Methods and materials for anchoring gapfill metals

Method and material for anchoring gap filling metal

METHODS AND MATERIALS FOR ANCHORING GAPFILL METALS

[Cross Reference]

This application is related to Artur KOLICSs US Patent Application No. 12/334,460 named "ACTIVATION SOLUTION FOR ELECTROLESS PLATING ON DIELECTRIC LAYERS" filed on December 21, 2007, which is incorporated herein in its entirety. for reference.

The present invention relates to the manufacture of electronic devices such as integrated circuits; more specifically, the present invention relates to methods and compositions for improving the adhesion between gap filler metals and dielectrics used in electronic devices.

Electroless deposition is a process frequently used in the manufacture of electronic devices. This process is particularly important for applications such as structures used in damascene and/or dual damascene devices that require the deposition of a metal layer such as gap-filling metal on a substrate including a metal surface area and a dielectric surface area. These processes are also used in applications such as forming electrical connections to metal contacts of integrated circuits. Electroless deposition treatment can be easily performed on specific catalyzed or activated surfaces. The adhesion to the catalyzed or activated surface can be satisfactory. Similarly, the chemical vapor deposition process used to deposit metal on the metal surface can also have satisfactory adhesion. However, the metal deposited by the electroless deposition method and the metal deposited by the chemical vapor deposition method may have poor adhesion to the dielectric surface. Therefore, the deposited metal can only be attached or held by the metal surface area of the substrate. Compared to contact with a dielectric surface, this surface may only provide a small part of the contact surface area, and For subsequent processing, the overall adhesion of the metal to the substrate may be insufficient.

There is a need for methods and materials for improving the adhesion of metals such as gap filler metals to dielectric surfaces for manufacturing various electronic devices.

The present invention relates to electronic devices, and more specifically, to the metallization of electronic devices. The present invention provides one or more improvements in solutions and methods used for manufacturing electronic devices such as semiconductor devices including integrated circuits.

An embodiment of the present invention includes a method of manufacturing an electronic device. According to one embodiment, the method includes: providing a substrate with a dielectric oxide surface area adjacent to a conductive surface area, chemically bonding an anchor compound and the dielectric oxide surface area to form an anchor layer, and using conductive The surface area initiates the growth of the metal, and the metal is grown so that the anchor layer is also bonded to the metal. The anchor compound has at least one functional group capable of forming a chemical bond with the surface of the dielectric oxide, and at least one functional group capable of forming a chemical bond with a metal. Another embodiment of the present invention is an electronic device. The third embodiment of the present invention is a solution containing an anchor compound.

It should be understood that the present invention does not limit its application to the details of the construction and the configuration of the components described in the following description or shown in the drawings. The present invention can be made into other embodiments, and can be implemented and realized in different ways. In addition, it should be understood that the wording and terminology used herein are for the purpose of description and should not be regarded as restrictive.

As far as it is concerned, those familiar with this technology will understand that the concept based on this disclosure can be easily used as a design basis for other structures, methods, and systems for implementing the embodiments of the present invention. Therefore, as long as the structure of the equivalent does not depart from the spirit and scope of the present invention, it is important to regard the claim as including the equivalent.

<p>101Substrate</p><p>102Substrate</p><p>103Substrate</p><p>110Base</p><p>115Dielectric oxide</p><p>120Groove</p><p>130Metal contacts</p><p>135Anchor layer</p><p>140Gap filler metal</p>

Fig. 1 is a cross-sectional side view of a substrate processed according to an embodiment of the present invention.

Figure 2 is a cross-sectional side view of a substrate processed according to an embodiment of the present invention.

Fig. 3 is a cross-sectional side view of a substrate processed according to an embodiment of the present invention.

Those skilled in the art understand that the elements in the drawings are shown for simplicity and clarity, and are not necessarily drawn to scale. For example, the size of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the embodiments of the present invention.

The present invention relates to electronic devices, and more specifically, to the metallization of electronic devices. The present invention attempts to overcome one or more of the problems in manufacturing electronic devices, for example, for manufacturing semiconductor devices using integrated circuits.

