Solid-state component device and manufacturing method thereof

Solid element device and manufacturing method thereof

The filing of this application is based on the following Japanese patent application numbers (2003-063015, 2003-160855, 2003-160867, 2003-193182, 2003-342705, 2003-342706, 2004-010385). These Japanese patent applications All the contents are imported into this application for reference.

The present invention relates to a solid component device that uses a glass material to seal an optical component, and particularly relates to a solid component device that uses a glass material with a low melting point as the glass material.

In the past, there is a solid element device that uses a light-transmitting resin material such as epoxy resin to seal a solid element such as a light-emitting diode. In this solid element device, the light-transmitting resin reacts to strong light and causes deterioration such as yellowing. . Especially when using a group III nitride compound semiconductor light-emitting device that emits short-wavelength light, the high-energy light emitted by the device and the heat of the device itself will cause the light-transmitting resin near the device to turn yellow, resulting in a comparable light extraction efficiency. The degree of reduction.

In order to prevent the deterioration of the sealing member, Japanese Patent Laid-Open Nos. 8-102553 and 11-177129 specially propose light-emitting devices using low melting point glass as the sealing member.

The light-emitting device described in JP 8-102553 A is a method that uses a sealing body 7 formed of transparent low-melting glass to cover the LED element, the wire bonding part (Wire Bonding), and the surrounding area above the lead part. constitute. Low melting point glass uses glass with selenium, thallium, arsenic, sulfur, etc., and the melting point is about 130 to 350 degrees Celsius. At this time, it is best to use low-melting glass with a melting point below 200 degrees Celsius (less than 150 degrees Celsius is better).

With the light-emitting device in JP 8-102553 Bulletin, the problems of epoxy resins can be avoided: that is, the bad or fragile characteristics caused by ultraviolet rays, which cause the sealing body to gradually turn yellow after a period of time.

In addition, according to the light-emitting device of JP 11-177129, the sealing body that covers the LED light-emitting element is made of a potassium nitride (GaN) series light-emitting element with a refractive index of about 2.3, which has a refractive index as low as about 2 Melt glass.

With the light-emitting device of JP 11-177129, when the low melting point glass close to the refractive index of the potassium nitride series LED light-emitting element is used to seal the LED light-emitting element, the surface of the LED light-emitting element is completely reflected and then folded back to the inside. The amount of light will decrease, but the amount of light emitted from the LED light-emitting element and then injected into the low-melting glass will increase; as a result, the luminous efficiency of the chip-type LED related to the present invention will be higher than that of the LED light-emitting element using epoxy resin The previous sealed LEDs have higher luminous efficiency.

However, the usual solid component devices that use low-melting-point glass as the sealing member have the following problems: Although it is low-melting-point glass, it must be processed at a high temperature, and because it is a hard material, if it is only an extension of resin sealing processing, in fact Can not successfully produce samples.

Therefore, the object of the present invention is to provide a solid element device and a manufacturing method thereof, to extract and solve the problems in the actual processing of inorganic materials, and then to achieve the expected effect by glass sealing.

In order to achieve the above object, the present invention provides a solid component device with the following characteristics: (1) a solid component mounted by flip chip, (2) receiving power from the solid component, and a power receiving and supplying part that supplies power to the solid component, (3) An inorganic sealing member that seals the solid element.

In addition, in order to achieve the above-mentioned object, the present invention also provides a solid element device, which is characterized by having the following parts: (1) a solid element, (2) receiving power from the solid element, and a power receiving and supplying portion that supplies power to the solid element, (3) A heat-resistant member covering the electrical connection portion of the solid element and the power receiving and supplying portion, and (4) an inorganic sealing member that seals the solid element including the heat-resistant member.

In addition, in order to achieve the above-mentioned object, the present invention also provides a solid component device with the following characteristics: (1) a solid component, (2) receiving power from the solid component, and a power receiving and supplying portion that supplies power to the solid component, (3) Glass sealing part: the low melting point glass used to seal the solid element is made of SiO₂-Nb₂O₅Department, B₂O₃-F series, P₂O₅-F series, P₂O₅-ZnO series, SiO₂-B₂O₃-La₂O₃Department, SiO₂-B₂O₃Select in the department.

In addition, in order to achieve the above-mentioned object, the present invention also provides a solid component device, which is characterized by having the following parts: (1) a solid component, (2) receiving power from the solid component, and supplying power to the metal lead part of the solid component, (3) Inorganic sealing material for sealing the solid component.

In addition, in order to achieve the above object, the present invention also provides a solid component device, which is characterized by having the following parts: (1) a solid component, (2) receiving power from the solid component, and a power receiving and supplying part that supplies power to the solid component, (3) Inorganic sealing member: an inorganic sealing material that seals the solid element and a part of the power receiving and supplying part, and has the same thermal expansion coefficient as the inorganic material substrate.

In addition, in order to achieve the above object, the present invention also provides a solid element device, which is characterized by having the following parts: (1) the installation step of installing the solid element to the power receiving and supplying part, (2) the sealing step: the use of oxygen to shut off the environment and At a temperature higher than the yield point of the inorganic sealing material, pressurize the inorganic sealing material and perform sealing processing.

Hereinafter, the light-emitting device related to the first embodiment of the present invention will be described in detail with reference to the drawings.

Fig. 1 is a light-emitting device related to the first embodiment of the present invention, (a) is a longitudinal sectional view of the light-emitting device, and (b) is a side view of a GaN-based LED element as a light source. The light-emitting device 1 has the following parts: (1) Flip-chip GaN-based LED element 2 as shown in Fig. 1(a), (2) Al containing glass component with GaN-based LED element 2 mounted₂O₃The substrate 3, (3) is made of tungsten (W), nickel (Ni), gold (Au), and Al₂O₃The circuit pattern 4 formed on the substrate 3, (4) Au stud bumps 5 that electrically connect the GaN-based LED element 2 and the circuit pattern 4, and (5) seal the GaN-based LED element 2 and Al containing glass component₂O₃P connected to substrate 3₂O₅-ZnO series glass sealing part 6.

As shown in Figure 1(b), the formation method of GaN-based LED element 2 is based on sapphire (Al₂O₃) The surface of the substrate 20 is sequentially formed with a buffer layer 21, an n-type layer 22, a layer including a light-emitting layer 23, and a p-type layer 24, and includes (1) a p-electrode 25 disposed on the surface of the p-type layer 24, (2) The n-electrode 26 formed on the exposed n-type layer 22 after removing part of the range from the p-type layer 24 to the n-type layer 22 by etching. The GaN-based LED element 2 grows epitaxially at a temperature exceeding 700°C, and has a heat-resistant temperature of 600°C or higher, and can be kept stable at the temperature when the low melting point glass is used for sealing processing as described below.

In addition, the p-electrode 25 has the function of a lower reflector that reflects the light emitted by the layer 23 including the light-emitting layer toward the direction of the substrate 20.

Al containing glass₂O₃The thermal expansion coefficient of substrate 3 is 12.3×10^-6/°C, and contains a through hole 3A; the through hole 3A uses a metalized W circuit pattern 4 to conduct conduction between the surface and the back of the substrate.

The glass seal 6 is made of P₂O₅-ZnO series low melting point glass (thermal expansion coefficient: 11.4×10^-6/°C, Yield point: 415°C, refractive index: 1.59, internal transmittance: 99% (470nm)). It is formed by hot press processing using a mold to make it compatible with Al containing glass₂O₃After the substrate 3 is combined, it is cut into a rectangle with a top surface 6A and a side surface 6B by a cutting machine.

Low melting point glass is processed under the condition that it is more viscous than the grade called high viscosity in general resin. Even if the yield point of glass exceeds tens of degrees, the viscosity will not be as good as that of general resin sealing. Still low. In addition, in order to achieve the viscosity of a general resin during molding, a temperature higher than the crystal growth temperature of the LED element is required, and it may adhere to the mold, making sealing and molding difficult. For this reason, it's best to use 10⁶Poise (Poise: unit of viscosity) or higher for processing.

The manufacturing method of the light-emitting device 1 will be described below.

First, prepare Al with glass component with through hole 3A₂O₃Substrate 3, and based on Al containing glass₂O₃The circuit pattern on the substrate 3 is screen printed with tungsten glue (Paste); secondly, Al with glass component will be printed with tungsten glue₂O₃The substrate 3 is heat-treated at more than 1000° C., the tungsten paste is burned onto the substrate 3, and then nickel (Ni) and gold (Au) are plated on the W to form the circuit pattern 4. Next, use gold bumps 5 to combine the GaN-based LED element 2 with the Al₂O₃The circuit pattern 4 (surface side) of the substrate 3 is electrically connected. Secondly, the plate-shaped P₂O₂-ZnO series low melting point glass and Al containing glass component equipped with GaN-based LED element 2₂O₃The substrate 3 is placed in parallel, and then hot-pressed in nitrogen at a pressure of 60 kgf and a temperature of 465°C. The viscosity of the low melting point glass under this condition is 10⁸~10⁹Poise, low melting point glass and Al containing glass components₂O₃The substrate 3 is connected together through the oxide contained therein. Secondly, it will integrate with the low melting point glass to contain the glass component Al₂O₃The substrate 3 is placed in a cutting machine for cutting, and the rectangular light-emitting devices are separated.

With this first embodiment, the following effects can be obtained.

(1) When using low-melting point glass for hot pressing in a high-viscosity state, it can be processed at a temperature much lower than the crystal growth temperature.

(2) Through oxide, Al containing glass component₂O₃When the substrate 3 and the glass sealing portion 6 are chemically bonded together, a stronger sealing strength can be obtained. Therefore, even a small package with a small bonding area can achieve the goal.

(3) Sealing glass and Al containing glass components₂O₃The thermal expansion coefficient of the substrate 3 is the same. Therefore, after bonding at high temperature, even at normal temperature or low temperature, peeling, chipping, etc. will not easily occur. Moreover, the glass is not easily broken due to tensile stress, and the compressive stress is not easy to break it. The sealing glass uses Al which contains more glass components.₂O₃The substrate 3 has a material with a small coefficient of thermal expansion. According to the results confirmed by the inventors, the liquid phase thermal shock test at -40°C 100°C for 1000 cycles, no peeling and chipping occurred. In addition, in order to confirm the bonding basis of a glass sheet with a size of 5mm×5mm and a ceramic substrate, the results of experiments with various combinations of thermal expansion coefficients of glass and ceramic substrates show that the thermal expansion coefficient of the material with the lower coefficient of thermal expansion is relative to that of the higher material. When the ratio is above 0.85, joints without chipping can be achieved. Although the above results depend on the rigidity and size of the material or the stress absorbing layer of the eighth embodiment, the so-called thermal expansion coefficient is the same as the range of the above degree.

(4) When using flip chip bonding, since there is no need for a wire, even if it is processed in a high-viscosity state, the electrode will not be defective. The viscosity of low melting point glass during sealing process is 10⁸To 10⁹Compared with the liquid state of about 5 poises of epoxy resin before thermosetting, the hardness of the poise is very different. It is aimed at the upward type that electrically connects the electrode on the surface of the component with the power supply material such as the lead wire. When the LED element is sealed, the wire will be crushed and deformed during the glass sealing process. This invention can prevent this. In addition, when sealing flip-chip LED components where electrodes on the surface of the component and power supply materials such as lead wires are bonded through bumps such as gold, the viscosity of the glass will exert a pressure on the LED toward the power supply material. This may cause the bumps to collapse or short-circuit between bumps, etc. However, the above-mentioned defects can be prevented by the present invention.

(5) Combine low melting point glass with Al containing glass components₂O₃The substrate 3 is placed in parallel, and hot pressing is performed in a high viscosity state. The low melting point glass will move in parallel to the Al containing the glass component.₂O₃The surface of the substrate 3 is in close contact with it, and since the GaN-based LED element 2 is sealed, no void is generated.

(6) Al containing glass component₂O₃The wiring circuit pattern 4 of the substrate 3 is pulled out to the back at the through hole 3A, so there is no need to take special measures for entering the place where no glass is needed or the electric terminal is covered, etc., only the plate-shaped low melting point By spotting glass and sealing multiple devices at the same time, multiple light-emitting devices 1 can be mass-produced using a cutting machine. In addition, because the low-melting point glass is processed in a high-viscosity state, there is no need to take special measures like when using resin. Even if it does not rely on through holes, as long as the external terminals are pulled out to the back side, mass production is possible.

(7) When the GaN-based LED element 2 is mounted on the flip chip, it can not only overcome the problems in the realization of glass sealing, but also has the effect of realizing the ultra-small light emitting device 1 of 0.5mm×0.5mm; because there is no need to connect Bonding space of the wire, and the glass sealing part 6 and the Al containing glass component₂O₃The substrate 3 can be selected from materials with the same thermal expansion coefficient, and by using a strong bonding method of chemical bonding, even if the contact area is small, the interface will not be peeled off.

Fig. 2 is a first modification of the light-emitting device related to the first embodiment, in which (a) is a cross-sectional view of the light-emitting device, and (b) is a side view of a GaN-based LED element as a light source. The following uses the same reference number to explain the common components.

The light-emitting device 1 differs from the first embodiment in the following configuration: (1) The upward-type GaN-based LED element 2 is combined with the circuit pattern 4 in a flip-chip manner, and (2) a protective GaN-based LED is provided The electrode of element 2 and the white color of the gold bump 5 are filled with glue 7.

Filler 7 can use a filler with good light reflectivity such as boron nitride (BN: Boron Nitride), and the GaN-based LED element 2 is preliminarily poured into Al containing glass component before bonding.₂O₃On the substrate 3, the GaN-based LED element 2 is bonded by a flip chip method.

As shown in FIG. 2(b), the GaN-based LED element 2 has (1) a translucent electrode 27 such as ITO (Indium Tin Oxide) provided on the surface of the p-type layer 24, and (2) a translucent electrode 27 provided on the surface of the p-type layer 24. P-electrode 25 on the surface.

According to this first modification, even with the upward-type GaN-based LED element 2, the encapsulant 7 can be used to radiate the reflected and diffused light from the substrate 20 of the GaN-based LED element 2, thereby improving the light extraction rate. In addition, in the second embodiment, the white type sealant 7 is selected to improve the light extraction efficiency, but if the light extraction efficiency is not important, the sealant 7 of colors other than the white series can also be used.

For the second deformed part, a surface treatment method that improves moisture resistance and acid and alkali resistance can be used on the surface of the glass sealing part 6. At this time, the effective treatment method is MgF₂, SiO₂, SiN; In addition, it is also possible to reduce the reflection of the interface by a multilayer film that prevents reflection. In this case, use TiO₂+SiO₂Multi-layer coating is more effective.

The third modification of FIG. 3 is a longitudinal cross-sectional view of a light-emitting device using another encapsulant. The light-emitting device 1 of the third modification uses diamond with good thermal conductivity as the encapsulant 7 for protecting the electrodes of the GaN-based LED element 2 and the gold bumps 5. In addition, other sealing compounds 7 with good thermal conductivity can also be used: such as BN, aluminum nitride (AlN), silicon carbide (SiC); the above materials are mixed with heat resistance in the form of filler (Filler) with an average particle size of several microns Ceramic coating materials.

The fourth modification of Fig. 4 is a longitudinal cross-sectional view of a light emitting device provided with a molded part made of a resin material. In this light-emitting device 1, the light-emitting device 1 described in the first embodiment is joined to the lead frame 8, and a mold forming part made of epoxy resin as a whole is provided.

The mold forming part 9 has a hemispherical optically shaped surface 9A, which is formed by a transfer molding method.

With the above structure, not only the optical part can be easily formed on the glass sealed device, but also the Al containing glass component₂O₃The substrate 3 and the glass sealing part 6 are further surrounded by the mold forming part 9 to improve moisture resistance. In addition, in addition to epoxy resin, the mold forming part 9 may also be formed of silicone resin; in addition to the injection molding method, molding methods such as injection mold molding may also be used; in addition, acrylic or polycarbonate may also be used. Resin materials such as ethyl (Poly Carbonate) are formed by the injection method. In this case, productivity can be improved.

In addition, the mold forming part may also contain a phosphor, and the phosphor may use YAG phosphor, phosphonate phosphor, or mix the above phosphors in a specific ratio.

Fig. 5 is a longitudinal cross-sectional view of a light-emitting device related to the second embodiment. The difference between the light-emitting device and the light-emitting device of the first embodiment is: (1) SiO is provided₂-Nb₂O₅The glass sealing part 6 is constructed to replace the glass material in the first embodiment, (2) In the Al containing glass component₂O₃On the substrate 3, an Ag series circuit pattern 4 is provided.

SiO₂-Nb₂O₅Series glass sealing part 6 is made of SiO₂-Nb₂O₅Low melting point glass (thermal expansion coefficient: 12.1×10^-6/°C, yield point: 507°C, refractive index: 1.69, internal transmittance: 98% (470nm)), which is formed by hot pressing with Al containing glass component₂O₃After the substrate 3 is combined, a cutting machine is used to form a rectangle with a top surface 6A and a side surface 6B.

Al containing glass₂O₃The thermal expansion coefficient of substrate 3 is 12.3×10^-6/°C, and has a through hole 3A; the through hole 3A conducts the Ag circuit pattern 4 formed by electrolytic plating on the surface and the back of the substrate.

With this second embodiment, when SiO is used₂-Nb₂O₅The series of low melting point glass can reduce moisture permeability and increase the light extraction rate; in addition, when using low melting point glass with low moisture permeability, it has the following advantages: for example, GaN-based LED components are made by flip chip The circuit pattern during installation is like a circuit pattern. When a voltage is applied and the pattern interval is several tens of microns, even if it is resin-sealed, there will be migration problems and difficulties in application. Ag, which is a material with high reflectivity, can also be used.

6 is a longitudinal sectional view of a light-emitting device related to the third embodiment of the present invention. The light-emitting device 1 has the following parts: (1) an upward-type GaN-based LED element 2, and (2) a GaN-based LED element is mounted 2 of Al containing glass component₂O₃Substrate 3, (3) made of W and formed on Al containing glass₂O₃The circuit pattern 4 on the substrate 3, (5) the gold bump 5 that electrically connects the GaN-based LED element 2 and the circuit pattern 4, and (6) the Au bump that electrically connects the GaN-based LED element 2 and the circuit pattern 4 The connection 10, (7) The heat-resistant inorganic material coating 11 that surrounds the GaN-based LED element 2, the connection 10, the circuit pattern 4, etc., and is coated with the film 11, (8) Inorganic white that connects the GaN-based LED element 2 and the circuit pattern 4 Adhesive 12, (9) Sealing and containing glass component Al₂O₃P followed by substrate 3₂O₅-ZnO series glass sealing part 6.

The heat-resistant inorganic material coating 11 is a transparent and porous SiO₂Series hard coating (Hard Coat), can prevent the connection 10 in P₂O₅-ZnO series glass is deformed during the sealing process.

The inorganic white adhesive 12 reflects the light radiated from the GaN-based LED element 2 to the substrate side, and then radiates it from the electrode forming surface.

The method of manufacturing the light-emitting device 1 will be described below.

First, prepare Al with glass component with through hole 3₂O₃Substrate 3, and based on Al containing glass₂O₃The circuit pattern on the substrate 3 will be screen-printed with W (tungsten) glue (Paste); secondly, the glass-containing Al with tungsten glue will be printed₂O₃The substrate 3 is heat-treated at more than 1500° C., the tungsten paste is burned onto the substrate 3, and then nickel (Ni) and gold (Au) are plated on the W to form the circuit pattern 4. Secondly, use the inorganic white adhesive to combine the GaN-based LED element 2 with the Al₂O₃The circuit pattern 4 (surface side) on the substrate 3 is bonded. Secondly, the p-electrode and n-electrode of the GaN-based LED element 2 and the circuit pattern 4 are electrically connected by the connection line 10;₂Department of coating material potting (Potting). Secondly, heat treatment at 150° C. is applied to form a porous heat-resistant inorganic material coating 11. Secondly, P₂O₅-ZnO series low melting point glass and Al containing glass component equipped with GaN-based LED element 2₂O₃The substrate 3 is placed in parallel, and then subjected to hot press (Hot Press) processing at a pressure of 60 kgf and a temperature of 415°C. Secondly, it will be integrated with the low melting point glass and containing the glass component Al₂O₃The substrate 3 is placed in a dicing machine (Dicer) for dicing, and the rectangular light-emitting device 1 is separated.

With this third embodiment, when the connection 10 is coated with a heat-resistant inorganic material coating 11 having light transmittance, it is possible to perform P with a high yield for the GaN-based LED element 2 to which the connection is bonded.₂O₅-ZnO series low melting point glass is processed for glass sealing, and the glass sealing type light-emitting device 1 is specifically implemented.

In addition, although the heat-resistant inorganic material coating 11 is not provided, the glass sealing process can still be achieved, but the deformation of the connection line 10 cannot be avoided, which is prone to electrical short circuit, which reduces the yield. In addition, except for the GaN-based LED element 2 In addition to the damage of the ball-shaped joint of the gold wire 10 and easy electrical short circuit, the film-like Au covering the surface of the device is likely to cause problems such as hindering the extraction of light.

7 is a longitudinal cross-sectional view of a modification of the light-emitting device related to the third embodiment. The light-emitting device 1 uses an AlInGaP series LED element 2 with electrodes on the upper and lower sides of the element. The components are different from those of the third embodiment.

In the AlInGaP series of LED components 2, the top electrode is electrically connected to the circuit pattern 4 through a wire 10, and the bottom electrode is electrically connected to the circuit pattern 4 through a silver paste (Ag Paste).

For the LED element with electrodes on the top and bottom surfaces, heat-resistant inorganic material coating is applied, and P₂O₅-ZnO-based low-melting-point glass can be used for glass-sealed light-emitting devices with high yields under the conditions of glass-sealing processing.

Fig. 8 is a longitudinal cross-sectional view of a light-emitting device related to the fourth embodiment. The light-emitting device 1 is formed by scribing the GaN-based LED element 2 used in the first embodiment. element. The LED element 2 formed by the cutting process has a concavo-convex structure on the side surface of the cut portion, and the side surface is covered with the element coating material 14.

The element coating material 14 can use, for example, SiO₂Series of coating materials, coated with SiO₂The coating material is used to cover the side surface of the GaN-based LED element 2, and then heat treatment at 150°C to harden it.

The fourth embodiment can achieve the following effects: Scribe processing is likely to cause cracks or voids in the sharp concave and convex parts of the GaN-based LED element 2; After covering and making it smoother, it not only prevents chipping, but also suppresses the occurrence of voids.

9 is a longitudinal cross-sectional view of a first modification of the light-emitting device related to the fourth embodiment. In the light-emitting device 1, SiO₂The device coating material 14 composed of a series of coating materials covers the entire GaN-based LED element 2 in a configuration that is different from the fourth embodiment.

The thermal expansion coefficient of the element coating material 14 is between the thermal expansion coefficient of the GaN-based LED element 2 and P₂O₅-The thermal expansion coefficient of ZnO series low-melting glass is intermediate, so even when glass with a large thermal expansion coefficient or large-size LED components are used, it can prevent chipping.

With this first modification, not only the cracks or voids caused by the surface shape of the GaN-based LED element 2 can be suppressed, but also the occurrence of cracks caused by the difference in thermal expansion coefficient between the GaN-based LED element 2 and the low-melting glass can be prevented. In addition, from the viewpoint of light extraction properties in the GaN-based LED element 2, the thinner the element coating material 14 is, the better.

10 is a longitudinal cross-sectional view of a second modification of the light-emitting device related to the fourth embodiment. In the light-emitting device 1, a phosphor layer 15 containing a phosphor covers the entire periphery of a GaN-based LED element 2 The structure is different from the fourth embodiment.

The composition of the phosphor layer 15 is: SiO used in the first modification₂The element coating material 14 made of coating material plus the YAG phosphor as the phosphor; in this case, the phosphor can be one type or a mixture of multiple types of phosphors. In addition, it is also possible to use a sulphate phosphor, and even a YAG type phosphor and a sulphate phosphor can be mixed in the phosphor layer.

With this second modification, in addition to the good effects of the first modification, since the glass seal blocks external moisture from the outside of the phosphor, the degradation of the phosphor can be prevented, and stable wavelength conversion properties can be obtained for a long period of time.

Fig. 11 is a light-emitting device related to a fifth embodiment, in which (a) is a top view of the light-emitting device, (b) is a side view of the light-emitting device, and (c) is a bottom view of the light-emitting device. The light-emitting device 1 has the following parts: (1) a plurality of flip chip type GaN-based LED elements 2, (2) a square-shaped multilayer structure equipped with GaN-based LED elements 2 containing glass component Al₂O₃Substrate 3, (3) on Al containing glass component₂O₃A circuit pattern 4 formed of tungsten (W) on the surface and layer of the substrate 3 (the pattern on the surface of the substrate is plated with nickel and gold), (4) a gold bump that electrically connects the GaN-based LED element 2 and the circuit pattern 4 Block 5, (5) Seal the GaN-based LED element 2 and mix it with Al₂O₃P connected to substrate 3₂O₅-ZnO series glass sealing part 6, (6) in Al containing glass component₂O₃In the four corners of the substrate 3, the bottom circuit patterns 16A (anode) and 16C (cathode) exposed from the middle layer of the inner layer, (7) a heat radiation pattern 17 made of copper foil that radiates the heat of the GaN-based element 2 to the outside ; A total of 9 GaN-based LED elements 2 of 3 by 3 are arranged on the circular circuit pattern 4 formed on the surface of the substrate through the gold bumps 5.

Al containing glass₂O₃The substrate 3 has a multilayer structure of inner wiring made of tungsten, and three GaN-based LED elements 2 in the column direction shown in FIG. 11(b) are connected in series to form an element group, and the anode of the element group and the bottom circuit pattern One of 16A is connected, and the cathode of the component group is connected to the bottom circuit pattern 16C. In addition, the cathode is also connected to the cathodes of the element groups formed on the other two rows.

