Matrix-type display device and the manufacturing method of the same

Matrix display element and manufacturing method thereof

Technical Field

The present invention relates to a matrix display element and its manufacturing method, in particular, it is possible to selectively arrange optical materials such as fluorescent materials (luminescent materials) or light modulating materials at a predetermined position on a display substrate. The optical materials are at least The matrix type display element and its manufacturing method which are liquid at the time of application, so that the optical material is accurately arranged at a predetermined position.

Background technique

LCD (Liquid Crystal Display) or EL (Electroluminescense) display elements, such as torch matrix display elements, have been variously used, and most of them are used as display elements that achieve light weight, thinness, high image quality, and high definition. The matrix display element is composed of matrix-shaped busbar wiring, optical materials (luminescent materials or light modulating materials), and other structures required by it.

Here, in the case of a monochromatic matrix type display element, the wiring or electrodes must be arranged in a matrix on the display substrate, but the optical material can also be applied to the entire display substrate in the same way.

In this regard, for example, when the EL display element in its own light-emitting form realizes a so-called color matrix display element, in each pixel, three pixel electrodes are arranged corresponding to the three primary colors of RGB light, and at the same time, in each pixel The electrode must be coated with an optical material corresponding to any one of the RBG. That is to say, the optical material must be selectively arranged in a predetermined position.

Here, it is desired to develop a method for patterning optical materials, but effective patterning methods include etching and coating.

The process of etching is explained as follows.

First, a layer of optical material is formed on the entire surface of the display substrate. Next, a resist film is formed on the upper surface of the optical material layer, and the resist film is patterned after exposure via a mask. Then, etching is performed, and patterning of the optical material layer is performed in accordance with the pattern of the resist.

However, in this case, due to the large number of past trips, the materials and devices are expensive, which increases the cost. In addition, due to the large number of processes, each process is complicated, which also deteriorates throughput. Furthermore, due to the chemical properties of optical materials, the resistance to resist or etching solution is reduced, which also makes these processes impossible.

In addition, the process of coating is explained as follows.

First, the optical material is dissolved in a solvent to form a liquid, and the liquid optical material is selectively coated on a predetermined position on the display substrate by a black spray method or the like. Then, according to the needs, the optical material is solidified by heating or light irradiation. In this case, because the number of processes is small, and the materials and devices are low in price, the cost is reduced. In addition, since the number of processes is small and each process is simple, the production volume is also better. Furthermore, regardless of the chemical properties of the optical material, if it is liquefied, these processes are possible.

The pattern processing method of coating as described above is also considered to be easy to implement. However, the inventors of the present invention tried to conduct experiments. When the optical material was applied by inkjet method, the optical material had to be diluted more than several tens of times with a solvent. Therefore, it was judged that the fluidity was improved. It is difficult to maintain the coating position until solidification.

That is, due to the fluidity of the liquid optical material, the accuracy of the pattern processing deteriorates. For example, the optical material coated on one pixel flows out to the adjacent pixel, thereby degrading the optical characteristics of the pixel. In addition, in each pixel, the coating area is uneven, the coating thickness is uneven, and the optical properties of the optical material are uneven.

This problem is particularly noticeable when the light-emitting materials for EL display elements are in liquid form during application and then solidified. However, liquid crystals are also selectively applied during and after application. When applied on the display substrate, the same problem occurs.

The present invention focuses on the unsolved problems of the past technology, and its purpose is to provide features that can maintain low cost, high throughput, and high degree of freedom of optical materials, and to reliably arrange liquid optical materials A torch array display element in a predetermined position and its manufacturing method.

[Discovery of Invention]

In order to achieve the above-mentioned object, the first item of the scope of the patent application of the present invention is a configuration for selectively disposing an optical material at a predetermined position on a display substrate; the aforementioned optical material is liquid at least when it is applied to the aforementioned predetermined position. The matrix-shaped display element has a step in order to selectively apply the optical material at the predetermined position and the boundary portion around it.

According to the first item of the scope of application of the present invention, due to the above-mentioned level difference, the optical material is liquid at the time of coating, and the optical material can also be selectively arranged at a predetermined position. That is, the matrix display element in the first item of the scope of patent application is a high-performance matrix display element in which optical materials are correctly arranged in a predetermined position.

In order to achieve the above-mentioned object, the second item of the scope of the patent application of the present invention is for a configuration with an optical material selected at a predetermined position on a display substrate; the optical material is liquid at least when it is applied to the predetermined position. The manufacturing method of the torch matrix type display element includes a process of forming the predetermined position on the display substrate and the boundary portion around it in order to coat the level of the liquid optical material, and using the level of The process of applying the aforementioned liquid optical material.

According to the second item of the scope of application of the present invention, since the liquid optical material is coated with a step, the liquid optical material coated at a predetermined position can be prevented from spreading to the surroundings by this step. As a result, it is possible to maintain characteristics such as low cost, high throughput, and high degree of freedom of optical materials, and to improve the accuracy of pattern processing.

According to the third item of the patent application scope of the present invention, it is the manufacturing method of the matrix element in the second item of the above-mentioned patent application scope of the present invention; The surface of the liquid optical material on which the display substrate is applied faces upward, and the liquid optical material is applied to the predetermined position.

According to item 3 of the scope of the patent application of the present invention, if the surface of the optical material coated on the display substrate faces upward, the concave portion formed by the step difference also faces upward. Then, a liquid optical material is applied to the inner side of the concave portion to form the optical material in the concave portion by gravity; the liquid optical material to be coated is limited to the amount of optical material that is not extremely large, and it is formed by gravity or The surface tension and the like can be accumulated in the recesses. Therefore, in this state, for example, after drying the optical material, it is not a problem to solidify the optical material, and high-precision pattern processing can be performed.

In this regard, item 4 of the scope of the patent application of the present invention refers to the method for manufacturing the matrix display element of the second item of the patent scope of the present invention; , Make the surface of the liquid optical material coated on the display substrate face down, and apply the liquid optical material to the predetermined position.

According to item 4 of the scope of the patent application of the present invention, when the surface of the optical material coated on the display substrate faces downward, the convex part formed by the step difference also faces downward. Then, a liquid optical material is applied to the convex portion to form a surface tension to gather the optical material on the convex portion; the liquid optical material to be coated is limited to the optical material and is not extremely large. , It can accumulate on the convex part by surface tension, so in this state, for example, after drying it, it will not be a problem to solidify the optical material, and high-precision pattern processing can be performed.

In order to achieve the above-mentioned object, item 5 of the scope of the patent application of the present invention is a configuration for selectively disposing optical materials at the predetermined position on the aforementioned optical material, and the aforementioned optical material is at least applied to the aforementioned predetermined position. A method of manufacturing a liquid torch matrix display element includes a process of forming a plurality of first busbar wires on the display substrate, and the step of applying the liquid optical material to the display substrate. The process of the predetermined position and the boundary part around it, and the process of applying the liquid optical material to the predetermined position by using the aforementioned level difference, and forming a plurality of second bus-bar wirings that cross the aforementioned first bus-bar to make it The process of covering the aforementioned optical materials.

According to item 5 of the scope of the patent application of the present invention, the manufacturing method of the so-called passive matrix element can achieve the same effect as the item 2 of the above-mentioned patent application.

In order to achieve the above-mentioned object, the sixth item of the scope of the patent application of the present invention is directed to a configuration with selective arrangement of optical materials on the display substrate; the above-mentioned optical materials are liquid matrix at least when they are applied to the above-mentioned positions. A method of manufacturing a type display element; comprising a process of forming a plurality of first busbar wires on the aforementioned display substrate, and forming the step difference between the aforementioned liquid optical material and the aforementioned predetermined position on the aforementioned display substrate for coating the aforementioned liquid optical material. The process of the surrounding boundary part is the process of applying the liquid optical material to the predetermined position using the aforementioned step, and the process of forming a plurality of second busbar wirings via the peeling layer on the peeling substrate, and On the display substrate coated with the optical material, the structure peeled from the peeling layer on the peeling substrate is transferred so as to cross the first bus line and the second bus line.

According to the sixth item of the patent application scope of the present invention, it is a manufacturing method for the so-called passive matrix display element, which can achieve the same effect as the second item of the patent application scope of the present invention. 2The layer used for bus wiring, the process of etching this layer is the part that cannot be carried out, which can reduce the damage to the underlying materials such as optical materials in the subsequent process.