For the terms defined below, unless a different definition is proposed in the claim or elsewhere in this specification, these definitions shall apply. Regardless of whether it is explicitly stated or not, all values are defined here as modified by the term "about". The term "about" roughly refers to a number within a range that those skilled in the art would consider to be equal to the stated value for producing substantially the same properties, functions, results, etc. The numerical range indicated by the low value and the high value is defined as including all numbers included in the numerical range and all sub-ranges included in the numerical range. As an illustration, the range 10 to 15 includes, but is not limited to, 10, 10.1, 10.47, 11, 11.75 to 12.2, 12.5, 13 to 13.8, 14, 14.025, and 15.

The term "metal" is used here to mean a metal element in the periodic table of elements and/or a metal alloy containing one or more metal elements mixed with at least one other element; the metal and the metal alloy have elements from the periodic table The general properties of metal elements such as high conductivity.

The term "valency" of metal elements is defined here in accordance with the International Union of Pure and Applied Chemist Compendium of Chemical Terminology, 2nd Edition (1997) as being able to be combined with an atom of the element under consideration, or with a fragment, or in which The maximum number of monovalent atoms of one atom that can be substituted for this element.

The term "anchoring compound" is used here to mean one or more functional groups that form a chemical bond with the oxide surface, and a metal or metal alloy that forms a chemical bond with a metal or metal alloy that has suitable properties for use as a gap filler metal in an electronic device. Molecules or ions of one or more functional groups.

The embodiment of the present invention and the operation of the embodiment will be mainly focused on processing such as Discussed in the background of semiconductor wafers of silicon wafers used in the manufacture of integrated circuits. The following discussion focuses on the use of silicon electronic devices with a metallization layer formed on or in an oxide dielectric structure, such as the metal layer used to make gate contacts. However, it will be understood that the embodiments according to the present invention can be used for other semiconductor devices, various metal layers, and semiconductor wafers other than silicon.

In the description of the following drawings, the same reference numerals are used when designating elements or processes that are substantially the same and that are common to the drawings.

An embodiment of the present invention includes a method of manufacturing an electronic device. Referring now to FIGS. 1, 2, and 3, there are shown cross-sectional side views of a substrate processed by a method according to one or more embodiments of the present invention. According to an embodiment of the present invention, the method includes providing a substrate 101. As shown in FIG. 1, the substrate 101 includes a base 110 and a dielectric oxide 115 on the base 110. The dielectric oxide 115 has one or more through holes and/or one or more grooves 120 formed therein. The one or more through holes and/or one or more recesses 120 expose conductive areas such as the metal contacts 130. The area of the dielectric oxide 115 is adjacent to the conductive area such as the metal contact 130. The metal contacts 130 may be substantially the same as those used for semiconductor circuits. As an option for one or more embodiments of the present invention, the conductive region may be a silicide such as (but not limited to) nickel platinum silicide used in semiconductor circuit contacts.

The method further includes chemically bonding the anchor compound and the dielectric oxide surface area to form the anchor layer 135 as shown in FIG. 2. Generally speaking, the anchor compound has at least one functional group capable of forming a chemical bond with the oxide surface and at least one functional group capable of forming a chemical bond with the gap filler metal. The anchor compound has suitable properties and is applied under the following conditions: the anchor compound substantially only forms a bond with the dielectric oxide to form an anchor layer 135 on the dielectric 115, and substantially no contact with the metal 130 Form a bond. Therefore, the anchor layer 135 is present on the dielectric 115 but not on the metal contact 130. The anchor layer 135 includes a chemical reaction product from the reaction between the dielectric oxide layer 115 and the anchor compound.

The method further includes: using the conductive surface area shown by the metal contact 130 to initiate the growth of the metal, and growing the metal to fill the one or the other with the gap-filling metal 140 More grooves and/or one or more through holes allow the anchor compound to also bond with the metal in contact with the surface area of the dielectric oxide.

In one or more embodiments of the method of manufacturing an electronic device, the gap filler metal 140 is selectively deposited. Optionally, the gap filler metal 140 may be selectively deposited by a process such as electroless deposition, or the gap filler metal 140 may be selectively deposited by a process such as chemical vapor deposition. More specifically, the growth of the gap filler metal starts from a metal contact such as the metal contact 130 at the bottom of the through hole or the bottom of the groove that has been formed in the dielectric 115. The gap-filling metal growth is continued to achieve bottom-up filling of the through holes and/or grooves.

