Semiconductor device and its manufacturing method

Semiconductor device and manufacturing method thereof

(Technical field)

The main purpose of the present invention is to prevent the forgery of paper or sheet media, such as various token-device media, securities, various gold certificates, important documents, IC cards, prepaid cards, etc., related to the application of semiconductor chips The technology of the realization method of the battery-free non-contact recognition method.

(Background technique)

Regarding the technology related to the present invention, the technology disclosed in Japanese Patent Laid-Open No. 8-50672 will be explained first. This technology is related to the anti-counterfeiting line identification device of various credential equipment media, embedding metal patterns such as text in various credential equipment media, and then electrically detecting whether there is metal in the pattern. Basically, for the purpose of counterfeiting by applying high-level photocopying technology only to paper, it is a method that makes it difficult to counterfeit by embedding a certain metal pattern.

Next, the prior art disclosed in the same publication, JP 8-202844, will be explained.

This technology is a technology that uses anisotropic conductive paste to bond semiconductor chips on a substrate made of paper or synthetic paper.

Furthermore, Fig. 4 shows an example of the prior art. It is shown that there is a crack 42 from the wafer 41. In this figure, it is shown that the pad 43 is on the top of the semiconductor chip 44, and the conductive particles 46 in the resin 45 may be short-circuited to the edge. Since the antenna wiring 47 is on the upper surface of the circuit board 49, the conductive particles 48 can serve as a connection with the electrode.

Figure 7 shows another previous embodiment. Then the resin 71 is a semiconductor chip with an aluminum pad 73 and a surface oxide film 74 on the surface of the silicon layer 72 of the device, which means that the conductive particles 75 are dispersed. The conductive particles 77 captured on the surface of the gold pad 77 contribute to the antenna wiring 78 is the on state. The insulator 79 is a passivation film. This figure shows the cross-sectional structure of a semiconductor chip connected with a conventional anisotropic conductive adhesive.

The present invention believes that JP-A-8-50672 disclosed as a prior art has the following problem, that is, if you want to consider countermeasures for the forgery of various credential devices, media, etc., it should be whether the method of forgery is easy or not. The added value of the previous example reveals that the metal pattern is enclosed in various credential equipment media. However, this method is not only easy to make the pattern, but also has the danger of almost rewarding forgery. Because the technology of preventing forgery can improve security and reliability at the same time, if there is no defense against high-level forgery, this kind of easy forgery prevention technology may increase the effect of forgery. This point should be considered. In this case, since the key to the detection technology is the presence or absence of metal, it is of course unpacked, and the precise implementation of the investigation can certainly clarify that there is no need for highly technical ground. In other words, since the presence or absence of a metal pattern is a necessary condition, the method of implementation (forgery) can be achieved by the usual technical level.

Regarding the problem of Japanese Patent Laid-open No. 8-202844, the present invention believes that this technology is not a purely technical problem, but a medium that considers thin materials such as paper. Therefore, it is necessary to further consider the use of paper and other media. The mechanical strength and the strength of the semiconductor chip, if the structure of the previous example is considered to be less than 100 microns, it is the idea that whether there is no mechanical stress at all to determine the problem. In other words, different constraints must be considered when mounting semiconductor chips on thin paper-like media. The thickness and size of semiconductor chips need to be reviewed. For example, when a 1mm semiconductor chip is mounted on a paper with a thickness of 100 microns, whether it can withstand the usual level of use does not depend on whether it can be fabricated in terms of structure, but whether it can be manufactured. The point of view of durability. The inventors of the present invention believe that this conventional example alone is not sufficient to produce a mounting form of a thin medium with a thickness of 100 microns or less that is sufficiently durable for practical use.

Next, the problem of the previous example in Fig. 4 will be explained. The semiconductor chip cut with a diamond knife is used to process the periphery of the semiconductor chip. Therefore, stress from the outside is applied to the semiconductor chip and the stress is concentrated on the periphery of the semiconductor chip. Cracks, such as cracks, cause part or all of the function of the semiconductor chip to be lost. When a semiconductor chip is enclosed in a thin medium such as paper, bending force or concentrated load is easy to be applied. Therefore, even if the semiconductor chip is cracked, it may cause the destruction of the semiconductor chip.

The problems of the previous example in Fig. 7 are explained below. This structure has not been considered at all. Due to the side effects caused by the gold pad and the provision of anisotropic conductive adhesive or conductive adhesive on the periphery of the semiconductor chip, in other words, the longitudinal direction caused by the existence of the gold pad is not considered at all. The increase in the size of the structure and the problem of short circuits easily caused around the semiconductor, and the existence of problems such as the fact that the semiconductor components including the gold pads become very thick as a whole, which prevents the structure with bending resistance.

(Revelation of Invention)

The first method to solve the above problems is to be:

A semiconductor device, the planar size of the semiconductor chip is 0.5mm or less on the long side. The semiconductor chip is inserted into a paper or sheet-like medium with an antenna and is characterized by sending out multiple bits of information.

The second method to solve the above-mentioned problems is to make the periphery of the semiconductor chip formed of insulating material, and the terminal on the semiconductor is connected to the semiconductor device on which the terminal of the circuit board is mounted with a conductive adhesive.

The third method to solve the above problems is to make the plane size of the semiconductor chip be 0.5mm or less on the long side, and the semiconductor chip is separated by etching to be inserted into the paper or sheet-like medium with the antenna state. Its characteristic semiconductor device.

The fourth method to solve the above-mentioned problems is to make a semiconductor device. The planar size of the semiconductor chip is 0.5mm or less on the long side. It is inserted into a paper or sheet-like medium with an antenna, and it is sent out and drawn directly by an electronic wire. The formed plural-bit information is its characteristic.

The fifth solution to the above problem is to make a semiconductor device. The planar size of the semiconductor chip is 0.5mm or less on the long side. The pad of the semiconductor chip is formed of tungsten, and the antenna is inserted into the paper or sheet-like medium. Among them, those characterized by the sending of multiple bits of information.

The sixth means to solve the above problems is to make: a semiconductor device, the planar size of the semiconductor chip is 0.5mm or less on the long side, and the pad of the semiconductor chip is on the device on the main surface of the semiconductor. The antenna is inserted into a paper or sheet-like medium and is characterized by sending out multiple bits of information.

The seventh means to solve the above problems is to make: a semiconductor device, the planar size of the semiconductor chip is 0.5mm or less on the long side, and the built-in capacitor is inserted into a paper or sheet-like medium with an antenna, and it is sent back and forth. Those characterized by digital information.

The eighth method to solve the above problems is to make a semiconductor device. The semiconductor chip has a planar size of 0.5mm or less on the long side, and is inserted into a paper or sheet-like medium with an antenna to send out multiple bits of information. , Which is characterized by encoding and printing the information on the media.

The ninth means to solve the above problems is to make: a semiconductor device, the planar size of the semiconductor chip is 0.5mm or less on the long side, and the semiconductor chip is stored on the semiconductor chip: a plurality of pieces connected to the antenna for generating random numbers on the semiconductor chip It is characterized by a smaller pad than the pad.

The tenth means to solve the above-mentioned problems is to make: a semiconductor device in which there is a memory area in the semiconductor chip that can be written, the semiconductor chip has an area in which the first random number can be generated, and the first random number is After the reading is coded and written into the memory area, a second random number different from the above random number is assigned to the semiconductor chip, and the first random number is coded and read, and then the recording area is read out. After the content returns to the second code, it is confirmed that the semiconductor chip is not forged as its characteristic.