With this fifth embodiment, even if a plurality of GaN-based LED elements 2 are used, when a ceramic multilayer substrate is used, series and parallel circuits can be easily formed, and wiring arrangement during electrolytic plating can be easily completed. In addition, when the external electrical connection terminal is taken out from the intermediate layer and the metal pattern for heat dissipation is placed on the bottom surface, the heat generated by the 9 GaN-based LED elements 2 that are closely mounted when emitting light can be quickly transferred by the metal pattern for heat dissipation. Lead to heat sink (HEAT SINK).

12 is a longitudinal cross-sectional view of a first modification of the light-emitting device related to the fifth embodiment, the light-emitting device 1 in P₂O₅The phosphor layer 15 is provided on the surface of the ZnO-based glass sealing portion 6 as a wavelength conversion type light-emitting device, which is different from the fifth embodiment.

With this first modification, since P₂O₅-The ZnO-based glass sealing portion 6 is provided with a phosphor layer 15 that surrounds the entire GaN-based LED element 2, so that a white light-emitting device 1 with high light output can be realized. In addition, in the multi-element type light-emitting device 1, even if the characteristics of each element are different, the difference is not significant. Therefore, the light-emitting device 1 with uniform light-emitting characteristics can be realized.

13 is a longitudinal cross-sectional view of a second modification of the light-emitting device related to the fifth embodiment. The difference between the light-emitting device 1 and the fifth modification is: a flip-chip GaN-based LED element that emits blue or green light 2 It is mixed with the upper and lower electrode type AlInGaP LED elements that emit red light. 2 Two elements are mixed, and P₂O₅-The ZnO-based glass sealing portion 6 is sealed. The AlInGaP-based LED element 2 together with the wiring 10 is surrounded by a heat-resistant inorganic material coating 11.

With this second modification, even if the flip-chip type and the upper and lower electrode type LED elements are mixed, the P₂O₅-ZnO series low melting point glass is sealed and processed, and the combination of the luminous color of the LED element 2 can be set arbitrarily.

14 is a cross-sectional view of a light-emitting device related to the sixth embodiment. The light-emitting device 1 has the following parts: (1) AlInGaP-based LED elements 2 with electrodes above and below the element, (2) AlInGaP-based LED elements mounted 2 of Al containing glass component₂O₃Substrate 3, (3) is made of tungsten and formed on Al containing glass component₂O₃The circuit pattern 4 on the substrate 3, (4) is electrically connected to the electrode of the AlInGaP-based LED element 2 and the circuit pattern 4, a wire 10 formed of gold, (5) surrounds the AlInGaP-based LED element 2, the wire 10, Circuit pattern 4 and coating made of TiO₂(Refractive index 2.4) composed of high refractive index material coating 11A, (6) AlInGaP LED element 2 and circuit pattern 4 are connected and electrically connected with silver glue 13, (7) will be surrounded by high refractive index material coating 11A AlInGaP-based LED components 2 are sealed and combined with Al₂O₃SiO bonded to substrate 3₂-Nb₂O₅TieGlass sealing part 6.

SiO₂-Nb₂O₅The glass sealing part 6 is made of SiO₂-Nb₂O₅Low melting point glass (thermal expansion coefficient: 10.2×10^-6/°C, yield point: 543°C, refractive index: 1.92, internal transmittance: 81% (470nm) or 91% (thickness 10mm)), which has a hemispherical optical shape surface 6D; it will be made of AlInGap system The light emitted by the LED element 2 passes through the high refractive index material coating 11A, and enters the glass interface slightly perpendicularly, and then radiates outward after the interface reflection is minimized as much as possible. In addition, when the light emitted from the AlInGaP-based LED element 2 enters at an angle smaller than the critical angle between the interface between the AlInGaP-based LED element and the glass sealing portion 6, the optical shape surface 6D may also have a shape other than a hemispherical shape. Specifically, it may be Hexahedron or octahedron.

With this sixth embodiment, since the AlInGaP-based LED element 2 is made of TiO with a refractive index of 2.4₂The high refractive index material coating 11A is surrounded by SiO with a refractive index of 1.92₂-Nb₂O₅The glass sealing part 6 is used for sealing, so it is possible to suppress the high refractive index material 11A and SiO₂-Nb₂O₅The interface reflection loss at the interface of the glass sealing part 6 improves the light extraction efficiency of the LED element of the high refractive index medium.

In addition, due to SiO₂-Nb₂O₅The glass sealing part 6 is formed in a convex shape, and the AlInGaP LED element 2 is incident on the interface between the glass sealing part 6 and the air at a vertical incident angle, so that high external radiation efficiency can be obtained.

15 is a first modification of the light-emitting device related to the sixth embodiment, in which (a) is a longitudinal sectional view of the light-emitting device, (b) is a side view of the GaN-based LED element of the light source; the light-emitting device 1 The composition is based on a GaN-based LED element 2 with a SiC substrate 29 instead of the AlInGaP-based LED element 2, and SiO₂-Nb₂O₅The surface of the glass sealing portion 6 has an optically shaped surface 6D, and the optically shaped surface 6D is configured with SiO with a thickness of 1/4 wavelength₂The above is the difference between the film 6E and the sixth embodiment.

The SiC substrate 29 has an n electrode 26 on the bottom surface, and is electrically connected to the circuit pattern 4 through the silver paste 13.

According to the first modification, since the optical shape surface 6D is provided with SiO with a thickness of 1/4 wavelength₂Film 6E, SiO₂The film interferes with the light guided to the optical shape surface 6D, so the reflection can be reduced.

Fig. 16 is a second modification of the light-emitting device related to the sixth embodiment, in which (a) is a longitudinal cross-sectional view of the light-emitting device, and (b) is a side view of a GaN-based LED element of a light source. The light-emitting device 1 differs from the sixth embodiment in that a flip-chip GaN-based LED element 2 with a GaN substrate 30 is used instead of the AlInGaP-based LED element 2.

With this second modification, since the GaN-based LED element 2 with the GaN substrate 30 is used, no interface reflection occurs inside the LED element, so light can be efficiently guided to the surface of the substrate; The light on the surface of the substrate is transmitted through SiO₂-Nb₂O₅The glass sealing portion 6 radiates to the outside from the optical spherical surface 6D, so a high external radiation efficiency can be obtained.

Fig. 17 is a light-emitting device related to a seventh embodiment, in which (a) is a longitudinal cross-sectional view of the light-emitting device, and (b) is a side view of a GaN-based LED element as a light source. The light-emitting device 1 uses Al₂O₃Replace Al containing glass component₂O₃As a substrate and used with Al₂O₃The sealing glass material with equivalent thermal expansion coefficient, the above is the difference from the sixth embodiment. Fig. 17 shows the state before being cut into individual devices at the same time. As shown in Fig. 17(a), each light-emitting device 1 has the following parts: (1) flip chip GaN-based LED element 2, (2) mounted Al of GaN-based LED element 2₂O₃Substrate 3, (3) formed in Al₂O₃The circuit pattern 4 on the substrate 3, (5) the gold bump 5 that electrically connects the GaN-based LED element 2 and the circuit pattern 4, (6) seals the Gan-based LED element 2 and connects it with Al containing glass₂O₃B of substrate 3 connection₂O₃-F series glass sealing part 6.

As shown in (b), in order to prevent GaN-based B₂O₃-Damage of the gold bump 5 or short circuit between circuits occurred during the sealing process of F series glass, the GaN-based LED element 2 will interact with Al₂O₃Filler (filler 1) 7 is added between the substrates 3.

Al₂O₃The substrate 3 has a through hole 3, and through the through hole 3, there is an electrical connection with the circuit patterns 4 on the surface and the back surface, and grooves 3B at the cutting position of the substrate are formed at a certain interval.

The circuit pattern 4 on the surface on which the GaN-based LED element 2 is mounted has improved₂O₃-The adhesive strength of the F series glass seal 6 uses the adhesive patterns 4A, 4B, and the adhesive pattern 4B is also taken out to Al₂O₃A part of the circuit pattern 4 on the back of the substrate 3.

B₂O₃-F series glass sealing part 6 by B₂O₃-F series low melting point glass (thermal expansion coefficient: 6.9×10^-5/°C, yield point: 539°C, refractive index: 1.75, internal transmittance: 98% (470nm)), and hot press processing for preform glass (the preform glass is provided with pre-processed Way, the optical shape surface 6D and the thin meat part 6B) are pre-installed to make it compatible with Al₂O₃The surface of the substrate 3 is bonded. The thickness of the thinner part 6B is formed based on the thickness at which the adjacent light-emitting device 1 will not be broken or damaged when the gravity is applied to the scribe processing part for cutting.

The light-emitting device 1 is equipped with GaN-based LED elements 2 and marked with B₂O₃-After sealing the F series glass sealing part, the Al₂O₃After the groove 3B of the substrate 3 is used as the dividing position and weight is applied, Al₂O₃The substrate 3 is broken due to stress concentration, and at the same time, the thinner part B of 6B₂O₃-The F-based glass sealing portion 6 is cut.

With the seventh implementation type, the commonly used Al is used₂O₃In the case of the substrate 3, the white light absorption is relatively high and the light extraction efficiency can be improved; it is not only easy to obtain, but also very cheap. In addition, since gravity is applied to the part to be cut and cut into individual light-emitting devices 1, mass productivity is good. When each light-emitting device 1 is formed by cutting, the skew stress will remain on the glass after cutting with a cutting machine. B₂O₃-F type glass sealing part may have cracks; however, the light-emitting device 1 which is cut by splitting has less residual skew stress and is less prone to cracks and other defects.

In addition, B₂O₃-Low melting point glass other than F series can also use SiO₂-B₂O₃-La₂O₃Low melting point glass (thermal expansion coefficient: 8.3×10^-6/°C, Yield point: 559°C, refractive index: 1.81, internal transmittance: 99% (470nm)).

In addition, in other division methods than division, laser light can also be used for division.

FIG. 18 is a longitudinal sectional view of a first modification of the light-emitting device related to the seventh embodiment. The difference between the light-emitting device 1 and the seventh embodiment is: by B₂O₃-F series low melting point glass forms B₂O₃-F series glass sealing part 6.

B₂O₃-F series SiO₂-B₂O₃The glass seal 6 is in contact with Al₂O₃The groove 3B formed on the substrate 3 has a line drawing part 6C at the relative position. When gravity is applied, the line drawing part 6C and the groove 3B are linked and the stress is concentrated.₂O₃-F series glass seal 6 and Al₂O₃The substrate is divided into 3 parts.

With this first modification, since there is no need to change B₂O₃-F-series glass sealing part 6 is pre-formed, so the manufacturing process can be simplified, which is beneficial to production.

In addition, SiO can also be used₂-B₂O₃-F-series low-melting-point glass is used as the low-melting-point glass of the glass sealing part 6.

19 is a light-emitting device related to the eighth embodiment, in which (a) is a longitudinal sectional view of the light-emitting device, (b) is a side view of the GaN-based LED element of the light source; this embodiment and the seventh embodiment The difference is that the light-emitting device 1 has the following parts: (1) BN filler 7 with good thermal conductivity under the GaN-based LED element 2, (2) AlN substrate 3 with the GaN-based LED element 2, (3) The GaN-based LED element 2 is sealed and connected to the AlN substrate 3, followed by SiO with the same thermal expansion coefficient as AlN₂-B₂O₃-F series glass sealing part 6.

SiO₂-B₂O₃-F series glass sealing part 6 series made of SiO₂-B₂O₃Low melting point glass (thermal expansion coefficient: 4.9×10^-6/°C, yield point: 558°C, refractive index: 1.61, internal transmittance: 96% (380nm)), its thermal expansion coefficient and that of GaN-based LED element 2: 5×10^-₆/°C is equivalent.

With the eighth implementation mode, the heat generated by the GaN-based LED element 2 emits light through the thermally conductive filler 7 and the gold bumps 5, resulting in the AlN substrate 3 of high heat-emitting material, and is efficiently released to the outside . In addition, due to GaN-based LED elements 2, AlN substrate 3, SiO₂-B₂O₃-The thermal expansion coefficients of the main materials of the F-based glass sealing portion 6 are almost the same, so there will be no peeling or reduced sealing performance caused by different thermal expansion coefficients.

For example, even if the thermal expansion coefficients of the main materials are different, by providing a structure with a stress-relieving effect, it can absorb internal stress and prevent a decrease in sealing performance or peeling.

20 is a longitudinal cross-sectional view of a modification of the light-emitting device related to the eighth embodiment. The light-emitting device 1 differs from the seventh embodiment in that it is on the surface of the circuit pattern 4 on which the GaN-based LED element 2 is mounted Equipped with a soft metal layer for the purpose of absorbing internal stress.

Figure 21 (a) to (e) are the steps of forming a circuit pattern on an AlN substrate. First, as shown in Figure (a), preliminarily place the through holes 3A on both sides of the AlN substrate 3, according to the circuit pattern net Adhesive containing tungsten is printed on the board; secondly, the AlN substrate 3 is grilled at a temperature exceeding 1500°C, and the tungsten (W) is burned on. In this way, the tungsten and the AlN substrate 3 are strongly combined, and the tungsten can also be formed by sputtering. In addition, high melting point metals such as Mo can also be used instead of tungsten. Next, as shown in (b), a nickel (Ni) layer is arranged on the circuit pattern 4 on the surface of the AlN substrate 3 by electroplating. Next, as shown in (c), the AlN substrate 3 is heated at 700° C. to cause nickel and tungsten to react; thereby, the circuit pattern 4 is strongly bonded to the AlN substrate 3. Next, as shown in (d), a gold (Au) layer 4C is formed on the surface of the circuit pattern 4 by electrolytic plating. Next, as shown in (e), the gold bump 5 is used to mount the GaN-based LED element 2 to a predetermined position.

In this way, for the AlN substrate 3 on which the GaN-based LED element 2 is mounted on the circuit pattern 4, the SiO₂-B₂O₃The low-melting-point glass is hot-pressed and then divided into light-emitting devices 1.

With this modification, the strong circuit pattern 4 can be joined to the AlN substrate 3, and by setting (1) the gold pattern (Ag Pattern) 4C: the GaN-based LED element 2 is mounted on the circuit pattern 4 through the gold bumps Above, (2) Nickel pattern 4A: Both for the purpose of joining with low melting point glass, conductive bump loading can be realized and stress can be alleviated. In addition, glass is bonded through oxide. Although it cannot be bonded to gold, it is bonded to nickel through a nickel oxide film on the surface of the nickel. In addition, it also has good bonding with glass and AlN. The AlN substrate has a high degree of thermal conductivity, which makes the GaN-based LED element 2 easy to produce a temperature difference with the glass after lighting, but even in this case, the elastic deformation of the gold layer 4C will relax the stress, and stable glass sealing performance can be obtained .

Fig. 22 is a longitudinal cross-sectional view of a light-emitting device related to the ninth embodiment. The light-emitting device 1 has the following parts: (1) flip chip GaN-based LED element 2; The loading base 18, (3) the circuit pattern 4 made of tungsten and formed on the AlN sub-loading base, (4) the lead 19 made of copper alloy with the step portion 19A on which the AlN sub-loading base is mounted, (5) The gold bump 5 that electrically connects the GaN-based LED element 2 and the circuit pattern 4, (6) P that surrounds the GaN-based LED element 2 and the lead 19 and seals the whole₂O₅-F series glass sealing part 6.

The AlN sub-loading base 18 has a metalized circuit pattern.

P₂O₅-F series glass sealing part 6 is made of P₂O₅-F series low melting point glass (thermal expansion coefficient: 16.9×10^-6/°C, yield point: 363°C, refractive index: 1.54, internal transmittance: 99% (470nm)), and hot pressing is used to form an optical shape surface 6D, which is a hemispherical surface, and The light is radiated to the desired radiation range.

The method of hot pressing is to combine 2 pieces of P₂O₅-F series low melting point glass is placed in parallel by clamping the lead 19 formed on the lead frame. It is carried out in nitrogen at a pressure of 10kgf and above 140°C. The viscosity of the low melting point glass under this condition is 10⁸To 10⁹Moor.

FIG. 23 shows the state when the lead frame is sealed by hot pressing. The figure also shows the state of the lead frame 31 made of a plate-shaped copper alloy with a pair of leads 311 pulled out in one direction. The lead frame 31 has the following parts: (1) the lead wire 311 of the AlN sub-loading base 18 is fixed, (2) the opening 312 arranged on the supporting side of the lead wire 311, (3) the small hole 313 which absorbs the thermal deformation of the lead frame (4) The positioning hole 314 for positioning the transfer position of the lead frame 31; the lead wire 311 is removed as an opening 310 when the plate-shaped copper alloy is punched.

The method of manufacturing the light-emitting device 1 will be described below.

First, the lead frame 31 with the lead 19 is formed, and the step portion 19A on which the AlN sub-mounting base 18 is mounted is formed on the lead frame 31; secondly, the lead frame 31 is combined with the AlN sub-mounting base 18 on which the circuit pattern 4 is formed . Next, the circuit pattern 4 provided on the surface of the AlN submount base 18 and the GaN-based LED element 2 are flip-chip bonded through the gold bump 5. Secondly, P₂O₅-F series low melting point glass is placed in parallel above and below the lead frame 31. Secondly, use a mold not shown in the figure, for P₂O₅-F series low melting point glass is hot pressed. Take P₂O₅-F system low melting point glass is formed separately (1) Thinner part 6B formed by hot pressing, (2)P₂O₅-F series glass sealing part 6. Next, the leads 311 are cut to separate them from the lead frame 31 to form individual light-emitting devices.

With this ninth embodiment, the following effects can be obtained.

(1) Since P is used₂O₅-F-based low-melting-point glass is hot-pressed in a high-viscosity state, so the glass can be sealed at a temperature lower than the crystal growth temperature.

(2) Since the hot pressing process is performed in nitrogen, the materials are not easily oxidized.

(3) Since the two pieces of glass are placed by clamping the lead, it can be sealed in a high-viscosity state.

(4)P₂O₅-F-based low-melting point glass has the same coefficient of thermal expansion as copper alloy leads, so it is not prone to peeling, chipping and other poor bonding. In addition, even if the thermal expansion coefficient is different, the internal stress will be absorbed by the plasticity of the soft metal copper. In the first to eighth embodiments, a ceramic substrate formed with a circuit pattern is used as a means of power supply, but generally available ceramic substrates have a low thermal expansion coefficient and a low melting point glass. Although there is not necessarily a direct correlation, materials with weaker intermolecular bonds have the characteristics of low melting points and larger thermal expansion coefficients. In contrast, when metal leads are used as power supply means, even if the coefficient of thermal expansion is greater than 15×10^-6The glass with a lower melting point above /°C can also realize the light-emitting device 1. In addition, when choosing a low-melting-point glass with a large thermal expansion coefficient, since the thermal expansion coefficient difference between it and the GaN-based LED element becomes larger, it is better to take countermeasures against the difference at the same time.

(5) Due to the flip-chip installation, the electrode part is not easily damaged.

(6) It has a structure that is not easy to break due to the difference in thermal expansion coefficients between materials. That is, a step corresponding to the shape of the AlN sub-loading base is formed on the lead, and the stress relaxation in the length direction of the AlN sub-loading base can be achieved by the plasticity of the soft metal lead. In addition, tensile stress is likely to cause glass to break, but compressive stress is not easy to break. The GaN-based LED element with a small thermal expansion coefficient surrounds the central part. In contrast, the lead with a high thermal expansion coefficient, P₂O₅-F-based low-melting-point glass surrounds the surrounding structure, so the stress will act on each surface of the GaN-based LED element in the vertical direction, causing the glass to produce compressive stress. In this way, compared with LED components or sub-mounting bases, even if the thermal expansion coefficient of low melting point glass is larger, it can be put into practice.

(7) The heat emitted by the GaN-based LED components will be quickly released to the outside through the AlN sub-mount base and the leads, and the thermal conductivity of the glass is about 10 times better than that of the resin sealing member. The heat released by the glass cannot be ignored The degree.

(8) In addition, hot press processing is performed on the lead frame, and then the lead frame is individually glass sealed, and the lead frame is also cut (Tie Bar Cut), so it can be produced in large quantities at one time and has good mass production.

(9) In addition, the material constituting the secondary loading abutment is not limited to AlN, and sapphire (Al₂O₃). Use Al₂O₃At this time, due to the small difference in thermal expansion coefficient between it and the glass material, the occurrence of chipping and peeling can be controlled.

In addition, as shown in FIG. 24, the n-layer 18B and the p-layer 18C can also be used to mount the GaN-based LED element 2 on the silicon submount base 18 as a Zener Diode. In this case, the GaN can be protected. The LED components are not damaged by static electricity. In addition, since the heat-resistant inorganic material coating 11 and other protective materials described above can be used to protect the wiring that electrically connects the p-layer 18C of the silicon submount base 18 and the lead 19, it is possible to avoid the accompanying glass sealing process And the damage that occurred.

In addition, for the two pieces of glass that clamp the lead, white glass can also be used for the glass below. At this time, it reflects the light radiated to the bottom, and can radiate it to the side where the optical shape is formed.

In addition, the two pieces of glass that clamp the lead can have different viscosities. Specifically, the upper glass uses P₂O₅-F series low melting point (thermal expansion coefficient: 17.3×10^-6/°C, Yield point: 310°C, refractive index: 1.51, internal transmittance: 99% (470nm)), use P below₂O₅-F series low melting point glass (thermal expansion coefficient: 16.9×10^-6/°C, yield point: 363°C, refractive index: 1.54, internal transmittance: 99% (470nm)); at this time, during hot pressing, the upper part has a high viscosity and the lower part has a low viscosity, so it is easier to form.

FIG. 25 is a light-emitting device related to the tenth embodiment, in which (a) is a top view, (b) is a cross-sectional view of part AA in (a), and (c) is a perspective view of the lower glass. The light-emitting device has the following parts: (1) an upward-type GaN-based LED element 2, (2) a lead 19 equipped with a lead cup portion 19B on which the GaN-based LED element 2 is mounted, and (3) a GaN-based LED element and a lead 19 The wire 10 for electrical connection, (4) the GaN-based LED element 2 and the wire 10 are covered with a silicon coating 35 for protection, (5) the lead 19 is connected by the pre-formed upper glass 60A and lower glass 60B P for overall sealing₂O₅-F series glass sealing part 6.

The lead cup portion 19 is formed into a bowl shape due to the inclined surface 190 and the bottom surface 191, and is stored in the lead receiving groove 60C of the lower glass 60B shown in (c), and the lead receiving groove 60C is used to make the lower glass by using a mold It is formed during the preform of 60.

The method of manufacturing the light-emitting device 1 will be described below.

First, prepare a lead frame not shown in the figure. The lead frame is equipped with a pair of leads 19 made of copper and silver-plated on the surface; secondly, the GaN-based LED element 2 is mounted on the lead cup 19B of the lead 19 . The GaN-based LED element 2 is bonded to the bottom 191 of the lead cover cup 19B by an inorganic transparent adhesive. Next, use the wire 10 to electrically connect the pair of leads 19 with the electrodes of the GaN-based LED element 2; then, when there is an electrical connection between the pair of leads 19 and the electrodes of the GaN-based LED element 2, store them in In the lead receiving groove 60C of the preformed lower glass 60B. Next, a silicon resin coating film is poured in so as to cover the pair of leads 19 and the GaN-based LED element 2. Next, the upper glass 60A is prepared, which is integrated with the lower glass 60B by hot pressing, and then the light-emitting device 1 is cut away from the lead frame.

According to the tenth embodiment, the following effects can be obtained.

At temperatures above 400°C, the molecular bonds of the silicone resin are destroyed by heat and produce gas. However, since it can be processed at 360°C where the silicone resin coating 35 will not be thermally decomposed, the silicone resin will absorb glass. The heat during sealing process relieves stress. In addition, when the pre-formed lower glass 60B that accommodates the lead cup 19B is used, the sealing state of the pair of leads 19 will be relatively stable. In addition, the hot pressing process is performed on the lead frame, and the glass is sealed for the respective leads, and the light-emitting device is cut (TIBAR CUT) from the lead frame. Mass production can be carried out at the same time, and the mass production is good.

Fig. 26 is a cross-sectional view of a first modification of the light-emitting device related to the tenth embodiment. The light-emitting device 1 has (1) flip chip GaN-based LED elements 2 (0.3mm×0.3mm), and (2) is equipped with The AlN submount base 18 of the GaN-based LED element 2 (3) has a pair of lead frames 19 that accommodate the step portion 19A of the AlN submount base 18. The above is the difference from the tenth embodiment.

The pair of lead frames 19 have an inclined surface 19D above the step portion 19A, and the light emitted from the GaN-based LED element 2 is reflected by the inclined surface 19D and radiated to the outside.

The AlN submount base 18 has through holes 18A for electrically connecting the circuit patterns 4 provided on the surface and the back surface.

The method of manufacturing the light-emitting device 1 will be described below.

First, prepare a lead frame with a pair of leads 19 not shown in the figure. Second, place the AlN sub-loading base 18 on the step portion 19A of the leads 19, and electrically connect them with silver glue. Next, the GaN-based LED element 2 and the AlN submount base 18 are joined through the gold bump 5. Next, in a state where the pair of leads 19 and the electrodes of the GaN-based LED element 2 are electrically connected, they are stored in the lead receiving groove 60C of the preformed lower glass 60B. Next, a silicon resin coating film is poured in to cover the pair of leads 19 and the GaN-based LED element 2. Next, the upper glass 60A is prepared, which is integrated with the lower glass 60B by hot pressing, and then the light-emitting device 1 is cut away from the lead frame.

With this first modification, when the flip-chip GaN-based LED element 2 is used, light can be efficiently extracted from the substrate.

Fig. 27 is a cross-sectional view of a second modification of the light-emitting device related to the tenth embodiment. The light-emitting device 1 has (1) flip chip GaN-based LED elements (large size) 2 and (2) is equipped with GaN-based The AlN sub-loading base 18 of the LED element 2 (3) has a lead frame 19 that accommodates the step portion 19A of the AlN sub-loader 18. The above is the difference from the tenth embodiment. The size of the large-size GaN-based LED element 2 is 1mm×1mm.