According to one or more embodiments of the present invention, the electroless deposition of the gap filler metal 140 is completed by placing the substrate with the anchor layer 135 in the electroless deposition solution. The electroless deposition solution is formulated to form a layer of metal, alloy, or metal composition. A description of the electroless deposition process applicable to one or more embodiments of the present invention can be found in U.S. Patent No. 6,794,288 by Kolics et al. and U.S. Patent No. 6,911,076 by Kolics et al.; the entire contents of these patents are incorporated herein. For reference.

It should be noted that the graphics in Figure 1, Figure 2, and Figure 3 are not drawn to scale. More specifically, the thickness of the anchor layer 120 is exaggerated for display purposes. Furthermore, the graph in FIG. 3 shows an electronic device 103 having a metal layer 140 as a gap filler metal. Furthermore, the pattern shown in FIG. 3 presents a planarized surface to form a damascene metallization structure.

According to one or more embodiments of the present invention, the method includes using an anchor compound containing an inorganic oxyanion, an amine group, an imine group, a cyano group, or a combination thereof. One or more other embodiments of the present invention use an anchor compound having a functional group that can form a complex with ions of the metal used for gap filling, and/or a functional group that is strongly adsorbed on the gap filling metal. Embodiments of the present invention using cobalt in the gap fill metal include the use of an anchor compound having a functional group capable of forming a complex with cobalt ions and/or a functional group strongly adsorbed on cobalt.

According to one or more embodiments of the present invention, the method includes using_XO_Y^Z-The anchor compound of inorganic oxygen-containing anion, where A is a chemical element, O Is oxygen, X is an integer, Y is an integer, and Z is an integer. Some examples of inorganic oxyanions for one or more embodiments of the present invention include, but are not limited to, phosphoric acid groups and phosphorous acid groups.

According to one or more embodiments of the present invention, the present invention includes the use of an anchor compound having the following general formula: (R₁-O)_VnMG_n, Where M is germanium, hafnium, indium, silicon, tantalum, tin, titanium, or tungsten; G is a functional group that can form a chemical bond with metal; R₁-O is a functional group capable of forming a chemical bond with the oxide surface, O is oxygen; V is the valence of M; and n is an integer from 1 to V-1.

According to an embodiment of the present invention, R₁Is an alkyl group, M is silicon, and G is an alkylamine.

One or more embodiments of the present invention include anchor compounds using the above-presented molecular formula, wherein G_nContains functional groups such as (but not limited to) an amine group, an imine group, an epoxy group, a hydroxyl group, a carboxyl group, a carboxylic acid group, a phosphoric acid group, a phosphonic acid group, or a combination thereof. Optionally, one or more embodiments of the present invention include the use of anchor compounds, where G_nContains a sulfonic acid group, a boric acid group, a carbonate group, a hydrogen carbonate group, or a combination thereof. One or more embodiments of the present invention include the use of anchor compounds, wherein (R₁-O)_VnContains methoxy, ethoxy, propoxy, or a combination thereof. One or more embodiments of the present invention include the use of anchor compounds, wherein (R₁-O)_VnContains a methoxy group, an ethoxy group, a propoxy group, or a combination thereof, and G includes an amine group, an imino group, an epoxy group, a hydroxyl group, a carboxyl group, a carboxylic acid group, a phosphoric acid group, a phosphonic acid group, or a combination thereof .

According to one or more embodiments of the present invention, the method includes using monoalkoxysilanes or bisalkoxysilanes, and derived from amine-based groups, imine-based groups, carboxylic acid-based groups, cyano-based groups, and phosphoric acid groups. An anchor compound of at least one of the group consisting of a phosphate group, a phosphorous acid group, a phosphonic acid group, and an epoxy group.

According to one or more embodiments of the present invention, the method further includes making the surface of the metalized contact such as the metal contact 130 substantially free of oxide before chemically bonding the anchor compound and the dielectric oxide 115. This additional step is optional and can be used only in the content Metalized contacts formed by Xu oxide. The oxide is removed from the metalized joint so that the subsequent processing of bonding the anchor compound to the dielectric oxide does not bond the anchor compound to the oxide formed on the metalized joint.

