Photo detector array

Light sensor array

With the rapid development of high technology, handwriting panels have been widely used in daily life such as PDAs and PCs.

At present, handwriting panels mainly include resistive, electromagnetic induction handwriting panels and capacitive handwriting panels, each of which has advantages and disadvantages.

Prior art handwriting panels include resistive type, electromagnetic induction type, capacitive type and photoelectric type. The principle of the handwriting panel of the present invention is completely different from the resistive, electromagnetic induction, and capacitive handwriting panels of the prior art; the technology of the handwriting panel of the present invention is also different from the photoelectric handwriting panel of the prior art. The prior art photoelectric handwriting panel first converts light signals into electric charges, stores them in the capacitance of a sensor array composed of capacitors, photoelectric elements, and switching transistors, and then reads out the charges row by row. One of the disadvantages is that the capacitor will take up extra area and reduce the aperture ratio of the panel. The second disadvantage is that the charge generated by the background light and the charge generated by the signal are all added together, and they are all stored in the capacitor, resulting in a dynamic range (dynamic range). ) Narrowing. Therefore, after careful research, the inventor disclosed a brand-new photo sensor array, which converts optical signals into photocurrent, which is different from the charge method of the prior art, and therefore the readout circuit is also completely different.

The photo sensor array of the present invention is applied to a handwriting or image input panel, which is connected to a thin film transistor array of a liquid crystal display, and a photo sensor array is added. The photo sensor array is composed of a plurality of photosensitive transistors, and can also be composed of a plurality of photosensitive transistors and a plurality of switching transistors.

The photo sensor array of the present invention is exactly the same as the thin film transistor array process of the liquid crystal display, and there is no increase in process steps at all. The cost is not to sacrifice a small aperture ratio (such as 10%), so that the liquid crystal display can have both display and handwriting. (Or non-handwriting) input function; that is, when the thin film transistor array is completed, the photo sensor array is also completed in one piece. With a readout circuit, various methods such as light pen, finger, chopsticks or ordinary pen can be used to input when handwriting.

The main purpose of the present invention is to provide a light sensor array, which can exist alone or can be added to the thin film transistor array of a computer or TV and other electrical appliances. The light sensor array is composed of switching transistors (a thin film transistor Crystal) and photosensitive transistor (a thin-film transistor whose gate and drain are short-circuited) are combined, or a photosensitive transistor (a thin-film transistor whose gate and drain are short-circuited) are combined separately. Provides functions such as handwriting input or image input.

Another object of the present invention is to provide a photo sensor array having a first high-area-efficiency photosensitive transistor structure. The first high-area-efficiency photosensitive transistor structure is a thin film transistor (TFT) with a gate and drain short-circuited. As a photo TFT, it can prevent the accumulation of parasitic capacitance between the gate and the drain, increase the response speed of the sensor, and change the shape of the photo TFT, so that it can produce the same with a smaller thin film transistor areaLightcurrent.

Another object of the present invention is to provide a photo sensor array with a second high-area-efficiency photosensitive transistor structure. The second high-area-efficiency photosensitive transistor structure is a thin film transistor (TFT) with gate and drain short-circuited. As a photosensitive transistor (photo TFT), it can prevent the accumulation of parasitic capacitance between the gate and drain, increase the response speed of the sensor, and change the shape of the photosensitive transistor, so that it can produce the same with a smaller thin film transistor areaLightcurrent.

A further object of the present invention is added to a first amplifier module at a rear end of the light sensor array, a second amplifier module (low-pass amplifier), a third amplifier module (bandpass amplifier ), a first An amplifier module can automatically adjust the background signal, and then use the principle of current differential to subtract the photocurrent generated by the background light, reduce the interference of background noise, increase the sensitivity of the system, and expand the dynamic range of the sensor (dynamic range), the first amplifier module can also perform automatic level compensation according to the change of the background light or the difference of the photoelectric characteristics of each sensor, that is, when there is no signal input, the output voltage of each sensor All are maintained at a stable level, so that the magnification can be designed to be extremely large (but not infinite), so that the signal response is very sensitive and the input signal can be easily judged as light or shadow; the second amplifier module can handle the first The amplifier module inputs a DC signal from the non-carrier signal generated by ordinary light pens, ordinary pens, flashlights, fingers or chopsticks, etc., filters out the high-frequency noise among them, and then outputs the processed DC signal; The three-amplifier module is used to process an AC signal from a specific light pen that provides an output specification input from the first amplifier module, and sense the modulated light output from the specific light pen (the pressure of the light pen tip is converted to frequency).

