A semiconductor wafer leveling device and method thereof

Leveling device and method for semiconductor blank

A SEMICONDUCTOR WAFER LEVELING DEVICE AND METHOD THEREOF

The present invention relates to a semiconductor blank leveling device and a method thereof, in particular to a semiconductor blank leveling device and method used on an optical detection device and performing dust removal at the same time during detection.

Automated Optical Inspection (AOI) generally refers to the technology that uses machine vision as the inspection standard. Compared with the conventional human eye inspection, it has the advantages of high speed and high precision. The application level can cover the research and development of high-tech industries, manufacturing quality control, as well as national defense, people's livelihood, medical treatment, environmental protection, electric power... or other related fields.

In the field of automatic optical inspection, a common method for wafer inspection is to mount the wafer on a carrier, and provide negative pressure to the carrier by means of vacuuming. The pores adsorb the wafer on the stage. However, after the wafer is held by the air holes, the edge of the material often warps, resulting in the distortion of the material image taken during image detection; in addition, when the wafer is in a wrinkled state , The use of a vacuum suction stage to provide back pressure to flatten the wafer may cause damage to the wafer, which will reduce the yield of the wafer.

In addition, during the optical inspection, the vacuum leveling device on the surface The foreign dust is also easy to be confused with the defects of the semiconductor material. Therefore, it is necessary to improve the above-mentioned problems to increase the accuracy of detection.

The purpose of the present invention is to solve the problem that the surface of the semiconductor material may still be wrinkled and warped when the semiconductor material is sucked by the vacuum leveling device in the prior art.

To achieve the above objective, the present invention provides a leveling device for semiconductor blanks, which is used in optical inspection equipment to level a semiconductor blank. The leveling device includes a vacuum adsorption stage, one or more gas positive pressure providers, and a controller. The vacuum adsorption stage is used to set a semiconductor material sheet, and has a plurality of vacuum adsorption regions that can be opened and closed independently. The positive gas pressure provider is arranged on one side of the vacuum adsorption platform and moves relative to the plurality of vacuum adsorption regions to provide positive pressure to the semiconductor material on the vacuum adsorption platform. The controller is coupled to the vacuum adsorption stage and the positive gas pressure provider, and the controller correspondingly activates the vacuum adsorption area at the position to adsorb according to the positions of the vacuum adsorption stage and the positive gas pressure provider And level the semiconductor blank.

Further, the semiconductor material is a wafer, a panel, or a substrate.

Further, one side of the positive gas pressure provider is provided with a dust hood.

Further, the gas outlet of the positive gas pressure provider is arranged on both sides or the peripheral side of the dust suction hood, and the gas inlet of the dust suction hood is arranged on the Between the two gas outlets of the positive gas pressure provider.

Furthermore, the leveling device for the semiconductor material sheet further includes an image capturing device arranged on one side of the vacuum suction stage for capturing an image of the semiconductor material sheet.

Further, the positive gas pressure provider is directly aligned to the activated vacuum adsorption area.

Another object of the present invention is to provide a method for leveling a semiconductor wafer, including: providing one or more positive gas pressure providers, and the positive pressure Semiconductor material; providing a vacuum adsorption stage with a plurality of vacuum adsorption areas for adsorbing the semiconductor material; the positive gas pressure provider relative to the vacuum adsorption stage moves between the plurality of vacuum adsorption areas, and according to In order to provide positive pressure to the vacuum adsorption area, use gas pressure to level the semiconductor wafer; and when the gas pressure is provided to the semiconductor wafer, activate the vacuum adsorption area at the corresponding position to pass through the back side of the semiconductor wafer Adsorb the semiconductor wafer, and sequentially open the vacuum adsorption area at the corresponding position as the positive gas pressure provider moves to separately adsorb and level the semiconductor wafer from one side to the other side of the semiconductor wafer .

Further, a dust suction hood is provided until the positive gas pressure provider absorbs the foreign dust that is blown up.

Further, the surface of the semiconductor material piece is photographed by an imaging device to detect the surface of the semiconductor material piece.

Further, the image capturing device is an area scan camera or a line scan camera.

