Millisecond annealing (dsa) edge protection

Edge protection of millisecond annealing (DSA)

MILLISECOND ANNEALING (DSA) EDGE PROTECTION

The embodiments of the present invention generally relate to equipment and methods for manufacturing semiconductor devices. More specifically, the present invention is directed to equipment and methods for heat treatment of substrates.

The integrated circuit (IC) market has a continuous demand for larger memory capacity, faster switching speed, and smaller feature size. The main step in the industry to address these needs is to change the batch processing of silicon substrates in large furnaces to single substrate processing in small chambers.

In a single substrate processing process, the substrate is usually heated to a high temperature to allow various chemical and physical reactions in the multiple IC elements defined by the portion of the substrate. It is particularly worth noting that the better electrical performance of the IC device requires annealing the implanted area. Annealing reforms the previously amorphous regions of the substrate into a crystalline structure and activates the dopants by incorporating dopant atoms into the crystalline lattice of the substrate. The heat treatment (for example, annealing) needs to provide a relatively large amount of heat energy to the substrate in a short time, and then rapidly cool the substrate to terminate the heat treatment. Examples of heat treatment currently used include rapid thermal processing (RTP) and impulse annealing (spike annealing). Even if the IC components are only a few microns on top of the silicon substrate, the conventional RTP process still heats the entire substrate. This limits the speed at which a process can heat and cool the substrate. Furthermore, once the temperature of the entire substrate is increased, the heat will dissipate into the surrounding space or structure instead. Therefore, the most advanced RTP systems currently strive to achieve a temperature rise rate of 400°C/s and a temperature drop rate of 150°C/s. RTP and spike annealing treatments are widely used, but the current technology is not ideal because during the heat treatment, the heating rate of the substrate is too slow, and the substrate is exposed to high temperature for a long time. This thermal budget (thermal The problem of budget) becomes more serious as the substrate size increases, the switching speed increases, and/or the feature size decreases.

In order to solve some of the problems in the conventional RTP processing, a variety of scanning laser annealing techniques have been used to anneal the substrate surface. Generally speaking, when the substrate is moved or scanned relative to the energy delivered to the small areas on the surface of the substrate, these technologies transfer a constant energy flux to the small areas. Due to strict uniformity requirements and the complexity of minimizing the overlap of scanning areas across the substrate surface, these types of processing are inefficient for heat treatment of contact layer components formed on the substrate surface.

Dynamic surface annealing (DSA) technology has been developed to anneal a limited area of the substrate surface to provide a well-defined annealing and/or remelting area on the substrate surface. Generally, during this laser annealing process, various areas on the surface of the substrate are successively exposed to a desired amount of energy delivered from the laser, so as to cause preferential heating of the desired area of the substrate. These technologies are superior to the conventional processing of sweeping laser energy across the substrate surface, because the overlap between adjacent scanning areas is strictly limited by the unused space between the dies or The kurf line results in uniform annealing across the desired area of the substrate.

One of the disadvantages of the DSA technology is that the annealing of a part of the substrate surface will cause the interface area between the annealed part and the unannealed part to be subjected to high thermal stress during annealing, because the temperature difference is as high as 500°C. In most cases, the thermal stress relaxation from the annealed area is conducted by heat to the unannealed area of the substrate. However, as the annealing process proceeds to the edge of the substrate, the availability of the heat absorbing substrate area is reduced due to the proximity to the edge, and thermal stress may cause physical deformation or cracking of the substrate. "Figure 1" shows an annealing process for annealing the portion 102 close to the edge 104 of the substrate 100. The electromagnetic energy 106 emitted by the source 108 heats the portion 102, while the edge 110 is still in an unheated state. Due to the relatively small heat absorption capacity of the edge portion 110, high thermal stress is generated in the interface area between the annealed portion 102 and the edge portion 110. The high thermal stress is generally alleviated by deformation or cracking in the edge region 110 close to the edge 104 of the substrate 100. Therefore, there is a need for a heat treatment equipment and method that can anneal all desired areas of the substrate without damaging the substrate.

An embodiment of the present invention provides an apparatus for processing a substrate in a processing chamber. The equipment includes: a substrate support configured to position a substrate for processing; an energy source configured to guide an electromagnetic energy toward the substrate support; and one or more energy blockers configured to Block at least part of the electromagnetic energy.

