Film coating and developing system and coating and developing method

Coating developing device and method

The present invention relates to, for example, a coating and developing device and method for applying a photoresist solution to a substrate such as a semiconductor wafer or an LCD substrate (glass substrate for liquid crystal display), or a development process after exposure.

In the manufacturing process of semiconductor devices or LCD substrates, a photoresist pattern is formed on the substrate by a technique called photolithography. This technology is carried out by a series of processes. For example, a photoresist liquid is applied to a substrate such as a semiconductor wafer (hereinafter referred to as a wafer), and a liquid film is formed on the surface of the wafer. After the photoresist film is exposed, a development process is performed to obtain the desired pattern.

Such processing is generally performed by a photoresist pattern forming device connected to an exposure device in a coating and developing device for coating or developing a photoresist liquid. Such an apparatus, for example, has a structure shown in Patent Document 1. In this apparatus, for example, as shown in FIG. The wafers in 10 are transferred to the processing block 1B by the transfer arm 12. Then, it is transported to the coating unit 13A in the processing block 1B to apply the photoresist liquid, and then transported to the exposure apparatus 1D via the interface block 1C.

The exposed wafer will return to the processing block 1B again, undergo development processing in the imaging unit 13B, and return to the original carrier 10. 14 (14a~14c) in the figure is used for coating unit 13A or imaging unit 13B A shelf unit equipped with a heating unit, a cooling unit, a transfer platform, etc., to perform predetermined heating or cooling treatments on wafers before and after processing. Here, the wafer W will be transported to the processing areas of the coating unit 13A, the imaging unit 13B, and the various parts of the shelf units 14a-14c by two transport means 15A and 15B provided in the processing block 1B. The module room where wafer W is placed in block 1B. At this time, when the wafer W is subjected to the above-mentioned processing, the entire wafer W to be processed is transported in accordance with a transport schedule which is predetermined in which sequence and which module is transported.

However, depending on the type of photoresist film intended, when an antireflection film is formed above and below the photoresist film, or when an antireflection film is formed above and below the photoresist film, or only the photoresist film does not form reflection When preventing the film, the state of coating will be different, so the processing conditions of the coating unit, heating unit, cooling unit, etc. necessary for each batch to form the coating film will be different. In this case, the coating unit, heating unit, and cooling unit are arranged in the same processing block. Because the units used are different according to the type of photoresist film of the purpose, the wafer is transported The flow direction will be different. Therefore, it is necessary to prepare a complicated transport program for each type of photoresist film. The transport program prepared according to the above transport program table is originally complicated. If the transport program is prepared for each photoresist for the purpose, it will form a very complicated operation. .

In addition, in the configuration in which the coating unit, the heating unit, and the cooling unit are provided in the same processing block, the number of units assembled in one processing block is large, the processing block becomes larger, and the occupied area becomes larger. In recent years, as the production capacity of exposure equipment has increased, it has also been required to cooperate with exposure equipment in coating and imaging equipment. The processing capacity of the production capacity of the optical device, but due to the transportation of the wafer W in the unit for forming the photoresist and the unit for forming the anti-reflection film in the processing before the exposure, and the development of the processing after the exposure The transfer of the wafer W in the unit used is performed by a common transfer system, so there is a problem that it is difficult to increase productivity.

Therefore, the inventors reviewed that the area for storing the modules before the exposure process and the area for storing the modules after the exposure process are arranged up and down, and conveying means are installed in each area, thereby reducing the load of the conveying means and improving the conveying efficiency. , Thereby improving the production capacity of the coating and developing device. In this way, the configuration in which the area where the coating process is performed and the area where the development process is performed are arranged above and below, and the conveying means is provided in each area is described in Patent Document 2.

At this time, for the multi-layered system in which the coating processing area and the development processing area are formed in different layers, the simplification of the structure is achieved by reducing the transportation system, and the transportation process is simplified. The system is reviewed, but there is no disclosure in Patent Document 2 about these points.

[Patent Document 1] Unexamined Patent Publication No. 2004-193597 [Patent Document 2] Patent No. 3337677

<p>The present invention was developed in view of such circumstances, and its purpose is to provide a technology that can save space when forming anti-reflection films on the upper and lower sides of the photoresist film. Also, another purpose is to provide a In the case of cloth or non-reflection coating, it is possible to realize the technology of simplification of software.</p>

<p>In response to this, the coating developing device of the present invention transfers the substrate carried into the carrier block by the carrier to the processing block. After the coating film containing the photoresist film is formed in the processing block, it passes through The interface block is transported to the exposure device, and the exposed substrate returned through the interface block is developed and processed in the processing block, and then transferred to the carrier block; its characteristics are: a) the processing block It is provided with: a plurality of unit blocks for forming a coating film stacked on each other, and a unit block for development processing stacked on the unit blocks for forming a coating film; b) a plurality of stacked coating film The unit blocks for forming the cloth film are the unit blocks for coating the photoresist liquid on the substrate and the unit blocks for coating the anti-reflection film on the substrate; c) each of the above unit blocks It is equipped with: a liquid processing unit for applying a chemical liquid on a substrate, a heating unit for heating the substrate, and a transport means for unit blocks that transport the substrate between these units; d) each of the above unit blocks has: It is installed on the side of the carrier block, and is formed by stacking transfer platforms for transferring substrates to and from the conveying means of each unit block, and a transfer platform group for transferring substrates between the transfer platforms Substrate transfer means.</p><p>Here, each of the above unit blocks may also be equipped with a cooling unit for cooling the substrate. Yuan. In this case, the substrate on which the coating film is formed in the unit block for forming the coating film is transferred to the unit block for the development process by the substrate transfer means, and the unit block for the development process is transported Means to transport to the interface block.</p><p>In addition, the transfer platform group can also be arranged on the side of the interface block. In this case, the substrate carried into the carrier block by the carrier is transferred to the unit block for development processing, and then transferred to the coating by the substrate transfer means. Unit block used for fabric film formation.</p><p>Here, the above-mentioned coating and developing device may include: a transfer method (recipe) for specifying the transfer path of the substrate in the unit block for each unit block; and a mode for selecting the mode for transferring the substrate among the mode groups Selection means; this mode group includes: the mode of conveying the substrate in all the unit blocks; the unit block used to coat the photoresist liquid and the anti-reflection film before coating the photoresist liquid The mode of transporting the substrate in the unit block of the chemical liquid and the unit block for the development process; and the unit block used to coat the photoresist liquid and after the photoresist liquid is coated to prevent reflection The mode of transporting the substrate in the unit block of the membrane chemical liquid and the unit block for the development process; the unit block to transport the substrate is selected by the mode selection means, and the transport used in the selected unit block is selected Method to deal with.</p><p>In addition, the above-mentioned coating and developing device preferably has a transfer platform group, which is installed in each unit block, and transfers the conveying means of each unit block. If the transfer platform for the transfer of the row substrates is laminated, the substrate transfer means can perform the transfer of the substrates between the transfer platforms. At this moment, the above-mentioned transfer platform group can be arranged on the side of the carrier block. The transfer platform group may include a transfer platform for the carrier block for transferring substrates between the carrier block and the processing block, or the transfer platform The group is arranged on the side of the interface block, and the transfer platform group may include a transfer platform for the interface block for transferring the substrate between the interface block and the processing block.</p><p>Here, it is preferable that the liquid processing unit installed in the unit block for forming the coating film includes: a plurality of substrate holding portions arranged in a horizontal direction in order to respectively hold a plurality of substrates, which are installed in a common processing container; And a common chemical liquid nozzle for applying chemical liquid to the substrates held in the plurality of substrate holding parts is provided in the above-mentioned processing container.</p><p>In addition, an auxiliary block can be set between the processing block and the interface block. The auxiliary block is provided with one of the coating film formation before the exposure process and/or after the exposure process before the development process and after the development process. Any processing unit.</p><p>In this case, the unit provided in the above-mentioned auxiliary block can be a film thickness inspection unit for inspecting the state of the wafer surface, that is, for inspecting the film thickness of the coating film formed on the substrate, and for cleaning before exposure And/or the cleaning unit of the exposed substrate, the defocus inspection device to detect the positional deviation of the pattern generated in the exposure device, and the uneven coating inspection to detect the uneven coating of the photoresist liquid Detection device, defective development detection device to detect defects in the development process, particle number detection to detect the number of particles attached to the substrate Device, comet-shaped detection device for detecting comet-shaped substrates after photoresist coating, stain detection device, defect detection device for detecting defects on the substrate surface, for detecting A scum detection device for photoresist residue remaining on a substrate after development processing, a defect detection device for detecting defects in photoresist coating processing and/or development At least one of the line width measuring device for the line width of the photoresist film on the substrate, the overlap inspection device for inspecting the overlap accuracy of the exposed substrate and the photomask, or when the exposure device is used to form a liquid layer on the surface of the substrate When performing liquid immersion exposure, the unit provided in the auxiliary block may be a cleaning unit that cleans the substrate after the liquid immersion exposure. In addition, it is preferable that the arrangement layout of the liquid processing unit, the heating unit, the cooling unit, and the conveying means are the same among the plurality of unit blocks for forming the coating film stacked on each other.</p><p>The exposure device may be a liquid immersion exposure using a liquid layer formed on the surface of a substrate, and a protective film coating unit for forming a water-repellent protective film on the photoresist film and/or a protective film A protective film removal unit for removing the above-mentioned water-repellent protective film. In addition, the protective film removal unit may be installed in a unit block for development processing. In addition, the above-mentioned exposure device may be a liquid immersion exposure using a liquid layer formed on the surface of the substrate, and a cleaning unit for cleaning the substrate after the above-mentioned liquid immersion exposure may be installed in the interface block. In addition, the unit blocks for forming the coating film may be stacked on the plurality of unit blocks for forming the coating film stacked on each other. The substrate of the resist film forms a water-repellent protective film on the photoresist film.</p><p>In addition, a temperature control unit may be provided in the transfer platform group for transferring substrates between the conveying means of each unit block. The temperature control unit is used to mount the substrate before the coating film is formed, and the substrate The temperature is adjusted to perform the treatment of applying the chemical solution for forming the coating film. Here, the temperature control unit may include a first temperature control plate that is placed on the substrate heated by the heating unit and roughly adjusts the temperature of the substrate to the first temperature, and a second temperature control that adjusts the temperature more precisely plate.</p><p>The coating development method implemented in such a coating development device includes the process of forming an anti-reflection film on the substrate in the unit block for coating film formation; The unit block of film formation is the process of coating the photoresist liquid on the anti-reflection film formed on the surface of the substrate for the unit block for the formation of the coating film of different layers; The unit block for preventing the formation of the film and the unit block for coating the photoresist liquid are formed on the photoresist liquid coated on the surface of the above-mentioned substrate. The process of anti-reflection film; and secondly, the unit block for the development process provided on a layer different from the unit block for forming the plurality of coating films, after the exposure of the photoresist film formed above The process of developing and processing the substrate.</p><p>In addition, the characteristics of the applied coating development method include: a mode of transporting the substrate to all the unit blocks for coating film formation, and the unit block for coating the photoresist liquid on the substrate and the Photoresist The unit block for applying the chemical solution for the anti-reflection film before the agent solution to convey the substrate, and the unit block for coating the photoresist solution on the substrate, and the unit block for coating the reflection after the photoresist solution is applied The process of selecting the mode between the unit blocks of the chemical liquid used to prevent the film from transporting the substrate; secondly, according to the selected mode, the substrate is sequentially transported to the unit block used for coating film formation, and the substrate is formed The process of coating film; and then the unit block for development processing that is provided in a layer different from the unit block for forming the plurality of coating films, to the exposed substrate on which the coating film is formed Carrying out the project of development processing.</p>

<p>As described above, in the present invention, since a plurality of unit blocks for forming a coating film are stacked on top of each other for coating the photoresist liquid on the substrate, and for coating the antireflection film on the substrate Therefore, even when the anti-reflection film is formed on the top and bottom of the photoresist film, the area occupied by the processing block can be reduced and space saving can be achieved.</p><p>In addition, by selecting the unit block for forming the coating film to be used, it can be applied to either when the antireflection film is applied or when it is not applied. At this moment, since the substrates in the unit block have the same transport path, even when a different coating film is formed with one coating and developing device, the complexity of the transport procedure can be suppressed and the software can be simplified. .</p><p>In addition, since a dedicated substrate transfer means that can be accessed from all unit blocks is provided, the substrate transfer means can be used to transfer substrates to unit blocks of different layers. Therefore, the degree of freedom of substrate transfer to each layer will increase. seek Seeking to simplify the system structure, and easily achieve the simplification of the transport program.</p><p>In addition, according to other inventions of the present invention, a plurality of coating parts for coating a chemical solution on a substrate can be housed in a common processing container. Therefore, the processing environment can be made the same, and a temperature control system or a chemical can be achieved. Common use of liquid supply nozzles, etc.</p>

Hereinafter, the first embodiment of the coating and developing device of the present invention will be described. Fig. 1 is a plan view showing an embodiment when the coating and developing device of the present invention is applied to a photoresist pattern forming device. Fig. 2 is a schematic perspective view of the same, and Fig. 3 is a schematic side view of the same. This device is provided with: a carrier block S1 for carrying in and out a carrier 20 that contains, for example, 13 substrates (wafer W), and a plurality of (for example, 5) unit blocks B1 to B5 are arranged vertically. The processing block S2 and the interface block S3, and the exposure device S4.