In summary, the present invention uses a non-contact method to level the semiconductor material, which can avoid direct contact and damage to the semiconductor material. In addition, by setting a plurality of vacuum adsorption regions to sequentially adsorb the semiconductor material individually, it is provided under positive gas pressure. When a positive pressure is applied to the semiconductor material by the device, proper expansion space can be reserved to level the warped part of the semiconductor material, avoiding the problem of wrinkles and breakage of the material when the whole surface is adsorbed.

In addition, when a positive pressure is applied to the semiconductor material, the present invention can not only achieve the effect of leveling the surface of the semiconductor material, but also can blow away foreign dust on the surface of the semiconductor material through the provided air knife.

Furthermore, in the present invention, the foreign dust blown away by the air knife can be absorbed and collected by the dust hood provided on one side, so as to prevent the blown foreign dust from falling on the surface of the semiconductor blank again.

<p>100Semiconductor blank leveling device</p><p>10Vacuum suction stage</p><p>A1-A5Vacuum adsorption area</p><p>20Gas Positive Pressure Provider</p><p>30Dust Hood</p><p>40Activity Vehicle</p><p>50Image capture device</p><p>60controller</p><p>70Dust Hood</p><p>PSemiconductor material</p><p>Step S01-Step S06</p>

Fig. 1 is a block diagram of the first embodiment of the present invention.

Figure 2-1 is a schematic diagram of the operation of the first embodiment of the present invention (1).

Figure 2-2 is a schematic diagram (2) of the action of the first embodiment of the present invention.

Figure 2-3 is a schematic diagram of the action of the first embodiment of the present invention (3).

Fig. 3 is a schematic diagram of the appearance of the second embodiment of the present invention.

Fig. 4 is a schematic flow chart of a method for leveling a semiconductor blank of the present invention.

For the detailed description and technical content of the present invention, we will now cooperate with the drawings described as follows.

Please refer to "FIG. 1", which is a block diagram of the first embodiment of the present invention, as shown in the figure: The following is a description of a preferred embodiment of the present invention. This embodiment discloses a semiconductor wafer leveling The device 100 is used in optical inspection equipment for leveling the surface of the semiconductor material to detect the surface of the semiconductor material. The optical detection equipment can be specifically used for materials such as printed circuit board (PCB), flexible printed circuit (FPC), wafer (Wafer), panel (Panel), polarizer, etc. The detection of the workpiece is not limited to the above-mentioned implementation aspects in the present invention. The semiconductor wafer leveling device 100 includes a vacuum suction stage 10, one or more positive gas pressure providers 20, a dust hood 30, a movable carrier 40, an image capturing device 50, and a controller 60.

The vacuum suction stage 10 is used to set the semiconductor material P, and the vacuum suction stage 10 has a plurality of vacuum suction regions A1 to A5 that can be opened and closed independently. Specifically, please refer to "Figure 1" and "Figure 2-1" together. The plurality of vacuum adsorption areas A1-A5 on the vacuum adsorption stage 10 are arranged in sequence in order to provide positive pressure for the gas. In the moving direction of the device 20 (that is, the positive gas pressure provider 20 will sequentially pass through the vacuum adsorption areas A1-A5 while moving), and with the movement of the positive gas pressure provider 20, the vacuum adsorption areas at the corresponding positions will be activated. A1-A5.

In a preferred embodiment, the vacuum suction stage 10 can be a thimble-type vacuum suction stage, and the opening of the pores on the vacuum suction stage 10 can be independently controlled through a plurality of thimble provided on the bottom side of the pores. Closed, through the array method Selectively activate the corresponding vacuum adsorption areas A1-A5; in another preferred embodiment, the thimble can be formed into a group (or integrally formed) in multiples to raise and lower together, thereby avoiding electronic control of individual control of air holes The possible delay caused by the time. In another preferred embodiment, a driven shutter can be used to move the bottom side of the stage to change the position of the vacuum suction area A1-A5; in another preferred embodiment, The pores on the vacuum adsorption stage 10 are divided into a plurality of groups according to the air chambers, and a plurality of vacuuming devices are set to correspond to individual air chambers, and the opening and closing of the vacuuming devices in the corresponding air chambers are controlled to be offset. Or change the effect of vacuum suction area A1-A5. There are many ways to change the vacuum suction areas A1 to A5 of the vacuum suction stage 10, and the present invention is not intended to be limited to the above-mentioned embodiments.