Another embodiment of the present invention provides a method of processing a substrate in a processing chamber. The method includes: using a substrate support to position the substrate in the processing chamber; directing an electromagnetic energy toward at least a part of the substrate; and blocking at least a part of the electromagnetic energy from irradiating the substrate.

The embodiment of the present invention provides an apparatus and method for heat-treating a substrate. In a processing chamber configured for heat treatment (including directing electromagnetic energy toward at least a part of the surface of the substrate), a device is provided to block at least a part of the electromagnetic energy from reaching the substrate. The device is configured to allow the substrate to be inserted and removed by any of several devices, and can resist the environment during substrate processing.

"Figure 2" is a cross-sectional view of the heat treatment chamber 200 according to an embodiment of the present invention. The chamber 200 is characterized by a wall 202, a bottom plate 204, and a top portion 206, and the wall 202, the bottom plate 204, and the top portion 206 cooperatively define a processing chamber. The processing chamber includes a substrate support 208 to position the substrate in the chamber. The substrate support 208 includes a pipe portion 210, and the pipe portion 210 passes through the bottom plate 204 to transport various processing media to and from the substrate support. The duct portion 210 includes a channel 212 to transport the processing medium to the surface of the substrate support 208 through the opening 214. The duct part 210 may also include a channel 216 for conveying the heat control medium to the pipe inside the substrate support 208 so as to heat or cool the substrate support 208. For the purpose of illustration, the substrate 250 shown is disposed on the substrate support 208.

The substrate can be guided into the chamber 200 through the entrance 218, and if desired, the entrance 218 can be sealed by a door (not shown). The processing gas can be guided into the processing chamber through the inlet 220, and can be discharged through the opening 222 or through other suitable conduits. In some embodiments, for example, it is advantageous to discharge the processing gas through a conduit in the substrate support 208. In other embodiments, the gas can be provided to the back side of the substrate provided on the substrate support 208 through a duct (not shown in the figure) in the substrate support 208. This gas can also be used for thermal control of substrate processing under high vacuum. The heat control gas is usually different from the process gas.

The chamber 200 is generally arranged in parallel with a source (not shown in the figure) for guiding electromagnetic energy toward the substrate disposed in the chamber 200. Electromagnetic energy is allowed to enter the processing chamber through a window 224 provided in the top portion 206, and the window 224 is made of quartz or other suitable materials for transmitting electromagnetic energy while also being able to withstand the processing environment. The chamber 200 also includes an energy blocker 226 configured to block at least a portion of the electromagnetic energy from the source toward the substrate support 208.

The chamber 200 also includes a lifting pin assembly 228, which is used to operate the energy blocker and the substrate inside the device. In one embodiment, the lifting pin assembly 228 includes a plurality of lifting pins 230 for operating the base plate 250 and a plurality of lifting pins 232 for operating the energy blocker 226. The lifting pin can enter the chamber 200 through a plurality of channels 234.

"Figure 2A" is a detailed view of part of the chamber 200. The window 224, the energy blocker 226, and the inlet 220 can be seen, and the lift pin assembly 228 is shown in detail. The guide of the lifting pins 230 and 232 is guided by the guide tube 236 to ensure proper alignment of the lifting pins 230 and 232. In one embodiment, the lift pins 230, 232 are surrounded by a shuttle 246, and the shuttle 246 contacts the inner side of the guide tube 236 to maintain the pair of the lift pins 230, 232 and the guide tube 236 allow. The shuttle 246 can be any hard material, but preferably has a low friction surface to collide with the surface of the guide tube. In one embodiment, the shuttle mechanism 246 is ferritic stainless steel with a plastic bushing (not shown) to contact the guide tube 236. In some embodiments, the lifting pins 230, 232 can be operated by an actuator collar 238, and the collar 238 is magnetically coupled to the lifting pins 230, 232 through a shuttle mechanism 246. As shown in "Figure 2A". The actuator collar 238 is configured to move in the longitudinal direction relative to the guide tube 236, thereby extending and retracting the lifting pins 230, 232 as needed. The actuator arm system moves the actuator collar 238 along the guide tube 236 to extend and retract the lift pin. In this embodiment, a single actuator arm 240 operates the lift pins 230 and 232, but multiple actuator arms may be used as needed. The extension of the lifting pin 232 into the chamber 200 is limited by the stopper 242. A guide tube spring 244 may be provided as shown in "FIG. 2A" to allow the actuator arm 240 to continue to move toward the chamber 200 after the lifting pin 230 has been shortened by the stopper 242. In this way, when the actuator arm 240 is used to move the lifting pins 230 and 232, the lifting pin 230 can continue to move after the lifting pin 232 is blocked. In this embodiment, the lifting pin 232 is longer than the lifting pin 230, whereby the lifting pin 230 allows the lifting pin 232 to lift the energy blocker 226 before lifting the substrate 250 away from the substrate support 208 rise.

