since the gas circulating in the circulation path Ci is nitrogen, the gas supply means 16 supplies nitrogen, but when circulating other gases, the gas supply means 16 supplies the gas to be circulated.

In addition, a fan filter unit 13 (FFU 13) composed of a fan 13a and a filter 13b as a first air blowing means is provided in the gas outlet 11, and removes particulates contained in the gas circulating in the substantially closed space CS, Then, downward airflow is generated in the wafer transfer chamber 9 by blowing the air downward into the wafer transfer chamber 9 . In addition, the FFU 13 is supported by the support member 18 which is connected to the partition member 8 and extends in the horizontal direction.

On the other hand, a chemical filter 14 is connected to the gas suction port 12 , and the gas in the wafer transfer chamber 9 flows into the gas return path 10 through the chemical filter 14 . As described above, since the wafer transfer device 2 (refer to FIG. 2 ) is supported on the front wall 31 of the housing 3 through the support portion 21 and the guide rail 22 , the gas suction port 12 does not interfere with the wafer transfer device 2 and becomes It can be greatly opened upwards. In addition, since the gas suction port 12 is provided so as to extend in the width direction as described above, even if particles are generated when the wafer transfer apparatus 2 is driven from the guide rails 22 extended in the width direction, the particles can be effectively sucked in. . Furthermore, by providing the chemical filter 14 in the gas suction port 12, the molecular contaminants flowing into the wafer transfer chamber 9 generated by processing in the processing apparatus 6 (see FIG. 1) can be removed. Further, on the back side of the chemical filter 14 in the gas return path 10, a fan 15 as a second air blowing means is installed across the width direction (see FIG. 5), and the fan 15 returns to the gas by facing The downstream side of the channel 10, that is, the upper part of FIG. 4, is blown to generate suction of the gas in the gas suction port 12, and the gas that has passed through the chemical filter 14 is sent upward, so that the gas is generated in the gas return channel 10. Updraft.

And by the fan 13a and the fan 15 of the FFU 13 described above, the gas in the substantially closed space CS is circulated by descending in the wafer transfer chamber 9 and ascending in the gas return path 10 . Since the gas discharge port 11 is opened downward, the gas is sent downward by the FFU 13, and since the gas suction port 12 is opened upward, the downward airflow generated by the FFU 13 can be directed downward without being disturbed. By attracting the gas, the flow of the gas can be smoothly made by these. In addition, by generating downdraft in the wafer transfer chamber 9 , the particles adhering to the upper portion of the wafer W can be removed, and the particles can be prevented from floating in the wafer transfer chamber 9 .

Here, the flow path of the gas in the gas return path 10 will be described in detail with reference to FIGS. 6 and 7 . FIG. 6 is an enlarged perspective view of the gas return passage 10 , and FIG. 7 is a perspective view showing a cross section at the AA position and the BB position shown in FIG. 6 .

As shown in FIG. 6 , the partition member 8 is composed of three members, an upper partition member 81 , a lower partition member 82 , and an intermediate member 83 . Specifically, the upper partition member 81 is a flat plate-shaped member having a rectangular opening 81 a larger than the opening 32 a of the rear wall 32 in the inner side of the upper partition member 81 along the rear wall 32 , and its side ends are The struts 37c and 37d are in contact with each other, and the upper ends are connected to the above-mentioned support member 18 (see FIG. 4).

The lower partition member 82 is a stage-shaped member having three stages toward the rear, a lower stage 82a, a middle stage 82b, and an upper stage 82c, and is formed across the width direction on the bottom wall 36 so as to contact the struts 37c and 37d from the front, and A closed space is formed inside by providing side plate 82d at both ends in the width direction. The chemical filter 14 is connected to the upper part of the lower stage 82a to form the gas suction port 12, and the upper stage 82c is in contact with the lower end of the upper partition member 81 (see FIG. 4).

The intermediate member 83 has a shape having the same thickness as the pillars 37c and 37d in the front-rear direction, and is arranged below the opening 32a of the rear wall 32 by connecting the shunts 83a, The H-shaped H-shaped portion 83b is formed by arranging the opening 32a of the rear wall 32 to avoid the opening 32a of the rear wall 32 on the left, right and the upper side of the opening 32a, thereby forming an opening 83c of almost the same size as the opening 81a of the upper partition member 81 . The inside of the shunt portion 83a is hollow, and the drive mechanism 1b for opening and closing the opening 32a by moving the door 1a (see FIG. 3 ) up and down through the opening 83a1 provided on the upper surface is provided in the inside. In addition, the upper surface of the diverting portion 83a and the upper stage 82c of the lower partition member 82 have the same height, and the upper end of the H-shaped portion 83b is in contact with the ceiling wall 35 .

By configuring the partition member 8 in this way, the gas directed upward by the fan 15 (refer to FIG. 4 ) provided inside the lower partition member 82 is on the lower side than the upper stage 82 c of the lower partition member 82 , such as As shown in the cross section S1 of FIG. 7 , the flow flows through the flow path surrounded by the lower partition member 82 , the rear wall 32 , the branch portion 83 a of the intermediate member 83 , and the struts 37 c and 37 d . And, in the upper side than the upper stage 82c (refer to FIG. 6) of the lower partition member 82, as shown in the cross-section S2 of FIG. 7, the flow diverges through the upper partition member 81, the back wall 32, and the intermediate member. The flow path surrounded by the H-shaped portion 83b of the 83 and the strut 37c (the flow path on the left side of FIG. 7 ); and the upper partition member 81, the rear wall 32, the H-shaped portion 83b of the intermediate member 83, and the strut 37c surrounded by the strut 37c flow path (the flow path on the right in Figure 7). That is, as shown in FIG. 5 , in the section H1 , the gas can flow across the width direction, while in the section H2 , the gas can flow only on both sides of the intermediate member 83 .

With such a configuration, a large flow path area can be secured for the gas return path 10 and a dead space (dead space) outside the driving area of the wafer transfer device 2 inside the casing 3 is obtained, so that it is not necessary to change the appearance. It becomes possible to prevent interference of each member constituting the gas return path 10 with devices outside the EFEM 1 such as the load port 4 and the load lock chamber 61 . Specifically, as shown in FIG. 2 , it is located below the upper stage 82 a of the lower partition member 82 , that is, the section H1 in FIGS. 4 and 5 is located lower than the movement of the arm portion 2 a of the wafer transfer device 2 . The area is further down, so that the wafer transfer device 2 is supported by the front wall 31 of the frame body 3 through the support portion 21 and the guide rail 22, so that the lower partition member 82 is allowed to follow the shape of the base portion 2b. The gas suction port 12 can be opened upward in an enlarged manner, and the flow path area of the gas return path 10 can be secured. On the other hand, Figure 4 and Section H2 in FIG. 5 is a height range including the movement of the arm portion 2a of the wafer transfer device 2, and avoids the space around the opening 32a required for the arm portion 2a to transfer the wafer W, specifically, by using the opening 32a By setting the flow path of the gas return path 10 in the space on the left and right of the space, the movement space of the arm portion 2a can be secured without interfering with the conveyance path of the wafer W. Furthermore, the flow paths provided on the left and right sides of the opening 32a also avoid the door 1a (see FIG. 3 ) for closing the opening 32a and the drive mechanism 1b for opening and closing the door 1a, and the levers provided on the levers 37c and 37d are used for the support. The pillars 37c and 37d are configured so as to be within the range of the thickness in the front-rear direction (see Fig. 7). In addition, since the gas return path 10 is formed using a part of the frame body 3, that is, the rear wall 32 and the supports 37c and 37d, the structure constituting the gas return path 10 has strength, and the number of parts is not increased, so that the production can be suppressed. Rising costs.

Next, in the EFEM1 configured as described above, the operation of nitrogen cycle control for circulating nitrogen will be described with reference to FIG. 4 .

First, in the initial stage, the controller 5 purifies the substantially closed space CS of the EFEM 1 in the atmospheric atmosphere into a nitrogen atmosphere by discharging the gas in the gas discharge means 17 and supplying nitrogen into the substantially closed space CS by the gas supply means 16 . . After this stage, when nitrogen in the circulation path Ci leaks to the outside, the controller 5 supplies nitrogen to the gas supply means 16 in accordance with the leaked amount.

And in the substantially closed space CS which becomes such a nitrogen atmosphere, by driving the fan 13a and the fan 15 of the FFU 13, the controller 5 generates the circulation of the gas in the circulation path Ci. At this time, since the filter 13b and the chemical filter 14 of the FFU 13 can remove particles and molecular contaminants in the circulating gas, the inside of the wafer transfer chamber 9 is always in a state where a clean nitrogen downflow is generated.

In the EFEM 1 in this state, the wafer transfer chamber 9 and the FOUP 7 are the same when the FOUP 7 placed in the load port 4 and the wafer transfer chamber 9 are connected to each other and the wafer W is loaded and unloaded. It is a nitrogen atmosphere, the nitrogen in the wafer transfer chamber 9 is also kept clean, and the particles and molecular contaminants in the FOUP7 cannot enter, and it is not necessary to make the inside of the FOUP7 a positive pressure for the wafer transfer chamber 9, which can be suppressed in the FOUP7. Purified nitrogen consumption.

And by opening the door 1a provided between the wafer transfer chamber 9 and the load lock chamber 61 (refer to FIG. 1 ), the wafer transfer chamber 9 and the load lock chamber 61 are communicated with the load lock chamber 61 . When the wafers W are in and out, are they adhered to the wafers W by processing in the processing apparatus 6 , or the particles and molecular contaminants existing in the load lock chamber 61 are directed toward the wafer transfer chamber 9 . If there is a possibility of inflow, these particulate and molecular contaminants flow downward by the downdraft in the wafer transfer chamber 9, and pass through the gas return path 10 through the chemical filter 14 and the filter 13b of the FFU 13. After being cleaned, the particles and molecular contaminants in the wafer transfer chamber 9 do not flow again, which can effectively reduce the negative influence on the wafer W being transferred.

As described above, the EFEM 1 in the present embodiment is provided with the loading ports 4 to 4 connected to the opening 31a provided in the wall surface, that is, the front wall 31, and is configured internally by the opening provided in the wall surface, that is, the rear wall 32 32a is connected to the frame body 3 of the wafer transfer chamber 9, which is substantially closed by the processing device 6; a wafer transfer device 2 for transferring wafers W between 6; A gas suction port 12 for sucking gas in the wafer transfer chamber 9; a gas return path 10 for returning the gas sucked from the gas suction port 12 to the gas discharge port 11; and a gas discharge port 11 provided with The FFU 13 of the filter 13b that removes the particles contained in the sent gas; by generating a downflow in the wafer transfer chamber 9 and returning the gas through the gas return path 10, the gas in the wafer transfer chamber 9 is returned. Circulatory way.

With this configuration, the wafer transfer chamber 9 can be maintained in the wafer transfer chamber 9 by generating a downdraft in the wafer transfer chamber 9 and circulating the gas through the gas return path 10 , and the wafer transfer chamber 9 becomes a substantially closed space. under nitrogen atmosphere. Therefore, the transfer of the wafer W can be performed without exposing the wafer W to the outside air, and the adhesion of particles can be suppressed. And by providing the FFU 13 provided with the filter 13b in the gas delivery port 11, it becomes possible to remove fine particles while circulating nitrogen. Furthermore, by generating downdraft in the wafer transfer chamber 9 , particles adhering to the upper portion of the wafer W are removed, and the particles can be prevented from floating in the wafer transfer chamber 9 . Furthermore, by circulating nitrogen, nitrogen consumption can be suppressed, and cost can be reduced.

Furthermore, since the space between the rear wall 32 of the casing 3 and the partition member 8 provided on the inner side of the rear wall 32 is used as a part of the gas return path 10, In addition, the wafer transfer chamber 9 and the gas return path 10 are formed by being separated by the partition member 8, so a large flow path area can be ensured without changing the appearance, and the load lock chamber 61 and the like can be prevented from interfering with devices outside the EFEM1. In addition, it is possible to suppress an increase in the number of parts and an increase in the manufacturing cost.

Furthermore, since the openings 31 a connecting the loading ports 4 to 4 and the opening 32 a connecting the processing device 6 are provided at the opposite positions of the casing 3 , the gas return path 10 is connected to the processing device 6 from the gas suction port 12 through the gas return path 10 . Since both sides of the connected opening 32a are configured to be continuous with the gas outlet 11, the dead space (dead space) outside the driving area of the wafer transfer apparatus 2 can be effectively used, and the transfer of the wafer W can be prevented and gas can be secured. traffic.

In addition, the FFU 13 including the fan 15 , which is the first blowing means, is connected to the gas outlet 11 , and the fan 15 , which is the second blowing means, is connected to the gas suction port 12 , so that the wafer is transported from the gas outlet 11 to the wafer by the FFU 13 . Since the gas in the chamber 9 is sent out and the gas in the wafer transfer chamber 9 is sucked by the fan 15 from the gas suction port 12 , the circulation of the gas flowing in the wafer transfer chamber 9 and the gas return path can be smoothly performed.

In addition, since the configuration further includes gas supply means 16 for supplying nitrogen into the wafer transfer chamber 9 and gas discharge means 17 for discharging gas from the wafer transfer chamber 9, the inside of the wafer transfer chamber 9 can be replaced. When a suitable gas atmosphere is formed to prevent oxygen gas and moisture from adhering to the surface of the wafer W, which hinders the processing of the wafer W and reduces the yield, and a part of the nitrogen in the wafer transfer chamber 9 flows out to the outside, the By supplying the outflow nitrogen, the state in the wafer transfer chamber 9 can be kept constant.

In addition, since the chemical filter 14 is provided in the gas suction port 12, the gas in the wafer transfer chamber 9 flows through the chemical filter 14 and flows into the gas return path 10, so that the gas in the processing apparatus 6 can be removed. The generated molecular contaminants flow into the wafer transfer chamber 9 .

In addition, since the wafer transfer device 2 is supported by the front wall 31 of the housing 3, the gas suction ports 12 provided with the wafer transfer device 2 and the chemical filter 14 are arranged so as not to interfere with each other, and do not interfere with each other. The descending airflow in the wafer transfer chamber 9 is hindered, and it is possible to prevent particles from floating due to the turbulent flow of the airflow.

In addition, since the gas circulating in the wafer transfer chamber 9 is nitrogen, which is an inert gas, changes in the properties of the surface of the wafer W caused by oxygen and moisture can be suppressed, thereby preventing a decrease in yield.

In addition, the specific structure of each part is not limited only to the above-mentioned Example.

For example, in the above-described embodiment, the transfer of the wafer W is performed between the FOUPs 7 to 7 provided on the load ports 4 to 4 and the load lock chamber 61, but the transfer between the FOUPs 7 to 7 is also performed. can use.