The description of the second modification is based on the use of large-sized crystal grains (Chip), and when the crystal grains become larger, P₂O₅-F series glass AlN secondary loading abutment 18 and P₂O₅-The difference in thermal expansion coefficient of the F-based glass sealing portion 6 will increase; however, even in the above case, good sealing performance can be obtained.

Fig. 28 is a light-emitting device related to the eleventh embodiment, in which (a) is a side view, and (b) is a perspective view of a glass-sealed state. As shown in Figure 28(a), the sealing method of the light-emitting device 1 is₂O₅-The cylindrical body 60D composed of F-based glass is heated, and then the GaN-based LED element 2, the connection 10 and the pair of leads 19 are glass-sealed.

As shown in Figure 28(b), the cylindrical body 60D is composed of a partially cut cylindrical glass. The cylindrical body 60D is heated by a heating device such as a heater (Burner) not shown in the figure to dissolve the glass. Then, the GaN-based LED element 2, the connection line 10, and the pair of leads 19 are glass-sealed.

With this eleventh embodiment, the GaN-based LED element 2, the connection 10, and the pair of leads 19 can be glass-sealed based on the surface tension of the dissolved glass. In addition, in this embodiment, the glass is sealed by the method of allowing molten glass to adhere, but it is also possible to perform hot press processing in a state where the glass is molten.

Fig. 29 is a longitudinal cross-sectional view of a light-emitting device according to the twelfth embodiment. The light-emitting device 1 is provided with a mold part made of epoxy resin on the light-emitting device 1 described in the ninth embodiment.

The mold forming part 9 has a hemispherical optically shaped surface 9A, which is formed by a transfer molding method.

This configuration not only makes it easy to form an optical system on a glass-sealed device, but also because the mold forming portion 9 surrounds the glass-sealed portion 9, the moisture resistance can be improved. In addition, the lead-out portion is not directly exposed from the glass, which has the effect of preventing glass breakage caused by the stress when the lead is bent. In addition, the mold forming part 9 can also be formed using resin materials such as silicone resin in addition to epoxy resin. In addition to the injection molding method, methods such as the mold injection molding method are also applicable. In addition, it is also possible to use resin materials such as acrylic and ethyl carbonate to be formed by an injection method. In this case, productivity can be improved.

Hereinafter, the embodiment shown in FIGS. 30 to 55 will be described in detail.

(Optical element)

Optical elements include light-emitting diodes, laser diodes, and other light-emitting elements and light-receiving elements. The light-receiving wavelength of the optical element is not limited to a specific wavelength, and can also be used for Group III nitrogen compound semiconductor elements that are effective in the range of ultraviolet light to green light, or GaAs-based semiconductor elements that are effective for red light.

The problem of sealing members is particularly prominent in light-emitting devices that emit short-wavelength group III nitride compound semiconductors. Group III nitride compound semiconductors are generally AlxGaYInl-X-YN (0<X1, 0Y1 , 0X+Y1). Among them, there are 2-membered AlN, 3-membered AlxGal-xN and AlxInl-xN (where 0<X<1). In group III nitride compound semiconductors and GaN, at least a part of group III elements can be substituted with boron (B), thallium (Tl), or the like. In addition, part of nitrogen (N) can also be replaced with phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), etc.

In addition, group III nitride compound semiconductors can contain any dopants, and n-type impurities can use silicon (Si), germanium (Ge), selenium (Se), tellurium (Te), carbon (C) Wait. For p-type impurities, magnesium (Mg), zinc (Zn), beryllium (Be), calcium (Ca), strontium (Sr), barium (Ba), etc. can be used. In addition, after the p-type impurity is doped, it is not necessary to heat the group III nitride compound semiconductor by electron beam irradiation, plasma irradiation, boiler or the like.

The group III nitride compound semiconductor layer is formed by the MOCVD (metal organic vapor phase epitaxial growth) method, but it is not necessary to form all the semiconductor layers constituting the device by the MOCVD method, and the molecular wire crystal growth method (MBE method) can also be used together , Hydride vapor phase epitaxy method (HVPE method), sputtering (Sputter) method, ion plating (Ion Plating) method, etc.

The structure of the light-emitting element can use the following structures: a homogeneous structure with MIS bonding, PIN bonding or pn bonding, a hetero structure or a double-hetero structure, etc. The light-emitting layer can adopt a quantum well structure (single quantum well structure or multiple quantum well structure). The light-emitting element of the group III nitride compound semiconductor can use the following two methods: (1) Face UP method: the main light receiving and emitting direction is toward the optical axis of the light device, (2) flip chip method : Turn the main light receiving and emitting direction to the direction opposite to the optical axis direction of the light device, and use the reflected light.

The heat-resistant temperature of Group III nitride-based compound semiconductor devices is 600°C, and the heat-resistant temperature of GaAs-based semiconductor devices is also 600°C. Both are very stable during low melting point glass molding.

(Power receiving organization)

The optical device contains a power transmission mechanism, which is an electrical component that supplies power to the light-emitting element, or takes out the power in the light-receiving element after receiving light; the power transmission mechanism includes (1) the light The lead wire that connects the device with the external wire, (2) the bonding wire that wire the lead wire to the optical element, and the bonding wire is mostly gold wire or gold alloy wire. The heat-resistant temperature of the bonding wire itself and when bonding the bonding wire to the lead or optical element is 600°C or higher, and it is very stable during the molding of low melting point glass.

(1st sealing member)

The first sealing member covers at least a part of the optical element and the power transmission system, and the first sealing member selected in the present invention is: SiO₂-Nb₂O₅Department, B₂O₃-F series, P₂O₅-F series, P₂O₅-ZnO series, SiO₂-B₂O₃-La₂O₃Or SiO₂-B₂O₃Department of glass.

The above-mentioned low-melting glass can be press-formed at 350-600°C, and the first sealing member of the present invention can be formed by natural melting.

It is also possible to disperse a fluorescent material in the first sealing member. The fluorescent material uses inorganic fluorescent powder, which can be mixed in the low melting point glass. In addition, rare earth ions are also doped into low melting point glass to produce fluorescence. After proper combination of light-emitting elements and fluorescent materials, light of any color such as white light can be obtained.

In the combination of the first sealing member and the optical element, the best conditions are as follows: the Abbe Nmuber of the first sealing member is 40 or less, the refractive index is 1.6 or more, and the light-receiving wavelength of the optical element is 546.1nm (Na of e-line wavelength) below. That is, the external quantum efficiency of the light emitted in the high refractive index material is more advantageous when the refractive index of the sealing member for the emission wavelength is higher. The refractive index of optical materials is defined by the d-line of Na, but generally the shorter the wavelength, the higher the refractive index, and the degree of change of the refractive index to the wavelength of light is expressed by the Abbe number. The present invention can not only prevent short-wavelength light-emitting elements that have been problematic in the past when resin sealing, because the choice of Na's d-line has a high refractive index and a large change in the refractive index to the wavelength, resulting in resin change Yellow, reduce the light output; and realize the use of materials with high refractive index for short-wavelength light to seal, and obtain high external quantum efficiency.

The low melting point glass with this optical characteristic can be SiO₂-Nb₂O₅Is glass, in which SiO is used₂-Nb₂O₂-Na₂O glass is better.

The first sealing member is preferably arranged at least in the light-receiving and emitting direction of the light-emitting element, and the form of covering it is preferable because it can surely prevent discoloration in this direction.

The shape of the first sealing member is not particularly limited, and can be appropriately designed for the required optical characteristics of the optical device. The first sealing member arranged in the light emitting direction of the light emitting element is preferably a convex lens type.

(Second sealing member)

The optical element of the present invention may be sealed with various sealing members including the first sealing member described above. In this case, the second sealing member covers the optical element from the main light-receiving direction and the opposite direction.

The second sealing member is also the same as the first sealing member, and its low melting point glass can be made of SiO₂-Nb₂O₅Department, B₂O₃-F series, P₂O₅-F series, P₂O₅-ZnO series, SiO₂-B₂O₃-La₂O₃And SiO₂-B₂O₃System selection; and the second sealing member can be the same or different material from the first sealing member. When the two are of different materials, the refractive index of the first sealing member (existing in the main light-receiving direction of the optical element) is preferably higher than the refractive index of the second sealing member; therefore, when the light-emitting element is used as the optical element At this time, the critical angle of the interface between the light-emitting element and the sealing member becomes larger, which can improve the light efficiency.

Similar to the first sealing member, the second sealing member made of low-melting glass can be formed by a press mold or formed by natural melting.

In addition, like the first sealing member, the fluorescent material can be dispersed in the second sealing member made of low-melting glass.

The second sealing member can also be formed of a non-transparent material. In addition to low-melting glass, the second sealing member can also be a metal plate, a ceramic plate, etc.; in this case, the second sealing member is preferably able to efficiently transmit light Made of reflective materials. When the second sealing member is formed of a material other than low melting point glass, the value of the linear expansion coefficient of the first sealing member is preferably between the linear expansion coefficient of the second sealing member and the linear expansion coefficient of the optical element; Even when the optical device is heat-treated in a reflow furnace, etc., the internal stress of the optical device caused by the different linear expansion coefficients of different materials can be reduced.

Hereinafter, embodiments of the present invention will be described.

(First embodiment)

The optical element of this embodiment uses the face-up type III nitride compound semiconductor light-emitting element 1010 shown in FIG. 30, and this light-emitting element emits blue light.

The specifications of each layer of the light-emitting element 1010 are as follows:

<img file="TWI246780B_D0001.tif" />

The n-type layer 1013 made of GaN doped with n-type impurity silicon (Si) is formed on the substrate 1011 through the buffer layer 1012. At this time, the substrate 1011 uses sapphire, but it is not limited to this. In addition to sapphire, it is also Spinel, silicon carbide, zinc oxide, magnesium oxide, manganese oxide, zirconium boride, group III nitride compound semiconductor single crystals, etc. can be used. Secondly, the buffer layer is formed by the MOCVD method using AlN, but it is not limited to this. GaN, InN, AlGaN, InGaN and AlInGaN can also be used as materials. The methods that can be used include the molecular wire crystal growth method (MBE method), hydride Vapor phase epitaxy method (HVPE method), sputtering method, ion plating method, etc. When a group III nitride compound semiconductor is used as the substrate, the buffer layer can be omitted.

After the semiconductor element is formed, the substrate and the buffer layer can be removed as necessary.

At this time, the n-type layer 1013 is formed of GaN, but AlGaN, InGaN, or AlInGaN can also be used.

In addition, the n-type layer 1013 is doped with n-type impurities-silicon, but Ge, Se, Te, C, etc. can also be doped as n-type impurities.

The layer 1014 including the light-emitting layer may also include a quantum well structure (multiple quantum well structure or single quantum well structure), and the structure of the light-emitting element may be of single-hetero type, double-hetero type, and homogeneous Joining and so on.

The layer 1014 containing the light-emitting layer may contain a group III nitride compound semiconductor layer doped with Mg and the like on the side of the p-type layer 1015 with a wide band gap, because it can effectively prevent being injected into the layer containing the light-emitting layer The electrons in 1014 diffuse into the p-type layer 1015.

A p-type layer is formed on the layer 1014 containing the light-emitting layer. The p-type layer is composed of GaN doped with Mg as a p-type impurity. The p-type layer 1015 may be AlGaN, InGaN or InAlGaN, and the p-type impurity Zn, Be, Ca, Sr, Ba can also be used. After introducing p-type impurities, well-known methods such as electron beam irradiation, boiler heating or plasma irradiation can be used to reduce resistance. In the light-emitting element of the above-mentioned configuration, each group III nitride compound semiconductor can be formed by MOCVD under general conditions, or molecular wire crystal growth method (MBE method), hydride vapor phase epitaxy method (HVPE method), sputtering Sputter method, Ion Plating method, etc.

The n-electrode 1018 is composed of two layers of Al and V. After the p-type layer 1015 is formed, the p-type layer 1015, the layer 1014 containing the light-emitting layer, and the n-type layer are removed by etching and the surface is exposed. The n-type layer 1013 is formed by evaporation.

The light-transmitting electrode 1016 is a thin film containing gold and is laminated on the p-type layer 1015. The p-electrode 1017 is also made of a gold-containing material, and is formed on the translucent electrode 1016 by evaporation. After each layer and each electrode are formed through the above steps, the next step is the cutting step of each chip.

As shown in FIG. 31, the structure of the light-emitting element 1010 is: the light-emitting element is fixed on the Mount Lead 1021 as a power receiving mechanism, and the bonding wires 1023, 1023, 1024 suspension to the secondary lead 1022 of the loading lead 1021 and other power transmission mechanism. In order to efficiently reflect the light emitted from the light-emitting element 1010, the surface of the loading lead 1021 is plated with silver; in addition, to ensure the light reflection efficiency, the light-emitting element 1010 can also be fixed to the loading lead 1021 with an inorganic white adhesive Place. Furthermore, materials with high heat dissipation properties, such as copper alloys close to pure copper, can also be used, and the bonding wires are gold wires.

The assembly 1020 shown in FIG. 30 is taken as the center, and is arranged in the pressing mold 1025 as shown in FIG. 32. First, the low-melting-point glass is respectively arranged in the recesses 1026 and 1027 of the pressing film 1025, and by closing the mold 1025, the sealing member 1028 (first sealing member) shown in FIG. 33 is formed. In this embodiment, the low melting point glass is selected as P₂O₅-F-series glass (Sumita Optical Glass Co., Ltd.: trade name K-PG325) with a forming temperature of 430°C. The result is shown in FIG. 33. All of the light-emitting element 1010 and a part of the leads 1021 and 1022 are covered by a hemispherical sealing member 1028; the shape of the sealing member 1028 can be appropriately adjusted according to the required optical characteristics of the optical device 1022 Design, can also use shell type, etc.

(Second embodiment)

The optical device 1003 shown in FIG. 34 is formed by adding a fluorescent material to a low melting point glass in the optical device 1001 shown in FIG. 33. In addition, the same reference numerals are given to the parts having the same elements as those in FIG. 33, and the description is omitted. The sealing member 1038 in this embodiment is formed of low melting point glass doped with rare earth elements as fluorescent materials.

By adding any fluorescent material into the low melting point glass, the light emitting color of the light device 1003 can be controlled.

(3rd embodiment)

The light device 1004 shown in FIG. 35 is the light device 1002 of FIG. 4 covered with a cannonball-shaped cover (Cover) 1048 to cover the sealing member 1028. The cover 1048 is formed of epoxy resin and other light-transmitting resins. Molding. The cover can be configured to obtain a large-size light device. In this way, a standard-shaped glass sealing body is produced, and then a variety of optical systems can be obtained with mold-type equipment or easier-to-operate resin. At this time, the density of light emitted by the light-emitting element is high, and the temperature of the light-emitting element is surrounded by glass materials, which can reduce the deterioration of the light output to a negligible degree. In addition, the cover 1048 can also be used to cover the sealing member 1038 shown in Fig. 34; in addition, the cover 1048 can also be used to describe the sealing members 1058, 1068, and 1069 shown in Fig. 36, Fig. 38, and Fig. 39 below. And 1079 coating. The cover 1048 may also contain fluorescent materials.

(4th embodiment)

The optical device 1005 shown in FIG. 36 has a sealing member 1058 formed by a natural fusion method, and the same elements as those in FIG. 33 are given the same reference numerals, and the description is omitted.

The sealing member 1058 is formed in the following manner. As shown in Figure 37, first prepare a cylindrical body 1058a made of low-melting glass, and place it on the combination of the light-emitting element 1010 and the leads 1021 and 1022, and then put it in the furnace to soften the cylindrical body.body1058a. As a result, the cylindrical body 1058a covers the combined body 1020 in the manner of a convex lens due to the surface tension of the material.

This embodiment does not require a pressing mold, and can provide an inexpensive optical device.

(Fifth embodiment)

The light device 1006 shown in FIG. 38 uses a dissimilar low melting point glass to cover the light emitting element 1010 and the leads 1021 and 1022. In addition, in FIG. 38, the same elements as those in FIG. 33 are denoted by the same reference numerals, and the description is omitted.

In the example of FIG. 38, the light-emitting element is the same as the above-mentioned embodiment. The blue light-emitting element is used. The upper part of the light-emitting element 1010 (the main light emission direction) is made of₂-Nb₂O₅The first sealing member 6108 (refractive index 1.8, Abbe number 25) made of glass is used for sealing, and the lower part of the light-emitting element 1010 (the direction opposite to the main light emission direction) is₂O₅-The second sealing member 1069 made of F-based glass performs sealing. From the viewpoint of improving the light extraction efficiency, a high refractive index material is selected for the first sealing member 1068; in addition, the manufacturing problems derived from the above method are alleviated by the second sealing member and can be actually manufactured. As a result, the refractive index of the first sealing member 1068 is greater than the refractive index of the second sealing member 1069. In addition, a material with a small Abbe number is selected for the first sealing member 1068, which increases the actual refractive index of the blue light emitting element.

The light device 1006 shown in FIG. 38 can be formed by using different materials for the materials filled in the recesses 1026 and 1027 of the mold 1025 in FIG. 35.

In addition, when using a red color as a light-emitting element, if a material with a high refractive index and a large Abbe number is used as the first sealing member 1068, a material with a large actual refractive index can be selected; for example, refractive index 1.8, Abbe Number 45 SiO₂-B₂O₃-La₂O₃Department of glass.

(6th embodiment)

The optical device 1007 shown in FIG. 39 uses a thin metal plate as the second sealing member 1079. The parts with the same elements as those in Fig. 38 are given the same reference numerals, and the description is omitted. When a metal material is used as the second sealing member, the light emitted by the light-emitting element 1010 can be efficiently reflected. The second sealing member 1079 is used exclusively for the purpose of its reflection plate, and in addition to a thin metal plate, other resin plates may also be used.

The manufacturing method of the light-emitting device 1007 is as follows: as shown in FIG. 40, a thin metal plate 1079 is attached to the back of the combination 1020 of the light-emitting element 1010 and the leads 1021 and 1022, and a mold 1025 is set as the center; at this time, the melting point is low The glass is only filled in the recess 1026 above the pressing mold 1025, and then the mold is closed to obtain the light-emitting device 1007 in FIG. 39.

As in this embodiment, when the first sealing member 1068 and the second sealing member 1079 are formed of different materials, the linear expansion coefficient of the first sealing member is preferably between the linear expansion coefficient of the second sealing member and the line of the light-emitting element The middle of the expansion coefficient is better.

(7th embodiment)

In this embodiment, a flip-chip light-emitting element 1100 is used. As shown in FIG. 41, the structure of the flip-chip light-emitting element is: in the light-emitting element of FIG. A thick film p-electrode is laminated on the entire surface of the layer 1015. In addition, the same elements as those in FIG. 30 are given the same reference numerals, and the description is omitted.

The flip-chip light emitting element 1100 is loaded to the loading lead 1021 through the sub-loading base 1110, and the sub-loading base 1110 and the sub-lead 1022 are connected by bonding wires 1124 to form an assembly 1120. A circuit pattern is formed on the sub-mounting base 1110, and the electrodes 1018 and 1101 of the light-emitting element 1100 are electrically connected to the leads 1021 and 1022 directly or through bonding wires 1124. With the combined body 1120 as the center, as in the first embodiment, a sealing material 1028 is formed, and finally an optical device 1008 as shown in FIG. 42 is obtained. In the light-emitting device with flip-chip light-emitting element, there is only one very thin bonding wire in the sealing step, so the step management is very easy, and the manufacturing yield can be improved. In addition, the bonding wire is not close to the light-emitting surface of the light-emitting element, so it does not affect the external radiation efficiency.

In addition, the same elements as those in the first embodiment are given the same reference numerals, and the description is simplified.

The assembly 1120 of the flip-chip light-emitting element 1100 shown in FIG. 41 is also applicable to the sealing members described in the second to sixth embodiments, as described in FIGS. 42 to 45. In addition, since the description is simplified, the same reference numerals are used for the parts that are the same as the previously described elements, and the description is omitted.

(Embodiment 8)

In this embodiment, as shown in FIG. 47, circuit patterns 1201 and 1202 serving as power transmission mechanisms are formed on the surface of an inorganic material substrate 1200 made of AlN or the like. The flip-chip light emitting element 1100 is mounted on the circuit patterns 1201 and 1202 through the bumps 1205 and 1206. In addition, the substrate 1200 is mounted to the leads 1021 and 1022 by the eutectic material. As in the first embodiment, a sealing member 1028 is formed at the center of the assembly 1220, and then an optical device 1009 as shown in FIG. 48 is obtained.

In addition, the same elements as those in the first embodiment are given the same reference numerals, and the description is simplified.

The combination 1220 shown in FIG. 47 is also applicable to the sealing members described in the second to sixth embodiments, as shown in FIGS. 49-51. In addition, since the description is simplified, the same reference numerals are used for the parts that are the same as the previously described elements, and the description is omitted.

In the above example, the entire assembly 1220 is covered with a sealing member. However, as shown in FIG. 52, a part of the light-emitting element 1100 and the circuit patterns 1201 and 1202 can also be covered with the sealing member 1228. The light device with the configuration shown in Figure 53 can be used as a die-type LED.

The optical device of this embodiment does not have bonding wires that are thermally and mechanically weak, and the device does not contain organic materials, so it can be pressed at high temperatures to form a low melting point glass. In addition, it is also very stable for heat treatment such as reflow furnaces. Therefore, it is relatively easy to manufacture, and there are more choices of suitable low-melting glass, which can provide an inexpensive optical device.

Not limited to the above eutectic materials, gold bumps can also be used to mount optical components, thereby forming a wireless, stable device with only inorganic materials.

(Ninth embodiment)

The cross-sectional view of the optical device of this embodiment is shown in FIG. 54 and the top view is shown in FIG. 55.

The light-emitting device 1230 includes a flip-chip light-emitting element 1100, an AlN substrate 1231, a metal pattern 1236, and a sealing member 1238.

In this embodiment, the substrate 1231 is made of AlN, but at least the mounting surface of the light-emitting element 1100 is made of AlN and other insulating materials. For example, an aluminum plate is used to form the base of the substrate, and the surface is laminated with AlN; In addition, the insulating material can use Al₂O₃Wait.

Through holes 1231 and 1232 are formed on the substrate 1231.

Almost the entire surface of the mounting surface of the substrate 1231 is covered by the metal patterns 1235 and 1236. In this embodiment, the metal patterns 1235 and 1236 are formed by the metallization method. Therefore, the bonding force between the metal patterns 1235 and 1236 and the substrate 1231 is strong, and the contact area with the substrate 1231 becomes larger, which can improve the bonding force between the two. In the embodiment, the metal patterns 1235 and 1236 are nickel-plated on tungsten (W), and gold-plated on the light-emitting element mounting part and the exposed part of the metal pattern (not sealed by low-melting glass). The metal material can be strongly combined with the insulating material of the substrate mounting surface and the sealing member made of low melting point glass. In addition, the thermal expansion coefficients of glass and metal materials are slightly the same (approximately 10~20×10^-6(1/°C)), it is not easy to generate heat shrinkage stress; in addition, the shape and forming material of the metal pattern can be appropriately selected according to the material of the substrate mounting surface and the sealing member.

The metal patterns 1235 and 1236 are mechanisms for transmitting power to the light-emitting element 1100. In addition, forming a metal pattern separate from the power transmitting mechanism can ensure the bonding force between the substrate and the sealing member.

The electrode surface (the lower side of the figure) of the flip-chip light-emitting element 1100 is plated with its crystal material; the light-emitting element 1100 is soldered on the metal patterns 1235 and 1236 after passing through a general reflow furnace.

Here, the electrode surface of the light-emitting element 1100 is widely but thinly plated with eutectic material, so it has excellent performance of conducting heat to the substrate side. In addition, like flip-chip light-emitting devices, even if the gap between the p-electrode and the n-electrode is very narrow, there is no short circuit.

The sealing member 1238 is made of low-melting-point glass that is transparent to the wavelength of the light-emitting element 1100, and the low-melting-point glass can be selected from the following low-melting-point glasses: SiO₂-Nb₂O₅Department, B₂O₃-F series, P₂O₅-F series, P₂O₅-ZnO series, SiO₂-B₂O₃-La₂O₃Or SiO₂-B₂O₃Tie.

The sealing member 1238 is molded in a mold under reduced pressure nitrogen.

With the optical device 1230, the adhesion between the low-melting glass forming the sealing member 1238 and the metal forming the metal patterns 1235 and 1236 is improved, and a high degree of adhesion between the metal and the AlN substrate 1231 can be ensured. Therefore, the sealing member 1238 can be firmly bonded to the substrate 1231, and the interface peeling hardly occurs. In addition, this optical device does not have bonding wires that are fragile to heat and machinery, and the device does not contain organic materials, so it can be pressed at high temperatures to form a low melting point glass. In addition, it is also very stable for heat treatment such as reflow furnaces. Therefore, it is relatively easy to manufacture, and there are more choices of suitable low-melting glass.

The embodiment shown in Figs. 56 to 64 will be described in detail below.

(Optical element)

Optical elements include light-emitting diodes, laser diodes, and other light-emitting elements and light-receiving elements. The light-receiving wavelength of the optical element is not limited to a specific wavelength, and a Group III nitrogen compound semiconductor element that is effective for ultraviolet light to green light, or a GaAs-based semiconductor element that is effective for red light can also be used. In addition, optical elements formed of SiC, AlInGaP, etc. can also be used.

The problem of sealing members is particularly prominent in light-emitting devices that emit short-wavelength group III nitride-based compound semiconductors. Group III nitride compound semiconductors are generally represented by AlxGayInl-X-yN (0&lt;X1, 0Y1, 0X+Y1). Among them, there are 2-membered AlN, 3-membered AlxGal-xN and AlxInl-xN (where 0&lt;X&lt;1). In group III nitride compound semiconductors and GaN, at least part of group III elements can be replaced with boron (B), thallium (Tl), and the like. In addition, part of nitrogen (N) can also be replaced with phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), etc.

In addition, group III nitride compound semiconductors can contain any dopants, and n-type impurities can be silicon (Si), germanium (Ge), selenium (Se), tellurium (Te), carbon (C), etc. For p-type impurities, magnesium (Mg), zinc (Zn), beryllium (Be), calcium (Ca), strontium (Sr), barium (Ba), etc. can be used. In addition, after the p-type impurity is doped, it is not necessary to heat the group III nitride compound semiconductor by electron beam irradiation, plasma irradiation, boiler or the like.