The energy blocker 226 is configured to block a portion of the electromagnetic energy directed toward the substrate 250 through the window 224. As will be described in detail below, the energy blocker 226 may be configured such that a part of the energy blocker 226 is supported on the substrate support 208 and the other part extends above a part of the substrate support 208. In some embodiments, the energy blocker 226 casts a shadow on the edge of the substrate provided on the substrate support 208. The energy blocker 226 may therefore be referred to as a shadow ring or edge ring. The lift pin can operate the energy blocker 226 by tightly mating with the groove.

During operation, the lift pin 232 extends into the processing chamber and lifts the energy blocker 226 to place it above the substrate support 208 and a sufficient distance from the substrate support 208 to allow the operation to be set on the substrate When the substrate 250 on the support 208 is not in contact with the energy blocker 226. The lift pin 230 extends into the processing chamber to lift the substrate 250 above the substrate support 208, and allows the substrate conveying member (not shown) to enter the processing chamber through the inlet 218 ("Figure 2"), and Obtain the substrate. When the actuator 240 moves the lifting pins 230 and 232 upward, the actuator collar 238A will collide with the stopper 242. The actuator arm 240 continues to move, and while the actuator collar 238B continues to move the lifting pin 230 upward, the guide tube spring 244 is pressed against the actuator collar 238A. When the substrate conveying member extends into the processing chamber, the actuator arm 240 retracts the lifting pin 230 until the guide tube spring 244 is in a fully extended state, and then both the lifting pins 230 and 232 are retracted Until the substrate 250 and the energy blocker 226 are supported on the substrate support 208. In this embodiment, since there is a single actuator 240, the lifting pins 230 and 232 are extended and retracted together. In the embodiment with multiple actuators, when the substrate support 208 is not provided with a substrate, the lifting pin 232 may still be in an extended state. When the substrate is provided into the processing chamber through the transfer member, the lift pin 230 then extends to lift the substrate above the transfer member, and allows the transfer member to pass from the processing chamber through the inlet 218 ("Figure 2") Retracted. The lift pin 230 can then be retracted to set the substrate on the substrate support 208. The lift pin 232 can then be retracted to place the energy blocker 226 in the processing position.

In order to remove the substrate from the chamber, the lift pins 230, 232 are operated in reverse. In the single actuator embodiment, the lift pins 230, 232 extend into the processing chamber. The lift pin 232 first engages with the energy blocker 226 and lifts it above the substrate support 208. After a short time, the lifting pin 230 is engaged with the substrate 250, and the energy blocker 226 and the substrate 250 are raised above the substrate support 208 by operating the lifting pins 230 and 232. When the actuator collar 238A touches the stopper 242, the lift pin 232 stops rising, and when the actuator arm 240 continues to move upward, the guide tube spring 244 is compressed. When the actuator arm 240 continues to move upward, the lifting pin 230 continues to move, while the lifting pin 232 remains stationary. Therefore, the substrate 250 supported by the lifting pin 232 approaches the energy blocker 226. When the collar 238B reaches the upper end of the guide tube 236, the actuator arm 240 and the lifting pin 230 stop moving. The substrate handling equipment will then extend into the processing chamber. The actuator arm will then be lowered so that the substrate 250 is lowered onto the substrate handling equipment and removed from the chamber. In the multi-actuator embodiment, when the substrate is moved from the substrate support 208 to the substrate handling equipment by operation, and when a new substrate is operated on the substrate support 208, the lift pin 232 can still be fully Extension state.