In addition, although the conveying object of the wafer conveying apparatus 2 is premised on the use of the wafer W, the present invention can also be applied to the EFEM 1 for which various precision-processed products such as glass substrates are used.

In addition, in the above-mentioned embodiment, although the guide rails 22 constituting the predetermined tracks are supported by the front wall 31 of the frame body 3 , they may be supported by any of the frame bodies 3 as long as they do not interfere with the gas suction port 12 . For example, the guide rail 22 may be provided on the bottom wall 36 , and the wafer transfer apparatus 2 may be supported by the bottom wall 36 . In addition, if the movement direction of the wafer transfer apparatus 2 can be restricted, it is not limited to the guide rails 22, and the rails may be formed by other means such as guide rollers and pull wires.

Further, the wafer transfer apparatus 2 is not limited to the link-type arm robot and the SCARA-type multi-joint robot arm, and various types may be used.

In the above-mentioned embodiment, the gas supply means 16 is provided on the upper back side of the gas return passage 10, and the gas discharge means 17 is provided on the back side lower portion of the gas return passage 10, but these gas supply means 16 and gas discharge means The installation position of 17 is not limited, and may be installed at any place in the circulation path Ci.

Further, in the above-described embodiment, the discharge of the gas by the gas discharge means 17 and the supply of nitrogen by the gas supply means 16 are performed simultaneously, but the gas discharge means 17 provided with the suction mechanism is firstly provided by the gas The substantially closed space CS may be discharged into a negative pressure, and then the substantially closed space CS in the atmospheric atmosphere may be made into a nitrogen atmosphere by supplying nitrogen into the substantially closed space CS by the gas supply means 16 . By doing so, nitrogen purification can be performed more efficiently.

Furthermore, in the above-described embodiment, although the EFEM 1 is connected to one load lock chamber 61 , a configuration in which two or more load lock chambers 61 are connected is also considered. In this case, since two or more openings 32a are provided in the rear wall 32 corresponding to the number of the load lock chambers 61 connected, the gas return path 10 may be formed by dividing three or more so as to avoid those openings 32a.

Furthermore, in the above-described embodiment, the gas return path 10 is provided inside the casing 3 of the EFEM 1 , but the gas return passage 10 may be configured by providing a conduit outside the casing 3 . In this case, in order to prevent the conduit from interfering with the load lock chamber 61 and to ensure a wide flow path, the conduit is preferably provided to diverge to the left and right of the opening 32 a connected to the load lock chamber 61 . In addition, the shape of the gas return path 10 may be variously formed in accordance with the shape of the surrounding apparatus.

In the above-described embodiment, nitrogen is used as the gas for replacing the atmosphere around the wafer W, but various gases such as dry air and argon can be used for the processing.

Further, in the EFEM 1 of the above-described embodiment, a dryer for reducing the humidity in the substantially closed space CS, a cooler for reducing the temperature, an ionizer for removing static electricity of the wafer W, and the like are provided, and the wafers are transported. The environment in the room 9 may be further improved.

Other configurations can be variously modified without departing from the scope of the present invention.

&lt;Second embodiment&gt;

Since a plurality of EFEMs are usually installed in a clean room, when nitrogen is supplied to each EFEM, the amount of nitrogen used will further increase. In addition, when equipment for supplying nitrogen is installed in each EFEM, the installation area of the entire equipment increases, and the cost required for installation and management of the equipment increases.

Here, in the second embodiment, it is an object to provide an EFEM system that, when a plurality of EFEMs are used, is not exposed to an atmosphere that causes changes in the surface properties and adhesion of particles to the wafer being transported, and can With a simple structure, it is possible to suppress the adhesion of particles to the wafer and appropriately manage the properties of the wafer surface, thereby achieving reduction in installation area and cost reduction.

As shown in FIG. 8 , the EFEM system of the second embodiment is composed of two or more EFEMs 1010 to 1010 installed in a clean room, having the same inner volume, and used to perform the same process on the wafer W, and the equipment One gas cleaning device 1020 outside these EFEMs 1010 to 1010, and wafer transfer chambers 1011 to 1011 ( 1011 to 1011 ( 9 and 10), a gas supply path 1030 for supplying, and a gas return path 1040 for returning the exhaust gas Gd discharged from the wafer transfer chambers 1011 to 1011 to the gas cleaning device 1020, and a controller 1050, and It consists of gas introduction means 1060 for introducing nitrogen gas into the gas supply passage 1030, and gas suction means 1070 for suctioning the gas in the gas return passage 1040. In addition, the gas cleaning device 1020, the gas supply path 1030, the plurality of wafer transfer chambers 1011 to 1011, and the gas return path 1040 are connected to form a nitrogen atmosphere, and the circulation path Ci is formed between them to perform nitrogen circulation. That is, the plurality of EFEMs 1010 to 1010 are configured to share the gas cleaning device 1020 . In addition, the gas cleaning device 1020, the gas supply path 1030, the plurality of wafer transfer chambers 1011 to 1011, and the gas return path 1040 constituting the circulation path Ci are each sealed except for the connection portion, and nitrogen does not flow into the connected state. The outside of the circulation path Ci flows out. In addition, in the present embodiment, the inert gas, that is, nitrogen, is circulated in the circulation path Ci, but the circulating gas is not limited to this, and other gases may be used.

As shown in FIGS. 9 and 10, each EFEM 1010 is provided with a wafer transfer device 1012 that transfers wafers W between predetermined transfer positions, and a box-type device that surrounds the wafer transfer device 1012. The wafer transfer chamber 1011 and a plurality of (three in the figure) load ports 1013 to 1013 connected to one of the facing wall surfaces of the wafer transfer chamber 1011 . The FOUP 1014 is placed on the load port 1013, and the door 1013a provided in the load port 1013 and the lid 1014a of the FOUP 1014 are connected and moved together, so that the FOUP 1014 and the wafer transfer chamber 1011 are communicated. In the FOUP 1014, a plurality of placement portions are provided in the vertical direction, so that a large number of wafers W can be accommodated. In addition, the FOUP 1014 is usually filled with nitrogen, and the atmosphere in the FOUP 1014 may be replaced with nitrogen through the load port 1013 .

As shown in FIG. 9, each EFEM 1010 is adjacent to the outer side of the wall surface facing the connected wall surface of the load port 1013, and can be connected to the processing apparatus 1001 for processing the wafer W by By opening a door 1010a generally called a gate valve provided between the EFEM 1010 and the processing apparatus 1001, the wafer transfer chamber 1011 of the EFEM 1010 and the load lock chamber 1002 of the processing apparatus 1001 can be communicated with each other. Although various kinds of processing apparatuses 1001 can be used, generally, a transfer chamber 1003 is provided adjacent to the load lock chamber 1002, and a plurality of (three in the figure) processing chambers are provided adjacent to the transfer chamber 1003. Configuration of cells 1004 to 1004 . The transfer room 1003 and between the load lock room 1002 and the processing units 1004 to 1004 are provided with doors 1002a, 1003a to 1003a, respectively. By opening these doors, they can communicate with each other. The transfer robot 1005 inside is capable of moving the wafer W between the load lock chamber 1002 and the processing units 1004 to 1004 . In this embodiment, the processing apparatuses 1001 connected to the EFEMs 1010 are those that perform the same type of processing.

The wafer transfer chamber 1011 is a space in which the wafer transfer device 1012 is driven, and is made airtight in order to suppress the outflow of circulating nitrogen. In addition, as shown in FIG. 10, a gas supply port 1015 connected to a gas supply path 1030 (see FIG. 8) in the upper part of the wafer transfer chamber 1011, a fan 1016a and a dust filter by means of blowing air are provided A fan filter unit (FFU) 1016 constituted by 1016b, the dust filter 1016b removes particles in the gas supplied from the gas supply port 1015, and blows the fan 1016a toward the wafer transfer chamber 1011, and the wafer is transferred in the wafer transfer chamber 1011. A downdraft is generated in the chamber 1011 . Further, a gas discharge port 1018 connected to a gas return path 1040 (refer to FIG. 8 ) is provided in the lower part of the wafer transfer chamber 1011 , and the gas passing through the wafer transfer chamber 1011 as a downflow is cleaned to the gas through the gas return path 1040 . Device 1020 is returned and reused. In addition, by generating downdraft in the wafer transfer chamber 1011 as described above, particles adhering to the upper portion of the wafer W are removed, and generation of impurities and impurities from the particles and the processing apparatus 1001 in the wafer transfer chamber 1011 can be prevented. Residual gas floats.

As shown in FIGS. 9 and 10 , the wafer transfer device 1012 is supported at the bottom of the wafer transfer chamber 1011 through guide rails 1012 a, and is a guide rail 1012 a that can extend in the width direction toward the bottom surface of the wafer transfer chamber 1011 . Movement is enabled: After the wafer W accommodated in the FOUP 1014 placed in the three load ports 1013 to 1013 arranged side by side is transported to the load lock chamber 1002 and processed in the processing units 1004 to 1004 The wafer W is transferred to the FOUP 1014 again.

As shown in FIG. 8 , the gas cleaning device 1020 is a gas that flows through the wafer transfer chamber (refer to FIG. 9 ) 1011 of each EFEM 1010 and contains particulate and molecular contaminants, which are to be returned from the gas return path 1040 . The gas Gd is reused and purified, and the purified gas Gc is sent to the gas supply path 1030 to supply and circulate the purified gas Gc to the wafer transfer chambers 1011 to 1011. Specifically, it includes a dust filter. 1021, a dryer 1022, a chemical filter 1023, and a blower 1024, which is an air blowing means, is constituted. In addition, although these elements of the gas cleaning device 1020 are arranged in the order of the blower 1024, the chemical filter 1023, the dryer 1022, and the dust filter 1021 from the downstream side of the circulation path Ci to the upstream side in FIG. 8, they are not necessarily It is necessary to set in this order, and the order of arrangement can be appropriately changed. The gas cleaning device 1020 may be installed in a clean room provided with EFEMs 1010 to 1010, and it may be installed outside the clean room by passing the conduits of the gas supply path 1030 and the gas return path 1040 through the wall of the clean room, and can correspond to cleaning Install at suitable locations such as the arrangement of indoor devices.

The dust filter 1021 removes particulates in the exhaust gas Gd, and corresponds to the conditions of each EFEM 1010 and the processing device 1001 connected to these, the conditions of particulates contained in the exhaust gas Gd, and the gas in the circulation path Ci. Circulating pressure, etc., use HEPA filter, ULPA filter, etc., respectively. In addition to the above-described dust filter 1021, a dust filter 1016b (see FIG. 10) is also provided inside each EFEM 1010, but by cooperating with the dust filter 1021 of the gas cleaning device 1020, it becomes A more purified gas can be supplied into the wafer transfer chamber 1011 . In addition, compared with the case of removing particles only by the dust filter 1016b provided in the EFEM 1010, the number of times of exchange of the dust filter 1016b can be reduced, and the exchange cost of exchanging the dust filter 1016b in each EFEM 1010 can be reduced.

The dryer 1022 is used for removing moisture in the exhaust gas Gd generated in the processing device 1001 connected to the EFEM 1010, and is generally constituted by a dehumidifier or a dehumidifier. By removing the moisture in the exhaust gas Gd, it is possible to prevent the occurrence of deterioration in the quality of the wafer W caused by the moisture in the wafer transfer chamber 1011 . In addition, the dryer 1022 may stop the operation under the control of the controller 1050 when moisture does not occur in the connected processing apparatus 1001 and the humidity in the wafer transfer chamber 1011 does not rise.

The chemical filter 1023 is used by the processing apparatus 1001 (refer to FIG. 9 ) for processing or the like, or is a molecule of residual gas or the like flowing into the wafer transfer chamber 1011 with the gas generated by the processing attached to the wafer W For the removal of contaminants in the form of molecules, corresponding to the type of molecular contaminants, use: cation filters, anion filters, which remove contaminants by ion exchange reaction, and activated carbon filters that physically adsorb contaminants.

In addition, the blower 1024 is a device that blows air from the gas return path 1040 to the gas supply path 1030 in order to promote the circulation of the gas in the circulation path Ci, and has a suction function of the gas in the gas return path 1040 and the sending of the gas to the gas supply path 1030. effect. In addition, the controller 1050 can adjust the air supply volume of the blower 1024, and a pressure sensor or a flowmeter not shown in the figure is set in the circulation circuit Ci, and the controller 1050 adjusts the value of the pressure sensor or flowmeter according to the value of the pressure sensor or the flowmeter. By adjusting the air supply volume of the blower 1024, the flow of the gas in the circulation path Ci can be made uniform.

The gas supply path 1030 is a conduit for sending the clean gas Gc cleaned by the gas cleaning device 1020 to the wafer transfer chambers 1011 to 1011 (refer to FIG. 10 ) of the EFEMs 1010 to 1010 , and is connected to the gas cleaning device 1020 by: A first supply channel 1031 serving as the main channel through which the gas flows toward the plurality of EFEMs 1010 to 1010, and a gas supply port 1015 (the 10th gas supply port 1015) that diverges from the first supply channel 1031 and faces the individual EFEMs 1010 and each wafer transfer chamber 1011. It is composed of a plurality of second supply paths 1032 to 1032 connected to each other.

The gas return path 1040 is a duct for returning the exhaust gas Gd discharged from the wafer transfer chambers 1011 to 1011 (refer to FIG. 10 ) of the EFEMs 1010 to 1010 to the gas cleaning device 1020 . A plurality of second return passages 1042 to 1042 connected to the gas discharge port 1018 (refer to FIG. 10 ), and these second return passages 1042 to 1042 are connected to merge the exhaust gas Gd from the wafer transfer chambers 1011 to 1011 and merge with the gas The purifier 1020 is connected to the first return path 1041 which becomes the main path, and returns the merged exhaust gas Gd to the gas purifier 1020 .

In addition, the gas supply passage 1030 and the gas return passage 1040 are of various shapes, such as corner conduits and round conduits, depending on the environment of the clean room into which the EFEM system is introduced, and the materials thereof include general zinc-coated iron plates, Stainless steel sheets with anti-rust properties and polyvinyl chloride-coated steel sheets with excellent gas resistance, etc., use materials suitable for the components contained in the circulating gas. Furthermore, since the clean gas Gc flowing in the gas supply path 1030 and the exhaust gas Gd flowing in the gas return path 1040 have different degrees of cleanliness, if the materials used in the gas supply path 1030 and the gas return path 1040 are changed, it becomes Material cost can be suppressed.