The group III nitride compound semiconductor layer is formed by the MOCVD (metal organic vapor phase epitaxial growth) method, but it is not necessary to form all the semiconductor layers constituting the device by the MOCVD method, and the molecular wire crystal growth method (MBE method) can also be used together , Hydride vapor phase epitaxy method (HVPE method), sputtering (Sputter) method, ion plating (Ion Plating) method, etc.

The structure of the light-emitting element can use the following structures: a homogeneous structure with MIS bonding, PIN bonding or pn bonding, a hetero structure or a double-hetero structure, etc. The light-emitting layer can adopt a quantum well structure (single quantum well structure or multiple quantum well structure). The light-emitting element of the group III nitride compound semiconductor can use the following two methods: (1) Face UP method: the main light receiving and emitting direction is toward the optical axis of the light device, (2) flip chip method : Turn the main light receiving and emitting direction to the direction opposite to the optical axis direction of the light device, and use the reflected light.

The epitaxy (EPI) growth temperature of Group III nitride-based compound semiconductor devices is about 1050°C, while the heat-resistant temperature of the EPI growth temperature of GaAs-based semiconductor devices is above 600°C. Both are due to the use of low melting point glass. It can realize a processing that is not adversely affected by heat.

(Inorganic material substrate)

The optical element in the foregoing description of the optical device of the present invention is mounted on an inorganic material substrate, and the base material and shape of the inorganic material substrate can be appropriately selected according to the use of the optical device, and AlN, Al can also be used.₂O₃, Al containing glass₂O₃Equal rectangular plate material.

It is sufficient that at least the surface of the substrate is formed of the above-mentioned base material. For example, a substrate formed with Al or an Al alloy in the center part and surrounded by AlN on the surface can be used.

(Metal pattern)

A metal pattern is formed on the inorganic material substrate to electrically combine the electrodes of the optical element with the external circuit to transmit and receive power to the optical element; that is, when the optical element is a light-emitting element, the external circuit applies to the optical element Electricity, and when the optical element is a light-receiving element, the electric power generated by the optical element is sent to an external circuit.

The metal pattern of the present invention has the function of an adhesive layer for stably bonding the inorganic sealing member to the inorganic material substrate in addition to the power transmission function described above. The sealing member is arranged to enclose the optical element, and the metal pattern also encloses the optical element in an area, so the area of the metal pattern between the sealing member and the inorganic material substrate can be maximized. In addition, the metal pattern surrounding the optical element is not limited to a continuous body, and may also be a discontinuous body. It is not necessary that all parts of the metal pattern of the discontinuous body have the power transmission function.

The metal pattern has the function of reflecting light, so as to surround the optical element, which can reflect without losing the light of the optical element, and improve the light extraction efficiency. For example, a substrate made of black AlN absorbs the light emitted by the optical element, while the AlN substrate₂O₃The formed substrate will allow the light emitted by the optical element to pass through. Therefore, the metal pattern enclosing the optical element can allow the light emitted by the optical element to be efficiently reflected to the outside.

The material for forming the metal pattern can be appropriately selected according to the material of the sealing member and the material of the inorganic material substrate, and the material with good combination with these can be appropriately selected, and the metal material can also be a multilayer structure of these. For example, the following materials can be used as the material for forming the metal pattern: W, W\Ni (laminating NI on W), W\Ni\Ag (laminating NI and Ag sequentially on W), copper foil, etc.

At this time, the W layer enters the inorganic material of the sealing member or the substrate in a wedge shape due to heating, and then forms a strong bond between the two. When the NI layer is formed on the W layer, a chemical bond occurs between the NI layer and the sealing member due to heating, so that the two obtain a strong bond.

The Ag layer is a high-reflectivity layer that improves the light reflection efficiency of the metal pattern. It is better to be partially formed on the periphery of the optical element; in addition, the part where the optical element is mounted can be formed with an Au layer as a bonding mechanism. The optical element is bonded to the metal pattern.

Gold bumps can be used as the bonding mechanism, and in addition to the gold bumps, solder bumps or solder-plated eutectic materials can also be used as the loading and bonding mechanism.

From the viewpoint of reducing the amount of thermal deformation of the substrate, the metal pattern is preferably formed on the substantially entire surface (surface) of the optical element mounting surface of the substrate.

When a metal pattern is also formed on the back of the substrate, if a through hole is formed on the substrate and the material of the metal pattern is passed through the through hole, the surface of the substrate and the pattern and the pattern on the back of the substrate can be connected. Since the electrical terminal is pulled out from the surface where the optical element is mounted to the back, there is no need to mount the optical element on the surface of the substrate. For the electrical terminal, a place not covered by the sealing member of the optical element is specially provided, so mass production Good sex. At this time, if the substrate does not have a through hole, the sealing member of the optical element on the surface where the optical element is mounted will not be pulled out to the back surface.

The method of forming the metal pattern is not specifically limited. In the embodiment, the screen printing of tungsten glue is performed on the inorganic material substrate, followed by grilling, and the metal pattern of W is formed on the inorganic material substrate. Secondly, gold is plated on the W layer to form a metal pattern composed of W\Ni, and then heated; W\Ni\Ag is then silver plated on the gold-plated Ni layer.

The above-mentioned metal layer is formed by sputtering or other well-known methods.

(Sealing member)

Inorganic sealing members are transparent to the wavelength of light received and emitted by optical elements. Although there are no special restrictions as long as they are used to protect optical elements, considering that the heat-resistant temperature of optical elements is 600°C, it is best to use A low melting point glass with a low melting point (softening point) is preferable.

In addition to lead glass or Chalcogen compound glass, the low melting point glass can also use SiO₂-Nb₂O₅Department, B₂O₃-F series, P₂O₅-F series, P₂O₅-ZnO series, SiO₂-B₂O₃-La₂O₃Or SiO₂-B₂O₃Tie. The above-mentioned low-melting glass can be hot-pressed at 350~600°C.

The fluorescent material can also be dispersed in the sealing member. The fluorescent material uses inorganic fluorescent powder, which can be mixed in the low melting point glass. In addition, rare earth ions can also be doped into low melting point glass to produce fluorescence. After proper combination of light-emitting elements and fluorescent materials, light of any color such as white light can be obtained.

In the combination of the sealing member and the optical element, it is preferable that the Abbe number of the sealing member is below 40, the refractive index is above 1.6, and the light-receiving wavelength of the optical component is below 546.1nm (the wavelength of the e-line of Na); That is, in terms of the external quantum efficiency of the light emitted in the high refractive material, the higher the refractive index of the sealing material relative to the emission wavelength, the better. The refractive index of an optical material is defined by the d-line of Na. Generally, the shorter the wavelength, the higher the refractive index, and the degree of change of the refractive index relative to the wavelength of light is expressed by the Abbe number. In particular, in addition to preventing short-wavelength light-emitting elements that have previously been a problem when resin sealing, the present invention has selected materials with a high refractive index in the d-line of Na and a large change in refractive index with respect to the wavelength, so that the resin becomes In addition to the problem of yellow, resulting in a decrease in light output, it is also possible to achieve sealing with a material with a high refractive index relative to a short wavelength to obtain a higher external quantum efficiency.

The low melting point glass with this optical characteristic can be SiO₂-Nb₂O₅Is glass, in which SiO is used₂-Nb₂O₅-Na₂O glass is better.

The sealing member of plate-shaped low-melting glass is superimposed on the optical element, and it is heated to soften it, and then the light-emitting element can be surrounded by the sealing member. In order to prevent air from being mixed between the sealing member and the optical element, the heating is preferably performed under a reduced pressure environment. With this heating, a chemical reaction occurs between the interface between the low melting point glass and the metal pattern, so that the two can be bonded firmly.

The following examples illustrate the present invention.

(10th embodiment)

The optical element of this embodiment uses the flip-chip type III nitride compound semiconductor light-emitting element 2010 shown in FIG. 56, and this light-emitting element emits blue light.

The visual frame of each layer of the light-emitting element 2010 is as follows:

<img file="TWI246780B_D0002.tif" />

An n-type layer 2013 made of GaN doped with n-type impurity silicon (Si) is formed on the substrate 2011 through the buffer layer 2012. At this time, the substrate 2011 uses sapphire, but it is not limited to this. Sapphire, spinel, silicon carbide, zinc oxide, magnesium oxide, manganese oxide, zirconium boride, and group III nitride compounds can be used. Semiconductor single crystals, etc. Secondly, the buffer layer is formed by the MOCVD method using AlN, but it is not limited to this. GaN, InN, AlGaN, InGaN and AlInGaN can also be used as materials. Methods include molecular wire crystal growth (MBE method) and hydride vapor phase. Epitaxy method (HVPE method), sputtering (Sputter) method, ion plating (Ion Plating) method, etc. When a group III nitride compound semiconductor is used as the substrate, the buffer layer can be omitted.

Next, after the semiconductor element is formed, the substrate and the buffer layer can be removed as necessary.

At this time, the n-type layer 2013 is formed of GaN, but AlGaN, InGaN, or AlInGaN can also be used.

In addition, the n-type layer 2013 is doped with n-type impurities-silicon, but Ge, Se, Te, C, etc. can also be doped as n-type impurities.

The layer 2014 including the light-emitting layer can also include a quantum well structure (multiple quantum well structure or single quantum well structure), and the structure of the light-emitting element can be single-hetero type, double-hetero type, and homogeneous Joining and so on.

The part of the layer 2014 that includes the light-emitting layer, the p-type layer 2015 side may include a group III nitride compound semiconductor layer doped with Mg or the like with a wider band gap.

A p-type layer 2015 is formed on the layer 2014 including the light-emitting layer. The p-type layer 2015 is composed of GaN doped with Mg as a p-type impurity. The p-type layer 2015 may be AlGaN, InGaN or InAlGaN, and p Type impurity can also use Zn, Be, Ca, Sr, Ba. After introducing p-type impurities, well-known methods such as electron beam irradiation, boiler heating, plasma irradiation, etc. can be used to reduce electrical resistance. In the light-emitting element of the above-mentioned configuration, each group III nitride compound semiconductor can be formed by MOCVD under general conditions, and can also be formed by molecular wire crystal growth method (MBE method), hydride vapor phase epitaxy method (HVPE method), and sputtering. Sputter method, Ion Plating method, etc.

The n-electrode 2018 is composed of two layers of Al and V. After the p-type layer 2015 is formed, parts of the p-type layer 2015, the layer 2014 including the light-emitting layer, and the n-type layer 2013 are removed by etching and then exposed to the surface The n-type layer 2013 is formed by steaming. The p electrode 2016 is laminated on the p-type layer 2015 by evaporation. After each layer and each electrode are formed through the above steps, the next step is the cutting step of each chip.

Next, an inorganic material substrate on which the light-emitting element 2010 is mounted is prepared.

Screen printing containing tungsten paste is performed on both sides of the inorganic material substrate 2021 made of AlN before grilling, and the patterns 2023 and 2024 are shown in FIG. 57. As shown in FIG. 57(b), a through hole 2025 is formed on the substrate 2021, and the pattern 2023 on the loading surface (surface) is electrically connected to the pattern 2024 on the back through the through hole 2025. Then, the AlN is grilled at a temperature exceeding 1500° C., and the tungsten paste is burned onto the substrate 2021, whereby W and the substrate can be strongly combined. This W can also be formed by a sputtering method, and in addition to W, a high melting point metal such as Mo can also be used.

Secondly, the Ni layer on the W pattern 2023 on the surface of the substrate 2021 is heated at 700° C. by electroplating to cause Ni and W to react. Thereby, the metal patterns on the AlN substrate 2021 will be strongly bonded. Secondly, as shown in FIG. 58, the light-emitting element 2010 will be mounted in a predetermined position by the gold bumps 2027 and 2028; the bump 2027 will be connected to the n-electrode 2018 of the light-emitting element 2010, and the bump 2028 will be connected to the light-emitting element. 2010 p-electrode 2016 connection. The light emitting element 2010 is surrounded by the metal pattern 2023 in the state shown in FIG. 58(a).

Next, as shown in FIG. 59, a plate-shaped low-melting-point glass composed of a sealing member is superimposed on the surface of the substrate 2021, and then heated and melted in a reduced pressure environment to seal the light-emitting element. Thereby, the Ni on the metal surface will pass through the oxide on the Ni surface to form a chemically strong bond with the low melting point glass 2029, and the occurrence of residual bubbles during sealing can be prevented.

In addition, when the flip-chip type is used as a light-emitting element, since the bonding wire can be omitted, the mechanical properties are very stable, making the optical device of this structure suitable for mass production steps. Finally, the substrate 2021 is divided at the dividing line D, and then the optical device of the embodiment is obtained.

(11th embodiment)

Fig. 60 to Fig. 63 show optical devices of other embodiments.

Fig. 60 is a top view of the optical device. The pattern of the substrate surface (loading surface) of the optical device is divided into a first part (ring part) 2103, and a second part (bonding part) 2104, 2105; formed on the first part 2103 There are a plurality of holes 2107, and a conductive portion 2108 extending around the substrate is formed for the purpose of applying electric power during electroplating.

In the same manner as in the tenth embodiment, the first part 2103 is a laminate of the W layer and the Ni layer, and then an inorganic sealing member is pasted on it; at this time, the substrate 2110, the first part 2103 and the sealing member 2140 There will be a strong bond. The second portions 2104 and 2105 formed by electroplating and made of Cu penetrate the first substrate 2111.

The basic material of the substrate 2110 of this embodiment is Al₂O₃, Is formed by bonding the first substrate 2111 and the second substrate 2112 together. The basic material of each substrate can use AlN, Al containing glass component₂O₃Other inorganic materials, and the base material of the first substrate 2111 and the base material of the substrate 2112 may be different.

A through hole 2107 is formed in the base material of the first substrate 2111, and a metal layer as the first portion 2103 of the metal pattern is also laminated around the hole 2107.

The surface of the second substrate 2112 is formed with metal patterns 2120, 2121, 2122 as shown in FIG. 62; the circular metal pattern 2120 with cut corners and the holes of the first substrate 2111 are in opposite directions; the metal pattern 2120 and the first metal The first part 2103 of the pattern is the same, and is composed of a laminate of the W layer and the Ni layer. The metal pattern 2120 constructed in the above manner can make it have a sufficient bonding force with the inorganic material (low melting point glass, etc.) of the sealing member deep into the bottom of the cavity 2107.

The metal patterns 2121 and 2122 formed in the center of the second substrate 2112 are respectively formed at positions relative to the second portions 2104 and 2105 of the metal patterns in the center of the first substrate 2111. When the first substrate 2111 and the second substrate 2112 are bonded together, the metal patterns 2121 and 2122 are electrically connected to the second portions 2104 and 2105, respectively. The metal patterns 2121 and 2122 are obtained by laminating Au on the laminate of the W layer and the Ni layer. When the Au layer is provided, the bonding between the metal patterns 2121 and 2122 and the second portions 2104 and 2105 will be improved.

Through holes 2125 and 2126 are formed on the second substrate 2112, and large-area metal patterns 2131 and 2132 are formed on the back of the second substrate 2112. The metal pattern 2121 on the surface of the second substrate 2112 is electrically connected between the conductive metal material filled in the through hole 2125 and the metal pattern 2131 on the back. In this way, electric power is transmitted through the metal pattern 2104 on the surface of the first substrate 2111 from the metal pattern 2131 to one of the electrodes of the device 2010. Similarly, the metal pattern 2122 on the surface of the second substrate 2112 is electrically connected between the conductive metal material filled in the through hole 2126 and the metal pattern 2132 on the back. In this way, power is transmitted through the metal pattern 2105 on the surface of the first substrate 2111 from the metal pattern 2132 to the other electrode of the device 2010.

Conductive portions 2135 and 2136 are respectively formed on the metal patterns 2131 and 2132 formed on the back surface of the second substrate 2112. The conductive portions 2135 and 2136 are used when the metal patterns 2131 and 2132 are formed by electroplating.

The metal patterns 2131 and 2132 on the back of the second substrate 2112 are obtained by laminating Au on the laminate of the W layer and the Ni layer. When the Au layer is provided, the bonding between the metal patterns 2131 and 2132 and the external electrodes will be improved. The metal material in the through holes 2125 and 2126 is formed at the same time when the metal patterns 2131 and 2132 and the metal patterns 2121 and 2122 on the surface are formed.

In this embodiment, the first substrate 2111 and the second substrate 2112 are prepared separately, and the two are combined to form an inorganic material substrate 2110; the method of combining the first substrate 2111 and the second substrate 2112 is not limited, and an adhesive can also be used .

When the substrate 2110 is divided, a metal pattern can be formed on the dividing surface to increase the freedom of circuit design; in addition, the hole 2107 penetrates the substrate 2110, and the material state of the sealing member may make it adhere to the lower mold of the support substrate 2110, resulting in failure to release the film. The best situation. If like this embodiment, when the cavity 2107 has a bottom layer, the contact between the sealing member material and the lower mold can be precautionary. In addition, when the hole 2107 is through, it is not easy to distribute the negative pressure for the purpose of extracting the air between the sealing member and the substrate surface to the entire substrate; in addition, when the hole 2107 has a bottom layer, even if the air between the sealing member and the substrate remains, the air It will enter the hole to prevent the generation of air bubbles between the sealing member and the substrate. When the second substrate 2112 is used to block one of the openings of the through holes formed in the first substrate 2111 to form the bottom hole 2107, compared with the case where the bottom hole is penetrated on a plate-shaped substrate, the former The mass production is better.

The sealing member 2140 made of inorganic light-transmitting material is covered by the surface of the substrate 2110. The material of the sealing member 2140 not only has a strong bond with the surface metal pattern 2103 of the substrate 2110. In this embodiment, the material of the sealing material 2140 is Into the hole 2107, the material of the sealing member 2140 and the substrate 2110 are physically bonded; thereby, even if there is a great difference in thermal expansion coefficient between the sealing member 2140 and the substrate 2110, the deformation of the two can still be physically restrained Therefore, the sealing member 2140 can be surely prevented from peeling off the substrate 2110.

In this way, the uneven structure is provided on the surface of the substrate covered with the sealing member, so that the sealing member and the substrate can be physically bonded, and the sealing member can be surely prevented from peeling off the substrate. In addition to the holes with the bottom layer of the present embodiment, the concave-convex can also use grooves or through holes; furthermore, when the substrate surface is roughened (Ra=0.5um), the two can be physically combined.

When the surface of the base material of the substrate is roughened, even if a metal pattern is formed on it, the roughness is reflected on the surface of the metal pattern. In addition, only when holes are provided in the metal pattern 2103, for example, when the metal pattern 2103 is formed into a grid shape, the above-mentioned uneven structure may also be formed. The concave-convex structure is also effective in the case of covering the base material of the inorganic material substrate with a sealing member formed of an inorganic light-transmitting material without penetrating the metal pattern.

The example of Fig. 64 is the case where the substrate of the optical element of the tenth embodiment is provided with holes 2257 of the bottom layer. As shown in Fig. 64 and Fig. 60, the holes, that is, the unevenness, are preferably evenly distributed on the substrate surface. Ensure the bonding between the sealing material and the uneven structure on the entire substrate to prevent the two from peeling off.

Hereinafter, the embodiment shown in FIGS. 65 to 74 will be described in detail.

(Optical element)

Optical elements include light-emitting diodes, laser diodes, and other light-emitting elements and light-receiving elements. The light-receiving wavelength of the optical element is not limited to a specific wavelength, and can also be used for Group III nitride-based compound semiconductor devices that are effective in the range of ultraviolet light to green light, or GaAs-based semiconductor devices that are effective in red light. In addition, optical elements formed of SiC, AlInGaP, etc. can also be used.

The problem of sealing members is particularly prominent in light-emitting devices that emit short-wavelength group III nitride-based compound semiconductors. Group III nitride compound semiconductors are generally represented by AlXGaYIn1-X-YN (0&lt;X1, 0Y1, 0X+Y1). Among them, there are 2-membered AlN, 3-membered AlxGa1-xN and AlxIn1-xN (where 0&lt;X&lt;1). In group III nitride compound semiconductors and GaN, at least a part of group III elements can be substituted with boron (B), thallium (Tl), or the like. In addition, part of nitrogen (N) can also be replaced with phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), etc.

In addition, group III nitride compound semiconductors can contain any dopants, and n-type impurities can use silicon (Si), germanium (Ge), selenium (Se), tellurium (Te), carbon (C) Wait. For p-type impurities, magnesium (Mg), zinc (Zn), beryllium (Be), calcium (Ca), strontium (Sr), barium (Ba), etc. can be used. In addition, after the p-type impurity is doped, it is not necessary to heat the group III nitride compound semiconductor by electron beam irradiation, plasma irradiation, boiler or the like.

The group III nitride compound semiconductor layer is formed by the MOCVD (metal organic vapor phase epitaxial growth) method, but it is not necessary to form all the semiconductor layers constituting the device by the MOCVD method, and the molecular wire crystal growth method (MBE method) can also be used together , Hydride vapor phase epitaxy method (HVPE method), sputtering (Sputter) method, ion plating (Ion Plating) method, etc.

The structure of the light-emitting element can use the following structures: a homogeneous structure with MIS bonding, PIN bonding or pn bonding, a hetero structure or a double-hetero structure, etc. The light-emitting layer can adopt a quantum well structure (single quantum well structure or multiple quantum well structure). The light-emitting element of the group III nitride compound semiconductor can use the following two methods: (1) Face UP method: turn the main light receiving and emitting direction (electrode direction) toward the optical axis of the light device, (2) ) Flip-chip method: Turn the main light receiving and emitting direction to the direction opposite to the optical axis direction of the light device, using reflected light.

The epitaxial growth temperature of Group III nitride compound semiconductor devices is about 1050°C, and the heat resistance temperature of the epitaxial growth temperature of GaAs semiconductor devices is 600°C or higher. Both of them can be free from heat due to the use of low melting point peeling. Processing under the condition of adverse effects.

(Inorganic material substrate)

The optical element in the foregoing description of the optical device of the present invention is mounted on an inorganic material substrate, and the base material and shape of the inorganic material substrate can be appropriately selected according to the use of the optical device, and AlN, Al can also be used.₂O₃, Al containing glass₂O₃Equal rectangular plate material.

It is sufficient that at least the surface of the substrate is formed of the above-mentioned base material. For example, a substrate formed with Al or an Al alloy in the center part and surrounded by AlN on the surface can be used.

(Metal pattern)

The first metal pattern and the second metal pattern are formed on the inorganic material substrate. The first metal pattern is to electrically combine the electrodes of the optical element with the external circuit to transmit power to the optical element; that is, when the optical element is a light-emitting element, the external circuit will apply power to the optical element, and the optical element When it is a light-receiving element, the power generated by the optical electronics is taken out to an external circuit.

The second metal pattern has the function of stably adhering the inorganic sealing member to the adhesive layer on the inorganic material board; the sealing member is arranged in a form surrounding the optical element. When the second metal pattern is also loaded with optical When the element is arranged in a form surrounded by the first metal pattern, the area of the second metal material between the sealing member and the inorganic material substrate can be maximized, and the second metal pattern is not limited to a continuous body, but may also be a discontinuous body .

The first metal pattern and the second metal pattern may be in a continuous form. If the first metal pattern and the second metal pattern are insulated, electric field plating can be performed on the materials with the most appropriate functions by independently applying voltage.

The metal layer has the function of reflecting light. When the optical element is surrounded by the first metal pattern and the second metal pattern, it can reflect without missing the light of the optical element and improve the light extraction efficiency. For example, a substrate made of black AlN absorbs the light emitted by the optical element, while the AlN substrate₂O₃The formed substrate will allow the light emitted by the optical element to pass through. Therefore, the metal pattern enclosing the optical element can allow the light emitted by the optical element to be efficiently reflected to the outside.

In order to improve the efficiency of light reflection, the surface of the first metal pattern formed as close as possible to the optical element is preferably a metal layer with high reflectivity such as Ag.

Regarding the forming material of the first metal pattern, the surface layer must be compatible with the bonding material that combines the pattern with the optical element. For example, when gold bumps are used as the bonding material, the surface layer of the first metal pattern is formed of Au or Ag. ; From the standpoint of improving the productivity of layers other than the surface layer, it is better to form with a material common to the second metal pattern.

In addition to the above-mentioned gold bumps, the bonding material for bonding the optical element and the substrate can also use eutectic materials such as solder bumps or solder plating.

The Ag layer has high light reflectivity, and it is better to form part of the periphery of the optical element.

The material for forming the second metal pattern can be appropriately selected according to the material of the sealing member and the material of the inorganic material substrate, and the material with good combination with these can be appropriately selected, and the metal material can also be a multilayer structure of these. For example, the following materials can be used as the material for forming the metal pattern: W, W\Ni (Laminating Ni on W), W\Ni\Ag (Laminating Ni and Ag sequentially on W), copper foil (and containing glass Al₂O₃The bonding strength is obtained through oxide between the substrates. The thermal expansion coefficient of the substrate is close to 13×10^-6(1/°C) inorganic sealing components) and so on.

At this time, the W layer enters the inorganic material of the sealing member or the substrate in a wedge shape due to heating, and then forms a strong bond between the two. When the Ni layer is formed on the W layer, the Ni layer and the sealing member are chemically bonded due to heating, so that the two obtain a strong bond.

The surface of the second metal pattern is preferably a material that has a good bond with the sealing member in a softened state, and the material may be Ni, Cr, Ti, Cu, or an alloy of these metals.

The second metal pattern that joins the surface of the substrate and the sealing member is preferably formed on the surface of the substrate as large as possible.