The eleventh means to solve the above problems is to make: a semiconductor device that periodically modulates the amplitude of the carrier wave in a complex frequency unit, and assigns it to a semiconductor chip equipped with an antenna, and uses the leading edge of each period as a timing pulse. During this period, the antenna load in the semiconductor chip is changed to send out 1 bit of the information in the semiconductor chip, which is a characteristic.

The twelfth means to solve the above problems is to make: a semiconductor device that periodically modulates the amplitude of the carrier wave in a complex frequency unit and applies it to a semiconductor chip equipped with an antenna. The semiconductor chip has a counter and uses each cycle The leading edge is a timing pulse input to the counter, and then the output of the counter is used to select the output of the memory, and the antenna load in the semiconductor chip is changed during the period to send 1 bit of the information in the semiconductor chip. .

The thirteenth means to solve the above-mentioned problems is a semiconductor device in which a plurality of semiconductor chips with a maximum plane size of 0.5 mm or less share one antenna, and each semiconductor chip operates according to the load state of the antenna, which is a characteristic feature.

The fourteenth means to solve the above-mentioned problem is the semiconductor device of the eighth means, in which the size, thickness, and thickness of the semiconductor chip of the semiconductor chip that is equipped with the antenna state inserted into the paper or sheet-like medium is sent out multiple bits of information. All or part of physical information such as position and degree are encoded and printed.

The fifteenth means to solve the above-mentioned problems is to make: a semiconductor device in which the planar size of a semiconductor chip is 0.5 mm or less on the long side, and is inserted between two or less rolls in a paper or sheet-like state with an antenna. Among the media, those characterized by the sending of multiple bits of information.

The 16th means to solve the above-mentioned problems is to make: a semiconductor device in which an antenna of the size of a semiconductor chip of 0.5 mm or less than the maximum planar size is mounted on a semiconductor chip, and the plurality of semiconductor chips are inserted into a paper or a sheet. Among the media, those characterized by sending multiple bits of information without interference.

The seventeenth means to solve the above problems is to make: a semiconductor device, the planar size of the semiconductor chip is 0.5mm or less on the long side, and the semiconductor chip is inserted into a paper or sheet-like medium with an antenna to be sent back and forth. For digital information, it is characteristic that each semiconductor chip is not arranged at an integer multiple of the media's folding position.

The eighteenth means to solve the above problems is to make: a semiconductor device, the planar size of the semiconductor chip is 0.5mm or less on the long side, and the semiconductor chip is inserted into a paper or sheet-like medium with an antenna to send out a plurality of bits. According to Yuans information, the corners of the semiconductor chip are characterized by oblique cutting of more than one percent of the length of the long side.

The nineteenth means to solve the above problems is to make: a semiconductor device, the planar size of the semiconductor chip is 0.5mm or less on the long side, and the semiconductor chip is inserted into a paper or sheet-like medium with an antenna to send and return. Digital information, the semiconductor chip exists in the convex part for braille, which is its characteristic.

The twentieth means to solve the above problems is to make: a semiconductor device, the planar size of the semiconductor chip is 0.5 mm or less on the long side, and the semiconductor chip is inserted into a paper or sheet-like medium with an antenna to send and return. Digital information is characterized by the information of each semiconductor being printed on the media in the form of a coded text pattern.

The 21st means to solve the above problems is to make: a semiconductor device, the planar size of the semiconductor chip is 0.5mm or less on the long side, and the semiconductor chip is inserted into a paper or sheet-like medium with an antenna to send out multiple digits. Element information, and it is characteristic that a metal thicker than the semiconductor chip is attached to the semiconductor chip.

The 22nd means to solve the above-mentioned problems is to make: a semiconductor device, the planar size of the semiconductor chip is 0.5mm or less on the long side, and the semiconductor chip is inserted into the Japanese paper medium with an antenna to send out multiple bits. The semiconductor chip is processed as a part of the washi fiber when filtering Japanese paper, and it is characterized by being installed inside or on the surface of the washi.

The 23rd means to solve the above-mentioned problems is to be a semiconductor device such as the first means or the second to the 22nd means in the scope of the patent application. The semiconductor chip is made of a silicon wafer extending from an insulating material.

The twenty-fourth means for solving the above-mentioned problems is to be a semiconductor device of one of the first means or the second to 22nd means, wherein the semiconductor wafer is manufactured with a thickness of 50 micrometers (micron) or less.

The twenty-fifth means to solve the above-mentioned problems is a semiconductor device, which is mainly equipped with at least an antenna and an IC semiconductor chip for information transmission without electrical contact with the reader/writer. Its characteristics for:

The IC semiconductor chip has a maximum plane size of 0.5 mm or less, the antenna is formed by a pair of elongated conductors, and the width of the part connected to the IC semiconductor chip is at least one of the width of the IC semiconductor chip. The length of the side is the smaller one.

The twenty-sixth means to solve the above-mentioned problems is to be a semiconductor device, which is mainly equipped with at least a semiconductor device that implements information transmission without electrical contact with the reader/writer, and an IC semiconductor chip, and the maximum plane size In semiconductor devices with semiconductor chips below 0.5mm, the characteristics are:

The device-formed side and the opposite side of the IC semiconductor chip are equipped with the antenna formed by a thin wire-shaped conductor, and the cross section of the antenna connected to the IC semiconductor chip is higher than the above The area of the IC semiconductor chip is the smaller one.

The 27th means to solve the above-mentioned problems is to be a method of manufacturing a semiconductor device, which is used to manufacture the method of manufacturing a semiconductor device as described in item 25 or item 26 of the scope of patent application, characterized by: having: at least the semiconductor device mentioned above The process of forming the aforementioned IC semiconductor chip on a wafer; the process of attaching the semiconductor wafer to a prescribed support; the process of separating the aforementioned IC semiconductors from each other; and the process of separating plural of the aforementioned IC semiconductors on the aforementioned support A process in which a chip and a plurality of the above-mentioned antennas are connected at the same time.

The 28th means for solving the above-mentioned problems is the manufacturing method of the semiconductor device according to the 27th means, which has, among the IC semiconductor chips separated on the support, the linearly aligned plural ICs A process in which a semiconductor chip and a plurality of the above-mentioned antennas are connected at the same time.

The 29th means to solve the above-mentioned problems is the manufacturing method of the semiconductor device as the 27th means. Among the above-mentioned IC semiconductor wafers separated on the above-mentioned support, the plurality of IC semiconductor wafers in the arrangement of the two-dimensional element and A process in which plural of the above-mentioned antennas are connected at the same time.

The 30th means to solve the above problems is to be a semiconductor device, which mainly has: at least in a semiconductor device that implements information transmission in a state where no electrical contact is made with the reader/writer, and an IC semiconductor chip, its characteristics A: A pair of the antennas are provided on the side where the device is formed of the IC semiconductor and the opposite side thereof, and the main surface of the IC semiconductor chip is inclined with respect to the long axis of the antenna.

(The best way to implement the invention)

Figure 1 shows an embodiment of the present invention. The sidewall oxide film 11 of the semiconductor chip is on the side of the silicon 12 of the device layer, and the pad 13 is on the surface of the semiconductor chip provided with the back oxide film 14 and the sidewall oxide film 15 of the semiconductor chip and is connected to the antenna wiring 17 by the adhesive resin 16. The antenna wiring is formed on the surface 18 of the circuit board 18 with materials such as silver paste. The conductive particles 19 are located between the direct pad and the antenna wiring. Although they contribute to the conduction in the longitudinal direction, the conductive particles 19a are located near the side of the semiconductor chip and do not contribute to the conduction between the direct pad and the antenna wiring. However, if it is made without using an anisotropic conductive adhesive, the effect will be more significant when using a normal conductive adhesive. Because the conductive adhesive contacts the periphery of the semiconductor chip, it will not cause electrical short circuits.