The carrier block S1 is provided with a mounting table 21 on which a plurality of the carriers 20 can be placed, an opening/closing section 22 provided on the front wall surface as seen from the mounting table 21, and an opening/closing section 22 for receiving the carrier through the opening/closing section 22. 20 A transfer arm C for taking out the wafer W. This transfer arm C is configured to be free to advance and retreat, free to rise and fall, free to rotate around the vertical axis, and to move freely in the arrangement direction of the carrier 20, so that it can be crystallized between the transfer platforms TRS1 and TRS2 of the unit blocks B1 and B2 described later. The transfer of circle W.

A processing block S2 surrounded by a housing 24 is connected to the back of the carrier block S1. For this example, the processing block S2 is allocated from the bottom side There are: the first and second unit blocks (DEV layer) B1 and B2 for the development of the two stages below, and the anti-reflection film (hereinafter referred to as The third unit block (TCT layer) B3 for forming the "first anti-reflection film"), and the fourth unit block (COT layer) B4 for the photoresist liquid coating process, and the supply The fifth unit block (BCT layer) B5 for forming the anti-reflection film (hereinafter referred to as the "second anti-reflection film") formed on the lower layer side of the photoresist film. Here, the aforementioned DEV layers B1 and B2 correspond to unit blocks for development processing, and the TCT layer B3, COT layer B4, and BCT layer B5 correspond to unit blocks for coating film formation.

Next, the structure of the first to fifth unit blocks B (B1 to B5) will be explained. The unit blocks B1 to B5 are provided with: a liquid processing unit for coating the wafer W with a chemical liquid, and various heating for pre-processing and post-processing performed by the liquid processing unit. The processing unit of the cooling system, and the liquid processing unit and heating provided in the above. The main arms A1 to A5 of the dedicated conveying means for transferring wafers W between the processing units of the cooling system.

These unit blocks B1~B5, in this case, between each unit block B1~B5, the above-mentioned liquid treatment unit, heating. The layout of the cooling system's processing units and conveying means will be formed in the same way. The same layout here means the center of the wafer W placed in each processing unit, that is, the center of the spin chuck described later in the liquid processing unit, the heating plate or cooling of the heating unit or the cooling unit The centers of the plates are the same.

First, since the DEV layers B1 and B2 have the same configuration, the DEV layer B1 shown in FIG. 1 will be used as an example for description. In this DEV layer B1 A transfer area R1 for connecting the carrier block S1 and the wafer W of the interface block S3 in the longitudinal direction of the DEV layer B1 (the Y-axis direction in the figure) is formed in the center.

On the two sides viewed from the carrier block S1 side of the transport area R1, from the front side (carrier block S1 side) to the back, a development with a plurality of development processing units for development processing is provided on the right side The unit 31 serves as the above-mentioned liquid treatment unit. Each unit block is from the front side to the back, and the heating is set in turn on the left side. The cooling system unit is multi-staged, for example, 4 scaffold units U1, U2, U3, U4. In this figure, there are various units that will be used to perform pre-processing and post-processing of the processing performed in the imaging unit 31 A plurality of stages are formed, for example, 2 stages are stacked on each other. In this way, the transfer area R1 is divided. For example, clean air is sprayed in the transfer area R1 and then exhausted, thereby suppressing the floating of particles in the area.

Among the various units used to perform the above-mentioned pre-processing and post-processing, as shown in FIG. 4, for example, there is a heating unit (PEB1) called a post-exposure bake unit, etc., which heat-processes the exposed wafer W. Here After the heating unit (PEB1) is processed, the cooling unit (COL1) is used to adjust the wafer W to a predetermined temperature, and the heat treatment is called the post-baking unit to disperse the moisture of the wafer W after the development process. And other heating units (POST1). The processing units such as the heating unit (PEB1, POST1) or cooling unit (COL1) are respectively housed in the processing container 51, and the shelf units U1 to U4 are constructed by stacking each of the processing containers 51 in two stages. The surface of the transport area R1 of the processing container 51 is formed with a wafer carry-out entrance 52.

The main arm A1 is provided in the transport area R1. The main arm A1 can be used in all modules (where the wafer W is placed) in the DEV layer B1, such as the processing units of the scaffolding units U1 to U4, the imaging unit 31, the scaffolding unit U5 and the shelf described later. The wafers are transferred between the various parts of the rack unit U6. In response to this, it is configured to be free to advance and retreat, free to rise and fall, free to rotate around the vertical axis, and free to move in the Y-axis direction.

In addition, the area adjacent to the carrier block S1 of the transfer area R1 forms the first wafer transfer area R2. In this area R2, as shown in FIGS. 1 and 3, the transfer arm C and the main arm A1 can enter and exit A scaffold unit U5 is provided at the position of, and a transfer arm D used as a substrate transfer means for transferring the wafer W to the scaffold unit U5 is provided.

The above-mentioned shelf unit U5, as shown in Fig. 3, is capable of transferring wafer W between the main arms A1~A5 of each unit block B1~B5. In this example, each unit block B1~B5 is Each has one or more, for example, two transfer platforms TRS1 to TRS5, thereby forming a transfer platform group of multi-stage stacked transfer platforms. In addition, the transfer arm D is configured to be free to advance and retreat and to move up and down so as to be able to transfer the wafer W to the transfer platforms TRS1 to TRS5. In addition, the transfer platforms TRS1 and TRS2 of the DEV layers B1 and B2, in this example, are configured to be able to transfer the wafer W to the transfer arm C to form a transfer platform for carrier blocks.

Also, in this example, the second unit block B2 has two transfer platforms TRS-F, and this transfer platform TRS-F is used as a dedicated transfer platform for transferring the wafer W into the processing block S2 by the transfer arm C use. This transfer platform TRS-F is also equivalent to the transfer platform for carrier blocks, which can be set in the first For unit block B1, or if the transfer platform TRS-F is not separately provided, when the transfer arm C carries the wafer W into the processing block S2, the transfer platform TRS1, 2 is used.

Moreover, in the area adjacent to the transport area R1 and the interface block S3, as shown in Figs. 1 and 3, a scaffold unit U6 is provided at a position where the main arms A1, A2 of the DEV layer B1, B2 can enter and exit. This shelf unit U6, as shown in FIGS. 3 and 6, is capable of transferring wafer W between the main arms A1, A2 of each DEV layer B1, B2. In this example, each DEV layer B1, B2 It is equipped with one or more, for example, two transfer platforms TRS6, TRS7.

Next, briefly explain the other unit blocks B. The DEV layer B2 has the same structure as the DEV layer B1, that is, it has a display unit 31, a heating unit (PEB2, POST2), and a cooling unit (COL2), respectively, by the main arm A2. The transfer platform TRS2 of the scaffold unit U5, the transfer platform TRS7 of the scaffold unit U6, the display unit 31, and the processing units of the scaffold units U1 to U4 are performed to transfer the wafer W.

In addition, the unit blocks B3 to B5 for forming the coating film are all of the same structure, except that they do not have a transport area connecting the carrier block S1 and the interface block S2, and the rest are the same as those used for the development process described above. The unit blocks B1 and B2 are also constructed. Specifically, if the COT layer B4 is taken as an example and briefly described with reference to FIGS. 5, 7 and 8, the liquid processing unit is a coating unit provided with a photoresist liquid coating process on the wafer W 32. The shelf units U1~U4 on the COT layer B4 are equipped with: a cooling unit (COL4) for adjusting the wafer W to a predetermined temperature before coating the photoresist liquid, and a heat treatment after coating the photoresist liquid Wafer W heating unit (CHP4), The hydrophobic treatment unit (ADH) and peripheral exposure device (WEE) used to improve the adhesion between the photoresist liquid and the wafer W. Except for the point where the shelf unit U6 is not provided, the rest are the same as the DEV layer B1, B2 constitute. In addition, the COT layer B4 here uses the main arm A4 to transfer the wafer W to each processing unit of the transfer platform TRS4 of the shelf unit U5, the coating unit 32, and the shelf units U1 to U4. In addition, the above-mentioned hydrophobization treatment unit is one that performs gas treatment in an HMDS environment, but it only needs to be installed in any of the unit blocks B3 to B5 for coating film formation.

In addition, the TCT layer B3 has the same configuration as the COT layer B4, that is, the liquid processing unit is provided with a first anti-reflection film forming unit 33 for forming a first anti-reflection film on the wafer W. The shelf unit U1 ~U4 is equipped with: cooling unit (COL3) for adjusting wafer W to a predetermined temperature before antireflection film formation processing, heating unit (CHP3) for heating wafer W after antireflection film formation processing, and others It has the same structure as the COT layer B4. In the TCT layer B3, the main arm A3 is used to transfer the wafer W to the transfer platform TRS3 of the shelf unit U5, the first anti-reflection film forming unit 33, and the shelf units U1 to U4.

In addition, the BCT layer B5 is provided with a second anti-reflection film forming unit 34 for forming a second anti-reflection film on the wafer W except for the liquid processing unit. The shelf units U1 to U4 are equipped with: The cooling unit (COL5) that adjusts the wafer W to a predetermined temperature before the prevention film formation process, the heating unit (CHP5) of the wafer W after the heat treatment antireflection film formation process, the peripheral exposure device (WEE), and the COT layer B4 The same composition. Furthermore, in the fifth unit block B5, the main arm A5 is used to perform wafer W on the transfer platform TRS5 of the shelf unit U5, the second anti-reflection film forming unit 34, and the shelf units U1 to U4. Handover.

Here, the heating unit (CHP3~5, POST1,2, PEB1,2), as shown in Figure 1, is equipped with a heating plate 53, and a cooling plate 54 that also serves as a transport arm. The cooling plate 54 performs the main arm A1 and The wafer W between the heating plates 53 is transferred, that is, a device capable of heating and cooling in one unit is used. The cooling units (COL1 to 5) are, for example, devices using a cooling plate equipped with a water-cooling method. Here, the cooling plate 54 of the heating unit (CHP3 to 5, POST1,2, PEB1,2) is equivalent to the cooling unit of the present invention.

In addition, FIG. 5 shows an example of the layout of these processing units. This layout is an expedient. The processing units are not limited to heating units (CHP, PEB, POST), cooling units (COL), hydrophobization treatment devices (ADH), and peripherals. The exposure device (WEE) can also be equipped with other processing units, or the number of units to be installed can be determined by considering the processing time of each processing unit in the actual device.

On the other hand, behind the shelf unit U6 of the processing block S2, the exposure device S4 is connected via the interface block S3. The interface block S3 is provided with an interface arm B for transferring the wafer W to each part of the shelf unit U6 of the DEV layer B1 and B2 of the processing block S2 and the exposure device S4. This interface arm B is a means for transporting the wafer W interposed between the processing block S2 and the exposure device S4. The transfer platforms TRS6 and TRS7 of the layers B1 and B2 perform the transfer of the wafer W to constitute freedom of advance and retreat, freedom of elevation, and freedom of rotation around the vertical axis. Here, the aforementioned handover platform is equivalent to the handover platform for interface.

In this way, this embodiment can use the transfer arm D to freely transfer the wafer W between the five-stage stacked unit blocks B1 to B5 via the transfer platforms TRS1 to TRS5 and TRS-F, and The interface arm B can be used to transfer the wafer W between the processing block S2 and the exposure device S4 via the unit blocks B1 and B2 for development processing.

Next, the configuration of the main arm A (A1 to A5), the transfer arm D, the interface arm B, and the liquid treatment unit will be briefly described. First, the main arm A is, for example, as shown in FIG. 4, and has two arms 101, 102 for supporting the peripheral area on the back side of the wafer W. The arms 101, 102 can be moved along the base 103 independently of each other and can be freely moved. . In addition, the base 103 can be freely rotated around the vertical axis by the rotating mechanism 104, and can be moved by the moving mechanism 105 along the surface facing the transport area R1 of the table 106 supporting the shelf units U1 to U4. The mounted Y-axis rail 107 is free to move in the Y-axis direction, and along the lifting rail 108 constitutes lifting freedom. In this way, the arms 101 and 102 are configured to be free to advance and retreat, move in the Y-axis direction, rise and fall, and rotate around the vertical axis. They can be used in each unit of the scaffold unit U1~U6 or the transfer platform TRS1~TRS7, TRS- F. The wafer W is transferred between the liquid processing units. Such a main arm A is driven by a controller (not shown) in accordance with a command from the control unit 6 described later. In addition, in order to prevent the arms from accumulating heat in the heating unit, a program can be used to arbitrarily control the receiving order of the wafer W.