In order to achieve the above-mentioned purpose, the seventh item of the patent application of the present invention is directed to the arrangement of optical materials with selectivity at a predetermined position on the display substrate; the above-mentioned optical material is a liquid torch at least when it is applied to the predetermined position. A method for manufacturing a matrix display element includes forming wiring containing a plurality of scanning line signal lines on the display substrate, and pixel electrodes corresponding to the predetermined positions, and controlling the state of the pixel electrodes in accordance with the state of the wiring The process of switching elements; and the process of forming the predetermined position on the display substrate and the boundary portion around it in order to coat the level of the liquid optical material; and applying the level of the foregoing at the predetermined position The process of liquid optical materials.

According to the seventh item of the patent application scope of the present invention, it is a manufacturing method for the so-called active matrix display element, which can achieve the same effect as the second item of the above-mentioned patent application scope of the present invention.

In order to achieve the above-mentioned object, item 8 of the scope of the patent application of the present invention is for the arrangement of optical materials with selectivity at a predetermined position on the display substrate. The optical material is liquid at least when it is applied to the predetermined position. A method of manufacturing a matrix display element includes a process of forming the predetermined position on the display substrate and the boundary portion around it in order to apply the step of the liquid optical material; and interposing a peeling layer on the peeling substrate The process of forming a plurality of scanning lines and signal lines, the pixel electrode corresponding to the predetermined position, and the switching processing element for controlling the state of the pixel electrode in accordance with the state of the wiring; and applying the optical A process of transferring the structure peeled from the peeling layer on the peeling substrate to the display substrate of the material.

According to item 8 of the patent application of the present invention, it is aimed at the manufacturing method of the so-called active matrix display element, which can achieve the same effect as the second item of the patent application of the present invention. At the same time, after the optical material is arranged, wiring is formed on it. The layer used for the pixel electrode or the layer used for the pixel electrode and the process of etching these layers is the part that cannot be performed, which can reduce the damage to the underlying material of the optical material in the subsequent process, or process the scan line, signal line, pixel electrode or switch Damage to the coating of optical materials such as components.

Item 9 of the scope of the patent application of the present invention refers to the method for manufacturing the matrix display element of the fifth or sixth item of the scope of the patent application of the present invention; the foregoing paragraphs are formed by using the foregoing first bus wiring. A concave-shaped step with a predetermined position lower than its surroundings; in the process of applying the liquid optical material, the liquid optical material coated on the display substrate faces upward to form a coating at the predetermined position The aforementioned liquid optical material.

According to the 9th item of the patent application of the present invention, it is aimed at the manufacturing method of the so-called passive matrix display element; the same effect as the 3rd item of the above-mentioned patent application of the present invention can be achieved, and the first bus wiring is used to form the result of the step difference. , A part or all of the process of forming the first busbar wiring is formed as a process of forming a step, so the increase of the process can be suppressed.

Item 10 of the scope of application of the present invention relates to a method for manufacturing a matrix display element according to item 7 of the scope of patent application; In the difference section, in the process of applying the liquid optical material, the surface of the liquid optical material on which the display substrate is applied faces upward, and the liquid optical material is applied to the predetermined position.

According to item 10 of the patent application scope of the present invention, it is aimed at the manufacturing method of the so-called active matrix display element, which can achieve the same effect as the third item of the above-mentioned patent application scope of the present invention. Part or all of the process can be used as the process of forming a step, so the increase of the process can be suppressed.

The eleventh item of the patent application of the present invention is a method for manufacturing the matrix display element of the seventh item of the above-mentioned patent application of the present invention; the aforementioned step is formed using the aforementioned pixel electrode, and the aforementioned predetermined position is more In the process of applying the liquid optical material, the surface of the liquid optical material applied to the display substrate is faced downward to form a high convex level difference such that the liquid optical material is applied to the predetermined position. Material.

According to the 11th item of the patent application of the present invention, it is aimed at the manufacturing method of the so-called active matrix display device; the same effect as the 4th item of the above patent application can be achieved, and the pixel electrode is used to form the result of the step difference, and the process of forming the pixel electrode Part or all of it can be used as the process of forming a step, so the increase of the process can be suppressed.

The 12th item in the scope of the patent application of the present invention refers to the manufacturing method of the matrix type display element in the 5th to 8th items of the above-mentioned patent application scope of the present invention; it has a process of forming an interlayer insulating film; the aforementioned step difference is based on the use of the aforementioned interlayer insulating film In the process of applying the liquid optical material, the surface of the liquid optical material on which the display substrate is applied faces upwards, and is formed into The liquid optical material is applied to the predetermined position.

According to item 12 of the patent application scope of the present invention, it is aimed at the manufacturing method of the so-called passive matrix display element and the manufacturing method of the so-called active matrix display element; As a result of the step difference formed by the film, part or all of the process of forming the interlayer insulating film is also used as the step forming process, so the increase in the process can be suppressed.

The 13th item in the scope of the patent application of the present invention refers to the manufacturing method of the matrix type display element in the 5th to 8th items of the above-mentioned patent application scope of the present invention; it has a process of forming a light-shielding layer; In the process of applying the liquid optical material, the liquid optical material of the display substrate is coated with the surface of the liquid optical material facing upward to form a concave step in the predetermined position lower than its surroundings. The position is coated with the aforementioned liquid optical material.

According to item 13 of the patent application scope of the present invention, for the manufacturing method of the so-called passive matrix display element and the manufacturing method of the so-called active matrix display element, the same effect as the third item of the above-mentioned patent application of the present invention is achieved, and the light-shielding layer is used for As a result of the formation of the step, part or all of the process of forming the light-shielding layer is also used as a step of the step, so the increase in the process can be suppressed.

The 14th item in the scope of the patent application of the present invention refers to the manufacturing method of the matrix-type display element for the second, third, and fifth to the 8th item of the patent application of the present invention; the process of forming the aforementioned step is to apply liquid After the material, the step is formed due to the selective removal of the material. A resist can be applied as a liquid material. When a resist is applied, the resist is spin-coated on the entire surface of the display substrate to form a resist film of appropriate thickness and exposed. After etching the resist film, a recess is formed corresponding to a predetermined position, and a step can be formed by the recess.

According to item 14 of the patent scope of the present invention, plus the effects of items 2, 3, 5 and 8 of the above-mentioned patent scope of the present invention, it is possible to simplify the process of forming a step, and to reduce the impact on the lower layer. The destruction of the material can easily form a large step difference.

Item 15 of the scope of patent application of the present invention is a method for manufacturing matrix display elements in items 2, 3, 5, and 7 of the above-mentioned application scope; The level difference is transferred from the peeled structure of the peeling layer on the peeling substrate to the display substrate.

According to item 15 of the patent application scope of the present invention, plus the effects of items 2, 3, 5, and 7 of the above-mentioned patent application scope of the present invention, it is formed as the step difference formed by the transfer method on the peeling substrate, so it can The process of forming the level difference is simple and effective, and at the same time, it can be formed to lighten the damage of the underlying material, and it is also easy to form a large level difference of the height difference.

The 16th item in the scope of the patent application of the present invention refers to the manufacturing method of the matrix type display element for the second, third, 5-10, 12-15 items in the above-mentioned patent application scope of the present invention; Formula (1),

d_a<dr......(1)

d_aIt is the thickness of each application of the aforementioned liquid optical material.

According to item 16 of the scope of the patent application of the present invention, it does not rely on the surface tension of the liquid optical material, but can also surpass the concave step and control the flow of the optical material to the periphery of the predetermined position.

According to item 17 of the patent application scope of the present invention, the method for manufacturing the torch matrix display element of item 16 of the above-mentioned patent application scope of the present invention satisfies the following formula (2).

V_d/(d_b. r)>E_t……(2)

V_dIs the driving voltage added to the aforementioned optical material; d_bIs the sum of the coating thicknesses of the aforementioned liquid optical material; r is the concentration of the aforementioned liquid optical material; E_tIt is the electrical boundary strength (critical electrical boundary strength) at which the optical properties of the aforementioned optical material changes the least.

According to item 17 of the patent application scope of the present invention, plus the effect of item 16 of the above-mentioned patent application scope of the present invention, the relationship between the coating thickness and the driving voltage is clarified, and the electro-optical effect of the compensation optical material appears.

Item 18 of the scope of the patent application of the present invention refers to the manufacturing method of matrix display elements for items 2, 3, 5-10, and 12-15 of the above-mentioned patent application scope of the present invention; the height d of the aforementioned level difference_r, So that it satisfies the following (3) formula,

d_f=d_r……(3)

d_rIt is the finished thickness of the aforementioned optical material.