Regarding the forming material of the second metal pattern occupying a large area on the surface of the substrate, the thermal expansion coefficient is preferably between the thermal expansion coefficient of the sealing member (thermal expansion coefficient: small) and the inorganic material board (thermal expansion coefficient: large). Thereby, the thermal expansion coefficient difference between the sealing member and the inorganic material substrate can be alleviated; when the sealing member is used to cool the optical element from the high temperature state when the optical element is coated to room temperature, the sealing member and the inorganic material substrate will shrink according to their respective thermal expansion coefficients. When the thermal expansion coefficient difference between the two is too large, the substrate may be deformed, or the sealing member may be peeled from the substrate. When there is a second metal pattern with a thermal expansion coefficient in the middle of the thermal expansion coefficient between the two, the stress caused by the difference in the thermal expansion coefficient between the two can be alleviated.

When the sealing member is low melting point glass and the substrate is AlN, the thermal expansion coefficients of the two are respectively, low melting point glass: 17.3×10^-6/°C, AlN: 4.5×10^-6/°C. At this time, the thermal expansion coefficient of Ni is 12.8×10^-6/°C, between the two, it is very suitable as the metal pattern forming material.

From the viewpoint of reducing the amount of thermal deformation of the substrate, it is better to form the second metal pattern on the substantially entire surface (surface) of the optical element mounting surface of the substrate; furthermore, if the back surface of the substrate is widely formed from the same or the same material When the metal pattern is formed, the thermal deformation of the substrate can be further controlled, and the effect is better.

When the metal pattern on the surface of the substrate is extended to the back of the substrate, if a through hole is formed on the substrate and the material of the metal pattern is passed through the through hole, the pattern on the surface of the substrate and the pattern on the back of the substrate can be connected. Since the electrical terminal is pulled out from the surface where the optical element is mounted to the back, it is not necessary to provide a place not covered by the sealing member of the optical element for the electrical terminal on the surface where the optical element is mounted on the substrate. Materials with good mass production can be selected. At this time, if the substrate does not have a through hole, the sealing member of the optical element on the surface where the optical element is mounted will not be exposed to the back surface. In addition, when the through hole is formed at the mounting position of the optical element, the heat of the optical element will be released to the outside through the metal pattern material in the through hole, so the heat dissipation efficiency will be improved, and it is especially suitable for group III nitride compound semiconductors with high calorific value. Light-emitting element.

The formation of the first and second metal patterns is not particularly limited. In the embodiment, screen printing of tungsten glue is performed on the inorganic material substrate, followed by grilling, and the W metal pattern is formed on the inorganic material substrate. Secondly, Ni is formed on the W layer to form a metal pattern composed of W\Ni, and then heated; W\Ni\Ag is then plated with silver on the Ni layer.

The above-mentioned metal layer is formed by sputtering or other well-known methods.

As for the backside of the substrate that does not require a complicated and correct pattern shape, a metal film like copper foil can also be used.

(Sealing member)

Inorganic sealing members are transparent to the wavelength of light received and emitted by optical elements. Although there are no special restrictions as long as they are used to protect optical elements, considering that the heat-resistant temperature of optical elements is 600°C, it is best to use A low melting point glass with a low melting point (softening point) is preferable.

In addition to lead glass or Chalcogen compound glass, the low melting point glass can also use SiO₂-Nb₂O₅Department, B₂O₃-F series, P₂O₅-F series, P₂O₅-ZnO series, SiO₂-B₂O₃-La₂O₃Or SiO₂-B₂O₃Tie. The above-mentioned low-melting glass can be hot-pressed at 350~600°C.

It is also possible to disperse a fluorescent material in the first sealing member. The fluorescent material uses inorganic fluorescent powder, which can be mixed in the low melting point glass. In addition, rare earth ions can also be doped into low melting point glass to produce fluorescence. After proper combination of light-emitting elements and fluorescent materials, light of any color such as white light can be obtained.

In the combination of the sealing member and the optical element, the Abbe number of the sealing member is 40 or less, the refractive index is 1.6 or more, and the light-receiving wavelength of the optical element is 546.1nm (the wavelength of the e-line of Na). That is, in terms of the external quantum efficiency of the light emitted in the high refractive material, the higher the refractive index of the sealing material relative to the emission wavelength, the better. The refractive index of optical materials is defined by the d-line of Na. Generally, the shorter the wavelength, the higher the refractive index, and the degree of change of the refractive index relative to the wavelength is expressed by the Abbe number. In particular, in addition to preventing short-wavelength light-emitting elements that have previously been a problem when resin sealing, the present invention has selected materials with a high refractive index in the d-line of Na and a large change in refractive index with respect to the wavelength, so that the resin becomes In addition to the problem of yellow, resulting in a decrease in light output, it is also possible to achieve sealing with a material with a high refractive index relative to a short wavelength to obtain a higher external quantum efficiency.

The low melting point glass with this optical characteristic can be SiO₂-Nb₂O₅Is glass, in which SiO is used₂-Nb₂O₅-Na₂O glass is better.

The sealing member composed of plate-shaped low-melting glass is superimposed on the optical element, and it is heated to soften it, and then the light-emitting element can be surrounded by the sealing member. In order to prevent air from being mixed between the sealing member and the optical element, the heating is preferably performed under a reduced pressure environment. With this heating, a chemical reaction occurs between the interface between the low melting point glass and the metal pattern, so that the two can be bonded firmly.

A concave-convex structure can be formed on the softened sealing member superimposed on the optical element. For example, when a concave portion (thin portion) is provided on the sealing member along the dividing line of the inorganic material substrate, the dividing operation is easier; in addition, sealing On the component, the convex parts corresponding to the crystal grains and the concave parts along the dividing line are formed into a fine grid shape, so that the thermal deformation will not correspond to the size of the plate before forming the concave-convex structure, but the size of the fine grid shape Therefore, the thermal deformation of the sealing member can be reduced; even if there is a large thermal expansion coefficient difference between the sealing member and the substrate, the substrate and the sealing member will not easily peel off, which can alleviate the problem of substrate bending.

When the convex part of the sealing member is made into a convex lens shape, the light emitted by the light-emitting element can be concentrated in the direction of the optical axis, and the external light can be concentrated toward the light-receiving element; at this time, the material of the sealing member is preferably high-refractive Rate of material.

When bonding the sealing member in a softened state to the optical element, it is best to perform it under reduced pressure, because it can prevent air from being enclosed in the sealing member; the uneven structure of the sealing member can be used after bonding the sealing member and the optical element , The sealing member is formed by hot pressing while maintaining the softened state or reheating to soften the sealing member.

Hereinafter, embodiments of the present invention will be described.

(Twelfth embodiment)

The optical element of this embodiment uses the flip-chip Group III nitride compound semiconductor light-emitting element 3010 shown in FIG. 65, and this light-emitting element emits blue light.

The specifications of each layer of the light-emitting element 3010 are as follows:

<img file="TWI246780B_D0003.tif" />

The n-type layer 3013 made of GaN doped with n-type impurity silicon (Si) is formed on the substrate 3011 through the buffer layer 3012. At this time, the substrate 3011 uses sapphire, but it is not limited to this. Sapphire, spinel, silicon carbide, zinc oxide, magnesium oxide, manganese oxide, zirconium boride, group III nitride compound semiconductor single crystal, etc. can also be used . Furthermore, the buffer layer is formed by the MOCVD method using AlN, but it is not limited to this, and GaN, InN, AlGaN, InGaN, and AlInGaN can also be used as materials, as well as molecular wire crystal growth method (MBE method), hydride vapor phase epitaxy Crystal method (HVPE method), sputtering (Sputter) method, ion plating (Ion Plating) method, etc. When a group III nitride compound semiconductor is used as a substrate, the buffer layer can also be omitted.

After the semiconductor element is formed, the substrate and the buffer layer can be removed as necessary.

At this time, the n-type layer 3013 is formed of GaN, but AlGaN, InGaN, or AlInGaN can also be used.

In addition, the n-type layer 3013 is doped with n-type impurities-silicon, but Ge, Se, Te, C, etc. can also be doped as n-type impurities.

The layer 3014 including the light-emitting layer can also include a quantum well structure (multiple quantum well structure or single quantum well structure), and the structure of the light-emitting element can be single-hetero type, double-hetero type, and homogeneous Joining and so on.

The part of the layer 3014 including the light-emitting layer, the p-type layer 3015 side may include a group III nitride-based compound semiconductor layer doped with Mg, etc., with a wider band gap, because it can effectively prevent The case where electrons injected into the layer 3014 containing the light-emitting layer diffuse to the p-type layer.

A p-type layer 3015 is formed on the layer 3014 including the light-emitting layer. The p-type layer 3015 is composed of GaN doped with Mg as a p-type impurity. The p-type layer 1015 may be AlGaN, InGaN or InAlGaN, and the p-type layer 3015 may be AlGaN, InGaN, or InAlGaN. Type impurity can also use Zn, Be, Ca, Sr, Ba. After introducing p-type impurities, electron beam irradiation, boiler heating or plasma irradiation can be used to reduce electrical resistance. In the light-emitting element of the above-mentioned configuration, each group III nitride compound semiconductor can be formed by MOCVD under general conditions, or molecular wire crystal growth method (MBE method), hydride vapor phase epitaxy method (HVPE method), sputtering Sputter method, Ion Plating method, etc.

The n-electrode 3018 is composed of two layers of Al and V. After the p-type layer 3015 is formed, the p-type layer 3015, the light-emitting layer 3014, and the n-type layer are removed by etching to expose the n-type layer on the surface. The molding layer 3013 is formed by steaming.

The p-electrode 3016 is laminated on the p-type layer 3015 by vapor deposition. After each layer and each electrode are formed through the above steps, the next step is the cutting step of each chip.

Next, an inorganic material substrate on which the light-emitting element 3010 is mounted is prepared.

The base material of the inorganic material substrate 3021 of the embodiment is AlN, and metal patterns 3023, 3024 are formed on the upper and bottom surfaces; wherein, as shown in FIG. 66, the upper pattern 3023 is composed of first metal patterns 3025n, 3025p, and second metal patterns 3026. The first metal pattern 3025n is connected to the n-electrode 3018 of the optical element 3010 through the gold bump 3027, and the first metal pattern 3025p is connected to the p-electrode 3016 of the optical element through the gold bump 3028. As shown in FIG. 67, the first metal pattern 3025n penetrates through the through hole 3031 of the base material provided on the inorganic material substrate 3021, and is electrically combined with the metal pattern 3024n on the back of the substrate; similarly, the first metal pattern 3025p penetrates through the through hole 3032, electrically connected to the metal pattern 3024p on the back of the substrate. As shown in Figure 68 (enlarged view of important parts in Figure 67), copper (Cu) is filled in the through holes 3031 and 3032 by electroplating.

The second metal pattern 3026 is formed away from and surrounds the area of the first metal patterns 3025n and 3025p.

As shown in Figure 69, the metal patterns 3024n and 3024p on the back side are preferably formed as large as possible. In this way, when a large area pattern composed of a metal material with a thermal expansion coefficient between the sealing member and the substrate is combined with the back surface of the substrate 3021, The deformation of the heat-treated substrate 3021 is as close as possible to the deformation of the sealing member 3029; in this way, the bending of the substrate 3021, or the peeling between the sealing member and the substrate, etc. can be reliably prevented.

The method of forming each metal pattern is as follows: firstly, tungsten glue is applied to both sides of the inorganic material substrate 3021 before grilling with through holes formed by the screen printing method, and the through holes formed with through holes, and then the temperature exceeds 1500°C. The temperature grills the AlN substrate and burns the tungsten glue to the substrate 3021; thereby, the tungsten and the AlN substrate are strongly combined, and the tungsten can also be formed by sputtering. In addition, high melting point metals such as Mo can also be used instead of tungsten.

Next, Ni is electroplated on the W pattern, and then heated at 700° C. to cause Ni and W to react, whereby the metal pattern is strongly bonded to the AlN substrate 3021.

Ni has a strong chemical bond with the sealing member made of inorganic permeable material, and the inorganic material of the sealing member in a softened state has a good bond with Ni. The material of the sealing member and the second electrode pattern are comprehensive Sexual contact can prevent the generation of bubbles, and there is a high degree of bonding between the two.

On the first metal patterns 3025n and 3025p, it is preferable that the gold bumps on the Ni layer can be used for good bonding, and the Ag layer with high reflectivity is formed; in addition, if a reflective surface is to be formed on the bottom surface of the light-emitting element It only needs to consider the bonding properties of the gold bumps. For example, in blue light emitting devices, an Au layer can also be formed on the Ni layer.

The through holes 3031 and 3032 are formed directly under the first metal patterns 3025n and 3025p, so the heat of the optical element 10 can be efficiently released to the outside (the back surface of the metal pattern 3021) through the metal material in the through holes.

Next, as shown in FIG. 67, the light-emitting element 3010 is mounted in a predetermined position by the gold bumps 3027 and 3028; in addition, the bump 3027 is connected to the n-electrode 3018 of the light-emitting element 3010, and the bump 3028 is connected to the light-emitting element The p-electrode 3016 of 3010 is connected. In the state shown in FIG. 66, the light emitting element 3010 is surrounded by the first metal patterns 3025n and 3025p.

Next, as shown in FIG. 67, the plate-shaped low-melting-point glass of the sealing member is overlapped on the surface of the substrate 3021, and then heated and fused in a reduced pressure environment to seal the light-emitting element 3010. Thereby, the Ni on the surface of the metal pattern will pass through the oxide on the Ni surface and the low melting point glass 3039 to form a chemically strong bond, and the occurrence of residual bubbles during sealing can be prevented.

When the plate-shaped low-melting-point glass is in a softened state, it is best to perform hot pressing to form a concave-convex structure; when the concave portion of the sealing member 3039 is consistent with the dividing line 3037 (Notch) of the substrate 3021, the dividing operation of the substrate is easier; When the concave portion of the member 3039 is in the shape of a lens, the light extraction efficiency can be improved.

In the above series of manufacturing steps, the light-emitting element 3010 and the first metal patterns 3025n, 3025p are connected through the high melting point gold bumps 3027, 3028 through the temperature during processing, and the gold bumps are not affected by the sealing temperature. soften. Therefore, during the sealing operation, even if the light-emitting element is stressed, the light-emitting element 3010 will not deviate from the specified position. In addition, when the flip-chip light-emitting element 3010 is used, the bonding wire can be omitted, so it is mechanically stable. It can be said that it is quite suitable for the mass production steps of the optical device of this structure.

Furthermore, the thermal expansion coefficient of the Ni layer, which occupies most of the film thickness of the metal pattern, is 12.8×10^-6/°C, is the thermal expansion coefficient of AlN (4.5×10^-6/°C) and the thermal expansion coefficient of low melting point glass 303039 (17.3×10^-6/°C).

When there is a metal pattern between the inorganic sealing member 3039 and the inorganic material substrate 3021, the sealing member 3039 and the substrate 3021 can not only be firmly bonded, but can also alleviate the stress caused by the difference in thermal expansion coefficient between the sealing member 3039 and the substrate 3021. Therefore, it is possible to reliably prevent the substrate 3021 from being bent or broken, or the sealing member 3039 and the substrate 3021 peeling off. Finally, the substrate 3021 is divided along the dividing line 3037 to obtain the optical device of the embodiment.

Fig. 70 to Fig. 73 show the state of a modification of this embodiment. In Figs. 70 to Fig. 73, the same elements as those in Fig. 22 are assigned the same reference numerals, and the description is omitted.

In the optical device of FIG. 69, the second metal pattern 3041 has a rectangular ring shape.

In the optical device of FIG. 70, the second metal pattern 43 is a discontinuous body.

In the example of Fig. 72, the substrate of the flip-chip light-emitting element is a GaN substrate 3011a or SiC substrate instead of a sapphire substrate; this element substrate has a higher refractive index than the sapphire substrate, and it is combined with a high refractive index sealing member (lower When combined with melting point glass, the light extraction efficiency can be improved.

When the surrounding part of the GaN substrate 3011a is polished, the light extraction efficiency of the optical element 3010 can be further improved.

In addition, as shown in Figure 72, the base material of the inorganic material substrate 3051 is made of Al, which has a larger thermal expansion coefficient than AlN and is less expensive.₂O₃(Coefficient of thermal expansion: 6.7×10^-6/℃)。

In the example shown in Figure 73, the base material of the inorganic material substrate 3061 is Al containing glass₂O₃Then, the copper foil is attached to the entire surface of the substrate 3061, and the copper is filled in the through holes 3031 and 3032 by electroplating. When the inorganic material substrate 3061 is heated at 1000°C, Cu and Al₂O₃Will produce chemical bonding; in Al containing glass₂O₃When a Cu layer with the same thermal expansion coefficient as glass is formed on the back of the substrate in a wide range, it can prevent the problem of bending of the substrate or peeling between the sealing member and the substrate.

The first metal pattern and the second metal pattern are made of the same basic material (copper foil), and only the areas where the light-emitting elements are mounted-3025n and 3025p are plated with Ag or Au; this operation only needs to cover the area of the second metal pattern (Masking) can be easily formed.

In addition, nickel can also be plated on the base material-copper foil, which can be used as the second metal pattern reflective layer of the blue light emitting device. In this way, there is no problem even if the first metal patterns 3025n and 3025p and the second metal pattern 3026 are not in a separated state.

(13th embodiment)

FIG. 74 shows the optical device of this embodiment. The light-emitting element 3100 in this embodiment has electrodes on the upper and lower sides, so a bonding wire 3101 is required.

A through hole 3111 is formed on the inorganic material substrate 3110 made of AlN, and the through hole 3111 is filled with Cu by an electroplating method. A large-area metal pattern made of W/Ni is formed on both sides of the substrate 3110. The method of forming the metal pattern is the same as that of the twelfth embodiment.

In order to improve the heat release efficiency, one of the electrodes of the light-emitting element 3100 is mounted on the first metal pattern 3113a of the through hole 3111, and the bonding wire 3101 is pulled out from the other electrode, and then it is bonded to the second metal pattern 3113a. On the metal pattern 3113.

In addition, prepare a plate-shaped Spacer 3120 composed of low melting point glass. The spacer 3120 is formed with holes for the light-emitting element 3100 and the bonding wire 3101 to pass through, and is not interfered by the light-emitting element and the connection. Ground the spacer 3120 on the substrate 3110 (as shown in Figure 74), and in this state, install the sealing member 3130 made of low-melting glass; although the bonding wire 3101 may be affected by the material of the sealing member Deformation may occur, but the deformation can be controlled by the spacer 3120, so that the disconnection or short circuit of the bonding wire 3101 can be prevented in advance. In addition, in order to protect the bonding wire 3101, it is preferable to wrap the spacer 3120 below the bonding wire 3101.

The embodiments shown in FIGS. 75 to 83 will be described in detail below.

(Light-emitting element)

Light-emitting elements include light-emitting diodes, laser diodes, and other light-emitting elements and light-receiving elements. The receiving and emitting wavelength of the light-emitting element is not limited to a specific wavelength, and it can also be used in a Group III nitrogen compound semiconductor element that is effective in the range of ultraviolet light to green light, or a GaAs-based semiconductor element that is effective in red light. In addition, light-emitting elements formed of SiC, AlInGaP, etc. can also be used.

As mentioned above, the Group III nitride compound semiconductor light-emitting device with an insulating substrate has the problem of heat dissipation. When the light-emitting device is used as a white light source, high output is required.

Group III nitride compound semiconductors are generally represented by AlxGaYIn1-X-YN (0&lt;X1, 0Y1, 0X+Y1). Among them, there are 2-membered AlN, 3-membered AlxGal-xN and AlxInl-xN (where 0&lt;X&lt;1). In group III nitride compound semiconductors and GaN, at least a part of group III elements can be substituted with boron (B), thallium (Tl), or the like. In addition, part of nitrogen (N) can also be replaced with phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), etc.

In addition, group III nitride compound semiconductors can contain any dopants, and n-type impurities can use silicon (Si), germanium (Ge), selenium (Se), tellurium (Te), carbon (C) Wait. For p-type impurities, magnesium (Mg), zinc (Zn), beryllium (Be), calcium (Ca), strontium (Sr), barium (Ba), etc. can be used. In addition, after the p-type impurity is doped, it is not necessary to heat the group III nitride compound semiconductor by electron beam irradiation, plasma irradiation, boiler or the like.

The group III nitride compound semiconductor layer is formed by the MOCVD (metal organic vapor phase epitaxial growth) method, but it is not necessary to form all the semiconductor layers constituting the device by the MOCVD method, and the molecular wire crystal growth method (MBE method) can also be used together , Hydride vapor phase epitaxy method (HVPE method), sputtering (Sputter) method, ion plating (Ion Plating) method, etc.

The structure of the light-emitting element can use the following structures: a homogeneous structure with MIS bonding, PIN bonding or pn bonding, a hetero structure or a double-hetero structure, etc. The light-emitting layer can adopt a quantum well structure (single quantum well structure or multiple quantum well structure). The light-emitting element of the group III nitride compound semiconductor can use the following two methods: (1) Face UP method: the main light receiving and emitting direction is toward the optical axis of the light device, (2) flip chip method : Turn the main light receiving and emitting direction to the direction opposite to the optical axis direction of the light device, and use the reflected light.

(Sub Mount)

If the base material of the submount base is a material with high thermal conductivity, it can be appropriately selected according to the purpose of the light-emitting device, such as AlN, Al₂O₃, SiC, Si₃N₄, Si and other inorganic materials.

The thermal expansion coefficient of the inorganic material forming the sub-mount base is between the semiconductor material of the light-emitting element and the metal material of the lead frame. Therefore, even after high heat is applied during the manufacturing process of the light-emitting device (for example, the sub-mount base is soldered to the first and second 2 Lead frame), it can also alleviate the stress caused by the difference in thermal expansion coefficient between the light-emitting element and the lead frame.

In terms of the shape of the secondary loading base, one end can be set in the first recess formed in the first lead frame, and the other end can be set in the second recess formed in the second lead frame.

When the flip-chip light-emitting element is used, since the wiring can be omitted, a large current can be applied to the light-emitting element, which not only enables the light-emitting element to produce high brightness, but also releases heat efficiently. In addition, since the wiring can be omitted, the impact resistance of the light-emitting device can be improved.

Instead of wiring, in this embodiment, a wiring pattern such as a through hole or a side metal (SIDE METAL) is formed on the secondary mounting base. With the wiring pattern, each electrode of the light-emitting element mounted on the secondary mounting base and the first There is an electrical connection between the lead frame and the second lead frame. When selecting the forming material of the metal pattern, care must be taken that the surface layer must be suitable for the bonding material that combines the pattern with the optical element; for example, when gold bumps are used as the bonding material, the surface layer of the metal pattern is formed of Au or Ag . In addition to the above-mentioned gold bumps, the bonding material for bonding the light-emitting element and the wiring pattern of the submount base can also use eutectic materials such as solder bumps or electroplated solder.

(1st lead frame, 2nd lead frame)

One end of the first lead frame is formed with a first recess, and one end of the second lead frame is formed with a second recess; the first and second recesses can be formed in the following ways: respectively for the first and second lead frames The thickness direction is formed by cutting grooves or etching. In addition, the materials of the first and second lead frames can be hot-pressed to form the first and second recesses respectively; in addition, the first and second recesses can also be formed. 2 The surface of the lead frame is provided with a convex part, and the part surrounded by the convex part is used as a concave part.

The recess is the seat of the secondary loading abutment, and its shape and depth can be appropriately designed according to the secondary loading abutment.

Install one end of the secondary loading base into the first recess, and then install the other end to the second recess, and then use solder (for example: Pb-Sn, Au-Sn) or silver formed by metal eutectic material Glue mechanically fixes the secondary loading base and the first and second lead frames.

Reduce the margin between the secondary loading base and the first and second recesses. For example, when the secondary loading base and the first and second recesses are substantially in a combined state, the installation of the secondary loading base The position will be very stable, and the positional deviation of the light-emitting element can be prevented; therefore, the light distribution characteristics of the light-emitting element when the light-emitting element is sealed by the convex lens-shaped sealing member will be very stable.

In addition, when the secondary mounting base and the first and second lead frames are substantially the same height in the state of being installed in the first recess and the second recess, it is relatively easy to control the light emitting element emitted from the side surface. Light can improve the efficiency of light extraction.

Furthermore, when the secondary loading base and the first and second lead frames are substantially the same height, and the gap between the secondary loading base and the first and second lead frames is reduced (closely coupled state), that is, two When they are substantially on the same plane, the reflectivity of the lead frame will increase.

Hereinafter, embodiments of the present invention will be described.

The light-emitting element 10 is a group III nitride compound semiconductor light-emitting element, and FIG. 75 is a cross-sectional view of its structure; as shown in FIG. 75, the light-emitting element 4010 is on a sapphire substrate, and a multilayer group III nitride compound semiconductor layer is laminated on Constituted. The visual frame of each layer of the light-emitting element 4010 is as follows:

<img file="TWI246780B_D0004.tif" />

An n-type layer 4013 made of GaN doped with n-type impurities is formed on the substrate 4011 through the buffer layer 4012. At this time, the substrate 4011 uses sapphire, but it is not limited to this. Sapphire, spinel, silicon carbide, zinc oxide, magnesium oxide, manganese oxide, zirconium boride, group III nitride compound semiconductor single crystal, etc. can also be used . Furthermore, the buffer layer is formed by the MOCVD method using AlN, but it is not limited to this, and GaN, InN, AlGaN, InGaN, and AlInGaN can also be used as materials, as well as molecular wire crystal growth method (MBE method), hydride vapor phase epitaxy Crystal method (HVPE method), sputtering method, ion plating method, electronic shower method, etc. When a group III nitride compound semiconductor is used as a substrate, the buffer layer can also be omitted.

After the semiconductor element is formed, the substrate and the buffer layer can be removed as necessary.

At this time, the n-type layer 4013 is formed of GaN, but AlGaN, InGaN, or AlInGaN can also be used.

In addition, the n-type layer 4013 is doped with n-type impurities-silicon, but Ge, Se, Te, C, etc. can also be doped as n-type impurities.

The N-type semiconductor layer 4013 may have a two-layer structure consisting of (1) a low electron concentration n layer including the light-emitting layer 4014 and (2) a high electron concentration n+ layer of the buffer layer 12.

The layer 4014 including the light-emitting layer may also include a quantum well structure (multiple quantum well structure or single quantum well structure), and the structure of the light-emitting element may be of single-hetero type, double-hetero type, and homogenous type. Joining and so on.