The controller 1050 is a nitrogen cycle controller that operates the above-mentioned gas cleaning device 1020 and circulates nitrogen in the circulation circuit Ci while cleaning it. The configuration is such that programs necessary for processing are stored in the memory in advance, and the CPU fetches and executes the necessary programs one by one, and realizes the desired functions in cooperation with peripheral hardware resources. In addition, the nitrogen cycle control is as described later.

The gas introduction means 1060 is connected through the first supply path 1031 and the valve 1061, and nitrogen is sent out in the first supply path 1031, and the controller 1050 controls the nitrogen flow to the gas supply path 1030 by controlling the opening and closing of the valve 1061. supply and stop of supply, and the supply amount per unit time can be controlled during supply.

The gas suction means 1070 is connected through the first return passage 1041 and the valve 1071, and operates according to a command from the controller 1050, so that the gas provided in and outside the first return passage 1041 can be discharged by opening and closing the valve 1061. Connected everywhere. In addition, by using in combination with the supply of nitrogen generated by the above-described gas introduction means 1060, the inside of the circulation path Ci can be replaced with a nitrogen atmosphere. Furthermore, in the present embodiment, since the gas circulating in the circulation path Ci is nitrogen, the gas introducing means 1060 supplies nitrogen, but when other gases are circulated, the gas introducing means 1060 supplies the circulated gas, that is, Can.

Next, the operation in the nitrogen cycle control for circulating nitrogen in the EFEM system configured as described above will be described with reference to FIG. 8 .

First, in the initial stage, the controller 1050 opens the valve 1071 and the valve 1061, sucks and discharges the gas in the gas return passage 1040 by the gas suction means 1070, and supplies nitrogen into the gas supply passage 1030 by the gas introduction means 1060, The circulation path Ci in the atmospheric atmosphere including the gas return path 1040 and the gas supply path 1030 is purified into a nitrogen atmosphere. In addition, when the purification is completed, the closed circulation path Ci is formed by closing the valve 1071 and the valve 1061 . After this stage, the controller 1050 opens the valve 1071 when the nitrogen in the circulation path Ci leaks to the outside, and supplies nitrogen to the gas introduction means 1060 according to the leaked amount. To perform this automatically, an oxygen densitometer is installed in each EFEM 1010 to 1010. When the oxygen concentration detected by the oxygen densitometer is higher than a predetermined value or more, it re-enters the circulation path Ci. The configuration in which the valves 1061 and 1071 are controlled so as to supply nitrogen is also optimal.

Next, the controller 1050 drives the blower 1024 of the gas cleaning device 1020 in the circulation path Ci which becomes such a nitrogen atmosphere, thereby generating the circulation of nitrogen. In addition, at this time, the wind of the FFU 1016 constituting each EFEM 1010 The fan 1016a (refer to FIG. 10) is also driven to generate downdraft in each wafer transfer chamber 1011, and to promote the circulation of nitrogen in the circulation path Ci. With this configuration, the exhaust gas Gd in the gas return passage 1040 can be effectively prevented from flowing backward into the EFEM 1010 .

In addition, when nitrogen is circulated in the circulation path Ci, in order to remove it, it is circulated through: the dust filter 1021 and the chemical filter 1023 provided in the gas cleaning device 1020, and the dust filter 1016b (refer to FIG. 10 ) constituting the FFU 1016 provided in each EFEM 1010. Particles and molecular contaminants in the gas are always in a state in which clean nitrogen flows in the circulation path Ci, especially in the wafer transfer chamber 1011 .

In the EFEM 1010 in this state, the FOUP 1014 placed on the load port 1013 shown in FIG. 9 and cleaned to a nitrogen atmosphere communicates with the wafer transfer chamber 1011, and when the wafer W is loaded and unloaded, the wafer is transferred. Both the chamber 1011 and the FOUP 1014 have the same nitrogen atmosphere, and since the nitrogen in the wafer transfer chamber 1011 is also kept clean, it is not necessary to place the FOUP 1014 inside the FOUP 1014 to the wafer transfer chamber in order to prevent particles and molecular contaminants from entering. The inside of 1011 becomes positive pressure, and the consumption amount of nitrogen purified in FOUP 1014 can be suppressed.

Then, by opening the door 1010a provided between the wafer transfer chamber 1011 and the load lock chamber 1002, the wafer transfer chamber 1011 and the load lock chamber 1002 are communicated, and the wafer W is performed between the wafer transfer chamber 1011 and the load lock chamber 1002. When entering and leaving the wafer, whether it is adhered to the wafer W by the processing in the processing apparatus 1001, or the particles and molecular contaminants existing in the load lock chamber 1002 may flow into the wafer transfer chamber 1011. Particles and molecular contaminants flow downward by the downdraft in the wafer transfer chamber 1011 , become exhaust gas Gd and return to the gas cleaning device 1020 through the gas return path 1040 , and are removed by the dust filter 1021 and the chemical filter 1023 . Cleanse. Although the cleaned gas is sent out again into the wafer transfer chamber 1011 through the gas supply path 1030 as the clean gas Gc, in the EFEM 1010, the particles are further removed by the dust filter 1016b of the FFU 1016, and the wafer is removed. In the transfer chamber 1011 , there is almost no flow of particulate and molecular contaminants, so that the negative influence on the wafer W being transferred in the wafer transfer chamber 1011 can be effectively reduced.

As described above, the EFEM system according to the present embodiment includes a plurality of EFEMs 1010 to 1010 each including wafer transfer chambers 1011 for transferring wafers W inside, and a plurality of EFEMs 1010 to 1010 that are provided outside the EFEMs 1010 to 1010 and include a process gas. The gas cleaning device 1020 of the dust filter 1021 for cleaning, the gas supply path 1030 for distributing the gas cleaned by the gas cleaning device 1020, that is, the cleaning gas Gc, and supplying it to each wafer transfer chamber 1011, and the The gas return path 1040 , which is the gas discharged from each wafer transfer chamber 1011 , that is, the exhaust gas Gd is returned to the gas cleaning device 1020 , is formed by circulating the gas between the wafer transfer chamber 1011 and the gas cleaning device 1020 .

Because of this configuration, the dust filter 1021 included in the gas cleaning device 1020 cleans by removing particles contained in the exhaust gas Gd discharged from the wafer transfer chamber 1011 , and by cleaning the cleaned By supplying the gas Gc to the wafer transfer chamber 1011, the inside of the wafer transfer chamber 1011 can be maintained in a clean gas atmosphere. In addition, the plurality of EFEMs 1010 to 1010 share the gas cleaning device 1020, and since the gas cleaning device 1020 does not need to be provided in each EFEM 1010, the structure of each EFEM 1010 can be simplified, and the installation area and cost reduction can be achieved.

In addition, since the gas cleaning device 1020 is provided with a blower 1024, which is a means for blowing the gas from the gas return passage 1040 in the direction toward the gas supply passage 1030, the gas cleaning device 1020 and each wafer transfer chamber 1011 can be cleaned. The circulation of the gas between them is carried out efficiently.

Furthermore, the gas cleaning device 1020 is configured to include a chemical filter 1023 that removes molecular contaminants present in the returned gas, so that the inflow from the processing device 1001 connected to the wafer transfer chamber 1011 can be prevented. Molecular contaminants circulated through the system can keep the wafer transfer chamber 1011 in a suitable gas atmosphere.

In addition, since the gas cleaning device 1020 includes a dryer 1022 that removes moisture in the gas, it can effectively prevent the quality of the wafers W from deteriorating due to moisture in the wafer transfer chamber 1011 .

In addition, since the gas introduction means 1060 for introducing nitrogen into the midway position of the gas supply passage 1030 and the gas suction means 1070 for sucking gas from the midway position of the gas return passage 1040 are further provided, the circulation passage Ci In the wafer transfer chamber 1011, the gas in the gas is replaced with a nitrogen atmosphere, and oxygen and residual gas generated by the process are prevented from adhering to the surface of the wafer in the wafer transfer chamber 1011, thereby changing the surface properties of the wafer W, preventing a decrease in yield, and the wafer transfer chamber. When a part of the gas in the 1011 flows out to the outside, it becomes a gas that can be supplied to flow out, so that the state in the wafer transfer chamber 1011 is kept constant.

In addition, the EFEM 1010 includes a gas supply port 1015 provided at the upper portion of the wafer transfer chamber 1011 and connected to the gas supply path 1030, and a gas discharge port provided at the lower portion of the wafer transfer chamber 1011 and connected to the gas return path 1040. The wafer transfer chamber 1011 is configured to have a 1018 structure, and a downflow flowing from the gas supply port 1015 to the gas discharge port 1018 is generated in the wafer transfer chamber 1011. Therefore, the particles adhering to the upper part of the wafer W can be removed and the particles can be prevented from being trapped in the wafer transfer chamber. Float in 1011.

In addition, the gas supply port 1015 is connected to a fan 1016 a as an air blowing means for sending nitrogen supplied from the gas supply passage 1030 into the wafer transfer chamber 1011 , and a fan 1016 a that is supplied from the gas supply passage 1030 . Since the fan filter unit 1016 of the dust filter 1016b cleaned by the nitrogen is formed, the downdraft can be efficiently generated in the wafer transfer chamber 1011, and the adhesion of particles to the wafer W can be prevented.

In addition, since the gas circulating in the circulation path Ci is nitrogen, which is an inert gas, changes in the properties of the surface of the wafer W due to oxygen and moisture can be suppressed, thereby preventing a decrease in yield.

In addition, the specific structure of each part is not limited only to the above-mentioned 2nd Example.

For example, in the above-mentioned second embodiment, each EFEM 1010 has the same internal volume, and the processing devices 1001 connected to each EFEM 1010 are all performing the same type of process, but each EFEM 1010 and the processing device 1001 in the EFEM system are Different constituents can also, yes It is also possible to perform different processing steps on the wafer W.

Furthermore, according to the above-mentioned structure, it is possible to modify the structure as shown in FIG. 11 . In this figure, the same reference numerals are attached to the same parts as those of the above-described second embodiment, and descriptions of these parts are omitted. In this modification, a gas supply path 1130 is formed together with the first supply path 1031, and valves 1133 to 1133 are respectively provided in the middle of the second supply paths 1132 to 1132 connecting the first supply path 1031 and the EFEMs 1010, respectively. The first return passage 1041 together constitutes a gas return passage 1140, and valves 1143 to 1143 are provided in the middle of the second return passages 1142 to 1142 connecting the first return passage 1041 and the EFEMs 1010, respectively, which is different from the above-described embodiment. . In this case, the controller 1150 performs the opening and closing control of the valves 1133 to 1133 and the valves 1143 to 1143 in addition to the control in the above-described embodiment.

With this configuration, under the control of the controller 1150, the valve 1133 provided in the second supply path 132 connected to the EFEM 1010 in operation stopped, and the valve 1143 provided in the second return path 142 connected to the EFEM 1010 are similarly provided. When closed, the purge gas Gc can be prevented from flowing into the EFEM 1010 which is stopped, the introduction amount of nitrogen by the gas introduction means 1060 can be reduced, and the circulation flow area of the circulation path Ci2 can be reduced, so the blower 1024 can also be reduced. The amount of air supply can be reduced to achieve cost reduction. In particular, when the inside of the wafer transfer chamber 1011 is made airtight during maintenance of the EFEM 1010, etc., if the valve 1133 and the valve 1143 are not connected, a large amount of nitrogen will flow out. Maintenance of a specific EFEM1010 can be performed while the other EFEM1010~1010 are movable. Furthermore, it is also considered that the controller 1150 is configured to perform control to adjust the flow rates of the gases flowing through the valves 1133 to 1133 and the valves 1143 to 1143 . With this configuration, in particular, when each EFEM 1010 in the EFEM system has a different configuration, and when each EFEM 1010 is connected to a processing apparatus 1001 that performs different processing steps on the wafer W, the corresponding EFEM 1010 The atmosphere in the wafer transfer chamber 1011 can adjust the flow rate of the gas, so that the usage amount of the gas can be reduced.

In addition, other modified examples may be configured as shown in FIG. 12 . In this figure, the same reference numerals are attached to the same parts as those of the second embodiment described above, and descriptions thereof are omitted. In this modification, the gas cleaning device 1220 and each EFEM 1010 are connected to the gas supply path 1230 and the gas return path 1240, respectively, and the controller 1250 is configured to control the circulation of the plurality of circulation paths Ci3 to Ci3. In this case, the gas introduction means 1260 and the gas suction means 1270 are preferably directly connected to the gas cleaning device 1220 through the valve 1261 and the valve 1271 . In addition, in the case of such a configuration, since the gas is not communicated between the EFEMs 1010 to 1010, for example, when a large number of particles and molecular pollutants are generated in a certain EFEM 1010, the inclusion of such particles and molecular pollutants can be reliably prevented. The gas of the substance flows into the other EFEMs 1010 to 1010 without passing through the gas cleaning device 1220 .

Furthermore, in the above-described second embodiment, the wafer W is transported between the FOUPs 1014 to 1014 provided on the load ports 1013 to 1013 and the load lock chamber 1002, but the wafer W may also be used between the FOUPs 1014 to 1014. handover, etc.

In the above-described second embodiment, although the object to be conveyed by the wafer conveying device 1012 is assumed to use the wafer W, the present invention can be applied to various precision-processed products such as glass substrates. The EFEM system of the EFEM1010 object.

Furthermore, in the second embodiment described above, the gas introduction means 1060 is provided in the first supply passage 1031 and the gas suction means 1070 is provided in the first return passage 1041, but the installation positions of these gas introduction means 1060 and gas suction means 1070 are It is not limited, and may be provided at any place in the circulation path Ci. Furthermore, when the load port 1013 included in each EFEM 1010 is provided with nitrogen supply means for purifying nitrogen into the FOUP 1014, nitrogen supply is performed by the nitrogen supply means in a state where the FOUP 1014 and the wafer transfer chamber 1011 are communicated. Nitrogen may also be introduced into the circulation path Ci. In this case, even if the gas introduction means 1060 is not provided, the nitrogen purification in the circulation path Ci can be performed using the same equipment as the conventional one.

Furthermore, in the second embodiment described above, the discharge of the gas by the gas suction means 1070 and the supply of nitrogen by the gas introduction means 1060 are performed simultaneously in the initial stage of the nitrogen circulation control, but first the gas suction means 1070 It is possible to make the circulation path Ci into a negative pressure by exhausting the gas, and then supply nitrogen into the circulation path Ci through the gas introduction means 1060, so that the circulation path Ci in the atmospheric atmosphere may be a nitrogen atmosphere. By doing so, nitrogen purification can be performed more efficiently.

In the second embodiment described above, nitrogen was used as the gas for replacing the atmosphere in the circulation path Ci, but various gases such as dry air and argon can be used for the corresponding treatment.