According to item 18 of the scope of the patent application of the present invention, the level difference and the flatness of the optical material at the time of completion are ensured, and the optical characteristics of the optical material can be changed uniformly, and the short circuit can be prevented.

The 19th item in the scope of the patent application of the present invention refers to the manufacturing method of the matrix-type display element according to the 18th item in the above-mentioned patent scope of the present invention;_r, So that it satisfies the following equation (4).

V_d/d_f>E_t……(4)

V_dIs the driving voltage added to the aforementioned optical material; E_tIt is the electrical boundary strength (critical electrical boundary strength) at which the optical properties of the aforementioned optical material changes the least.

According to item 19 of the patent application scope of the present invention, plus the effect of item 18 of the above-mentioned patent application scope of the present invention, the relationship between the coating thickness and the driving voltage is clarified, and the photoelectric effect of the optical material is compensated.

In order to achieve the above-mentioned object, item 20 of the scope of the patent application of the present invention is a configuration for selectively disposing an optical material on a predetermined position on a substrate, and the optical material is liquid at least when it is applied to the predetermined position. The method for manufacturing a matrix display element includes a process that relatively enhances the lyophilicity of the predetermined position on the display substrate than the lyophilicity of its surroundings, and coats the liquid optical material at the predetermined position.

According to item 20 of the scope of the patent application of the present invention, since the liquid optical material is applied to enhance the lyophilicity of the predetermined position, the liquid optical material coated on the predetermined position is formed to be larger than its surroundings. It is easy to accumulate in a predetermined position, and if the difference in lyophilicity between the predetermined position and its surroundings is greatly increased, the liquid optical material coated on the predetermined position will not spread to the surroundings. As a result, the characteristics of low cost, high throughput, and high degree of freedom of optical materials can be maintained, and the accuracy of pattern processing can be improved.

However, the lyophilicity of the predetermined position on the display substrate is relatively strengthened than the lyophilicity of its surroundings. It is considered to strengthen the lyophilicity of the predetermined position, or strengthen the liquid repellency around the predetermined position, or perform The two.

In order to achieve the above-mentioned object, item 21 of the scope of patent application of the present invention is a configuration for selectively disposing optical materials at a predetermined position on a display substrate. The above-mentioned optical materials are liquid at least when they are applied to a predetermined position. A method for manufacturing a matrix-shaped display element that includes a process of forming a plurality of first bus wires on the substrate, and the lyophilicity of the predetermined position on the display substrate is relatively enhanced than the lyophilicity of its surroundings The process, the process of applying the liquid optical material to the predetermined position, and the process of forming a plurality of second bus wirings that cross the first bus wiring to cover the optical material.

According to item 21 of the patent scope of the present invention, it is a manufacturing method for the so-called passive matrix display element; the same effect as that of item 20 of the above-mentioned patent application scope of the present invention can be achieved.

In order to achieve the above-mentioned object, item 22 of the scope of the patent application of the present invention is a configuration for selectively disposing optical materials at a predetermined position on a display substrate. The optical material is liquid at least when it is applied to the predetermined position. A method of manufacturing a matrix-shaped display element; it includes a process of forming a plurality of first bus wires on the display substrate, and the lyophilicity of the predetermined position on the display substrate is relatively strengthened than the lyophilicity of its surroundings And the process of applying the liquid optical material to the predetermined position, the process of forming a plurality of second bus wires on the peeling substrate through the peeling layer, and the process of applying the optical material On the display substrate, the structure peeled from the peeling layer on the peeling substrate is transferred so as to cross the first bus bar wiring and the second bus bar wiring.

According to item 22 of the patent application scope of the present invention, the manufacturing method of the so-called passive matrix display element can achieve the same effect as item 20 of the above-mentioned patent application scope of the present invention. For the layer used for bus wiring, the process of etching this layer is the part that cannot be performed, and it is formed to reduce the damage to the underlying materials such as optical materials in the subsequent process.

In order to achieve the above-mentioned object, item 23 of the scope of the patent application of the present invention is a configuration for selectively disposing optical materials at a predetermined position on a display substrate. The optical material is liquid when applied to at least the predetermined position. A method for manufacturing a matrix-shaped display element; comprising forming wiring containing a plurality of scanning lines and signal lines on the substrate, and pixel electrodes corresponding to the predetermined positions, and controlling the pixel electrodes in accordance with the state of the wiring The process of switching processing elements in the state of being in the above-mentioned state; and the process of enhancing the lyophilicity of the predetermined position on the display substrate relatively more than the lyophilicity of its surroundings; and applying the liquid optical material to the predetermined position Process.

According to item 23 of the patent scope of the present invention, it is aimed at the manufacturing method of the so-called active matrix display element; the same effect as that of item 20 of the above-mentioned patent application scope of the present invention can be achieved.

In order to achieve the above-mentioned object, item 24 of the scope of the patent application of the present invention is a configuration for selectively disposing optical materials at a predetermined position on a display substrate. The optical material is liquid when applied at least at the predetermined position. A method for manufacturing a matrix-shaped display element; a process for relatively enhancing the lyophilicity of the predetermined position on the display substrate than the lyophilicity of its surroundings; and coating the liquid optical material on the predetermined position The process; and on the peeling substrate via the peeling layer to form wiring containing a plurality of scanning lines and signal lines, and the pixel electrode corresponding to the predetermined position, and in order to control the pixel electrode according to the state of the wiring The process of processing the element in the state of the switch; and the process of transferring the peeled structure from the peeling layer on the peeling substrate on the display substrate coated with the optical material.

According to item 24 of the patent application scope of the present invention, the manufacturing method of the so-called active matrix display element can achieve the same effect as item 20 of the above-mentioned patent application scope of the present invention. The layer used for the pixel electrode or the layer used for the pixel electrode, and the process of etching these layers is the part that cannot be carried out, which is formed to reduce the damage to the underlying material of the optical material in the subsequent process; or to the scan line, signal line, and pixel electrode Or damage to the coating of optical materials such as switch processing elements.

The 25th item of the patent application scope of the present invention is a method for manufacturing the matrix display in the 21st or 22nd item of the above-mentioned patent application scope of the present invention. The distribution with strong liquidity is formed so that the lyophilicity of the predetermined position on the display substrate is relatively strengthened than the lyophilicity of its surroundings.

According to item 25 of the patent application scope of the present invention, it is aimed at the manufacturing method of the so-called passive matrix display element; it can achieve the same effect as item 24 of the above-mentioned patent application scope of the present invention, while wiring along the first bus bar to form a lyophilic property. As a result of the stronger distribution, part or all of the process of forming the first bus bar wiring can be suppressed by making it a process that relatively strengthens the lyophilicity of the predetermined position as compared with the lyophilicity of its surroundings. The increase in the process.

According to item 26 of the scope of the patent application of the present invention, the method for manufacturing a matrix display element within the scope of the above-mentioned patent application of the present invention; The lyophilicity of the predetermined position on the display substrate is relatively enhanced than the lyophilicity of its surroundings.

According to item 26 of the patent scope of the present invention, the manufacturing method of the so-called active display device can achieve the same effect as item 20 of the above-mentioned patent application scope of the present invention. A part or all of the wiring process can be made to increase the lyophilicity of the predetermined position relative to the lyophilicity of its surroundings, so that the increase of the process can be suppressed.

Item 27 of the patent application scope of the present invention refers to the method for manufacturing a matrix display element according to item 23 of the above-mentioned patent application scope of the present invention; as the lyophilicity of the surface of the pixel electrode on the display substrate is strengthened, it is formed to make It also strengthens the lyophilicity of the predetermined position on the display substrate relatively more than its surroundings.

According to item 27 of the patent application scope of the present invention, the manufacturing method of the so-called active matrix display element can achieve the same effect as item 20 of the above-mentioned patent scope of the present invention. Part or all of the process of the electrode is also a process that relatively strengthens the lyophilicity of the predetermined position as compared with the lyophilicity of its surroundings, so that the increase of the process can be suppressed.

The 28th item of the patent scope of the present invention is a method for manufacturing the matrix display element of the above-mentioned patent scope 21-24 of the present invention; it has a process of forming an interlayer insulation film; A distribution with strong liquid repellency is formed, so it is formed so that the lyophilicity of the predetermined position on the display substrate is relatively strengthened than the lyophilicity of its surroundings.

According to item 28 of the patent application scope of the present invention, the manufacturing method of the so-called passive matrix display element and the manufacturing method of the so-called active matrix display element can be achieved; the same effect as the 20th item of the above-mentioned patent scope of the present invention can be achieved, while insulating along the interlayer As a result of the formation of the film with a strong lyophilic distribution, part or all of the process of forming the interlayer insulating film is also a process that relatively strengthens the lyophilicity of the predetermined position as compared with the lyophilicity of its surroundings. Therefore, the increase of the process can be suppressed.