In a preferred embodiment, when the semiconductor wafer P is leveled, the vacuum adsorption areas A1 to A5 can sequentially open the adsorption areas. In another preferred embodiment, the plurality of vacuum adsorption areas A1 to A5 can be freely selected according to the instructions of the computer or the controller 60 to open and close the areas.

The positive gas pressure provider 20 is arranged on one side of the vacuum suction stage 10 to provide positive pressure to the semiconductor material P on the vacuum suction stage 10. Specifically, the positive gas pressure provider 20 supplies high-speed, high-pressure gas to the surface of the semiconductor material P in a non-contact manner, thereby leveling the semiconductor material P. Among them, the gas positive pressure provider 20 series can be a standard air knife, a small air knife, a general-purpose stainless steel air knife, a precision stainless steel air knife, a strong wind type air knife, a curved air knife, a chip suction air knife, and an arc shape. Combinations of air knives, ring air knives, hot air knives, small hot air knives, diamond hot air knives, loop type hot air knives, corrosion-resistant air knives, ion air knives, etc., are not limited in the present invention. In this example The angle between the gas outlet of the positive gas pressure provider 20 and the suction surface of the vacuum suction stage 10 is 90 degrees, which can level the semiconductor material P more effectively and can also level the material at the same time. Blow away foreign dust. Of course, the present invention is not limited to this, and the angle between the gas outlet of the positive gas pressure provider 20 and the suction surface of the vacuum suction stage 10 also falls within a range of 60-120 degrees.

The dust hood 30 is arranged on the side of the positive gas pressure provider 20 or is co-assembled with the positive gas pressure provider 20, which is not limited in this creation. The dust hood 30 is used to absorb foreign dust on the surface of the semiconductor material P. Specifically, the dust hood 30 provides a large area of negative gas pressure to the surface of the semiconductor material P to increase the gas flow area to ensure that the suction is blown up The dust.

The movable carrier 40 is used to be arranged on the side of the positive gas pressure provider 20 or the vacuum adsorption stage 10 to carry the positive gas pressure provider 20 or the vacuum adsorption stage 10 for the gas The positive pressure provider 20 moves relative to the plurality of vacuum suction areas A1 to A5 on the vacuum suction stage 10.

In this embodiment, as shown in "Figure 2-1", "Figure 2-2" and "Figure 2-3", the movable carrier 40 carries and drives the relatively stationary gas of the vacuum adsorption stage 10 The positive pressure provider 20 and the dust hood 30 move. In another preferred embodiment, the movable carrier can be used to carry the positive gas pressure provider and the dust hood, so that the positive gas pressure provider and the dust hood move relative to the fixed vacuum adsorption stage. In the present invention No restrictions.

The image capturing device 50 is used to capture an image of the semiconductor material P, and obtain defects of the semiconductor material P through image processing. The imaging device 50 can be a face scan Area Scan Camera or Line Scan Camera is not limited in the present invention. In the implementation of the area scan camera, the image capturing device 50 can perform shooting according to the leveling progress, or after the entire semiconductor material P is leveled and dust removed, which is not limited in the present invention. In the implementation of the line scan camera, the image capturing device 50 can move with the position of the positive gas pressure provider 20 to capture the image of the semiconductor wafer P while removing dust and leveling, or on the entire semiconductor wafer P Shooting after the leveling and dust removal is completed is not limited in the present invention.

The controller 60 is connected to the vacuum suction stage 10 and the movable carrier 40, and according to the positive pressure provided by the positive gas pressure provider 20 to the position of the semiconductor wafer P, the corresponding vacuum is activated in different regions. The adsorption areas A1-A5 adsorb and level the semiconductor web P. Specifically, the controller 60 can determine the relative position of the positive gas pressure provider 20 and the vacuum suction stage 10 through the position of the movable carrier 40 to determine to activate one of the vacuum suction regions A1-A5.