Figure 2 (a) and (f) show other embodiments of the present invention. Fig. 2(a) shows a cross section of the process immediately after the semiconductor wafer is completed in the form of a wafer. The sidewall oxide film previously shown in FIG. 1 is oxidized in a wafer state at the location to be separated into the semiconductor wafer, and the location is connected to the main surface by the oxide film of the oxide film layer 23. The pad 21 is formed on the device silicon 22, and the oxide film layer 23 is formed in a sandwich structure sandwiched by the silicon circuit board 24 and the device layer silicon. This structure is a silicon oninsulation.

Figure 2(b) is a cross-sectional view of the process after the support tape is attached to the main surface of the wafer. The numeral 30 in Figure 2(b) refers to the adhesive layer, and the numeral 30 below refers to the adhesive layer.

Figure 2(c) shows a cross-sectional view of the silicon circuit board 24 after the process of etching and removing the silicon circuit board 24 with potassium hydroxide, hydrazidine, ammonia, etc.

Figure 2(d) shows a cross-sectional view of the photoelectric resist 26 coated on the back of the wafer and exposed and developed. It means that the development and printing of the pattern of the part to be separated on the semiconductor chip has been completed.

Fig. 2(e) is a cross-sectional view showing the process after the etching groove 27 is formed. The etching system uses hydrofluoric acid or its mixture or dry etching to etch the oxide film.

Fig. 2(f) shows a cross-sectional view of the expansion of the semiconductor wafer with the expanded support tape 28. The above-mentioned method can easily and economically produce thin and small semiconductors without peripheral cracks. The plane size of this semiconductor chip is longer than 0.5mm. The semiconductor chip is separated by etching as in the embodiment to prepare the antenna state and insert it into a paper or sheet-like medium, so as to make it possible to send out multiple digits. Yuan information is its characteristic.

Figure 3 shows another embodiment of the present invention. The pad 31 is formed on the active device such as the memory pad 32, the read circuit 33, the selector circuit 36 or the power supply circuit 38, etc. It can be formed in such a configuration, and it has a large area for reliable and stable connection with the antenna wiring. The pad also. On the periphery of the semiconductor wafer, there is an oxide film 35 on the sidewall of the semiconductor wafer for preventing short circuit with the conductive adhesive. The pad 31 is connected to the circuit through a through hole 37. The semiconductor wafer is equipped with a small pad 39 for random sampling. With this part, the semiconductor chip and antenna can obtain the value of the analog value change by the contact resistance between the weft and the conductive particle or the deviation of the ferroelectric capacity, so the analog value is implemented by the random sampling circuit 39a Numerical transformation makes it informational. This value can be used as inherent information that is not repeated, such as a person's fingerprint. And this semiconductor chip contributes to preventing the counterfeiting of the media. This inherent information will disappear when the semiconductor chip and the antenna wiring are separated, so it is resistant to tampering, that is, it has a strong feature of anti-counterfeiting. As mentioned, there are one or more semiconductor devices on the device on the main surface of the semiconductor, which are inserted into a paper or sheet-like medium with an antenna attached, and are characterized by sending out multiple bits of information. , And the planar size of the semiconductor chip is 0.5 mm or less on the long side, and there are a plurality of small pads smaller than the pads used to randomly sample and connect to the antenna on the semiconductor device. The semiconductor device is to prevent counterfeiting. Become very effective also. Furthermore, the memory pad 32 is implemented by directly drawing a random number on the chip with a fine area and printing a pattern on each semiconductor chip by direct drawing with an electronic wire.

Figure 5 (a) and (c) show other embodiments of the present invention.

FIG. 5(a) shows a surface view of the state where the semiconductor chip 51 is present in the sheet-like medium connected to the antenna 52. FIG.

Fig. 5(b) shows the section 1 of Fig. 5(a), and electrodes 2, 56 are drawn from the front and back surfaces of the semiconductor wafer, and the capacitance is formed by these electrodes. Therefore, there is no need to set the capacity on the semiconductor wafer side, and the semiconductor wafer can be formed into a small semiconductor wafer to achieve economical and advantageous production rate of the semiconductor wafer.

Figure 5(c) shows that a plurality of electrodes are taken out from the surface of the semiconductor wafer, and the antenna electrodes 3, 57 for forming the capacitance and the antenna electrodes 4, 58 for forming the capacitance are taken to form the capacitance with these electrodes. These are all made into a semiconductor device characterized by a semiconductor chip with a planar size of 0.5mm or less on the long side, inserted into a paper or sheet-like medium with a built-in capacitor antenna, and sending out multiple bits of information. It can be used as an economical and effective device with identification function to prevent forgery.

Fig. 6 shows another embodiment of the present invention. Next, the resin 61 is provided with a backside oxide film 62, and in a semiconductor wafer with a sidewall oxide film 66 on the side of the device silicon layer 63, an anisotropic conductive adhesive with conductive particles 65 dispersed on the surface oxide film 66 The tungsten pad 68 uses conductive particles 67 to electrically connect the antenna wiring 69. Since the pad is formed of tungsten or non-oxidized metal, and the sidewall oxide film is used, a combination of a thin semiconductor chip and an antenna can be formed without short-circuiting. As mentioned above, the plane size of the formed semiconductor chip is 0.5mm or less on the long side. The pad of the semiconductor chip is formed of tungsten and inserted into a paper or sheet-like medium with an antenna to send out multiple bits. The information is a feature of various certificate equipment media that prevents forgery.

Fig. 8 shows another embodiment of the present invention. The printing pattern 81 on the surface of the medium is on the surface of the sheet-like medium 83, in which there is a semiconductor chip 82 containing an antenna. If it is not only the information in the read-only memory of the semiconductor chip but is simulated directly as it is, it will become non-resistive to preventing forgery. Therefore, when the information is coded and printed as a value or pattern, it can be implemented more strictly. Confirmation (identification) of whether it is forged or not. Since the semiconductor chip is only a read-only memory, it is possible to fabricate a semiconductor chip with a small size.

In other words, the plane size of the semiconductor chip is 0.5mm or less on the long side, and it is inserted into a paper or sheet-like medium with an antenna to send out multiple bits of information, and the information is numbered and printed on the medium The semiconductor devices featured above can be formed into various credential equipment media with strong anti-counterfeiting properties. The encoded printed information can be carried out by using a combination of special inks and magnetic materials.

Figures 9A and 9B show other embodiments of the present invention.

FIG. 9A shows a plan view of the semiconductor wafer 91. The conductive particles 92 are dispersed on the top of the small pad 93 to be present. Moreover, there is a memory area 98 that can be written into the semiconductor chip. FIG. 9B is a cross-sectional view of the antenna wiring 95 that connects the semiconductor chip 91 to the circuit board 96 through the resin 94. Since the difference in the contact resistance of the conductive particles between the semiconductor chip and the antenna wiring or the capacitance of the ferroelectric can be obtained by the small pad part of the semiconductor chip, the value of the analog value can be changed, so a random sampling circuit is used. Implement analogy and numerical transformation to implement informationization. This value can be used for non-repeated inherent information such as human fingerprints or ink patterns, so it can contribute to the prevention of counterfeiting of the medium using the semiconductor chip. Moreover, since this inherent information disappears immediately when the semiconductor chip and the antenna wiring are separated and it is difficult to reproduce, it is resistant to damage, in other words, has a strong anti-counterfeiting feature.