"Figure 3" is a top view of a device according to an embodiment of the present invention. "Figure 3" shows an embodiment of the energy blocker 300 as described above. In some embodiments, the energy blocker 300 is a radiation blocker. In this embodiment, the energy blocker 300 is a ring with a ring shape, and is formed as a single object configured to block the energy that is partially guided toward the substrate support 208. In some embodiments, the energy blocker 300 is opaque, while in other embodiments, the energy blocker 300 is partially transparent to some frequencies of the electromagnetic energy used for substrate annealing and blocks other frequencies. In this embodiment, the substrate support 208 is characterized in that the opening 302 allows the lifting pin 230 ("Figures 2 and 2A") to be changed from being disposed under the substrate support 208 to operating on the substrate support 208. Substrate. In this embodiment, the feature of the energy blocker 300 is a protrusion 304 for tightly fitting with the lifting pin 232 ("Figures 2 and 2A"). The lift pin moves the energy blocker 300 to allow the transfer of the substrate inside the processing chamber. The energy blocker 300 is also characterized by an alignment point 306 for aligning the energy blocker 300 with the substrate support 208.

"Picture 3A" is a detailed view of a part of the equipment in "Picture 3". A part of the energy blocker 300 is shown in the figure, in which the lifting pin protrusion 304 and the alignment point 306 can be seen. The substrate support 208 and the opening 302 therein can also be seen in the figure, and the lift pin 230 shown in the figure is in an extended position. The lifting pin 232 shown is also in its extended position and is tightly fitted with the protrusion 304. In this embodiment, the lifting pin 232 penetrates the concave portion 310 to tightly fit with the convex portion 304. In this embodiment, the lifting pin and the recess have a circular cross-sectional shape, but in other embodiments, they have other shapes, such as square, rectangular, triangular, elliptical and similar shapes. In addition, although the embodiment of "Figure 3" is characterized by three protrusions for three lift pins, any number of lift pins can be used as long as the energy blocker can be properly operated. In this embodiment, the alignment point 306 is a tapered pin protruding downward from the curved energy blocker 300 and is tightly matched with the notch 312. From above the energy blocker 300, the alignment point 306 looks like a recess in the upper surface of the energy blocker 300. Any configuration and number of alignment points 306 designed to ensure that the energy blocker 300 is aligned with the substrate support 208 can be used. For example, an alignment pin may be provided on the substrate support 208 and align upwardly with the recess formed in the energy blocker 300. The alignment of the energy blocker 300 and the substrate support 208 ensures that the desired part of the substrate provided on the substrate support 208 is shielded from electromagnetic radiation.

In the embodiment shown in Figure 3A, the notch 312 is aligned with the recess 314 to allow the lift pin 232 to move freely through the substrate support 208 and engage with the recess 310 in the protrusion 304 . "FIG. 3B" shows another embodiment, in which the alignment point 306 is located away from the recess 314. In the embodiment shown in "Figures 3A and 3B", the energy blocker 300 has a rounded or beveled edge 316. The alignment point 306 also has a rounded or beveled edge 318 on the upper surface of the energy blocker 300. In the above two embodiments, the edge 318 of the alignment point 306 shown is substantially tangent to the inner end of the circular or beveled edge 316 of the energy blocker 300. However, other embodiments may include alignment features in other convenient locations. For the two embodiments shown in the figure, the alignment point 306 is located approximately halfway between the inner edge and the outer edge of the energy blocker 300, or is substantially tangent to the inner edge.

"Figure 4A" is a cross-sectional view of a device according to an embodiment of the present invention. In the illustrated embodiment, the energy blocker 300 is in a separate configuration relative to the substrate support 208. As described above, the lifting pin 232 is tightly matched with the concave portion 310 of the protruding portion 304. The alignment point 306 depicted in this embodiment is a frustroconical pin 406, which protrudes downward from the energy blocker 300 to fit tightly with the notch 312, and is above the energy blocker 300 The surface does not have corresponding recesses. During operation, the energy blocker of this embodiment is configured to be supported on the substrate support 208 during processing. The energy blocker 300 is characterized by a cut-out portion 408 which is designed to maintain a separation relationship with the substrate support 208 when the energy blocker 300 is supported on the substrate support 208. The size of the cut-out portion 408 is designed so that the extension portion 410 extends above a part of the substrate provided on the substrate support 208 during processing. The extension 410 therefore creates a shadow above a part of the substrate supported on the substrate support 208, thereby preventing electromagnetic energy from being irradiated too close to the edge of the substrate. In this way, the energy blocker 300 with the extension 410 protects the edge of the substrate provided on the substrate support 208 from being deformed or damaged due to the extreme thermal stress during processing. The energy blocker 300 is therefore sometimes referred to as a shadow ring or an edge ring. "FIG. 4B" shows another embodiment, as shown in "FIG. 3B", in which the notch 312 is not aligned with the recess 314.