The present invention will be described below. Please refer to the accompanying drawings. Those skilled in the art should understand that the following description is only for illustration and not intended to limit the present invention.

The first embodiment: Please refer to the left side of Figure 1, which is a schematic diagram of a photo sensor array (detector array) 1 of the first embodiment of the present invention. It is a photo sensor array composed of a plurality of phototransistors and can exist alone It can also be added to a liquid crystal display thin film transistor array. When a prior art liquid crystal display thin film transistor array is added, the photo sensor array 1 and the prior art thin film transistor liquid crystal display can be fabricated on a glass substrate at the same time, and it is composed of one of the photo sensor arrays (detector array) 1 The photosensitive transistor senses the intensity and frequency of the input light or shadow.

As shown in Figure 1, the sensing point 11 is provided with a photosensitive transistor 110, the sensing point 12 is provided with a photosensitive transistor 120, the sensing point 13 is provided with a photosensitive transistor 130, and the sensing point 14 is provided with a photosensitive transistor. Transistor 140. The photosensitive transistor 110 has the functions of light sensing and switching at the same time, and the photosensitive transistors 120, 130, and 140 are also the same. The gate 11g and the drain 11d of the photosensitive transistor 110 are short-circuited; the arrangement of the photosensitive transistors 120, 130, 140 and the photosensitive transistor 110 are exactly the same.

When a first gate wire 1G is turned on (conductive: for example 15V; not conductive: for example -10V), a first current 1C is generated. At this time, if the circuit scans to the sensing point 11 and the photosensitive transistor 110 senses light, the intensity of the light at the sensing point 11 can be measured from the magnitude of the first current 1C. On the contrary, if the photosensitive transistor 110 does not sense light at this time, the first current 1C is a very low photo current, which means that there is no light at the sensing point 11. In this way, different currents generated under different light rays at different sensing points can be read out instantly by scanning.

In the same way, when a second gate line 2G is turned on (conductive: 15V; not conductive: such as -10V), a second current 2C is generated. At this time, if the circuit scans to the photosensitive transistor 120 and the photosensitive transistor 120 senses light, the intensity of the light at the sensing point 12 can be measured from the magnitude of the second current 2C. Conversely, if the photosensitive transistor 120 does not sense light at this time, the second current 2C is a very low photo current, which means that there is no light at the sensing point 12. In this way, different currents generated under different light rays at different sensing points can be read out instantly by scanning. Therefore, a readout circuit can be used to input handwritten (or non-handwritten) data on the thin film transistor liquid crystal display with the photo sensor array 1 of the present invention by using light pens, fingers, chopsticks, or ordinary pens. .

The second embodiment: Please refer to the left side of Figure 2, which is a schematic diagram of the detector array 2 of the second embodiment of the present invention. It is composed of a plurality of photosensitive transistors and a plurality of switching transistors, which can exist alone or Can be added to a liquid crystal display thin film transistor array. The photo sensor array 2 and the prior art thin film transistor liquid crystal display can be fabricated on a glass substrate at the same time. The intensity and frequency of the shadow are output to the external circuit. Among them, the photosensitive transistor is responsible for sensing light or shadow signals; the switching transistor is controlled by the scanning circuit to output the signals sensed by the photosensitive transistor line by line.

As shown in Figure 2, the sensing point 21 is provided with a photosensitive transistor 211 and a switching transistor 212, the sensing point 22 is provided with a photosensitive transistor 221 and a switching transistor 222, and the sensing point 23 is provided with a photosensitive transistor. The transistor 231 and a switching transistor 232 are provided with a photosensitive transistor 241 and a switching transistor 242 at the sensing point 24. The photosensitive transistor 211 has a light sensing function, and the photosensitive transistors 221, 231, and 241 are the same. The switching transistor 212 has a switching function, and the switching transistors 222, 232, and 242 are also the same. The gate 211g and drain 211d of the photosensitive transistor 211 are short-circuited and electrically connected to a bias voltage source (such as 5V) of 1V. The gate 212g of the switching transistor 212 is electrically connected to a first gate line 1G, the source 212s of the switching transistor 212 is electrically connected to a first data line 1D, and the drain 212d of the switching transistor 212 is electrically connected to the photosensitive transistor 211 The source 211s is electrically connected. The setting method of the photosensitive transistors 221, 231, 241 is the same as that of the photosensitive transistor 211, and the setting method of the switching transistors 222, 232, 242 is the same as that of the switching transistor 212.