Fig. 10 shows another embodiment of the present invention. This figure is an embodiment of the forgery-preventing communication protocol (Protocol) used in the semiconductor chip of the present invention and the random sampling circuit in the chip. Oita can be divided into open type and closed type. First, the embodiment of the open communication protocol will be explained. In the open type, at first, the random number N generated by the semiconductor chip in the card is inquired from the Inguirier, such as a write reader. After the card answers N, it closes the N readout circuit by itself or by the interrogator's instructions, so that it cannot be read. After receiving N, the interrogator logs in to the database, and then when it is used, the interrogator first asks for the ID of the card. After returning the card ID to the interrogator, the interrogator then sends the random number to the card. The card uses N as the key and changes the random number to the code and returns to the interrogator. The interrogator compares the data obtained from the database If N and the value interpreted this time are the same, it is deemed to be a legitimate card. The card in this embodiment is the formation medium of the present invention, namely various token media, and can be replaced and used without special restrictions on securities. .

Regarding the closed type. That is, in the memory area that can be written in the semiconductor chip, at the beginning, write the coded N to the memory area of the card from the query. After that, the N readout circuit on the card side is closed. Next, a second random number is assigned to the semiconductor chip with a random number N. After the random number N is encoded and read, the content of the memory area is read out, and the interrogator returns to the second random number. 2 Random numbers are used to form a card and system characterized by a card that can confirm that the semiconductor chip is not a counterfeit. A person who confirms that the card is a legitimate card by the above-mentioned and safe verification of N.

Fig. 11A and Fig. 11B show another embodiment of the present invention.

Figure 11A shows the electromagnetic wave waveform sent from the interrogator of the present invention to the paper or sheet-like medium containing the semiconductor chip. Although the frequency of the transport wave is arbitrary, the transport wave is amplitude-modulated and assigned the n-th sequence pulse 111, which means that the information of the n-th sequence address in the read-only memory can be sent from the semiconductor chip, so the second half of the sequence pulse period This is the period during which the n-th serial number information 112 is sent, and the same will continue the n+1-th serial number timing pulse 113 or the n+1-th serial number information 114 period. These repeated implementations read the content of the read-only memory in the semiconductor chip into the interrogator. In other words, in this example, the carrier wave is periodically amplitude modulated in complex frequency units, and applied to a semiconductor chip equipped with an antenna. The leading edge of each cycle is used as a timing pulse, and the antenna load in the semiconductor chip is changed during this cycle to send the A semiconductor device characterized by 1 bit of information in a semiconductor chip.

FIG. 11B is a block diagram of the circuit in the semiconductor chip 118. FIG. The antenna 115 is connected to the rectifier 116 to supply voltage to the semiconductor chip, enters the counter 119 at the same time, and sends out information one bit at a time together with the output selector 119a of the read-only memory 117. These structures constitute a small semiconductor chip. In other words, in this embodiment, the carrier wave is periodically amplitude modulated in units of multiple cycles to a semiconductor chip equipped with an antenna, and the semiconductor chip is equipped with a counter. The leading edge of each cycle is used as a timing pulse. Input In the counter, the output of the counter is used to select the output of the memory, and the left line load in the semiconductor chip is changed during the period to send out the semiconductor device with 1 bit of information in the semiconductor device as its characteristic.

Fig. 12 shows an embodiment of the present invention. In the sheet-like medium 124, the first semiconductor chip 121 and the second semiconductor 123 are connected to both ends of the antenna 122. Generally, a plurality of semiconductor chips share one antenna, and each semiconductor chip is a semiconductor device characterized by acting according to the load state of the antenna. After being constructed in this way, a plurality of semiconductor chips can be simply mounted without complicated converging circuits in the semiconductor chip, as another semiconductor chip may be used as an aid in the event of damage, thereby improving the reliability of the medium. Furthermore, each of the plural semiconductor chips is provided with inherent information, so that the mutual relationship can be connected, and if the plural conditions are fulfilled, a pre-formed method of transmitting information can be used to construct a highly secure system.

Fig. 13 shows another embodiment of the present invention.

The semiconductor chip 131 is enclosed in a sheet-like medium 133 provided with an entry column 132 of encoded physical information on the surface. In order to prevent forgery, it is difficult to physically collect the same object and produce it with high precision, and the high degree of authentication technology is a necessary condition. The semiconductor itself is a so-called imitation of a semiconductor chip that is difficult to achieve unless it is manufactured with manufacturing technology accompanied by advanced processing technology. Semiconductor processing technology is represented by the level of precision of fine patterns. Therefore, although the same function can be achieved, if the processing technology is higher, the size of the semiconductor chip becomes smaller, and the technology level becomes higher and higher with the change of time, and the physical shape of the same function becomes smaller, and the function of the same physical shape becomes Higher. The present invention encodes all or part of the physical information of the size, thickness, position, and degree of the semiconductor chip with the semiconductor chip inserted into the paper or sheet-like medium in the state of being equipped with an antenna to send out multiple bits of information Printing is a characteristic semiconductor device, so it is easy to identify whether the semiconductor chip and its mounting method are counterfeit, and it is easy to distinguish it.

Figure 14 shows another embodiment of the present invention. A first cover sheet roll 141 and a second cover sheet roll 144 are provided, and the semiconductor wafer 142 is inserted between the first cover sheet 145 and the second cover sheet 143, and the winding roller 146 winds up the semiconductor wafer Of the media. The cover sheet is not particularly limited to materials such as paper, synthetic paper, plastic, cloth, and fiber cloth. The semiconductor wafer is automatically picked up and then positioned. This semiconductor chip may have an antenna attached in advance, or may have printing or wires on the first or second sheet, and may be bonded with a conductive adhesive at the time of insertion. There are other adhesives on the intermediate bonding sheet for inserting the semiconductor wafer, such as uradan-based, cyano-based, or UV-curing-based adhesives, which can be formed to ensure the flatness and rigidity of the medium under low temperature conditions.

Figures 15A and 15B show other embodiments of the present invention. FIG. 15A shows one of the forms in which a plurality of semiconductor chips 151 are dispersedly arranged in a sheet-like medium 152. As shown in FIG. FIG. 15B shows an example of a small antenna 154 mounted on the semiconductor chip 151 of FIG. 15A. The shape and characteristics of the antenna are different by the wireless frequency or energy used. One example of the antenna formation method is to use semiconductor wiring processing technology to make fine wiring into a coil shape. With the use of multilayer wiring or copper wiring technology, long wires with miniaturization, low resistance, and long wiring can be obtained. When the antenna is formed with a semiconductor chip, on the one hand, the reliability of the antenna connection can be increased and the manufacturing process can be reduced, and the semiconductor chip can be manufactured economically. When a plurality of semiconductor chips are dispersedly arranged on the medium, non-repeatability can be ensured, and it can also be used as a compensation method for semiconductor failures, which can achieve counterfeit prevention and improved reliability. Place an antenna smaller than a semiconductor chip on the semiconductor chip, and insert a plurality of the semiconductor chips into a paper or sheet-like medium to form a semiconductor device characterized by sending out multiple bits of information without interference. Various credential device media that can prevent forgery can be easily realized.