In addition, the gas cleaning device 1020 in the above-described second embodiment is provided with a dryer for reducing the humidity in the circulation path Ci, a cooler for reducing the temperature, an ionizer for removing electricity from the wafer W, and the like , the environment of the circulating gas may be improved, that is, the environment in the wafer transfer chamber 1011 may be more suitable for the processing of the wafer W.

In addition, fans may be installed at appropriate locations of the gas supply path 1030 and the gas return path 1040 in the second embodiment described above, and the gas circulation may be further accelerated.

Other configurations can be variously modified without departing from the scope of the present invention.

&lt;The third embodiment&gt;

In the above-described first and second embodiments, if the volume of the wafer transfer chambers 9 and 1011 is increased, the cost of gas to be filled in this part increases, and a long time is required for gas replacement. Here, in the third to ninth embodiments, attention is paid to a substrate transfer device suitable for EFEM, and the object is to provide a substrate transfer device and an EFEM equipped with the substrate transfer device, which can appropriately carry out the transfer of The substrate is not exposed to an atmosphere that causes changes in surface properties and adhesion of particles, suppression of adhesion of particles to the substrate, and management of substrate surface properties.

The substrate transfer apparatus of the EFEM applied to the third embodiment is constituted by the wafer transfer apparatus 2002 that transfers the wafer W as a substrate, and is one of the constituent elements of the EFEM 2001 shown in FIG. 13 . The EFEM 2001 is composed of a main body 2011, which is a mechanical device, and a controller 2009 for controlling the operation. The main body 2011 is equipped with a wafer transfer device 2002, which can be used to transfer wafers W between predetermined transfer positions. transport. In addition, a frame body 2051 is provided so as to surround the wafer transfer device 2002. The frame body 2051 is provided with frame walls 2051a to 2051d and a ceiling wall 2051e (refer to FIG. 16) that surround the wafer transfer device 2002 in four directions. , a wafer transfer chamber 2005 that forms a substantially closed space is internally constituted. Further, a plurality of (three in the figure) loading ports 2061 to 2061 are provided adjacent to the outer side of one frame body wall 2051a, and the wafer transfer chamber 2005 described above and the wafer transfer device 2002 provided therein are provided by these and the above-mentioned wafer transfer chamber 2005. The body 2011 that constitutes EFEM2001.

In addition, in the figure, the state in which the FOUP 2062 is mounted on the load port 2061 is shown. Each load port 2061 is provided with a door 2061a, and the door 2061a moves together in connection with a cover portion 2062a provided in the FOUP 2062, so that the FOUP 2062 is opened to the wafer transfer chamber 2005. In the FOUP 2062, the mounting portions 2062b and 2062b for supporting one wafer W in pairs are provided in a plurality of vertical directions, and a plurality of wafers W can be accommodated by using these. In addition, the FOUP 2062 is usually filled with nitrogen gas, and the atmosphere in the FOUP 2062 may be replaced with nitrogen through the loading port 2061 .

And it becomes a load lock chamber 2081 that can be connected to the outer side of the frame wall 2051c facing the load port 2061 and constitutes a part of the processing apparatus 2008. By opening the door 2081a of the load lock chamber 2081, it becomes possible to load the wafer A state in which the transfer chamber 2005 and the load lock chamber 2081 communicate with each other. Although various types of processing apparatuses 2008 can be used, generally, a transfer chamber 2082 is provided adjacent to the load lock chamber 2081, and a plurality of processing chambers 2082 (three in the figure) are further provided adjacent to the processing device 2082. Configuration of unit 2083. Doors 2082a and 2083a to 2083a are provided between the transfer room 2082, the load lock room 2081, and the processing units 2083 to 2083, respectively. By opening these doors, they can communicate with each other and can be used in the transfer room. The transfer robot 2082b in the 2082 moves the wafer W between the load lock chamber 2081 and the processing units 2083-2083.

The wafer transfer apparatus 2002 is roughly composed of a guide rail 2026 constituting a predetermined rail, a moving chamber 2003 movable along the guide rail 2026 as shown in FIG. 14 , and a transfer arm 2024 provided therein.

FIG. 15 is an enlarged plan view showing the vicinity of the moving chamber 2003 of the wafer transfer apparatus 2002 , and FIG. 16 is a front view showing the situation as seen from the extending direction of the guide rail 2026 . Hereinafter, the detailed structure of the wafer transfer apparatus 2002 will be described with reference to FIG. 15 and FIG. 16 .

First, in the housing 2051, a fixed table 2021 is provided on the floor F from the housing wall 2051a on the side of the loading port 2061 across the housing wall 2051c on the side of the load lock chamber 2081 to form a movable table 2022 in the shape of a rectangular plate. It is supported on the fixed platform 2021 through the guide rails 2026 and the rollers 2027 . The fixed table 2021 is used to increase the height of the movable table 2022, and the height can be adjusted as required. The guide rails 2026 are linearly arranged so as to be parallel to the casing walls 2051a and 2051c (refer to FIG. 13) to form a linear track, and the movable table 2022 is driven along the The guide rails 2026 are movable.

In the center of the movable table 2022, a base 2023 having a substantially cylindrical shape is provided, and the conveyance arm 2024 is supported on the upper part of the base 2023. The transfer arm 2024 can have various structures that are generally known. For example, a SCARA-type horizontal articulated robot arm, a link-type arm robot, and the like can be optimally used. In this embodiment, the conveying arm 2024 is mainly composed of a plurality of arm elements 2024a to 2024c. By moving these relative to each other, the entire arm element 2022 can be extended. A U-shaped plate-shaped fork 2025 is provided in front of the arm element 2024c at the end so that the wafer W can be placed thereon. In addition, the conveyance arm 2024 can be rotated horizontally with respect to the base 2023, and the fork 2025 may be directed in any direction of the housing walls 2051a and 2051c.

With the above-described configuration, the wafer transfer apparatus 2002 is capable of placing the wafer W placed on the fork 2025 constituting the transfer arm 2024 in a direction parallel to the frame walls 2051a and 2051c and perpendicularly intersecting. 2-axis movement in the direction. Furthermore, the susceptor 2023 can also be moved up and down, and by combining this operation, the wafer W can be lifted by the fork 2025, and the wafer W on the fork 2025 may be transferred to a predetermined transfer position. In the EFEM 2001 of the present embodiment, the FOUPs 2062 provided in the plurality of load ports 2061 and the load lock chambers 2081 (refer to FIG. 13 ) facing them are set as transfer positions for transferring the wafers W, and the During this time, the wafer W can be moved using the wafer transfer apparatus 2002 .

Further, on the movable table 2022, wall parts 2031 to 2034 are arranged so as to surround the four sides of the conveying arm 2024, and the top wall 2035 is provided by connecting with these wall parts 2031 to 2034 and the top wall 2035. Together with the movable table 2022, a cube-shaped moving chamber 2003 is formed. The moving chamber 2003 is a substantially closed space made substantially closed inside, and accommodates the above-mentioned conveyance arm 2024 and the base 2023 therein, and is movable along the guide rails 2026 together with these. The space in the moving chamber 2003 is the size in the height direction that is necessary for the lifting and lowering of the transfer arm 2024, and the size in the extending direction of the guide rail 2026 is made the transfer arm 2024 holds the wafer W on the fork 2025. It is the size necessary for the rotation in the state of the above, so that it does not become an excessively large volume.

Among the wall portions 2031 to 2034 constituting the moving chamber 2003 , the wall portion 2031 on the side of the load port 2061 and the wall portion 2033 on the side of the load lock chamber 2081 are respectively formed on the fork 2025 at the tip of the conveyance arm 2024 and placed thereon. The openings 2031a and 2033a that can be accessed in the state of the wafer W are provided. These openings 2031a and 2033a are of a size necessary for the entry and exit of the conveyance arm 2024, and since they are not unnecessarily large, the interior of the moving chamber 2003 becomes a substantially closed space that can be almost hermetically sealed.

In addition, the wall portions 2031 and 2033 in which the openings 2031a and 2033a are formed are provided in close proximity to the frame wall 2051a provided adjacent to the loading port 2061 and the inner side of the frame wall 2051c provided adjacent to the load lock chamber 2081, respectively, because The state of being close to the frame wall 2051a or the frame wall 2051c can also be maintained during the movement along the guide rail 2026, so the intrusion of gas and particles from the outside to the inside of the moving chamber 2003 can be suppressed regardless of the position and operation of the moving chamber 2003. That is, the moving chamber 2003 is a substantially airtight space with a higher degree of airtightness formed in cooperation with the frame body wall 2051a and the frame body wall 2051c.

In addition, in the upper part of the ceiling wall 2035 constituting the moving chamber 2003, gas supply ports 2041a to 2041a are provided in the center and at five corners, and these gas supply ports 2041a to 2041a are connected to the gas not shown in the figure. The supply sources are connected by flexible pipes 2041b to 2041b that are pipes. The flexible tubes 2041b to 2041b are formed by winding at least a part in a spiral shape, and can expand and contract with the movement of the moving chamber 2003 . These gas supply sources, the gas supply port 2041a, and the flexible tube 2041b constitute the gas supply means 2041, and can control the supply and stop of the gas supply, and the flow. By supplying gas, the gas is ejected downward from the gas supply ports 2041a to 2041a in the moving chamber 2003, respectively, so that the concentration of the re-supplied gas can be increased while squeezing out the gas remaining in the interior. In this embodiment, the gas supplied by the gas supply means 2041 is nitrogen gas, but other gases may be used without limitation.

Furthermore, in the wall part 2034 which comprises the moving chamber 2003, the exhaust damper 2042 which is a gas discharge means for discharging gas is provided. The exhaust damper 2042 is provided with a shutter (not shown), and operates in accordance with a command from the controller 2009, and by opening the shutter, the interior and the exterior of the moving chamber 2003 can be communicated. In this case, by using in combination with the supply of the gas generated by the gas supply means 2041 described above, the main gas is discharged from the exhaust baffle 2042, so that the gas purification in the moving chamber 2003 can be efficiently performed.

Furthermore, as shown in FIG. 13, when the moving chamber 2003 is moved to the standby position set at one end of the guide rail 2026, the exhaust damper 2042 and the frame wall 2051d provided in the frame 2051 can be connected. The exhaust duct 2043 is connected. In this state, by opening the on-off valve 2043a provided in the exhaust duct 2043, the inside of the moving chamber 2003 and the outside of the wafer transfer chamber 2005 can be communicated. In this way, the gas in the moving chamber 2003 can be directly released to the outside of the EFEM 2001 by the gas cleaning, so that the inner space of the wafer transfer chamber 2005 is not polluted in the initial state where the cleanliness of the interior of the moving chamber 2003 is low. It can be used when releasing gas to the outside. Of course, when the cleanliness of the moving chamber 2003 is better than that of the wafer transfer chamber 2005 , the gas may be exhausted from the exhaust duct 2043 of the moving chamber 2003 toward the inside of the wafer transfer chamber 2005 .

In order to control the main body 2011 of the EFEM 2001 including the above-described wafer transfer apparatus 2002, the EFEM 2001 includes a controller 2009 shown in FIG. 13 . The controller 2009 is composed of a normal microprocessor having a CPU, a memory, and an interface, and stores programs necessary for processing in the memory in advance. A person who cooperates with hard resources to realize the desired function.

The controller 2009 is configured to include a moving room position control unit 2091 , an arm position control unit 2092 , a lift position control unit 2093 , a gas supply control unit 2094 , a gas discharge control unit 2095 , and a time control unit 2096 .

The moving chamber position control unit 2091 moves the moving chamber 2003 along the guide rail 2026 by applying a drive command to a drive means (not shown), and can be stopped at an arbitrary position. The arm position control unit 2092 applies a driving instruction to an actuator (not shown) provided in the base 2023. It is instructed to perform operations of changing the direction of the conveyance arm 2024 and extending and contracting to an arbitrary length. The raising and lowering position control unit 2093 can set the conveying arm 2024 at an arbitrary height position by applying a drive command to the raising and lowering actuator (not shown) incorporated in the base 2023 to perform the raising and lowering operation. The gas supply controller 2094 is a controller of the gas supply by giving a command to the gas supply means 2041, except for starting and stopping the gas supply, so that the flow rate of the gas can be changed. The gas discharge control unit 2095 can perform the opening and closing of the shutter of the exhaust damper 2042 provided in the moving chamber 2003 and the opening and closing valve 2043a of the exhaust duct 2043 provided in the casing 2051 by outputting a drive command. Opening and closing. The time control unit 2096 supplies and discharges the gas at a predetermined time in accordance with the time data stored therein, and applies an operation command to the gas supply control unit 2094 and the gas discharge control unit 2095 . The gas supply control unit 2094 and the gas discharge control unit 2095 perform interlocking control by starting or stopping control, or changing the content of control in accordance with operation commands given to them.

The wafer transfer apparatus 2002 configured as described above is operated under the control of the controller 2009, and the wafer W can be transferred as follows.

Here, as an example, the case where the wafer W is transferred to the load lock chamber 2081 from the FOUP 2062 connected to the load port 2061, which is one of the delivery positions, will be described.

First, as shown in FIG. 13, the wafer transfer apparatus 2002 moves the moving chamber 2003 to the vicinity of one end (upper side in the drawing) of the guide rail 2026 in accordance with a drive command from the moving chamber position control unit 2091 and stands by Location. Then, nitrogen gas is supplied from the gas supply means 2041 in accordance with an operation command from the gas supply control unit 2094 . Further, a drive command is output from the gas discharge control unit 2095 in accordance with the command from the time control unit 2096, and the shutter provided in the exhaust damper 2042 of the moving chamber 2003 and the exhaust gas provided in the casing 2051 are outputted. The on-off valve 2043a of the conduit 2043 is opened. In this way, the nitrogen gas is supplied to the inside of the moving chamber 2003 , and the gas that has stayed in the moving chamber 2003 up to this point is discharged to the outside of the casing 2051 by passing through the exhaust baffle 2042 , and the inside of the moving chamber 2003 is exhausted. gas purification.

When a predetermined time elapses and the concentration of nitrogen gas increases to a certain level or higher, the damper of the exhaust damper 2042 and the exhaust duct 2043 are closed in accordance with a driving command from the gas discharge control unit 2095 . Also, as described above, since the volume in the moving chamber 2003 is sufficiently small, the amount of nitrogen gas required for gas purification may be very small compared to the case where the entire gas in the wafer transfer chamber 2005 is purified. It is possible to save the cost of gas and the time for gas purification.