For example, in this embodiment, five vacuum suction areas A1-A5 are set, and the controller 60 records the individual values returned when the movable carrier 40 moves above the corresponding vacuum suction areas A1-A5, and stores the values in The system is used as an index; when the device is actually operating, compare the value returned by the active vehicle 40 with the pre-stored index, and activate one of the vacuum adsorption corresponding to the position when it matches Area (A1-A5). In another preferred embodiment, the gas positive pressure provider 20 (or activity) can be detected through a sensor (such as a light sensor, an ultrasonic distance measuring device, a resistance ruler, an optical ruler, etc., not shown). According to the position of the carrier 40), the corresponding vacuum suction area (A1-A5) is activated according to the obtained position, so as to achieve the effect of sub-area suction. Yet another In a preferred embodiment, the operation of the device can also be controlled manually, and the process of the system recording operation is further stored in the system for repeated execution. The present invention is not intended to be limited to the above-mentioned embodiment.

The following is a schematic diagram of the control flow of the present invention. In this embodiment, the vacuum adsorption stage 10 includes five vacuum adsorption areas A1-A5, and the gas positive pressure provider 20 is relatively composed of the vacuum adsorption area. A1 moves to the vacuum suction area A5, please refer to "Figure 2-1" to "Figure 2-3" together, as shown in the figure: In this embodiment, the semiconductor blank P has a total of two warps, as shown in figure Shown in 2-1. At the beginning, the positive gas pressure provider 20 is activated and moves toward the semiconductor wafer P. When the positive gas pressure provider 20 moves above the vacuum adsorption area A1 (or moves close to above the vacuum adsorption area A1), The vacuum suction area A1 on the vacuum suction stage 10 is activated, and a negative pressure is provided to the warped part to suck and level the warped part. While blowing and leveling the dust, the dust hood 30 arranged on the side of the positive gas pressure provider 20 absorbs the blown up foreign dust to prevent the blown up foreign dust from falling back to the semiconductor material P surface.

For continuation, please refer to Figure 2-2. Although the warped part of the front end has been leveled, the semiconductor material P may still be wrinkled in the warped rear end area (maybe because the front end is flattened and stretched backwards to produce wrinkles. Fold), when the positive gas pressure provider 20 moves to the vacuum suction area A2, the vacuum suction area A2 on the vacuum suction stage 10 is activated, and provides negative pressure to the wrinkled part to absorb and flatten the wrinkled Part; Based on the same situation as described above, the positive gas pressure provider 20 moves to the vacuum adsorption area A3, the vacuum adsorption area A4 to the vacuum adsorption area A5.

Finally, as shown in Figure 2-3, when the positive gas pressure provider 20 moves to the vacuum adsorption area A5, since the opened vacuum adsorption areas A1-A4 are not closed after opening, all the vacuum adsorption areas A1 at this time -A5 are all activated at the same time to adsorb the semiconductor blank P on the entire surface. At this time, the entire surface of the semiconductor material P is absorbed and leveled and the dust is removed. The imaging device 50 can directly photograph the semiconductor material P after dust removal and leveling to obtain a clean image. In the implementation of the linear camera, the image capturing device 50 can move with the positive gas pressure provider 20, and the surface image of the semiconductor wafer P is scanned by the linear camera while the semiconductor wafer P is flattened, by This completes the test.

In addition to the foregoing implementation aspects, the sub-regional adsorption may also include the following working modes. (1) With the movement of the gas positive pressure provider 20, the vacuum adsorption areas A1-A5 are sequentially opened. When the next vacuum adsorption area is activated (for example, the vacuum adsorption area A3), the previous vacuum adsorption area (for example, the vacuum adsorption area A1- A2) Keep the start state and not shut down. (2) With the movement of the gas positive pressure provider 20, the vacuum adsorption areas A1-A5 are sequentially opened. When the next vacuum adsorption area starts (for example, the vacuum adsorption area A2), only the previous vacuum adsorption area (for example, the vacuum adsorption area A1) ) The system still starts and does not close.