The part of the layer 4014 that includes the light-emitting layer, the p-type layer 4015 side may include a group III nitride compound semiconductor layer doped with Mg, which has a wider band gap, because it can effectively prevent injection When the electrons in the layer 4014 including the light-emitting layer diffuse to the p-type layer 4015.

A p-type layer 4015 is formed on the layer 4014 including the light-emitting layer. The p-type layer 4015 is composed of GaN doped with Mg as a p-type impurity. The p-type layer 4015 may be AlGaN, InGaN or InAlGaN, and the p-type layer 4015 may be AlGaN, InGaN, or InAlGaN. Type impurities can also use Zn, Be, Ca, Sr, Ba.

Furthermore, the p-type semiconductor layer 4015 may have a two-layer structure consisting of (1) a low-hole concentration p-layer including the light-emitting layer 4014, and (2) a high-hole concentration p+ layer on the electrode side.

Among the light-emitting diodes of the above-mentioned structure, each group III nitride compound semiconductor can be formed by MOCVD under general conditions, molecular wire crystal growth method (MBE method), hydride vapor phase epitaxy method (HVPE method) can also be used , Sputter method, ion plating (Ion Plating) method, electronic bath method, etc.

The n electrode 4018 is composed of two layers of Al and V. After the p-type semiconductor layer 4015 is formed, parts of the p-type layer 4015, the light-emitting layer 4014, and the n-type semiconductor layer 4013 are removed by etching , The n-type layer 4013 exposed on the surface is formed by evaporation.

The P electrode 4016 is a film-shaped electrode containing gold, which is laminated on the p-type semiconductor layer 4015 by evaporation.

After forming each semiconductor layer and each electrode through the above steps, the next step is the cutting step of each chip.

As shown in FIG. 76A, the sub-mounting base 4020 is an insulating plate-shaped member made of AlN, with surface electrodes 4021 and 4022 formed on the upper surface and back electrodes 4023 and 4024 on the back surface. The electrodes 4021, 4022, 4023, and 4024 are laminated in the order of tantalum, nickel, and gold, and conduct electricity through vias 4025 (filled with conductive metal).

The secondary loading base 4020 of this embodiment connects the surface electrodes 4021, 4022 and the back electrodes 4023, 4024 through through holes; it is also possible to form a metal layer (side metal layer) on the side of the secondary loading base 4020, and perform both Conduction.

The n-electrode of the light-emitting element 4010 is electrically connected to the surface electrode 4021 through the gold bump 4031, and the p-electrode is electrically connected to the surface electrode 4022 through the gold bump 4032. Solder balls can also be used to replace the bumps. piece.

The edges of the first lead frame 4041 and the second lead frame 4042 have grooves 4043 and 4044 formed by cutting, respectively; the shapes of the grooves 4043 and 4044 are based on the shape of the secondary loading base 4020 so that there is almost no gap at both ends The shape is embedded; by this, the position of the secondary loading base 4020 will be fixed; the first lead frame 4041 and the second lead frame 4042 and the secondary loading base 4020 are soldered (Sn-Ag based solder paste) 4035 Fix it.

In this embodiment, in order to make the surface of the first and second lead frames 4041, 4042 and the surface of the secondary loading base 4020 at the same height, the depth of the groove 4043 and the groove 4044 can be adjusted; Control the light emitted from the light emitting element 4010 (especially the light emitted to the side).

In addition, a structure in which the depth of the trench is deepened and the light emitted by the light-emitting element 4010 is reflected by the sidewall of the trench can also be adopted.

Then, as shown in FIG. 77, the light-emitting element 4010 is covered with the sealing member 4051 to form the light-emitting device 4050 of the embodiment; by mixing the fluorescent material in the sealing member 4051, any light-emitting color such as white can be obtained. The sealing member 4051 can be selected from the materials that allow the light emitted by the light-emitting element to pass through, and can be appropriately selected according to the purpose of the light-emitting device; for example, epoxy resin, polyimide, and elastomer can also be used. Such as organic materials and inorganic materials such as low-melting glass. In this embodiment, the sealing resin 4051 is formed using imine resin that can withstand the reflow furnace process, and then the first and second lead frames 4041 and 4042 are welded to the secondary loading base.

FIG. 78 shows another type of sealing member 4053. In this example, the edges of the first and second lead frames 4041 and 4042 and the secondary loading base 4020 are also covered with sealing resin. The sealing member 4053 is formed by mold molding after fixing the secondary loading base 4020 to the first and second lead frames 4041 and 4042. The molding material can be epoxy resin.

With the light-emitting device 4050 of this embodiment constructed in the above-mentioned manner, the heat generated by the light-emitting element 4010 can be transmitted to the first and second lead frames 4041 and 4042 almost equally through the secondary loading base 4020; therefore, Fully ensure the heat transfer path and improve the heat release efficiency.

In addition, the position of the sub-mounting base 4020, that is, the position of the light emitting element 4010 is defined by the groove 4043 and the groove 4044, so the light distribution characteristics of the light emitting device will be stable.

Hereinafter, the modification of each element of the above-mentioned embodiment will be described.

When the same elements as those shown in FIGS. 77 to 78 are the same elements, the same reference numerals are assigned, and the description is omitted.

The example in Fig. 80 is to shorten the groove 4045 of the first lead frame 4041 and lengthen the groove 4046 at the second lead frame 4042; thereby, the member of the second lead frame 4042 (the circumference of the groove 4046) will be It is located directly below the light-emitting element 4010; therefore, the distance between the light-emitting element 4010 and the lead frame will be the shortest, and the heat emitted by the light-emitting element 4010 can be dissipated more efficiently.

In the example of FIG. 80, the groove 4047 and the groove 4048 extend to the sides of the lead frames 4041 and 4042, so that the secondary loading base 4020 can be easily installed in the groove 4047 and the groove 4048.

In the example of FIG. 81, a groove 4049 is formed on the side of the first lead frame 4041; in this embodiment, the formation direction and formation position of the groove of the lead frame can be set arbitrarily, and can be appropriately selected according to the purpose of the light emitting device.

The example in Figure 82 is to perform hot press processing on the front ends of the first and second lead frames 4041 and 4042 to form the left-hand opening recesses 4061, 4062; the secondary loading base can be mounted to the recess as shown in Figure 76 4061, 4062.

The example in Fig. 83 is to perform hot press processing on the front ends of the first and second lead frames 4041 and 4042 to form convex portions 4071, 4072 with an open shape on the left; the portions surrounded by the convex portions 4071, 4072 are concave portions 4073, 4074 ; As shown in Figure 76, the secondary loading base can be installed to the recesses 4073, 4074.

FIG. 84 is a cross-sectional view of the structure of a light-emitting device related to the 13th embodiment. The light-emitting device 5010 is composed of the following parts: (1) a substrate 5011 as a power supply member, and (2) mounted on the substrate 5011 The upper LED element 5012, (3) the buffer layer 5013 sealed by covering the LED element 5012 on the substrate, (4) the sealing member formed by covering the buffer layer 5013 and the upper part of the substrate 5011 5014.

The substrate 5011 has the following parts: (1) a ceramic substrate 5011a (insulating substrate) with a high coefficient of expansion, (2) wiring layers 5011b, 5011c, 5011d, 5011e formed on the ceramic substrate 5011a in a predetermined pattern, (3 ) Wiring layers 5011f, 5011g formed in a predetermined pattern under the ceramic substrate 5011a, (4) Gold plating film 5011h covering the surface of the wiring layer 5011c, (5) Gold plating film covering the surface of the wiring layer 5011d 5011i, (6) the gold-plated film 5011j covered on the surface of the wiring layer 5011f, (7) the gold-plated film 5011k covered on the surface of the wiring layer 5011g, (8) the through hole 50111m connecting the wiring layer 5011b and the wiring layer 5011f, (9) The through hole 5011m connecting the wiring layer 5011d and the wiring layer 5011g.

The ceramic substrate 5011a can use, for example, Al containing glass components₂O₃(Coefficient of thermal expansion 13.2×10^-6/°C); The function of the wiring layers 5011b, 5011d, 5011j, and 5011g are electrodes that can supply power. In addition, the purpose of arranging the gold-plated films 5011h, 5011i, 5011j, 5011k is to improve connectivity, conductivity, corrosion resistance, etc.; in addition, the substrate 5011 needs to be preformed on the ceramic substrate 5011a before the gold-plated film 5011h, 5011i, 5011j, 5011k and through holes 50111, 5011m.

The LED element 12 is made of semiconductors such as GaN and AlInGaP, and its crystal grain size is 0.3×0.3 mm (standard size), 1×1 mm (large size), and the like. The buffer layer 5013 is made of silicon resin, and the sealing member can be made of "K-PSK100" (thermal expansion coefficient 11.4×10) made by Sumita Optical Glass.^-6/℃)。

The sealing member 5014 uses a glass material with translucency and low melting point characteristics; the LED element 5012 has electrodes 5012a, 5012b for power supply, and the electrodes 5012a, 5012b are soldered to a predetermined wiring layer of the substrate 5011.

The method of assembling the light-emitting device 10 will be described below.

First, the electrodes 5012a and 5012b are arranged on the wiring layers 5011c and 5011d of the substrate 5011, the LED element 5012 is positioned, and the wiring layer 5011c and the electrode 5012a, and the wiring layer 5011d and the electrode 5012b are soldered, respectively.

Next, the liquid silicone material is dropped from directly above the center of the LED element 5012, and the entire top and side surfaces of the LED element 5012 are layered to form a buffer layer 5013.

Next, with the buffer layer 5013 formed, the substrate 5011 and the LED element 5002 are placed in an environment of about 150° C., and the buffer layer 5013 is cured for the first time.

Secondly, the surface of the buffer layer 5013 and the surface of the substrate 5011 are sealed by the sealing member 5014 made of glass material; the sealing member 5014 is sealed by using a mold under a specified temperature environment and pressure to form a half as shown in Fig. 84 Round; the light-emitting device 5010 is completed by the above method. When the silicone resin is used for glass sealing processing, the chemical bond will be interrupted due to heat, and the SiO₂It will not be blackened, and will not become an element of light absorption.

In the light-emitting device 5010 with the above configuration, when the wiring layer 5011f is the anode (Anode) of the LED element 5012, the wiring layer 5011f is connected to the positive electrode (P1us) of the DC power supply (not shown), and the wiring layer 5011g is connected to the negative electrode. (Minus) connection. Through the bump 2 electrically connected to the attenuation electrode 5108 and the n-type electrode 5109, when a forward voltage is applied to the LED element, the holes (Hole) and the electron carriers (Carrier) of the light-emitting layer in the LED element 5012 will again Combine and emit light, and the light output will pass through the sapphire substrate 5101 and be emitted to the outside of the LED element 5012. Almost all the light will penetrate the inside of the sealing member 5014 and be released to the outside of the sealing member 5014, and part of the light will be reflected inside and then emitted to the outside of the sealing member 5014.

According to the thirteenth embodiment, the following effects can be obtained.

(1) When the whole is sealed with a glass sealing member 5014, it can reduce the problem of yellowing and coloring that cause light attenuation, etc., which become a problem during resin sealing.

(2) When the buffer layer 5013 is provided around the LED element 5012, the stress generated during sealing with the sealing member 5014 can be relieved, and the stress is imparted to the LED element 5012 through the high-viscosity glass material. That is, because the buffer layer 5013 is in the middle, the LED element 5012 and the sealing member 5014 are not in direct contact, and the buffer layer 5013 can absorb the stress caused by thermal expansion and thermal contraction.

(3) When the LED element 5012 is glass-sealed through the buffer layer 5013, the LED element 5012 can be prevented from chipping. The configuration of the buffer layer 5013 is particularly effective for a large-size (1 mm×1 mm) LED element 5012 with a large contact area with the sealing member 5014.

(4) When the LED element 5012 is surrounded by the buffer layer 5013, it can prevent the short circuit between the electrodes caused by the bump 5002 being damaged by the pressure; in addition, the buffer layer 5013 can prevent the LED element from being glass sealed when the bump shape collapses. The 5012 optical axis tilt problem occurred.

(5) When the LED element 5012 is formed by splitting the wafer, the side surface of the split LED element 5012 will have small unevenness. For the glass-encapsulated light-emitting device 5010, the unevenness will be in the LED element 5012 and the sealing The interface of the component 5014 forms a part of unbalanced stress, which may even cause micro cracks. To solve this problem, when the buffer layer 5021 is provided on the side surface of the LED element 5012, it can prevent the micro-cracking of the sealing member 5014 from heat shrinking.

Fig. 85 is a cross-sectional view of a modified example of the light-emitting device related to the thirteenth embodiment. The light-emitting device 5020 is different only in that a buffer layer 5021 is provided on the side surface of the LED. This configuration alleviates the following two problems: (1) the short circuit between the electrodes caused by the pressure damage of the bump 5002, and (2) the stress generated when the sealing member 5014 is heat-shrinked. In addition, when the buffer layer is not provided on the substrate side of the LED element 5012, the light emitted by the LED element 5012 will not be hindered when taking out the light.

Fig. 86 is a cross-sectional view of a light-emitting device related to the fourteenth embodiment. The light-emitting device 5030 of Fig. 86 is an upward type and has the following parts: (1) a substrate 5031 as a power supply member, and (2) mounted on a substrate 5031 The LED element 5032, (3) a buffer layer 5033 that wraps and seals the LED element 5035 as a whole, (4) a sealing member 5034 that is formed by wrapping the buffer layer 5033 and the top surface of the substrate 5031 as a whole, (5) Wires 5035a and 5035b that connect the electrodes of the LED element 5032 and the wiring layer on the substrate 5031.

The substrate 5031 includes the following parts: (1) a ceramic substrate 5031a using an insulating substrate made of the same material as the substrate 5011 in FIG. 84, (2) wiring layers 5031b, 5031c formed on the ceramic substrate 5031a in a predetermined pattern, ( 3) Below the ceramic substrate 5031a, with the wiring layers 5031d and 5031e formed by the specified pattern, (4) the through holes 5031f connecting the wiring layer 5031b and the wiring layer 5031d, (5) the connection between the wiring layer 5031c and the wiring layer 5031e Hole 5031g. In addition, the surface of the wiring layers 5031b-5031e is provided with a gold-plated film, and this part is omitted in this figure.

The ceramic substrate 5031a can use, for example, Al containing glass components₂O₃; The function of the wiring layer 5031b~5031e is the electrode that can supply power. In addition, before mounting the LED element 5032 on the substrate 5031, wiring layers 5031b to 5031e and through holes 5031f and 5031g must be formed on the ceramic substrate 5031a in advance. The sealing member 5034 uses a glass material with translucency and low melting point characteristics.

The LED element 5032 is fixed to the wiring layer 5031c using an adhesive or the like. One of the electrodes (not shown) on the LED element 5032 and the wiring layer 5031b are connected by a wire 5035a, and the LED element 5032 is connected to the wiring layer 5031b. The other electrode (not shown in the figure) is connected to the wiring layer 5031c by a wire 5035b.

The buffer layer 5033 covers the exposed part of the LED element 5032 and the connections 5035a and 5035b. The sealing member 5034 covers the surface of the buffer layer 5033, the wiring layer exposed on the substrate 5031, or an exposed part of the substrate 5031 to form a hemispherical shape.

The method of assembling the light emitting device 5030 will be described below.

First, prepare a substrate 5031 with wiring layers 5031b-5031e and through holes 5031f, 5031g formed on the ceramic substrate 5031a, and mount the LED element 5032 on the wiring layer 5031c at a predetermined position.

Next, the LED element 5032 and the wiring layers 5031b, 5031c are joined by the wires 5035a, 5035b.

Next, drop the liquid silicon material to a specified thickness, and cover the exposed surface of the LED and the connections 5035a, 5035b.

Next, the LED element 5032 and the connections 5035a, 5035b are placed in an environment at a temperature of 150°C to initially harden the buffer layer 5033, and then a sealing member 5034 formed of glass material is formed around the buffer layer 5033; at this point, the light-emitting device 5030 is The report is complete.

In the light-emitting device 5030, when the wiring layer 5031d is the anode (Anode) of the LED element 5032, the wiring layer 5031d will be connected to the positive pole (Plus) of the DC power supply (not shown), and the wiring layer 5031e will be connected to the negative pole (Minus )connect. When energized by the above method, the LED will emit light. The light will be emitted from above the LED element 5032 as shown in the figure. Almost all the light will penetrate the inside of the sealing member 5034 and be released to the outside. The rest of the light will be sealed After being reflected inside the member 5034, it is discharged to the outside of the sealing member 5034.

In the fourteenth embodiment, since a buffer layer 5033 is provided around the LED element 5032 of the light emitting device 5030 in which the LED element 5032 is mounted in the upward type, it not only prevents the connection 5035a, 5035b from occurring when the glass is sealed The short-circuit between the electrodes caused by deformation and crushing can also prevent chipping in the vicinity of the LED element 5012 caused by the high thermal expansion of the sealing member 5034 as in the first embodiment.

When the buffer layer 5033 is not provided and the temperature after the glass sealing process is set to be higher, the LED will be damaged and the temperature is limited; and the glass sealing process is performed when the glass is in a state of high viscosity, so it cannot be avoided. External force is applied to the connections 5035a and 5035b, and it is very difficult to maintain the connections 5035a and 5035b in the desired state. For example, when the connection 5035a is destroyed by the pressure of the glass material, the problem of short circuit between the wiring layers 5031b and 5031c will occur. At this time, not only will it not emit light, it will also affect the power supply not shown in the figure. In addition, resin materials will not cause the above problems.

In an upward-facing LED element, the connection of the metal member above it is a buffer material, but once it is crushed, it will cause an electrical short circuit; therefore, even if there is no element of the buffer material, by preventing It is very important to prevent the occurrence of a breakdown to prevent electrical short circuits.

Fig. 87 is a cross-sectional view of a light-emitting device related to the fifteenth embodiment of the present invention. The light-emitting device 5040 mounts a sub-mounting base 5043 on the lead portions 5044a, 5044b, and the sub-mounting base is equipped with LED elements 5041; , Figure 87 shows the secondary loading abutment in a non-sectional state.

The light-emitting device 5040 has the following parts: (1) LED elements 5041 with bumps 5042 provided on the mounting surface, (2) secondary mounting base 5043 with LED elements 5041 mounted, (3) as the secondary mounting base The lead portions 5044a, 5044b of the power supply member of the stage 5043 and the exposed portion of the LED element 5041 are covered with a buffer layer 5045, and (4) a sealing member 5046 formed of translucent glass for sealing the buffer layer 5045 and its surroundings.

The secondary mounting base 5043 can use, for example, AlN (aluminum nitride) with high thermal conductivity. The mounting surface of the LED element 5041 is formed with an electrode 5043a connected to the bump 5042, and the opposite side (lead frame side) is formed with a lead part 5044a. , 5044b is connected to the purpose electrode 5043b. In order to connect the electrode 5043a and the electrode 5043b, a through hole 5043c is provided in the secondary loading base 5043.

The lead parts 5044a and 5044b are formed as part of the lead frame, with a predetermined gap between the strip parts on both sides of the lead frame and the inner side, and the two lead parts are in opposite directions. One LED element is allocated one To the lead part. A part of the front end of the lead parts 5044a, 5044b is made with a thin-layer fault, and the fault part will be loaded with the secondary loading base 5043.

The buffer layer 5045 is formed of the same materials and processing methods as the buffer layers 5013, 5021, and 5033 of the other embodiments described above.

The sealing member 5046 is the same as the above-mentioned other embodiments, and uses a glass material having translucency and low melting point characteristics.

In this light-emitting device 5040, when the lead portion 5044a is a positive (+) power supply terminal, the current supplied to the lead portion 5044a passes through the lead portion 5044a, one of the electrodes 5043b, one of the through holes 5043c, and one of the electrodes 5043a One side and one of the bumps 5042 flow to the anode of the LED element 5041; and the current flowing from the cathode of the LED element 5041 passes through the other side of the bump, the other side of the electrode 5043a, the other side of the through hole 5043c, and the electrode 5043b The other side flows to the lead portion 5044b, and the LED element 5041 emits light at this time.

The method of assembling the light emitting device 5040 will be described below.

First, prepare a secondary loading base 5043 with pre-formed electrodes 5043a, 5043b and through holes 5043c, and then use bumps 5042 to mount the LED component 5041 to the specified position on the secondary loading base 5043, which will be in contact with the LED component 5041 It is electrically connected and mechanically fixed.

Next, the LED element 5041 mounted on the secondary loading base 5043 is arranged in the recess at the front end of the lead portions 5044a and 5044b in a manner that matches the direction of energization.

Next, drop the liquid silicon material to the specified thickness, and wrap around the LED5041.

Next, the LED element 5032, the secondary mounting base 5043, and the lead portions 5044a, 5044b are placed in an environment at a temperature of 150° C. to be initially cured, and then a buffer layer 5045 is formed around the LED element 5032.

A glass sheet (Glass Sheet) required to form the sealing member 5045 is arranged above and below the LED element 5041, and molds are arranged above and below the LED element 5041, respectively.

Secondly, in a predetermined temperature environment, pressurize with a mold to make the glass sheet into a predetermined shape; at this point, the light-emitting device 5040 is completed. Finally, each light-emitting device 5040 is divided from the lead frame by the other end of the lead parts 5044a and 5044b one by one.

With this 15th embodiment, when the LED element 5041 mounted on the high thermal conductivity secondary mounting base 5043 is glass-sealed, the buffer layer 5041 can prevent the LED element 5041 or the Fragmentation, peeling, etc. occurred around the secondary loading base 5043.

In addition, in the light-emitting device 5040, phosphors can also be mixed in the buffer layer 5045; at this time, the excitation light emitted by the phosphor excited by the light of the LED element 5041 and the radiated light of the LED element 5041 are both After mixing, it will produce wave-constant transformation; phosphors can be used, for example, Ce: Yttrium Aluminum Garnet (Yttrium Aluminum Garnet) which is excited by the blue light emitted by the LED element 5041 and emits yellow light.

Fig. 88 is a cross-sectional view of a light-emitting device related to the 16th embodiment of the present invention. The light-emitting device 5050 is composed of a heat-radiating member mounted on the light-emitting device 5040 of Fig. 87; A heat-radiating member 5051 is installed under the table 5052. The heat-radiating member 5051 is made of a metal material with excellent thermal conductivity such as copper.

The light-emitting device has the following parts: (1) a heat-radiating member 5051 as a heat radiator, (2) a secondary loading base 5052 mounted on the heat-radiating member 5051, and (3) the level difference between the two ends of the secondary loading base 5052 mounted on the front end Part of the lead parts 5053a, 5053b, (4) there are a pair of bumps 5042 for power supply underneath, the LED element 5041 mounted on the sub-mount base 5052, (5) a buffer that partially covers the LED element 5041 Layer 5054, (6) A sealing member 5055 made of low-melting glass that seals the buffer layer 5054 and its surroundings.

The specified range at both ends of the secondary loading base 5052 is processed by thinning the thickness to create a step. The thinned part is equipped with the front end of the lead parts 5053a, 5053b, and the front end is welded to the side surface of the wiring 5052a, 5052b. Etc. to connect. Furthermore, the secondary loading base 5052 is provided with wiring patterns 5052a and 5052b that are in contact with a pair of bumps 5042 from the top surface to the side surface.

The buffer layer 5054 is a phosphor-containing SiO that is mixed with a phosphor in a Si-based alkoxy group (alkoside), and becomes a porous state after grilling.₂In addition to buffering stress, it also has the function of changing wavelength.

As explained in the fifteenth embodiment, Ce: Yttrium Aluminum Garnet (Yttrium Aluminum Garnet) can be used as the phosphor.

The assembling method of the light-emitting device of the 16th embodiment is based on the 15th embodiment, and the repeated description is omitted here; the part above the mounting base 5052 of FIG. 88 can be completed first, and then the heat dissipating member 5051 can be attached below it. You can install it in the same way.

According to the sixteenth embodiment, the following effects can be obtained.

(1) A heat radiation member 5051 that promotes heat radiation is installed under the secondary loading base 5052. The heat generated by the lighting of the LED element 5041 can be efficiently radiated to the outside, and the sealing member 5055 made of glass can be suppressed. The occurrence of thermal expansion, thermal contraction, etc. caused by the temperature rise in order to prevent chipping and other situations.

(2) Phosphors are mixed in the buffer layer 5054, which can not only perform wavelength conversion, but also improve light extraction efficiency.

In addition, in each of the above embodiments, a reflective surface may be formed on the surface of the substrate 5011, 5031 or the lead portions 5044a, 5044b, 5053a, and 5053b to improve the light extraction efficiency.

In addition, part of the phosphor may be mixed in the part above the LED elements 5012, 5032 in the sealing members 5014, 5034, or the phosphor for wavelength conversion may be mixed in the buffer layer 5013, 5033.

In addition, use TiO₂When the ceramic material is the material of the buffer layer 5054, its refractive index has a relatively high value of 2.4, so the extraction efficiency of the light emitted by the LED element 5041 can be improved.

Furthermore, in each of the above embodiments, the number of LED elements arranged in one sealing member is one, but two or more light-emitting polycrystalline light-emitting devices may be arranged. The mounted plural LED elements can be provided with a plurality of LED elements with different luminous colors, or a configuration with a plurality of LED elements with the same luminous color. Furthermore, in terms of the driving form of the LED, all of the multiple LED elements can be connected in parallel, or connected in parallel in units of groups, and connected in series or all in series in plural units.

In addition, the sealing member 5014 used in the above description is "K-PSK100" manufactured by Sumita Optical Glass, but it is not limited to this, as long as it does not affect the light-emitting element and will be at a temperature that can be processed and sealed Softened glass is fine.

In addition, the shape of the sealing members 5014, 5034, 5046, and 5055 is a hemispherical structure in the description, but the present invention is not limited to the shape shown in the figure, and any shape such as a shape without a convex lens, a polygonal shape, a cylindrical shape, etc. .

In addition, the sealing members 5014, 5034, 5046, and 5055 are not limited to the press molding method using glass sheets during molding. For example, molten glass may be supplied to the vicinity of the LED element and then heated and molded by a mold. Sealing method.