Item 29 of the patent application scope of the present invention is a method for manufacturing a matrix display element according to item 23 of the above-mentioned patent application scope of the present invention; When the interlayer insulating film is applied, the difference between the level of the liquid optical material is formed on the part where the surface of the pixel electrode is exposed and the boundary part around it, and the liquid repellency of the surface of the interlayer insulating film is strengthened. In order to make the lyophilicity of the predetermined position on the display substrate relatively stronger than the lyophilicity of its surroundings.

According to item 29 of the patent application scope of the present invention, before applying the liquid optical material, the interlayer insulating film is used to form the concave step as in the third item of the patent scope of the present invention, and at the same time, the surface of the interlayer insulating film is strengthened to repel Therefore, the lyophilicity of the specified location is relatively stronger than the lyophilicity of its surroundings. Therefore, it is formed to play both the role of item 3 of the above-mentioned patent application of the present invention and the role of item 20 of the above-mentioned patent of the present invention, so it is possible to more reliably prevent the liquid optical material from being applied to a predetermined position. Spread to the surroundings. As a result, the characteristics of low cost, high throughput, and high degree of freedom of optical materials can be maintained, and the accuracy of pattern processing can be improved.

The 30th item in the scope of the patent application of the present invention is a method for manufacturing the matrix display element in the 21st to 24th items of the above-mentioned patent application scope of the present invention; A distribution with strong liquid repellency is formed, so it is formed so that the lyophilicity of the predetermined position on the display substrate is relatively stronger than the lyophilicity of its surroundings.

According to item 30 of the patent application scope of the present invention, the manufacturing method of the so-called passive torch matrix display element and the manufacturing method of the so-called active matrix display element can achieve the same effect as the above-mentioned patent application scope item 20 of the invention. As a result of the formation of the light-shielding plate with strong lyophilicity, part or all of the process of forming the light-shielding layer is also a process that relatively strengthens the lyophilicity of the predetermined position as compared with the lyophilicity of its surroundings. Therefore, the increase of the process can be suppressed.

The 31st item in the scope of the patent application of the present invention refers to the manufacturing method of the matrix-type display element in the 20th to 30th item of the above-mentioned patent application scope of the present invention;₂, CF₃Plasma such as, Ar, etc. is thus formed to increase the difference in lyophilicity between the predetermined position and its surroundings.

According to item 31 of the patent scope of the present invention, for example, the liquid repellency of the surface of the interlayer insulating film can be easily enhanced.

The 32nd item in the scope of the patent application of the present invention refers to the manufacturing method of the matrix type display element in the 2nd-19th items of the above-mentioned patent application scope of the present invention; The lyophilicity of the specified location.

In addition, item 33 of the scope of the patent application of the present invention refers to the method for manufacturing the matrix display element of items 20-28, 31 of the scope of the patent application of the present invention; The foregoing process of displaying the foregoing predetermined position on the substrate and the surrounding boundary portion.

Then, according to item 32 or 33 of the patent scope of the present invention, similar to item 29 of the above-mentioned patent scope of the present invention, a predetermined level difference is formed before the liquid optical material is applied, and at the same time, the lyophilicity of the predetermined position is higher than that of its surroundings. The lyophilicity is relatively strengthened. Therefore, it is formed to play both the role of item 3 of the above-mentioned patent application of the present invention and the role of item 20 of the above-mentioned patent application of the present invention, so it can more reliably prevent the liquid optics being coated on a predetermined position. The material spreads around. As a result, it is formed to maintain the characteristics of low cost, high throughput, and relatively degree of freedom of optical materials, and to improve the accuracy of pattern processing.

In order to achieve the above-mentioned object, item 34 of the scope of the patent application of the present invention is a structure for selectively disposing an optical material on a predetermined position on a display substrate. The optical material is liquid at least when it is applied to the predetermined position. A method for manufacturing a matrix-shaped display element; comprising a process of forming a potential distribution on the display substrate to a potential that is different from the predetermined position and its surroundings, and using the potential distribution to combine the liquid optical material The process of selective coating at the aforementioned location.

According to item 34 of the patent application scope of the present invention, in order to form a potential distribution before applying the liquid optical material, the liquid optical material applied at a predetermined position can be prevented from spreading to the surroundings according to the potential distribution. As a result, the characteristics of low cost, high throughput, and high degree of freedom of optical materials can be maintained, and the accuracy of pattern processing can be improved.

In order to achieve the above-mentioned object, item 35 of the scope of the patent application of the present invention is a configuration for selectively disposing optical materials at a predetermined position on a display substrate. The optical material is liquid at least when it is applied to the predetermined position. A method for manufacturing a matrix-shaped display element; including a process of forming a potential distribution on the display substrate so that the predetermined position and its surroundings are different potentials, and combining the liquid optical material with the predetermined The process of applying a repulsive potential between the surroundings of the position and then applying it to the predetermined position described above.

According to item 35 of the scope of the patent application of the present invention, a repulsive force is generated between the liquid optical material to be coated and the surroundings of the predetermined position, so that the liquid optical material coated on the predetermined position can be prevented from spreading to the surroundings . As a result, the characteristics of low cost, high throughput, and high degree of freedom of the optical material can be maintained, and the accuracy of pattern processing can be improved.

In order to achieve the above-mentioned object, item 36 of the scope of the patent application of the present invention is a configuration for selectively disposing optical materials at a predetermined position on a display substrate. The optical material is liquid at least when it is applied to the predetermined position. A method of manufacturing a matrix-shaped display element; comprising a process of forming a plurality of first bus wires on the display substrate, and forming a potential distribution on the display substrate so that the predetermined position is different from the surroundings The process of electric potential, and the process of applying a repulsive potential between the liquid optical material and the periphery of the predetermined position, and then applying it to the predetermined position, and forming a wiring with the first bus bar The process of intersecting a plurality of second busbar wires to cover the aforementioned optical material.

According to item 36 of the patent application scope of the present invention, for the manufacturing method of the so-called passive matrix display element, the same effect as the 35 item of the above-mentioned patent application scope of the present invention can be achieved.

In order to achieve the above-mentioned object, item 37 of the scope of the patent application of the present invention is a configuration for selectively disposing optical materials at a predetermined position on a display substrate. The optical material is liquid at least when it is applied to the predetermined position. A method for manufacturing a matrix-shaped display element; including a process of forming a plurality of first bus wires on the display substrate, and forming a potential distribution on the display substrate so that the predetermined position is different from the surroundings The process of electric potential, and the process of applying a repulsive potential between the liquid optical material and the periphery of the predetermined position, and then applying it to the predetermined position, and peeling off the substrate for peeling Layer to form a plurality of second busbar wirings, and transfer the structure peeled from the peeling layer on the peeling substrate on the display substrate coated with the optical material to cross the first bus The process of wiring and the aforementioned second bus wiring.

According to item 37 of the patent application scope of the present invention, the manufacturing method of the so-called passive matrix display element can achieve the same effect as item 35 of the above-mentioned patent application scope of the present invention. The layer used for bus wiring and the part that cannot be etched in the process of etching this layer is formed to reduce the damage to the underlying materials such as optical materials in subsequent processes.

In order to achieve the above-mentioned object, item 38 of the scope of patent application of the present invention is a configuration for selectively disposing optical materials at a predetermined position on a display substrate. The optical material is liquid at least when it is applied to the predetermined position. A method for manufacturing a matrix-shaped display element; comprising wirings formed on the display substrate and containing a plurality of scanning lines and signal lines, and pixel electrodes corresponding to the predetermined positions, and in order to control the pixel electrodes in accordance with the wiring state And the process of forming a potential distribution on the aforementioned display substrate to form a potential that is different from the aforementioned predetermined position and its surroundings; and placing the aforementioned liquid optical material at the aforementioned predetermined position After applying the potential to generate repulsive force between the surroundings, apply it to the above-mentioned predetermined position.

According to item 38 of the patent application of the present invention, with regard to the manufacturing method of the so-called active matrix display element, the same effect as that of item 35 of the patent application of the present invention can be achieved.