In the embodiment shown in "Figure 4A", the thickness of the energy blocker 300 at its thickest position is as high as about 5 millimeters (mm). The cut-out portion 408 can reduce the thickness by up to about 80%, thereby causing the thickness of the extension 410 to be less than about 3 mm. The extension 410 can create a shadow on the substrate, and the shadow is about 3 mm from the edge of the substrate. During processing, the gap between the extension 410 and the substrate supported on the substrate support 208 is less than about 2 mm. The energy blocker 300 can be made of any material that can withstand the processing environment, but it is preferably made of alumina (Al_xO_y, Where the ratio of y/x is about 1.3~about 1.7), aluminum nitride (AlN), quartz (silicon dioxide; SiO₂) Or silicon carbide (SiC), and the best one is made of alumina. These materials can be used to make the energy blocker opaque, or to enable the energy blocker to transmit some or all of the electromagnetic energy incident on it.

"Figure 5" shows another embodiment of the present invention. The lower part 500 of the processing chamber is visible. The figure shows that the energy blocker 502 is disposed above the substrate supporting surface 504. The substrate support surface 504 is characterized by holes 516, which are used to transport the processing medium to the portion of the substrate on the support surface 504. The energy blocker 502 is characterized by a plurality of protrusions 506 extending from the outer edge of the energy blocker 502. In this embodiment, the energy blocker 502 is a ring with a ring shape and is formed as a single object configured to block electromagnetic energy from reaching at least a part of the substrate provided on the supporting surface 504. The energy blocker 502 can be a shadow ring or an edge ring. The energy blocker 502 also has a plurality of alignment points 508 which are configured as holes in the energy blocker 502 to tightly mate with the pin 510 provided in the lower portion 500 of the chamber. In this embodiment, the energy blocker 502 is operated through a lifting arm 512, and the lifting arm 512 extends below the plurality of protrusions 506. The lifting arm 512 is actuated by the lifting pin 514, and the lifting pin 514 moves the lifting arm 512 in the vertical direction, so that the lifting arm 512 contacts the protrusion 506, thereby blocking the lifting energyDevice502. In this embodiment, the energy blocker 502 may include any material that can block the desired energy and withstand the processing environment. Some of the better materials are discussed above. The energy blocker 502 may be opaque or may transmit part or all of the electromagnetic energy incident thereon.

Other embodiments of the invention are contemplated, although they are not shown in the drawings. The annular energy blocker as described above can be formed by two or more detachable components, and these components can be coupled and decoupled at convenient points in the process of the processing cycle. For example, two or more ring members can be coupled to form a radiation blocker for the processing chamber. During the processing, the ring member is supported on the substrate support to prevent electromagnetic energy from reaching at least a part of the substrate provided on the support. When the substrate is placed in or taken out of the processing chamber, the ring member can be retracted vertically or laterally to allow access to the substrate. For example, the three ring members may each be coupled to a retractor to move each ring member a fixed distance laterally, thereby providing a gap that allows the substrate to be lifted above the substrate support.

"Figure 6" shows another embodiment of the present invention. It can be seen from the figure that the substrate support 600 has an energy blocker 602. In this embodiment, a support ring 604 is provided, which is used to restrain the energy blocker 602 when the energy blocker 602 is not in contact with the substrate support 600. When the energy blocker 602 is not in contact with the support ring 604, the energy blocker 602 is supported on the substrate support 600. The alignment can be achieved by the pins 606 on the substrate support 600, and the pins 606 are configured to fit tightly with the recesses 608 in the energy blocker 602. In this embodiment, the pin 606 shown in the figure is a truncated cone-shaped extension, which protrudes from the substrate support 600 and is configured to be inserted into a recess 608 having a similar shape. However, in other embodiments, the pin 606 and the recess 608 may have suitable shapes, such as a circle, a square, a triangle, and the like.

During operation, the function of the device in "Figure 6" is to passively set the energy blocker on the substrate support 600 during processing. The substrate support 600 is generally movable in this embodiment, and is raised and lowered in the processing chamber to facilitate the insertion and removal of the substrate. When the substrate is set on the substrate support 600, it is raised to the processing position. When the substrate support 600 is raised, the pin 606 contacts and fits tightly with the recess 608, and the energy blocker 602 is lifted from the support ring 604. The extension portion 610 of the energy blocker 602 is extended above a part of the substrate provided on the support 600 by cutting the portion 612, and blocks a part of the electromagnetic energy from being guided toward the substrate. In some embodiments, the energy blocker 602 may be a shadow ring or an edge ring. After processing, the substrate support 600 is lowered to the substrate transfer position. The energy blocker 602 is supported on the support ring 604 and separated from the support 600, thereby creating a space for removing the substrate.