In addition, the aforementioned interface arm B, for example, as shown in FIG. 9, an arm 201 for supporting the center area on the back side of the wafer W is provided along the base 202 so as to be free to advance and retreat. The above-mentioned base 202 is freely rotated around the vertical axis by the rotating mechanism 204 on the lifting platform 203, and is freely lifted and lowered along the lifting rail 205. In this way, the arm 201 is configured to be free to advance and retreat, free to rise and fall, and free to rotate around a vertical axis, so that the wafer W can be transferred between the transfer platforms TRS6 and TRS7 of the shelf unit U6.

The above-mentioned transfer arm D has the same structure as the interface arm B except that it does not rotate around the vertical axis. The transfer arm D and the interface arm B are driven by a controller (not shown) in accordance with a command from the control unit 6 described later.

Next, the liquid processing unit, taking the coating unit 32 as an example, will be briefly described with reference to FIG. 10. In this example, three coating sections 301, 302, and 303 are housed in a common processing container 300, and are arranged in the horizontal direction (Y-axis direction) so that they can face the transport area R1. The base 304.

Since the coating parts 301, 302, and 303 have the same structure, the coating part 301 is taken as an example for description. In the figure, 305 is a rotating chuck that forms the substrate holding part, which can hold the crystal horizontally by vacuum suction. Round W. The rotating chuck 305 can be rotated around the vertical axis by the driving part 306 and can be raised and lowered. In addition, a cup 307 surrounding the wafer W and the side portion of the rotation chuck 305 is provided around the rotating chuck 305, and a drain 308 including an exhaust pipe, a drain pipe, and the like is provided on the bottom surface of the cup 307. In the figure, 309 is supplied at the periphery of the wafer W held by the spin chuck 305 The side flushing mechanism of the flushing liquid is composed of free lifting and rotating around the vertical axis.

In addition, 310 in the figure is a common supply nozzle (chemical solution nozzle) for supplying the coating liquid to the three coating sections 301, 302, and 303. The supply nozzle 310 is moved along the guide rail 311 by the moving mechanism 312 ( The guide rail 311 is provided along the longitudinal direction (Y direction) of the processing container 300), from the outer side of the cup 307 of the coating section 301 at one end to the outer side of the cup 307 of the coating section 303 at the other end. It can move freely and lift freely. Thereby, in this example, the photoresist liquid can be supplied by the supply nozzle 310 to the substantially central area of the wafer W held by the spin chuck 305 of each coating section 301 to 303. In the figure, 313 is the standby area of the supply nozzle 310 provided outside the coating part 303 on the other end side, where dummy dispense or nozzle cleaning is performed.

In the figure, 314 is a filter unit installed on the top of the processing vessel 300, and 315 is an exhaust section provided on the bottom surface of the processing vessel 300. The exhaust section exhausts air with a predetermined amount of exhaust gas, and at the same time, the filter unit 314 By supplying a predetermined flow rate of clean gas whose temperature and humidity are adjusted, a downward flow of clean gas is formed in the processing container 300, and the pressure is set to be more positive than that of the transfer area R1 of the main arm A4. In the figure, 316 is a carry-out entrance for the wafer W formed on the surface facing the transport area R1 of the processing container 300, and an opening and closing shutter (shutter) is provided.

In this coating unit 32, the wafer W is carried into the processing container 300 through the carry-out entrance 316 by the main arm A4, and is transferred to any one of the rotating chucks 305 of the predetermined coating sections 301, 302, and 303. Then, self-confess The nozzle 310 is supplied with the photoresist liquid to the center of the wafer W, and the spin chuck 305 is rotated at the same time, and the photoresist liquid is diffused in the radial direction of the wafer W by centrifugal force to form a surface of the wafer W Liquid film of photoresist. The wafer W on which the photoresist liquid film is formed in this way is carried out to the outside of the coating unit 32 by the main arm A4 through the carry-out entrance 316.

In such a coating unit 32, since the three coating sections 301 to 303 are installed inside the common processing container 300, the processing environment is the same. Therefore, the supply nozzle 310 can be shared, and one supply nozzle 310 can be used to supply the photoresist liquid to the three coating sections 301 to 303. Therefore, it is the same as when the processing container 300 and the supply nozzle 310 are installed in each coating section 301 to 303. In comparison, the total component points or occupied area can be reduced.

In addition, because the processing environment is the same, the means for supplying the air that forms the downflow or exhausting the air can be shared. Therefore, the number of components or the occupied area can be effectively reduced from this point. In addition, because the coating sections 301 to 303 are arranged in a common environment, the photoresist solution can be applied in the same environment frequently in each of the coating sections 301 to 303, and the environment can be more uniformly received. Affect the coating process of photoresist liquid.

In addition, since the three coating sections 301 to 303 will be provided on the common base 304, when adjusting the height of the rotating chuck 305 and the arms 101 and 102 of the main arm A4, only one coating section 301 is required. ~303 can proceed. In addition, because the common supply arm 310 is configured to supply the photoresist liquid to the coating sections 301 to 303, the height adjustment of each rotating chuck 305 and the supply nozzle 310 is also required for one coating section. 301~303 can be carried out. Therefore, it can reduce the height adjustment required It takes time, and the adjustment time will be shortened.

The developing unit 31 has a developing liquid supply area formed in the longitudinal direction of the supply nozzle 310, so that the developing liquid can be supplied in the diameter direction of the wafer W, and is equipped with a cleaning liquid nozzle. The unit 32 is roughly constructed in the same way. The cleaning liquid nozzle has the same structure as the supply nozzle 310, and can be moved freely along the guide rail 311 by a moving mechanism, and can be raised and lowered freely, so that it can be held in each coating section (development processing section) 301 to 303. The wafer W of the rotating chuck 305 is supplied with a cleaning solution.

Such a development unit 31 uses the main arms A1 and A2 to carry the wafer W into the processing container 300 through the carry-out entrance 316, and the wafer W is transferred to the predetermined coating section (development processing section) 301, 302 , 303 any of the rotating chuck 305. Then, the developing liquid is supplied to the center of the wafer W from the supply nozzle 310, and at the same time, the wafer W is half-rotated by the rotating chuck 305, thereby supplying the developing liquid to the entire surface of the wafer W. Then, after a predetermined time has elapsed, the cleaning liquid is supplied from the cleaning liquid nozzle to the wafer W to wash off the developing liquid on the surface of the wafer W, and then the wafer W is rotated and dried, thereby completing the development process.

In addition, in this developing unit 31, instead of separately providing a cleaning liquid nozzle, a cleaning mechanism that can be lifted and lowered freely and rotated around a vertical axis can be provided in the same configuration as the side flushing mechanism 309 of the coating unit 32. Thus, the cleaning liquid can be supplied to the center portion of the wafer W held by the spin chuck 305.

The above-mentioned first anti-reflection film forming unit 33 is used to apply a chemical solution for the anti-reflection film to the wafer W after applying the photoresist solution, and the second anti-reflection film The anti-reflection film forming unit 34 is used to apply a chemical solution for the anti-reflection film to the wafer W before applying the photoresist solution. These units 33 and 34 are used for supplying the anti-reflection film from the supply nozzle 310. Except for the chemical solution, each has the same configuration as the coating unit 32.

Here, the flow direction of the wafer W of the photoresist pattern forming apparatus will be explained by taking the case where the anti-reflection film is formed on the upper and lower sides of the photoresist film as an example. First, the carrier 20 is carried into the carrier block S1 from the outside, and the wafer W is taken out from the carrier 20 by the transfer arm C. The wafer W is transferred to the transfer platform TRS-F of the DEV layer B2 by the transfer arm C. The wafer W of the transfer platform TRS-F is transferred to the shed by the transfer arm D in order to transfer the wafer W on the BCT layer B5. The transfer platform TRS5 of the rack unit U5 is transferred to the main arm A5 of the BCT layer B5 via this platform TRS5.

Then, the BCT layer B5 is transported by the main arm A5 in the order of the cooling unit (COL5) the second anti-reflection film forming unit 34 the heating unit (CHP5) the transfer platform TRS5 of the shelf unit U5 to form The second anti-reflection film.

Then, the wafer W of the transfer platform TRS5 is transferred to the transfer platform TRS4 in order to transfer the wafer W to the COT layer B4 by the transfer arm D, and then transferred to the main arm A4 of the COT layer B4. Then on the COT layer B4, by the main arm A4, it is transported in the order of the hydrophobization treatment unit (ADH)cooling unit COL4coating unit 32heating unit CHP4the transfer platform TRS4 of the shelf unit U5. 2 A photoresist film is formed on the upper layer of the anti-reflection film.

Secondly, the wafer W of the transfer platform TRS4 is used in order to use the transfer arm D The wafer W is transferred to the TCT layer B3, and then transferred to the transfer platform TRS3, and transferred to the main arm A3 of the TCT layer B3. Then, on the TCT layer B3, with the main arm A3, the cooling unit (COL3) the first anti-reflection film forming unit 33 the heating unit (CHP3) the peripheral exposure device (WEE) the transfer platform TRS3 of the shelf unit U5 It is conveyed in the order of the above, and a first anti-reflection film is formed on the upper layer of the photoresist film.

Then, the wafer W of the transfer platform TRS3 will be transferred to the transfer platform TRS1 (or TRS2) of the shelf unit U5 by the transfer arm D, and then by the main arm A1 (or main arm A1 (or main arm) of the DEV layer B1 (or DEV layer B2) The arm A2) is transported to the transfer platform TRS6 (or transfer platform TRS7) of the shelf unit U6 of the DEV layer B1 (or DEV layer B2). Secondly, the wafer W on the transfer platform TRS6 (or the transfer platform TRS7) is transferred to the exposure device S4 by the interface arm B, where a predetermined exposure process is performed.

The exposed wafer W is transferred to the transfer platform TRS6 (or TRS7) of the shelf unit U6 in order to transfer the wafer W to the DEV layer B1 (or DEV layer B2) through the interface arm B, and this platform TRS6 (or TRS7) The wafer W on TRS7) will be accepted by the main arm A1 (or main arm A2) of the DEV layer B1 (or the DEV layer B2). In the DEV layer B1 (B2), the heating unit (PEB1(PEB2)) Cooling unit (CPL1 (CPL2)) Developing unit 31 Heating unit (POST1 (POST2)) to carry out the predetermined development process. The wafer W subjected to the development process in this way is transferred to the transfer platform TRS1 (TRS2) of the shelf unit U5 in order to transfer the wafer W to the transfer arm C, and the transfer arm C returns to the carrier block S1. Original carrier 20.

As mentioned above, the above-mentioned coating and developing device is provided with a control unit 6 constituted by a computer, which is responsible for the method management of each processing unit, the method management of the transfer flow (transport path) of the wafer W, the processing of each processing unit, Or the drive control of the main arms A1 to A5, the transfer arm C, the transfer arm D, and the interface arm B, whereby the control unit 6 uses the unit blocks B1 to B5 to transport the substrates for processing.

The method of the above-mentioned transfer process is to specify the transfer path (the order of transfer) of the wafer W in the unit block, and create it in accordance with the type of coating film formed in each unit block B1~B5. In each unit block B1~B5, a plurality of transport flow methods are stored in the control unit 6.

In addition, depending on the coating film formed, there are forms in which the wafer W is transported to the entire unit block B1 to B5, and the wafer W is transported to the unit block (DEV layer B1, B2) for development processing, and In the form of a unit block (COT layer B4) for applying photoresist liquid and a unit block (BCT layer B5) for forming the second anti-reflection film, the wafer W is transported to the unit for development processing The block (DEV layer B1, B2) and the unit block (COT layer B4) for coating the photoresist liquid and the unit block (TCT layer B3) for forming the first anti-reflection film, and only The format of the wafer W to be transported to the unit block (DEV layer B1, B2) for development processing is selected by the format selection means of the control unit 6 according to the type of coating film to be formed. At the same time as the unit block, the most suitable method is selected by a plurality of transportation process methods prepared for each unit block selected, so that the unit block used corresponding to the formed coating film will be selected. In this unit block, the drive of each processing unit or arm will be controlled , Which enables a series of processing.

Since such a coating and developing device sets the unit blocks for the formation of the coating film and the unit blocks for the development processing in different areas, and each dedicated main arm A is installed, the main arm A The load will be reduced. Therefore, the conveying efficiency of the main arm A is improved, and as a result, the production capacity can be improved.

In addition, since the unit blocks for coating film formation are stacked on top of each other to form a dedicated unit block (COT layer B4) for forming a photoresist film, and a dedicated unit block for forming the first anti-reflection film (TCT layer) B3). A dedicated unit block (BCT layer B5) for forming the second anti-reflection film. Therefore, even when the anti-reflection film is formed on the top and bottom of the photoresist film, the area occupied by the processing block S2 can be made smaller than that The photoresist film is the same, and space saving can be achieved.