In order to achieve the above-mentioned object, item 39 of the scope of the patent application of the present invention is directed to a matrix type in which an optical material is arranged at a predetermined position on a substrate, and the optical material is liquid at least when it is applied to the predetermined position. A method of manufacturing a display element; a process of forming a potential distribution on the display substrate so that the predetermined position and its surroundings are different in potential; and placing the liquid optical material in the vicinity of the predetermined position The process of applying a potential that generates repulsive force to the aforementioned predetermined position; and on the peeling substrate, via the peeling layer, a wiring containing a plurality of scanning lines and signal lines is formed, and the wiring corresponding to the aforementioned predetermined position is formed. The pixel electrode, and the process of controlling the state of the pixel electrode in accordance with the state of the wiring; and on the display substrate coated with the optical material, the transfer of the peeling layer from the peeling substrate on the peeling substrate The process of peeling off the structure.

According to item 39 of the patent scope of the present invention, the manufacturing method of the so-called active matrix display device can achieve the same effect as item 35 of the above-mentioned patent application of the present invention. Layers or layers for pixel electrodes, and the process of etching these layers is the part that cannot be carried out. It is formed to reduce the damage of the subsequent process of the underlying materials such as optical materials, or to scan lines, signal lines, pixel electrodes, or Damage to the coating of optical materials such as switch processing elements.

The 40th item in the scope of the patent application of the present invention refers to the method for manufacturing the matrix display element of the 35 to 39 items in the scope of the above-mentioned patent application of the present invention; It is formed to be charged.

According to item 40 of the patent scope of the present invention, it is formed to have a liquid optical material so that it can reliably generate repulsive force.

Item 41 of the patent application scope of the present invention refers to the manufacturing method of the matrix type display element of the 36th or 37th item of the above-mentioned patent application scope of the present invention; Its formation.

In addition, item 42 of the patent scope of the present invention refers to a method for manufacturing a matrix display element according to item 38 of the patent application scope of the present invention; the aforementioned potential distribution is formed by applying a voltage to the aforementioned wiring.

However, item 43 of the present invention patent application refers to a method for manufacturing a matrix display element according to item 38 of the above-mentioned patent application scope of the present invention; the aforementioned potential distribution is formed by applying a voltage to the aforementioned pixel electrode.

Furthermore, item 44 of the patent application of the present invention is directed to the manufacturing method of the matrix display element of item 38 of the above-mentioned patent application scope of the present invention; A potential is applied to the line, and the pixel electrode is formed after a voltage is applied to the pixel electrode through the switching processing element.

In addition, item 45 of the scope of the patent application of the present invention refers to the manufacturing method of the matrix display element in the scope of the patent application of the present invention 35 to 39; it has a process of forming a light-shielding layer; It is formed by adding voltage.

According to items 41 to 45 of the scope of the patent application of the present invention, since the potential distribution is formed by the configuration with matrix display elements, the increase of the process can be controlled.

The 46th item in the scope of the patent application of the present invention is a method for manufacturing the matrix-type display element of the above-mentioned patent application scope items 34 to 45 of the present invention; .

According to the scope of the patent application of the present invention, since the attractive force is generated between the liquid optical material and the predetermined position, and the repulsive force is generated between the liquid optical material and the surroundings of the predetermined position, it is easy to gather the optical material at the predetermined position, and it is more improved. Accuracy of pattern processing.

However, the aforementioned optical materials of the method for manufacturing a matrix display element in the scope of the above-mentioned patent application of the present invention, such as item 47, can be applied to inorganic or organic fluorescent materials. The fluorescent material (luminescent material) is more suitable for EL (Electroluminescense). Since it is a liquid optical material, it can be dissolved in an appropriate solvent as a solution.

In addition, the aforementioned optical materials of the method for manufacturing a matrix display element of the above-mentioned patent application scope of the present invention, items 2, 3, 5-10, 12-31, and 33-46, for example, as described in item 48 of the patent application scope of the present invention, can be Applicable to LCD.

The 49th item of the patent application scope of the present invention is a matrix display for items 7, 8, 10, 11, 13, 23, 24, 26, 27, 28, 38, 39, 42~44 of the above-mentioned patent scope of the present invention. The manufacturing method of the device; the aforementioned switching processing device is formed by amorphous silicon, polycrystalline silicon formed by high-temperature processing above 600°C, or polycrystalline silicon formed by low-temperature processing below 600°C.

The 49th item in the scope of the patent application of the present invention is also formed to improve the accuracy of pattern processing of optical materials. In particular, when polycrystalline silicon formed by low-temperature processing is used, the low cost and high performance formed by the use of a glass substrate can be established.

[Best form of implementing the invention]

Hereinafter, a preferred embodiment of the present invention will be described based on the drawings.

(1) The first embodiment

Figures 1 to 5 are diagrams showing the first embodiment of the present invention. In this embodiment, the matrix type display element and the manufacturing method thereof of the present invention are applied to an active matrix type display device using an EL display element. More specifically, it shows an example of applying a luminescent material as an optical material using scanning lines, signal lines, and common feed wires as wiring.

Fig. 1 is a circuit diagram showing a part of the display device 1 of this embodiment. The display device 1 has a plurality of scanning lines 131 respectively arranged on a transparent display substrate, and a plurality of signal lines 132 extending in the crossing direction for these scanning lines 131, and extending these signals side by side The plurality of lines 132 are shared by the configuration of the line 133, and at each intersection of the scan line 131 and the signal line 132, a pixel area 1A is provided.

For the signal line, it is provided with a data-side drive circuit 3 equipped with a shift register, a level shifter, a video line, and an analog switch.

In addition, the scan line 131 is provided with a scan side driving circuit 4 equipped with a shift register and a level shifter. Furthermore, in each pixel area 1A, there is provided a switching processing thin film transistor 142 through which the scanning signal is supplied to the gate electrode via the scanning line 131, and the holding medium is separated from the signal line 132 by the switching processing thin film transistor 142. The holding capacity cap of the supplied image signal, and the image signal held by the holding capacity cap is supplied to the current type thin film transistor 143 of the gate electrode, and is electrically connected to the current type thin film transistor 143 through this current type thin film transistor 143 When the wire 133 is shared, the pixel electrode 141 from which the driving current flows into the wire 133, and the light-emitting element 140 sandwiched between the pixel electrode 141 and the reflective electrode 154.

With this configuration, the switching process thin film transistor 142 is turned on after the scan line 131 is driven, and the potential of the signal line 132 is maintained at the holding capacity cap at this time, and the current type thin film is determined according to the state of the holding capacity cap. Transistor 143 is turned on. Disabled. Then, through the channel of the current-type thin film transistor 143, the current flows from the common feed wire 133 to the pixel electrode 141, and then the current flows to the reflective electrode 154 through the light-emitting element. Therefore, the light-emitting element responds to the flow of this current. The amount of electric current emits light.

Here, the planar structure of each pixel area 1A is as shown in FIG. 2 of the enlarged plan view with the reflective electrode or light-emitting element removed. The four sides of the rectangular pixel electrode 141 are formed with signal lines 132, The wires 133, the scanning lines 131, and other scanning lines (not shown) for the pixel electrodes are shared and arranged to be surrounded.

Figures 3 to 5 are cross-sectional views showing the manufacturing process of the pixel area 1A in accordance with the order, which is equivalent to the cross-section of line AA in Figure 2. Hereinafter, the manufacturing process of the pixel area 1A will be explained based on FIGS. 3 to 5.

First, as shown in Figure 3(a), for the transparent display substrate 121, TEOS (tetraethoxysilane) or oxygen is used as the raw material gas in accordance with the whiskers, and the thickness is about 2000 by the plasma CVD method. ~5000<img file="TW438992B_D0001.tif" />The lower protective film (not shown) formed by the silicon oxide film. Then, the temperature of the display substrate 121 is set at 350°C, and the surface of the lower protective film is formed with a thickness of about 300 to 700 by the plasma CVD method.<img file="TW438992B_D0001.tif" />A semiconductor film 200 formed of an amorphous silicon film. Then, the semiconductor film 200 formed of the amorphous silicon film is subjected to a crystallization process such as laser annealing or a solid phase growth method to crystallize the semiconductor film 200 into a polymeric silicon film. In the laser annealing method, for example, a linear beam with a beam length of 400mm is used with a laser laser, and its output intensity is, for example, 200mJ/cm². For the linear beam system, the part corresponding to 90% of the peak laser intensity in the short-inch direction scans the linear beam to overlap each area.