In addition, the buffer layer 5054 is not limited to being porous. It can absorb stress, have a thermal expansion coefficient between the LED element and the sealing glass, etc., and may have a buffer effect, insulation, and heat resistance.

Fig. 89 is a cross-sectional view of the structure of a light-emitting device related to the seventeenth embodiment of the present invention. The structure of the light-emitting device 6010 has the following parts: (1) a substrate 6011 as a power supply member, and (2) a power supply with at least A pair of gold bumps 6012a, 6012b are mounted on the substrate 6011 of the LED element 6012, (3) is filled under the LED element 6012 and the insulating layer 6013 between the substrate 6011, (4) to cover the LED element 6012 and the sealing member 6014 formed above the substrate 6011.

The substrate 6011 has the following parts: (1) a ceramic substrate 6011a, (2) on the ceramic substrate 6011a, wiring layers 6011b, 6011c, 6011d, 6011e formed in a predetermined pattern, and (3) under the ceramic substrate 6011a to define The wiring layers 6011f and 6011g formed by the patterns of the above, (4) the gold-plated film 6011h covered on the surface of the wiring layer 6011c, (5) the gold-plated film 6011i covered on the surface of the wiring layer 6011d, and (6) are covered on the The gold-plated film 6011j on the surface of the wiring layer 6011f, (7) the gold-plated film 6011k coated on the surface of the wiring layer 6011g, (8) the through hole 60111 connecting the wiring layer 6011b and the wiring layer 6011f, (9) connecting the wiring layer 6011d and the wiring The through hole 6011m of the layer 6011g.

The ceramic substrate 6011a can use, for example, Al containing glass components₂O₃(Coefficient of thermal expansion 13.2×10^-6/°C); the function of the wiring layers 6011c, 6011d, 6011f, and 6011g are electrodes that can supply power. In addition, the purpose of arranging the gold-plated films 6011h, 6011i, 6011j, 6011k is to improve connectivity, conductivity, corrosion resistance, etc.; in addition, before mounting the LED element 6012 on the substrate 6011, it is necessary to form a wiring layer 6011b on the ceramic substrate 6011a in advance. 6011g, gold-plated films 6011h, 6011i, 6011j, 6011k, and through holes 60111, 6011m.

The LED element 6012 is made of semiconductors such as GaN and AlInGaP, and its crystal grain size is 0.3×0.3 mm (standard size), 1×1 mm (large size), and so on. There are electrodes 6012a and 6012b for power supply under the LED element 6012, and the electrodes 6012a and 6012b are soldered to a predetermined wiring layer of the substrate 6011.

The insulating layer 6013 is formed of silicon material, or diamond, BN, SiC, or an insulating material containing AlN powder. When using silicone resin as the silicon material, the high temperature generated by the sealing of the sealing member 6014 will interrupt the chemical bond and become SiO₂, To play the role of an insulator with heat resistance. In addition, ceramic materials formed by Si-based or Ti-based alkoxy groups (alkoside) can also be used instead of SiO formed by silicone resin.₂. In addition, diamond has a high degree of thermal conductivity. Compared with diamond, BN, SiC, and AlN have inferior thermal conductivity, but are cheaper. In addition, diamond, BN, and SiC are transparent or white, and have the characteristic of less light absorption.

The sealing member 6014 uses a glass material with translucency and low melting point characteristics. For example, "K-PSK100" manufactured by Sumita Optical Glass (thermal expansion coefficient 11.4×10^-6/°C). In addition, in the inventors' experiments, in order to obtain good bonding between ceramic and glass, the ceramic substrate 6011a and the sealing member 6014 need to be controlled to have slightly the same thermal expansion coefficient (the thermal expansion coefficient difference is 15%). The thermal expansion coefficient in this example The ratio is 0.86.

The method of assembling the light emitting device 6010 will be described below.

First, the gold bumps 6012a, 6012b are positioned so that they are on the wiring layers 6011c, 6011d, the LED element 6012 is placed on the substrate 6011, and then the insulating layer 6013 is formed by dripping, filling, or the like.

Next, the LED element 6012, the exposed surface of the insulating layer 6013, and the exposed surface of the substrate 6011 are sealed with a sealing member 6014 made of glass material; the sealing of the sealing member 6014 is formed by using a mold and applying pressure in a predetermined temperature environment. Semicircle as shown in Figure 89; the silicon material used as the insulating layer 6013 will be SiO₂Therefore, the underside of the LED element 6012 and the bumps 6012a, 6012b will be fixed, so the deformation of the bumps 6012a, 6012b, the short circuit between the bumps, etc. can be avoided. At this point, the light-emitting device 6010 is completed.

In the light-emitting device 6010 with the above configuration, when the wiring layer 6011f is the anode (Anode) of the LED element 6012, the wiring layer 6011f is connected to the positive electrode (Plus) of the DC power supply (not shown), and the wiring layer 6011g is connected to the negative electrode. (Minus) connection. Through the bump 6002 electrically connected to the p-type electrode and the n-type electrode, when a forward voltage is applied to the LED element 6012, the holes of the active layer in the LED element 6012 and the electron carriers will recombine and emit light. The output will be discharged to the outside of the LED element 6012. Almost all the light will penetrate the inside of the sealing member 6014 and be released to the outside of the sealing member 6014, and part of the light will be reflected inside and then emitted to the outside of the sealing member 6014.

According to the seventeenth embodiment, the following effects can be obtained.

(1) When the sealing member 6014 made of glass material is used to seal the whole, it can reduce the problems of yellowing and coloring that cause light attenuation, etc., which can be a problem during resin sealing.

(2) After placing a heat-resistant insulating layer 6013 under the LED element 6012 and sealing with the sealing member 6014, it can prevent the LED element 6012 from being defective when the sealing member 6014 is applied to the bumps 6012a and 6012b with high heat. The circumstances of the impact. In other words, the present invention can prevent the bumps 6012a and 6012b from being deformed and damaged due to the high heat and high pressure of the sealing member 6014, causing short circuits between the bumps.

(3) When diamond, BN, SiC or insulating materials containing AlN powder are used, the heat emitted by the LED element 6012 can be efficiently released, so the heat dissipation can be improved.

Fig. 90 is a cross-sectional view of the structure of a light-emitting device related to the eighteenth embodiment. The light-emitting device 6020 is a device using a secondary loading base 6022 and a metal lead type mounted on a lead frame. It has the following parts:( 1) LED components 6021 with bumps 6021a, 6021b are provided on the mounting surface, (2) the secondary mounting base 6022 with the LED component 6021 is mounted, (3) the secondary mounting base 6022 is mounted with the secondary mounting base 6022 as a power supply member Lead parts 6023a, 6023b, (4) Fill the insulating layer 6024 between the lead parts 6023a, 6023b and the underside of the LED element 6021, (5) to connect the edges of the insulating layer 6024 and the lead parts 6023a, 6023b including the surface of the LED element 6021 A sealing member 6025 made of translucent glass for the purpose of sealing the front end.

The secondary loading base 6022 can be made of, for example, AlN (aluminum nitride) with high thermal conductivity; the wiring layer 6022a connected to one of the bumps 6021a forms a left side opening in the area of its top, side, and bottom surfaces, and vice versa On the side, the wiring layer 6022b connected to the bump 6021b forms a left-hand opening in the area of its top, side, and bottom surfaces.

In addition, if necessary, circuits such as Zener diodes can be embedded in the secondary loading base 6022; in addition, (1) electrodes provided on the upper and bottom surfaces thereof, (2) two through holes connecting the upper and lower electrodes can also be used. The wiring mechanism formed by the combination of the above replaces the wiring layers 6022a and 6022b.

The lead parts 6023a, 6023b are made of copper or iron-based metal, and are used as part of the lead frame not shown in the figure. The strip parts on both sides of the lead frame and the inner side maintain a predetermined gap, and the two lead parts face each other. The method is formed, and one LED element is assigned a pair of lead parts. A part of the front end of the lead parts 6023a, 6023b is made with a thin-layer fault, and the fault part will be equipped with a secondary loading base 6022.

Similar to the insulating layer 6013 of the seventeenth embodiment, the insulating layer 6024 can be made of silicon material, diamond or an insulating material containing AlN powder; the sealing member 6025 will undergo chemical bond interruption during the sealing process, and the silicon material will become SiO₂The heat dissipation effect is the same as in the case of the insulating layer 6013 in the two cases of the formation process and the use of diamond, BN, SiC or insulating materials containing AlN powder.

As in the above-mentioned embodiment, the sealing member 6025 uses a glass material with translucency and low melting point characteristics.

In the light-emitting device 6020, when the lead portion 6023a is a positive (+) power supply terminal, the current supplied to the lead portion 6023a will flow to the anode of the LED element 6021 through the lead portion 6023a, the wiring layer 6022a, and the bump 6021a; and The current flowing from the cathode of the LED element 6021 passes through the bump 6021b, the wiring layer 6022b, and then flows to the lead portion 6023b. At this time, the LED element 6021 emits light.

The method of assembling the light emitting device 6020 will be described below.

First, prepare a secondary loading base 6022 with pre-formed wiring layers 6022a and 6022b. The secondary loading base 6022 is provided with bumps 6021a and 6021b at predetermined positions, and the LED element 6021 is mounted on the bumps; , The bumps 6021a and the wiring layer 6022a, and the bumps 6021b and the wiring layer 6022b will be electrically connected to achieve mechanical fixation.

Next, the LED components 6021 mounted on the secondary loading base 6022 are arranged in the recesses at the front ends of the lead portions 6023a and 6023b in a manner that matches the direction of energization. In addition, the sequence of mounting the LED element 6021 on the secondary mounting base 6022 and then mounting the secondary mounting base 6022 on the lead portions 6023a and 6023b may also be used.

Next, fill the silicon material used as the insulating layer 6024 under the LED element 6021 and the top surface of the sub-mounting base 6022 (this filling operation can also be performed before the sub-mounting base 6022 is mounted on the lead portions 6023a, 6023b) . In this state, it is carried into the mold, and the glass sheet (not shown in the figure) for the purpose of forming the sealing member 6025 is placed above and below the LED element 6021, and then pressurized to form a hemispherical shape at a predetermined temperature ; During the sealing process, the silicon material will be SiO₂It becomes an insulating layer 6024, and fixes the bumps 6012a, 6012b under the LED element 6021, so the deformation of the bumps 6012a, 6012b or the short circuit between the bumps can be avoided; at this point, the light-emitting device 6020 is completed. Finally, one light-emitting device 6020 will be separated from the lead frame not shown in the figure by the other end of the lead parts 6023a and 6023b.

In the eighteenth embodiment, the lead portions 6023a, 6023b having excellent adhesion to the glass material are used, and the insulating layer 6024 is provided under the LED element. Therefore, when the sealing member 6025 is used for sealing, the sealing member 6025 does not Causes adverse effects on the LED element 6021, and prevents the deformation, movement, and short circuit of the bumps 6021a, 6021b from occurring. Furthermore, when the sealing member 6025 made of a glass material is used to seal the entirety, it is possible to prevent the yellowing and coloring that would occur when the sealing member is made of resin, which causes the light efficiency attenuation problems.

91 is a cross-sectional view of a light-emitting device related to the 19th embodiment, which is the same as the 18th embodiment. The light-emitting device 6030 is a metal lead type device mounted on a lead frame using a submount base; and FIG. 90 In the same way, only the main parts are shown here, and the secondary loading base 6032 is not shown in cross section. The difference between this embodiment and the eighteenth embodiment is the structure of the secondary mounting base, the structure and the formation range of the insulating layer, and so on.

The light-emitting device 6030 has the following parts: (1) LED components 6031 with bumps 6031a and 6031b are provided on the mounting surface, (2) a secondary loading base 6032 with LED components 6031 mounted, and (3) the front end portion is mounted with secondary loading The lead parts 6032a, 6032b (4) of the base 6032 as the power supply member are mixed with the phosphor 6034a and surround the LED element as a whole by dripping or filling the insulating layer 6034, (5) will include the upper part of the LED element 6031 A sealing member 6035 formed of light-transmitting glass for sealing the front end portions of the inner lead portions 6033a, 6033b.

The secondary loading base 6032 can use, for example, AlN (aluminum nitride) with high thermal conductivity. The mounting surface of the LED element 6031 is formed with electrodes 6032a, 6032b connected to the bumps 6031a, 6031b; the opposite side (lead frame side) is formed with The electrodes 6032c and 6032d for the purpose of connecting with the lead portions 6033a and 6033b. In order to connect the electrode 6032a and the electrode 6032c, and the electrode 6032c and the electrode 6032d, through holes 6032e and 6032f are provided in the secondary loading base 6032.

The lead parts 6033a and 6033b are made of copper or iron-based metals, and are used as part of the lead frame not shown in the figure. The strip parts on both sides of the lead frame and the inner side maintain a predetermined gap, and the two lead parts face each other. The way is formed, and 1 LED element is allocated with a pair of line parts. A part of the front end of the lead parts 6033a, 6033b is made with a thin-layer fault, and the fault part will be loaded with the secondary loading base 6032.

The insulating layer 6034 is mainly made of silicon material and mixed with a phosphor 6034a; in addition, when the sealing member 6025 is being sealed, the chemical bond is interrupted and becomes SiO₂The heat release effect is the same as in the case of the insulating layer 6013 in the two cases of the formation process and the use of diamond or insulating material containing AlN powder.

For the part of the phosphor 6034a, when the LED element 6021 emits blue light, Ce: Yttrium Aluminum Garnet (yttrium aluminum garnet), which is excited by the blue light and emits yellow light, can be used.

As in the above-mentioned embodiment, the sealing member 6035 uses a glass material with translucency and low melting point characteristics.

In this light emitting device 6030, when the lead part 6033a is a positive (+) power supply terminal, the current supplied to the lead part 6033a flows through the lead part 6033a, the electrode 6032c, the through hole 6032e, the electrode 6032a, and the bump 6031a to the LED The anode of the element 6031; and the current flowing out of the cathode of the LED element 6031 passes through the bump 6031b, the electrode 6032b, the through hole 6032f, the electrode 6032d, and then flows to the lead portion 6033b. At this time, the LED element 6031 emits light.

The method of assembling the light emitting device 6030 will be described below.

First, prepare a secondary loading base 6032 formed with electrodes 6032a~6032d and through holes 6032e, 6032f. The secondary loading base 6032 is provided with bumps 6031a and 6031b at predetermined positions, and the LED element 6031 is mounted on the bumps. In this way, the LED element 6031 will be electrically connected to the electrodes 6032a, 6032b through the bumps 6031a, 6031b, and achieve mechanical fixation.

Next, the LED element 6031 mounted on the secondary loading base 6032 is arranged in the recess at the front end of the lead portions 6033a, 6033b in a manner that matches the direction of energization. In addition, the sequence of mounting the secondary mounting base 6032 on the lead portions 6033a and 6033b and then mounting the LED element 6031 on the secondary mounting base 6032 may also be used.

Next, the insulating layer 6034 mixed with the phosphor 6034a is dropped or filled to reach the top surface, the side surface and the bottom surface of the secondary loading base 6032.

Next, move it into the mold, and place the glass sheet (not shown) for the purpose of forming the sealing member 6035 above and below the LED element 6031, and then press to form a hemispherical shape at a predetermined temperature to complete Light emitting device 6030. During the sealing process, the silicon material will be SiO₂It becomes an insulating layer 6034, and fixes the bumps 6031a, 6031b under the LED element 6031, so the deformation of the bumps 6031a, 6031b or the short circuit between the bumps can be avoided. Finally, one light-emitting device 6030 will be separated from the lead frame by the other end of the lead portions 6033a and 6033b.

According to the nineteenth embodiment, the following effects can be obtained.

(1) Since the insulating layer 6034 is provided, when the sealing member 6035 is used for sealing, the sealing member will not adversely affect the LED element 6031, and can prevent the bumps 6031a, 6031b from deforming, moving, and short-circuiting.

(2) The insulating layer 6034 is mixed with the phosphor 6034a, so that the electrode on the lead part (or the wiring layer on the submount base) can reduce the light absorption. Generally, the electrode or wiring layer is plated with gold, and the absorption rate of blue or violet light is high. By providing an insulating layer 6034 mixed with phosphor, the wavelength of the light emitted from the side of the LED element can be converted, and the gold-plated surface can be prevented. Light absorption.

(3) The wavelength of the light emitted from above the LED element 6031 can also be converted.

In addition, the entire sealing member 6035 made of a glass material can be used to seal the entirety, which can prevent the yellowing and coloring of the sealing member from attenuating light caused by resin.

In addition, the secondary loading base 6032 can also use the secondary loading base 6022 as shown in FIG. Conversely, the secondary loading base 6032 shown in FIG. 91 can also be used instead of the secondary loading base 6022 shown in FIG. 90.

Fig. 92 is a plan view of the bump forming surface of a standard-sized LED device. The LED element 6031 is an LED element with a length and width of 0.3mm. It is equipped with (1) a small pattern 6042 equipped with bumps 6041 connected to an n-electrode, (2) a large pattern 6043 connected to a p-electrode, and (3) mounted The bumps 6044a and 6044b on the large pattern 6043. When the LED element 6031 is of a high output type, its current increases. Therefore, the number of bumps of the p-electrode is formed in plural to correspond to the large current capacity.

Fig. 93 is a plan view of the bump forming surface of a large-sized LED element. The LED element 6031 is an LED element with a length and width of 1 mm, and is provided with (1) a wiring pattern 6054 equipped with bumps 6052a, 6052b, and (2) a wiring pattern 6055 provided with bumps 6053a, 6053b. Since the light-emitting area of the large-size LED element is larger than that of the standard size, a larger current will flow. Therefore, in order to uniformly emit light on the light-emitting surface, corresponding to the shape and area of the wiring patterns 6054 and 6055, the bumps of the electrode contacts are formed in plural.

As shown in Figure 92 and Figure 93, LED components that are electrically connected through bumps are likely to cause the bumps to collapse due to the temperature and pressure when the glass is sealed; especially as shown in Figure 93, when there are multiple bumps 6053a~6053p , Because the distance between the bumps is relatively close, when the bumps are deformed, it is quite prone to short-circuit. For this kind of LED element 6031, the insulating layer 6034 not only covers the bumps and ensures the insulation between the bumps, but also resists the pressure when the glass is sealed. Therefore, the deformation between the bumps 6053a~6053p can be controlled, and the glass material can be used to form a seal. The member 6035 becomes possible.

In addition, in each of the above-mentioned embodiments, the bumps 6012a and 6012b formed of gold are described, but they are not limited to gold, and bumps formed of solder may be used. In addition, it is not limited to bumps, and it may be a solder plating layer formed on the electrode. When using the "K-PSK100" manufactured by Sumita Optical Glass, since the sealing process is performed at a temperature exceeding 400°C and the glass viscosity during processing is high, even the gold bumps may collapse; On the other hand, the hybrid low-melting glass of inorganic-organic hybrid type can be sealed at lower temperature, but like solder bumps, when the melting point is lower than the processing temperature, even if it is under weak pressure It can also cause a short circuit between the electrodes; the present invention has its effect on the above phenomenon.

In addition, in each of the above embodiments, a phosphor layer for the purpose of wavelength conversion may be formed above the LED elements 6012, 6032 in the sealing members 6014, 6025, and 6035.

Furthermore, in each of the above embodiments, the number of LED elements arranged in one sealing member is one, but two or more polycrystalline light-emitting devices may be arranged. The mounted plural LED elements can be provided with a plurality of LED elements with different luminous colors, or a configuration with a plurality of LED elements with the same luminous color. Furthermore, in terms of the driving form of the LED, all of the multiple LED elements can be connected in parallel or in parallel in group units, and the series connection of plural units or the connection of all in series can also be used.

In addition, the sealing members 6014, 6025, and 6035 have a dome-shaped configuration in the description, but the present invention is not limited to the shape shown in the figure, and any shape such as a shape without a convex lens, a polygonal shape, and a cylindrical shape may be used.

In addition, when the sealing members 6014, 6025, and 6035 are formed, they are not limited to the pressure forming method using glass sheets, and other sealing methods may be used.

Fig. 94 is a cross-sectional view of the structure of the light emitting device related to the twentieth embodiment of the present invention. Usually, both sides of the lead frame are provided with strip parts connected to the outer sides of the lead parts, which are omitted here. In addition, multiple LED components are usually installed on the lead frame, and only one of them is shown in the second example. Furthermore, in Fig. 94, the secondary loading base shows a non-sectional state.

The light-emitting device 7010 is a metal wire mounting type, which is composed of the following parts: (1) A GaN-based LED element 7001 (coefficient of thermal expansion 4.5~6×10) bonded to the mounting surface in a flip-chip manner through bumps 7002^-6/°C), (2) the secondary mounting base 7003 equipped with the LED element 7001, (3) the lead part made of copper as the power supply member mounted with the secondary mounting base 3 (thermal expansion coefficient 15~17×10^-6/°C, thermal conductivity 400Wm^-1K^-1) 7004A, 7004B, (4) A sealing member 7005 made of transparent glass that seals the periphery of the LED element 7001 as the center.

The secondary load base 7003 can use, for example, AlN (aluminum nitride: thermal expansion coefficient 5×10^-6/°C, thermal conductivity 180Wm^-1K^-1), and the mounting surface of the LED element 7001 is formed with electrodes 7031A, 7031B connected to the bump 7002, and the opposite side (lead frame side) is formed with electrodes 7032A, 7032B connected to a pair of lead portions 7004A, 7004B. The mounting surface of the LED element 7001 above the lead portions 7004A and 7004B is processed to be lower than the other parts, and the sub-mounting base 7003 is arranged in the recessed portion. In order to connect the electrodes 7031A and 7031B with the electrodes 7032A and 7032B, a through hole 7033 is provided in the secondary loading base 7003.

Description of the sealing member 7005: heat-melt the sheet glass with the characteristics of transparency, low melting point, and thermal expansion coefficient close to the lead parts 7004A, 7004B (or within the specified thermal expansion coefficient difference) to form a Translucent glass that seals the LED element 7001, the sub-mount base 7003, and a part of the lead parts 7004A, 7004B.

When the lead portion 7004A is a positive (+) power supply terminal, the current supplied to the lead portion 7004A will pass through the lead portion 7004A, one of the electrodes 7032A, 7032B, one of the through holes 7033, one of the electrodes 7031A, 7031B, and One of the bumps 7002 flows to the anode of the LED element 7001; and the current flowing from the cathode of the LED element 7001 passes through the other of the bumps 7002, the other of the electrodes 7031A, 7031B, the other of the through holes 7033, and the electrodes The other of 7032A and 7032B flows to the lead portion 7004B, and the LED element 7001 emits light at this time.

FIG. 95 is a top view of the state where the secondary loading base is mounted on the lead frame, and the LED element 7001 is mounted in the center of the secondary loading base 7003. The lead parts 7004A and 7004B are formed as part of the lead frame, keeping a predetermined gap between the strip parts on both sides of the lead frame and the inner side, and the two lead parts face each other, and one LED element is assigned a pair of wires. Department.

Fig. 96 is a diagram of a state immediately before the glass sealing is performed using a mold, and the diagram shows a state where the parts of Fig. 95A-A are cut. Hereinafter, a method of manufacturing the light-emitting device 7010 will be described with reference to FIGS. 94 to 96.

First, the LED element 7001 provided with the bump 7002 is positioned on the sub-mounting base 7003, and reflow is performed to make an electrical connection between the bump 7002 and the electrode 7031, and mechanically fix it.

Next, the LED element 7001 mounted on the sub-mounting base 7003 is arranged in the recess at the front end of the lead portions 7004A and 7004B in a manner that matches the direction of energization. In addition, the sub-mounting base 7003 uses a base having electrodes 7031A, 7031B, electrodes 7032A, 7032B, and through holes 7033 formed in advance.

Secondly, the lead frame 7006 is carried into the mold, and glass sheets 7007 and 7008 are arranged very below the LED element 7001; the purpose of the glass sheets 7007 and 7008 is to form a sealing member 7005, the size of which can seal multiple LED elements 7001 at the same time.

Next, the upper mold 7011 is arranged to cover the glass sheet 7007, and the lower mold 7012 is further arranged to cover the glass sheet 7008. Next, in a vacuum environment, the glass sheets 7007 and 7008 are heated to 450°C to soften them, and the upper mold 7011 and the lower mold 7012 are moved in the direction of the arrow in FIG. 95 to press the glass sheets 7007 and 7008 to make The glass sheets 7007 and 7008 are formed along the concave portion of the upper mold 7011 and the concave portion of the lower mold 7012 to form a dome shape like the sealing member shown in FIG. 94.

Secondly, after removing unnecessary parts such as the strip portion of the lead frame 7004, the light-emitting devices 7010 are separated from the lead frame 7004.

The light-emitting structure of the light-emitting device 7010 is: a forward voltage is applied through the bumps electrically connected to the attenuation electrode 7108 and the n-type electrode, and the holes and electron carriers in the active layer of the LED element 7001 It will recombine and emit light, and the emitted light will be radiated to the outside of the LED element 7001 through the sapphire substrate 7101; the output light will be radiated to the outside through the sealing member 7005.

According to the twentieth embodiment, the following effects can be obtained.

(1) The sealing member 7005 of a glass material with a large thermal expansion coefficient encloses and seals the LED element with a small thermal expansion coefficient as a whole, so the internal stress caused by the difference in the thermal expansion coefficient is adjusted to the center of the LED element 7001; that is, Even if the internal stress caused by the heat shrinkage of the glass material occurs after glass processing, the internal stress becomes the compressive force toward the center of the LED element, so it will not damage the glass material with the strength that can withstand the compressive force. Glass sealing structure.