The method according to one or more embodiments of the present invention may also include heat treatment to more completely bond the anchor layer to the dielectric. The heat treatment may include heating the substrate during and/or after exposing the substrate to the anchor compound. According to one or more embodiments of the present invention, the heat treatment is performed before the growth of the gap filler metal is started.

According to one or more embodiments of the present invention, examples of dielectric oxides suitable for use as the dielectric oxide 115 include, but are not limited to, aluminum oxide (Al₂O₃), silicon dioxide (SiO₂), carbon-doped silicon dioxide (SiOC), silicon-based low-k dielectrics, and silicon oxides such as SiOCH, SiON, SiOCN, and SiochN. Alternative oxides of the embodiments of the present invention include but are not limited to tantalum pentoxide (Ta₂O₅) And titanium dioxide (TiO₂). Optionally, according to one or more embodiments of the present invention, the dielectric oxide can be a surface oxide formed on different materials, such as (but not limited to) aluminum nitride, silicon nitride, Silicon carbonitride and silicon oxide on silicon carbide materials.

One or more embodiments of the invention may include the use of various gap filler metals. Examples of gap filler metals suitable for one or more embodiments of the present invention include, but are not limited to, cobalt, copper, gold, iridium, nickel, osmium, palladium, platinum, rhenium, ruthenium, rhodium, silver, tin, Metals of zinc, electroless plating alloys, or mixtures thereof. According to an embodiment of the present invention, the gap filler metal includes cobalt. According to another embodiment of the present invention, the gap filler metal includes cobalt, and the metal contact includes nickel platinum silicide. According to another embodiment of the present invention, the gap filler metal includes cobalt, the metal contact includes nickel platinum silicide, and the anchor compound includes oxygen-containing anions.

According to one or more embodiments of the present invention, various compounds can be used as the anchor compound. According to an embodiment of the present invention, the anchor compound is applied to the substrate using a wet chemical treatment as a liquid or a liquid solution-like component. According to one or more embodiments of the present invention, the anchor compound is dissolved in a liquid such as (but not limited to) water, water-soluble solvent, dimethyl sulfide, formamide, acetonitrile, ethanol, or a mixture thereof. In view of the content of the present disclosure, other water-soluble solvents suitable for the embodiments of the present invention are generally available in the field The skilled person will be obvious. According to another embodiment of the present invention, the anchor compound is applied to the substrate using dry chemical processing or using substantially dry chemical processing like gas or vapor. More specifically, according to one or more embodiments of the present invention, the anchor compound is applied to the substrate like a gas under the condition that the anchor compound is bonded to the dielectric oxide of the substrate. Optionally, the gas phase anchor compound may be mixed with another gas such as (but not limited to) a substantially inert carrier gas.

In another embodiment of the present invention, the anchor layer 135 is made by immersing the substrate in the anchor compound at a temperature from about 10°C to about 95°C for a period of from about 30 seconds to about 600 seconds. It is formed by bonding the anchor compound to the oxide surface in a solution containing the anchor compound. According to another embodiment, the substrate is immersed in the solution containing the anchor compound at a temperature from about 50°C to about 70°C for about 60 seconds to about 180 seconds to bond the anchor compound to the oxide surface.

According to one or more embodiments of the present invention, the method includes providing a substrate having metalized contacts and a dielectric oxide. The dielectric oxide has through holes to metallized contacts. The method includes bonding the anchor compound and the dielectric oxide by exposing the dielectric oxide to the anchor compound and/or to a solution containing the anchor compound to form an anchor layer on the dielectric oxide. The method further includes the use of metallized contacts to initiate selective growth of gap filler metal. Optionally, the selective growth of the gap filler metal can be accomplished by processes such as (but not limited to) atomic layer deposition, chemical vapor deposition, and electroless deposition. The gap filler metal is grown so that the anchor layer formed by the anchor compound bonded with the dielectric oxide is also bonded with the gap filler metal adjacent to or in contact with the dielectric oxide. The anchor compound and the resulting anchor layer are selected so that it does not significantly cause the growth of gap filler metal. More specifically, the growth of the gap filler metal is the result of the growth initiated by the metal contacts at the bottom of the groove and/or through hole. The continuous growth of the metal gap fill makes the through hole and/or the groove at least be filled with the gap fill metal. Planarization can be used after gap filling is complete. According to one or more embodiments of the present invention, the gap filler metal is a metal containing cobalt or a cobalt alloy.