Next, as shown in Figure 3(b), the semiconductor film 200 is patterned to form an island-shaped semiconductor film 210, and its surface is formed with TEOS (tetraethoxysilane) or oxygen as raw materials by plasma CVD to form a thickness The gate insulating film 220 is formed of a silicon oxide film or a nitride film with a thickness of about 600~1500. However, the semiconductor film 210 is the channel area and source of the current type thin film transistor 143. The drain area is formed, but lies in the different cross-sectional positions, and the channel area and source of the thin film transistor 142 are also processed by switches. The semiconductor film formed in the drain region is formed. That is, in the manufacturing process shown in Figs. 3 to 5, two types of transistors 142 and 143 are manufactured at the same time, but since they are manufactured in the same order, in the following description, regarding the transistors, the system is Only the current type thin film transistor 143 is described, and the description of the switching processing thin film transistor 142 is omitted.

Next, as shown in Fig. 3(c), a conductive film made of a metal film of aluminum, tantalum, molybdenum, titanium, tungsten, etc. is formed by a sputtering method, and then patterned to form a gate electrode 143A .

In this state, a high concentration of phosphorous ions are implanted and the silicon thin film 210 is integrated with the gate electrode 143A to form a source. Drain area 143a, 143b. However, the portion where the impurity is not introduced is formed as the channel area 143c.

Next, as shown in FIG. 3(d), after forming the interlayer insulating film 230, contact holes 232 and 234 are formed, and the relay electrodes 236 and 238 are buried in these contact holes 232 and 234.

Next, as shown in FIG. 3(e), a signal line 132, a common feed line, and a scanning line (not shown in FIG. 3) are formed on the interlayer insulating film 230. At this time, the respective wirings of the signal line 132, the common feeder wire 133, and the scanning line are not trapped in the thickness necessary for the wiring, but are formed to have a considerable thickness. Specifically, each wiring is formed to a thickness of about 1 to 2 μm. Here, the relay electrode 238 and each wiring may be formed in the same process. At this time, the relay electrode 236 is formed as an ITO film described later.

Then, an interlayer insulating film 240 is formed to cover the upper surface of each wiring, a contact hole 242 is formed at a position corresponding to the relay electrode 236, an ITO film is also formed to be buried in the contact hole 242, and the ITO film is patterned , And a conductive connection to the source is formed at a predetermined position surrounded by the signal line 132, the common feed line 133, and the scan line. The pixel electrode 141 in the drain area 143a.

Here, in Fig. 3(e), the portion pinched between the signal line 132 and the common feeding wire 133 corresponds to a predetermined position where the optical material is selectively arranged. Then, between the predetermined position and its surroundings, a signal line 132 or a common wire 133 is used to form a step 111. Specifically, a concave-shaped step 111 whose predetermined position is lower than its surroundings is formed.

Next, as shown in Figure 4(a), in the state where the upper surface of the display substrate 121 is facing upwards, the inkjet head is used to eject a liquid (by the way) to form a positive hole injection layer contacting the lower part of the light-emitting element 140. The optical material (precursor) 114A dissolved in a solvent is selectively coated in a region (a predetermined position) surrounded by the material with a step 111. However, the specific content of the inkjet method is not important to the present invention, so it is omitted (for this method, for example, refer to Japanese Patent Laid-Open No. 56-13184 or Japanese Patent Laid-Open No. 2-167751).

In order to form the material of the positive hole injection layer, the polymer precursor is polystilbene, 1,1-diphenol-(4-N,N-xylamino) Benzene) cycloethane, 3 (8-hydroxyphenol) aluminum, etc.

At this time, since the liquid precursor 114A has high fluidity, it spreads in the horizontal direction. However, the step 111 is formed to surround the coated position. Therefore, if the liquid precursor 114A has a portion per 1 Secondly, the coating amount is not extremely large, and the liquid precursor 114A is prevented from spreading beyond the step 111 to the outside of the predetermined position.

Next, as shown in FIG. 4(b), the solvent of the liquid precursor 111A is evaporated by heating or light irradiation to form a positive hole injection layer 140a with a thin solid shape on the pixel electrode 141. Here, the concentration of the liquid precursor 114A only forms a thin positive injection layer 140a. At this point, when a thicker positive injection layer 140a is required, the process of Figure 4(a) and Figure 4(b) is repeated for the necessary number of times. As shown in Figure 4(c), a positive hole of sufficient thickness is formed Injection layer 140A.

Next, as shown in Fig. 5(a), in the state where the upper surface of the display substrate 121 is facing upwards, the inkjet head is used to discharge a liquid (dissolved) in order to form an organic semiconductor film contacting the upper part of the light-emitting element 140. The optical material (organic fluorescent material) 114B in the solution of the solvent is selectively coated in the area (predetermined position) surrounded by the material by the step 111.

Examples of organic fluorescent materials include hydrogen-based polystilbene; polystilbene, polyalkyl polydiphenyl; 2,3,6,7-tetrahydro-11-carbonyl-1H, 5H, 11H, ( 1) Benzopyran [6,7,8-ij]-Nori-10-carvone acid; 1,1-diphenolyl-(4-N,N-xylaminobenzene) ring Ethane; 2-13', 4'-dihydroxyphenylene; 3 (8-hydroxyphenol) aluminum; 2,3,6,7 polytetrahydro-9-methyl-11-hydroxy-1H, 5H, 11H(1) benzopyran [6,7,8-ij]-Nori ; Aloma Dix diamine inductor (TDP; oxadiazole inductor (PBD); cystamine Propyne-based inductors (DSA); linphenol metal complexes; beryllium-benzophenol complexes (Bebq); triphenylamine inductors (MTDATA); stilbene (inductors); azoles Tamaya lead complex; rubrene; ketone; triazacene inductor; polydiphenyl; polyalkylfluorene, polyalkylphene; azomethine lead complex; poly Sub-lead complexes; benzoxazolone sub-lead complexes; phenanthrene europium complexes, etc.

At this time, the liquid organic fluorescent material 114B still spreads in the horizontal direction due to its high fluidity, but the step 111 is formed to surround the coated position, so if the liquid precursor 114B If the application amount per time is not extremely large, the liquid precursor 114B is prevented from exceeding the step 111 and spreading to the outside of the predetermined position.

Next, as shown in FIG. 5(b), the solvent of the organic fluorescent material 114B is evaporated by heating or light irradiation to form a thin solid organic semiconductor film 140b on the positive hole injection layer 140A. Here, the concentration of the liquid organic fluorescent material 114B also forms only the thin organic semiconductor film 140b. At this point, when a thicker organic semiconductor film 140b is required, repeat the procedures in Figures 5(a) and 5(b) for the necessary number of times. As shown in Figure 5(c), an organic semiconductor of sufficient thickness is formedmembrane140B. The positive hole injection layer 140A and the organic semiconductor film 140B constitute the light emitting element 140. Finally, as shown in FIG. 5(d), the reflective electrodes 154 are formed in stripes on the entire surface of the display substrate 121.

In this way, in this embodiment, the wiring of the signal line 132, the common wiring 133, etc. is formed so as to surround the processing position where the luminescent material 140 is arranged from four sides, and at the same time, these wirings are formed thicker than usual to form a step 111. Then, Since the liquid precursor 114A or the liquid organic fluorescent material 114B is selectively coated, the light-emitting element 140 has the advantage of high pattern processing accuracy.

However, if the step 111 is formed, the reflective electrode 154 is formed on a surface with relatively large unevenness. However, if the thickness of the reflective electrode 154 is increased to a certain extent, the possibility of defects such as disconnection is extremely reduced.

In addition, since the step 111 is formed by wiring such as the signal line 132 or the common wiring 133, there is no need to add a new process in particular, and therefore, it does not cause significant complication of the manufacturing process.

However, the liquid precursor 114A or the liquid organic fluorescent material 114B is preferably used in the liquid precursor 114A or the liquid organic fluorescent material 114B in order to more reliably prevent the flow from the inside to the outside of the step 111. The coating thickness d_aThe height d from the level difference 111_rBetween, make it establish the following relationship.

d_a&lt;d_r……(1)

However, when the liquid organic fluorescent material 11B is applied, since the positive hole injection layer 140A is already formed, the height d of the step 111 is_r, Is set to be the part where the positive hole injection layer 140A must be subtracted from the original height.

In addition, the above formula (1) is satisfied, and at the same time, the driving voltage V is added to the organic semiconductor film 140B_d, And the sum d of the coating thicknesses of the liquid organic fluorescent material 114B_b, And the concentration r of the liquid organic fluorescent material 114B, and the minimum electrical boundary strength (critical electrical boundary strength) E at which the optical characteristic change occurs in the organic semiconductor film 140B_tIf the relationship of the following formula is established,

V_d/(d_b. r)&gt;E_t……(2)

The relationship between the coating thickness and the driving voltage is determined, and the electro-optical effect of the organic semiconductor film 140B is compensated.