When the shutter of the exhaust damper 2042 and the exhaust duct 2043 are closed, the interior of the moving chamber 2003 is a substantially closed space, so by continuing to supply nitrogen gas, the pressure inside the moving chamber 2003 can be made higher than that of the outside. Higher positive pressure. In this way, it is possible to suppress the intrusion of air and particles containing moisture into the moving chamber 2003 through the openings 2031a and 2033a. Further, the supply of nitrogen gas from the gas supply means 2041 is continued, and in accordance with an operation command from the gas supply control unit 2094, it is reduced to a flow rate that can maintain the interior of the moving chamber 2003 at a positive pressure level. In this way, the amount of nitrogen gas used can be further reduced. The timing of the control by the gas supply control unit 2094 and the gas discharge control unit 2095 as described above is determined by the time control unit 2096, but is not limited to this, and a timer or the like may be used.

After increasing the nitrogen gas concentration in the moving chamber 2003 as described above, the moving chamber 2003 is moved according to the driving command from the moving chamber position control unit 2091. As shown in FIG. 14, the transfer object, that is, the FOUP 2062 in which the wafer W is accommodated, is the same as the loaded FOUP 2062. The installed load port 2061 is opposite.

Next, the door 2061a of the loading port 2061 and the cover 2062a of the FOUP 2062 are opened by the command from the controller 2009 (see FIG. 13), and the conveying arm is moved by the lift position control unit 2093 (see FIG. 13). The fork 2025 at the tip of the 2024 is positioned slightly below the wafer W, which is a transfer object. And, as shown in FIG. 17, the conveying arm 2024 is extended by the arm position control part 2092 (refer FIG. 13), and the tip of the conveying arm 2024 is inserted and withdrawn from the opening 2031a, and enters into the FOUP 2062. At this time, the fork 2025 enters while having a slight gap directly below the wafer W. Furthermore, the conveying arm 2024 is raised by the raising/lowering position control unit 2093 (see FIG. 13 ), and the wafer W is raised and supported by the fork 2025 .

From this state, the transfer arm 2024 is shortened by the arm position control unit 2092 (see FIG. 13 ), and as shown in FIG. 18 , the fork 2025 and the wafer W placed thereon can be moved toward the moving chamber through the opening 2031 a Internal introduction and containment in 2003. Since the wafer W is accommodated in the moving chamber 2003 immediately after exiting the FOUP 2062, it is hardly exposed to the air atmosphere in the frame body 2051. Therefore, adhesion of the particles to the surface of the wafer W is suppressed, and oxidation and adhesion of moisture by the air atmosphere can also be suppressed. After the wafer W is housed in the moving chamber 2003, the door 2061a of the load port 2061 and the lid 2062a of the FOUP 2062 are closed to keep the inside of the FOUP 2062 as clean as possible. Further, in order to supplement the nitrogen flowing out from the inside of the FOUP 2062, it is also preferable to supply new nitrogen gas from the loading port 2061 after closing the lid portion 2062a.

Next, according to a drive command from the moving chamber position control unit 2091 (see FIG. 13 ), the moving chamber 2003 is moved along the guide rails 2026 to face the load lock chamber 2081, and the door 2081a of the load lock chamber 2081 is opened. Further, as shown in FIG. 19 , the conveying arm 2024 is rotated and extended toward the load lock chamber 2081 side in accordance with a drive command from the arm position control unit 2092 (refer to FIG. 13 ). Then, the fork 2025 at the tip of the transfer arm 2024 and the wafer W are taken in and out through the opening 2033 a and into the load lock chamber 2081 . Further, the transfer arm 2024 is lowered from the fork 2025 by a command from the lift position control unit 2093 (see FIG. 13 ) to transfer the wafer W onto a mounting table (not shown) in the load lock chamber 2081 .

As described above, when the wafer W is transferred from the FOUP 2062 to the load lock chamber 2081 by using the wafer transfer apparatus 2002, the transfer arm 2024 is covered by the replacement even if the atmosphere of the entire inside of the wafer transfer chamber 2005 is not replaced. The local atmosphere in the moving chamber 2003 configured in such a manner can maintain the surface state of the wafer W appropriately.

Also, when the wafer W is transferred from the load lock chamber 2081 to the FOUP 2062 , the local atmosphere around the wafer W can be similarly replaced by performing the above-described operations in reverse.

As described above, the wafer transfer device 2002 serving as a substrate transfer device in the present embodiment is a carrier that transfers wafers W serving as substrates between the load ports 2061 to 2061 and the load lock chamber 2081 at a plurality of transfer positions. The interior is a substantially closed space by covering the surroundings with walls 2031 to 2034, and includes a moving chamber 2003 that is movable along guide rails 2026 constituting predetermined rails and is opposed to the loading ports 2061 to 2061 and the load lock chamber 2081, and a The fork 2025 at the tip can hold the wafer W in the transfer arm 2024, and the fork 2025 can be accommodated in the moving chamber 2003 together with the wafer W. In and out, between the load ports 2061 to 2061 facing the moving chamber 2003 and the load lock chamber 2081, a transferer of the wafer W can be formed.

Because of this configuration, in a state where the moving chamber 2003 faces one of the load ports 2061 to 2061 and the load lock chamber 2081, the wafer W is collected through the openings 2031a and 2033a by the fork 2025 at the tip of the transfer arm 2024, and the fork 2025 and the The wafers W are accommodated in the moving chamber 2003 together, and the moving chamber 2003 is moved so as to face the other load ports 2061 to 2061 or the load lock chamber 2081, so that the wafers W can be transferred from the transfer arm 2024 through the openings 2031a and 2033a. handover. Since the inside of the moving chamber 2003 is a substantially closed space, it is possible to transfer the wafers W with little exposure to the outside air, and it is possible to suppress adhesion of particles contained in the outside air. Furthermore, since the inside of the moving chamber 2003 is purged with nitrogen gas, it can be used for the control of the change in the characteristics of the surface and the preparation process for the processing to the wafer W performed after the handover. In addition, in order to change the surrounding of the wafer W during transportation to a nitrogen atmosphere, it is sufficient to perform gas purification only in the moving chamber 2003, which is formed as a substantially closed space, so that the amount of gas to be supplied can be reduced and the cost can be reduced. and shortening of time.

In addition, since the gas supply means 2041 for supplying the gas into the moving chamber 2003 and the exhaust baffle 2042 as the gas discharge means for discharging the gas from the moving chamber 2003 are provided, the exhaust baffle 2042 is used. By exhausting the gas in the moving chamber 2003 and supplying nitrogen gas into the moving chamber 2003 by using the gas supply means 2041, the gas purification in the moving chamber 2003 can be performed to increase the nitrogen gas concentration and the nitrogen gas atmosphere can be changed. Changes in the properties of the surface of the wafer W being transported are suppressed.

In addition, since the air pressure in the moving chamber 2003 is set to be higher than the air pressure outside the moving chamber 2003, it is possible to suppress the inflow of gas into the moving chamber 2003 from other than the gas supply means 2041, and suppress the flow of particles from the outside to the moving chamber 2003. The moving chamber 2003 penetrates into and adheres to the surface of the wafer W. As shown in FIG.

Further, the EFEM 2001 in the embodiment of the present application includes the above-mentioned wafer transfer device 2002 and a frame body 2051 covering the periphery of the wafer transfer device 2002 , and the frame body walls 2051 a and 2051 c constituting the frame body 2051 are adjacent to the frame body 2051 . The transfer positions, that is, the load ports 2061 to 2061 and the load lock chamber 2081 are set externally, and the moving chamber 2003 of the wafer transfer apparatus 2002 is kept close to the walls 2031 and 2033 provided with the openings 2031 a and 2033 a to constitute the frame. The inside of the frame walls 2051a and 2051c of the 2051 is configured to be movable along the guide rails 2026. Therefore, the moving chamber 2003 constituting the wafer transfer apparatus 2002 is the wall 2031 in which the openings 2031a and 2033a are provided. 2033 move in a state close to the inner side of the casing walls 2051a and 2051c, so the intrusion of gas and particles into the moving chamber 2003 through the openings 2031a and 2033a can be suppressed, and the supply of nitrogen into the moving chamber 2003 can also be suppressed. The outflow of gas achieves the saving of gas supply.

&lt;The fourth embodiment&gt;

FIG. 20 is a schematic diagram showing a wafer transfer apparatus 2102 as a substrate transfer apparatus according to the fourth embodiment, and an EFEM 2101 including the same. In this figure, the same reference numerals are attached to the same parts as those of the third embodiment, and the description thereof will be omitted.

The EFEM 2101 is composed of a main body 2111 and a controller 2109 for controlling this. The main body 2111 is provided with a wafer transfer apparatus 2102 including a moving chamber 2103 . In the wafer transfer apparatus 2102 in this embodiment, the wall portion 2031 on the side of the load port 2061 constituting the moving chamber 2103 is provided with the opening and closing doors 2136A and 2136B which can open and close the opening 2031a, and the wall portion on the side of the load lock chamber 2081 is provided. 2033, the point at which the opening and closing door 2137 which can open and close the opening 2033a is provided is characteristic.

The opening and closing doors 2136A, 2136B, and 2137 can be slid independently in the extending direction of the guide rail 2026 by an actuator (not shown). In addition, the opening and closing doors 2136A, 2136B, 2137 may be configured to slide in other directions as long as the openings 2031a, 2033a can be opened and closed, and they may be rotated instead of sliding, and more complicated operations may be performed using a link mechanism or the like. is allowed.

In addition, the controller 2109 is provided with an opening and closing door control unit 2197, and the opening and closing door control unit 2197 outputs a drive command to the above-mentioned actuator to slide the opening and closing doors 2136A, 2136B, and 2137, so that the openings 2031a and 2033a can be moved. open or closed. Furthermore, the time control unit 2196 included in the controller 2109 manages the opening and closing in addition to the management of the control time points by the gas supply control unit 2094 and the gas discharge control unit 2095 described above in the third embodiment. The timing of the opening and closing operations of the doors 2136A, 2136B, and 2137.

By closing the openings 2031a and 2033a using the opening and closing doors 2136A, 2136B and 2137, the airtightness in the moving chamber 2103 can be improved. Therefore, when the conveying arm 2024 does not need to protrude from the openings 2031a and 2033a, the opening and closing When the doors 2136A, 2136B, and 2137 are closed, the concentration of nitrogen gas in the moving chamber 2103 can be increased, and the usage amount can be reduced.

Even in the case of the above-described configuration, the same functions and effects as those of the third embodiment described above can be obtained.

Furthermore, the wafer transfer device 2102 serving as a substrate transfer device in the present embodiment is configured to include opening and closing doors 2136A, 2136B, and 2137 for opening and closing the openings 2031a and 2033a, so it is not necessary to transfer the transfer device through the openings 2031a and 2033a. When the tip of the arm 2024 goes in and out, the openings 2031a and 2033a are closed by the opening and closing doors 2136A, 2136B and 2137, so that the airtightness in the moving chamber 2103 can be improved, the intrusion of gas and particles from the outside can be suppressed, and the The amount of nitrogen gas used and the concentration of nitrogen gas supplied into the moving chamber 2103 can be reduced.

&lt;Fifth embodiment&gt;

FIGS. 21 and 22 are schematic views showing a wafer transfer apparatus 2202 as a substrate transfer apparatus according to the fifth embodiment, and an EFEM 2201 including the same. In this figure, the same reference numerals are attached to the same parts as those of the third and fourth embodiments described above, and the description thereof will be omitted.

The EFEM 2201 is composed of a main body 2211 and a controller 2009 (see FIG. 13 ) that controls the main body 2211 , and the main body 2211 includes a wafer transfer apparatus 2202 including a moving chamber 2203 . The wafer transfer apparatus 2202 in this embodiment is characterized in that the wall portion 2231 on the side of the loading port 2261 constituting the moving chamber 2203 is provided with an opening and closing door 2236 capable of opening and closing the opening 2231a.

And as shown to FIG. 21 (a), the loading port 2261 is provided with the door 2261a which can be connected with the cover part 2062a of the FOUP2062. Below the door 2261a, a support base 2261b extending in the horizontal direction is integrally provided, and a roller 2261c is provided at the end thereof. And this roller 2261c is comprised so that it can move along the rail 2261d while being position-restricted by engaging with the rail 2261d formed in a T-shape. Furthermore, an actuator (not shown) is connected to the support base 2261b, and the cover 2261a can be moved together with the support base 2261b in response to a command from the controller 2009 (see FIG. 13). Moreover, suitable connection means is provided in the door 2261a, and it can be connected with the cover part 2062a of FOUP2062 by one side, and can be connected with the opening and closing door 2236 by the other side.

The door 2261a becomes the cover part 2062a which can open the FOUP 2062, and the opening and closing door 2236 by operating as follows. First, as shown in Fig. 21(a), by placing the FOUP 2062 on the loading port 2261, the lid portion 2062a of the FOUP 2062 and one surface of the door 2261a are brought into contact and connected to each other. And, as shown in Fig. 21(b), the door 2261a moves in the direction of separation from the FOUP 2062 (the right direction in the figure), separates the cover 2062a from the main body of the FOUP 2062, and separates the other surface of the door 2261a from the opening and closing door 2236 Contact connects the two. Furthermore, as shown in Fig. 22(a), the wall portion 2231 of the moving chamber 2203 is slightly separated, and the opening and closing door 2236 is separated from the opening 2231a. 22(b), between the frame wall 2051a of the wafer transfer chamber 2005 and the wall portion 2231 of the moving chamber 2203, the door 2261a is lowered while the lid portion 2062a and the opening and closing door 2236 are connected. In this way, the insides of the opening 2231a and the FOUP 2062 can be opened to each other.

In addition, in the case of this structure, the distance between the frame wall 2051a of the wafer transfer chamber 2005 and the wall portion 2231 of the moving chamber 2203 is also increased by design in order to secure a space for introducing the door 2261a below. In this case, it is preferable to form the sealing portion X by protruding a plate-shaped cover member from either or both of the moving chamber 2203 and the housing wall 2051a.

Even in the case of such a configuration, the same effects as those of the third and fourth embodiments described above can be obtained, and furthermore, the opening and closing of the opening and closing door 2236 can be realized by a simple structure, and cost reduction can be achieved. The opening is performed in conjunction with the opening of the lid portion 2062a of the FOUP 2062, so that the intrusion of gas and particulates from the outside can be further suppressed.

&lt;Sixth embodiment&gt;

FIG. 23 is a schematic diagram showing a wafer transfer apparatus 2302 serving as a substrate transfer apparatus according to the sixth embodiment, and an EFEM 2301 having the same. In this figure, the same reference numerals are attached to the same parts as those of the third to fifth embodiments described above, and the description thereof will be omitted.