Figure 16 shows another embodiment. The first antenna pad 161 and the second antenna pad 162 exist on the active device of the semiconductor chip and are connected to both ends of the antenna coil 163. Although the antenna is set as a coil-shaped antenna in the figure, it may also be a dipole type (die pole type) each antenna terminal of the antenna. The first antenna pad is connected to the transmitting and receiving circuit of the semiconductor chip through the first through hole 164, and the second antenna pad is connected to the transmitting and receiving circuit of the semiconductor chip through the second through hole 165, as described above, on the active device Set up multiple pads and connect them with the antenna or external capacity as necessary. The connection between the pad and the antenna terminal is carried out by pressing method or adhesive. For example, when an anisotropic conductive adhesive is used, one-time bonding, heating and pressure treatment can efficiently implement multiple pads and circuit boards. Connection of wiring patterns.

Figure 17 shows another embodiment of the present invention. It is a plan view showing an embodiment in which an inclined chamfer 171 is provided at the corner of a semiconductor wafer. In order to increase the mechanical strength against concentrated load and bending, eliminate the cutting width of the cutter, and effectively increase the area of the semiconductor chip, the semiconductor chip is separated by etching technology. At this time, the separation groove is placed in the corner of the semiconductor chip. The pattern is designed to be inclined or arc to optimize the relaxation of concentrated stress on the corner shape of the finished semiconductor chip. The characteristics of the semiconductor chip; the planar size is 0.5mm or less on the long side, and the semiconductor chip is inserted into a paper or sheet-like medium with an antenna attached to send out multiple bits of information, and the corners of the semiconductor chip are , A chamfer of 1/100 of the length of the long side is a characteristic semiconductor device form, which can prevent forgery and form a variety of credential equipment media with high reliability.

Fig. 18 shows another embodiment of the present invention. The concentrated load tool 181 is crimped on the sheet-shaped medium 182, and the semiconductor chip 183 is located at or near the middle elevation of the medium. The sheet-like media is placed on the silicon rubber 184 on the steel plate 185. The silicone rubber system simulates the surrounding environment of the sheet-like media in the actual living space. The diameter of the concentrated load tool is more than 1mm. This is an environment where a concentrated load is applied to a real living space. The sheet-like medium shown in Fig. 18 is deformed by the degree of the concentrated load and becomes the cross-sectional state shown in Fig. 18. Figure 19 is a diagram showing the relationship between the resistance to concentrated load and the size of a semiconductor wafer with a thickness of 50 microns in this state. In the actual living space, the degree of human crimping of the ball pen is 700gr, and when the concentrated load can withstand 1kg as the test standard, the inventor found in Figure 19 that it is feasible to achieve a semiconductor chip size of 0.5mm or less for the concentrated load. When the area is 0.5mm or more, the area where the concentrated load is weak. Based on the above facts, the present invention is: the planar size of the semiconductor chip is 0.5mm or less on the long side, and the semiconductor chip is inserted into the paper or sheet-like medium with the antenna attached, and the information of the plural bits is sent out. The characteristic semiconductor device, and the semiconductor chip is made to be less than 50 microns, and the medium of the semiconductor device used to prevent the forgery of various credential equipment is a necessary element of the technical restriction, which constitutes the structure of the present invention Part of it.

Fig. 20A and Fig. 20B show other embodiments of the present invention.

Inside the braille protrusion 201 on the sheet-like medium 204, a semiconductor chip 202 equipped with an antenna 203 is provided. Braille protrusions are added to various credential equipment media. If the size of the semiconductor chip is less than 0.5mm, the protrusions can be accommodated. In this way, the structural strength of the mounting part of the semiconductor chip can be improved. In other words, the semiconductor device is characterized by inserting the semiconductor chip into a paper or sheet medium with an antenna attached and sending out multiple bits of information, and the semiconductor chip is a semiconductor device characterized by the presence of the convex portion for braille. It is possible to form a device medium that prevents forgery of various credential devices with improved reliability.

FIG. 21 shows another embodiment of the present invention. A first semiconductor chip 211 connected to the first antenna 212 and a semiconductor chip 213 connected to the second antenna 214 are stored in a sheet-like medium 217. At this time, a first code recording area 215 and a second code recording area 216 are provided on the surface of the sheet-like medium. The information sent from the first semiconductor chip is printed on the first code recording area using numerical values or special patterns, and the information sent from the second semiconductor chip is also printed on the second code recording area using numerical values or special patterns. In this way, even if one of the semiconductor wafers is damaged, it can still be verified for forgery or not. By making the long side of the plane size of the plural semiconductor chips 0.5mm or less, the semiconductor chip is inserted into a paper or sheet-like medium with an antenna, and is characterized by sending out plural bits of information. In addition, the information of each semiconductor chip is coded and printed on the medium to form various marking media for preventing counterfeiting, which is a characteristic of semiconductor devices, thereby providing a method to improve reliability.

Figure 22 shows another embodiment of the present invention. Between the first cover sheet 221 and the second cover sheet 224, there is provided a semiconductor chip 223 having a structure for connecting the antenna 226 to the antenna pad 225, and the semiconductor chip is reinforced by a reinforcing metal 222. Reinforcing metals use materials with a large coefficient of elasticity to improve the resistance to concentrated loads. The thickness of the reinforcing metal is as thick as possible. However, the thickness of the sheet-like medium is limited, so the thickness of the reinforcing metal is also limited. Therefore, the thickness of the reinforcing metal should be greater than the thickness of the semiconductor chip, so that the improvement effect can be obtained. The adhesive force between the reinforcing metal and the semiconductor chip should be strong. This is necessary to relieve the tensile stress of thin semiconductor wafers. In the present invention, the planar size of the semiconductor chip is 0.5 mm or less on the long side. The semiconductor chip is inserted into a paper or sheet-like medium with an antenna, and is characterized by sending out multiple bits of information, and It is possible to provide a method with excellent reliability by attaching a reinforcing metal thicker than the thickness of the semiconductor chip to the semiconductor chip to prevent forgery of the characteristic semiconductor device.

Figure 23 shows another embodiment of the present invention. Washi fibers 231 are stored on the filter screen 235 of Washi paper, and are stored in a filter frame 234 in a regular shape, and the semiconductor chip 232 equipped with the antenna 233 is filtered together with the washi fiber. If the semiconductor wafer is 0.5mm or less, it can be inserted into the washi as a part of the fiber shape. In this figure, a semiconductor wafer is represented as a representative, but a semiconductor wafer mixed with plural numbers also belongs to the present invention. The scope is also. In other words, in the present invention, the planar size of the semiconductor chip is less than 0.5mm in length, and the semiconductor chip is inserted into a washi medium with an antenna, and is characterized by sending out multiple bits of information, and The semiconductor chip is processed as a part of the washi fiber when the washi is filtered, and the semiconductor device that is mounted in the washi or the surface of the washi is a feature of the semiconductor device to prevent the forgery of various certificate equipment and media, so that it can be easily provided The process is also the means of realization.

Figures 24 (a) to (g) show other embodiments of the present invention.

Fig. 24(a) shows a cross-sectional view of the device in which an insulator-extended silicon wafer with an oxide film layer 242 is completed between the device layer 241 and the circuit board silicon wafer 243.

Figure 24(b) shows a cross-sectional view immediately after the process of attaching the first support sheet 224 to the main surface side of the wafer.

Figure 24(c) shows a cross-sectional view after the process of removing silicon circuit boards by etching only silicon (for example, potassium hydroxide). The oxide film layer 242 is used as a stopper for the etching of the chemical solution. The job is to obtain extremely thin semiconductors, such as 0.1 to 50 microns, which is very effective.

FIG. 24(d) is a cross-sectional view immediately after the process of combining the reinforcing metal 246 provided with the second supporting sheet 246. FIG.

Figure 24(e) shows a cross-sectional view immediately after the process of removing the first support sheet.