Another embodiment of the present invention includes electronic devices such as (but not limited to) integrated circuits. Refer to Figure 3 again. According to an embodiment of the present invention, the electronic device includes such as The base 110 of the semiconductor wafer, the metalized contact 130, the dielectric oxide 115 with the through hole 120 to the metalized contact 130, the gap filler metal 140 that grows from the metalized contact 130 to substantially fill the through hole 120, And the anchor layer 135 chemically bonded between the surface of the dielectric oxide 115 and the gap filler metal 140. The electronic device does not substantially have an anchor layer at the interface between the metalized contact 130 and the gap filler metal 140.

According to one or more embodiments of the present invention, the anchor compound is a chemical reaction product derived from the reaction between the anchor compound and the oxide surface and the reaction with the gap filler metal, and the anchor compound has the following general formula: ( R₁-O)_VnMG_n, Where M is germanium, hafnium, indium, silicon, tantalum, tin, titanium, or tungsten; G is a functional group that can form a chemical bond with metal; R₁-O is a functional group capable of forming a chemical bond with the oxide surface, O is oxygen; V is the valence of M; and n is an integer from 1 to V-1.

According to an embodiment of the present invention, R₁Is an alkyl group, M is silicon, and G is an alkylamine. As an option for one or more embodiments of the present invention, G includes an amino group, an imino group, an epoxy group, a hydroxyl group, a carboxyl group, a carboxylic acid group, a phosphoric acid group, a phosphonic acid group, or a combination thereof. As an option for one or more embodiments of the present invention, R₁-Is an alkyl group.

According to one or more embodiments of the present invention, the anchor compound comprises monoalkoxysilane or bisalkoxysilane, and derived from amine group, imine group, carboxylic acid group, cyano group, phosphoric acid group, phosphorous acid At least one of the group consisting of a phosphonic acid group, a phosphonic acid group, and an epoxy group.

According to one or more embodiments of the present invention, the anchor compound has the molecular formula presented above, where G_nContains such as (but not limited to) an amine group, an imine group, an epoxy group, a hydroxyl group, a carboxyl group, a carboxylic acid group, a phosphoric acid group, a phosphonic acid group, or a combination of functional groups. According to one or more embodiments of the present invention, the anchor compound has the molecular formula presented above, where G_nContains a sulfonic acid group, a boronic acid group, a carbonate group, a hydrogen carbonate group, or a combination thereof. According to one or more embodiments of the present invention, the anchor compound has the above-presented molecular formula, wherein (R₁-O)_VnContains methoxy, ethoxy, propoxy, or a combination thereof. According to one or more embodiments of the present invention, the anchor compound has the molecular formula presented above, wherein (R₁-O)_VnContains a methoxy group, an ethoxy group, a propoxy group, or a combination thereof, and G contains an amino group, an imino group, an epoxy group, a hydroxyl group, a carboxyl group, a carboxylic acid group, a phosphoric acid group, a phosphonic acid group, or a combination thereof Combine.

According to one or more embodiments of the present invention, the anchor layer is a chemical reaction product derived from the reaction between the anchor compound and the oxide surface and the reaction with the gap-filling metal, and the anchor compound includes inorganic oxygen-containing anions, Amino, imino, cyano, or a combination thereof. One or more embodiments of the present invention use an anchor compound having a functional group that can form a complex with ions of a metal used for gap filling and/or a functional group that is strongly adsorbed on the gap filling metal. Embodiments of the present invention using cobalt in the gap fill metal include the use of an anchor compound having a functional group that can form a complex with cobalt ions and/or a functional group that strongly adsorbs on the cobalt.

According to one or more embodiments of the present invention, the anchor layer is a chemical reaction product derived from the reaction between the anchor compound and the oxide surface and the reaction with the gap-filling metal, and the anchor compound includes the general formula A_XO_Y^Z-The inorganic oxygen-containing anion of, where A is a chemical element, O is oxygen, X is an integer, Y is an integer, and Z is an integer. Some examples of inorganic oxyanions for one or more embodiments of the present invention include (but are not limited to) phosphate groups and phosphite groups.