In addition, since the unit blocks for coating film formation are composed of the COT layer B4, the TCT layer B3, and the BCT layer B5 as individual unit blocks as described above, by selecting the DEV layer B1, B2 (or the DEV layer B1 , Any one of B2), the unit blocks used in the TCT layer B3, the COT layer B4, and the BCT layer B5 can correspond to any case where the anti-reflection film is formed or not. In addition, since the transport path of the wafer W in the unit block used at this moment is the same, even if one coating and developing device is used to form different coating films in each batch, the complexity of the transport process can be suppressed. Become a simple transport program, and seek simplification of software.

At this moment, which unit block B1~B5 should be used for processing, as described above, are the unit blocks stored in the transfer destination of the wafer W of the control section 6 by the coating film corresponding to the purpose, and each unit Block wafer The W transport process method depends on the unit block of the wafer to be transported and the transport process method.

That is, for example, in the process of not forming the anti-reflection film, only the DEV layer B1 (B2) and the COT layer B4 are selected. In this case, for example, the carrier 20 the transfer arm C the transfer platform TRS-F of the shelf unit U5 Transfer arm Dtransfer platform TRS4COT layer B4 main arm A4hydrophobic treatment unit (ADH)cooling unit (COL4)coating unit 32heating unit (CHP4)peripheral exposure device (WEE)shelf Transfer platform TRS4 of unit U5 transfer arm D transfer platform TRS1 (TRS2) of scaffold unit U5 main arm A1 (A2) of DEV layer B1 (DEV layer B2) transfer platform TRS6 (TRS7) of scaffold unit U6 Interface arm B Exposure device S4 Interface arm B Transfer platform TRS6 (TRS7) of shelf unit U6 DEV layer B1 (B2).

In addition, when the anti-reflection film is formed only on the lower part of the photoresist film, only the DEV layer B1 (B2), the BCT layer B5, and the COT layer B4 are selected. In this case, for example, the carrier 20 the transport arm C the shelf unit U5 Transfer platform TRS-F transfer arm D transfer platform TRS5 of shelf unit U5 main arm A5 of BCT layer B5 cooling unit (COL5) second anti-reflection film forming unit 34 heating unit (CHP5) transfer platform TRS5 transfer arm D transfer platform TRS4 main arm A4 of COT layer B4 hydrophobization treatment unit (ADH) cooling unit (COL4) coating unit 32 heating unit (CHP4) peripheral exposure device (WEE) Transfer platform TRS4 of scaffold unit U5 transfer arm D transfer platform TRS1 (TRS2) of scaffold unit U5 main arm A1 (A2) of DEV layer B1 (B2) scaffold unit U6 transfer platform TRS6 (TRS7) interface arm B exposure device S4 interface arm B shelf unit U6 transfer platform TRS6 (TRS7) DEV layer B1 (B2) path.

In addition, when the anti-reflection film is formed only on the upper part of the photoresist film, only the DEV layer B1 (B2), the COT layer B4, and the TCT layer B3 are selected. In this case, for example, the carrier 20 the transport arm C the shelf unit U5 Transfer platform TRS-F transfer arm D transfer platform TRS4 of scaffold unit U5 main arm A4 of COT layer B4 hydrophobization treatment unit (ADH) cooling unit (COL4) coating unit 32 heating unit (CHP4) )transfer platform TRS4 of scaffold unit U5transfer arm Dtransfer platform TRS3 of scaffold unit U5main arm A3 of TCT layer B3cooling unit (COL3)first anti-reflection film forming unit 33heating unit ( CHP3) peripheral exposure device (WEE) transfer platform TRS3 of scaffold unit U5 transfer arm D transfer platform TRS1 (TRS2) of scaffold unit U5 main arm A1 (A2) of DEV layer B1 (B2) shed Transfer platform TRS6 (TRS7) of shelf unit U6 interface arm B exposure device S4 interface arm B transfer platform TRS6 (TRS7) of shelf unit U6 DEV layer B1 (B2).

Since the transport path of the wafer W in the unit blocks (COT layer B4, BCT layer B5, and TCT layer B3) for coating film formation selected in this way is the same, even when different coating films are formed, Just select the used unit block and transfer the wafer W to the unit block, and the transfer procedure is simple.

Moreover, in the above-mentioned embodiment, the above-mentioned carrier block S1 is connected to the interface The transfer area R1 of the wafer W between the block S3 is formed only in the unit blocks B1 and B2 for the development process, and is formed in the unit blocks B3~B5 for the coating film formation and the development process. A dedicated transfer arm D for transferring the wafer W is installed between the unit blocks B1 and B2, so that the wafer W after the coating film is formed can be transported to the unit blocks B1, B2 for development processing The interface block is S3, so there is less transportation system.

In addition, since the transfer of the wafer W between the processing block S2 and the interface block S3 is performed only through the transfer platforms TRS6 and TRS7 of the shelf unit U6, the in and out range of the interface arm B is narrow, and the movement of the arm B Since the range is narrow, the conveyance control of the arm B is easy. Since such a transport system or device has a simple structure for entering and exiting, it also has the advantage of easy control of the transport means.

Here, since the unit blocks for forming the coating film are only different in the type of chemical liquid from the liquid treatment unit, they can be approached to the pipes of the chemical liquid piping, the drain path, the exhaust path, etc., which concentrate the coating liquid, etc. In addition, the cables of the electrical system can also be close together, and the winding of the above-mentioned piping or cables is simplified, and the assembly work is easy. Therefore, the time required for manufacturing is shortened, and the manufacturing capacity is high, so the manufacturing cost can be reduced.

In addition, as mentioned above, the TCT layer B3, COT layer B4, and BCT layer B5 are formed by the same unit block, that is, the liquid processing unit, heating unit, and cooling unit are formed in the same way as the unit blocks are formed. , The layout of the main arm, as long as the type of liquid treatment unit is changed, the same unit block can be manufactured. Therefore, compared with manufacturing unit blocks with different configurations, the manufacturing operation is easier and the manufacturing errors will be reduced. . Thus, the manufacturing capacity High, which can reduce manufacturing costs. Moreover, since a common member can be used, this point can also contribute to the reduction of manufacturing cost. In addition, if the TCT layer B3, COT layer B4, and BCT layer B5 are each constituted by the same unit block, manufacturing errors will be reduced as described above, so the accuracy will be higher and the adjustment will be easy. Therefore, there is an advantage that the time required for adjustment is shortened.

In addition, even if any of the unit blocks for forming the coating film is abnormal and cannot be used, the unit block may not be used, and the remaining two unit blocks for forming the coating film can be used for coating. The formation of cloth film.

Next, the second embodiment of the present invention will be described based on FIG. 11. In this example, the exposure device S4 is used to form a liquid layer on the surface of the wafer W to perform liquid immersion exposure. At the same time, an auxiliary block S5 is provided between the processing block S2 and the interface block S3, and is used for coating film formation. The unit block of is, for example, a unit block (not shown) in which a unit having a protective film for forming a water-repellent film on the second anti-reflection film or the photoresist film is stacked on the upper side of the BCT layer B5. . The so-called unit for forming the above-mentioned water-repellent protective film is the liquid processing unit required for the liquid immersion exposure, that is, the protective film that is coated to prevent the liquid from being impregnated into the photoresist during the liquid immersion exposure. A water-based protective film coating unit, and a cleaning unit for removing the protective film after exposure, or particles attached to the wafer W before and after exposure, or cleaning and removing components that hinder exposure can also be provided in the unit block .

The auxiliary block S5 includes, for example, an inspection unit 71 for performing inspections after coating film formation before exposure processing, or for performing inspections after exposure processing before development processing, or after development processing, and performing liquid immersion The cleaning unit 72 of the cleaning process after exposure is set in multiple stages to be used in the interface block The scaffold unit U7 of the transfer platform for transferring wafers W between the interface arms B of S3, and the scaffold unit U6 for processing block S2, for example, the transfer platform TRS6, TRS7, inspection unit 71, cleaning unit 72. Transfer means E for transferring wafer W to each part of the shelf unit U7. These inspection units 71 or washing units 72 can be constructed in multiple stages, or only washing units 72 or inspection units 71 are provided on both sides of the transfer means E, and the arrangement is free.

The above-mentioned handover means E is configured to be free to advance and retreat, free to rise and fall, and free to rotate around a vertical axis. The inspection is performed after the formation of the coating film and before the exposure treatment. There are coating film thickness inspections or foreign matter inspections, etc., after the exposure treatment The inspections performed before the development process include exposure overlap inspections, etc. Moreover, it is not limited to this, and a unit that detects the alignment mark on the substrate or a unit that partially removes the film by laser processing can also be provided.

In addition, the unit provided in the auxiliary block is used for inspecting the state of the wafer surface, for example, a film thickness inspection unit for inspecting the film thickness of the coating film formed on the wafer W, and a film thickness inspection unit for detecting the photoresist liquid. Uneven coating detection device, cleaning unit to clean the substrate before and/or after exposure, defocus inspection device to detect the positional deviation of the pattern generated in the exposure device , Development failure detection device to detect defects in the development process, particle count detection device to detect the number of particles attached to the wafer W, to detect the crystal after photoresist coating The comet-shaped comet-shaped detection device on the surface of the circle W caused by bubbles or foreign objects in the photoresist liquid, detects the stains on the wafer W after the solvent of the photoresist liquid flying off the surface of the wafer W and then adheres to the wafer W A stain detection device, a common defect detection device that detects common defects that appear in the same shape on the same place on the surface of the wafer W, A scum detection device that detects residual photoresist residues on the wafer W after development processing, NO RESIST, NO to detect defects that have not been subjected to photoresist coating processing and/or development processing DEVELOP inspection device (defect detection device), line width measuring device to measure the line width of the photoresist film formed on the wafer W, and the overlap accuracy of the wafer W and the photomask to be exposed to the exposure device At least one of the overlap inspection devices to be inspected in comparison with the specification value.

The above-mentioned defocus inspection is to detect the focus of the exposure device by comparing with the correct pattern registered in advance. The so-called line width measuring device detects the exposure of the exposure device by comparing with the correct pattern registered in advance. Or whether the exposure time is correct, the so-called overlap inspection device is, for example, the pattern of a specific part that can be compared with the pattern of the lower layer is compared with the correct pattern registered in advance to detect the positional deviation of the exposure position of the exposure device .

In such a configuration, when the wafer W is subjected to a cleaning process after exposure, for example, as in the first embodiment described above, the wafer W is made of carrier block S1BCT layer B5COT layer B4to form a pad The water-based protective film is transported in the order of the unit blocks, followed by the transfer platform of the scaffold unit U5 the transfer arm D the transfer platform TRS1 (TRS2) of the scaffold unit U5 the main arm A1 (A2) of the DEV layer B1 (B2) ) Transfer platform TRS6 (TRS7) of the scaffold unit U6 Transfer means E of the auxiliary block S5 Transfer platform of the scaffold unit U7 Interface arm B of the interface block S3 Transport through the path of the exposure device S4, after exposure The wafer W is the transfer platform of the interface arm B of the interface block S3 the shelf unit U7 of the auxiliary block S5 transfer Means Ewashing unit 72transfer means Etransfer platform TRS6 (TRS7) of shelf unit U6main arm A1(A2)DEV layer B1(B2).

In addition, when various inspections are performed, predetermined inspections are performed with wafers W drawn out every certain number of wafers. For example, the inspection after coating film formation is performed in the auxiliary block S5 before being transported to the exposure device S4, and the post-exposure inspection is performed on the wafer W returned from the exposure device S4 to the auxiliary block S5. In the case of post-image processing, after the development processing is performed in the processing block S2, the wafer W is transported to the auxiliary block S5 for inspection.

Here, the reason why a water-repellent protective film is formed on the photoresist is to use the protective film to poke off the liquid during liquid immersion exposure so that the liquid is difficult to remain on the surface of the wafer W, for example, it is formed on the surface of the wafer W. The front surface and the peripheral edge of the wafer W are on the back side. In addition, the cleaning process after liquid immersion exposure is to prevent the above-mentioned protective film from peeling off the wafer W and forming particles, and to remove the protective film, for example, it is supplied to the peripheral portion of the surface and the back side of the wafer W for removal. The chemical solution of the protective film removes the protective film, and then a cleaning solution for washing the chemical solution is supplied.

Since this embodiment is provided with an auxiliary block S5 having an inspection unit or a cleaning unit between the processing block S2 and the interface block S3, for example, when the inspection or cleaning is performed after the coating film is formed and before the exposure process, and When inspection or cleaning is performed after the exposure process and before the development process, the above-mentioned inspection or cleaning may be performed in the wafer W channel between the processing block S2 and the interface block S3. Therefore, on the one hand, it is possible to suppress the complication of the transport path of the wafer W, and on the other hand On the one hand, the inspection or cleaning can be performed at an appropriate timing after the coating film is formed or after the exposure process. When such inspection or cleaning is performed, the complication of the transport procedure can still be suppressed. In addition, when the protective film is not provided, the cleaning unit 72 described above is used only to remove the contamination of the wafer W.