When a first gate wire 1G is turned on (conductive: 15V; not conductive: -10V), a first current 1C is generated. At this time, if the circuit scans the switching transistor 212 and the photosensitive transistor 211 senses light, the intensity of the light at the sensing point 21 can be measured from the magnitude of the first current 1C. Conversely, if the photosensitive transistor 211 does not sense light at this time, the first current 1C is a very low photo current, which means that there is no light at the sensing point 21. In this way, different currents generated under different light rays at different sensing points can be read out instantly by scanning.

In the same way, when a second gate line 2G is turned on (conductive: 15V; not conductive: such as -10V), a second current 2C is generated. At this time, if the circuit scans the switching transistor 222 and the photosensitive transistor 221 senses light, the intensity of the light at the sensing point 22 can be measured from the magnitude of the second current 2C. Conversely, if the photosensitive transistor 221 does not sense light at this time, the second current 2C is a very low photo current, which means that there is no light at the sensing point 22. In this way, different currents generated under different light rays at different sensing points can be read out instantly by scanning. Therefore, a readout circuit can be used to input handwritten (or non-handwritten) data on the thin film transistor liquid crystal display with the photo sensor array 2 of the present invention by light pen, finger, chopsticks or ordinary pen. .

As mentioned above, both the photo sensor array 1 of the first embodiment and the photo sensor array 2 of the second embodiment are a photo sensor array, which can exist alone or be added to the thin film transistor array of a liquid crystal display The photo sensor array 2 of the second embodiment is composed of switching transistors 212, 222, 232, 242 and phototransistors 211, 221, 231, 241 whose gate and drain are short-circuited. The sensor array 1 is composed of photosensitive transistors 110, 120, 130, and 140 whose gate and drain are short-circuited. When the photo sensor array is added to a liquid crystal display thin film transistor array, it does not increase the manufacturing process of the liquid crystal display thin film transistor array. It only needs to sacrifice a small aperture ratio (such as 10%) of the liquid crystal display thin film transistor array. The liquid crystal display has both display and handwriting (or non-handwriting) input functions; that is, when the thin film transistor array is completed, the photo sensor array is also integrated, so that the liquid crystal display thin film transistor array can obtain the function of handwriting or image input . The system obtains the position coordinates of the light pen or general pen (using the shape of its shadow) from the photocurrent of the sensor read by the scanning circuit.

Third embodiment: The center of Figure 1 is the first amplifier module 3 of the third embodiment of the present invention, which includes a first variable resistor 31, a second variable resistor 32, a capacitor 33, and an operational amplifier. 34. A resistor 35, of which the second variable resistor 32 is temporarily not shown, and will be described in the fourth embodiment.

In the third embodiment of the present invention, the first amplifier module 3 is a first-stage amplifier, which can sense the background light intensity at that position by a photo sensor array 1 and convert it into a background signal. According to the background signal, the resistance value of the first variable resistor 31 is automatically adjusted in real time, and then using the principle of current differential, the photocurrent generated by the background light is subtracted from the signal entering the operational amplifier 34. In this way, the interference of background noise can be suppressed, the input light signal can be amplified, the sensitivity of the system can be improved, and the dynamic range of the sensor can be expanded. Specifically, the first variable resistor 31 can provide differential signal compensation. That is, when the resistance value change of the first variable resistor 31 is used for differential signal compensation, the sensitivity of the first amplifier module 3 of the third embodiment can be improved.

The lower center of FIG. 1 also includes the first amplifier module of the third embodiment of the present invention, which is the same as the first amplifier module 3 described above, and will not be repeated. The center of FIG. 2 also includes the first amplifier module of the third embodiment of the present invention, which is the same as the aforementioned first amplifier module 3, and will not be repeated.