According to one or more embodiments of the present invention, the dielectric oxide such as the dielectric oxide 115 includes such as (but not limited to) alumina (Al₂O₃), silicon dioxide (SiO₂), carbon-doped silicon dioxide (SiOC), silicon-based low-k dielectric oxides, and silicon oxides such as SiOCH, SiON, SiOCN, and SiochN. Alternative oxides of the embodiments of the present invention include but are not limited to tantalum pentoxide (Ta₂O₅) And titanium dioxide (TiO₂). Optionally, according to one or more embodiments of the present invention, the dielectric oxide can be a surface oxide formed on different materials, such as (but not limited to) aluminum nitride, silicon nitride, Silicon carbonitrides and oxides on silicon carbide materials.

One or more embodiments of the invention may include the use of various gap filler metals. Examples of gap filler metals suitable for one or more embodiments of the present invention include, but are not limited to, cobalt, copper, gold, iridium, nickel, osmium, palladium, platinum, rhenium, ruthenium, rhodium, silver, tin, zinc, Electroless plating of alloys, or metals of their mixtures. According to an embodiment of the present invention, the room The gap filler metal contains cobalt. According to another embodiment of the present invention, the gap filler metal includes cobalt, and the metal contact includes nickel platinum silicide. According to another embodiment of the present invention, the gap filler metal includes cobalt, the metal contact includes nickel platinum silicide, and the anchor compound includes oxygen-containing anions.

According to one or more embodiments of the present invention, the above method of manufacturing an electronic device and the above electronic device include using a liquid solution to bond an anchor compound to a dielectric oxide to form an anchor layer. The anchor compound has at least one functional group capable of forming a chemical bond with the surface of the oxide, and at least one functional group capable of forming a chemical bond with a metal.

According to one or more embodiments of the present invention, the solution contains an anchor compound having the following general formula: (R₁-O)_VnMG_n, Where M is germanium, hafnium, indium, silicon, tantalum, tin, titanium, or tungsten; G is a functional group that can form a chemical bond with metal; R₁-O is a functional group capable of forming a chemical bond with the oxide surface, O is oxygen; V is the valence of M; and n is an integer from 1 to V-1.

According to an embodiment of the present invention, R₁Is an alkyl group, M is silicon, and G is an alkylamine. As an option for one or more embodiments of the present invention, G includes an amine group, an imino group, an epoxy group, a hydroxyl group, a carboxyl group, a carboxylic acid group, a phosphoric acid group, a phosphonic acid group, or a combination thereof. As an option for one or more embodiments of the present invention, R₁-Is an alkyl group.

According to one or more embodiments of the present invention, the anchor compound in the solution comprises monoalkoxysilane or bisalkoxysilane, and derived from amine group, imino group, carboxylic acid group, cyano group, phosphoric acid At least one of the group consisting of a phosphate group, a phosphite group, a phosphonic acid group, and an epoxy group.

According to one or more embodiments of the present invention, the anchor compound has the molecular formula presented above, where G_nContains functional groups such as (but not limited to) an amine group, an imine group, an epoxy group, a hydroxyl group, a carboxyl group, a carboxylic acid group, a phosphoric acid group, a phosphonic acid group, or a combination thereof. According to one or more embodiments of the present invention, the anchor compound has the molecular formula presented above, where G_nContains a sulfonic acid group, a boric acid group, a carbonate group, a hydrogen carbonate group, or a combination thereof. According to this In one or more embodiments of the invention, the anchor compound has the above-presented molecular formula, wherein (R₁-O)_VnContains methoxy, ethoxy, propoxy, or a combination thereof. According to one or more embodiments of the present invention, the anchor compound has the molecular formula presented above, wherein (R₁-O)_VnContains a methoxy group, an ethoxy group, a propoxy group, or a combination thereof, and G comprises an amino group, an imino group, an epoxy group, a hydroxyl group, a carboxyl group, a carboxylic acid group, a phosphoric acid group, a phosphonic acid group, or a combination thereof combination.