Also in this embodiment, when the anti-reflection film is not formed, the above-mentioned protective film may be formed on the photoresist film, or the cleaning treatment may be performed either before or after the exposure treatment, or both before and after the exposure treatment.

As mentioned above, the present invention can also replace the installation of the transfer platform group for transferring wafers between the unit blocks B1, B2 for development processing and the unit blocks B3~B5 for forming coating films. The scaffold unit U5 is provided in the scaffold unit U6, and the transfer arm D is not provided on the side of the scaffold unit U5, but is provided in a position that can enter and exit each part of the scaffold unit U6. In this case, the shelf unit U5 is provided with a carrier block transfer platform for transferring wafers W between the carrier block S1 and the development processing unit blocks B1, B2, and the shelf unit U5 U6 is provided with an interface block transfer platform for transferring the wafer W between the interface block S3 and the unit blocks B1, B2 for development processing.

Then, the wafer W of the DEV layer B1 (B2) that is transferred from the carrier block S1 through the transfer platform of the shelf unit U5 will be transferred to the shelf unit U6 by the main arm A1 (A2) of the DEV layer B1 (B2) The transfer platform of, is transferred to the selected unit block for coating film formation by the transfer arm D. The transfer arm D is used to transfer the wafer W through the transfer platform of the shelf unit U6 between the unit blocks for coating film formation. The wafer W thus formed with the coating film will pass through the transfer platform of the shelf unit U6. It is transported to the transfer platform of the shelf unit U6 of the DEV layer B1 (B2), and is transported to the exposure apparatus S4 by the interface arm B. The exposed wafer W is transported to the DEV layer B1 (B2) via the transfer platform of the shelf unit U6 using the interface arm B.

In this example, the interface arm B can be configured to be able to enter and exit each transfer platform of the shelf unit U6. The wafer W with the coating film formed in the unit block is transferred to the transfer platform of the shelf unit U6 of the unit block, and the wafer W on the transfer platform is received by the interface arm B, and then transferred to the next process .

In this embodiment, since the wafer W between the carrier block S1 and the processing block S2 is transferred only through the transfer platform provided on the DEV layer B1, B2, the transfer arm C of the carrier block S1 enters and exits The range is narrow, and the control of the transfer arm C is easy.

In addition, in the above-mentioned embodiment, although it is explained that the wafer W between the carrier block S1 and the interface block S3 is transported only through the unit blocks B1 and B2 for development processing, it may be only through coating. At least one of the unit blocks B3 to B5 for film formation performs the transfer of the wafer W between the carrier block S1 and the interface block S3.

Specifically, for example, in all unit blocks B3 to B5 for coating film formation, a transfer platform for transferring wafer W between the carrier block S1 and the interface block S3 is provided. The case where the above-mentioned handover platform is not provided in the unit blocks B1 and B2 will be described as an example. In this case, for example, each unit block B1~B5 is adjacent to the carrier block S1. The areas are respectively equipped with transfer platforms, and the transfer arm D is configured to be able to enter and exit each transfer platform. In addition, for example, the unit blocks B3 to B5 for forming each coating film are provided with a transfer platform for carrier blocks and a transfer platform for interface blocks at the same time.

In this example, the wafer W of the carrier block S1 is transferred into the unit block B5 through the transfer platform of the BCT layer B5, and the transfer platform and the transfer arm D are used to transfer the COT layer B4TCT layer B3. , And then through the transfer platform for the interface block of the TCT layer B3, the interface arm B is transported to the exposure device S4 for transport.

On the other hand, the exposed wafer W is transported into the unit blocks B3~B5 through the transfer platform for any one of the unit blocks B3~B5 for forming the coating film, and then the unit blocks B3~B5 are transferred through the transfer platform and the transfer platform. The arm D is transported to the unit blocks B1 and B2 for the development process, where the development process is performed. The developed wafer W is transferred to the transfer platform, and transferred to the carrier transfer platform installed in the coating film formation unit blocks B3~B5 by the transfer arm D, and then transferred to the carrier block S1 .

Here, the interface block transfer platform can be installed in all unit blocks B1~B5. In addition, the transfer platform for the carrier block and the transfer platform for the interface block only need to be installed in at least one of the unit blocks B3 to B5 for forming the coating film, and these can also be installed for different coating film formation. Unit block.

Similarly, in such a configuration, since one transfer arm D is used to transfer the wafer W to all the unit blocks B1 to B5, the transfer system is simple, and because it is only used in the coating film formation unit Block B3~B5 In this case, the carrier block S1 and the interface block S3 are connected, so the in and out range of the transfer arm C or the interface arm B is narrow, and the control of these arms is easy.

Moreover, in this example, the transfer of wafers W between all unit blocks B1 to B5 can also be performed only by the combination of the transfer platform provided on the side of the interface block and the transfer arm that can enter and exit the transfer platform. .

In this case, for example, a transfer platform for a carrier block and a transfer platform for an interface block are respectively provided in the unit blocks B3 to B5 for forming a coating film. Then, the wafer W is transferred from the carrier block S1 to the BCT layer B5, and the wafer W is transferred in the order of the COT layer B4 the TCT layer B3 by the transfer platform and the transfer arm. Then, through the transfer platform for the interface block of the TCT layer B3, the interface arm B is used to transfer the wafer W to the exposure device S4. The exposed wafer W is transferred to the display according to the transfer platform for the interface block of the unit blocks B3~B5 for coating film formation the transfer arm the transfer platform for the unit blocks B1 and B2 for the development process The unit blocks B1 and B2 for processing are developed in the unit blocks B1 and B2. The developed wafer W is transported by the transfer platformtransfer armunit block B3~B5 for coating film formation. After passing through the unit block B3~B5, it passes through the carrier block transfer platform back and forth. Go to carrier block S1.

Here, the interface block transfer platform can also be installed in all unit blocks B1~B5. In addition, the delivery platform for the carrier block and the delivery platform for the interface block only need to be installed in at least one of the unit blocks B3 to B5 for coating film formation, and these can also be installed in different coating film formation applications. Unit block.

In addition, the present invention can also be used only in the unit blocks B1 and B2 for development processing. The wafer W is transported and processed. In addition, the unit block for the development process may be one layer, or the unit blocks for forming the coating film may be arranged in order from the lower side to the upper side so that the BCT layer, the COT layer, and the TCT layer can be formed. In addition, in the present invention, the transfer platform of the scaffold unit U5 through which the transfer arm C can enter and exit is not limited to the DEV layer B1 and the DEV layer B2, as long as the transfer arm C and one or more unit blocks of the stacked unit blocks The wafer W can be transferred in between. In addition, the number of transfer platforms TRS of the scaffold units U5 and U6 installed in each unit block may be one or more, and may have a cooling function.

In addition, in the unit block where the wafer W is transferred between the carrier block S1 and the interface block S3, it can also be provided in addition to the main arm Ai for use between the transfer arm C and the interface arm B, or a shelf A dedicated transport means for transporting the wafer W between the unit U5 and the shelf unit U6. In addition, in the scaffold units U5 and U6, as processing units stacked on the unit blocks B1 to B5 of the processing block S2, inspection units corresponding to the purpose can be provided. For example, instead of the peripheral exposure device (WEE) provided on the COT layer B4 and the TCT layer B3, a film thickness measuring device can be provided, or on the DEV layer B1. B2 Set up pattern overlap inspection or development defect inspection unit after development processing. In addition, the inspection unit may be installed in the unit block. In this case, the inspection unit may be installed on both sides of the conveying path of the main arm A, or a unit block dedicated to the inspection unit may be installed.

In addition, the modules in the DEV layers B1 and B2 can also share the main arm A to transport the wafer W. In addition, the present invention is not limited to semiconductor wafers, but can also be applied to the processing of so-called glass substrates for liquid crystal displays (LCD-based Plate) coating and imaging device for the substrate.

In addition, the photoresist pattern forming apparatus of the present invention may be configured as follows. If Figures 12 to 17 are used to illustrate this embodiment, in this example, a water-repellent protective film is provided in the auxiliary block S5 to prevent the liquid from being immersed in the photoresist during liquid immersion exposure. Coating unit (ITC) (hereinafter referred to as "protective film coating unit (ITC)"), and water-repellent protective film removal unit (ITR) for removing the water-repellent protective film (hereinafter referred to as "protective film removal unit" (ITR)"), and a cleaning unit (RD) for cleaning the wafer W before and after the liquid immersion exposure is provided in the interface block S3.

Here, a brief description of the liquid immersion exposure, the liquid immersion exposure is to form a liquid layer on the surface of the substrate to allow light to pass through the state of exposure, thereby improving the resolution of the exposure for the purpose, such as the use of light through pure water , The wavelength of light in water will be shorter, so the wavelength of 193nm ArF in the water substantially forms a feature of 134nm for exposure.

However, in the liquid immersion exposure, because a liquid layer is formed on the surface of the photoresist, the photoresist will be eluted to the liquid phase side, and this eluted component will remain on the wafer W, or after the exposure process is completed, When the liquid layer formed on the surface of the wafer W is discharged from the wafer W, there is a risk of residual liquid droplets, that is, minute water droplets, on the surface of the wafer. In this way, if the eluted part or droplets of the photoresist remain on the wafer W, the eluted part will adhere to the wafer and form the cause of the occurrence of particles that cause defects, or eluted from the above during the heat treatment after the exposure process Part of the generated particles will be fixed or melted, affecting the line width of the pattern, or the existence of droplets. During the heat treatment after the exposure treatment, they will be on the surface of the wafer W. The internal temperature difference causes deterioration of the in-plane uniformity of the heat treatment, or the liquid droplet reacts with air to form a watermark on the surface of the wafer W.

In response to this, in the immersion exposure process, in order to suppress the elution of the photoresist before the immersion exposure is performed after the photoresist liquid is applied to the wafer W, and to make it difficult for the liquid during the immersion exposure to remain on the wafer W On the surface, a water-repellent protective film is applied to the surface of the wafer W, and this treatment will be performed in the protective film coating unit (ITC). If the development process is performed with this protective film applied, the photoresist cannot be dissolved by the developer, so the protective film must be removed before the development process. This process will be performed in the protective film removal unit (ITR) . In order to more reliably remove the eluted components of the photoresist liquid adhering to the wafer W or the liquid during the immersion exposure, that is, water droplets, the surface of the wafer W is cleaned after the liquid immersion exposure process. In the washing unit (RD).

Next, the layout of this embodiment will be described in detail. The carrier block S1 and the processing block S2, except that the stacking order of the unit blocks B1 to B5 are different, are formed with the photoresist pattern shown in FIG. 1 The device is roughly constructed in the same way.

Here, the difference between the photoresist patterning device shown in FIG. 1 and the processing block S2 is described here. As shown in FIG. 13, the two DEV layers B1, B2, and B1, B2 and The BCT layer B5, COT layer B4, and TCT layer B3 will be stacked in this order. The wafer W from the carrier block S1 will be directly transferred to the BCT layer B5 through the transfer platform TRS5 of the BCT layer B5. The DEV layers B1, B2 are The common main arm A2 is used to transport the wafer W to each part of the unit block B1, B2, and on the DEV layer B1, B2 In the DEV layer B2, only the transfer platforms TRS2, TRS6, TRS7 are provided. Among the two transfer platforms TRS6 and TRS7 installed in the scaffold unit U6, one of the transfer platforms TRS7 will be used from the processing block S2 to the auxiliary For the transfer of wafer W in block S5, the other transfer platform TRS6 will be used for the transfer of wafer W from auxiliary block S5 to processing block S2. In addition, in FIG. 13, for the convenience of illustration, only one first transfer platform TRS2 to TRS5 is drawn for each unit block B2 to B5 in the scaffold unit U5.

Then, the auxiliary block S5 adjacent to the processing block S2 is provided with a fourth transfer arm F in the center. The periphery of the transfer arm F, for example, viewed from the carrier block S1, is on the back, right and left, respectively There are scaffolding units U7, U8, U9. In the above-mentioned shelf unit U7, the transfer platforms TRS11 and TRS12 used to transfer the wafer W between the interface arm B of the interface block S3 are stacked in multiple stages, and in the shelf unit U8, for example, a protective film coating The cloth unit (ITC) 401 and the protective film removal unit (ITR) 402 are stacked in multiple stages. In the shelf unit U9, the aforementioned inspection unit 71, the aforementioned cooling unit (COL), heating unit (CHP), etc. are heated . The units of the cooling system will be stacked in multiple stages.

Here, the positional relationship of each part installed in the shelf units U7 to U9 will be described with reference to FIGS. 13 and 14. For example, in this example, the shelf unit U8 is stacked in multiple stages so that two protective film coating units 401 can be stacked on two protective film removal units 402, and the two protective film removal units 402 on the lower side are installed in the corresponding At the position of the two DEV layers B1 and B2 of the processing block S2, the two protective film coating units 401 on the upper side are installed in The positions of the BCT layer B5 and the COT layer B4 corresponding to the processing block S2.