Fourth embodiment: The first variable resistor 31 in the center of FIG. 1 can provide differential signal compensation. When there is no signal input, the output voltage is maintained at a stable level, that is, the magnification can be designed to be extremely large (but not infinite). At this time, the signal response is very sensitive and the input signal can be judged as light or shadow. In other words, when the output value is below the level, it is regarded as the input of the light pen, and when the output value is above the level, it is regarded as the input of the shadow (reverse amplifier); or when the output value is above the level, it is regarded as the input of the light pen. When the output value is below the level, it is regarded as the input of the shadow (forward amplifier). This compensation technology can automatically compensate for changes in the background light, and can also automatically compensate for the difference in the photoelectric characteristics of each sensor, that is, when there is no signal input, the output voltage of each sensor is maintained at a constant On a stable level. Therefore, the light pen can be used as an input tool, and the shadows of fingers, chopsticks or ordinary pens can also be used as handwritten (or non-handwritten) input tools.

As mentioned above, the first amplifier module 3 of the present invention can respond to various background light working environments such as variable intensity, extreme range, changing at any time or from time to time, etc., and can instantly subtract the photocurrent generated by the background light, and reduce the background noise. Signal interference; Second, automatic level compensation can be carried out with the change of the background light or the difference of the photoelectric characteristics of each sensor, so that the signal response is sensitive and the input signal can be easily judged as light or shadow, making light pens, fingers, chopsticks or Generally, the shadows of ordinary pens can be written on the optical sensing handwriting panel of the present invention. Furthermore, the first amplifier module 3 of the present invention can adjust the amplification rate of the input signal through the second variable resistor 32, which can improve the sensitivity of the system; and can avoid the saturation of the output signal, thereby expanding the dynamic range of the sensor.

Fifth embodiment: The right side of Figure 1 is a schematic diagram of the second amplifier module 51 and the third amplifier module 52 of the fifth embodiment of the present invention, where the second amplifier module 51 and the third amplifier module 52 are respectively a low-pass amplifier With a bandpass amplifier. Both the second amplifier module 51 and the third amplifier module 52 are a second-stage amplifier.

As shown on the right side of Figure 1, the second amplifier module 51 includes a first resistor 51a, a second resistor 51b, a capacitor 51c, an operational amplifier 51e, and a detector 51f. The detector 51f is electrically connected to the first operational amplifier. The output terminal of 51e, the first resistor 51a is electrically connected to the output terminal of the first amplifier module 3. The second amplifier module 51 processes the DC signal input from the first amplifier module (see the third and fourth embodiments), filters out high-frequency noise therein, and then outputs the processed DC signal to a A multiplexer (not shown in FIG. 1) is an analog-to-digital converter (AD converter, not shown in FIG. 1). The input DC signal comes from the non-carrier signal generated by ordinary light pen, ordinary pen, flashlight, fingers or chopsticks, etc. However, the detector 51f is not necessary in the second amplifier module 51; that is, without the detector 51f, the second amplifier module 51 still operates normally.

As shown on the right side of Figure 1, the third amplifier module 52 includes a first resistor 52a, a second resistor 52b, a first capacitor 52c, a second capacitor 52d, an operational amplifier 52e, and a detector 52f. The three amplifier module and the second amplifier module are connected in parallel between the first amplifier module and the output end of the data line to process the AC signal input from the first amplifier module (refer to the third embodiment) (the input The AC signal comes from a specific light pen that provides output specifications), which can sense the modulated light output by the specific light pen (the pressure of the light pen tip is converted to frequency). The detector 52f can read the magnitude of the signal amplitude.

The bottom right of FIG. 1 is also the fifth embodiment of the present invention, which also includes a low-pass amplifier and a band-pass amplifier, which are the same as the second amplifier module 51 and the third amplifier module 52 described above, and the description will not be repeated. The right side of FIG. 2 also shows the fifth embodiment of the present invention, which includes a low-pass amplifier and a band-pass amplifier, which are the same as the aforementioned second amplifier module 51 and third amplifier module 52, and will not be repeated.