The EFEM 2301 is composed of a main body 2311 and a controller 2009 for controlling this. The main body 2311 is provided with a wafer transfer apparatus 2302 including a moving chamber 2303 . The wafer transfer apparatus 2302 in this embodiment is based on the configuration in the above-described third embodiment, and has a feature in that the filter member 2344 is arranged directly below the ceiling wall 2035 of the moving chamber 2303 .

The filter member 2344 is formed in almost the same size as the ceiling wall 2035, and the gas supplied from the gas supply ports 2041a to 2041a constituting the gas supply means 2041 passes through the filter member 2344 and is supplied to the inside of the moving chamber 2303.

Even if the gas supplied by the gas supply means 2041 contains fine particles, the same effect as that of the third embodiment described above can be obtained even in the case of such a configuration. The inside of the moving chamber 2303 is introduced, so that contamination of the wafer W can be further suppressed.

&lt;Seventh Embodiment&gt;

FIGS. 24 and 25 are schematic views showing a wafer transfer apparatus 2402 serving as a substrate transfer apparatus according to the seventh embodiment, and an EFEM 2401 including the same. In this figure, the same reference numerals are attached to the same parts as those of the third to sixth embodiments described above, and the description thereof is omitted.

The EFEM 2401 is composed of a main body 2411 and a controller 2409 for controlling this. The main body 2411 is provided with a wafer transfer apparatus 2402 including a moving chamber 2403 . The wafer transfer apparatus 2402 in this embodiment is based on the configuration in the above-described sixth embodiment, and includes a gas circulation means 2445 that takes in gas from below the moving chamber 2403 and reintroduces it from the upper portion of the moving chamber 2403 Points have characteristics.

The gas circulation means 2445 is composed of a circulation duct 2445a provided along the outer periphery of the moving chamber 2403, and a fan 2445b. By operating the fan 2445b, the air is released from the moving chamber 2403 through an opening provided below the wall portion 2034. The gas is taken out, and the gas is introduced again through the opening provided in the ceiling wall 2035 . Since the gas introduced from the top wall 2035 is introduced into the moving chamber 2403 through the filter 2344, it can be more clean. In addition, it is not necessary to return all of the gas extracted by the fan 2445b to the moving chamber 2403, but if necessary, a part of the extracted gas may be returned to the moving chamber 2403, and the remainder may be discharged to the outside.

In order to operate the gas circulation means 2445, the controller 2409 includes a gas circulation control unit 2498, and operates the fan 2445b in response to a drive command from the gas circulation control unit 2498, and can further change: start and stop of gas circulation, Flow rate of gas during circulation. In addition, the time control unit 2496 included in the controller 2409 manages the control time by the gas circulation control unit 2498 in addition to the control time by the gas supply control unit 2094 and the gas discharge control unit 2095 .

Even in the case of the above-described configuration, the same functions and effects as those of the sixth embodiment described above can be obtained.

Further, the wafer transfer apparatus 2402 serving as a substrate transfer apparatus in this embodiment is provided with a gas circulation for taking out the gas in the moving chamber 2403 , passing at least a part of the extracted gas through the filter 2344 and reintroducing the gas into the moving chamber 2403 . Since the means 2445 is configured, the atmosphere in the moving chamber 2403 can be made cleaner, and the adhesion of particles to the wafer W can be suppressed more.

&lt;The eighth embodiment&gt;

FIG. 26 is a schematic diagram showing a wafer transfer apparatus 2502 as a substrate transfer apparatus according to the eighth embodiment, and an EFEM 2501 including the same. In this figure, the same reference numerals are attached to the same parts as those of the third to seventh embodiments described above, and the description thereof will be omitted.

The EFEM 2501 is composed of a main body 2511 and a controller 2009 (refer to FIG. 13 ) that controls this. The main body 2511 includes a wafer transfer apparatus 2502 including a moving chamber 2503 . The wafer transfer apparatus 2502 in this embodiment is based on the configuration of the third embodiment, and the shape of the moving chamber 2503 and the supporting structure for supporting this are changed.

Specifically, in the wafer transfer device 2502 in this embodiment, the bottom wall portion 2521 constituting the lower surface of the frame body 2051 is provided on the floor F, and the guide rail 2026 and the rollers 2027 and 2027 are passed through the upper portion of the bottom wall portion 2521. A movable table 2022 is installed. That is, in this Example, the bottom raising structure by the fixing stand 2021 (refer FIG. 16) in 3rd Example is not provided. In addition, a base 2023 is provided on the movable table 2022, and a moving chamber 2503 is provided above the base 2023. The moving chamber 2503 is constituted by walls 2531, 2533 and the like surrounding the four sides of the conveyance arm 2024 except for the bottom wall 2536 and the top wall 2535, and forms a substantially closed space therein. Through the opening provided in the bottom wall 2536, the support column 2526 is raised upward from the upper part of the base 2023, and the conveyance arm 2024 is supported by the upper part of the support column 2526. And, the drive force is transmitted from the base 2023 to the conveyance arm 2024 by the appropriate transmission mechanism incorporated in the support|pillar 2526, and the conveyance arm 2024 can be extended and contracted.

In general, it refers to a portion composed of a transfer arm 2024 and a base 2023 having a mechanism for driving this. If it is often called a transfer robot arm, the configuration in this embodiment means that a transfer machine will be formed. A part of the conveying arm 2024 of the arm is accommodated in the moving room 2503, and a configuration may be provided in which a base 2023 forming another part is provided outside the moving room.

The structure in which the base 2023 is arranged outside the moving chamber 2503 in this way is also acceptable, and even in this case, the same effects as those of the third embodiment described above can be obtained.

&lt;Ninth Embodiment&gt;

FIG. 27 is a schematic diagram showing a wafer transfer apparatus 2602 as a substrate transfer apparatus according to the ninth embodiment, and an EFEM 2601 including the same. In this figure, the same reference numerals are attached to the same parts as those of the third to eighth embodiments described above, and the description thereof will be omitted.

The EFEM 2601 is composed of a main body 2611 and a controller 2609 for controlling this. The main body 2611 is provided with a wafer transfer apparatus 2602 including a moving chamber 2603 . The wafer transfer apparatus 2602 in this embodiment is based on the configuration of the third embodiment, and is characterized in that a heating bulb 2646 is provided inside the moving chamber 2603 as a heating means.

The heating bulb 2646 is supported by a support arm 2646a standing up from the side of the susceptor 2023, and is provided at a position facing the surface of the wafer W when the wafer W is positioned on the susceptor 2023. Also, the support arm 2646a may be separated from the base 2023 and may be configured to stand upright from the movable table 2022.

The controller 2609 includes a heater bulb control unit 2699, and the surface of the wafer W is heated by the radiant heat emitted from the heater bulb 2646 by applying a current to the heater bulb 2646 through the heater bulb control unit 2699. In addition to the heating bulb 2646, various types of heating means such as a generally known heating wire heater can be used.

By heating the surface of the wafer W by the heating bulb 2646, the attached water can be evaporated and removed, and can be used as a preliminary heating for processing after the transfer to the processing apparatus 2008 (see FIG. 13). In addition, the time control unit 2696 included in the controller 2609 manages the control time by the heating bulb control unit 2699 in addition to the control time by the gas supply control unit 2094 and the gas discharge control unit 2095 . In this way, when the wafer W has been introduced into the moving chamber 2602, the heating of the surface of the wafer W, the supply of gas to the surface of the wafer W, and the like can be performed at a suitable timing, which can be used as a preparatory process for subsequent processes. function optimally.

Even in the case of the above-described configuration, the same functions and effects as those of the third embodiment described above can be obtained.

Further, the wafer transfer device 2602 serving as the substrate transfer device in the present embodiment is provided in the moving chamber 2603 at a position that can face the wafer W on the transfer arm 2024, and has a function for heating the surface of the wafer W. Therefore, the surface of the wafer W on the transfer arm 2024 can be heated by the heating bulb 2646 during the transfer process, so that moisture can be removed and the surface of the wafer W caused by moisture can be removed. changes in characteristics, and preheating for processing after handover.

In addition, a controller 2609 for controlling the gas supply means 2041, the exhaust duct 2042 (refer to FIG. 13) and the heating bulb 2646 as the gas discharge means is provided. This controller 2609 further includes the gas supply means 2041. , the exhaust duct 2042 and the time control unit 2696 for controlling the operation timing of the heating bulb 2646, so that the heating and movement of the wafer W can be performed at the operation timing suitable for the wafer W and other processes. Gas purification in chamber 2603.

In addition, the specific structure of each part is not limited only to the above-mentioned 3rd - 9th embodiment.

For example, in the third to ninth embodiments described above, nitrogen gas was used as the gas for replacing the atmosphere around the wafer W, but various gases such as air and ozone can be used for the processing. Furthermore, even if clean air having a higher purity than that in the wafer transfer chamber 2005 is used, air heated to a high temperature by a heating means can be used.

In addition, in the third to ninth embodiments described above, the wafer W is transported between the FOUP 2062 provided on the load port 2061 and the load lock chamber 2081 , but the wafer W may be used for transferring the FOUP 2062 and the FOUP 2062 . situation etc. Only when transferring between the FOUPs 2062 and 2062 is performed, only the configuration in which the opening 2031 a is provided in one of the wall portions 2031 of the moving chamber 2003 is sufficient.

Furthermore, in the above-described third to ninth embodiments, the guide rails 2026 constituting the predetermined tracks are formed in a linear shape, and the moving chamber 2003 also moves linearly along with this. However, the shape of the guide rails 2026 is not limited to this, and a plurality of straight lines and It is also possible to move the moving chamber 2003 in the other direction for the combination of the curves. Furthermore, if the guide rails 2026 are arranged to extend in the up-down direction, the moving chamber 2003 may be moved in the up-down direction. The movement direction of the moving chamber 2003 is not limited to the guide rail 2026 if it is possible to restrict the movement direction, and the rail may be constituted by other means such as guide rollers and pull wires.

In the third to ninth embodiments described above, when the fork 2025 is introduced into the moving chamber 2003, the entire transfer arm 2024 is configured to be accommodated in the moving chamber 2003. It suffices that at least the fork 2025 at the tip of the transfer arm 2024 can be accommodated in the moving chamber 2003 together with the wafer W to properly maintain the atmosphere. Specifically, according to the configuration of the above-mentioned eighth embodiment, as shown in FIG. 28 , it may be configured as a modified substrate conveying device 2702 . In this modification, the moving chamber 2703 is configured so that only the vicinity of the tip end of the conveyance arm 2024 can be accommodated, and together with the conveyance arm 2024, the support 2526 can be rotated as an axis. According to this configuration, by changing the direction of the moving chamber 2703 in accordance with the transfer of the wafer W by the transfer arm 2024, the wafer W can be transferred between the FOUP 2062 and the load lock chamber 2081 with little exposure to the outside air. . Similarly, it may be configured such that the moving chamber 2703 is moved in response to the movement of the conveyance arm 2024 . In these cases, the size of the moving chamber 2703 can be further reduced compared to the above-described embodiment, and the amount of gas used can be further reduced.

In addition, on the premise that the opening and closing doors 2136A, 2136B, 2137, and 2236 for closing the openings 2031a, 2033a, 2231a, and 2233a described in the fourth embodiment or the fifth embodiment are provided, the wall of the moving chamber 2003 can be closed. When the 2031 and 2033 are directly connected to the loading port 2061, or when the structure is provided with a sealing member that closes the gap between the two, the interior of the moving chamber 2003 and the FOUP 2062 can be separated without being exposed to the outside air. Internal connectivity. In the case of such a configuration, the frame body 2051 is unnecessary, and the manufacturing cost can be further reduced.

In the third to ninth embodiments described above, the wafer W is used as the substrate, but the present invention can be applied to substrate transfer apparatuses that target various precision-processed products such as glass substrates.

Further, the transfer arm 2024 is not limited to the above-mentioned link-type arm robot and the SCARA-type multi-joint robot arm, and various types may be used.

Other configurations can be variously modified without departing from the scope of the present invention.

&lt;10th embodiment&gt;

In the tenth to fourteenth embodiments, the object is to provide a substrate conveying apparatus and an EFEM equipped with the same, which can suppress the transfer to the substrate being conveyed by using means different from the first to ninth embodiments. The adhesion of moisture makes the surface properties of the substrate suitable.

The substrate transfer apparatus to which the EFEM of the tenth embodiment is applied is configured as a wafer transfer apparatus 3002 that transfers a wafer W as a substrate, and is one of the constituent elements of the EFEM 3001 shown in FIG. 29 . The EFEM 3001 is composed of the main body 3011, which is the part of the mechanical device, and the controller 3009 for controlling the operation. The main body 3011 has the above-mentioned wafer transfer device 3002 inside, and can use this to transfer wafers between predetermined transfer positions. Circle W to carry. In addition, a frame body 3051 is provided so as to surround the wafer transfer device 3002, and the frame body 3051 is provided with frame walls 3051a to 3051d and a ceiling wall (not shown) that constitute wall surfaces that surround the wafer transfer device 3002 in four directions. , a wafer transfer chamber 3005 that forms a substantially closed space is internally constituted. Further, a plurality of (three in the figure) loading ports 3061 to 3061 are provided adjacent to the outer side of one frame body wall 3051a, and the wafer transfer chamber 3005 described above and the wafer transfer apparatus provided in the inside thereof are provided by these and the above-mentioned wafer transfer chamber 3005. 3002, the body 3011 constituting the EFEM3001.

In addition, the state in which the FOUP 3062 is mounted on the load port 3061 is shown in the figure. Each load port 3061 is provided with a door 3061a, and the door 3061a moves together by being connected with a cover portion 3062a provided in the FOUP 3062, and the FOUP 3062 is opened to the wafer transfer chamber 3005. In the FOUP 3062, the mounting portions 3062b and 3062b for supporting one wafer W in pairs are provided in a plurality of vertical directions, and a plurality of wafers W can be accommodated by using these. In addition, the FOUP 3062 is usually filled with nitrogen gas, and the atmosphere in the FOUP 3062 may be replaced with nitrogen through the loading port 3061 .

And it becomes a load lock chamber 3081 which can be connected to the outer side of the frame wall 3051c facing the load port 3061 and constitutes a part of the processing apparatus 3008. By opening the door 3081a of the load lock chamber 3081, it becomes possible to store the wafers. A state in which the transfer chamber 3005 and the load lock chamber 3081 communicate with each other. Although various types of processing apparatuses 3008 can be used, generally, transfer chambers 3082 are provided adjacent to the load lock chamber 3081, and a plurality of transfer chambers 3082 (three in the figure) are further provided adjacent to the transfer chambers 3082. The composition of the processing unit 3083. Doors 3082a and 3083a to 3083a are provided between the transfer room 3082, the load lock room 3081, and the processing units 3083 to 3083, respectively. By opening these, the rooms can communicate with each other, and the transfer room 3082 can be used. The transfer robot 3082b inside moves the wafer W between the load lock chamber 3081 and the processing units 3083-3083.