In addition, the transfer platforms TRS11 and TRS12 of the scaffold unit U7, in this example, are arranged at positions corresponding to the protective film removal unit 402, and one side, such as the transfer platform TRS12, will be used from the auxiliary block S5 to the interface block. When S3 transfers the wafer W, the other side, such as the transfer platform TRS11, will be used when transferring the wafer W from the interface block S3 to the auxiliary block S5.

In addition, the fourth transfer arm F described above is, for example, shown in FIG. Each part of the shelf unit U7~U9 of the auxiliary block S5 is used to transfer the wafer W. For example, the transfer platform TRS7 of the shelf unit U6 of the processing block S2 and the two protective film coating units of the shelf unit U8 can be used. 401. The transfer platform TRS12 of the scaffold unit U7 and the corresponding parts of the scaffold unit U9 perform the transfer of the wafer W.

In addition, the transfer arm F2 on the lower side transfers the wafer W to the DEV layer B2 of the processing block S2, and can transfer the wafer W to each part of the shelf unit U7 to U9 of the auxiliary block S5. Transfer, for example, the transfer platform TRS6 of the scaffold unit U6 of the processing block S2, the two protective film removal units 402 of the scaffold unit U8, the transfer platform TRS11 of the scaffold unit U7, and the corresponding parts of the scaffold unit U9 The wafer W is transferred.

The transfer arms F1 and F2 are, for example, the same structure as the main arms A1 to A5, and are installed along the Y-axis rails on the surfaces of the arms F1 and F2 that face the transport area of the support shelf unit U9 (not shown). 107, for example in the Y side in the figure Free to move, free to advance and retreat, free to lift, and free to rotate around the vertical axis. In addition, in the interface block S3, at a position where the interface arm B can enter and exit, for example, two cleaning units (RD) 403 for cleaning the wafer W after the liquid immersion exposure are stacked.

In addition, a filter unit (FFU) 404 is provided on the upper side of the transport area of the transfer arm C of the carrier block S1. The filter unit 404 supplies a predetermined flow rate of clean gas with adjusted temperature and humidity, thereby allowing A downflow of clean gas is formed in the conveying area. In addition, a ULPA filter 405 is provided on the upper side of the interface block S3, and by this ULPA filter 405, clean air from which garbage and dust have been removed can be supplied into the interface block S3. In the foregoing embodiment, the filter unit 404 or the ULPA filter 405 may also be provided in the carrier block S1 and the interface block S3, respectively.

Next, the structure of the protective film coating unit 401, the protective film removing unit 402, and the cleaning unit 405 will be briefly described. Since these structures are almost the same, first take the protective film removing unit 402 as an example, and use FIG. 15 to proceed. instruction. In the figure, 410 is a rotating chuck that forms a substrate holding portion, and can hold the wafer W horizontally by vacuum suction. The rotating chuck 410 can be rotated around the vertical axis by the driving part 411 and can be raised and lowered. In addition, a cup 412 surrounding the wafer W and the side portion of the rotating chuck 40 is provided around the rotating chuck 410, and a drain including an exhaust pipe 13, a drain pipe 414, etc., is provided on the bottom surface of the cup 412 .

In addition, 420 in the figure is a chemical liquid nozzle for supplying the peeling liquid for peeling the protective film at the approximate rotation center of the wafer W. The chemical liquid nozzle 420 can be moved along the guide rail 422 (the guide rail 422 by the moving mechanism 421). Is along the way The longitudinal direction (Y direction) of the container 430), the standby area 423 provided on the outer side of the one end side of the cup 412 and the position where the chemical solution is supplied at the approximate center of the rotation of the wafer W can move freely, And lift freely.

In addition, 424 in the figure is a cleaning nozzle for supplying cleaning liquid to remove the peeled protective film at the approximate center of rotation of the wafer W. The cleaning nozzle 424 can be moved along the above-mentioned path by the moving mechanism 425. The guide rail 422 is free to move between the standby area 426 provided on the outer side of the other end side of the cup 412 and the position where the cleaning solution is supplied at the approximate center of rotation of the wafer W. In addition, 431 is a carry-out entrance for the wafer W formed on the surface facing the transport area of the transfer arm F2 of the processing container 430, and an opening and closing shutter 432 is provided.

Then, in this protective film removing unit 402, the wafer W is carried into the processing container 430 via the carry-out entrance 431 by the transfer arm F2, and transferred to the spin chuck 410. Then, the stripping liquid for removing the protective film is supplied from the chemical liquid nozzle 420 to the approximate center of rotation of the wafer W, and the spin chuck 410 is rotated at the same time, and the stripping liquid is diffused in the radial direction of the wafer W by centrifugal force. In this way, the above-mentioned peeling liquid is supplied to the entire protective film formed on the surface of the wafer W, thereby peeling the protective film from the surface of the wafer W.

After that, the chemical liquid nozzle 420 is moved to the standby area 423. On the other hand, the cleaning nozzle 424 is moved to a position where the cleaning liquid is supplied at the approximate rotation center of the wafer W, and the cleaning is supplied at the approximate rotation center of the wafer W. While liquid, the rotating chuck 410 is rotated. In this way, centrifugal force is used to diffuse the above-mentioned cleaning liquid in the radial direction of the wafer W, thereby washing the self-crystal A protective film peeled off the surface of the circle W. Next, the wafer W is rotated at a high speed to dry the cleaning solution on the surface of the wafer W, and then the wafer W is carried out to the outside of the protective film removal unit 402 via the carry-out inlet 431 by the fourth transfer arm F2.

In addition, in the protective film coating unit 401, except for the point where the chemical liquid for forming the protective film is supplied from the chemical liquid nozzle 420 to the surface of the wafer W and the cleaning nozzle 424 is not provided, the rest is in the protective film removing unit 402 has the same composition. In addition, in the protective film coating unit 401, the chemical liquid for forming the protective film is supplied from the chemical liquid nozzle 420 to the approximate center of rotation of the wafer W, and at the same time, the rotating chuck 410 is used to spread the chemical liquid by centrifugal force. In the radial direction of the wafer W, a liquid film of the chemical solution is formed on the surface of the wafer W to form a protective film.

Next, the cleaning unit 403 will be described. In this cleaning unit 403, except for the point where the cleaning liquid, such as pure water, is supplied to the surface of the wafer W from the cleaning nozzle 424 and the chemical liquid nozzle 420 is not provided, the rest is The structure is the same as that of the protective film removal unit 402. When the cleaning nozzle 424 moves along the guide rail 422, the cleaning liquid is supplied from the cleaning nozzle 424 on a straight line L passing through the approximate center of rotation of the wafer W.

In the cleaning unit 403, the wafer W is carried into the processing container 430 via the interface arm B, and transferred to the rotating chuck 410. Then, as shown in FIG. 16(a), with the spin chuck 410 rotating, first, the cleaning solution is supplied from the cleaning nozzle 424 to the approximate center of rotation of the wafer W, and then as shown in FIG. 16(b) As shown, while slowly moving the cleaning nozzle 424 toward the periphery of the wafer W, the cleaning is supplied on the above-mentioned straight line L of the wafer W. liquid.

In this way, although the cleaning liquid is diffused in the radial direction of the wafer W by centrifugal force, when the cleaning liquid is supplied at the approximate rotation center O of the wafer W, as shown in FIG. 17(a), it will diffuse into Concentric circles centered on the above-mentioned rotation center O. In addition, if the supply point P of the cleaning liquid from the cleaning nozzle 424 is moved to the periphery of the wafer W, since the wafer W is rotating, the cleaning liquid is supplied to the circle connecting the supply point P (Figure 17(b) On the circle indicated by the dotted line), the cleaning liquid spreads to the outside of the circle connecting the supply point P. By supplying the cleaning liquid from the center O of the wafer W to the outer periphery on the straight line L of the wafer W in this way, the area wetted by the cleaning liquid will slowly move from the center O of the wafer W to the outside. As a result, the entire surface of the wafer W is cleaned.

At this moment, the area wetted by the cleaning solution slowly moves from the center O of the wafer W to the outside, and therefore, it is sequentially cleaned from the center O of the wafer W to the outside. In addition, since the cleaning liquid is diffused by centrifugal force, the cleaning liquid does not diffuse inside the supply point P of the cleaning liquid, so the wafer W is dried sequentially from the center, and the droplets in this area can be suppressed. As a result, the eluted components of the photoresist liquid adhering to the wafer W or the liquid during the immersion exposure can be reliably removed. Therefore, the adhesion of the eluted part of the photoresist can cause the occurrence of particles or damage to the pattern. The adverse effects caused by the line width can be suppressed, and the in-plane uniformity of the heat treatment due to the droplets remaining on the wafer W can be prevented from deteriorating or the occurrence of watermarking.

In the photoresist pattern forming apparatus having such a configuration, the liquid immersion exposure treatment is performed, and then the cleaning treatment is performed after the exposure treatment, for example, Similarly to the first embodiment described above, the wafer W is transported in the order of carrier block S1BCT layer B5COT layer B4TCT layer B3, followed by the first transfer platform TRS2 of the scaffold unit U5transfer arm D The main arm A2 of the DEV layer B2 the second transfer platform TRS7 of the scaffold unit U6 the fourth transfer arm F1 of the auxiliary block S5 the protective film coating unit 401 of the scaffold unit U8 the transfer platform TRS12 of the scaffold unit U7 The interface arm B of the interface block S3 is transported by the path of the exposure device S4, and the exposed wafer W is the interface arm B of the interface block S3 the cleaning unit 403 the interface arm B the shelf of the auxiliary block S5 Transfer platform TRS11 of shelf unit U7 4th transfer arm F2 Protective film removal unit 402 of scaffold unit U8 4th transfer arm F2 Transfer platform TRS6 of scaffold unit U6 of processing block S2 Main arm A2 DEV Convey along the route of floor B1 (B2).

Since this embodiment is to provide the necessary units for liquid immersion exposure in the auxiliary block S5 provided between the processing block S2 and the interface block S3, that is, the protective film coating unit 401 and the protective film removing unit 402, Therefore, by assembling the auxiliary block S5, the layout of the processing block S2 is not changed, and it can correspond to the liquid immersion exposure and the liquid immersion exposure without changing the layout. When the liquid immersion exposure is not performed at this time, it is only necessary to transport the wafer W through the auxiliary block S5 as it is.

In addition, if the protective film coating unit 401 that performs the treatment before the exposure treatment after the formation of the coating film, or the protective film removal unit 402 that performs the treatment after the exposure treatment before the development treatment is installed here, it can be installed in the treatment block. The above processing is performed on the wafer W path between S2 and the interface block S3. The so-called coating film here means the photoresist film, the reverse formed on the top and bottom of the photoresist film Shot prevention film. Therefore, while suppressing the complication of the transport path of the wafer W, the processing can be performed at an appropriate timing after the coating film is formed or after the exposure processing. Even if such processing is performed, the complication of the transport program can be suppressed.

In addition, by providing the cleaning unit 403 in the interface block S3, the space vacated by the interface block S3 can be effectively used as the installation space of the cleaning unit 403. Therefore, even if the cleaning unit 403 is installed, it is not necessary to install the cleaning unit 403 in the scaffold unit installed in the processing block S2 or the interface block S3, and it is not necessary to change the type of the unit installed in the scaffold unit. Or the number and layout, and there is no need to separately set up other installation space, so the size of the device can be suppressed.

In addition, by providing the cleaning unit 403 in the interface block S3, the transport distance of the wafer W from the liquid immersion exposure device S4 to the cleaning unit 403 is short, and it can be cleaned immediately after the liquid immersion exposure. If the eluted part of the photoresist or the droplets adhere to W, it can still be washed more reliably. That is, if the eluted part of the photoresist or the droplets are transported for a long distance after the liquid immersion exposure, the time that the wafer W is in contact with the air will be longer, and the eluted part or the droplets will be in contact with the air. It may change into a state that is not easy to clean, such as a watermark. However, if the cleaning unit 403 close to the liquid immersion exposure device S4 is installed as in this example, the above-mentioned eluted portion or droplets will be caused by air contact. The risk of change is reduced, and the above-mentioned eluted portion and the like can be easily removed from the surface of the wafer W under the cleaning by the cleaning solution.

Also, in this embodiment, when the anti-reflection film is not formed, the protective film described above may be formed on the photoresist film, or the cleaning process may be performed during the exposure process. Perform either before or after or both before and after exposure processing. In addition, when there is no protective film, the above-mentioned cleaning unit 403 can be used simply to remove the dirt of the wafer W, or the cleaning unit 403 can be installed in the auxiliary block S5.

In addition, in the present invention, as shown in, for example, FIGS. 18 to 20, in the photoresist pattern forming apparatus shown in FIG. Layer) B6 is used as one of the unit blocks, and a protective film removal unit 402 is provided on the DEV layers B1 and B2. This example corresponds to the layout when the anti-reflection film is not formed on the upper layer side of the photoresist and the protective film is formed. As shown in Fig. 19, the processing block S2 is sequentially stacked with two DEV layers B1, B2, and BCT from the lower side. Layer B5, COT layer B4, ITC layer B6, and the above-mentioned ITC layer B6 has the same configuration as the above-mentioned TCT layer B3 except that a protective film coating unit 401 is provided as a liquid treatment unit.