On the other hand, the level difference 111 and the flatness of the light-emitting element 140 can be ensured. In order to make the optical characteristics of the organic semiconductor film 140B uniform and prevent short circuits, the thickness d when the light-emitting element 140 is completed is_f, And the height of the level difference 111, if the relationship of the following formula is established.

d_f=d_r……(3)

Furthermore, if the above formula (3) is satisfied, and the following formula (4) is satisfied at the same time, the relationship between the thickness of the light-emitting element 140 at completion and the driving voltage is determined, and the electro-optical effect of the organic fluorescent material is compensated.

V_d/d_f&gt;E_t……(4)

However, in this case, d_f, Not the entire light-emitting element 140 but the thickness of the organic semiconductor film 140B when it is completed.

However, the optical material forming the upper layer of the light-emitting element 140 is not limited to organic fluorescent materials, and inorganic fluorescent materials may also be used.

In addition, the transistors 142 and 143 as switching processing elements are desirably formed of polycrystalline silicon formed by low-temperature processing of 600°C or less. For this reason, the use of glass substrates reduces costs and provides high mobility and high performance. Both can be formed. However, the switching processing element may be formed of amorphous silicon or polycrystalline silicon formed by high-temperature processing at a temperature above 600°C.

However, in addition to the switching processing thin film transistor 142 and the circulating thin film transistor 143, other types of transistors may be provided, or a form driven by a single transistor may also be provided.

In addition, the level 111 may be formed by the first bus wiring of the passive matrix display element, the scan line 131 of the active matrix display element, and the light shielding layer.

However, as the light-emitting element 140, the positive hole injection layer 140A with slightly lowered luminous efficiency (positive hole injection rate) may be omitted. In addition, instead of the positive hole injection layer 140A, an electron injection layer may be formed between the organic semiconductor film 140B and the reflective electrode 154, or both the positive hole injection layer and the electron injection layer may be formed.

In addition, in the above-mentioned embodiment, particularly for color display, the case where the entire phosphor elements 140 are selectively arranged is described. For example, in the case of the display device 1 for monochrome display, as shown in FIG. 6, the organic semiconductor film 140B It can also be formed on the entire surface of the display substrate 121 in the same manner. However, in this case, in order to prevent crosstalk, the positive hole injection layer 140A must be selectively arranged at each predetermined position, so the coating using the step 111 is extremely effective.

(2) The second embodiment

FIG. 7 is a diagram showing the second embodiment of the present invention. This embodiment is to apply the matrix type display element and the manufacturing method thereof of the present invention to a passive matrix type display device using an EL display element. However, Fig. 7(a) shows the arrangement relationship between a plurality of first bus bar wires 300 and a plurality of second bus bar wires 310 arranged in a direction orthogonal to the first bus bar wires 310. Plan view; Figure 7(b) is a cross-sectional view along line BB as in (a). However, in the same configuration as that of the first embodiment described above, the same figure numbers are appended, and the repeated description is omitted. Since the detailed manufacturing process and the like are also the same as in the first embodiment described above, the illustration and description thereof are omitted.

This is the present embodiment, for example, SiO₂The insulating film 320 of the same size surrounds the predetermined position where the light-emitting element 140 is arranged. For this reason, a step 111 is formed between the predetermined position and its surroundings.

With this configuration, as in the first embodiment described above, when the liquid precursor 114A or the liquid organic fluorescent material 114B is selectively applied, it is possible to prevent these from flowing out to the surroundings, making it possible to achieve high precision. The advantages of pattern processing.

(3) The third embodiment

Figure 8 is a diagram showing the third embodiment of the present invention. This embodiment is also the same as the above-mentioned first embodiment. The matrix type display device and the manufacturing method of the present invention are applied to an active matrix type using EL display elements. Display device. More specifically, since the pixel electrode 141 is used to form the step 111, it is possible to perform high-precision pattern processing. However, for the same configuration as the above-mentioned embodiment, the same drawing number is attached. In addition, FIG. 8 is a cross-sectional view showing the middle of the manufacturing process, and the front and back are the same as those of the first embodiment, so the illustration and description are omitted.

That is, in this embodiment, the pixel electrode 141 is formed thicker than usual, and for this reason, a step 111 is formed between it and its surroundings. That is, in this embodiment, the pixel electrode 141 to which the optical material is applied later is formed to have a convex step that is higher than its surroundings.

Then, in the same manner as in the first embodiment described above, a liquid (solution dissolved in a solvent) optical material (precursor) 114A for forming a positive hole injection layer contacting the lower layer portion of the light-emitting element 140 is discharged by the inkjet head method. , Coated on the pixel electrode 141.

However, unlike the case of the above-mentioned first embodiment, the liquid coating is applied in a state where the display substrate 121 is upside down, that is, in a state where the pixel electrode 141 of the liquid precursor 114A is applied downward. Precursor 114A.

Therefore, the liquid precursor 114A is assembled on the pixel electrode 141 by gravity and surface tension, and will not spread to the surroundings. Therefore, if it is cured by heating or light irradiation, a thin positive hole injection layer similar to that shown in Figure 4(b) can be formed, and if this method is repeated, a positive hole injection layer can be formed. In the same way, an organic semiconductor film is also formed.

In this way, in this embodiment, after the liquid optical material is applied by using the convex step 111, the pattern processing accuracy of the light-emitting element can be improved.

However, it is also possible to adjust the amount of liquid optical material accumulated on the pixel electrode 141 by using inertial force such as centrifugal force.

(4) Fourth embodiment

Figure 9 is a diagram showing the fourth embodiment of the present invention. This embodiment is also the same as the first embodiment described above. The matrix type display element of the present invention and its manufacturing method are applied to an active matrix type using an EL display element. The display device. However, for the same configuration as the above-mentioned embodiment, the same drawing number is attached. In addition, FIG. 9 is a cross-sectional view showing the middle of the manufacturing process, and since the front and back are almost the same as those of the first embodiment, the illustration and description thereof are omitted.

That is, in the present embodiment, firstly, the reflective electrode 154 is formed on the display substrate 121, and secondly, the insulating film 320 is formed on the reflective electrode 154 so as to surround a predetermined position where the light-emitting element 140 is arranged later. For this reason, A concave-shaped step 111 with a predetermined position lower than its surroundings is formed.

Then, in the same manner as in the first embodiment described above, in the area surrounded by the step 111, the optical element 140 is formed by selectively applying a liquid optical material by an inkjet method.

In addition, on the peeling substrate 122, the scanning line 131, the signal line 132, the pixel electrode 141, the switching thin film transistor 142, the current type thin film transistor 143, and the insulating film 240 are formed through the peeling layer 152.

Finally, on the display substrate 121, the structure peeled from the peeling layer 122 on the peeling substrate 122 is transferred.

In this way, in this embodiment, the level difference 111 is also used to coat the optical material, so high-precision pattern processing can be performed.

Furthermore, in the present embodiment, it is formed so as to reduce the damage to the underlying materials such as the light-emitting element 140 in the subsequent process, or to the scanning line 131, the signal line 132, the pixel electrode 141, the switching thin film transistor 142, the current type The thin film transistor 143 or the insulating film 240 coated with optical material is damaged.

In this embodiment, the active matrix type display device has been described, but the passive matrix type display device may also be used.

(5) Fifth embodiment

Figure 10 is a diagram showing the sixth embodiment of the present invention. This embodiment is also the same as the above-mentioned first embodiment. The matrix type display element of the present invention and the manufacturing method thereof are applied to an active matrix type using an EL display element. The display device. However, for the same configuration as the above-mentioned embodiment, the same drawing number is attached. In addition, FIG. 10 is a cross-sectional view showing the middle of the manufacturing process. Since the front and back are almost the same as those of the first embodiment described above, the illustration and description thereof are omitted.

That is, in this embodiment, the recessed step 111 is formed by the interlayer insulating film 240. For this reason, the same effect as the above-mentioned first embodiment is obtained.

In addition, since the interlayer insulating film 240 is used to form the step 111, there is no need to add a new process, and therefore, the manufacturing process is not greatly complicated.

(6) The sixth embodiment

Figure 11 is a diagram showing the sixth embodiment of the present invention. This embodiment is also the same as the above-mentioned first embodiment. The matrix type display element of the present invention and its manufacturing method are applied to an active matrix using EL display elements. Type of display device. However, for the same configuration as the above-mentioned embodiment, the same drawing number is attached. In addition, FIG. 11 is a cross-sectional view showing the middle of the manufacturing process. Since the front and back are the same as those of the first embodiment, the illustration and description are omitted.