As mentioned above, the second amplifier module 51 (low-pass amplifier) and the third amplifier module 52 (band-pass amplifier) are both a second-stage amplifier. When the first amplifier module 3 (belonging to the first-stage amplifier) deducts the photocurrent generated by the background light and purely amplifies the current generated by the optical signal, the current passes through the second amplifier module 51 or the third amplifier module 52 , Amplify the DC light signal or AC light signal respectively, so that shadow, DC light, and AC light can all be used as signal sources. Among them, the AC frequency can change with the pressure of the pen tip. Therefore, the light pen with AC light can be used in an environment where the light is very unstable (cannot distinguish whether the change of light is the signal or the background light), or it can be used when there is a Application of pressure-sensitive signal.

Therefore, the present invention is a circuit that can sense DC, AC, and shadow signals at the same time-a low-frequency filter, a high-frequency filter, a band-frequency filter, an automatic level compensation circuit, and an automatic amplification compensation circuit are combined in the readout circuit. Shadows, DC light, and AC light can all be used as signal sources.

Sixth embodiment: Figure 3A is a cross-sectional view of the first high-area-efficiency photosensitive transistor structure 61 of the sixth embodiment of the present invention, including a first source 61a (two locations in Figure 3A), a gate 61b, A drain 61c, an amorphous silicon (a-Si) layer 61g, an oxide layer 61h, and a channel length of 1L. As shown in Figure 3A, the gate 61b is located below the drain 61c and extends horizontally to (or beyond) the edges of the two first source 61a, and is electrically connected to the drain 61c (not shown) . There is usually a parasitic capacitance between the gate 61b and the drain 61c that are not electrically connected. Therefore, the high-area-efficiency photosensitive transistor structure 61 of the sixth embodiment of the present invention electrically connects the two to prevent the parasitic capacitance from accumulating, thereby increasing the sixth embodiment. The effective channel width of the first high-area-efficiency photosensitive transistor structure 61 of the embodiment.

Fig. 3B is a top view of the first high-area-efficiency phototransistor structure 61 of the sixth embodiment of the present invention, including a first source 61a (two locations in Fig. 3B), a gate 61b, and a drain 61c. A total of five unit areas are required; Figure 3B also marks a channel with a width of 1W. In FIG. 3B, the gate electrode 61b is located under the drain electrode 61c and extends to (or beyond) the edge of the two first source electrodes 61a, and is electrically connected to the drain electrode 61c (not shown in the figure). Parasitic capacitance usually exists between the gate 61b and the drain 61c that are not electrically connected. Therefore, the sixth embodiment of the present invention has a high-area-efficiency photosensitive transistor structure that electrically connects the two to prevent the parasitic capacitance from accumulating, thereby increasing the sixth implementation. For example, the effective channel width of the first high area efficiency photosensitive transistor structure 61 is twice the channel width 1W.

The first high-area-efficiency photosensitive transistor structure 61 of the sixth embodiment of the present invention is the photosensitive transistor 110, photosensitive transistor 120, photosensitive transistor 130, or photosensitive transistor of the first embodiment of the first embodiment of the present invention. The specific structure of the transistor 140.

FIG. 3C is a top view of the prior art low-area-efficiency photo-sensing device structure 62, including a first source 62a, a first gate 62b, a first drain 62c, a second source 62d, and a second The gate 62e and a second drain 62f require a total of six units of area. The effective channel width is twice the channel width 1W as shown in Fig. 3B, but one unit area is more than the unit area of Fig. 3B. From this, it can be seen that the first high-area-efficiency phototransistor structure 61 of the sixth embodiment of the present invention is compared with the prior art low-area-efficiency photo-sensing element structure 62, under the condition that the same effective channel width is twice the channel width 1W In the sixth embodiment of the present invention, the first high-area-efficiency photosensitive transistor structure 61 saves a unit area compared to the prior art photo-sensing element structure 62.

The sixth embodiment of the present invention has the same manufacturing process as the prior art thin film transistor liquid crystal display (TFT-LCD). In other words, without changing the prior art thin film transistor liquid crystal display (TFT-LCD) manufacturing process, the panel input function can be increased. In addition, compared with the prior art, the sixth embodiment of the present invention can generate the same photocurrent with a smaller photo TFT area, which can improve the unit area benefit, and therefore has a high area benefit.