(2) The LED element with a small thermal expansion coefficient is mounted on the secondary mounting base 7003 with a small thermal expansion coefficient, and then mounted on the lead parts 7004A, 7004B with a large thermal expansion coefficient. Therefore, the glass material forming the sealing member 7005 is required to be able to It has good adhesion to the LED element 7001 with a small thermal expansion coefficient and the lead portions 7004A and 7004B with a large thermal expansion coefficient. However, it is better to choose a material with a thermal expansion coefficient close to that of the LED element 7001 for better sealing. The lead parts 7004A and 7004B formed of soft metals such as copper are more flexible than glass materials. If the thermal expansion coefficient difference between the LED element 7001 and the submount 7003 is within the range of 150% to 400%, it can not only be maintained The good adhesion between it and the glass material can also structurally absorb the stress caused by the difference in thermal shrinkage. For the above reasons, the lead parts 7004A and 7004B are clamped and sealed with glass material, and there will be no defects such as chipping.

(3) When a large amount of power is input to the LED element 7001 and high heat is generated, the LED element can also radiate heat to the outside, which can effectively prevent the reduction of luminous efficiency; especially, the secondary loading base 7003 and the lead portion 7004A, The thermal conductivity of 7004B is 100W˙m^-1˙k^-1The above effects can be achieved at the time.

(4) Since the low melting point glass sheets 7007 and 7008 are used to form the sealing member 7005, the time required for heating can be shortened, and the use of a simple heating device makes the glass sealing process easier.

(5) Since it is not easy to cause defects such as chipping during processing, it can maintain a high degree of sealing with glass material for a long time and stably. Even under water and high humidity conditions, the light-emitting conditions will not be reduced, and it can exhibit excellent durability for a long time. sex.

In addition, in the first embodiment, the LED element 7001 is explained by taking the configuration of the GaN-based LED element 7001 as an example, but the LED element is not limited to the GaN-based LED element, and other LED elements may be used.

In addition, in this embodiment, the lead parts 7004A and 7004B made of copper are mounted on the secondary mounting base 7003 as an example, but for example, the lead parts made of brass (with a thermal conductivity of 106Wm^-1K^-1) Is equipped with a secondary loading base 7003 made of silicon (with a thermal conductivity of 170Wm^-1K^-1) Is also possible.

In addition, the sealing member 7005 is not limited to a method in which a plurality of LED elements 7001 and the sub-mount base 7003 are sealed all at once using sheet glass, and a molten glass material may be supplied to the LED element 7001 and the sub-mount base. Around the table 7003, the upper mold 7011 and the lower mold 7012 are then formed by hot pressing. In addition, the glass material used is not particularly limited as long as it has translucency. Colored materials are also acceptable.

In addition, the sealing member 7005 can be formed in various shapes according to specifications, such as a circular shape, an elliptical shape, a quadrangular shape, etc., and can also have a convex lens or a shape without a convex lens.

In the twentieth embodiment, a flip-chip light-emitting device with a metal lead power supply member is described, but it can also be applied to other types of light-emitting devices. For example, a face-up type light-emitting device using wire bonding is also applicable.

Fig. 97 is a cross-sectional view of a modified example of the light-emitting device related to the twentieth embodiment. The light-emitting device 7010 has a configuration in which the corners of the secondary loading base 7003 are removed and the inclined portion 7003A is provided to prevent thermal expansion of the sealing member 7005 , Fragmentation caused by thermal shrinkage. When using this sub-mount base 7003, in addition to the excellent effects of the twentieth embodiment, a glass-sealed light-emitting device 7010 that is not prone to chipping is also possible.

Fig. 98 is a cross-sectional view of an upward-type light-emitting device related to the 21st embodiment. The light-emitting device 7040 has the following parts: (1) A lead part that is a power supply member with a gap at the front end and arranged in a horizontal direction and a straight line 7004A, 7004B, (2) A GaN-based LED element 7041 mounted above the tip of the lead portion 7004A through an adhesive or the like; (3) Two electrodes (not shown in the figure) of the LED element 7041 are connected to the lead portions 7004A, 7004B Connection 7042, (4) A sealing member 7005 made of glass material for sealing the LED element 7041 and the leading ends of the lead portions 7004A and 7004B.

The sealing member 7005 uses a transparent glass material with a low melting point and a coefficient of thermal expansion within the specified range; especially for the upward-facing type and the use of wires, the wires 7042 and 702 which are softened by heating during the sealing process The connection connecting portion 7042A is easily damaged under pressure, and is prone to short-circuit conditions. Therefore, it is best to use the lower the melting point of the glass, the better.

The method of assembling the light-emitting device 7040 will be described below.

First, in the state before the lead frame is separated, the LED element 7041 is mounted on the top surface of the front end of the lead portion 7004A; secondly, one of the electrodes 7004A on the top surface of the LED element 7041 and the top surface of the lead portion 7004A are connected by a wire 7042 , And then connect the other electrode on the top surface of the LED element 7041 with the top surface of the lead portion 7004B through a wire 7042. Next, as described in the twentieth embodiment, the glass material is formed using a mold, and a sealing member 7005 of a predetermined shape is formed. Finally, the unnecessary parts of the lead frame 7004 are removed, and the light-emitting devices 7040 are separated from the lead frame 7004.

In Figure 98, for example, when the lead portion 7004A is the anode (Anode) of the LED element 6012, the lead portion 7004A will be connected to the positive pole (Plus) of the DC power supply (not shown), and the lead portion 7004B will be connected to the negative pole ( Minus) connection. Through this energization process, the LED element 7041 will emit light, the light will be emitted from the top surface of the LED element 7041, and almost all the light will penetrate the inside of the sealing member 7005 and be released to the outside, and part of the light will be reflected inside and emitted to the seal Component 7005 outside.

With the 21st embodiment, in addition to the good effects of the 20th embodiment, considering the value of the thermal expansion coefficient between the lead portions 7004A, 7004B and the sealing member 7005, and the use of low-melting glass material, even if it is The face-up light-emitting device 7040 can also prevent peeling or chipping.

In addition, in each of the above embodiments, a reflective surface may be formed on the surface of the lead portions 7004A and 7004B to improve the efficiency of light emission.

In addition, the sealing member 7005 above the LED elements 7001 and 7042 may also be provided with a wavelength conversion portion that excites the phosphor with light of a specific wavelength.

Furthermore, in each of the above embodiments, the number of LED elements arranged in each sealing member is one, but two or more light-emitting polycrystalline light-emitting devices can also be arranged; in this case, the cover shown in FIG. 94 The structure of the crystal junction type is very suitable for the form of the light-emitting device. The mounted plural LED elements may be provided with a plurality of LED elements with different luminous colors, or may be configured with a plurality of LED elements with the same luminous color. Furthermore, in terms of the driving form of the LED, all of the multiple LED elements can be connected in parallel or in parallel in group units, and the series connection of plural units or the connection of all in series can also be used. In addition, the shape of the sealing member 7005 in the description is a hemispherical configuration with a convex lens formed on the top, but the sealing member 7005 is not limited to the shape shown in the figure, and may be any shape without a convex lens, polygonal, cylindrical, etc. shape.

In addition, when the sealing member 7005 is formed, a glass sheet is used, but it is not limited to the glass sheet method, and other sealing methods may also be used.

Fig. 99 is a flip-chip light-emitting device related to the 22nd embodiment of the present invention, (a) is a cross-sectional view, (b) is a side view viewed from the right side of (a); in addition, the configuration is the same as that of the 20th embodiment The part is expressed by adding a common number. As shown in Figure 99(a), the light-emitting device 7010 is configured to mount the sub-mount base element 7003 on the heat radiating portion 7050 made of copper, and seal it into one body with a sealing member 7005, while the sealing member 7005 is A convex lens 7005A is formed.

The sub-mounting base element 7003 is accommodated in the groove 7051 provided in the heat radiating part 7050, and the wiring pattern 7053 provided on the surface is electrically connected to the electrode of the LED element 7001 through the bump 7002 to form the power supply part. Part. After the wiring pattern 7053 is joined to the LED element 7001, it is joined to the lead portions 7004A and 7004B made of soft metal copper by soldering. As shown in FIG. 99(b), the lead portion 7004B is insulated from the heat radiating portion 7050, and the sealing member 7005 is heated and pressurized to the groove portion 7051 through a rod-shaped glass material 7052 with a rectangular cross section. At this time, the lead portion 7004A is processed in the same manner as the lead portion 7004B. The lead portions 7004A and 7004B are integrated by the glass material 7052 melted by heating and pressing and the sealing member 7005 while being insulated from the heat radiating portion 7050.

According to the 22nd embodiment, the heat radiating portion 7005 on which the sub-mount base element 7003 is mounted and the sealing member 7005 made of glass material are integrated through sealing, so that in addition to the good effects of the first embodiment, the top It can improve the heat dissipation of the heat transferred from the sub-loading base element 7003, so that not only during the glass sealing process, even when the heat generation of the LED element 7001 increases due to high current, for example, it can also obtain a A light-emitting device 7001 that has good heat dissipation and is not prone to PACKAGE fragmentation due to poor thermal expansion coefficient.

In the description of the 22nd embodiment, the heat radiating portion 7050 made of copper (Cu) is used. However, for example, a copper alloy or aluminum with good thermal conductivity and a small thermal expansion coefficient difference with the sealing member 7005 can also be used. Material. When the heat radiating portion 7050 is made of aluminum, the difference between the thermal expansion coefficient of the LED element 7001 and the secondary mounting base 7003 is 500%.

Fig. 100 is an upward-type light-emitting device related to the twenty-third embodiment of the present invention, (a) is a cross-sectional view, and (b) is a side view as viewed from the right side of (a). In addition, the same components as in the twentieth embodiment are indicated by adding common numerals. As shown in Figure 100(a), the light-emitting device 70040 is composed of: bonding the LED element 7040 to the center of the heat radiating portion 7050 made of copper, and using the wire 7042 to supply power to the lead portions 7004A, 7004B of the LED element 7040 and The electrodes of the LED element 7040 are electrically connected. In addition, the LED element 7040, the connection 7042, and the lead portions 7004A, 7004B are covered with a silicon film 7060 made of a heat-resistant silicon resin. The sealing member 7005 covers the silicon film 7060 and is also integrated with the heat radiation portion 7050. In addition, a convex lens 7005A is formed on the sealing member 7005.

With the 23rd embodiment, even the upward-type light-emitting device 7040 is covered around the LED element 7041 by the heat-resistant and elastic silicon film 7060, in addition to preventing the LED element caused by pressure during processing and sealing The electrode of 7041 or the deformation of connection 7042 can be glass sealed. In addition to the good effect of the 21st embodiment, it can also achieve the good mountability of the LED element 7041. This advantage is not only when the glass is sealed, for example, When a large current is applied and the heat generation of the LED element 7041 increases, good heat generation can be obtained; at the same time, a light-emitting device 7001 that does not cause a package crack due to a difference in thermal expansion coefficient can also be obtained. In addition, the silicon film 7060 may also contain a phosphor.

In addition, the 23rd embodiment has a configuration in which a pair of lead portions 7004A and 7004B supplies power to the LED element 7041 mounted on the heat radiating portion 7050. However, the following configuration may also be used: for example, the heat radiating portion 7050 is connected to one of the LED elements 7041. The lead part is integrated, and the glass material 7052 is used to insulate the other lead part and the heat radiating part 7050.

In addition, in addition to silicon resin, ceramic coating materials and other materials with heat resistance can also be used for coating materials. The object of the coating is not limited to upward-type LED components, but also applies to flip-chip LED components.

In addition, in LED-type light-emitting elements, when the refractive index of the light-emitting element is 2 or more, if a sealing material with a refractive index of 1.5 or more is used to seal the element, the light extraction efficiency of the element can be increased by about 2 times or more; this When the sealing material must be light-transmitting. The light-receiving element does not have this effect. When the element is directly tightly sealed with a light-transmitting material, it only has the effect of reducing reflection when the interface is of different media; if it is not an optical element, it does not need to be light-transmitting.

In addition, the Fangzhi material in the description is a glass material, but as long as it is a material that crystallizes after glass processing, it may also be an inorganic material with a high degree of chemical stability.

<p>1. . . Light-emitting device</p><p>2. . . element</p><p>3. . . Substrate</p><p>4. . . Circuit pattern (Pattern)</p><p>5. . . Gold bump (AU Stud bump)</p><p>6. . . Glass seal</p><p>7. . . Filling</p><p>8. . . Lead frame</p><p>9. . . Mold forming department</p><p>10. 5035. . . Connect</p><p>11. . . Heat-resistant inorganic material coating</p><p>12. . . Inorganic white adhesive</p><p>13. . . Ag Paste</p><p>14. . . Component coating material</p><p>15. . . Phosphor layer</p><p>17. . . Exothermic pattern</p><p>18. . . Loader</p><p>19. 7004B. . . Lead part</p><p>twenty three. . . Layer containing light-emitting layer</p><p>27. . . Translucent electrode</p><p>29. . . SiC substrate</p><p>30. . . GaN substrate</p><p>31. . . Lead frame</p><p>35. . . Silicon coating</p><p>40. . . Tungsten (W) layer</p><p>41. . . Nickel (Ni) layer</p><p>3A. . . Via Hole</p><p>3B. . . Groove</p><p>4A, 4B. . . Then use the pattern</p><p>4C. . . Gold layer</p><p>5A. . . Conductive bump</p><p>6A. . . Top</p><p>6B. . . side</p><p>6C. . . Line drawing department</p><p>9A. . . Optical shape surface</p><p>16A. . . Bottom circuit pattern (anode)</p><p>16C. . . Bottom circuit pattern (cathode)</p><p>18B. . . n layer</p><p>18C. . . P layer</p><p>19A. . . Cascade</p><p>19B. . . Lead cup</p><p>19D, 190. . . Inclined plane</p><p>60A. . . Upper glass</p><p>60B. . . Glass below</p><p>60C. . . Lead receiving groove</p><p>60D. . . Tubular body</p><p>191. . . Underside</p><p>310, 312. . . Opening</p><p>311. . . lead</p><p>313. . . Small hole</p><p>314. . . Positioning hole</p><p>5010, 5020, 5030, 5040, 5050, 6010, 6020, 6030, 7010. . . Light-emitting device</p><p>5012, 5034, 5041, 6012, 6021, 6031, 7001, 7041. . . LED components</p><p>18A, 50111, 5011m, 5031f, 5031g, 5043c, 6011m, 60111, 6032e, 7033. . . Through hole</p><p>20, 1011, 2011, 3011, 4011. . . Substrate</p><p>21, 1012, 2012, 3012, 4012, 5013, 5021, 5033, 5045, 5054. . . buffer layer</p><p>22, 1013, 2013, 3013, 4013. . . n-type layer</p><p>24, 1015, 2015, 3015, 4015. . . p-type layer</p><p>25, 28, 1017, 2016, 3016, 4016. . . p electrode</p><p>26, 1018, 4018. . . n electrode</p><p>1014, 2014, 3014, 4014. . . Layer containing light-emitting layer</p><p>1016, 1101. . . Translucent electrode</p><p>5011, 5031, 6011. . . Substrate</p><p>5011a, 5031a, 11a. . . Ceramic substrate</p><p>5011b, 5011c, 5011d, 5011e, 5011f, 5011g, 5031b, 5031c, 5031d, 5031e, 6011c, 6011d, 6011e, 6011f, 6011g, 6022a, 6022b. . . Wiring layer</p><p>5011h, 5011i, 5011j, 5011k, 6011b, 6011h, 6011i, 6011k, 6011j. . . Gold-plated film</p><p>5012a, 5043a, 5043b, 6032a, 6032b, 6032c, 6032d, 7031A, 7031B, 7032A, 7032B. . . electrode</p><p>5014, 5046, 5055, 6014, 6025, 6035, 7005. . . Sealing members 5042, 6012a, 6021a, 6021b, 6031a, 6031b, 6041, 6044a, 6044b, 6052a, 6052b, 6053a, 7002. . . Bump</p><p>5043, 5052, 6022, 6032, 7003. . . Secondary loading abutment</p><p>5044a, 5044b, 5053b, 5053a, 6023a, 6023b, 6033a, 6033b, 6032f, 7004A, 5052a, 5052b, 6054, 6055, 7053. . . Wiring pattern</p><p>5051. . . Exothermic component</p><p>5054a, 6034a. . . Phosphor</p><p>6010, 7010, 7040. . . Light-emitting device</p><p>6013, 6024, 6034. . . Insulation</p><p>6042. . . Small pattern</p><p>6043. . . Large pattern</p><p>7003A. . . Inclined part</p><p>7004. . . Lead frame</p><p>7005A. . . Convex lens</p><p>7007, 7008. . . Glass flakes</p><p>7011. . . Upper mold</p><p>7012. . . Lower mold</p><p>7011A, 7012A. . . Recess</p><p>7042. . . Bonding wire</p><p>7050. . . Exothermic part</p><p>7051. . . Groove</p><p>7052. . . Glass material</p><p>7060. . . Silicon Coating Department</p>

Fig. 1 is a light-emitting device related to the first embodiment of the present invention, in which (a) is a cross-sectional view of the light-emitting device, and (b) is a side view of a GaN-based LED element as a light source.

Fig. 2 is a first modification of the light-emitting device related to the first embodiment of the present invention, in which (a) is a longitudinal sectional view of the light-emitting device, and (b) is a side view of a Gan-based LED element of the light source.

Fig. 3 is a third modification, showing a longitudinal cross-sectional view of a light-emitting device using other filling materials.

Fig. 4 is a fourth modification, showing a light-emitting device provided with a mold part made of a resin material.

FIG. 5 shows a longitudinal cross-sectional view of the light-emitting device related to the second embodiment.

Fig. 6 is a longitudinal sectional view of a light emitting device related to a third embodiment of the present invention.

FIG. 7 shows a longitudinal sectional view of a modification of the light-emitting device related to the third embodiment.

FIG. 8 shows a longitudinal cross-sectional view of a light-emitting device related to the fourth embodiment.

Fig. 9 shows a longitudinal sectional view of a first modification of the light-emitting device related to the fourth embodiment.

FIG. 10 shows a longitudinal sectional view of a second modification of the light-emitting device related to the fourth embodiment.

FIG. 11 shows a light-emitting device related to the fifth embodiment, in which (a) is a top view of the light-emitting device, (b) is a side view of the light-emitting device, and (c) is a bottom view of the light-emitting device.

Fig. 12 shows a longitudinal sectional view of a first modification of the light-emitting device related to the fifth embodiment.

Fig. 13 shows a longitudinal sectional view of a second modification of the light-emitting device related to the fifth embodiment.

FIG. 14 shows a cross-sectional view of a light-emitting device related to the sixth embodiment.

FIG. 15 shows a first modification of the light-emitting device related to the sixth embodiment, in which (a) is a longitudinal cross-sectional view of the light-emitting device, and (b) is a side view of a GaN-based LED element as a light source.

FIG. 16 shows a second modification of the light-emitting device related to the sixth embodiment, in which (a) is a longitudinal cross-sectional view of the light-emitting device, and (b) is a side view of a GaN-based LED element as a light source.

FIG. 17 shows a light-emitting device related to the seventh embodiment, in which (a) is a longitudinal cross-sectional view of the light-emitting device, and (b) is a side view of a GaN-based LED element as a light source.

Fig. 18 is a longitudinal sectional view of a first modification of the light-emitting device related to the seventh embodiment.

FIG. 19 shows a light-emitting device related to the eighth embodiment, in which (a) is a longitudinal cross-sectional view of the light-emitting device, and (b) is a side view of a GaN-based LED element of the light source.

Fig. 20 shows a longitudinal sectional view of a light emitting device related to the eighth embodiment.

Figures 21(a) to (D show the steps of forming a circuit pattern: forming a circuit pattern with an Au layer on an AlN substrate.

Fig. 22 shows a longitudinal sectional view of a light-emitting device related to the ninth embodiment.

Figure 23 shows the state of glass sealing based on hot pressing for the lead frame.

FIG. 24 shows the state where the GaN-based LED element 2 is mounted on a silicon submount as a Zener diode.

FIG. 25 shows a light-emitting device related to the tenth embodiment, in which (a) is a top view, (b) is a cross-sectional view of (a) AA, and (c) is a perspective view of the lower glass.

Fig. 26 is a longitudinal sectional view of a first modification of the light-emitting device related to the tenth embodiment.

Fig. 27 is a longitudinal sectional view of a second modification of the light-emitting device related to the tenth embodiment.

Fig. 28 shows a light emitting device related to the eleventh embodiment, (a) is a side view, and (b) is a perspective view when glass is sealed.

Fig. 29 shows a longitudinal sectional view of a light-emitting device related to the twelfth embodiment.

FIG. 30 shows a cross-sectional view of the structure of an upward-type light-emitting element used in an embodiment of the present invention.

Figure 31 shows a three-dimensional view of a combination of a light-emitting element and a lead.

FIG. 32 shows a cross-sectional view of the manufacturing method of the optical device.

Fig. 33 shows a cross-sectional view of the optical device of the embodiment.

Fig. 34 shows a cross-sectional view of an optical device of another embodiment.

Fig. 35 shows a cross-sectional view of an optical device according to another embodiment.

Fig. 36 shows a cross-sectional view of an optical device according to another embodiment.

Fig. 37 shows a perspective view of the manufacturing method of the optical device.

Fig. 38 shows a cross-sectional view of an optical device of another embodiment.

Fig. 39 shows a cross-sectional view of an optical device according to another embodiment.

FIG. 40 shows a cross-sectional view of the manufacturing method of the optical device.

FIG. 41 shows a cross-sectional view of the structure of a flip-chip type light-emitting device.

Fig. 42 shows a cross-sectional view of an embodiment of a light device using a light-emitting element.

Fig. 43 shows a cross-sectional view of an optical device according to another embodiment.

Fig. 44 shows a cross-sectional view of an optical device of another embodiment.

Fig. 45 shows a cross-sectional view of an optical device of another embodiment.

Fig. 46 shows a cross-sectional view of an optical device of another embodiment.

FIG. 47 shows a top view of another type of assembly of a flip-chip type light-emitting device and a power receiving and transmitting device.

Fig. 48 shows a cross-sectional view of an optical device with an assembly.

Fig. 49 shows a cross-sectional view of an optical device of another embodiment.

Fig. 50 shows a cross-sectional view of an optical device according to another embodiment.

Fig. 51 shows a cross-sectional view of an optical device of another embodiment.

Fig. 52 shows a cross-sectional view of an optical device of another embodiment.

Fig. 53 shows a cross-sectional view of an optical device of another embodiment.

Fig. 54 shows a cross-sectional view of an optical device of another embodiment.

Fig. 55 shows a cross-sectional view of an optical device of another embodiment.

Figure 56 shows a cross-sectional view of the structure of the optical element.

Fig. 57 (a) to (b) show the manufacturing method of the optical device of the tenth embodiment.

Figure 58 (a) to (b) show the state of mounting the optical element on the substrate.

Fig. 59 shows the state of the configuration of the optical device of the tenth embodiment.

FIG. 60 shows a top view of the structure of the optical device of another embodiment.

Fig. 61 shows a cross-sectional view of the line BB in Fig. 60.

FIG. 62 shows a cross-sectional view of the CC part of the arrow line in FIG. 61. FIG.

Figure 63 is a bottom view.

Fig. 64 shows a top view of a light device of another embodiment.

Fig. 65 shows a cross-sectional view of the structure of the optical element of the embodiment.

Fig. 66 shows a top view of the optical device of the twelfth embodiment.

Fig. 67 is a cross-sectional view taken along the line III-III in Fig. 66;

Fig. 68 is an enlarged view of the main part in Fig. 67;

Fig. 69 is a bottom view of the optical device of the embodiment.

Fig. 70 shows the structure of the optical device of another embodiment.

Fig. 71 shows the structure of the optical device of another embodiment.

Fig. 72 shows the structure of the optical device of another embodiment.

Fig. 73 shows the structure of the optical device of another embodiment.

Fig. 74 shows the structure of the optical device of another embodiment.

Fig. 75 is a cross-sectional view of the structure of the light-emitting element.

Fig. 76 is the structure of the light-emitting device of the embodiment, in which (A) is a cross-sectional view, and (B) is a top view.

Fig. 77 is a cross-sectional view of the configuration of the light emitting device of the embodiment provided with the sealing member.

Fig. 78 is a cross-sectional view of the structure of a light emitting device of an embodiment provided with another type of sealing member.

Fig. 79 is a cross-sectional view of another type of lead frame.

Figure 80 is a top view of another type of lead frame.

Figure 81 is a top view of another type of lead frame.

Figure 82 is a perspective view of another type of lead frame.

Figure 83 is a perspective view of another type of lead frame.

Fig. 84 is a cross-sectional view of the structure of a light-emitting device related to the thirteenth embodiment.

Fig. 85 is a cross-sectional view of a modified example of the light-emitting device related to the thirteenth embodiment.

Fig. 86 is a cross-sectional view of the structure of a light-emitting device related to the fourteenth embodiment.

Fig. 87 is a cross-sectional view of the structure of a light-emitting device related to the fifteenth embodiment.

Fig. 88 is a cross-sectional view of the structure of a light-emitting device related to the sixteenth embodiment.

Fig. 89 is a cross-sectional view of the structure of a light-emitting device related to the seventeenth embodiment.

Fig. 90 is a cross-sectional view of the structure of a light-emitting device related to the eighteenth embodiment.

Fig. 91 is a cross-sectional view of the structure of a light-emitting device related to the nineteenth embodiment.

Fig. 92 is a plan view of the bump (bump) forming surface of a standard-sized LED device.

Fig. 93 is a plan view of the bump forming surface of a large-sized LED element.

Fig. 94 is a cross-sectional view of the structure of a light-emitting device related to the twentieth embodiment.

Fig. 95 is a top view of the state where the sub-mounting base (SUBMOUNT) is mounted on the lead frame.

Fig. 96 is the state before the glass is sealed with the mold.

Figs. 97 (a) to (c) are cross-sectional views of modified examples of the light-emitting device related to the twentieth embodiment.

Fig. 98 is a cross-sectional view of a face-up light-emitting device related to the 21st embodiment of the present invention.

Fig. 99 is a flip-chip light-emitting device related to the 22nd embodiment, in which (a) is a cross-sectional view, and (b) is a side view seen from the right side of (a).

FIG. 100 is an upward-type light-emitting device related to the 22nd embodiment, in which (a) is a cross-sectional view, and (b) is a side view seen from the right side of (a).