Fig. 24(f) is a cross-sectional view of the process of applying photoresist 247 to expose and develop the image. The mask is used to separate the linear pattern of the semiconductor chip.

Fig. 24(g) shows a cross-sectional view of etching reinforcement metal, oxide film layer, and device layer silicon by etching technology to form separation trenches. Through these processes, high efficiency, high reliability, and stable production of thin and small semiconductor chips with reinforcing metal can also be produced.

Figure 25 shows another embodiment of the present invention. The fold lines 251 of integer multiples exist along the long and short sides of the plan view of the sheet-like medium. Here, when the semiconductor chip 252 of the antenna 253 is mounted, one can be provided. The planar size of the semiconductor chip is 0.5 mm or less on the long side, and the semiconductor chip is inserted into the paper or sheet-like medium with the antenna in the state. It is a feature of sending multiple bits of information, and the semiconductor chip is not arranged on the medium of an integer multiple of the fold line position of the medium as a feature of the semiconductor device to prevent forgery. There is no semiconductor chip at the position of integer multiples when bending, which can reduce the probability of damage caused by bending. A structure with good reliability.

Using FIGS. 26A and 26B, another embodiment of the present invention will be described.

This embodiment applies the present invention to a proximity type non-contact IC card based on ISO/IEC14443.

Fig. 26A is a view from the side where the IC semiconductor chip is not formed from the equipment side, the card-shaped wiring circuit board 9003 with the antenna coil 9002 formed on the card-shaped wiring circuit board 9003 has a memory and a communication control function embedded in it. Diagram of the state.

Figure 26B is a cross-sectional view of the semiconductor chip portion of the completed card at line AB of Figure 26A.

In this embodiment, on the wiring circuit board 9003 on which the coil 9002 is formed, the electrode bump electrode 9004 faces the top of the coil and the IC semiconductor chip 9001 is mounted on the wiring circuit board 9003. The wiring circuit board 9003 is made of PET (polyterephthalene). Glycol formate) made. The coil 9002 is formed by screen printing of conductive paste.

An anisotropic conductive adhesive 9005 (anisotropic conductive adhesive) was used for the connection between the electrode bump 9004 and the coil 9002. The anisotropic conductive adhesive is formed by dispersing conductive fine particles in the adhesive layer. The facing part of the electrode bump contact 9004 and the coil 9002 is connected via the conductive particles sandwiched between them. However, because the conductive particles are dispersed, there is no facing electrode bump contact or coil wiring. It will not cause electrical short-circuit.

In this example, the size of the IC semiconductor wafer 9001 is 0.3mm and the thickness is 30μm. The back surface of the silicon wafer forming the equipment is polished by a combination of mechanical polishing and chemical polishing to make it thinner, and then diced. And obtained a thin IC semiconductor wafer. On the side of the IC semiconductor chip 9001 without forming equipment, a card surface layer 9006 made of PET is provided. The card is formed by the laminated structure formed by sandwiching the IC semiconductor chip 9001 and the resin layer 9007 with two layers of PET.

In this implementation, due to the small area and thin thickness of the semiconductor chip, and the connection to the printed coil by an anisotropic conductive adhesive, it is highly resistant to bending and point pressure, and can be thinned and low-cost. The contactless IC card is also.

Figures 27A and 27B show other embodiments of the semiconductor device according to the present invention. Figure 27A is a plan view, and Figure 27B is a cross-sectional view of a part of the semiconductor chip.

In this embodiment, on the side and back of the IC semiconductor chip 9011 where the device is formed, an Au bump contact 9013 formed by vaporization is provided. The protruding contact portion 9013 is connected to the slender antenna 9012 made of Cu that is electroplated with Sn.

The IC semiconductor chip 9011 does not protrude from both sides of the antenna at its ends, and the main surface is connected to the main surface of the IC semiconductor chip 9012 in an oblique shape.

The periphery of the IC semiconductor chip 9011 is filled with resin 9014, and the IC semiconductor chip is embedded between the pair of antennas, and the entire shape is flat and elongated.

The size of the IC semiconductor chip 9011 used in this embodiment is about 50 μm in thickness with a thickness of 0.25 mm including Au bumps. The thickness of the antenna 9012 is 0.15mm, and the angle between the main surface of the IC semiconductor chip 9011 and the antenna 9012 is set to be about 30 degrees, so that it can be a structure that does not protrude from the antenna surface of the IC semiconductor chip. The width of the antenna 9012 is fixed. It is larger than the width of the semiconductor wafer 9011.

In this embodiment, the entire IC semiconductor chip is buried in the thickness of the dipole antenna, thereby obtaining a semiconductor device with very good flatness. In addition, due to the small size of IC semiconductors, it is possible to make the whole body thin even when using a tilted structure.

Furthermore, the semiconductor device of this embodiment may be used alone. However, it is also possible to embed the thin strip-shaped semiconductor device shown in Fig. 27 in another substrate, and make it into, for example, a normal credit card.

FIG. 28A to FIG. 28E show other embodiments of the semiconductor device according to the present invention and its manufacturing method. In this embodiment, as shown in the plan view of Fig. 28A and the cross-sectional view of Fig. 28B, the surface of the IC semiconductor chip 9021 on the side where the device is formed is formed with two raised contacts 9023, each with an anisotropic adhesive 9024 Come to connect to 9022. The width of the thin strip 9022 made of Cu is formed to be narrower than the width of the IC semiconductor chip 9021.

When manufacturing the semiconductor device according to the present embodiment, the antenna member is connected to the lead frame of the antenna frame 9025 in a state where a plurality of antennas 9022 are arranged side by side as shown in FIG. 28C. In this example, the pitch of the adjacent antennas is equal to the pitch of the IC semiconductor chip 9021 formed on the Si wafer, and the distance between the facing antennas is the same as that of the pair of antennas to be connected to the IC semiconductor chip. The intervals are equal.

FIG. 28D shows a state where the antenna member in the form of a lead frame and the LSI wafer 9026 are superimposed for connecting the antenna 9022 and the IC semiconductor chip 9021. The LSI wafer 9026 is separated into individual semiconductor wafers by dicing in a state where a supporting sheet is attached to a predetermined sheet frame 9028. In this state, the antenna component is placed on a predetermined row of IC semiconductor chips on the support sheet, and the tip of each antenna is positioned on the raised contact portion of the IC semiconductor chip.

Fig. 28E shows the cross-sectional structure of the 28D line AB in the state where the antenna 9022 and the IC semiconductor chip 9021 are connected. Among the IC semiconductor chips 9021 on the supporting sheet 9027, the IC semiconductor chip on the left end of the figure is aligned with the tip of the antenna 9022 supported by the antenna frame 9025, and by the heating/pressurizing device 9029, The anisotropic conductive adhesive 9024 is used to bond the bump contact 9023 and the antenna 9022 on the IC semiconductor chip. After heating/pressing for a predetermined time is completed, the IC semiconductor chip 9021 and the support sheet 9027 are peeled off by heat, and the IC semiconductor chip is separated by the support sheet and becomes a state connected to the antenna.

In this embodiment, the heating and pressing device has a long structure in the direction perpendicular to the paper surface of the figure. During the above-mentioned connection process, all the effective semiconductor chips in a row on the supporting sheet are connected to the antenna at the same time. Then cut the antenna 9022 from the antenna frame 9025 and cut off the CD and C'-D' in the figure to complete the IC semiconductor chip connected with the dipole antenna. Furthermore, the semiconductor chip on the left side of the connected semiconductor chip in Figure 28E has been connected to the antenna and separated. Continuing with this process, from the left side of the figure, connect the antennas of the IC semiconductor chip with the second number and the plurality of IC semiconductor chips in the row.