Seventh embodiment: FIG. 4A is a cross-sectional view of the second high area efficiency photosensitive transistor structure 71 of the seventh embodiment of the present invention, including a first source 71a, a first gate 71b, a first drain 71c, A second drain electrode 71d (also a first source electrode 71a, see description below), a second gate electrode 71e, a second source electrode 71f, an amorphous silicon layer 71g, and an oxide layer 71h. In Figure 4B, the first gate 71b is located below the first drain 71c and extends horizontally to (or beyond) the edge of the second drain 71d (or the first source 71a), and is connected to the first drain 71c. A drain 71c is electrically connected (not shown); the left and right sides of the second gate 71e respectively extend to (or exceed) below the edges of the second drain 71d and the second source 71f. There is usually a parasitic capacitance between the gate 71b and the first drain 71c that are not electrically connected. Therefore, the seventh embodiment of the invention electrically connects the two with the high-area-efficiency photosensitive transistor structure so that the parasitic capacitance cannot be accumulated, thereby increasing the Seventh Embodiment The effective channel width of the second high area efficiency photosensitive transistor structure 71.

FIG. 4B is a top view of the second high area efficiency phototransistor structure 71 of the seventh embodiment of the present invention, including a first source 71a, a first gate 71b, a first drain 71c, and a second drain 71d (may also be a first source 71a, refer to the description in the next paragraph), a second gate 71e, and a second source 71f, which require a total of seven units of area. In FIG. 4B, the first gate 71b is located below the first drain 71c and extends (or exceeds) to the edge of the second drain 71d (or the first source 71a), and is connected to the first drain 71d. The pole 71c is electrically connected (not shown in the figure). There is usually a parasitic capacitance between the gate 71b and the first drain 71c that are not electrically connected. Therefore, the seventh embodiment of the invention electrically connects the two with the high-area-efficiency photosensitive transistor structure so that the parasitic capacitance cannot be accumulated, thereby increasing the In the seventh embodiment, the effective channel width of the second high area efficiency photosensitive transistor structure 71 is twice the channel width 1W.

The second high area efficiency photosensitive transistor structure 71 of the seventh embodiment of the present invention is the specific structure of the photosensitive transistor 211 and the switching transistor 212 of the photo sensor array 2 of the second embodiment of the present invention. In detail, the first source 71a, the first gate 71b, the first drain 71c, and the first source 71a together form the photosensitive transistor 211; the second drain 71d (which can also be the first of the photosensitive transistor 211) The source electrode 71a), the second gate electrode 71e, and the second source electrode 71f together constitute the switching transistor 222. The photosensitive transistor 221 and the switching transistor 222, the photosensitive transistor 231 and the switching transistor 232, or the photosensitive transistor 241 and the switching transistor 242 have the same composition as the photosensitive transistor 211 and the switching transistor 212.

FIG. 4C is a top view of a prior art low-area-efficiency photo-sensing device structure 72, including a first source 72a, a first gate 72b, a first drain 72c, a second source 72d, and a second The gate 72e, a second drain 72f, a third gate 72g, and a third source 72h require a total of eight units of area. The effective channel width is twice the channel width 1W as shown in Fig. 4B, but is more Figure 4B-7 has one more unit area than the seventh unit area. From this, it can be seen that the second high-area-efficiency phototransistor structure 71 of the seventh embodiment of the present invention is compared with the prior art low-area-efficiency photo-sensing element structure 72, when the same effective channel width is twice the channel width of 1W In the seventh embodiment of the present invention, the second high-area-efficiency photosensitive transistor structure 71 saves one unit area compared with the prior art photo-sensing element structure 72.

The seventh embodiment of the present invention has the same manufacturing process as the prior art thin film transistor liquid crystal display (TFT-LCD). In other words, without changing the prior art thin film transistor liquid crystal display (TFT-LCD) manufacturing process, the panel input function can be increased. In addition, compared with the prior art, the seventh embodiment of the present invention can generate the same photocurrent with a smaller photo TFT area, which can increase the efficiency per unit area, and therefore has a high area efficiency.

In conclusion, the first high-area-efficiency phototransistor structure 61 of the sixth embodiment of the present invention and the second high-area-efficiency phototransistor structure 71 of the seventh embodiment are both thin film transistors (TFT) with gate and drain short-circuited. As a photosensitive transistor, it can prevent the accumulation of parasitic capacitance between the gate and drain and increase the reaction speed of the photosensitive element. It can also change the shape of the photosensitive transistor so that it can produce the same size with a smaller thin film transistor area. Photocurrent.