The wafer transfer apparatus 3002 is roughly composed of a guide rail 3021 constituting a predetermined rail, a movable table 3022 as a base that is made movable along the guide rail 3021, and a transfer arm 3024 provided on the movable table 3022, and the heating means 3003 forming part of the features of the present invention.

Fig. 30 is an enlarged plan view showing the vicinity of the transfer arm 3024 of the wafer transfer apparatus 3002, Fig. 30(a) is a state in which the transfer arm 3024 is extended, and Fig. 30(b) is a state where the transfer arm 3024 is extended shortened state. In addition, Fig. 31(a) is a front view showing the situation as seen from the extending direction of the guide rail 3021, and Fig. 31(b) is a situation seen from the direction perpendicular to the guide rail 3021. side view. Below, the detailed structure of the wafer transfer apparatus 3002 is demonstrated using these 30th and 31st FIG.

First, the guide rail 3021 is arranged on the floor F in the housing 3051 (see FIG. 29 ), and the movable table 3022 as a base formed in a rectangular plate shape is supported on the guide rail 3021 . The guide rails 3021 are linearly arranged so as to be parallel to the casing walls 3051a and 3051c (see Fig. 29 ) to form a linear rail, and the movable table 3022 can follow the guide rails by driving means not shown. 3021 was moved.

A base 3023 having a substantially cylindrical shape is provided on the upper surface of the movable table 3022 , and the conveying arm 3024 is supported on the upper portion of the base 3023 . The transfer arm 3024 can have various structures that are generally known. For example, it can be optimally used: a SCARA type horizontal multi-joint robot arm, a multi-stage sliding type arm robot arm, and a link type arm robot arm, etc. . In this embodiment, the conveying arm 3024 is a link-type arm manipulator composed of a plurality of arm elements 3024a to 3024d and a fork 3025 constituting a link.

Specifically, the base ends of the arm elements 3024a and 3024b are rotatably supported on the base 3023, respectively, and the base ends of the arm elements 3024c and 3024d are rotatably supported by the distal ends of the arm elements 3024a and 3024b, respectively. In addition, the distal ends of the arm elements 3024c and 3024d are both connected to the proximal ends of the forks 3025 . The arm elements 3024a to 3024d are respectively rotatable in the horizontal plane, and the fork 3025 can be moved by being connected and cooperating with each other. With this configuration, the arm elements 3024a and 3024b are rotated by the actuators (not shown) incorporated in the base 3023, so that the fork 3025 can be moved linearly (see Fig. 30(b)).

The above-mentioned fork 3025 is formed of a plate-like member having a U-shaped tip in a plan view, and the wafer W can be placed thereon. In addition, the conveyance arm 3024 can be rotated horizontally on the movable table 3022, and the fork 3025 can be oriented in either direction of the housing walls 3051a and 3051c (refer to FIG. 29).

With the above-described configuration, the wafer transfer apparatus 3002 can place the wafer W placed on the fork 3025 constituting the transfer arm 3024 in a direction parallel to the frame walls 3051a and 3051c (see FIG. 29). 2-axis movement in the horizontal and vertical intersecting directions. Further, the susceptor 3023 can also be moved up and down, and by combining this operation, the wafer W is lifted by the fork 3025, and the wafer W on the fork 3025 can also be transferred to a predetermined transfer position. In the EFEM 3001 in this embodiment, the plurality of load ports 3061 on which the FOUP 3062 is provided and the load lock chambers 3081 (refer to FIG. 29 ) facing them are set as transfer positions for transferring the wafers W, and here During this time, the wafer W can be moved using the wafer transfer device 3002 .

Furthermore, on the movable table 3022, the heating means 3003 is provided on the side of the conveyance arm 3024. The heating means 3003 is composed of a rectangular support table 3031 provided on the movable table 3022 on the back side of the base 3023, a support arm 32 protruding above the support table 3031, and a support arm 3032. The heater 3033 at the upper end is constituted.

The support arm 3032 is arranged close to the conveyance arm 3024 in a range where the movement of the conveyance arm 3024 is unobstructed, and the upper part of the support arm 3032 is formed into a curved shape in a substantially "" shape toward the upper side of the conveyance arm 3024, The heater 3033 and the transfer arm 3024 and the wafer W supported by it can be almost opposed to each other. The heater 3033 is arranged in the direction shown in FIG. 31(a), and the direction in which the fork 3025 is moved by the extension of the conveying arm 3024 is a shape extending in a direction perpendicular to the guide rail 3021, and the conveying arm 3021 is extended. When the 3024 is shortened and the fork 3025 is positioned on the base 3023, almost the entire conveyance arm 3024 can be heated. If the bending angle of the support arm 3032 can be changed, it is preferable to adjust the heating amount easily.

Specifically, the heater 3033A shown in FIG. 37(a) is used as the heater 3033 in this embodiment. This is because one heating bulb 3033b formed in a substantially cylindrical shape is installed in the heater main body 3033a formed in a cube shape along the extending direction of the heater main body 3033a, and current is supplied through the heating control unit 3094 described later. As for the heat generation, the wafer W can be heated mainly by radiant heat.

In addition, the heater 3033B shown in FIG. 37(b) and the heater 3033C shown in FIG. 37(c) may be used. The heater 3033B is formed by juxtaposing a plurality of small heating bulbs 3033c forming a bulb shape in the interior of the heater main body 3033a along the extending direction thereof. In addition, the heater 3033C is configured by arranging the heating wire 3033d in a spiral shape along the extending direction of the heater main body 3033a. Using the heaters 3033B and 3033C having these structures, as with the above-described heater 3033A, the wafer W can be heated by flowing an electric current to generate heat. Furthermore, by providing a reflector or the like inside the heater main body 3033a, it is also preferable that efficiency can be achieved by only heating the object in a specific direction while preventing the spread of heat.

The EFEM 3001 includes a controller 3009 shown in FIG. 29 in order to control the main body 3011 of the EFEM 3001 including the above-described wafer transfer apparatus 3002 . The controller 3009 is composed of a general microprocessor having a CPU, a memory, and an interface, and stores programs necessary for processing in the memory in advance. A person who cooperates with hard resources to realize the desired function.

The controller 3009 is configured to include a movable table position control unit 3091 , an arm position control unit 3092 , a lift position control unit 3093 , and a heating control unit 3094 .

The movable table position control unit 3091 moves the moving chamber 3003 along the guide rail 3021 by giving a drive command to a drive means (not shown), and can be stopped at an arbitrary position. The arm position control unit 3092 can perform: changing the direction of the conveying arm 3024, and extending and extending to an arbitrary length by applying a drive command to an actuator (not shown) provided in the base 3023. Shortened action. The elevating position control unit 3093 can position the conveying arm 3024 at an arbitrary height position by applying a drive command to an actuator (not shown) for elevating and lowering incorporated in the base 3023 to perform an elevating operation. The heating control unit 3094 energizes the heater 3033 constituting the heating means 3003, and controls its current or voltage, except for the heating by the heater 3033 and the stop of the heating, which can be changed per unit time. amount of heat.

By operating the wafer transfer apparatus 3002 configured as described above under the control of the controller 3009, the wafer W can be transferred as follows. Here, as one example, the case where the wafer W is transferred to the load lock chamber 3081 from the FOUP 3062 connected to the load port 3061, which is one of the delivery positions, will be described.

First, as shown in FIG. 32, the wafer transfer apparatus 3002 moves the movable table 3022 according to the drive command from the movable table position control unit 3091, and moves the transfer arm 3024 relative to the FOUP 3062 that accommodates the wafer W, which is a transfer object. Load port 3061 for mounting.

Next, according to the command from the controller 3009, the door 3061a of the load port 3061 and the cover 3062a of the FOUP 3062 are opened, and the fork 3025 at the tip of the transfer arm 3024 is positioned by the lift position control unit 3093 above the transfer object, that is, the wafer. W slightly below. And as shown in FIG. 33, the conveyance arm 3024 is extended by the arm position control part 3092, and the front-end|tip of the conveyance arm 3024 is inserted into the FOUP3062. At this time, the fork 3025 enters with a slight gap between one side and directly below the wafer W. Furthermore, the conveying arm 3024 is raised by the raising/lowering position control unit 3093 to raise the wafer W to be supported by the fork 3025 .

From this state, the conveying arm 3024 is shortened by the arm position control unit 3092, and as shown in FIG. position moves. Since the heater 3033 is configured to extend in the direction in which the wafer W is moved by the conveyance arm 3024 , the heating control unit 3094 controls the heating control section 3094 for the time when the wafer W is pulled out from the FOUP 3062 to the position on the susceptor 3023 . The heater 3033 is energized, and the wafer W can be heated even while the heater 3033 is moving downward, so that the heating time can be more secured. In addition, when the heating of the heater 3033 requires time, the expected heating time may be set so as to appropriately advance the start of energization of the heater 3033 .

After the wafer W is taken out from the FOUP 3062, the door 3061a of the load port 3061 and the lid 3062a of the FOUP 3062 are closed to keep the inside of the FOUP 3062 as clean as possible. Further, in order to supplement the nitrogen flowing out from the inside of the FOUP 3062, it is also preferable to supply a new nitrogen gas into the FOUP 3062 from the loading port 3061 after the lid portion 3062a is closed.

And the heating state by the heater 3033 is continued. As shown in FIG. 35, the movable table 3022 is moved according to the drive command from the movable table position control unit 3091, and the arm position control unit 3092 moves the conveying arm 3024. The orientation is changed so that the carry arm 3024 is opposite the load lock chamber 3081. In addition, the movement of the movable table 3022 and the change of the direction of the conveyance arm 3024 may be performed simultaneously. During the movement of the movable table 3022 and the change of the direction of the conveyance arm 3024, the surface of the wafer W is heated by the heater 3033 to sufficiently increase the temperature of the wafer W to remove the water adhering to the surface. When the heating is sufficiently performed in the middle of the movement, the heating of the wafer W by the heater 3033 may be stopped in the middle, or the current value may be lowered to reduce the heating amount per unit time. Of course, when it is necessary to increase the temperature of the wafer W, or when the heating time is to be secured, the wafer W is moved under the heater 3033 until a predetermined amount of heating is achieved, and the next step is not performed. Action can also. In order to strictly control the temperature of the wafer W, a non-contact temperature sensor is provided at a position facing the wafer W, or a temperature sensor of the contact type is provided in the fork 3025. The controller 3009 may control the output temperature data.

From the above state, as shown in FIG. 36, the door 3081a (refer to FIG. 35) of the load lock chamber 3081 is opened, and the conveyance arm 3024 is extended toward the load lock chamber 3081 according to the driving command from the arm position control unit 3092, The fork 3025 and the wafer W are brought into the load lock chamber 3081 . Further, the transfer arm 3024 is lowered by a command from the lift position control unit 3093 , and the wafer W is transferred from the fork 3025 to a mounting table (not shown) in the load lock chamber 3081 .

As described above, by using the wafer transfer apparatus 3002, the wafer W can be heated by the heater 3033 during the transfer of the wafer W from the FOUP 3062 to the load lock chamber 3081, and the removal of moisture from the surface of the wafer W can be suppressed due to Corrosion and oxidation of the wafer W due to moisture make it possible to properly maintain the surface properties.

Also, when the wafer W is transferred from the load lock chamber 3081 to the FOUP 3062, the above-described operations are reversed, and similarly, the wafer W can be heated during the transfer. In this way, the removal of water and the adhesion of new water can be suppressed, and the surface properties of the wafer W can be appropriately adjusted.

Further, in the processing apparatus 3008 , according to the processing applied to the wafer W, the heater 3033 can be used for pre-processing or post-processing heating processing, so that the surface properties of the wafer W can be appropriately adjusted. Specifically, when the processing temperature of the process in the processing apparatus 3008 is high, by heating the wafer W in advance, the processing time in the processing unit 3083 can be reduced, and the processing speed can be increased. In addition, when corrosive gas, contaminants, etc. adhere to the surface of the wafer W by the processing performed by the processing apparatus 3008, the wafer W may be evaporated or removed from the surface by heating. Furthermore, there are cases in which stabilization of the surface state is achieved by heating by post-processing. By utilizing in this way, the processing time in the processing device 3008 can be shortened, and the installation space of the entire equipment including the processing device can be reduced.

As described above, the wafer transfer apparatus 3002 serving as a substrate transfer apparatus in this embodiment includes a movable table 3022 that is a base movable along the guide rails 3021 constituting a predetermined track, and the movable table 3022 is moved by the movable table 3022 A transfer arm 3024 that indirectly supports and transports the wafer W as a substrate, and a heater 3033 that is supported by the movable table 3022 and arranged in a position opposite to the transfer arm 3024, and the wafer W is transferred by the transfer arm 3024. When the circle W is transported, the heater 3033 can heat the surface of the wafer W.

Because of this configuration, the wafer W held by the transfer arm 3024 can be heated by the heater 3033 while the wafer W is being transferred, so that the moisture adhering to the surface of the wafer W can be removed, and the surface of the wafer W can be suppressed. Changes in traits. In addition, the processing apparatus 3008 at the end of the transfer can be used as a heat treatment performed before and after processing the wafer W, shortening the processing time of the wafer W and reducing the installation space of the processing apparatus 3008.

In addition, since the heater 3033 is configured to extend along the moving direction of the wafer W by the transfer arm 3024, the wafer W can be efficiently heated when the wafer W is transferred.

Further, the above-mentioned wafer transfer device 3002 is provided, and a frame body 3051 covering this is provided. By setting: wall surfaces 3051a and 3051b adjacent to the frame body 3051 as load ports 3061 and 3051b as transfer positions for transferring the wafer W, The EFEM 3001 can be effectively configured by configuring the load lock chamber 3081. According to this EFEM 3001, by using the wafer transfer device 3002 provided in the housing 3051, the surface of the wafer W being transferred is heated, the surface properties are stabilized due to the removal of moisture, and the wafer W is stabilized. When heat treatment is necessary before and after the application treatment, it can be easily performed without adding special equipment.

&lt;11th embodiment&gt;

FIG. 38 is a schematic diagram showing a wafer transfer apparatus 3202 serving as a substrate transfer apparatus according to the eleventh embodiment, and an EFEM 3201 having the same. In this figure, the same reference numerals are attached to the same parts as those of the tenth embodiment, and the description thereof will be omitted.

The EFEM 3201 is composed of a main body 3211 and a controller 3009 that controls this, and the wafer transfer device 3202 constituting the main body 3211 is provided with a transfer arm 3024 and a heating means 3203 . The wafer transfer apparatus 3202 in this embodiment is different from the tenth embodiment in that the attachment structure of the heating means 3203 to the movable table 3222 as a base is different.