In addition, in the DEV layers B1 and B2, as shown in FIG. 18, for example, two developing units 31 and one protective film removing unit 402 are provided as a liquid processing unit, and a cleaning unit 403 is provided in the interface block S3. . In addition, the wafer W from the carrier block S1 is directly transferred to the BCT layer B5 via the transfer platform TRS5 of the BCT layer B5, and the wafer W from the processing block S2 is transferred via the DEV, for example, The transfer platform TRS7 of the layer B2 is transferred to the interface block S3, and the wafer W in the interface block S3 is transferred to the DEV layer B2 through the transfer platform TRS6.

In addition, in the two DEV layers B1 and B2, the common main arm A2 is used to transport the wafer W to each part, and the first transfer platform TRS2 and the second transfer platform TRS6, TRS7, and the rack units U1, U2, U3 are Only set in DEV Layer B2. In addition, in Fig. 19, for ease of illustration, in the scaffold unit U5, a first transfer platform TRS2, TRS5, TRS4, TRS8 is depicted in the DEV layer B2, BCT layer B5, COT layer B4, and ITC layer B6, respectively. In the scaffold unit U6, two second transfer platforms TRS6 and TRS7 are drawn on the DEV layer B2. In addition, the above-mentioned filter unit (FFU) 404 is provided on the upper side of the transport area of the transfer arm C of the carrier block S1, and the ULPA filter 405 is provided on the upper side of the interface block S3. The device is the same.

In the photoresist pattern forming apparatus of such a structure, when the liquid immersion exposure process is performed, and the cleaning process is performed after the exposure process, for example, as in the first embodiment described above, the wafer W is a carrier block S1 BCT layer B5COT layer B4ITC layer B6 is transported in the order, followed by the first transfer platform TRS8 of the scaffold unit U5transfer arm Dthe first transfer platform TRS2the main arm A2 of the DEV layer B2the scaffold unit The second transfer platform TRS7 of U6the interface arm B of the interface block S3the exposure device S4 is transported. The exposed wafer W is the interface arm B of the interface block S3the cleaning unit 403the interface arm B The second transfer platform TRS6 of the shelf unit U6 of the processing block S2 the main arm A2 the protective film removal unit 402 of the DEV layer B1 (B2) the main arm A2 the DEV layer B1 (B2).

In this embodiment, a unit block (ITC layer) B6 for coating the protective film is also laminated in the processing block S2, and a cleaning unit 403 after exposure processing is provided in the interface block S3, and on the DEV layers B1, B2 The protective film removal unit 402 is provided, so that the wafer W channel between the processing block S2 and the exposure device S4 can be used for liquid immersion exposure without being retrograde to the wafer W transport path Formation of a protective film before light, a cleaning process after the exposure process, and a protective film removal process after the cleaning process before the development process. Therefore, on the one hand, the complexity of the transport path of the wafer W can be suppressed, and on the other hand, the inspection or cleaning can be performed at an appropriate timing after the coating film is formed or after the exposure process. When such inspection or cleaning is performed, the same It can suppress the complication of the conveying process. In addition, by providing the cleaning unit 403 in the interface block S3, the space vacated by the interface block S3 can be effectively used, and the transfer distance of the wafer W from the liquid immersion exposure device S4 to the cleaning unit 403 can be obtained. Effect.

Furthermore, in this embodiment, an anti-reflection film can also be formed on the photoresist film, and a protective film can be formed thereon. In this case, for example, in the processing block S2, there are two DEV layers B1, B2, and B2 from the lower side. Each unit block is stacked in the order of BCT layer B5, COT layer B4, TCT layer B3, and ITC layer B6.

In addition, in the present invention, at least one of the first transfer platform provided on the shelf unit U5 and the second transfer platform provided on the shelf unit U6 may also be used as a temperature adjustment unit for temperature adjustment of the wafer W (CPL). The temperature adjustment unit (CPL) is to place the wafer W before the coating film is formed, and adjust the temperature of the wafer W to apply the chemical solution for coating the coating film, as shown in FIG. 21, for example, Equipped with: placing the wafer W heated by the heating unit, and roughly adjusting the first temperature to the first temperature control plate 510, and placing the wafer W, and the wafer W is more precisely temperature-adjusted to be coated The second temperature control plates 520 for the temperature of the chemical solution for forming a cloth coating film are stacked on top of each other in the common processing container 501. Here, the process of applying the chemical solution for forming the coating film includes, for example, a process of applying a photoresist solution to the wafer W, and forming a reflection prevention process on the wafer W. The treatment at the time of film stop, the treatment at the time of forming a water-repellent protective film at the time of liquid immersion exposure on the wafer W, etc.

In this example, in the processing container 501, a first temperature control plate 510 is provided on the upper side, and a second temperature control plate 520 is provided on the lower side. The processing container 501 is provided with a substrate 502 for partitioning the interior of the container 501 in the vertical direction, and the substrate 502 is supported by a first support portion 504 extending vertically from the bottom wall 503 of the processing container 501. The substrate 502 is provided with a first temperature control plate 510 made of a member with good thermal conductivity such as copper or aluminum. The first temperature control plate 510 is supported by a cylindrical mounting portion 511, for example.The central part. The center part. The central part. The center part. The center part.

In this example, the first temperature control plate 510 is made of, for example, aluminum, is formed in a substantially circular plate shape having a thickness of about 15 mm, and has a diameter substantially the same as that of the wafer W. In addition, a protrusion 512 for supporting the wafer W in a state where it floats from the temperature control plate 510 by about 0.1 mm to 0.3 mm is provided on the surface. In addition, in the peripheral portion of the temperature control plate 510, for example, at four places, as shown in FIG. 22, notches 513 are formed in the center portion of the temperature control plate 510.

In addition, a first heating pipe 514 is provided on the temperature control plate 510. The heating pipe 514 is installed, for example, to be buried in a groove not shown in the figure formed on the back side of the temperature control plate 510. A part of the heating pipe 514 is It is connected to the placing part 511. Here, the heating pipes 514 are, for example, provided so as to be distributed over the entire back side of the temperature control plate 510.

In addition, a second heating tube 515 is embedded in the substrate 502 so as to be able to contact the bottom surface of the placing portion 511. This second heating tube 515 is capable of It is embedded along the substrate 502 to one end side of the substrate 502, the other end side is extended from the substrate 502 and then bent to the upper side, a part of the other end side is connected to, for example, made of copper or aluminum The surface of the heat transfer member 516.

Here, the heating pipes 514 and 515 are explained. The heating pipes are heat transfer elements for heat transfer (absorption and release of latent heat by evaporation and condensation), such as metal pipes made of aluminum, stainless steel, copper, etc. The inner wall of the body is formed by attaching a porous body. The above-mentioned porous body is used to obtain the capillary phenomenon described later, such as a metal mesh or a metal felt formed by weaving thin metal wires. The tube is blocked at both ends and exhausted inside. For example, it is set in a vacuum state, and a small amount of volatile liquid (actuating fluid) composed of sodium or naphthalene is enclosed in it.

In such a heating tube, if one end (evaporation part) is heated, the actuating fluid will evaporate (absorption of the heat of the latent heat of evaporation) to form a vapor flow, and a slight pressure difference will cause the inside of the tube to the other end. The condensed part (low temperature part) moves at a high speed, where the above-mentioned vapor stream contacts the wall surface of the tube body to cool and condense. At this moment, heat is released by the heat of condensation, so the heat is transferred to the condensation part. Then, the condensed liquid will flow through the porous body to the evaporation part by capillary phenomenon, and repeat the cycle of evaporationmovementcondensation again, so that the heat can be continuously transported. Therefore, if the other end side is cooled, the surface of the heating tube will be fully heated. The experience is uniformly cooled. The heating tube referred to here is not necessarily limited to a tube of a general concept, and may be a flat plate having a wide cavity with a working fluid enclosed in it.

In addition, the second temperature control plate 520 is made of aluminum, for example, It has a substantially circular plate shape with a thickness of about 15 mm, and has a larger diameter than the wafer W. In addition, a temperature-adjusting liquid flow path 521 for flowing a temperature-adjusting liquid adjusted to a predetermined temperature is provided inside. The second temperature control plate 520 is supported by the second support portion 505 extending perpendicularly from the bottom wall 503 of the processing container 501 to the inner side of the first support portion 504 to support the vicinity of the peripheral area on the back side, and is provided on the surface of the second support portion 505. The protrusion 522 supported in a state where the wafer W is floated from the temperature control plate 520 by about 0.1 mm to 0.3 mm.

In addition, the temperature control plate 520 is provided with a support pin 506 for transferring the wafer W to an external transport mechanism. 1 The support part 504 is provided with a lifting mechanism 507 that supports the pin 506 described above.

In the figure, 530 is a temperature-adjusting liquid circulation path that circulates the temperature-adjusted temperature-adjusting liquid. For example, a through pipe formed of a member with good thermal conductivity such as aluminum can penetrate the processing container 501 in the vertical direction. In addition, the temperature-adjusting fluid circulation path 530 is set to penetrate the approximate center of the heat transfer member 516, and in the temperature-regulating fluid circulation path 530, the temperature-regulating fluid flow path 521 of the second temperature-regulating plate 520 is used for The temperature control liquid supply path 531 for supplying the temperature control liquid and the temperature control liquid discharge path 532 for discharging the temperature control liquid from the temperature control liquid flow path 521 of the second temperature control plate 520 are connected. In the figure, 534 is a temperature adjustment mechanism for the temperature adjustment liquid provided outside the processing container 501.

In this way, if a thermoregulated liquid adjusted to a predetermined temperature, for example, 23°C, is circulated in the thermoregulated liquid circulation path 530, the first heating tube 514 will be in thermal contact with the heating tube 514 via the placing portion 511, the second heating tube 515, and the heat transfer member 516. The outside of the temperature-regulating fluid circulation path 530, so the heat outside the temperature-regulating fluid circulation path 530 will be constructed by heat transfer. The heat is transferred through the path of the piece 516 the second heating tube 515 the placing part 511 the first heating tube 514. In this way, the temperature of the first heating tube 514 is adjusted to the temperature outside the temperature-regulating liquid circulation path 530. As a result, the surface of the first temperature control plate 510 is temperature-adjusted to approximately 23° C. precisely. In addition, since the thermoregulating liquid is circulated and supplied to the thermoregulating liquid flow path of the second thermoregulating plate 520, the surface temperature of the second thermoregulating plate 520 is always accurately adjusted to a temperature of 23°C.

Next, a description will be given of the transfer mechanism 530 for transferring the wafer W to the wafer W of the first temperature control plate 510 and the second temperature control plate 520. For example, use the transfer arm C installed in the carrier block S1, the transfer arm D installed in the processing block S2, and the main arm A installed in each unit block. When the scaffold unit U6 is equipped with a temperature control unit 500, use The main arm A1 (A2) arranged in the DEV layer B1, B2, the interface arm B arranged in the interface block S3, the third or fourth transfer arm E, F1, F2, etc. arranged in the auxiliary block S5 are used.

Moreover, this conveying mechanism 530 has a horizontal horseshoe-shaped conveying arm 531 as shown in FIG. There are four protrusions 533 inwardly, as shown in the figure, the wafer W can be held on the protrusions 533.

The transfer arm 531 is, for example, a drive mechanism that is not shown to move up and down through the transfer base 532, and is free to advance and retreat. When the wafer W is transferred to the first temperature control plate 510, the transfer arm 531 holding the wafer W will It enters into the processing container 501 through the conveyance port (not shown) of the processing container 501. Here, since the notches 513 on the outer periphery of the temperature control plate 510 are respectively provided at positions corresponding to the protruding pieces 533 of the conveying arm 531, the conveying arm 531 is lowered so as to cover the temperature control plate 510 from the upper side. The transfer arm 531 passes through the lower side of the temperature control plate 510, and the wafer W on the transfer arm 531 is transferred to the temperature control plate 510. The transfer arm 531 that transfers the wafer W is retracted from the processing container 501 by retreating the front notch 534 through the outside of the placing portion 511 to the front side. In response to this, the diameter of the placing portion 511 is set to be smaller than the notch portion 534 formed in the conveying arm 531.

In addition, between the second temperature control plate 520, the support pin 506 is protruded from the upper side of the second temperature control plate 520, and the support pin 506 can be lowered so that the support pin 506 can be covered by the conveying arm 531, thereby conveying The wafer W on the arm 531 will be transferred to the support pin 506. The transfer arm 531 after the wafer W is transferred has the front notch 534 retreats to the front side through the outside of the support pin 506, and then retreats from the processing container 501, and then the support pin 506 is lowered, thereby enabling it to be removed from the support The pins 506 are used to transfer the wafer W to the second temperature control plate 520. In response to this, the position of the support pin 506 can be set by the notch 534 formed in the above-mentioned conveying arm 531 by way of the outer side of the support pin 506.