The above are only the embodiments of the present invention and should not be used to limit the scope of implementation of the present invention. Any partial modification based on the content of the present invention without departing from the spirit of the present invention should fall within the scope of the present invention. By.

In summary, the technical means and achievable effects of the present invention are significantly different from those disclosed in the prior art photosensitive transistor structure and optical signal readout circuit. Furthermore, the present invention has not been seen in any public or publications prior to the application. Therefore, this case has the essential requirements of "practicality, novelty and advancement" for invention patents. Therefore, Yan Law filed an application for invention patents. I pray that your reviewer will allow time for the review.

<heading level="1">Prior art drawing number:</heading><p>62. . . Prior art low-area efficiency light sensing element structure</p><p>62a, 72a. . . First source</p><p>62b, 72b. . . First gate</p><p>62c, 72c. . . First drain</p><p>62d, 72d. . . Second source</p><p>62e, 72e. . . Second gate</p><p>62f, 72f. . . Second drain</p><p>72g. . . Third gate</p><p>72h. . . Third source</p><heading level="1">Drawing number of the invention:</heading><p>1. . . First Embodiment Light Sensor Array</p><p>1C. . . First current</p><p>1D. . . First data line</p><p>1G. . . First gate line</p><p>1V. . . Bias voltage source</p><p>1W. . . Channel width</p><p>11, 12, 13, 14, 21, 22, 23, 24. . . Sensing point</p><p>110, 120, 130, 140, 211, 221, 231, 241. . . Photosensitive transistor</p><p>11s, 211s, 212s. . . Source</p><p>11d, 211d, 212d, 61c. . . Dip pole</p><p>11g, 211g, 212g, 61b. . . Gate</p><p>2. . . Second Embodiment Light Sensor Array</p><p>2C. . . Second current</p><p>2G. . . Second gate line</p><p>212, 222, 232, 242. . . Switching transistor</p><p>3. . . The third embodiment first amplifier module</p><p>31. . . First variable resistor</p><p>32. . . Second variable resistor</p><p>33. . . capacitance</p><p>34. . . Operational Amplifier</p><p>35. . . resistance</p><p>51. . . Second amplifier module</p><p>51a, 52a. . . First resistance</p><p>51b, 52b. . . Second resistance</p><p>51c. . . Capacitor</p><p>51e, 52e. . . Operational Amplifier</p><p>51f, 52f. . . Detector</p><p>52. . . The third amplifier module</p><p>52c. . . First capacitor</p><p>52d. . . Second capacitor</p><p>61. . . The sixth embodiment of the first high-area-efficiency photosensitive transistor structure</p><p>61a, 71a. . . First source</p><p>61g, 71g. . . Amorphous silicon layer</p><p>61h, 71h. . . Oxide layer</p><p>71. . . Seventh Embodiment Second High Area Efficiency Photosensitive Transistor Structure</p><p>71c. . . First drain</p><p>71b. . . First gate</p><p>71e. . . Second gate</p><p>71d. . . Second drain</p><p>71f. . . Second source</p>

The left side of Figure 1 is a schematic diagram of the photo sensor array 1 of the first embodiment of the present invention; the center of Figure 1 is a schematic diagram of the first amplifier module 3 of the third embodiment of the present invention; the right side of Figure 1 is the second amplifier module of the fifth embodiment of the present invention The schematic diagram of the group 51 and the third amplifier module 52; the left side of Fig. 2 is the schematic diagram of the photo sensor array 2 according to the second embodiment of the present invention; Figure; Figure 3B is a top view of the first high-area-efficiency photosensitive transistor structure 61 of the sixth embodiment of the present invention; Figure 3C is a top view of the prior art low-area-efficiency photo-sensing element structure 62; Figure 4A is the first view of the present invention Seventh embodiment, cross-sectional view of the second high-area-efficiency photosensitive transistor structure 71; Fig. 4B is a top view of the second high-area-efficiency photosensitive transistor structure 71 of the seventh embodiment of the present invention; Fig. 4C is a prior art low-area-efficiency light sensor The top view of the test element structure 72.