The specific structure is shown in Fig. 39 and Fig. 40. Fig. 39 is a plan view showing an enlarged main part, Fig. 40(a) is a front view, and Fig. 40(b) is a side view. As shown above, in the present embodiment, the movable table 3222 is smaller in size than that of the tenth embodiment, and has a substantially square shape in plan view. And, the base 3023 is provided in the center part. Furthermore, from the back side of the base 3023 , the support base 3231 is directly extended in the horizontal direction, and the support arm 3232 is erected from the support base 3231 . The upper portion of the support arm 3232 is formed to be bent in a substantially "" shape toward the upper side of the conveyance arm 3024 so that the upper end thereof can face the wafer W holding the heater 3033 on the conveyance arm 3024 . With this configuration, the heater 3033 is supported by the base 3023 through the support arm 3232 , and is indirectly supported by the movable table 3222 through the base 3023 .

Even in the case of such a configuration, the same effects as those of the tenth embodiment described above can be obtained. Furthermore, by raising and lowering the support arm 3232 along with the raising and lowering motion of the susceptor 3023, the relative positions of the wafer W and the heater 3033 are not changed even if the susceptor 3023 is raised and lowered, and the heating can be performed under the same conditions. The setting of the conditions can be easily performed.

&lt;12th embodiment&gt;

FIGS. 41 and 42 illustrate a wafer transfer apparatus 3302 serving as a substrate transfer apparatus according to the twelfth embodiment, and the EFEM 3301 can be constituted with the same as the tenth and eleventh embodiments. Also, Fig. 41(a) and Fig. 42(a) are plan views showing enlarged main parts, and Fig. 41(b) and Fig. 42(b) are those viewed from the front and are connected with the controller 3309 diagram of the relationship. In these figures, the same reference numerals are attached to the same parts as those of the tenth embodiment and the eleventh embodiment, and the description thereof is omitted.

The EFEM 3301 is composed of a main body 3311 and a controller 3309 that controls this, and the wafer transfer device 3302 constituting the main body 3311 is provided with a transfer arm 3324 and a heating means 3303 . The conveying arm 3324 in this embodiment is a multi-stage sliding arm manipulator in which a plurality of arm elements 3324a to 3324a are sequentially connected, and a fork 3025 is provided at the tip. Each of the arm elements 3324a to 3324a is configured to be slidable with respect to each other, and by applying a drive command from the arm position control unit 3092 to an actuator (not shown in the figure) for driving these, the entire conveyance arm 3324 becomes movable. Extend or shorten. Of course, instead of this conveyance arm 3324, the conveyance arm 3025 (refer to FIG. 30) used in the tenth embodiment may be used.

Compared with the tenth embodiment and the eleventh embodiment, the present embodiment has a main feature in that the shapes of the heaters 3333 constituting the heating means 3303 are different. Moreover, the support structure comprised by the support arm 3232 etc. for supporting the heater 3333 is comprised similarly to 11th Example.

The heater 3333 has a shape extending in the direction in which the fork 3025 is moved by the extension of the conveying arm 3324, that is, the shape extending in the direction perpendicular to the guide rail 3021. The frame wall 3051a on the side of the port 3061. In addition, although omitted in the figure, the other end portion of the heater 3333 extends to a position close to the housing wall 3051c (see FIG. 29 ) on the side of the load lock chamber 3081 .

Therefore, the main body 3333a constituting the heater 3333 is set to be slightly shorter than the distance between the opposing housing walls 3051a and 3051c (see Fig. 29), and three heating bulbs are used as heat generating parts inside the body 3333a. 3233b are arranged side by side in the extending direction. Each heating bulb 3333b generates heat by being supplied with electric current from the heating control unit 3394 constituting the controller 3309 . In addition, the controller 3309 includes a heat generating unit switching unit 3395 for switching the heating bulb 3333b to which the current from the heating control unit 3394 is applied.

With the above-described configuration, as shown in FIG. 42 , the fork 3025 enters into the FOUP 3062 , and the wafer W can be taken out from the FOUP 3062 and then heated by the heater 3333 . Furthermore, with the shortening of the transfer arm 3324 , the heating can be continued even while the wafer W is being moved, so that the time for water to adhere to the wafer W can be reduced, and heating can be performed efficiently. Furthermore, since the heater 3333 also extends toward the load lock chamber 3081 (see FIG. 29 ) side, the heating can be continued until the wafer W is placed in the load lock chamber 3081 . These points are that the wafers are taken out from the load lock chamber 3081 side, and the same applies to the case where the wafers are accommodated in the FOUP 3062 . In this way, the time required to transfer the wafer W between the FOUP 3062 and the load lock chamber 3081 can be almost performed because the heating of the wafer W can be performed. When it is necessary to ensure a sufficient heating time, the unnecessary time can be saved and the time can be achieved. shortening.

In addition, when the wafer W is transferred between the FOUP 3062 and the load lock chamber 3081, since the heat generation switching unit 3395 switches the heating lamps 3333b to 3333b to which the current is applied in response to the operation of the transfer arm 3324, it is also possible to perform proper wafer crystallization. The heating of the circle W reduces the energy consumption.

Even in the case of the above-described configuration, the same functions and effects as those of the tenth embodiment and the eleventh embodiment described above can be obtained.

In particular, since the heater 3333 is configured to extend longer along the moving direction of the wafer W by the transfer arm 3324, the wafer W can be heated more efficiently when the wafer W is transferred. .

Further, the wafer transfer device 3302 serving as the substrate transfer device in this embodiment is constituted by heating bulbs 3333b to 3333b serving as a plurality of heat generating parts that generate heat when the heater 3333 is energized, because the correspondence is performed by the transfer arm 3324. The heating bulb 3333b that is energized can be switched by the movement of the wafer W, so that the wafer W can be efficiently heated while saving energy.

&lt;The thirteenth embodiment&gt;

FIG. 43 shows a wafer transfer apparatus 3402 serving as a substrate transfer apparatus according to the thirteenth embodiment, and the EFEM 3401 can be configured similarly to the tenth to twelfth embodiments on this basis. In addition, FIG. 43( a ) is a diagram showing a state seen from the front and showing the relationship with the controller 3409 , and FIG. 43( b ) is a side view. In these figures, the same reference numerals are attached to the same parts as those of the tenth to twelfth embodiments, and descriptions thereof are omitted.

The EFEM 3401 is composed of a main body 3411 and a controller 3409 that controls this, and the wafer transfer device 3402 constituting the main body 3411 is provided with a transfer arm 3024 and a heating means 3403 . The wafer transfer apparatus 3402 in this embodiment is different from the tenth embodiment in that the mounting structure of the heating means 3403 on the movable table 3022 is different.

Specifically, a support stand 3031 is provided on the movable stand 3022, the support stand 3031 stands up from the support stand 3432, and the pivot mechanism 3434 is inclined at a predetermined angle on the upper portion thereof. The support arm 3435 is provided so as to protrude from the rotation mechanism 3434, and the support arm 3435 can be rotated around its central axis. Furthermore, the heater 3033 is supported by the tip of the support arm 3435 . The support column 3432, the rotation mechanism 3434 and the support arm 3435 are substantially curved in a "" shape in side view, and are configured to face the heater 3033 and the wafer W held by the fork 3025 at the tip of the transfer arm 3024.

The rotation mechanism 3434 incorporates an actuator (not shown), and can change the rotation angle of the support arm 3435 in response to a drive command from the heater rotation control unit 496 constituting the controller 3409, as indicated by the arrow in the figure. The direction of the heater 3033 can be changed.

Therefore, by changing the direction of the heater 3033 in conjunction with the movement of the wafer W by the transfer arm 3024, and by orienting the heater 3033 in the direction of the wafer W, the wafer can be secured even when a small heater 3033 is used. W heating time.

Even in the case of the above-described configuration, the same functions and effects as those of the tenth embodiment and the eleventh embodiment described above can be obtained.

Furthermore, in the wafer transfer device 3402 serving as the substrate transfer device in the present embodiment, the heater 3033 can change the direction according to the movement of the wafer W by the transfer arm 3024. Therefore, when the wafer W is transferred, The wafer W can be heated more efficiently.

&lt;14th embodiment&gt;

FIGS. 44 and 45 illustrate a wafer transfer apparatus 3502 as a substrate transfer apparatus according to the fourteenth embodiment, and the EFEM 3501 can be configured similarly to the tenth to thirteenth embodiments on this basis. Moreover, FIG. 44 is a figure which shows the state seen from a plane, and shows the relationship with the controller 3509, FIG. 45 (a) is a front view, and FIG. 45 (b) is a side view. In these figures, the same reference numerals are attached to the same parts as those of the tenth to thirteenth embodiments, and the description thereof is omitted.

The EFEM 3501 is composed of a main body 3511 and a controller 3509 that controls this, and the wafer transfer apparatus 3502 constituting the main body 3511 is provided with a transfer arm 3024 and a heating means 3503 . The wafer transfer apparatus 3502 in this embodiment is different from the tenth embodiment in that the configuration of the heating means 3503 is different.

Specifically, a support table 3531 is provided on the movable table 3022, the support arm 3532 is raised from the support table 3531, and the heater 3033 is supported on the upper part thereof. The support arm 3532 is curved in a substantially "" shape in side view, and is configured to face the heater 3033 and the wafer W held by the fork 3025 at the tip of the transfer arm 3024.

Further, on the support base 3531, a support arm 3536 is provided, and at the tip of the support arm 3536, a blower fan 3537 is provided as a blower means. The blower fan 3537 is formed in an oval shape having almost the same overall length as the heater 3033 , the longitudinal direction is the direction that matches the extending direction of the heater 3033 , and the heater 3033 can be held so as to face the conveyance arm 3024 . In this way, it is possible to blow air toward the wafer W supported by the transfer arm 3024 from the back of the heater 3033 .

In addition to the heating by the heater 3033, the blower fan 3537 blows air toward the wafer W to increase the effect of removing moisture from the wafer W, and by making the atmosphere around the wafer W uniform, the wafer W is The heating efficiency of the circle W may be improved, and the temperature of the surface of the wafer W may be made uniform.

In addition, the blower fan 3537 can supply gas toward the wafer W by being connected to a gas supply source provided outside. This gas is used to improve the moisture removal effect by using dry nitrogen gas, and can remove the residual gas generated by the processing device 3008, so that the surface properties of the wafer W can be maintained more appropriately. Of course, the gas to be supplied may be changed according to the processing steps.

The blower fan 3537 is controlled in accordance with the operation command from the blower control unit 3597 constituting the controller 3509, and the blower control unit 3597 enables the control of the air volume and the supply of air from the outside in addition to the start and stop of the operation. on-off control. In addition, the controller 3509 includes a time control unit 3598 for controlling the operation timing of the heater 3033 by the heating control unit 3094 and the operation timing of the ventilation fan 3537 by the ventilation control unit 3597 . The time control unit 3598 is operated internally by the heating control unit 3094 and the air supply control unit 3597 to perform heating of the wafer W, air supply to the wafer W, and gas supply at a predetermined time based on the memorized time data. Order. The heating control unit 3094 and the air blowing control unit 3597 can perform such interlocking control by starting or stopping the control, or changing the content of the control in accordance with the operation command given to each.

By performing the interlocking control in this way, it is possible to perform heating and air supply to the wafer W at a timing suitable for the content of processing in the wafer W and the processing apparatus 3008 (refer to FIG. 29 ), thereby making it possible to perform gas supply. The surface properties of the wafer W are maintained more appropriately. Furthermore, since it can also be used as a pre-processing or a post-processing corresponding to a processing step, the efficiency of processing can also be achieved.

Even in the case of the above-described configuration, the same functions and effects as those of the tenth embodiment and the eleventh embodiment described above can be obtained.

Furthermore, the wafer transfer device 3502 serving as the substrate transfer device in the present embodiment is configured to hold the heater 3033 and install the blower fan 3537 as the blower means at the position facing the transfer arm 3024. Therefore, it is also possible to The efficiency of heating the wafer W can be improved, and the atmosphere and temperature around the wafer W can be uniformized.

In addition, the blower fan 3537 can supply the gas obtained from the gas supply source toward the transfer arm 3024. Therefore, by supplying a suitable gas to the surface of the wafer W, the heating by the heater 3033 can complement the heating by the heater 3033. The surface properties of the circle W are more suitable.

In addition, since the heater 3033 and the time control unit 3598 for controlling the operation timing of the blower fan 3537 are provided, the heating by the heater 3033 and the supply of the gas generated by the blower fan 3537 are provided. By performing at a suitable timing, it is possible to achieve more suitable surface properties of the wafer W while saving energy.

In addition, the specific structure of each part is not limited only to the above-mentioned Example.

For example, in the tenth to fourteenth embodiments described above, the wafer W is transported between the FOUP 3062 provided on the load port 3061 and the load lock chamber 3081, but the transfer between the FOUPs 3062 and 3062 may be used. situation etc.

Further, in the tenth to fourteenth embodiments described above, the guide rails 3021 constituting the predetermined tracks are formed in a linear shape, and the movable table 3022 also moves linearly along with this. However, the shape of the guide rails 3021 is not limited to this, and a plurality of straight lines and For the curved combination, the movable table 3022 may be moved in the other direction. Furthermore, if the guide rails 3021 are arranged to extend in the up-down direction, the movable table 3022 may be moved in the up-down direction. The movement direction of the movable table 3022 is not limited to the guide rail 3021 if it is possible to restrict the movement direction, and the rail may be constituted by other means such as guide rollers and pull wires.

In addition, according to the wafer transfer apparatus 3402 in the thirteenth embodiment, instead of changing the direction of the heater 3033 with the movement of the wafer W, the heater 3033 can be moved while the state facing the wafer W is maintained. Also can. Furthermore, if the heater 3033 is configured so that both the change of the direction and the movement can be realized, the same effect as the above can be obtained.

In the fourteenth embodiment described above, nitrogen gas was used as the gas supplied to the wafer W, but various gases such as air and oxygen may be used for the processing. Furthermore, clean air with a higher degree of purity than that in the wafer transfer chamber 3005 may be used.

Furthermore, in the tenth to fourteenth embodiments described above, the heaters 3033 and 3333 are configured to heat the object by means of a heating bulb and a heating wire. Various heat sources other than the above may be used, and in this case, the above-mentioned effects can be obtained.

Furthermore, in the tenth to fourteenth embodiments described above, it is assumed that a wafer W is used as a substrate, but the present invention can be used in substrate transfer apparatuses that target various precision-processed products such as glass substrates.

Other configurations can be variously modified without departing from the scope of the present invention.