The energy blocker described here can also be used to shield the measurement device so that it will not be affected by undesired radiation in the processing chamber. The device is usually arranged inside the processing chamber to measure various parameters during processing. In many instances, these devices are susceptible to electromagnetic radiation, and can be damaged or inaccurate by the energy directly incident from the energy source. The energy blocker as described in the present invention can be used to prevent the energy from the source directly irradiated to the measuring device. For example, in some embodiments, a temperature measuring device (such as a pyrometer) may be installed inside the processing chamber, and measure the temperature of the substrate by sensing the electromagnetic energy emitted by the substrate. If the energy from the source is directly irradiated to these devices, these devices will become inaccurate. The radiation blocker as described above can block at least a part of the electromagnetic energy that may be directly irradiated on the device.

However, although the present invention is described above with preferred embodiments, it is not intended to limit the present invention. Any changes and modifications made by those skilled in the art without departing from the spirit and scope of the present invention should still belong to the technology of the present invention. category

<p>100. . . Substrate</p><p>102. . . part</p><p>104. . . edge</p><p>106. . . Electromagnetic energy</p><p>108. . . source</p><p>110. . . Edge (partial)</p><p>200. . . (Processing) chamber</p><p>202. . . wall</p><p>204. . . Bottom plate</p><p>206. . . Top part</p><p>208. . . Substrate support</p><p>210. . . Catheter part</p><p>212. . . aisle</p><p>214. . . Opening</p><p>216. . . aisle</p><p>218. . . Entrance</p><p>220. . . Entrance</p><p>222. . . Opening</p><p>224. . . window</p><p>226. . . Blocker</p><p>228. . . Lifting pin assembly</p><p>230. . . Lift pin</p><p>232. . . Lift pin</p><p>234. . . aisle</p><p>236. . . Guide tube</p><p>238,238A,238B. . . Collar</p><p>240. . . Actuator (arm)</p><p>242. . . Stop</p><p>244. . . spring</p><p>246. . . Shuttle mechanism</p><p>250. . . Substrate</p><p>300. . . Energy blocker</p><p>302. . . Opening</p><p>304. . . Bulge</p><p>306. . . Alignment point</p><p>310. . . Recess</p><p>312. . . Notch</p><p>314. . . Depression</p><p>316. . . edge</p><p>318. . . edge</p><p>406. . . pin</p><p>408. . . Cut part</p><p>410. . . Extension</p><p>500. . . Lower part</p><p>502. . . Energy blocker</p><p>504. . . Supporting surface</p><p>506. . . Bulge</p><p>508. . . Alignment point</p><p>510. . . pin</p><p>512. . . Lifting arm</p><p>514. . . Lift pin</p><p>516. . . Hole</p><p>600. . . supporting item</p><p>602. . . Energy blocker</p><p>604. . . Support ring</p><p>606. . . pin</p><p>608. . . Recess</p><p>610. . . Extension</p><p>612. . . Cut part</p>

In order to make the above-mentioned features of the present invention more comprehensible, it can be described with reference to the embodiments, and some of them are shown in the accompanying drawings. It should be noted that although the attached drawings disclose specific embodiments of the present invention, they are not intended to limit the spirit and scope of the present invention. Anyone familiar with the art can make various modifications and modifications to obtain equivalent embodiments. .

Figure 1 shows a representative diagram of the conventional art of the heat treatment equipment for performing the heat treatment of the substrate.

Figure 2 is a cross-sectional view of the device according to an embodiment of the present invention.

Figure 2A shows a detailed view of a part of the equipment in Figure 2.

Figure 3 shows a top view of a device according to an embodiment of the present invention.

Figure 3A shows a detailed view of a part of the equipment in Figure 3.

Figure 3B shows a detailed view of another part of the device in Figure 3.

Figure 4A shows a cross-sectional view of a device according to an embodiment of the present invention.

Figure 4B shows another cross-sectional view of the device according to an embodiment of the present invention.

Figure 5 is a perspective view of a device according to another embodiment of the present invention.

Figure 6 is a cross-sectional view of a device according to another embodiment of the present invention.