As described above, in this embodiment, because the width of the antenna 9022 is narrower than the width of the IC semiconductor chip 9021, it is possible to simultaneously connect a plurality of IC semiconductor chips formed on the Si wafer to the antenna, thereby achieving manufacturing The high production volume of the process, and the advantage of low cost.

In addition, the structure shown in Fig. 28A and Fig. 28B of this embodiment can also be used by embedding it in a resin or other base material.

Fig. 29A to Fig. 29D are diagrams showing other embodiments and manufacturing methods of the present invention.

In this embodiment, as shown in FIG. 29A, bump contacts 9033 are formed on the side surface of the IC semiconductor chip 9031 where the device is formed and the back surface where the device is not formed, respectively, and each is connected to the antenna 9032 by solder 9034. The Cu-coated iron-made thin wire antenna 9032 has a thicker diameter at the connection part of the IC semiconductor chip 9021, but its cross-sectional area is small even if it is smaller than the IC semiconductor chip 9021 area.

According to the manufacturing of the semiconductor device of the present embodiment, as shown in FIG. 29C, the antenna member is inserted into the hole provided in the antenna support 9038 in a state where a plurality of antennas 9032 are arranged in a two-dimensional shape. In this example, the arrangement of the antenna is equal to the arrangement of the IC semiconductor chip 9031 formed on the Si wafer.

Figure 29B shows the LSI wafer 9035 on which the IC semiconductor chip 9021 is formed. The LSI wafer 9035 is then placed on the support sheet 9036 of the predetermined sheet frame 9037 and separated by dicing into individual IC semiconductor chips. .

Fig. 29D shows a cross-sectional view of the state where the LSI wafer of Fig. 29B and the antenna of Fig. 29C are arranged facing each other. Although the antenna 9032 penetrates through the hole provided in the antenna support 9038, the larger diameter of the part connected to the IC semiconductor chip is larger than the hole, so the antenna will not fall from the support. In this state, each antenna member can face the IC semiconductor chip 9031 attached to the support sheet 9036 to perform position alignment (positioning).

Next, using a heating/pressurizing device not shown, solder 9034 is used to connect the bump contact 9033 on the IC semiconductor chip and the antenna 9032. After heating/pressurizing for a predetermined period of time, the pressing is finished, and the IC semiconductor chip is separated by the supporting sheet and connected to the antenna. In the above connection process, all one side of the effective semiconductor chip on the support sheet is connected to the antenna at the same time, and then the antenna arranged in the two-dimensional shape is also connected to the other side of the IC semiconductor chip at the same time. During this process, the antenna needs to be positioned in the reverse direction shown in Figure 29D, so the magnet with the support body is used to prevent the antenna from falling.

As described above, in this embodiment, since the cross-sectional area of the antenna 9032 is smaller than that of the IC semiconductor chip 9031, it is possible to connect a plurality of planar IC semiconductor chips formed on the Si wafer to the antenna at the same time. The advantages of high production volume and low cost in the manufacturing process. Furthermore, the structure shown in Fig. 29A of this embodiment can also be incorporated into resin or other substrates for use.

If the countermeasures are to be considered for the forgery of various credential devices, media, etc., the inventor believes that the ease of the method to forge it also has technical added value. In the previous example, it was proposed to seal metal patterns in various credential equipment media. However, this method is not only easy to make patterns, but also has the danger of rewarding counterfeiting methods. According to the technology of preventing forgery, on the one hand, it has the use of improving safety and reliability, so it becomes completely defenseless against high-level forgery. Therefore, if a simple anti-counterfeiting technology can increase the effect of counterfeiting, it is a question worth pondering.

As far as the technical level of the metal pattern production of the prior art is concerned, since the key to the detection technology lies in the presence or absence of metal, it is self-evident that there is no need for high-level technology for precise investigations after opening the package. In other words, due to the presence or absence of metal patterns It is a necessary condition, so it is possible to choose the realization method at the usual technical level.

In order to prevent the forgery of the media of various credential devices, the present invention uses semiconductor chips, combined with encoding technology, and is equipped with random sampling methods. It also appears to be economical and practical to solve the above problems. The effect.

In addition, regarding paper, the mechanical strength and the strength of the semiconductor chip need to be further reviewed. If the previous example is to be fabricated with a thickness of less than 100 microns, it is that there is no mechanical stress and The point of view of no determines the problem. In other words, for thin paper-like media to mount semiconductor chips, it is necessary to clearly propose different restrictions. This is necessary to express the meaning after careful consideration, but it is still conscious in the previous example. There are deficiencies, and it is necessary to review (consider) the thickness and size of the semiconductor chip. For example, when a 1mm semiconductor chip is mounted on a paper with a thickness of 100 microns, whether it can withstand use is not whether it is possible to make it in structure, but whether it can withstand use is more important. According to the present invention, it is possible to solve these problems. The effect of the problem.

The periphery of the semiconductor chip is cut with a diamond blade. With this normal semiconductor chip, when external stress is applied to the semiconductor chip, when the stress is concentrated on the periphery of the semiconductor chip, cracks such as cracks will occur, and the loss will be lost. The function of part or all of a semiconductor chip. When a semiconductor chip is sealed in a thin medium such as paper, bending force or concentrated stress is easily applied. Therefore, if there is a small gap in the semiconductor chip, it can also cause the problem of damage to the semiconductor chip. The structure of the prior art is completely based on this technology. Did not take into account. According to the present invention, this problem can be solved.

The prior art lacks consideration of the side effects of having gold bumps and the anisotropic conductive contact agent or conductive adhesive provided on the periphery of the semiconductor chip. In other words, the size of the vertical structure is due to the existence of gold bumps. The increase, or the consideration of the short circuit around the semiconductor chip. Therefore, the structure of the semiconductor chip including the gold bump contacts has the problem of hindering obtaining a structure with strong bending force. According to the present invention, the effects of solving these problems can be obtained.

(Possibility of industrial use)

The present invention is used in sheet-like media, such as various voucher devices, securities, various gold coupons, important books, IC cards, prepaid cards, etc., which are very useful in preventing forgery. It is also possible to realize a battery-free and non-contact recognition method using semiconductor chips.