According to one or more embodiments of the present invention, the solution includes an anchor compound, and the anchor compound includes an inorganic oxyanion, an amine group, an imine group, a cyano group, or a combination thereof. According to one or more embodiments of the present invention, the solution includes an anchor having a functional group that can form a complex with ions of a metal used for gap filling, and/or a functional group that is strongly adsorbed on the gap filling metal Compound. For the embodiment of the present invention in which cobalt is used in the gap fill metal, the solution contains an anchor compound having a functional group that can form a complex with cobalt ions and/or a functional group that is strongly adsorbed on the cobalt.

According to one or more embodiments of the present invention, the solution includes an anchor compound, and the anchor compound includes an anchor compound having the general formula A_XO_Y^Z-The inorganic oxygen-containing anion of, where A is a chemical element, O is oxygen, X is an integer, Y is an integer, and Z is an integer. Some examples of inorganic oxyanions for one or more embodiments of the present invention include, but are not limited to, phosphoric acid groups and phosphorous acid groups.

According to one or more embodiments of the present invention, the solution includes: a certain amount of optional water-soluble solvent; a certain amount of at least one functional group capable of forming a chemical bond with the oxide surface, and having the ability to form a gap filler metal The anchor compound of at least one functional group of the chemical bond; and a certain amount of water. According to one or more embodiments of the present invention, the solution includes a solvent and an anchoring agent that does not have a water-soluble solvent. According to one or more embodiments of the present invention, the anchor compound includes an inorganic oxygen-containing anion, such as (but not limited to) a phosphoric acid group, a phosphorous acid group, an amine group, an imine group, a cyano group, and a combination thereof, or may Functional groups that form complexes with metal ions and/or strongly adsorb on gap-filled metals.

According to an embodiment of the present invention, the solution contains a certain amount of anchor compound. Generally speaking, the anchor compound has at least one functional group that can form a chemical bond with the oxide surface, and at least one functional group that can form a chemical bond with the gap-filling metal. In this In another embodiment of the invention, the solution includes a certain amount of water-soluble solution, a certain amount of anchoring compound, and a certain amount of water.

The anchor compound used in the embodiments of the present invention may have many chemical components. There are many options for the at least one functional group capable of forming a chemical bond with the oxide surface and for the at least one functional group capable of forming a chemical bond with the metal. Some embodiments of the present invention may include anchor compounds having two or three or more functional groups capable of forming chemical bonds with the oxide surface. Likewise, some embodiments of the present invention may include anchor compounds having two or three or more functional groups capable of forming chemical bonds with gap filler metals. Optionally, a plurality of anchor compounds can be selected, which contain different types of functional groups capable of forming chemical bonds with the oxide surface. A plurality of anchor compounds can be selected, which contain different types of functional groups capable of forming chemical bonds with metals. The embodiments of the present invention can also use mixtures of different types of anchoring compounds.

According to an embodiment of the present invention, the anchor compound includes monoalkoxysilanes, bisalkoxysilanes, and alkoxysilanes such as trialkoxysilanes for forming chemical bonds with the oxide surface. The anchor compound further includes one or more polar groups that form a chemical bond with the gap-filling metal, such as (but not limited to) an amine group, an imine group, a carboxylic acid group, a phosphoric acid group, a phosphonic acid group, and an epoxy group. The anchor compound according to some embodiments of the present invention may include different polar groups or a mixture of different polar groups as an option. For the specific embodiment of the present invention, the type and amount of the anchoring compound are selected so that the solution provides an effective amount of the anchoring compound to the oxide surface to achieve enhanced bonding between the oxide and the gap-filling metal.

For another embodiment of the present invention, the solution contains the general formula (R₁-O)_VnMG_nAn anchor compound of, where M is germanium, hafnium, indium, silicon, tantalum, tin, titanium, or tungsten; G is a functional group that can form a chemical bond with gap filler metal; R₁-O is a functional group capable of forming a chemical bond with the oxide surface, O is oxygen; V is the valence of M; and n is an integer from 1 to V-1. An embodiment of the present invention includes such as (but not limited to) amine group, imine group, epoxy group, hydroxyl group, carboxyl group, carboxylic acid group, phosphoric acid group, phosphonic acid group, sulfonic acid group, boric acid group, carbonic acid Group, bicarbonate group, or a combination of one or more polar groups G. Preferably, R₁Is an organic group such as an alkyl group, and R₁-O is alkoxy such as methoxy, ethoxy, and propoxy Department of base. For another embodiment of the present invention, (R₁-O)_VnContains one or more functional groups such as (but not limited to) methoxy, ethoxy, propoxy, and combinations thereof, and G_nContains one or more functional groups such as (but not limited to) amine groups, imine groups, epoxy groups, hydroxyl groups, carboxyl groups, carboxylic acid groups, phosphoric acid groups, phosphonic acid groups, and combinations thereof. In another more preferred embodiment, R₁Is an alkyl group, M is silicon, and G is an alkylamine.