Such a temperature adjustment unit 500 can be incorporated in any of the above-mentioned photoresist pattern forming devices, but here, for example, a case where it is incorporated in the device shown in FIG. 18 will be described as an example. In this example, as shown in Figure 23, the temperature control units CPL5, CPL4, and CPL6 are respectively provided in the BCT layer B5, COT layer B4, and ITC layer B6 of the scaffold unit U5. The transfer platform TRS2 is provided in B2, and two temperature adjustment units CPL1 and CPL2 are installed in the DEV layer B2 of the scaffold unit U6. One temperature adjustment unit CPL2 is used to transfer from the processing block S2 to the interface block S3 It is used when wafer W is used, and the other temperature control unit CPL1 is used when wafer W is transferred from interface block S3 to processing block S2.

In addition, in Fig. 23, for convenience, the transfer platform TRS is only depicted on the scaffold unit U5 on the DEV floor B2, but in fact, it can also be installed in the scaffold unit U5, U6 and the temperature control unit 500 in each unit block. , Or form a unit block with only TRS transfer platform. In addition, the number of temperature control units 500 or transfer platforms TRS installed in the scaffold units U5 and U6 can be appropriately selected.

Next, the flow of the wafer W of such a device will be described. The wafer W of the carrier block S1 will be transferred to the BCT layer B5 via the temperature adjustment unit (CPL5) of the BCT layer B5 by the transfer arm C. Here, the temperature adjustment is performed. The second temperature adjustment plate 520 of the unit (CPL5) is placed for a predetermined time, whereby the temperature of the wafer W is adjusted to (23+0.2)°C. Then, by the main arm A5, it is conveyed in the order of the 1st anti-reflection film forming unit 34 the heating unit (CHP5) the first temperature control plate 510 of the temperature control unit (CPL5) of the shelf unit U5. Here, in the heating unit (CHP5), the wafer W is as described above. After the heating plate 53 is heated, the cooling plate 54 is used to roughly dissipate heat to 50°C. Therefore, the wafer W is placed in the temperature control unit. (CPL5) on the first temperature control plate 510 for about 12 seconds, the wafer W can be roughly cooled from 50°C to (23+1)°C.

Next, the wafer W of the temperature control unit (CPL5) is D is transferred to the COT layer B4, and is transferred to the second temperature control plate 520 of the temperature control unit (CPL4). The temperature control plate 520 is placed on the temperature control plate 520, for example, for 12 seconds, whereby the wafer W will change from (23+ 1) Cool down to (23+0.2)°C. Then, with the main arm A4, perform the first temperature adjustment of the hydrophobization treatment unit (ADH)cooling unit (COL4)coating unit 32heating unit (CHP4)the temperature adjustment unit (CPL4) of the shelf unit U5 The plates 510 are transported in order, and the wafer W roughly dissipated to about 50°C by the cooling plate 54 of the heating unit (CHP4) will be placed on the first temperature control plate 510 for 12 seconds, thereby cooling from 50°C to (23+1)°C.

Next, in order to transfer the wafer W of the temperature control unit (CPL4) to the ITC layer B6 by the transfer arm D, it is transferred to the second temperature control plate 520 of the temperature control unit (CPL6). On this temperature control plate 520, For example, by placing it for 12 seconds, the wafer W will be cooled from (23+1)°C to (23+0.2)°C. Then, by the main arm A6, the protective film coating unit 401 the heating unit (CHP6) the first temperature control plate 510 of the temperature control unit (CPL6) of the shelf unit U5 is transported, and the heating unit ( The wafer W roughly dissipating heat to about 50°C by the cooling plate 54 of CHP6) is placed on the first temperature control plate 510 for 12 seconds, thereby cooling from 50°C to (23+1)°C.

Then, the wafer W of the temperature control unit (CPL6) is transferred to the transfer platform TRS2 by the transfer arm D, and is transferred to the second temperature control plate of the temperature control unit (CPL2) of the shelf unit U6 by the main arm A2 520, for example, placed on the top for 12 seconds, whereby the wafer W will be cooled from (23+1)°C to (23+02)°C. Next, the wafer W of the temperature control unit (CPL2) is taken out by the interface arm B and transported to the exposure device S4, where the determination is made The liquid immersion exposure treatment. The exposed wafer W is transported to the interface arm Bcleaning processing unit 403interface arm Bthe first temperature control plate 510 of the temperature control unit (CPL1), where it is roughly cooled to (23+1)°C .

After that, on the DEV layer B1 (DEV layer B2), with the main arm A2, the protective film removal unit 402 heating unit (PEB1 (PEB2)) cooling unit (COL1 (COL2)) developing unit 31 heating unit It is transported in the order of (POST1 (POST2)), and the predetermined development process is performed. The wafer W subjected to the development processing in this way is returned to the original carrier 20 placed on the carrier block S1 by the transfer arm C via the first transfer platform TRS2.

If the scaffold unit U5 and the scaffold unit U6 are provided with a temperature control unit 500 that also serves as a transfer platform in this way, it can be used between each unit block, or between the carrier block S1 and the processing block S2, or between the processing block S2 and the processing block S2. The temperature of the wafer W is adjusted during the waiting time for the transfer of the wafer W between the interface block S3 or between the processing block S2 and the auxiliary block S5. Therefore, the total processing time can be shortened and the production capacity can be achieved. The promotion.

At this moment, when the wafer W is transported between the unit blocks B3, B5, and B6 for forming the coating film, the wafer W is first transferred to the temperature control unit of the unit block where one coating film is formed. The first temperature control plate 510, after roughly adjusting the temperature of the wafer W to (23+1)°C, transports the wafer W to the second temperature control plate 520 of the temperature control unit of the unit block where the next coating film is formed<img file="TWI367397B_D0001.tif" />For the wafer W, the temperature of the wafer W is precisely adjusted to (23+0.2)° C. The temperature can be adjusted (cooled) step by step, and the total temperature adjustment (cooling) time can be shortened.

In addition, in the above-mentioned temperature control unit, the first temperature control plate 510 for adjusting the wafer W to (23+1)°C uses the heating tubes 514 and 515 to adjust the temperature of the temperature control plate, and it relates to adjusting the wafer W to The second temperature control plate 520 of (23+0.2)°C circulates the temperature control liquid to adjust the temperature of the temperature control plate. Therefore, when the temperature of the first temperature control plate 510 is adjusted, the temperature control liquid will not enter and exit the temperature control liquid circulation path, so the temperature control liquid can be performed without the flow pressure loss of the temperature control liquid in the temperature control liquid circulation path. By adjusting the temperature of the plate 510, in the second temperature adjusting plate 520, the flow rate of the temperature adjusting liquid circulated and supplied into the plate 520 does not change, so that the temperature of the plate 520 can be adjusted accurately.

In addition, since the second temperature control plate 520 of the temperature control unit 500 can perform the same task as the cooling plate of the cooling unit (COL) illustrated in FIG. In this cooling unit, the first temperature control plate 510 or the second temperature control plate 520 of the temperature control unit 500 is used to cool the wafer W.

In this way, the number of cooling units installed in each unit block can be reduced, or cooling units can be omitted, and other units can be installed in the space where the cooling unit has been installed so far in the unit block. Here, in order to increase the production capacity, it is necessary to install 4 rows of heating units (CHP) in each unit block, but since it can meet such a requirement, the total production capacity can be increased.

In addition, in this temperature control unit 500, two or more first temperature control plates 510 may be stacked. Here, the first temperature control plate 510 is configured such that the external transport mechanism 530 can pass from the upper side of the temperature control plate 510 to the lower side to transfer the wafer W to the temperature control plate 510, and therefore is combined with the support pin Come up and down In contrast, when transferring wafers W, a lifting mechanism is not required. Therefore, the vertical size of the area where the temperature control plate 510 is provided can be reduced. Even if the vertical space is not so large, the stack structure can be easily adapted.

On the other hand, since the second temperature control plate 520 raises and lowers the support pins 506 to transfer the wafer W, the temperature control plate 520 can be formed larger than the wafer W even in the peripheral area of the wafer W. The temperature can still be adjusted sufficiently. As a result, the temperature of the temperature control plate 520 can be accurately adjusted to improve the in-plane uniformity of the temperature of the wafer W. Therefore, in the subsequent coating film formation process, in-plane uniformity can be achieved. High coating film.

In addition, although the first temperature control plate 510 is approximately the same size as the wafer W, the wafer W whose temperature is adjusted to about 50° C. is left for 12 seconds after the heat treatment, so that the temperature of the wafer W can be kept at The in-plane temperature is fully adjusted to (23+1)°C.

As mentioned above, the protective film coating unit 401 used in the liquid immersion exposure of the present invention can be installed in the auxiliary block S5 or the dedicated unit block (ITC) B6, and other coating film forming units can also be incorporated. Any one of the unit blocks B3~B5. In addition, the protective film removal unit 402 used for liquid immersion exposure can also be installed in the auxiliary block S5 or the DEV layer B1, B2, and other unit blocks B3 to B5 for coating film formation can be installed. Any of them. In addition, regarding the cleaning unit 403 used for liquid immersion exposure, in addition to being provided in the interface block S3 or the auxiliary block S5, any of the unit blocks B1 to B6 constituting the processing block S2 can also be installed. One.

In addition, the examples shown in FIGS. 12, 18, and 23 can also be applied to a group of transfer platforms that transfer wafers W between the main arms of each unit block, and use When the transfer arm that transfers the wafer W between the transfer platforms is installed on the side of the interface block, or not through the DEV layer B1, B2, but through the unit block for coating film formation, such as the BCT layer B5 , COT layer B4, TCT layer B3, ITC layer B5 any one of the layers, between the carrier block S1 and the interface block S3 (auxiliary block S5) to carry the wafer W transport example.

<p>WSemiconductor Wafer</p><p>20Carrier</p><p>S1Carrier block</p><p>S2Processing block</p><p>S3Interface block</p><p>S4Exposure device</p><p>S5Auxiliary block</p><p>A1~A5Main arm</p><p>BInterface Arm</p><p>CTransfer arm</p><p>DHandover arm</p><p>E3rd transfer arm</p><p>F1, F24th transfer arm</p><p>31Display Unit</p><p>32Coating unit</p><p>33The first anti-reflection film forming unit</p><p>34The second anti-reflection film forming unit</p><p>6Control Department</p><p>71Inspection Unit</p><p>72Washing unit</p><p>401Protective film coating unit</p><p>402Protective film removal unit</p><p>403Washing unit</p><p>500Temperature adjustment unit</p><p>510The first temperature adjustment board</p><p>520The second temperature adjustment board</p>

Fig. 1 is a plan view showing an embodiment of the coating and developing device of the present invention.

Fig. 2 is a perspective view showing the above-mentioned coating and developing device.

Fig. 3 is a side sectional view showing the above-mentioned coating and developing device.

Fig. 4 is a perspective view showing the developing unit, the shelf unit, and the conveying means of the coating and developing device.

Fig. 5 is a front view showing the shelf unit of the coating and developing device as viewed from the conveying area side.

Fig. 6 is a side sectional view showing an interface block of the above-mentioned coating and developing device.

Fig. 7 is a side cross-sectional view showing each unit block of the coating and developing device.

Fig. 8 is a plan view showing a fourth unit block of the above-mentioned coating and developing device.

Fig. 9 is a perspective view showing an example of an interface arm of the above-mentioned coating and developing device.

Fig. 10 is a plan view and a longitudinal sectional view showing a coating unit of the coating and developing device.

Fig. 11 is a plan view showing an example of still another embodiment of the above-mentioned coating and developing device.

Fig. 12 is a plan view showing an example of still another embodiment of the above-mentioned coating and developing device.

Fig. 13 is a side cross-sectional view showing the above-mentioned coating and developing device.

FIG. 14 is a diagram for explaining the wafer transfer between the auxiliary block and the processing block of the coating and developing device.

15 is a longitudinal sectional view and a plan view showing an example of a protective film removing unit of the coating and developing device.

Fig. 16 is a process diagram showing an example of a cleaning method performed in the cleaning unit of the coating and developing device.

FIG. 17 is a process diagram showing an example of a cleaning method performed in the cleaning unit of the above-mentioned coating and developing device.

Fig. 18 is a plan view showing an example of still another embodiment of the above-mentioned coating and developing device.

Fig. 19 is a side sectional view showing the above-mentioned coating and developing device.

20 is a cross-sectional view showing the processing block of the coating and developing device as viewed from the side of the interface block.

Fig. 21 is a longitudinal cross-sectional view showing an example of a temperature adjustment unit of the above-mentioned coating and developing device.

Fig. 22 is a plan view and a perspective view showing an example of a temperature adjustment unit of the coating and developing device.

FIG. 23 is a side sectional view showing an example of the layout when the temperature adjustment unit is installed in the coating and developing device.

Fig. 24 is a plan view showing a conventional coating and developing device.