<p>11 Sidewall oxide film of semiconductor wafer</p><p>12 Device layer silicon</p><p>13 pad</p><p>14 Backside oxide film</p><p>15 Sidewall oxide film of semiconductor wafer</p><p>16 Then resin</p><p>17 Antenna wiring</p><p>18 Circuit board</p><p>19 Conductive particles</p><p>19a Conductive particles</p><p>twenty one pad</p><p>twenty two Device layer silicon</p><p>twenty three Oxide film layer</p><p>twenty four Silicon circuit board</p><p>25 Support tape</p><p>26 Photoresist</p><p>27 Etch groove</p><p>28 Expanded support tape</p><p>29 gap</p><p>30 Subsequent layer</p><p>31 pad</p><p>32 Memory pad</p><p>33 Readout circuit</p><p>34 Select circuit</p><p>35 Sidewall oxide film of semiconductor wafer</p><p>36 Send and receive circuit</p><p>37 Through hole</p><p>38 Power circuit</p><p>39 Small pad for random sampling</p><p>39a Random sampling circuit</p><p>41 Missing</p><p>42 Cracked</p><p>43 pad</p><p>44 Semiconductor wafer</p><p>45 Then resin</p><p>46 Conductive particles</p><p>47 Antenna wiring</p><p>48 Conductive particles</p><p>49 Circuit board</p><p>51 Semiconductor wafer</p><p>52 antenna</p><p>53 Flake media</p><p>55 Antenna electrode forming capacity (1)</p><p>56 Antenna electrode forming capacity (2)</p><p>57 Antenna electrode forming capacity (3)</p><p>58 Antenna electrode forming capacity (4)</p><p>61 Then resin</p><p>62 Backside oxide film</p><p>63 Device silicon layer</p><p>64 Sidewall oxide film</p><p>65 Conductive particles</p><p>66 Surface oxide film</p><p>67 Conductive particles</p><p>68 Tungsten pad</p><p>69 Antenna wiring</p><p>71 Then resin</p><p>72 Device silicon layer</p><p>73 Aluminum pad</p><p>74 Surface oxide film</p><p>75 Conductive particles</p><p>76 Golden pad</p><p>77 Conductive particles</p><p>78 Antenna wiring</p><p>79 Insulator</p><p>81 Printed pattern on the surface of the media</p><p>82 Semiconductor wafer</p><p>83 Flake media</p><p>91 Semiconductor wafer</p><p>92 Conductive particles</p><p>93 Small pad</p><p>94 Then resin</p><p>95 Antenna wiring</p><p>96 Circuit board</p><p>97 Possible areas of memory</p><p>111 N-th sequence pulse</p><p>112 Information of the nth serial number</p><p>113 N+1 sequence number timing pulse</p><p>114 Information of the n+1 serial number</p><p>115 antenna</p><p>116 Rectifier</p><p>117 Read-only memory</p><p>118 Semiconductor wafer</p><p>119 counter</p><p>119a selector</p><p>121 First semiconductor wafer</p><p>122 antenna</p><p>123 2nd semiconductor wafer</p><p>124 Flake media</p><p>131 Semiconductor wafer</p><p>132 Encoded physical information entry column</p><p>133 Flake media</p><p>141 The 1st cover algae sheet roll</p><p>142 Semiconductor wafer</p><p>143 2nd cover sheet</p><p>144 2nd cover sheet roll</p><p>145 1st cover sheet</p><p>146 Take-up roll</p><p>151 Semiconductor wafer</p><p>152 Flake media</p><p>154 antenna</p><p>161 Pad for the first antenna</p><p>162 Pad for the second antenna</p><p>163 Antenna coil</p><p>164 1st through hole</p><p>165 2nd through hole</p><p>171 Oblique chamfer</p><p>181 Centralized load tool</p><p>182 Flake media</p><p>183 Semiconductor wafer</p><p>184 Silicone rubber</p><p>185 Steel plate</p><p>201 Braille protrusions</p><p>202 Semiconductor wafer</p><p>203 antenna</p><p>204 Flake media</p><p>211 First semiconductor wafer</p><p>212 1st antenna</p><p>213 2nd semiconductor wafer</p><p>214 2nd antenna</p><p>215 The first coding record field</p><p>216 2nd Coding Recording Field</p><p>217 Flake media</p><p>221 1st cover sheet</p><p>222 Reinforcing metal</p><p>223 Semiconductor wafer</p><p>224 2nd cover sheet</p><p>225 Antenna pad</p><p>226 antenna</p><p>231 Washi fiber</p><p>232 Semiconductor wafer</p><p>233 antenna</p><p>234 Filter frame</p><p>235 Filter net</p><p>241 Device layer silicon</p><p>242 Oxide film layer</p><p>243 Circuit board silicon wafer</p><p>244 1st support piece</p><p>245 Reinforcing metal</p><p>246 2nd support piece</p><p>247 Photoresist</p><p>248 Etch groove</p><p>251 Integer fold line</p><p>252 Semiconductor wafer</p><p>253 antenna</p><p>9001 IC semiconductor chip</p><p>9002 Coil</p><p>9003 Wiring circuit board</p><p>9009 Electrode bump</p><p>9005 Anisotropic conductive adhesive</p><p>9006 Surface layer</p><p>9007 Resin layer</p><p>9011 IC semiconductor chip</p><p>9012 antenna</p><p>9013 Bulge</p><p>9014 Resin</p><p>9021 IC semiconductor chip</p><p>9022 antenna</p><p>9023 Bulge</p><p>9024 Anisotropic conductive adhesive</p><p>9025 Antenna frame</p><p>9026 Wafer</p><p>9027 Support piece</p><p>9028 Sheet frame</p><p>9029 Heating/pressurizing device</p><p>9031 IC semiconductor chip</p><p>9032 antenna</p><p>9033 Bulge</p><p>9034 Solder</p><p>9035 Wafer</p><p>9036 Support piece</p><p>9037 Sheet frame</p><p>9038 Antenna support</p>

Fig. 1 is a diagram showing an embodiment of the present invention.

Fig. 2 is a diagram showing an embodiment of the present invention.

Fig. 3 is a diagram showing an embodiment of the present invention.

Fig. 4 is a diagram showing an embodiment of the prior art.

Fig. 5 is a diagram showing an embodiment of the present invention.

Fig. 6 is a diagram showing an embodiment of the present invention.

Fig. 7 is a diagram showing an embodiment of the prior art.

Fig. 8 is a diagram showing an embodiment of the present invention.

Fig. 9A is a diagram showing an embodiment of the present invention.

Fig. 9B is a diagram showing an embodiment of the present invention.

Fig. 10 is a diagram showing an embodiment of the present invention.

Fig. 11A shows the waveform of the electromagnetic wave in the embodiment of the present invention.

Fig. 11B shows a circuit block diagram of an embodiment of the present invention.

Fig. 12 shows a diagram of an embodiment of the present invention.

Fig. 13 shows a diagram of an embodiment of the present invention.

Figure 14 is a diagram showing an example of the state of the sheet roll of the present invention.

Fig. 15A shows a state diagram of semiconductor components dispersed in a sheet-like medium.

Fig. 15B shows a state in which the antenna is mounted on the semiconductor device.

Fig. 16 shows a diagram of an embodiment of the present invention.

Figure 17 shows a diagram of an embodiment of the present invention.

Fig. 18 shows an embodiment of the present invention.

Figure 19 shows an example of the root of the present invention.

Fig. 20A shows a cross-sectional view of an embodiment of the present invention.

FIG. 20B is a cross-sectional view corresponding to FIG. 20A.

Fig. 21 shows a diagram of an embodiment of the present invention.

Figure 22 shows a cross-sectional view of an embodiment of the present invention.

Figure 23 shows a plan view of an embodiment of the present invention.

Fig. 24 is a diagram showing an embodiment of the present invention.

Figure 25 shows a plan view of an embodiment of the present invention.

Fig. 26A shows a plan view of an embodiment of the present invention.

Fig. 26B is a cross-sectional view of the embodiment of Fig. 26A.

Fig. 27A shows a plan view of an embodiment of the present invention.

Figure 27B shows a partial cross-sectional view of a semiconductor wafer.

Fig. 28A is a plan view of an embodiment of the present invention.

Fig. 28B is a cross-sectional view of the embodiment of Fig. 28A.

Figure 28C is a plan view of the antenna frame.

Fig. 28D is a view of the overlapping state of the antenna member and the LSI wafer viewed from above.

Fig. 28E is a cross-sectional view showing the state of connecting the antenna and the semiconductor device.

Fig. 29A is a cross-sectional view illustrating an embodiment of the present invention.

Fig. 29B is a plan view of the LSI wafer.

Fig. 29C is a plan view showing the disposition state of the antenna.

Fig. 29D is a cross-sectional view showing the state where the LSI wafer and the antenna face each other.