Another embodiment of the present invention is a solution containing components for electroless deposition and an anchor compound. The components used for electroless deposition may include, but are not limited to, solvents, reducing agents used for electroless deposition, and ions and/or complexes of one or more metals used for electroless deposition of gap filler metals. The description of the typical electroless deposition solution and the composition of the electroless deposition solution can be found in the common patents: U.S. Patent No. 6,794,288 by Kolics et al. and U.S. Patent No. 6,911,076 by Kolics et al.; the entire contents of these patents are incorporated herein for reference. refer to. Descriptions of other electroless deposition solutions and the components of electroless deposition solutions can also be found elsewhere in the scientific and patent literature.

The anchor compound has at least one functional group that can form a chemical bond with the oxide surface, and at least one functional group that can form a chemical bond with the gap filler metal. The details and examples of the anchor compound contained in the solution with the components for electroless deposition according to one or more embodiments of the present invention are presented above.

The solution according to an embodiment of the present invention contains components for electroless deposition and an anchor compound. The anchor compound has the general formula (R₁-O)_VnMG_n, Where M is germanium, hafnium, indium, silicon, tantalum, tin, titanium, or tungsten; G is a functional group that can form a chemical bond with metal; R₁-O is a functional group capable of forming a chemical bond with the oxide surface, O is oxygen; V is the valence of M; and n is an integer from 1 to V-1.

The solution according to an embodiment of the present invention contains components for electroless deposition and an anchor compound. The anchor compound includes an inorganic oxyanion, a phosphoric acid group, a phosphorous acid group, a phosphonic acid group, an amine group, an imine group, a cyano group, or a combination thereof.

The solution according to an embodiment of the present invention contains components for electroless deposition and an anchor compound. The anchor compound contains inorganic oxygen-containing anions, amine groups, imine groups, A cyano group, a functional group that forms a complex with the ions of the gap-filling metal, a functional group that is strongly adsorbed on the gap-filling metal, or a combination thereof.

The solution according to an embodiment of the present invention contains components for electroless deposition and an anchor compound. The anchor compound contains the general formula A_XO_Y^Z-The inorganic oxygen-containing anion of, where A is a chemical element, O is oxygen, X is an integer, Y is an integer, and Z is an integer.

The solution according to an embodiment of the present invention contains components for electroless deposition and an anchor compound. The anchor compound includes monoalkoxysilane, bisalkoxysilane, or trialkylsilane, and is derived from an amine-based group, an imine-based group, a carboxylic acid-based group, a phosphoric acid-based group, a phosphonic acid-based group, and At least one of the epoxy-based group.

In the foregoing description, the present invention has been described with reference to specific embodiments. However, those skilled in the art understand that various modifications and changes can be made without departing from the scope of the present invention as set forth in the following claims. Therefore, the description and drawings should be regarded as illustrative rather than restrictive concepts, and all such modifications are intended to be included in the scope of the present invention.

Benefits, other advantages, and solutions to problems have been described above with respect to specific embodiments. However, benefits, advantages, solutions to problems, and any element that can cause any benefits, advantages, or solutions to occur or become more significant should not be construed as critical, necessary, or impossible for any or all of the claims Missing features or elements.

As the terms used here: "include", "have", "at least one" or any other variation thereof means to cover non-exclusive inclusions. For example, a process, method, article, or device containing a series of elements is not necessarily limited to these elements, but may include other elements that are not explicitly listed or inherent to the process, method, article, or device. Further, unless expressly stated to the contrary, "or" means an inclusive or and does not mean an exclusive or. For example, condition A or B is satisfied by any of the following: A is yes (or present) and B is not (or not presented), A is not (or not presented) and B is yes (or presented), And both A and B are (or present).