The following is a description of one of the preferred embodiments of the present invention. The positive gas pressure provider 20 of the present invention can be implemented as a single component together with the dust hood 30, thereby increasing the dust collection rate. Please refer to "Figure 3", which is a schematic diagram of the appearance of a preferred embodiment of the present invention. The positive gas pressure provider 20 is integrated on the inner side. Implemented in this In an example, the gas outlets of the positive gas pressure provider 20 are provided in pairs on both sides of the dust hood 70. Of course, the present invention is not limited to this, and the gas outlets of the positive gas pressure provider 20 may also be provided On the peripheral side of the dust suction hood 70. The gas inlet of the dust suction hood 30 is set between the gas outlets of the two positive gas pressure providers 20 in the dust hood 70. When the air knife is applied to the surface of the semiconductor blank P from both sides at the same time, foreign dust can be avoided Fly out to one side.

In addition to the above-mentioned implementation aspects, the present invention also protects a method for leveling a semiconductor material sheet. Based on the method flow, the semiconductor material sheet P can be effectively leveled and the foreign dust on the surface of the semiconductor material sheet P can be removed at the same time. Please refer to "Figure 4", which is a schematic flow chart of the method for leveling a semiconductor wafer of the present invention, as shown in the figure: The method includes the following steps: a vacuum suction stage 10 is provided to transfer the semiconductor wafer P To a vacuum suction stage 10 to prepare the semiconductor wafer P for testing (step S01).

One or more positive gas pressure providers 20 are provided to the vacuum suction stage 10 so as to be aligned to the vacuum suction stage 10 and provide positive pressure to the surface of the semiconductor wafer P (step S02).

A dust hood 30 is provided to the positive gas pressure provider 20, and when the semiconductor material P is pressed under a positive pressure, the dust hood 30 arranged on the side of the positive gas pressure provider 20 absorbs the surface of the semiconductor material P The foreign dust on the surface (step S03).

Next, the positive gas pressure provider 20 is moved relative to the vacuum adsorption stage 10 between the plurality of vacuum adsorption areas A1-A5, and the positive gas pressure provider 20 is moved from one side of the semiconductor wafer P to the other. On one side, provide positive pressure in sequence to the vacuum suction Gas pressure is used to level the semiconductor wafer on the attached areas A1-A5 (step S04). When a positive pressure is provided, the gas positive pressure provider 20 is directly aligned to the activated vacuum adsorption area A1-A5. During the movement, the vacuum suction area (A1-A5) at the corresponding position is activated while the gas pressure is supplied to the semiconductor wafer P to adsorb the semiconductor wafer P through the back side of the semiconductor wafer P (step S05) . As the positive gas pressure provider 20 moves, the vacuum adsorption regions (A1-A5) at corresponding positions are sequentially opened to separate the regions from one side of the semiconductor wafer P to the other side to individually adsorb and level the semiconductor The blank P (step S06), avoid the movement of the semiconductor blank P caused by the generated airflow.

During the detection process, the image capturing device 50 can photograph the semiconductor blank P at the same time as the dust removal and leveling is completed or when the dust removal and leveling is completed, so as to perform detection on the semiconductor blank P.

In summary, the present invention uses a non-contact method to level the surface of the semiconductor material, which can avoid direct contact with the semiconductor material. In addition, by providing a plurality of vacuum adsorption areas, it can be used when positive pressure is applied to the semiconductor material. Keep proper stretching space to level the warped part of the semiconductor blank. In addition, when a positive pressure is applied to the semiconductor material, the present invention can not only achieve the effect of leveling the surface of the semiconductor material, but also can blow away the foreign dust on the surface of the semiconductor material through the provided air knife, and collect it with a dust hood. The dust that was blown up.

The present invention has been described in detail above, but what is described above is only a preferred embodiment of the present invention, and should not be used to limit the scope of implementation of the present invention, that is, everything made in accordance with the scope of the patent application of the present invention is equal Changes and modifications should still fall within the scope of the patent of the present invention.