That is, in this embodiment, the level difference is not used to improve the accuracy of the pattern processing. Because the hydrophilicity of the predetermined position where the liquid optical material is applied is relatively stronger than the hydrophilicity of the surrounding, the applied liquid optical material is relatively more hydrophilic. The liquid optical material will not diffuse to the surroundings.

Specifically, as shown in FIG. 11, after the interlayer insulating film 240 is formed, an amorphous silicon layer 155 is formed thereon. Since the amorphous silicon layer 155 has relatively stronger water repellency than ITO forming the pixel electrode 141, the hydrophilicity of the surface of the pixel electrode 141 here is relatively stronger than the hydrophilicity of its surroundings, resulting in water repellency. Distribution of hydrophilicity.

However, as in the above-mentioned first embodiment, since a liquid optical material is selectively applied to the upper surface of the pixel electrode 141 by an inkjet method, the light-emitting element 140 is formed, and finally the reflective electrode is formed.

In this way, this embodiment is also due to the water repellency required to form it. After the lyophilicity is distributed, a liquid optical material is applied, so that the accuracy of pattern processing can be improved.

However, in the case of this embodiment, it is of course applicable to passive matrix display elements.

In addition, it includes a structure to be formed on the peeling substrate 121 via the peeling layer 152, and it may be transferred to the display substrate 121.

Furthermore, in this embodiment, an amorphous silicon layer 155 is used to form the necessary water repellency. The distribution of hydrophilicity, but water repellency. The distribution of hydrophilicity can be formed by metal, or anodic oxide film, polyimide; or insulating film such as silicon oxide, or other materials. However, if it is a passive matrix type display element, or if it is an active matrix type display element, it may be formed by the scan line 131, the signal line 132, the pixel electrode 141, the insulating film 240 or the light shielding layer.

In addition, in the present embodiment, it has been explained on the premise that a liquid optical material is an aqueous solution, but a liquid optical material of another liquid solution may be used. In this case, if the solution is made to get liquid repellency. Lyophilicity is fine.

(7) Seventh embodiment

In the seventh embodiment of the present invention, since the cross-sectional structure is the same as that of Fig. 10 used in the above-mentioned fifth embodiment, this embodiment will be used for description.

That is, in this embodiment, using SiO₂The interlayer insulating film 240 is formed, and the surface of the interlayer insulating film 240 is irradiated with ultraviolet rays, after which the surface of the pixel electrode 141 is exposed, and then a liquid optical material is selectively applied.

In such a manufacturing process, not only the step 111 is formed, but also a distribution with strong liquid repellency is formed along the surface of the interlayer insulating film 240. Therefore, the coated liquid optical material is formed due to the step 111 and the interlayer Both the liquid repellency of the insulating film 240 can be easily assembled at a predetermined position. In other words, the functions of the above-mentioned fifth embodiment and the above-mentioned sixth embodiment are both exerted, so that the pattern processing accuracy of the light-emitting element 140 can be further improved.

However, the time for irradiating the ultraviolet rays may be any time before or after exposing the surface of the pixel electrode 141, and the time is appropriately selected according to the material for forming the interlayer insulating film 240 or the material for forming the pixel electrode 141. If ultraviolet rays are irradiated before exposing the surface of the pixel electrode 141, the inner wall surface of the step 111 cannot enhance the liquid repellency, so it is helpful for the liquid optical material to be accumulated in the area surrounded by the step 111. Contrary to this, when irradiating ultraviolet rays after exposing the surface of the pixel electrode 141, the ultraviolet rays must be irradiated perpendicularly to enhance the liquid repellency of the inner wall surface of the step 111. However, because the surface of the pixel electrode 141 is exposed After the etching process is irradiated with ultraviolet rays, it has the advantage of not reducing the fear of liquid repellency due to the etching process.

In addition, as the material for forming the interlayer insulating film 240, for example, photoresist can be used, or polyimide can also be used. If this material is used, it has the advantage that the film can be formed by spin coating.

However, the material used to form the interlayer insulating film 240 is not irradiated with ultraviolet rays, such as O₂, CF₃, Ar and other plasma to enhance the liquid repellency.

(8) Eighth embodiment

Figure 12 shows the eighth embodiment of the present invention. This embodiment is the same as the above-mentioned first embodiment. The matrix type display element of the present invention and its manufacturing method are applied to an active matrix type display using an EL display element. Device. However, in the same configuration as the above-mentioned embodiment, the same drawing numbers are appended. In addition, FIG. 12 is a cross-sectional view showing the middle of manufacturing, and since the front and back are almost the same as those of the first embodiment, the illustration and description are omitted.

That is, in this embodiment, the level difference or liquid repellency is not used. The distribution of lyophilicity improves the precision of pattern processing, but the attraction or repulsion of potential is used to improve the precision of pattern processing.

That is, as shown in Fig. 12, the driving signal line 132 or the common wire 133 is connected properly. A switching transistor (not shown) is formed so that the pixel electrode 141 has a negative potential, and the interlayer insulating film 240 has a potential distribution of positive potential. Then, the positively charged liquid optical material 114 is selectively applied to the predetermined position by ink-jet method.

In this way, in this embodiment, the required potential is formed on the display substrate 121, and the liquid optical material 114 is selectively coated by the attractive and repulsive force between the potential distribution and the positively charged liquid optical material 114. Optical materials, so it can improve the accuracy of pattern processing.

In particular, in this embodiment, since the liquid optical material 114 is charged, not only the spontaneous polarization is used, but also the charged charge is used, so that the effect of improving the accuracy of pattern processing is further improved.

In this embodiment, it is shown that it is applicable to active matrix type display elements, but passive matrix type display elements can also be applied.

However, it includes a structure to be formed on the peeling substrate 121 via the peeling layer 152, and the process of transferring to the display substrate 121 may also be used.

In addition, in the wooden embodiment, the required potential distribution is that the potential is added to the scan line 131 in accordance with the order, and the potential is added to the signal line 132 and the common line 133 at the same time, and the thin film transistor 142 and the current type thin film are processed through the switch. The transistor 143 is formed by applying a potential to the pixel electrode 141. Since the scan line 131, the signal line 132, the common line 133, and the pixel electrode 141 form a potential distribution, the increase in the process can be suppressed. However, in the case of a passive matrix display element, the potential distribution can be formed by the first bus line and the light shielding layer.

Furthermore, in this embodiment, the potential is applied to both the pixel electrode 141 and the surrounding interlayer insulating film 240, but it is not limited to this. For example, as shown in FIG. 13, the potential is not applied to the pixel electrode 141 but only The interlayer insulating film 240 may be applied with a positive potential, and then the liquid optical material 114 may be positively charged and then coated. In this way, after being coated, the liquid optical material 114 can surely maintain a positively charged state. Therefore, the repulsive force between the liquid optical material 114 and the surrounding interlayer insulating film 240 can be formed to more reliably prevent The liquid optical material 114 flows out to the surroundings.

However, it is different from what has been described in each of the above embodiments. For example, the step 111 may be formed by coating a liquid material, or the material may be formed on a peeling substrate via a peeling layer and transferred to the display substrate. The structure to be peeled off from the peeling layer on the peeling substrate is printed, and the step 111 may be formed.

In addition, in each of the above embodiments, it has been described that organic or inorganic EL can be used as an optical material, but it is not limited to this, and the optical material may be liquid crystal.

Possibility of industrial use

As explained above, according to the present invention, due to the use of the step difference, or the required liquid repellency. The lyophilic distribution or the required potential distribution is coated with a liquid optical material, so it has the effect of improving the accuracy of pattern processing of the optical material.

The first figure is a circuit diagram showing a part of the display device according to the first embodiment of the present invention.

The second figure is an enlarged plan view showing the planar structure of the pixel area.

Figures 3 to 5 are cross-sectional views showing the flow of the manufacturing process of the first embodiment.

The sixth figure is a cross-sectional view showing a modification of the first embodiment.

The seventh figure is a plan view and a cross-sectional view showing the second embodiment.

The eighth figure is a cross-sectional view showing a part of the production process of the third embodiment.

The ninth figure is a cross-sectional view showing a part of the manufacturing process of the fourth embodiment.

The tenth figure is a cross-sectional view showing a part of the production process of the fifth embodiment.

The eleventh figure is a cross-sectional view showing a part of the production process of the sixth embodiment.

The twelfth figure is a cross-sectional view showing a part of the production process of the eighth embodiment.

Figure 13 is a cross-sectional view showing a modification of the eighth embodiment.